Display device

Abstract

A display device is disclosed, which includes: a pixel electrode, the pixel electrode including a first sub-pixel electrode and a second sub-pixel electrode, the first sub-pixel electrode and the second sub-pixel electrode being arranged to be spaced apart from each other in at least one sub-pixel among a plurality of sub-pixels on a substrate; a driving transistor, the driving transistor driving at least one sub-pixel; and a connecting electrode structure, the connecting electrode structure electrically connecting at least one sub-pixel electrode of the first sub-pixel electrode and the second sub-pixel electrode of the pixel electrode to the driving transistor.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the benefit of Korean Patent Application No. 10-2019-0144371, filed on November 12, 2019, which is hereby incorporated by reference as if fully set forth herein. Technical Field

[0003] The present disclosure relates to a display device. Background Art

[0004] Recently, with the progress of the information age, the display field for visually displaying electrical information signals has developed rapidly. In response to this trend, various display devices with excellent performances of thin profile, light weight and low power consumption have been developed. Detailed examples of display devices include liquid crystal display (LCD) devices, quantum dot display devices, field emission display devices and organic light emitting display devices.

[0005] Among display devices, organic light emitting display devices that do not require a separate light source are considered as competitive applications for compact devices and clear color display.

[0006] Recently, as automobile glass or windows or transparent plates for product display or advertisement as well as standardized televisions or cellular phones and displays are given display functions, demands for display devices using complex functions such as transparent display devices have increased.

[0007] In a circuit of a display device, a manufacturing process of a thin film transistor, or a manufacturing process of an organic light emitting diode, characteristic degradation or an internal short circuit failure of a thin film transistor may occur.

[0008] If the thin film transistor is not driven normally, a pixel or sub-pixel becomes a dark spot because current or voltage is not applied to the organic light emitting diode connected to the thin film transistor. Alternatively, if the source electrode and the drain electrode of the driving thin film transistor are short-circuited, the driving thin film transistor cannot be driven normally, and the voltage applied to the source electrode is directly applied to the drain electrode without turning on / off, whereby the sub-pixel is always kept in the on state, and thus a bright spot appears.

[0009] Because bright spots are easily visible to the user's eyes due to good visibility, bright spots deteriorate display quality. For this reason, even if only one bright spot appears on the display area, the display device is considered to have a defect, thereby causing a problem that the display device cannot be manufactured as a final product. In particular, since dark spots or bright spots in a transparent display device or a top-emission type large-size display device may be visible to the user's eyes, a solution that can avoid or minimize dark spots or bright spots is required. Summary of the invention

[0010] The present disclosure is made in view of the above problems, and the purpose of the present disclosure is to provide a display device including a repair line and a connection electrode structure for each sub-pixel for normally driving the display device, so as to minimize product defects based on dark spots or bright spots and improve the process yield. In particular, the connection electrode structure arranged for each sub-pixel can normally drive the sub-pixel with dark spots or bright spots, and can minimize the damage to the sub-pixel that may be caused by the laser and the reliability degradation.

[0011] In addition to the objects of the present disclosure as mentioned above, other objects and features of the present disclosure will be clearly understood by those skilled in the art from the following description of the present disclosure.

[0012] According to one aspect of the present disclosure, the above objectives and other objectives can be achieved by providing a display device, which includes: a pixel electrode, the pixel electrode including a first sub-pixel electrode and a second sub-pixel electrode, the first sub-pixel electrode and the second sub-pixel electrode being arranged to be spaced apart from each other in at least one sub-pixel among a plurality of sub-pixels on a substrate; a driving transistor, the driving transistor driving at least one sub-pixel; and a connecting electrode structure, which electrically connects at least one sub-pixel electrode of the first sub-pixel electrode and the second sub-pixel electrode of the pixel electrode to the driving transistor.

[0013] According to one aspect of the present disclosure, the above objectives and other objectives can be achieved by providing a display device, which includes: a transmission area that transmits external light of a substrate; a first sub-pixel electrode, which is arranged in at least one sub-pixel among a plurality of sub-pixels arranged adjacent to the transmission area; a second sub-pixel electrode, which is arranged to be spaced apart from the first sub-pixel electrode within at least one sub-pixel; a driving transistor that drives at least one sub-pixel; and a connecting electrode structure that electrically connects at least one sub-pixel electrode of the first sub-pixel electrode and the second sub-pixel electrode to the driving transistor.

[0014] According to one aspect of the present disclosure, the above objectives and other objectives can be achieved by providing a display device, which includes: a pixel electrode, the pixel electrode including a first sub-pixel electrode and a second sub-pixel electrode, the first sub-pixel electrode and the second sub-pixel electrode being arranged to be spaced apart from each other in at least one sub-pixel among a plurality of sub-pixels on a substrate; a driving transistor, the driving transistor driving at least one sub-pixel; and a connecting electrode structure, the connecting electrode structure electrically connecting at least one sub-pixel electrode among the first sub-pixel electrode and the second sub-pixel electrode to the driving transistor, wherein a repair line is arranged between adjacent sub-pixels among the plurality of sub-pixels along a direction passing through the at least one sub-pixel, and the repair line partially overlaps with the pixel electrode.

[0015] The connecting electrode structure may include: a first connecting electrode, which extends from the first end of the first sub-pixel electrode to the first direction, wherein the first direction is a direction perpendicular to the direction from the first sub-pixel electrode to the second sub-pixel electrode; a second connecting electrode, which extends from the first end of the second sub-pixel electrode to the first direction; a third connecting electrode, which is electrically connected to the driving transistor and extends to the first direction; and a fourth connecting electrode, which has a first end in contact with the first connecting electrode and a second end in contact with the second connecting electrode, the fourth connecting electrode contacts the third connecting electrode between the first end and the second end, and is arranged in a layer different from and in contact with at least one connecting electrode from the first to third connecting electrodes.

[0016] At least one of the first subpixel electrode and the second subpixel electrode may be partially disposed on the driving transistor, and the fourth connection electrode may be disposed on the same layer as an active layer constituting the driving transistor.

[0017] The fourth connection electrode is arranged in a second direction different from or orthogonal to the first direction, and the fourth connection electrode may connect the first connection electrode with the third connection electrode through a bridge, or connect the second connection electrode with the third connection electrode through a bridge.

[0018] The present disclosure may include a connection electrode structure for each sub-pixel to repair sub-pixels with dark spots or bright spots, thereby improving the process yield and quality of the display device.

[0019] Since the connection electrode structure includes a layer used for a backplane process, an additional process for forming the connection electrode structure is not required, thereby improving productivity of the display device.

[0020] If the conductive active layer is used as a connection electrode for laser cutting of the connection electrode structure, the wavelength range of the laser required for the repair process is lower than the wavelength range of the laser applied to general metal, so that the peripheral structure or other layers may be affected by the connection electrode to a minimum extent.

[0021] In addition, if the conductive active layer is used as the connection electrode for laser cutting of the connection electrode structure, the wet etching process can be eliminated, thereby preventing the film uniformity from being degraded due to the wet etching process and obtaining a process margin. In addition, since the conductive active layer can be arranged by the same process as that of the thin film transistor, the process of setting the connection electrode structure is simple.

[0022] Since the connection electrode structure connects the connection electrodes arranged on different layers to each other, a thick electrode structure is not applied to the connection electrodes for laser cutting, thereby preventing the increase of laser cutting energy and reducing the occurrence of damage to the organic light emitting diode with weak laser.

[0023] In the present disclosure, even if the repair process is performed by laser, since the connection electrode used for laser cutting in the connection electrode structure is a conductive active layer or is not thick, the encapsulation layer can be prevented from being damaged by the laser, thereby preventing the reliability of the product from being deteriorated.

