Method for producing microwires or nanowires

By controlling the gas flow ratio and temperature in the vapor phase epitaxy process, the metal-organic vapor phase epitaxy method is used to manufacture III-V compound microwires/nanowires, solving the density and uniformity problems in the existing technology, and realizing the manufacturing of high-density, single-crystal nanowires/microwires, which is suitable for low-cost industrial-scale production.

CN114127891BActive Publication Date: 2026-02-10ALEDIA INC
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Patent Information

Application Number
CN202080047265.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-06-28
Filing Date
2020-06-26
Publication Date
2026-02-10
Estimated Expiration
2040-06-26

AI Technical Summary

Technical Problem

Existing technologies struggle to fabricate III-V compound microwires/nanowires with high density and uniformity on supports, especially group V element polar microwires/nanowires, and the crystal structure control is poor.

Method used

Using a metal-organic vapor phase epitaxy method, III-V compound microwires/nanowires are formed by controlling the gas flow ratio and temperature, ensuring that each microwire/nanowire has the polarity of a group V element or a group III element, and achieving a single crystal structure by controlling the dopant concentration.

Benefits of technology

It enables the fabrication of high-density (greater than 10%) and highly uniform III-V compound microwires/nanowires, ensuring precise control over the single-crystal structure, position, and geometry of each microwire/nanowire, suitable for low-cost industrial-scale production.

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Abstract

The present description relates to a method of manufacturing a device comprising micrometer or nanometer sized wires (22) containing a III-V compound, the method comprising, for each wire, forming at least a portion (24) of the wire by a step of metal-organic vapor phase epitaxy, the step of metal-organic vapor phase epitaxy comprising: injecting into a reactor a first precursor gas of a group V element, a second precursor gas of a group III element and a third precursor gas of an additional element being a dopant of the III-V compound, the third precursor gas of the additional element in the gas providing a dopant concentration in the portion of the wire of more than 5.10 19 atoms / cm 3 , for example more than 1.10 20 atoms / cm 3 .
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Citation Information

Patent Citations

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    CN105593999A

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    TW201841226A

  • Nanoelectronic structure and method of producing such

    WO2008079077A2