A three-dimensional packaged silicon carbide power module and a manufacturing method thereof

Abstract

The application discloses a three-dimensional packaged silicon carbide power module and a manufacturing method thereof. The three-dimensional packaged silicon carbide power module comprises a silicon carbide substrate, a plurality of first Tesla valve channels are arranged in the silicon carbide substrate, a gold electrode array connected with a dielectrophoresis electrode circuit is arranged at the bottom of the first Tesla valve channel, the gold electrode array at the entrance of the arc-shaped side flow channel of the positive first Tesla valve channel is connected with low-frequency phase-shifted alternating current to generate a traveling wave electroosmotic flow, the gold electrode array at the corner and the outlet of the arc-shaped side flow channel is connected with high-frequency phase-shifted alternating current to generate a traveling wave dielectrophoresis. After the gold electrode array is connected with the phase-shifted alternating voltage signal, an ordered traveling wave form nonlinear alternating electric field is formed in the arc-shaped side flow channel, the gas-liquid two-phase non-uniform polarization is subjected to a net electric field force which is not 0, the gas-liquid surface tension relaxation process is changed, the bubble desorption is promoted, the boiling bubbles in the high-curvature arc-shaped side flow channel are orderly removed, and the two-phase heat dissipation efficiency and stability of the Tesla valve structure are enhanced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a three-dimensional packaging silicon carbide power module embedded with Tesla valve or having Tesla valve channel and a manufacturing method thereof. BACKGROUND

[0002] High power devices are mainly used to handle the frequency conversion, voltage conversion, current conversion, power management and other actions in the circuit. Typical power devices include super power thyristor, electron injection enhanced gate transistor, silicon carbide power device, etc. The high temperature resistance, high voltage resistance and high frequency characteristics of silicon carbide devices can realize the power density improvement, efficiency improvement and cost reduction of high power modules. Due to the small size, light weight, ultra-low inductance electrical interconnection and many other advantages of three-dimensional packaging, three-dimensional packaging of high power devices is an effective means to further improve the miniaturization, high frequency and integration of silicon carbide power modules.

[0003] With the continuous improvement of the power density of silicon carbide power modules, the local heat flux density is rapidly increased to kW / cm 2 order of magnitude. How to ensure the effective heat dissipation of the device while realizing the uniform temperature environment (±5℃) of the integrated device has become a bottleneck problem that needs to be solved. Integrating an embedded liquid cooling heat dissipation structure in the three-dimensional packaging of high power devices has become one of the main ways to solve the above problems. Compared with micro-jet, thin film evaporation, planar heat pipe and other two-phase heat dissipation technologies, flow boiling technology can realize different enhanced heat transfer mode operations such as single-phase flow, two-phase flow and multi-phase flow in a closed space of hundreds of microns, and is easy to be compatible with micro-nano processing technology, and has become one of the most potential solutions for high power device heat dissipation.

[0004] Due to the high heat flux, the gas-liquid interface of microscale two-phase flow is disturbed by the boiling process, and the accumulation of boiling bubbles easily causes the drying of the solid-liquid heat transfer interface, leading to flow instability, reverse flow, and further deterioration of heat transfer stability. There is currently no direct and effective active control means to induce the development of the gas-liquid interface, which hinders the promotion and application of the embedded micro-flow phase change heat dissipation technology in the field of high power device packaging. SUMMARY

[0005] Therefore, the present application provides a three-dimensional packaging silicon carbide power module embedded with Tesla valve or having Tesla valve channel and a manufacturing method thereof, to greatly improve the performance of the embedded two-phase heat transfer in the three-dimensional packaging of high power devices.

[0006] In order to achieve the above purpose, the present application provides the following technical solutions:

[0007] The first aspect of the present application provides a three-dimensional packaging silicon carbide power module, comprising a silicon carbide substrate, a plurality of first Tesla valve channels are arranged in the silicon carbide substrate, a gold electrode array connected to a dielectrophoresis electrode circuit is arranged at the bottom of the first Tesla valve channel, low-frequency phase-shifted alternating current is applied to the gold electrode array at the entrance of the arc-shaped side flow channel of the first Tesla valve channel to generate a traveling wave electroosmotic flow, and high-frequency phase-shifted alternating current is applied to the gold electrode array at the corner and outlet of the arc-shaped side flow channel to generate a traveling wave dielectrophoresis.