[0024] In addition to the effects of the present disclosure as mentioned above, other objects and features of the present disclosure will be clearly understood by those skilled in the art from the following description of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The above and other objects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0026] Figure 1 is a perspective view briefly showing a display device according to the present disclosure;

[0027] Figure 2 It shows that according to Figure 1 A diagram of an example of a unit of a display device;

[0028] Figure 3A and Figure 3B It shows that according to Figure 1 A diagram of another example of a unit of a display device;

[0029] Figure 4 It is shown Figure 1 A diagram of sub-pixels of the cell shown;

[0030] Figure 5 It is shown Figure 4 An enlarged view of the connecting electrode structure;

[0031] Figure 6 yes Figure 5 A cross-sectional view of the connecting electrode structure taken along line AA';

[0032] Figure 7 yes Figure 4 A circuit scheme for a sub-pixel;

[0033] Figure 8 It is shown Figure 6 FIG. 10 shows a portion of a connecting electrode structure subjected to laser cutting;

[0034] Figures 9 to 11 is a diagram showing that the present disclosure includes a connection electrode structure subjected to laser cutting;

[0035] Fig.12 is a diagram showing a display device according to another embodiment of the present disclosure;

[0036] Fig.13A is along Fig.12 A cross-sectional view taken along line BB';

[0037] Fig. 13B is along Fig.12 A cross-sectional view taken along line CC' of ; and

[0038] Fig. 13C is along Fig.12 A cross-sectional view taken along line D-D'. DETAILED DESCRIPTION

[0039] The advantages and features of the present disclosure and its implementation methods will be explained by the following embodiments described with reference to the accompanying drawings. However, the present disclosure can be implemented in different forms, and the present disclosure should not be understood as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art. In addition, the present disclosure is limited only by the scope of the claims.

[0040] The shapes, sizes, proportions, angles, and numbers disclosed in the accompanying drawings for describing the embodiments of the present disclosure are merely examples, and therefore, the present disclosure is not limited to the details shown. Throughout the specification, similar reference numerals refer to similar elements. In the following description, when a detailed description of a related known function or configuration is deemed to unnecessarily obscure the focus of the present disclosure, the detailed description will be omitted.

[0041] In the case where “including,” “having,” and “comprising” described in the present specification are used, another part may be added unless “only” is used. Terms in the singular form may include plural forms unless indicated otherwise.

[0042] When describing a positional relationship, for example, when the positional relationship is described as "on", "above", "below", and "beside", unless "immediately" or "directly" is used, one or more other parts may be arranged between the two parts.

[0043] When describing a time relationship, for example, when a time sequence is described as "after," "subsequently," "then," and "before," discontinuous cases may be included unless "just" or "directly" is used.

[0044] Unless specifically mentioned, the expression that an element is “connected” or “coupled” to another element should be understood that the element may be directly connected or coupled to another element, may be indirectly connected or coupled to another element, or a third element may be interposed between the corresponding elements.

[0045] When describing elements of the present disclosure, terms such as “first”, “second”, etc. may be used. These terms are intended to identify corresponding elements from other elements, and the basis, order or number of the corresponding elements are not limited by these terms.

[0046] The term “at least one” should be understood to include any and all combinations of one or more of the associated listed items.

[0047] As those skilled in the art can fully understand, the features of various embodiments of the present disclosure can be coupled or combined with each other in part or in whole, and can interoperate and be driven technically differently from each other. The embodiments of the present disclosure can be performed independently of each other, or can be performed together in an interdependent relationship.

[0048] The component names used in this specification are selected in consideration of the ease of drafting this specification and may be different from the component names of actual products.

[0049] Hereinafter, preferred embodiments of a display device according to the present disclosure will be described in detail with reference to the accompanying drawings.

[0050] Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0051] Reference Figure 1 , the display device 100 includes: a panel 110; and a driving circuit for driving the display panel 110.

[0052] The display panel 110 may be a bonding type of a substrate 111 and an upper substrate 112. The substrate 111 and the upper substrate 112 may be glass substrates.

[0053] For example, the substrate 111 may include SiO2 or Al2O3 as a main component. At least one of the substrate 111 and the upper substrate 112 may be a flexible substrate. For example, the substrate 111 may include a transparent polyimide material. In consideration of a high temperature deposition process, a polyimide having excellent heat resistance that can withstand high temperatures may be used as the substrate 111 of the polyimide material.

[0054] The panel 110 may include a display area and a non-display area. The display area is an area where an image is displayed and may correspond to an active area of ​​a pixel array. The non-display area is an area where an image is not displayed and may be an edge portion of the panel 110 surrounding the display area. The driving circuit may be connected to at least one side of the non-display area, such as Figure 1 shown.

[0055] The driving circuit is connected to a pad electrode (not shown) provided in a non-display area of ​​the substrate 111, and provides image data of the display driving system to the panel 110. According to one example, the driving circuit includes a plurality of circuit films 122, a plurality of data driving integrated circuits 121, and a printed circuit board 140. The driving circuit may further include a timing controller (not shown). The gate driving integrated circuit may be arranged at an edge of the substrate 111 in the form of a gate in panel (GIP) and covered by the upper substrate 112. Although not shown, the gate driving integrated circuit may be arranged in a separate circuit film in the form of a chip on film (COF), or may be arranged at one edge of the substrate 111 in the form of a chip on glass (COG) or a chip on panel (COP).

[0056] According to one example, each of the plurality of circuit films 122 may be implemented as a flexible circuit film and then bent to reduce a bezel area of ​​the display device 100 .

[0057] Each of the data driver integrated circuits 121 may be packaged in each of the plurality of circuit films 122. Each of the data driver integrated circuits 121 may receive pixel data and a data control signal provided from a timing controller (not shown), and may provide the pixel data to a data line according to the data control signal by converting the pixel data into an analog type data signal for each pixel.

[0058] The printed circuit board 140 may transmit signals and power sources between a timing controller (not shown) and a driving circuit. Signal transmission lines and various power lines may be provided at the printed circuit board 140. For example, one or more printed circuit boards 140 may be provided according to the size of the panel 110 or the number of the circuit films 122.

[0059] A plurality of units U are arranged on the display area of ​​the panel 110 for realizing an image or realizing transparency by transmitting external light.

[0060] Reference Figure 2 , one unit U includes a plurality of sub-pixels SP, a plurality of data lines DL, and a plurality of scan lines SL arranged in the light emission area EA. Although the following drawings show that one unit U includes a transmission area TA, the display device according to the present specification is not limited to this example and may be a display device that does not include the transmission area TA.

[0061] As another embodiment, Figure 3A and Figure 3B The unit U of the display device shown may include one transmission area TA and a light emission area EA corresponding to the one transmission area TA.

[0062] Since the transmission area TA should transmit external light and improve transmittance, the light emitting area and the line are arranged in the transmission area TA in a minimum range. The scanning line SL passing through the transmission area TA may be arranged in the transmission area TA. The scanning line SL arranged in the transmission area TA may include a transparent conductive film.

[0063] The light emission area EA includes a plurality of sub-pixels for realizing an image, and a plurality of data lines DL may be arranged in the light emission area EA to correspond to the number of the plurality of sub-pixels (SP). Scan lines SL may be arranged in the light emission area EA in a direction orthogonal to the data lines DL. The scan lines SL may be at least one of a line for applying a gate signal and a sensing line for compensation. With respect to one unit U, the scan lines SL may be arranged as many as the number of sub-pixels SP arranged in the direction of one data line DL.

[0064] For example, if four sub-pixels SP are arranged in the light emission area EA relative to one unit U, four data lines DL corresponding to the four sub-pixels SP may be arranged to pass through the light emission area EA in a vertical direction, and the scan line SL may be arranged to pass through the light emission area EA in a direction crossing the data lines DL.

[0065] The plurality of sub-pixels SP may include four sub-pixels SP representing different colors corresponding to one transmission area TA in a quad form. At least one of the plurality of sub-pixels SP may indicate at least one of red light, green light, blue light, and white light.

[0066] Since each unit U includes the transmission area TA, each unit may have a transparent structure. According to the structure in which the unit U includes the transmission area TA, the display device according to the present specification may implement a transparent display.

[0067] In a unit U according to another example of a display device, as shown in FIG. Figure 3A and 3B As shown, a plurality of sub-pixels SP-1, SP-2, . . . , SP-K may be arranged in a light emission area EA corresponding to one transmission area TA in a direction parallel to the data line DL.

[0068] The data lines DL may be arranged by being inserted in the light emission area EA as many as the plurality of sub-pixels SP-1, SP-2, ..., SP-K. Since each of the plurality of sub-pixels SP-1, SP-2, ..., SP-K is arranged in the light emission area EA in a direction parallel to the data lines DL, the scan lines SL may be arranged as many as the number of sub-pixels SP-1, SP-2, ..., SP-K, which means in this case that the number K of sub-pixels included in one light emission area EA may be at least one natural number of 2 to 6.

[0069] The arrangement structure of the plurality of sub-pixels, the transmission area, and the light emitting area can be designed in various combinations without limitation. Figures 2 to 3B .

