A photolithography system and a photolithography method

Abstract

The present invention relates to the technical field of photolithography machines, and in particular to a photolithography machine system and a photolithography method. The photolithography machine system includes a light source module capable of emitting at least two energy beams; an energy beam adjustment module for adjusting the wavelength and energy of the energy beam; an optical component module for collinearly combining and focusing the energy beams to form a Bessel beam; a four-wave mixing light emission module for providing four-wave mixing blue light, which can be collinearly combined and focused with the Bessel beam to form a short-wave energy beam; and a motion component module including a sample stage and an intelligent manipulator, wherein the sample stage is configured to be capable of position movement, and the intelligent manipulator is configured to adjust the position of a sample to be engraved on the sample stage. The system can achieve infinite reduction of the line width of the photolithography beam, and the beam can be reduced to 5nm, 3nm, 2nm, or even lower, thereby improving the photolithography accuracy while reducing power consumption.

Description

Technical Field

[0001] The present invention relates to the technical field of photolithography machines, and in particular to a photolithography machine system and a photolithography method. Background Art

[0002] The most advanced lithography technology currently available on the market is extreme ultraviolet (EUV) lithography, which typically uses a 13.5nm EUV light source for short-pulse lithography. Combining EUV lithography with etching processes can reduce chip thickness to 5nm, and even further improve the 5nm process to 3nm by combining etching technology. This currently used technology is based on the Abbe imaging diffraction limit, which utilizes Rayleigh optical modulation technology after the interaction between light and matter. This traditional technology has its own limitations and places very high demands on the light source and the energy of the operating wavelength beam. Summary of the Invention

[0003] The present invention provides a photolithography machine system and a photolithography method, which are used to solve the problem in the prior art that a photolithography beam is limited after being adjusted to a certain threshold.

[0004] In order to solve the above problems, in a first aspect, the present invention provides a lithography system, the system comprising:

[0005] a light source module, wherein the light source module is capable of emitting at least two energy beams;

[0006] an energy beam adjustment module, the energy beam adjustment module being used to adjust the wavelength and energy of the energy beam;

[0007] An optical component module, the optical component module comprising at least two concave mirrors and at least one focusing mirror, the optical component module being used to collinearly align and focus the energy beam to form a Bessel beam;

[0008] A four-wave mixing optical emission module, wherein the four-wave mixing optical emission module is used to provide four-wave mixing blue light, and the four-wave mixing blue light and the Bessel beam are collinearly aligned and focused to form a short-wave energy beam;

[0009] A motion component module includes a sample stage and an intelligent manipulator. The sample stage is configured to be capable of position movement, and the intelligent manipulator is used to adjust the position of the sample to be engraved on the sample stage.

[0010] According to the first aspect, in a preferred embodiment, the light source module includes a single-band light source, a continuous-band light source, and a partial-band light source, and the energy beam includes a basic enabling beam and a photolithography beam.

[0011] According to the first aspect, in a preferred embodiment, the energy beam adjustment module includes a filter and a beam splitter.

[0012] According to the first aspect, in a preferred embodiment, the optical component module includes three concave mirrors and one focusing mirror, and the three concave mirrors can form a reflective light path, and the reflective light path can concentrate the short-wave energy beam on the focusing mirror, and the focusing mirror is used to focus the short-wave energy beam on the sample stage.

[0013] According to the first aspect, in a preferred embodiment, the lithography system further includes a positioning feedback module, which includes a laser and broadband light feedback device, and the laser and broadband light feedback device is used to position and feedback the position of the sample stage.

[0014] According to the first aspect, in a preferred embodiment, the lithography machine system also includes a terminal control center, which is the main control unit of the lithography machine system, capable of controlling the movement of the internal components of the optical component module, and capable of forming a reflective light path for collinear alignment and focusing of the energy light beam.

[0015] According to the first aspect, in a preferred embodiment, the four-wave mixing optical emission module includes a spherical or cylindrical four-wave mixing blue light emitting element.

[0016] In a second aspect, the present invention further provides a lithography method applied to the above-mentioned lithography system, the method comprising:

[0017] The excitation light source module generates an energy beam, wherein the energy beam includes a basic energizing beam and a photolithography beam;

[0018] Adjusting the energy and wavelength of the energy beam, adjusting the basic energizing beam and the photolithography beam to wavelengths required for photolithography, and reducing the energy of the basic energizing beam;

[0019] Combining the energy beams, guiding the adjusted basic energizing beam and the photolithography beam into an optical component module for collinear alignment and focusing, and forming a Bessel beam;

[0020] Performing short-wavelength processing on the Bessel beam guided into the optical component module, and using a spherical or cylindrical secondary four-wave mixing blue light emitting element to emit four-wave mixing blue light to combine with the Bessel beam to form a short-wavelength energy beam;

[0021] The movement of the sample stage is controlled, and the short-wave energy beam is used to perform photolithography on the sample to be etched.