[0008] Further, the silicon carbide substrate comprises a first substrate and a second substrate, a plurality of grooves in the form of corresponding Tesla valve channels are etched on the lower side of the first substrate and the upper side of the second substrate, and the first substrate and the second substrate are bonded by a plasma low-temperature process to form the first Tesla valve channels by the grooves of the two.

[0009] Further, the surface of the gold electrode is coated with insulating photoresist.

[0010] Further, the first Tesla valve channels are all multi-stage Tesla valve channels, and the plurality of first Tesla valve channels are arranged in parallel and alternately in forward and reverse directions.

[0011] Further, the three-dimensional packaging silicon carbide power module further comprises a diamond copper cold plate, a plurality of multi-stage second Tesla valve channels are arranged in the diamond copper cold plate, the plurality of second Tesla valve channels are arranged in parallel and alternately in forward and reverse directions, the diamond copper cold plate is fixed below the silicon carbide substrate, and the first Tesla valve channels and the second Tesla valve channels are connected in communication.

[0012] Further, the diamond copper cold plate comprises a first cold plate and a second cold plate, a copper layer on the lower side of the first cold plate and a copper layer on the upper side of the second cold plate are both processed with a plurality of corresponding copper grooves in the form of Tesla valve channels, and the first cold plate and the second cold plate are fixed by welding and the copper grooves of the two form the second Tesla valve channels.

[0013] Further, the arc of the side flow channel of the Tesla valve channel is 80°, and the arc outer radius is 1.1 mm; four first Tesla valve channels are arranged in the silicon carbide substrate, and eight second Tesla valve channels are arranged in the diamond copper cold plate.

[0014] Further, the three-dimensional packaging silicon carbide power module further comprises a copper gasket and a power device, the copper gasket is fixed on the silicon carbide substrate, and the power device is fixed on the copper gasket.

[0015] The second aspect of the present application provides a manufacturing method of a three-dimensional packaging silicon carbide power module, which is used to manufacture the three-dimensional packaging silicon carbide power module of the first aspect of the present application, and comprises the following steps:

[0016] Step S1, making a silicon carbide substrate containing a plurality of first Tesla valve channels, setting a gold electrode array connected to a dielectrophoresis electrode circuit at the groove bottom of the first Tesla valve channel, wherein the gold electrode array at the inlet of the arc-shaped side flow channel of the positive first Tesla valve channel is connected to low-frequency phase-shift alternating current, and the gold electrode array at the corner and outlet of the arc-shaped side flow channel is connected to high-frequency phase-shift alternating current;

[0017] Step S2, making a diamond copper cold plate containing a plurality of second Tesla valve channels;

[0018] Step S3, fixing a copper gasket on the silicon carbide substrate, fixing a power device on the copper gasket, and fixing the diamond copper cold plate under the silicon carbide substrate.

[0019] Further,

[0020] Step S1 includes the following steps:

[0021] Step S11, etching a plurality of grooves in the form of Tesla valve channels on the lower side of the first substrate and the upper side of the second substrate;

[0022] Step S12, depositing gold electrodes on the groove bottom to form a gold electrode array;

[0023] Step S13, coating the surface of the gold electrode with insulating photoresist;

[0024] Step S14, laser drilling to form liquid inlet and outlet;

[0025] Step S15, aligning the first substrate and the second substrate, including edge alignment and groove alignment;

[0026] Step S16, using plasma low-temperature process to activate silicon carbide-silicon carbide to directly bond the first substrate and the second substrate, and to seal the grooves to form first Tesla valve channels, thereby forming a silicon carbide substrate containing a plurality of first Tesla valve channels;

[0027] Step S2 includes the following steps:

[0028] Step S21, milling a plurality of copper grooves in the form of Tesla valve channels on the copper layer on the lower side of the first cold plate and the copper layer on the upper side of the second cold plate;

[0029] Step S22, laser drilling to form liquid inlet and outlet;

[0030] Step S23, aligning the first cold plate and the second cold plate, including edge alignment and copper groove alignment;

[0031] Step S24, using copper-tin solder to fixedly connect the first cold plate and the second cold plate, and to seal the copper grooves to form second Tesla valve channels, thereby forming a diamond copper cold plate containing a plurality of second Tesla valve channels.

[0032] Wherein, the order of steps S1 and S2 can be reversed or performed simultaneously;

[0033] Step S3 comprises the following steps:

[0034] Step S31, plating copper on the upper and lower sides of the silicon carbide substrate;

[0035] Step S32, fixing the copper gasket on the copper plating layer on the upper side of the silicon carbide substrate through nano-silver sintering;

[0036] Step S33, fixing the power device on the copper gasket through nano-silver sintering;

[0037] Step S34, welding and fixing the diamond copper cold plate under the copper plating layer on the lower side of the silicon carbide substrate;

[0038] Wherein, step S34 can be located before step S32.