[0070] Reference Figures 4 to 6 , at least one SP of the plurality of sub-pixels SP arranged in the light emission area EA includes a pixel electrode and a driving transistor D-TR. If the display device according to the present disclosure implements a transparent display device, the plurality of sub-pixels SP may be arranged adjacent to the transmission area. If the display device according to the present disclosure implements a general display device, the plurality of sub-pixels SP may be arranged in a light emission area adjacent to the light emission area EA.

[0071] The scan line SL and the sensing line CSL passing through the sub-pixel SP may be arranged in the sub-pixel SP in a direction different from the voltage line VDD or the data line DL. The scan line SL and the sensing line CSL may be arranged between adjacent sub-pixels SP in the direction of the voltage line VDD or the data line DL. The scan line SL may be a gate signal line for applying a gate signal to the sub-pixel SP.

[0072] The repair line RL may be arranged in the sub-pixel SP in the same direction as the voltage line VDD or the data line DL. The repair line RL may be arranged between adjacent sub-pixels SP in a direction passing through the sub-pixel SP and the data line DL. The repair line RL may be arranged to partially overlap or cross at least one of the scan line SL, the sensing line CSL, and the connection electrode structure CES. The repair line RL may partially overlap the pixel electrode.

[0073] The pixel electrode includes a first sub-pixel electrode SPE1 and a second sub-pixel electrode SPE2, which are arranged to be spaced apart from each other in at least one sub-pixel SP, and the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 are electrically connected to one driving transistor D-TR. At this time, the pixel electrode is connected to a connection electrode structure CES, and the connection electrode structure CES is used to electrically connect at least one sub-pixel electrode of the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 to the driving transistor D-TR.

[0074] A conductive layer extending from the source / drain electrodes of the driving transistor D-TR and constituting a first electrode of the capacitor C1 contacts the third connection electrode CE3 of the connection electrode structure CES. At least one of the first and second subpixel electrodes SPE1 and SPE2 may be partially disposed on the driving transistor D-TR.

[0075] Since the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 are electrically connected to one driving transistor D-TR through the connection electrode structure CES, the first sub-emitting part SEA1 corresponding to the first sub-pixel electrode SPE1 and the second sub-emitting part SEA2 corresponding to the second sub-pixel electrode SPE2 can be driven simultaneously. The first sub-pixel electrode SPE1 may contact the repair line RL. At this time, at least a portion of the first sub-pixel electrode SPE1 protrudes to overlap at least a portion of the repair line RL.

[0076] At least one of the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 may include at least one of ITO, MoTi, Al, Ag, Mo, Ti, and Cu, or may be provided with a deposition structure of at least one of ITO, MoTi, Al, Ag, Mo, Ti, and Cu. At least one of the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 may include a deposition structure of ITO / MoTi / Cu / ITO or ITO / Mo / Cu / ITO.

[0077] If at least one of the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 includes MoTi or Mo, these electrodes can be used as a reflective panel, thereby enhancing the cavity effect of the OLED. The display device according to the present disclosure corresponds to a top emission mode, and at least one of the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 includes at least one conductor of MoTi, Al, Ag, Mo, Ti, and Cu, which is used as a reflective panel, wherein the conductor used as a reflective panel improves light emission efficiency.

[0078] At least one of the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 may have to Thickness.

[0079] A connection electrode structure CES for electrically connecting the driving transistor D-TR with the pixel electrode may be provided to protrude to one side of the pixel electrode, and the connection electrode structure CES may be partially disposed between the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2.

[0080] The connection electrode structure CES includes: a first connection electrode CE1 extending from a first end of the first sub-pixel electrode SPE1 to a first direction, wherein the first direction is a direction perpendicular to a direction from the first sub-pixel electrode to the second sub-pixel electrode; a second connection electrode CE2 extending from a first end of the second sub-pixel electrode SPE2 to the first direction; a third connection electrode CE3 electrically connected to the driving transistor D-TR and extending to the first direction; and a fourth connection electrode CE4 having a first end in contact with the first connection electrode CE1 and a second end in contact with the second connection electrode CE2, the fourth connection electrode CE4 being in contact with the third connection electrode CE3 between the first end and the second end. At this time, the fourth connection electrode CE4 is arranged in a layer different from at least one of the first to third connection electrodes CE1 to CE3, and is in contact with the first to third connection electrodes CE1 to CE3.

[0081] The first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3 are spaced apart from each other and arranged in parallel. The first connection electrode CE1 may be formed as one body with the first sub-pixel electrode SPE1, and the second connection electrode CE2 may be formed as one body with the second sub-pixel electrode SPE2. The third connection electrode CE3 is spaced apart from the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 and arranged between the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2.

[0082] The third connection electrode CE3 may be made of the same material as that constituting at least one of the first sub-pixel electrode SPE1, the second sub-pixel electrode SPE2, the first connection electrode CE1, and the second connection electrode CE2, or the third connection electrode CE3 may be arranged in the same layer as that of at least one of the first sub-pixel electrode SPE1, the second sub-pixel electrode SPE2, the first connection electrode CE1, and the second connection electrode CE2. The third connection electrode CE3 connected to the driving transistor may be electrically connected to the first connection electrode CE1 and the second connection electrode CE2 to drive the first sub-emitting portion SEA1 corresponding to the first sub-pixel electrode SPE1 and the second sub-emitting portion SEA2 corresponding to the second sub-pixel electrode SPE2 through one driving transistor.

[0083] The connection electrode CE4 may be arranged in a second direction different from or perpendicular to the first direction in which the first to third connection electrodes CE1 to CE3 are arranged, and the connection electrode CE4 electrically connects the first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3 to each other. The fourth connection electrode CE4 is arranged in a layer different from at least one of the first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3. The fourth connection electrode CE4 connects the first connection electrode CE1 with the third connection electrode CE3 through a bridge, or connects the second connection electrode CE2 with the third connection electrode CE3 through a bridge.

[0084] The fourth connection electrode CE4 may be arranged in the same layer as the active layer constituting the driving thin film transistor, and may be arranged on the buffer layer 220 on the substrate 111. The first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3 contact the fourth connection electrode CE4 through the contact hole passing through the first and second insulating films 240 and 250 arranged on the fourth connection electrode CE4. The fourth connection electrode CE4 may be made of the same material as the material constituting the active layer of the driving thin film transistor. At this time, the active layer may be an oxide semiconductor layer such as IGZO.

[0085] At least one of the first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3 may include at least one of ITO, MoTi, Al, Ag, Mo, Ti, and Cu, or may be provided with a deposition structure of at least one of ITO, MoTi, Al, Ag, Mo, Ti, and Cu. At least one of the first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3 may include a deposition structure of ITO / MoTi / Cu / ITO. At least one of the first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3 may have to Thickness.

[0086] The fourth connection electrode CE4 may include the same material as that constituting the active layer of the driving transistor and may be an oxide semiconductor layer. The fourth connection electrode CE4 may have or less thickness.

[0087] Reference Figure 7 , a driving transistor D-TR and at least two switching transistors T1 and T2 may be required to drive the sub-pixel SP. The gate electrode of the first switching transistor T1 is connected to the scan line SL to provide a signal of the data line DL connected to the source / drain electrode of the first switching transistor T1 to the gate electrode of the driving transistor D-TR.

[0088] The driving transistor D-TR applies the voltage VDD connected to the source electrode / drain electrode at one side of the driving transistor D-TR to the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 in response to the signal of the gate electrode. At this time, the connection electrode structure CES is electrically connected between the source electrode / drain electrode at the other side of the driving transistor D-TR and the first sub-pixel electrode and the second sub-pixel electrode SPE1 and SPE2 to apply the voltage or current of the source electrode / drain electrode at the other side of the driving transistor D-TR to the first sub-pixel electrode and the second sub-pixel electrode SPE1 and SPE2 through the connection electrode structure CES. The second switching transistor T2 is connected to the source electrode / drain electrode at the other side of the driving transistor D-TR, the gate electrode of the second switching transistor T2 is connected to the sensing line CSL, and the reference voltage V Ref Connected to one side of the source / drain electrode of the second switching transistor T2.

[0089] Reference Figures 8 to 11 If a dark spot or a bright spot appears in any sub-pixel SP of the display panel, a portion of the fourth connection electrode CE4 of the connection electrode structure CES can be laser cut, so that the first sub-pixel electrode SPE1 or the second sub-pixel electrode SPE2 from one sub-pixel SP can be electrically connected to the driving transistor D-TR.