[0022] According to the second aspect, in a preferred implementation method, after merging the energy beams, guiding the adjusted basic enabling beam and the photolithography beam into the optical component module for colinear alignment and focusing, and forming a Bessel beam, the method also includes gradually enhancing the energy intensity of the basic enabling beam, and after the basic enabling beam reaches the photolithography threshold, enhancing the energy intensity of the photolithography beam.

[0023] According to the second aspect, in a preferred implementation method, before controlling the movement of the sample stage and using the short-wave energy light beam to perform photolithography on the sample to be engraved, the method also includes adjusting feedback, focusing the light path formed by the optical component module on the sample stage, and setting the movement frequency of the sample stage.

[0024] The beneficial effects of the present invention are as follows: the present invention proposes a lithography machine system, comprising a light source module, an energy beam adjustment module, an optical component module, a four-wave mixing light emission module and a motion component module, wherein more than two energy beams are excited by the light source module, and the generated energy beams are further adjusted to the required wavelength length by the energy beam adjustment module, and the different energy beams are collinearly combined and focused to form a Bessel beam by the optical component module, while the four-wave mixing blue light emitted by the four-wave mixing light emission module is collinearly combined and focused with the Bessel beam to form a short-wave energy beam, and the lithography action of the sample to be engraved can be realized by moving the sample to be engraved by the motion component module, and in this process, the line width of the short-wave energy beam can be infinitely reduced, and the short-wave energy beam can be reduced to 5nm, 3nm and 2nm or even lower, thereby improving the lithography accuracy while reducing the operating power consumption. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0026] Figure 1 The internal structure diagram of the lithography system is shown;

[0027] Figure 2 A schematic diagram showing the working principle of a lithography system is shown;

[0028] Figure 3 A schematic flow chart of the steps of the photolithography method is shown;

[0029] Figure 4 A schematic flow chart of another preferred photolithography method is shown;

[0030] Figure 5 A schematic flow chart of the steps of another preferred photolithography method is shown.

[0031] Important component identification instructions:

[0032] 10-photolithography system; 11-light source module; 12-energy beam adjustment module; 13-optical component module; 130-concave mirror; 131-focusing mirror; 14-four-wave mixing light emission module; 15-motion component module; 150-sample stage; 16-positioning feedback module. DETAILED DESCRIPTION

[0033] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0034] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0035] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature identified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

[0036] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0037] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0038] See also Figure 1 and Figure 2 The present invention provides a photolithography system 10, which includes a light source module 11, an energy beam adjustment module 12, an optical component module 13, a four-wave mixing light emission module 14 and a motion component module 15. The light source module 11 can emit more than two energy beams. After the emission of the excitation energy beam, the wavelength of these energy beams can be adjusted to the required wavelength length through the energy beam adjustment module 12, while reducing the energy intensity of the energy beam. The optical component module 13 is further used to collinearly combine and focus the energy beams to form a Bessel beam, and the Bessel beam is focused onto a sample to be engraved. At this time, the four-wave mixing light emission module 14 is used to emit four-wave mixing blue light. After the four-wave mixing blue light and the Bessel beam are collinearly combined and focused, a short-wave energy beam can be generated. The motion component module 15 is further used to drive the sample to be engraved to move to realize the photolithography process.

[0039] Specifically, the excitation light source module 11 can emit at least two different energy beams, wherein the emitted energy beams include a basic enabling beam and a lithography beam. The wavelength and energy of the basic enabling beam and the lithography beam are adjusted by the energy beam adjustment module 12 to adjust them to the wavelength length required for the lithography operation. They are further collinearly aligned and focused by the optical component module 13 to form a Bessel beam, further compressing the line width of the beam. The optical component module 13 includes at least two concave mirrors 130 and at least one focusing mirror 131. The concave mirror 130 can collinearly align and focus the energy beam to form a Bessel beam, and the focusing mirror 131 can focus the Bessel beam onto the sample to be engraved.