[0039] The present application has the following advantages:

[0040] By integrating the traveling wave dielectrophoresis gold electrode array at the bottom of the arc-shaped side flow channel groove of the first Tesla valve, using a phase-shifted alternating voltage signal, an ordered traveling wave form nonlinear alternating electric field is formed in the high-curvature heat dissipation flow channel, the gas-liquid two-phase is unevenly polarized and subjected to electric field force net force, that is, traveling wave dielectrophoresis force, which changes the surface tension relaxation process of the gas-liquid, promotes bubble detachment, and realizes the ordered removal of boiling bubbles in the arc-shaped high-curvature side flow channel of the Tesla valve, thereby enhancing the two-phase heat dissipation efficiency and stability of the Tesla valve structure. After the traveling wave dielectrophoresis gold electrode array integrated in the arc-shaped side flow channel of the Tesla valve is actively regulated, the nonlinear alternating electric field formed causes the surface tension relaxation of the polarized boiling gas-liquid phase interface, reduces the disturbance of the gas-liquid phase during boiling, and obtains a more stable and efficient gas-liquid phase heat transfer interface. According to simulation estimation, the heat transfer coefficient of the embedded three-dimensional Tesla valve structure (32.7kW / (m 2 ·K)@1.6kW / cm 2 , 1.6m / s) can be stably improved by 10%. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed in the following embodiment or prior art description will be briefly introduced. Obviously, the drawings in the following description are only exemplary, and those skilled in the art can also obtain other implementation drawings according to the provided drawings without creative labor.

[0042] The structures, proportions, sizes, etc. shown in the specification are merely used to cooperate with the content disclosed in the specification for the skilled person to understand and read, and are not used to limit the defined conditions that can be implemented by the present application, so they do not have technical significance. Any modification of the structure, change of the proportion relationship or adjustment of the size, without affecting the effect and purpose that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application.

[0043] Fig. 1 A three-dimensional exploded view of a three-dimensional packaged silicon carbide power module is provided for an embodiment of the present application;

[0044] Fig. 2 A structural schematic diagram of a three-dimensional packaged silicon carbide power module is provided for an embodiment of the present application;

[0045] Fig. 3 A structural schematic diagram of a three-dimensional packaged silicon carbide power module is provided for an embodiment of the present application;

[0046] Fig. 4 A planar structural diagram of the first or second substrate of a three-dimensional packaged silicon carbide power module is provided for an embodiment of the present application;

[0047] Fig. 5 A three-dimensional structural diagram of the first or second cold plate of a three-dimensional packaged silicon carbide power module is provided for an embodiment of the present application;

[0048] Fig. 6 A positional relationship diagram of a copper gasket, a power device and a first substrate of a three-dimensional packaged silicon carbide power module is provided for an embodiment of the present application.

[0049] In the figure: 1 - first substrate, 2 - second substrate, 3 - first cold plate, 4 - second cold plate, 5 - copper gasket, 6 - power device, 7 - gold electrode, 8 - insulating photoresist, 9 - first Tesla valve channel, 10 - second Tesla valve channel. DETAILED DESCRIPTION

[0050] The embodiments of the present application are described below by specific embodiments, and the skilled person can easily understand other advantages and effects of the present application from the content disclosed in the specification. Obviously, the described embodiments are part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of the present application.

[0051] The terms such as "upper", "lower", "left", "right", "middle" and the like cited in the specification are merely for the convenience of description and are not intended to limit the scope of the application. Changes or adjustments in the relative relationship without substantial changes in the technical content are also considered as the scope of the application.

[0052] As shown in Figs. 1 to 6 The embodiment provides a three-dimensional packaged silicon carbide power module, mainly composed of a silicon carbide substrate, a diamond copper cold plate (diamond copper plated plate) and a power device 6. The silicon carbide substrate is divided into a first substrate 1 and a second substrate 2 arranged one above the other. The diamond copper cold plate is divided into a first cold plate 3 and a second cold plate 4 arranged one above the other.