[0090] For example, laser cutting may be performed on the fourth connection electrode CE4 between the second connection electrode CE2 and the third connection electrode CE3, thereby electrically disconnecting the second sub-pixel electrode SPE2 connected to the second connection electrode CE2 from the driving transistor D-TR, and the second light emission region corresponding to the second sub-pixel electrode SPE2 becomes a floating state. At this time, the first sub-pixel electrode SPE1 may be electrically connected to the driving transistor D-TR through the third connection electrode CE3, and thus the first sub-pixel electrode SPE1 may be driven, wherein the third connection electrode CE3 is electrically connected to the driving transistor D-TR through the first connection electrode CE1 and the fourth connection electrode CE4.

[0091] That is, even if a dark spot or a bright spot appears in one sub-pixel SP, laser cutting may be performed with respect to the fourth connection electrode CE4 to float one sub-emitting portion, thereby making it possible to normally drive the sub-pixel.

[0092] Although it is illustrated that the laser cutting is performed with respect to the fourth connection electrode CE4 between the second connection electrode CE2 and the third connection electrode CE3 , the laser cutting may also be formed with respect to the fourth connection electrode CE4 between the first connection electrode CE1 and the third connection electrode CE3 .

[0093] If a dark spot or a bright spot appears in the first light emission area corresponding to the first sub-pixel electrode SPE1, laser cutting may be performed on the fourth connection electrode CE4 between the first connection electrode CE1 and the third connection electrode CE3, thereby electrically disconnecting the first sub-pixel electrode SPE1 connected to the first connection electrode CE1 from the driving transistor D-TR, and the first sub-emission portion corresponding to the first sub-pixel electrode SPE1 becomes a floating state. At this time, the second sub-pixel electrode SPE2 may be electrically connected to the driving transistor D-TR through the third connection electrode CE3, and thus the second sub-pixel electrode SPE2 may be driven, wherein the third connection electrode CE3 is electrically connected to the driving transistor D-TR through the second connection electrode CE2 and the fourth connection electrode CE4.

[0094] Even if a dark spot or a bright spot appears in one sub-pixel SP, laser cutting may be performed with respect to the fourth connection electrode CE4 to drive the second sub-emitting part, whereby the sub-pixel may be normally driven.

[0095] If a dark spot or a bright spot appears in one subpixel SP, the first connection electrode CE1 and the fourth connection electrode CE4 arranged on a different layer from the third connection electrode CE3 may be separated from each other between the first connection electrode CE1 and the third connection electrode CE3, and the second connection electrode CE2 and the fourth connection electrode CE4 arranged on a different layer from the third connection electrode CE3 may be separated from each other between the second connection electrode CE2 and the third connection electrode CE3.

[0096] If a dark spot or a bright spot does not occur in one sub-pixel SP, the fourth link electrode CE4 electrically connects the first link electrode CE1, the second link electrode CE2, and the third link electrode CE3 to each other as described above.

[0097] If the fourth connection electrode CE4 is made of the same material as the other electrodes CE1, CE2 and CE3 or is made of metal, energy is increased when laser cutting is performed, and the laser is reflected by the metal to reduce the absorption rate, thereby increasing the power consumed by cutting, and thus may increase damage to the device. However, if the fourth connection electrode CE4 subjected to laser cutting is made of an oxide semiconductor layer, the absorption rate is high even in a low wavelength range, so that cutting can be performed.

[0098] In addition, the wavelength band for cutting the fourth connection electrode CE4 made of the oxide semiconductor layer does not react with the adjacent metal, thereby only the fourth connection electrode CE4 can be cut without causing damage to the OLED. If the fourth connection electrode CE4 has the same wavelength band as the first to third connection electrodes CE1, CE2 and CE3 to If the thickness is greater than , the energy increases when performing laser cutting, thereby possibly damaging adjacent layers. However, since the fourth connection electrode CE4 has or less thickness, so less energy is consumed during laser cutting, thereby minimizing possible damage to adjacent layers. In particular, since the fourth connection electrode CE4 is arranged by the same process as the active layer of the driving transistor, no additional process is required, thereby preventing productivity from being reduced.

[0099] The display device according to one embodiment of the present disclosure may realize a transparent display device. Figures 12 to 13C As shown, the display device includes a substrate 111, a transmission area TA for transmitting light outside the substrate 111, and a light emission area EA for displaying an image and arranged adjacent to the transmission area TA.

[0100] The transmission area TA may include a deposition structure of a substrate 111, a buffer layer 220, a first insulating film 240, a second insulating film 250, an organic light emitting diode EL, a cathode electrode 290, and an encapsulation layer 310. If the deposition structure of the transmission area TA is a deposition structure of the transmission area TA known in the art, it may be used without limitation.

[0101] The substrate 111 may be a glass substrate. For example, the substrate 111 may include SiO 2 or Al 2 O 3 as a main component.

[0102] The buffer layer 220 may be arranged on the transmission area TA and the light emission area EA, and the buffer layer 220 may include any one of a silicon nitride film (SiNx), a silicon oxide film (SiOx), and SiON, or may be a deposition structure including a plurality of layers made of a combination of SiNx, SiOx, and SiON. The buffer layer 220 may be formed on the entire upper surface of the substrate 111 to prevent water from penetrating into the light emitting diode through the substrate 111. Since the buffer layer 220 includes a plurality of inorganic films, the buffer layer 220 may improve the water vapor transmission rate (WVTR) of the panel.

[0103] The organic diode layer EL arranged in the transmission area TA is arranged on the second insulating film 250 and is an organic common layer constituting the OLED, and the organic diode layer EL includes a hole transport layer, a hole injection layer, an electron transport layer, and an electron injection layer. The organic diode layer EL of the transmission area TA may not include an organic light emitting layer.

[0104] Alternatively, the organic diode layer EL arranged in the transmission area TA may be an OLED including an organic light-emitting layer. In this case, the organic diode layer EL may include a deposition structure of a charge generation layer and a plurality of organic light-emitting layers. Since the pixel electrode is not arranged in the transmission area TA, current is not applied to the organic diode layer EL of the transmission area TA, and thus the organic diode layer EL of the transmission area TA does not emit light.

[0105] The organic diode layer EL is also in the light emission area EA and the transmission area TA, and includes a deposition structure of a charge generation layer and a plurality of organic light emitting layers. The organic diode layer EL of the light emission area EA emits white light.

[0106] One sub-pixel among the plurality of sub-pixels SP arranged in the light emission area EA emits at least one of red light, green light, blue light and white light. The light emission area EA may include four sub-pixels SP in a square form. One sub-pixel SP includes a driving transistor D-TR, a first sub-emission part SEA1 and a second sub-emission part SEA2 arranged on a substrate 111. The first sub-emission part SEA1 and the second sub-emission part SEA2 emit light of the same color. At this time, even if the organic diode layer EL emits white light, the sub-pixel SP also emits at least one of red light, green light, blue light and white light through a color filter to be described later.

[0107] The display device also includes: a data line, which is arranged to overlap with at least a portion of the sub-pixel from the first sub-pixel electrode SPE1 to the second sub-pixel electrode SPE2; a scan line SL, which is arranged between adjacent sub-pixels SP along a direction different from that of the data line DL; and a repair line RL, which is arranged between at least a portion of the sub-pixel and at least a portion of a transmission area TA.

[0108] A first end of the repair line RL may overlap with at least a portion of a first subpixel electrode SPE1 of at least one subpixel SP, and a second end of the repair line RL may extend to an adjacent subpixel SP and overlap with at least a portion of a first subpixel electrode SPE1 of the adjacent subpixel SP, whereby the repair line RL may be electrically floated with the first subpixel electrode SPE1 of the adjacent subpixel SP.

[0109] A first end of the repair line RL may overlap at least a portion of a first subpixel electrode SPE1 of at least one subpixel SP, and a second end of the repair line RL may extend to an adjacent subpixel SP and be electrically connected to at least a portion of the first subpixel electrode SPE1 of the adjacent subpixel SP.

[0110] A first end of the repair line RL may overlap at least a portion of a first subpixel electrode SPE1 of at least one subpixel SP, and a second end of the repair line RL may extend to its adjacent subpixel SP, and thus the second end of the repair line RL overlaps and is electrically connected to at least a portion of the first subpixel electrode SPE1 of the adjacent subpixel SP.

[0111] The driving transistor D-TR may be disposed to correspond to each of the plurality of sub-pixels SP. The driving transistor D-TR may be disposed on the buffer layer 220 of the substrate 111 and may include an active layer 22, a gate electrode 28, a source electrode 24, and a drain electrode 26.