[0040] The four-wave mixing (FWM) optical emission module 14 is used to emit four-wave mixing (FWM) blue light. The four-wave mixing (FWM) blue light is combined with the Bessel beam to form a short-wave energy beam. The short-wave energy beam is the beam ultimately used for photolithography and is used to perform photolithography on the sample to be etched. By combining the four-wave mixing (FWM) blue light, the Bessel beam can be further compressed. The four-wave mixing (FWM) blue light is used to generate a new high-energy short-wave emission wavelength, which is affected by the original Bessel beam, thereby forming a higher energy density and stable directionality. The technology of combining four-wave mixing (FWM) blue-shifted light with the Bessel beam can perform photolithography with a shorter wavelength.

[0041] At the same time, the motion component module 150 adjusts the motion position between the sample to be engraved and the various components in the optical component module 13, which can effectively improve the overall coordination of the lithography machine system 10. The motion component module 15 includes an intelligent manipulator and a sample stage 150. The sample stage 150 is used to carry the sample to be engraved, and the intelligent manipulator is used to adjust the position of the sample to be engraved on the sample stage 150.

[0042] The lithography system 10 can infinitely reduce the width of the short-wave energy beam used for lithography operations to 5nm, 3nm, 2nm or even lower. While improving the lithography accuracy of the lithography system 10, it also effectively reduces lithography power consumption.

[0043] Please continue reading Figure 1 As an implementation method of the present invention, preferably, the light source module 11 includes a single-band light source, a continuous-band light source and a partial-band light source, through which a basic enabling beam and a photolithography beam can be emitted. The basic enabling beam can adjust the photolithography critical value of the sample to be engraved, and the photolithography beam is used for photolithography operations.

[0044] Preferably, the energy beam adjustment module 12 includes a filter and a beam splitter, which can weaken the energy of the basic enabling beam and adjust the basic enabling beam and the photolithography beam to the wavelength length required for the photolithography operation.

[0045] Preferably, the four-wave mixing optical emission module 14 includes a spherical or cylindrical four-wave mixing blue light emitting element, which can emit four-wave mixing blue light. The four-wave mixing blue light can be combined with the Bessel beam to form a short-wave energy beam.

[0046] See also Figure 2Preferably, the optical component module 13 includes three concave mirrors 130 and a focusing mirror 131. The three concave mirrors 130 form a reflective light path that can collinearly align and focus the energy beam. The reflective light path can reflect the energy beam to the focusing mirror 131. At the same time, the focusing mirror 131 focuses the Bessel beam formed by the collinear aligning and focused energy beam onto the sample to be engraved. This step can shorten the wavelength of the energy beam.

[0047] The line width of the lithography machine can be adjusted as needed. By dynamically controlling the optical component module 13, the beam line width can be adjusted to achieve the current optical line width of 5nm, 3nm, and below 2nm or even smaller. This can make the transistor size smaller and reduce power consumption to a lower level.

[0048] Theoretically, this lithography system 10 is not subject to the limitations of Moore's Law. As long as the wavelength is controlled small enough and lithography can be implemented, the width of the processed lines can be infinitely reduced. If the materials and processes meet the requirements, the line width of the light beam can be reduced to the angstrom, picometer or even femtometer scale.

[0049] See also Figure 1 As another implementation of the present invention, preferably, the lithography machine system 10 also includes a positioning feedback module 16, which includes a laser and broadband light feedback device. The laser and broadband light feedback device is used to position and feedback the position of the sample stage 150, and can accurately and intelligently control the sample 150, greatly improving the operating accuracy of the lithography machine system 10.

[0050] Specifically, the laser and broadband light feedback device can emit laser beams and broadband light beams, and of course can also be used in conjunction with infrared beams for joint monitoring, to jointly monitor and feedback the line width of the energy beam emitted by the light source module 11, and at the same time monitor and feedback the line width of the adjusted energy beam, the integrated Bessel beam and the synthesized short-wave energy beam, so that the background control center can accurately adjust the capacity and line width of the beam, and then make synchronous adjustments to the optical components and the sample stage 150, effectively ensuring the accuracy of the lithography machine system.

[0051] As another implementation of the present invention, preferably, the lithography machine system 10 also includes a terminal control center, which is the main control unit of the lithography machine system, and can control the movement of the internal components of the optical component module 13, and can form a reflective light path for collinear axis and focusing of the energy beam. The terminal control center also controls the various moving parts in the light source module 11, the energy beam adjustment module 12, and the motion component module 15, so that the various modules can coordinate operations.

