The present invention relates to the field of a semiconductor device and provides a longitudinal short-opening grid channel-type HEMT device and a preparation method thereof. The HEMT device comprises a substrate, a buffer layer, a first GaN layer, a second GaN layer, a second barrier layer, a first barrier layer, a dielectric layer, a source electrode, a drain electrode and a grid electrode, wherein the buffer layer is positioned on the substrate; the first GaN layer is positioned on the buffer layer; one side, whic is deviated from the buffer layer, of the first GaN layer is provided with a groove; the second GaN layer and the second barrier layer are sequentially embedded into the groove; the first barrier layer is positioned on the first GaN layer except for the groove; the dielectric layer is positioned on the first barrier layer and the second barrier layer; the source electrode and the drain electrode are in contact with the first GaN layer and the lateral surfaces of the source electrode and the drain electrode are sequentially in contact with the first barrier layer and the dielectric layer from bottom to top; and the grid electrode is in contact with the dielectric layer. According to the present invention, a normally-closed type operation mode of the HEMT device can be obtained; when a large threshold value voltage is realized, on resistance of the device is effectively reduced; and the grid electrode structure also has the characteristics of small capacitor, high switching speed of the device and the like.