[0112] The active layer 22 of the driving transistor D-TR may be disposed on the buffer layer 220 and may overlap the gate electrode 28, the source electrode 24, and the drain electrode 26. The active layer 22 may directly contact the source electrode 24 and the drain electrode 26 and face the gate electrode 28 through the interposed gate insulating film 230. The active layer 22 may be an oxide-based conductive semiconductor.

[0113] A light shielding layer 11 may be disposed below the driving transistor D-TR. At this time, a buffer layer 220 is disposed between the light shielding layer 11 and the active layer 22. In order to insulate the active layer 22 constituting the driving transistor D-TR from the gate electrode 28, a gate insulating film 230 is interposed between the active layer 22 and the gate electrode 28. In order to insulate the gate electrode 28 from the source and drain electrodes 24 and 26, a first insulating layer 240 is interposed between the gate electrode 28 and the source and drain electrodes 24 and 26.

[0114] The capacitor C1 and the capacitor C2 may be arranged on one side of the driving transistor D-TR, and the first electrode of the capacitor C1 may be formed extending along with the source electrode 24 of the driving transistor D-TR. At this time, the light shielding layer 11 extends to a position where the capacitor C1 and the capacitor C2 are arranged below the driving transistor D-TR, whereby the light shielding layer 11 is arranged below the first electrode of the capacitor C1.

[0115] The capacitor C1 and the capacitor C2 form a capacitance between the electrode of the capacitor C2 and the light shielding layer 11 , and form a capacitance between the electrode of the capacitor C2 and the electrode of the capacitor C1 , whereby the total capacitance can be increased.

[0116] An overcoat layer 260 is disposed on the second insulating film 250 to compensate for the step difference of several deposition layers including the driving transistor D-TR and the second insulating film 250 for protecting the source electrode 24 and the drain electrode 26 of the driving transistor D-TR.

[0117] At least one of the first insulating film 240 and the second insulating film 250 may include any one of a silicon nitride film (SiNx), a silicon oxide film (SiOx), and SiON, or may include a deposition structure of SiNx, SiOx, and SiON. The first insulating film 240 and the second insulating film 250 may be made of the same material.

[0118] The pixel electrode is arranged on the upper coating layer 260 of the light emission area EA. The upper coating layer 260 is arranged in the light emission area EA, but not in the transmission area TA. Even when the connection electrode structure CES is arranged in the area between the transmission area TA and the light emission area EA, the upper coating layer 260 may not be provided. The upper coating layer 260 may include resins such as photo acrylic and polyimide.

[0119] One sub-pixel SP includes a first sub-pixel emission part SEA1 and a second sub-pixel emission part SEA2, and the pixel electrode of the light emission area EA is arranged to correspond to the first sub-emission part SEA1 and the second sub-emission part SEA2. The number of sub-emission parts may be defined as the number of sub-pixel electrodes constituting the pixel electrode. The first sub-emission part SEA1 and the second sub-emission part SEA2 constituting one sub-pixel SP emit light of the same color.

[0120] In the light emission area EA, the pixel electrode contacts the source electrode 24 of the driving transistor D-TR through the contact hole of the second insulating film 250 and the overcoat layer 260. The first and second subpixel electrodes SPE1 and SPE2 are surrounded by the bank 280 to define the first and second sub-emission parts SEA1 and SEA2.

[0121] A connection electrode structure CES electrically connecting the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 constituting one sub-pixel SP to each other is arranged between the transmission area TA and the light emission area EA. The connection electrode structure CES may be arranged to protrude from the sub-pixel SP toward the transmission area TA. The transmission area TA may be a diagonal shape corresponding to the connection electrode structure CES arranged to protrude.

[0122] The connection electrode structure CES includes first to fourth connection electrodes CE1, CE2, CE3, and CE4, the first to third connection electrodes CE1, CE2, and CE3 are arranged on the second insulating film 250, and the fourth connection electrode CE4 is arranged on the buffer layer 220. At this time, the first to third connection electrodes CE1, CE2, and CE3 contact the fourth connection electrode CE4 through the contact holes of the second insulating film 250 and the contact holes of the first insulating film 240.

[0123] The pixel electrode and the first to third connection electrodes CE1, CE2, and CE3 constituting the connection electrode structure CES may be made of the same material and may include at least one of ITO, MoTi, Al, Ag, Mo, Ti, and Cu, or may be provided with a deposition structure of at least one of ITO, MoTi, Al, Ag, Mo, Ti, and Cu. The pixel electrode and the first to third connection electrodes CE1, CE2, and CE3 may include a deposition structure of ITO / MoTi / Cu / ITO. Since the first to third connection electrodes CE1, CE2, and CE3 are formed by the same process as that of the pixel electrode, a separate additional process may be omitted, thereby improving productivity.

[0124] If the pixel electrode includes MoTi or Mo, these electrodes can be used as a reflective panel, thereby enhancing the cavity effect of the OLED. The display device according to the present disclosure corresponds to a top emission mode, and the pixel electrode includes at least one conductor of MoTi, Al, Ag, Mo, Ti and Cu, which is used as a reflective panel, wherein the conductor used as a reflective panel improves light emission efficiency.

[0125] The pixel electrode and at least one of the first to third link electrodes CE1, CE2, and CE3 may have to Thickness.

[0126] The fourth connection electrode CE4 is made of an oxide semiconductor of the same material as that of the active layer of the driving transistor D-TR, and is arranged in the same layer as the active layer 22 of the driving transistor D-TR. The fourth connection electrode CE4 may have or less thickness.

[0127] If the fourth connection electrode CE4 is made of the same material as the other electrodes CE1, CE2 and CE3 or is made of metal, energy is increased when laser cutting is performed, and the laser is reflected by the metal to reduce the absorption rate, thereby increasing the power consumed by cutting, and thus the damage to the device may be increased. However, if the fourth connection electrode CE4 subjected to laser cutting is made of an oxide semiconductor layer, the absorption rate is high even in a low wavelength range, so that the fourth connection electrode CE4 can be easily cut. In addition, the wavelength band for cutting the fourth connection electrode CE4 made of the oxide semiconductor layer does not react with the adjacent metal, so that only the fourth connection electrode CE4 can be cut, and damage to the organic diode layer EL constituting the OLED device or TFT device such as the driving transistor D-TR is not caused. If the fourth connection electrode CE4 has the same to If the thickness is greater than , the energy increases when performing laser cutting, thereby possibly damaging adjacent layers. However, since the fourth connection electrode CE4 has or less thickness, so less energy is consumed during laser cutting, thereby minimizing possible damage to adjacent layers. In particular, since the fourth connection electrode CE4 is arranged by the same process as the active layer of the driving transistor D-TR, no additional process is required, thereby preventing productivity from being reduced.

[0128] The fourth connection electrode CE4 of the connection electrode structure CES arranged between the light emission area EA and the transmission area TA of the sub-pixel SP adjacent to one sub-pixel SP is cut and arranged to be disconnected. Even if the fourth connection electrode CE4 is arranged to be partially disconnected, at least one of the first sub-pixel electrode SPE1 corresponding to the first sub-emission part SEA1 of the adjacent sub-pixel SP and the second sub-pixel electrode SPE2 corresponding to the second sub-emission part SEA2 is electrically connected to the driving transistor D-TR, thereby making it possible to drive the adjacent sub-pixel SP.

[0129] Therefore, since two sub-emitting parts SEA1 and SEA2 are provided in one sub-pixel SP, even if a dark spot or a bright spot appears in one sub-pixel SP, light is emitted through the other sub-emitting part, and thus one sub-pixel SP may be normally driven.

[0130] Since the display device according to the present disclosure includes the connection electrode structure CES, even if bright spots or dark spots appear, the display device can drive the sub-pixels SP without being restricted by the appearance of these bright spots or dark spots.

[0131] The embankment 280 is not arranged in the transmission area TA, but is arranged in the light emission area EA to improve the transmittance of the transmission area TA, and the embankment 280 is arranged at the edge of the pixel electrode so that the pixel electrode is exposed. The embankment 280 is arranged in the area where the connection electrode structure CES is arranged between the transmission area TA and the light emission area EA. The embankment 280 may cover the entire surface of the fourth connection electrode CE4, and may partially cover the first connection electrode CE1, the second connection electrode CE2, and the third connection electrode CE3. At this time, the embankment 280 is arranged to cover the following areas: the area where the first connection electrode CE1 contacts the fourth connection electrode CE4; the area where the second connection electrode CE2 contacts the fourth connection electrode CE4; and the area where the third connection electrode CE3 contacts the fourth connection electrode CE4.