[0052] See also Figure 3Based on the above-mentioned lithography system 10, the present invention further proposes a lithography method, which includes:

[0053] Step S100, the excitation light source module 11 generates an energy beam, and the energy beam includes a basic enabling beam and a photolithography beam; Step S200, the energy and wavelength of the energy beam are adjusted, the basic enabling beam and the photolithography beam are adjusted to the wavelength required for the photolithography operation, and the energy of the basic enabling beam is reduced; Step S300, the energy beams are merged, and the adjusted basic enabling beam and the photolithography beam are guided into the optical component module for collinear alignment and focusing, and can form a Bessel beam; Step S400, the Bessel beam guided into the optical component module is short-wave processed, and a spherical or cylindrical secondary four-wave mixing blue light emitting element is used to emit four-wave mixing blue light to merge with the Bessel beam to form a short-wave energy beam; Step S500, the sample stage 150 is controlled to move, and the short-wave energy beam is used to perform photolithography on the sample to be engraved.

[0054] Step S100 : The excitation light source module 11 generates an energy beam, wherein the energy beam includes a basic energizing beam and a photolithography beam.

[0055] Specifically, through the above-mentioned lithography machine system 10, the excitation light source module 11 generates at least two energy beams, including a basic enabling beam and a lithography beam. The two energy beams can be generated by the same light source or by multiple light sources. The lithography beam is mainly used for lithography actions, and the basic enabling beam is used to adjust the energy amplitude of the lithography beam. The cooperation of the two beams greatly improves the precision and accuracy of the lithography action.

[0056] Step S200 , adjusting the energy and wavelength of the energy beam, adjusting the basic enabling beam and the photolithography beam to wavelengths required for photolithography, and reducing the energy of the basic enabling beam.

[0057] Specifically, after generating two energy beams, the wavelength and energy of the energy beams are adjusted by the energy beam adjustment module. First, the basic enabling beam and the lithography beam are adjusted to the wavelength required for lithography, and the energy of the basic enabling beam is further reduced.

[0058] Step S300: merging the energy beams, guiding the adjusted basic energizing beam and the photolithography beam into an optical component module for collinear alignment and focusing, and forming a Bessel beam.

[0059] Specifically, after the energy and wavelength of the basic enabling beam and the photolithography beam are adjusted, the concave mirror 130 and the focusing mirror 131 in the optical component module are further set to a state where the energy beams can be collinearly aligned and focused. When the energy beams are collinearly aligned and focused, they can form a reflected light path to constrain the energy beams, and the generated Bessel beam, the reflected light path can guide the Bessel beam to the focusing mirror 131, and the focusing mirror 131 further focuses the Bessel beam on the sample stage 150, and focuses a photolithography point on the sample stage 150.

[0060] Step S400: short-wavelength processing is performed on the Bessel beam guided into the optical component module, and a spherical or cylindrical secondary four-wave mixing blue light emitting element is used to emit four-wave mixing blue light to combine with the Bessel beam to form a short-wavelength energy beam.

[0061] Specifically, the four-wave mixing blue light element in the four-wave mixing optical emission module 14 is used to excite the four-wave mixing blue light, and the excited four-wave mixing blue light is aggregated with the above-mentioned Bessel beam. After aggregation, a short-wave energy beam can be formed. The short-wave energy beam is composed of a basic enabling beam, a photolithography beam and four-wave mixing blue light. The four-wave mixing blue light is used to generate a new high-energy short-wave emission wavelength, which is affected by the original Bessel beam and can form a higher energy density and stable directionality. At the same time, after the short-wave energy beam passes through a focusing lens to focus a photolithography point on the sample to be engraved, this step can compress the photolithography beam while increasing the energy value of the photolithography beam.

[0062] Furthermore, the power and energy intensity of the basic enabling beam are increased so that it reaches or approaches the critical lithography threshold at the lithography point on the sample interface, and the power intensity of the lithography beam is further increased to enable lithography operations to be performed on the sample to be etched.

[0063] At this time, the four-wave mixing blue shift technology is used to generate a new high-energy short-wave emission wavelength, which is affected by the original Bessel beam, thereby forming a higher energy density and stable directionality. Before the sample to be engraved is photolithographically processed, a spherical or cylindrical four-wave mixing blue light emitting element is used to form a new four-wave mixing short-wave wavelength. The effect of four-wave mixing emission light has been verified by relevant experiments. After the energy beam and the four-wave mixing blue light are collinearly mixed, a short-wave energy beam with a shorter wavelength and better light directionality can be generated. At this time, when the short-wave energy beam is used for photolithography, the photolithography scale theoretically does not have a small scale. As long as the wavelength is short enough and the energy is large enough, the photolithography line width can be infinitely compressed, effectively overcoming the limitations of the Abbe imaging principle in traditional photolithography technology.

[0064] Step S500 , controlling the movement of the sample stage 150 , and performing a photolithography operation on the sample to be etched using the short-wave energy beam.

