A dual-mode ellipse response filter of substrate integration waveguide
A substrate-integrated waveguide and filter technology, applied to waveguide devices, connecting devices, electrical components, etc., can solve the problems of complex design and difficult implementation, and achieve the effects of simple design, convenient grounding and isolation, and high precision
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- Publication Date
- 2008-07-09
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a millimeter wave filter, which is realized by using a substrate integrated waveguide (Substrate Integrated Waveguide SIW) dual-mode cavity, has the characteristics of an elliptical response, and is especially suitable for high frequency, low loss, high integration, and for Applications with higher selectivity requirements. Background technique
[0002] The filter is one of the important basic unit circuits of the circuit system, and its performance has an important impact on the overall selectivity, noise figure, gain, and sensitivity of the system. Commonly used in microwave and millimeter wave circuits are filters based on metal waveguides and filters based on planar circuits such as microstrip lines and coplanar lines. Filters based on metal waveguides usually have the advantages of high Q value, low loss, and good selectivity, but they require high processing precision, high cost, large volume, and are difficult to integr...
Examples
Embodiment Construction
[0021] The dual-mode cavity elliptic response filter uses two dual-mode single cavities with different sizes to obtain an elliptic response with bilateral steep drops, and each single cavity contributes one zero point and two poles. The structure of the single cavity is shown in Figure 1. It adopts the substrate integrated waveguide technology, including the dielectric substrate 1, the upper surface metal layer 7 and the lower surface metal layer 8 coated on the upper and lower surfaces of the dielectric substrate 1, and the The metallized through-hole array 2 of the upper surface metal layer 7 and the lower surface metal layer 8 of the upper and lower metal surfaces. The cavity 3 with a rectangular structure is a standard rectangular structure, and the first inductive coupling hole 61 and the second inductive coupling hole 62 lead energy into and out of the cavity. The first metallized through-hole array 4 and the second metallized through-hole array 5 correspond to the input...