[0132] The organic diode layer EL is disposed on the bank 280 for defining pixel electrodes of one sub-pixel SP including the first sub-pixel electrode SPE1 and the second sub-pixel electrode SPE2 of the light emission area EA and adjacent sub-pixels SP.

[0133] The organic diode layer EL may be arranged in both the transmission area TA and the light emission area EA. The organic diode layer EL includes a deposition structure of a hole injection layer, a hole transport layer, a charge generation layer, an electron transport layer, an electron injection layer, and a plurality of organic light emitting layers, and emits white light through an anode electrode 270 and a cathode electrode 290 implemented by a pixel electrode. Since the white light of the organic diode layer EL is converted into red light, green light, blue light, and white light by a color filter 320 on the organic diode layer EL, one sub-pixel SP emits at least one of red light, green light, blue light, and white light.

[0134] In another embodiment, although organic common layers such as a hole injection layer, a hole transport layer, a charge generation layer, an electron transport layer, and an electron injection layer may be arranged in both the transmission area TA and the light emission area EA, the organic light emitting layer may be arranged only in the light emission area EA.

[0135] Since the cathode electrode 290 is completely arranged on the organic diode layer EL, the cathode electrode 290 is arranged in both the transmission area TA and the light emission area EA. The cathode electrode 290 may be made of a transparent conductor or a semi-transparent conductor. The cathode electrode 290 may be formed of a transparent conductive oxide (TCO) such as indium tin oxide (ITO) and indium zinc oxide (IZO). The cathode electrode 290 may include Mg and Ag, which are general metal electrodes, and at this time, the transmittance may be increased by controlling the ratio of Mg and Ag, thereby realizing a transparent conductor.

[0136] The encapsulation layer 310 may cover both the transmission area and the light emission area EA. According to one example, the encapsulation layer 310 may be completely disposed on the cathode electrode 290. The encapsulation layer 310 may be used to prevent external water from penetrating into the organic diode layer EL, thereby preventing the organic diode layer EL from deteriorating. The encapsulation layer 310 may be disposed by a combination of at least one inorganic film and at least one organic film.

[0137] The display device according to the present disclosure may further include a color filter 320 on the encapsulation layer 310. The color filter 320 is arranged to correspond to the light emission area EA and is not arranged in the transmission area TA. The color filter 320 is arranged on the encapsulation layer 310 to overlap with at least one sub-pixel SP. The color filter 320 includes an R filter, a G filter, and a B filter 320 to correspond to the light of a predetermined color to be emitted by the sub-pixel SP.

[0138] The color filter 320 can prevent light from being reflected by the metal material arranged on the substrate 111, and can improve the emission efficiency of the light emission area EA by preventing light leakage from the light emission area EA. Although not shown, a black matrix can also be arranged between the color filters 320. The black matrix can prevent reflection of the line under the black matrix or prevent light leakage. In addition, an upper coating layer can also be arranged between the encapsulation layer 310 and the color filter 320.

[0139] A display device according to one embodiment of the present disclosure includes: a pixel electrode, the pixel electrode including a first sub-pixel electrode and a second sub-pixel electrode, the first sub-pixel electrode and the second sub-pixel electrode being arranged to be spaced apart from each other in at least one sub-pixel among a plurality of sub-pixels on a substrate; a driving transistor, the driving transistor driving at least one sub-pixel; and a connecting electrode structure, the connecting electrode structure electrically connecting at least one sub-pixel electrode among the first sub-pixel electrode and the second sub-pixel electrode of the pixel electrode to the driving transistor.

[0140] A display device according to another embodiment of the present disclosure includes: a transmission area that transmits external light of a substrate; a first sub-pixel electrode that is arranged in at least one sub-pixel among a plurality of sub-pixels that are arranged adjacent to the transmission area; a second sub-pixel electrode that is arranged to be spaced apart from the first sub-pixel electrode within at least one sub-pixel; a driving transistor that drives at least one sub-pixel; and a connecting electrode structure that electrically connects at least one of the first sub-pixel electrode and the second sub-pixel electrode to the driving transistor.

[0141] The connecting electrode structure may include: a first connecting electrode, which extends from the first end of the first sub-pixel electrode to the first direction, wherein the first direction is a direction perpendicular to the direction from the first sub-pixel electrode to the second sub-pixel electrode; a second connecting electrode, which extends from the first end of the second sub-pixel electrode to the first direction; a third connecting electrode, which is electrically connected to the driving transistor and extends to the first direction; and a fourth connecting electrode, which has a first end in contact with the first connecting electrode and a second end in contact with the second connecting electrode, the fourth connecting electrode is in contact with the third connecting electrode between the first end and the second end, and is arranged in a layer different from and in contact with at least one of the first to third connecting electrodes.

[0142] The connection electrode structure may include: a first connection electrode, which extends from a first end of a first sub-pixel electrode to a first direction, wherein the first direction is a direction perpendicular to a direction from the first sub-pixel electrode to the second sub-pixel electrode; a second connection electrode, which extends from a first end of the second sub-pixel electrode to the first direction; a third connection electrode, which is arranged between the first connection electrode and the second connection electrode and extends to the first direction; and a fourth connection electrode, wherein a first end or a second end of the fourth connection electrode is electrically connected to at least one of the first sub-pixel electrode and the second sub-pixel electrode. The first connection electrode is made of the same material as the first sub-pixel electrode or is arranged on the same layer as the first sub-pixel electrode, the second connection electrode is made of the same material as the second sub-pixel electrode or is arranged on the same layer as the second sub-pixel electrode, and the fourth connection electrode is made of a material different from the first connection electrode and the second connection electrode or is arranged on a different layer from the first connection electrode and the second connection electrode, or the fourth connection electrode includes a material that is the same as a material constituting an active layer of a driving transistor or is arranged on the same layer as the active layer.

[0143] At least one of the first subpixel electrode and the second subpixel electrode may be partially disposed on the driving transistor, and the fourth connection electrode may be disposed on the same layer as an active layer constituting the driving transistor.

[0144] The fourth connection electrode may be arranged in a second direction different from or orthogonal to the first direction, and the fourth connection electrode may connect the first connection electrode with the third connection electrode through a bridge, or connect the second connection electrode with the third connection electrode through a bridge.

[0145] The display device may also include: a buffer layer on the substrate, a first insulating film on the active layer on the buffer layer or the fourth connecting electrode, and a second insulating film on the first insulating film, wherein at least one of the second connecting electrode and the third connecting electrode is connected to the fourth connecting electrode through a contact hole of the first insulating film and the second insulating film.

[0146] A first end of the third connection electrode may be in contact with a conductive layer extending from a source electrode or a drain electrode of the driving transistor and constituting one electrode of a capacitor in at least one sub-pixel.

[0147] A third connection electrode connected to the driving transistor may be disposed between the first sub-pixel electrode and the second sub-pixel electrode.

[0148] The third connecting electrode may be made of the same material as the material constituting at least one of the first subpixel electrode, the second subpixel electrode, the first connecting electrode and the second connecting electrode, or the third connecting electrode may be arranged on the same layer as at least one of the first subpixel electrode, the second subpixel electrode, the first connecting electrode and the second connecting electrode.

[0149] The fourth connection electrode may electrically connect the first connection electrode, the second connection electrode, and the third connection electrode to one another.

[0150] At least one sub-pixel may also include: a data line arranged to overlap with at least a portion of the at least one sub-pixel along a direction from the first sub-pixel electrode to the second sub-pixel electrode; and a repair line arranged on one side of the at least one sub-pixel along a direction parallel to the data line, wherein at least a portion of the repair line is arranged to overlap or cross the connecting electrode structure, and the repair line can extend in the direction of an adjacent sub-pixel adjacent to the sub-pixel along the direction of the data line.

[0151] At least one of the first subpixel electrode, the second subpixel electrode, the first connecting electrode, the second connecting electrode and the third connecting electrode may include at least one of ITO, MoTi, Al, Ag, Mo, Ti and Cu, or a deposition structure of at least one of ITO, MoTi, Al, Ag, Mo, Ti and Cu may be provided.

[0152] At least one of the first sub-pixel electrode, the second sub-pixel electrode, the first connection electrode, the second connection electrode, and the third connection electrode may include a four-layer structure of ITO / MoTi / Cu / ITO.

[0153] At least one of the first subpixel electrode, the second subpixel electrode, the first connection electrode, the second connection electrode, and the third connection electrode may have to Thickness.