[0065] Specifically, after adjusting the shortwave energy beam, the shortwave energy beam can form a photolithography point on the sample to be engraved 150. At this time, the sample to be engraved is fixed on the sample stage. By controlling the movement of the sample stage, the shortwave energy beam can perform photolithography on the sample to be engraved.

[0066] See also Figure 4 As a preferred implementation method of the present invention, after step S300, it also includes step S310, gradually increasing the energy intensity of the basic enabling beam, and after the basic enabling beam reaches the lithography threshold, further increasing the energy of the lithography beam.

[0067] Specifically, after the basic energizing beam and the photolithography beam are collinear and parallel, the energy intensity of the basic energizing beam is gradually enhanced so that when it is focused on the sample 150 to be etched, the energy intensity reaches or approaches the photolithography threshold.

[0068] See also Figure 5 As a preferred implementation method of the present invention, before step S500, the method also includes step S410, adjusting feedback, focusing the light path formed by the optical component module 13 on the sample stage 150, and setting the movement frequency and route of the sample stage 150.

[0069] Specifically, the laser and broadband light feedback device in the positioning feedback module 16 monitor and feedback the specific position of the sample stage 150 or the sample to be engraved. Furthermore, the terminal control center in the lithography machine system 10 controls the position movement of the sample stage, thereby realizing precise lithography operation of the sample to be engraved under the short-wave energy beam, effectively improving the accuracy of the lithography operation.

[0070] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0071] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A lithography system, characterized in that: include: A light source module, wherein the light source module is capable of emitting at least two energy beams, including a single-band light source, a continuous-band light source, and a partial-band light source, and the energy beams include a basic energizing beam and a photolithography beam; An energy beam adjustment module, the energy beam adjustment module is used to adjust the wavelength and energy of the energy beam, the energy beam adjustment module includes a filter and a beam splitter; An optical component module, the optical component module comprising at least two concave mirrors and at least one focusing mirror, the optical component module being used to collinearly align and focus the energy beam to form a Bessel beam; A four-wave mixing optical emission module, the four-wave mixing optical emission module is used to provide four-wave mixing blue light, the four-wave mixing blue light and the Bessel beam are collinearly aligned and focused to form a short-wave energy beam, and the four-wave mixing optical emission module includes a spherical or cylindrical four-wave mixing blue light emitting element; A motion component module, the motion component module includes a sample stage and an intelligent manipulator, the sample stage is configured to be movable, and the intelligent manipulator is used to adjust the position of the sample to be engraved on the sample stage; A positioning feedback module, comprising a laser and broadband light feedback device, wherein the laser and broadband light feedback device are used to locate and provide feedback on the position of the sample stage; The terminal control center is the main control unit of the lithography machine system, which can control the movement of the internal components of the optical component module and form a reflective light path for collinear alignment and focusing of the energy light beam.

2. The lithography system according to claim 1, characterized in that: The optical component module includes three concave mirrors and one focusing mirror, and the three concave mirrors can form a reflective light path.

3. A photolithography method, applied to the photolithography system according to any one of claims 1 to 2, characterized in that: include: The excitation light source module generates an energy beam, wherein the energy beam includes a basic energizing beam and a photolithography beam; Adjusting the energy and wavelength of the energy beam, adjusting the basic energizing beam and the photolithography beam to wavelengths required for photolithography, and reducing the energy of the basic energizing beam; Combining the energy beams, guiding the adjusted basic energizing beam and the photolithography beam into an optical component module for collinear alignment and focusing, and forming a Bessel beam; Performing short-wavelength processing on the Bessel beam guided into the optical component module, and using a spherical or cylindrical secondary four-wave mixing blue light emitting element to emit four-wave mixing blue light to combine with the Bessel beam to form a short-wavelength energy beam; The movement of the sample stage is controlled, and the short-wave energy beam is used to perform photolithography on the sample to be etched.

4. The photolithography method according to claim 3, wherein: After merging the energy beams, guiding the adjusted basic enabling beam and the photolithography beam into the optical component module for co-axial alignment and focusing, and forming a Bessel beam, the method also includes gradually increasing the energy intensity of the basic enabling beam, and after the basic enabling beam reaches the photolithography threshold, increasing the energy intensity of the photolithography beam.

5. The photolithography method according to claim 3, wherein: Before controlling the movement of the sample stage and performing photolithography on the sample to be etched using the short-wave energy beam, the method further includes adjusting feedback to focus the light path formed by the optical component module on the sample stage and setting the movement frequency of the sample stage.

Images