The invention discloses a preparation device for gallium nitride thin film, specifically relates to the technical field of gallium nitride thin film preparation, comprising a preparation chamber and an evaporation chamber, the evaporation chamber is fixedly connected to the bottom end inside the preparation chamber, and the evaporation chamber A quartz crucible is fixedly connected inside, and a heating wire is fixedly connected inside the quartz crucible, an ionization chamber is fixedly connected to the top of the evaporation chamber, and an insulating structure is arranged on the outer wall of the preparation chamber. The present invention is provided with a cavity, a shell, a connecting rod, a nut, a through hole and thermal insulation rock wool. When in use, the nut and the through hole are used to fix the shell on the outside of the preparation bin. At this time, a gap is formed between the preparation bin and the shell. Cavity, and then fill the cavity with thermal insulation rock wool, using the thermal insulation performance of thermal insulation rock wool, this can avoid the rapid loss of heat inside the preparation chamber, so that the internal temperature of the preparation chamber can be kept stable, and the preparation of GaN thin films can be improved. the quality of.