[0154] The fourth connection electrode may be an oxide semiconductor layer, and the fourth connection electrode may include the same material as the active layer of the driving transistor, and the thickness of the fourth connection electrode may be or smaller.

[0155] The fourth connection electrode may include the same material as that of the oxide semiconductor layer constituting the driving transistor.

[0156] The fourth connection electrode is connected to the third connection electrode between a first end of the first connection electrode and a first end of the second connection electrode, and the third connection electrode is connected to a first electrode of a capacitor arranged in at least one sub-pixel.

[0157] The fourth connection electrode may be disconnected between the first connection electrode and the third connection electrode or between the second connection electrode and the third connection electrode, or may be electrically connected to the first connection electrode, the second connection electrode, and the third connection electrode.

[0158] The display device may also include: a data line arranged to overlap with at least a portion of at least one sub-pixel along a direction from the first sub-pixel electrode to the second sub-pixel electrode; a scan line arranged between at least one sub-pixel and an adjacent sub-pixel of the at least one sub-pixel along a direction different from the data line; and a repair line arranged between at least a portion of the at least one sub-pixel and at least a portion of the transmission area.

[0159] The first end of the repair line may overlap with at least a portion of the first subpixel electrode of at least one subpixel, and the second end of the repair line may extend to an adjacent subpixel and electrically float with the first subpixel electrode of the adjacent subpixel while overlapping with at least a portion of the first subpixel electrode of the adjacent subpixel, or the first end of the repair line may overlap with at least a portion of the first subpixel electrode of at least one subpixel, and the second end of the repair line may extend to an adjacent subpixel and electrically connect to at least a portion of the first subpixel electrode of the adjacent subpixel, or the first end of the repair line may overlap with at least a portion of the first subpixel electrode of at least one subpixel, and the second end of the repair line may extend to an adjacent subpixel and overlap with and electrically connect to at least a portion of the first subpixel electrode of the adjacent subpixel.

[0160] The display device may also include: an organic diode layer, which is arranged on the first sub-pixel electrode and the second sub-pixel electrode; a cathode electrode, which is arranged on the organic diode layer; and an encapsulation layer, which is arranged on the cathode electrode, wherein the plurality of sub-pixels may be provided with four sub-pixels arranged in a square, and at least one sub-pixel emits at least one of red light, green light, blue light and white light, and the emitted light travels from the cathode electrode to the encapsulation layer.

[0161] The display device may further include a color filter disposed on the encapsulation layer to overlap with the at least one sub-pixel.

[0162] A display device according to another embodiment of the present disclosure may further include: a first sub-emitting portion, which corresponds to the first sub-pixel electrode; and a second sub-emitting portion, which is arranged to be spaced apart from the first sub-emitting portion, and corresponds to the second sub-pixel electrode, wherein the first connecting electrode is arranged between the first sub-emitting portion and the transmission area, the second connecting electrode is arranged between the second sub-emitting portion and the transmission area, and the fourth connecting electrode is arranged between the first sub-emitting portion and the second sub-emitting portion and the transmission area.

[0163] The first sub-emitting portion and the second sub-emitting portion emit the same light.

[0164] According to another embodiment of the present disclosure, a display device includes: a pixel electrode, the pixel electrode including a first sub-pixel electrode and a second sub-pixel electrode, the first sub-pixel electrode and the second sub-pixel electrode being arranged to be spaced apart from each other in at least one sub-pixel among a plurality of sub-pixels on a substrate; a driving transistor, the driving transistor driving at least one sub-pixel; and a connecting electrode structure, the connecting electrode structure electrically connecting at least one sub-pixel electrode among the first sub-pixel electrode and the second sub-pixel electrode to the driving transistor, wherein a repair line is arranged between adjacent sub-pixels among the plurality of sub-pixels along a direction passing through the at least one sub-pixel, and the repair line partially overlaps with the pixel electrode.

[0165] It will be apparent to those skilled in the art that the disclosure described above is not limited by the above-described embodiments and drawings, and that various substitutions, modifications and variations may be made in the disclosure without departing from the spirit or scope of the disclosure. Therefore, the scope of the disclosure is defined by the appended claims, and all variations or modifications obtained according to the meaning, scope and equivalent concepts of the claims are intended to fall within the scope of the disclosure.

[0166] The various embodiments described above may be combined to provide additional embodiments. The entire contents of all U.S. patents, U.S. patent application publications, U.S. patent applications, foreign patents, foreign patent applications, and non-patent publications cited in this specification and / or listed in the application data sheet are incorporated herein by reference. If it is necessary to adopt the concepts in various patents, applications, and disclosures to provide other embodiments, various aspects of the present embodiment may be modified.

[0167] These and other changes can be made to the present embodiment in light of the above detailed description. Generally, in the following claims, the terms used should not be interpreted as limiting the claims to the specific embodiments disclosed in the specification and claims, but should be interpreted to include all possible embodiments and the full range of equivalents of such claims. Therefore, the claims are not limited by the disclosure.

Claims

1. A display device, comprising: a pixel electrode, the pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode, the first sub-pixel electrode and the second sub-pixel electrode being arranged to be spaced apart from each other in at least one sub-pixel among a plurality of sub-pixels on a substrate, wherein the first sub-pixel electrode and the second sub-pixel electrode are arranged in the same sub-pixel; a driving transistor, the driving transistor driving the at least one sub-pixel; and a connecting electrode structure, wherein the connecting electrode structure electrically connects at least one of the first sub-pixel electrode and the second sub-pixel electrode of the pixel electrode to the driving transistor, Wherein, the at least one sub-pixel further includes: a data line arranged to overlap at least a portion of the at least one sub-pixel in a direction from the first sub-pixel electrode to the second sub-pixel electrode; and a repair line, wherein the repair line is arranged on one side of the at least one sub-pixel in a direction parallel to the data line, wherein at least a portion of the repair line is arranged to overlap with at least a portion of the connection electrode structure or to intersect with the connection electrode structure, and The repair line extends in a direction of an adjacent sub-pixel adjacent to the at least one sub-pixel in a direction of the data line.

2. The display device according to claim 1, wherein: The connecting electrode structure comprises: a first connecting electrode, the first connecting electrode extending from a first end of the first sub-pixel electrode in a first direction, wherein the first direction is a direction perpendicular to a direction from the first sub-pixel electrode to the second sub-pixel electrode; a second connecting electrode, the second connecting electrode extending from a first end of the second sub-pixel electrode toward the first direction; a third connection electrode, the third connection electrode being electrically connected to the driving transistor and extending toward the first direction; and A fourth connecting electrode, the fourth connecting electrode having a first end in contact with the first connecting electrode and a second end in contact with the second connecting electrode, the fourth connecting electrode in contact with the third connecting electrode between the first end and the second end, and arranged in a layer different from at least one of the first connecting electrode, the second connecting electrode and the third connecting electrode and in contact with the first connecting electrode, the second connecting electrode and the third connecting electrode.

3. The display device according to claim 2, wherein: At least one of the first sub-pixel electrode and the second sub-pixel electrode is partially arranged on the driving transistor, and the fourth connection electrode is arranged on the same layer as an active layer constituting the driving transistor, The fourth connection electrode is arranged along a second direction different from or orthogonal to the first direction, and the fourth connection electrode connects the first connection electrode to the third connection electrode through a bridge, or connects the second connection electrode to the third connection electrode through a bridge.

4. The display device according to claim 3, wherein: The fourth connection electrode is an oxide semiconductor layer, or the fourth connection electrode includes the same material as the active layer of the driving transistor and has a thickness of or smaller.

5. The display device according to claim 3 or 4, further comprising: a buffer layer on the substrate; a first insulating film on the active layer or the fourth connecting electrode, wherein the active layer or the fourth connecting electrode is on the buffer layer; and a second insulating film on the first insulating film, wherein at least one of the second connection electrode and the third connection electrode is connected to the fourth connection electrode through the contact holes of the first insulating film and the second insulating film, wherein a first end of the third connection electrode contacts a conductive layer extending from a source electrode or a drain electrode of the driving transistor and constituting an electrode of a capacitor in the at least one sub-pixel, The third connection electrode connected to the driving transistor is arranged between the first sub-pixel electrode and the second sub-pixel electrode.

6. The display device according to claim 5, wherein: The third connecting electrode is made of the same material as the material constituting at least one of the first sub-pixel electrode, the second sub-pixel electrode, the first connecting electrode and the second connecting electrode, or the third connecting electrode is arranged on the same layer as at least one of the first sub-pixel electrode, the second sub-pixel electrode, the first connecting electrode and the second connecting electrode.

7. The display device according to claim 2, wherein: At least one of the first subpixel electrode, the second subpixel electrode, the first connecting electrode, the second connecting electrode and the third connecting electrode includes at least one of ITO, MoTi, Al, Ag, Mo, Ti and Cu, or is provided with a deposition structure of at least one of ITO, MoTi, Al, Ag, Mo, Ti and Cu, or at least one of the first subpixel electrode, the second subpixel electrode, the first connecting electrode, the second connecting electrode and the third connecting electrode includes a four-layer structure of ITO / MoTi / Cu / ITO.

8. The display device according to claim 2, wherein: At least one of the first sub-pixel electrode, the second sub-pixel electrode, the first connecting electrode, the second connecting electrode, and the third connecting electrode has to Thickness.

9. A display device, comprising: a transmission region that transmits external light of the substrate; a first sub-pixel electrode disposed in at least one sub-pixel among a plurality of sub-pixels disposed adjacent to the transmission area; a second sub-pixel electrode, the second sub-pixel electrode being arranged to be spaced apart from the first sub-pixel electrode within the at least one sub-pixel, wherein the first sub-pixel electrode and the second sub-pixel electrode are arranged within the same sub-pixel; a driving transistor, the driving transistor driving the at least one sub-pixel; and a connecting electrode structure, wherein the connecting electrode structure electrically connects at least one of the first sub-pixel electrode and the second sub-pixel electrode to the driving transistor, Wherein, the at least one sub-pixel further includes: a data line arranged to overlap at least a portion of the at least one sub-pixel in a direction from the first sub-pixel electrode to the second sub-pixel electrode; and a repair line, wherein the repair line is arranged on one side of the at least one sub-pixel in a direction parallel to the data line, wherein at least a portion of the repair line is arranged to overlap with at least a portion of the connection electrode structure or to intersect with the connection electrode structure, and The repair line extends in a direction of an adjacent sub-pixel adjacent to the at least one sub-pixel in a direction of the data line.

10. The display device according to claim 9, wherein: The connecting electrode structure comprises: a first connecting electrode, the first connecting electrode extending from a first end of the first sub-pixel electrode in a first direction, wherein the first direction is a direction perpendicular to a direction from the first sub-pixel electrode to the second sub-pixel electrode; a second connecting electrode, the second connecting electrode extending from a first end of the second sub-pixel electrode toward the first direction; a third connecting electrode, the third connecting electrode being arranged between the first sub-pixel electrode and the second sub-pixel electrode and extending toward the first direction; and a fourth connecting electrode, wherein a first end or a second end of the fourth connecting electrode is electrically connected to at least one of the first sub-pixel electrode and the second sub-pixel electrode, In which, the first connecting electrode is made of the same material as the first sub-pixel electrode or is arranged on the same layer as the first sub-pixel electrode, the second connecting electrode is made of the same material as the second sub-pixel electrode or is arranged on the same layer as the second sub-pixel electrode, and the fourth connecting electrode is made of a material different from the materials of the first connecting electrode and the second connecting electrode or is arranged on a different layer from the first connecting electrode and the second connecting electrode, or the fourth connecting electrode includes the same material as the active layer constituting the driving transistor or is arranged on the same layer as the active layer.

11. The display device according to claim 10, wherein: The fourth connection electrode includes the same material as the material of the oxide semiconductor layer constituting the driving transistor, or the fourth connection electrode is arranged on the same layer as the oxide semiconductor layer and has a thickness of or smaller.

12. The display device according to claim 10 or 11, wherein: At least one of the first subpixel electrode, the second subpixel electrode, the first connecting electrode, the second connecting electrode and the third connecting electrode includes at least one of ITO, MoTi, Al, Ag, Mo, Ti and Cu, or is provided with a deposition structure of at least one of ITO, MoTi, Al, Ag, Mo, Ti and Cu, or at least one of the first subpixel electrode, the second subpixel electrode, the first connecting electrode, the second connecting electrode and the third connecting electrode includes a four-layer structure of ITO / MoTi / Cu / ITO.

13. The display device according to claim 10 or 11, wherein: At least one of the first sub-pixel electrode, the second sub-pixel electrode, the first connecting electrode, the second connecting electrode, and the third connecting electrode has to Thickness.

14. The display device according to claim 10 or 11, wherein: The fourth connection electrode is connected to the third connection electrode between a first end of the first connection electrode and a first end of the second connection electrode, and the third connection electrode is connected to a first electrode of a capacitor arranged in the at least one sub-pixel.

15. The display device according to claim 10 or 11, wherein: The fourth connection electrode is disconnected between the first connection electrode and the third connection electrode or between the second connection electrode and the third connection electrode, or the fourth connection electrode is electrically connected to the first connection electrode, the second connection electrode and the third connection electrode.

16. The display device according to claim 9, further comprising: a scan line, wherein the scan line is arranged between the at least one sub-pixel and an adjacent sub-pixel of the at least one sub-pixel along a direction different from that of the data line, The repair line is arranged between at least a portion of the at least one sub-pixel and at least a portion of the transmission area. A first end of the repair line overlaps at least a portion of the first subpixel electrode of the at least one subpixel, and a second end of the repair line extends to the adjacent subpixel and electrically floats with the first subpixel electrode of the adjacent subpixel while overlapping at least a portion of the first subpixel electrode of the adjacent subpixel, or The first end of the repair line overlaps at least a portion of the first subpixel electrode of the at least one subpixel, and the second end of the repair line extends to the adjacent subpixel and is electrically connected to at least a portion of the first subpixel electrode of the adjacent subpixel, or The first end of the repair line overlaps with at least a portion of the first subpixel electrode of the at least one subpixel, and the second end of the repair line extends to the adjacent subpixel and overlaps with and is electrically connected to at least a portion of the first subpixel electrode of the adjacent subpixel.

17. The display device according to claim 9, further comprising: an organic diode layer, wherein the organic diode layer is arranged on the first sub-pixel electrode and the second sub-pixel electrode; a cathode electrode, the cathode electrode being arranged on the organic diode layer; an encapsulation layer, the encapsulation layer being arranged on the cathode electrode; as well as a color filter arranged on the encapsulation layer to overlap with the at least one sub-pixel, The plurality of sub-pixels are provided with four sub-pixels arranged in a square, and the at least one sub-pixel emits at least one of red light, green light, blue light and white light, wherein the emitted light travels from the cathode electrode toward the encapsulation layer.

18. The display device according to claim 10, further comprising: a first sub-emitting portion, the first sub-emitting portion corresponding to the first sub-pixel electrode; as well as a second sub-emitting portion, the second sub-emitting portion being arranged to be spaced apart from the first sub-emitting portion, the second sub-emitting portion corresponding to the second sub-pixel electrode, wherein the first connection electrode is arranged between the first sub-emitting portion and the transmission area, the second connection electrode is arranged between the second sub-emitting portion and the transmission area, and the fourth connection electrode is arranged between the first sub-emitting portion and the second sub-emitting portion and the transmission area, and The first sub-emitting portion and the second sub-emitting portion emit light of the same color.

19. A display device comprising: a pixel electrode, the pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode, the first sub-pixel electrode and the second sub-pixel electrode being arranged to be spaced apart from each other in at least one sub-pixel among a plurality of sub-pixels on a substrate, wherein the first sub-pixel electrode and the second sub-pixel electrode are arranged in the same sub-pixel; a driving transistor, the driving transistor driving the at least one sub-pixel; and a connecting electrode structure, wherein the connecting electrode structure electrically connects at least one of the first sub-pixel electrode and the second sub-pixel electrode to the driving transistor, wherein a repair line is arranged between adjacent sub-pixels among the plurality of sub-pixels in a direction passing through the at least one sub-pixel, and the repair line partially overlaps the pixel electrode; Wherein, the at least one sub-pixel further includes: a data line arranged to overlap at least a portion of the at least one sub-pixel in a direction from the first sub-pixel electrode to the second sub-pixel electrode, The repair line is arranged on one side of the at least one sub-pixel in a direction parallel to the data line. At least a portion of the repair line is arranged to overlap with at least a portion of the connection electrode structure or to cross the connection electrode structure, and The repair line extends in a direction of an adjacent sub-pixel adjacent to the at least one sub-pixel in a direction of the data line.

Images