[0053] A groove in the form of a corresponding Tesla valve channel with a depth of 0.08 mm is etched on the lower side of the first substrate 1 and the upper side of the second substrate 2 by neutral loop discharge plasma etching. "Corresponding" means that after the bonding of the two substrates, the grooves are engaged to form a Tesla valve channel. The first substrate 1 and the second substrate 2 are bonded by plasma low-temperature process to form a silicon carbide substrate. The bonding seals the gap of the groove butt joint of the first substrate 1 and the second substrate 2, thereby forming a first Tesla valve channel 9 in the silicon carbide substrate. The groove bottom of the first Tesla valve channel 9 is deposited with a gold electrode 7 (in the form of an array, single root 400 μm x 10 μm x 0.05 μm, 120 roots x 2 layers) by a stripping process, mainly or especially the groove bottom of the arc-shaped side channel (and the entrance and exit thereof). The surface of the gold electrode 7 is coated with 0.2 μm thick SU-8 insulating photoresist 8 to avoid direct contact of the gold electrode 7 with water and prevent electrical breakdown and electrolytic water. The gold electrode 7 is connected to the dielectrophoresis electrode circuit in the prior art. The circuit is connected to the signal layer circuit through the electrical via hole to obtain sinusoidal alternating current. The alternating current can be generated by the existing direct current stabilized power supply after power transformation. The power transformation circuit includes a DC-DC converter, an H-bridge inverter and a filter, which is prior art and will not be described in detail. The array of gold electrodes 7 at the entrance of the arc-shaped side channel of the forward Tesla valve channel is connected to low-frequency phase-shifted alternating current, which can generate traveling wave electroosmosis flow, thereby increasing the liquid flow in the arc-shaped side channel; the array of gold electrodes 7 at the corner and outlet of the arc-shaped side channel is connected to high-frequency phase-shifted alternating current (10-100 KHz) to generate traveling wave dielectrophoresis, so as to promote the detachment of bubbles from the wall surface, regulate the momentum of bubble flow, make the bubbles quickly escape from the arc-shaped side channel, and prevent the accumulation of bubbles in the corner area (dead zone).

[0054] The silicon carbide substrate is provided with an inlet and an outlet, which are connected with the Tesla valve channel respectively, the inlet is used for inputting cooling medium into the embedded Tesla valve, and the outlet is used for outputting the cooling medium from the embedded heat dissipation cavity; the cooling medium is preferably water as two-phase heat dissipation working medium. Compared with FC770, Ra232 and other fluorine-containing refrigerants, water has the characteristics of high thermal conductivity, large latent heat of vaporization, high dielectric constant, etc., is easy to form a polarized gas-liquid phase interface, and its molecular composition is simple, and the molecular dynamics modeling theory is mature.

[0055] A 0.16mm deep copper channel in the form of a corresponding Tesla valve channel is processed on the 2.0mm thick copper layer under the first cold plate 3 and the 2.0mm thick copper layer on the upper side of the second cold plate 4 by a milling process, and the first cold plate 3 and the second cold plate 4 are welded and fixed by copper tin welding, thereby forming a diamond copper cold plate; the contact edge of the copper channel is closed at the same time of welding, so that the copper channels of the two form a second Tesla valve channel 10. The diamond copper cold plate is also provided with an inlet and an outlet, and the diamond copper cold plate is fixed under the silicon carbide substrate, and the first Tesla valve channel 9 and the second Tesla valve channel 10 are connected through the inlet and outlet.

[0056] The three-dimensional Tesla valve two-phase heat dissipation microchannels are constructed in the silicon carbide substrate and the diamond copper cold plate and are connected, the Tesla valve channel adopts a 3D structure of forward and reverse multi-stage interlacing, and the curvature of the Tesla valve side flow channel is preferably 80° and the arc outer radius is 1.1mm in consideration of heat dissipation, temperature uniformity and pressure duality. Four first Tesla valve channels 9 are arranged in the silicon carbide substrate, and eight second Tesla valve channels 10 are arranged in the diamond copper cold plate. The more the number of Tesla valve stages is, the better the heat dissipation effect is, and in the embodiment, the number of Tesla valve stages is 6.

[0057] In the two-phase heat dissipation, although the gas-liquid separation efficiency of the Tesla valve structure can effectively ensure the smoothness of the main flow channel, the boiling bubbles accumulated in the arc-shaped side flow channel of the Tesla valve are an important hidden danger for the instability of the two-phase heat dissipation system; and the first Tesla valve channel 9 is closer to the heat source, and the cross-sectional area thereof is 58% smaller than that of the second Tesla valve channel 10, so the phase change of gas and liquid in the first Tesla valve channel 9 is more intense, and therefore the traveling wave dielectrophoresis array is integrated in the first Tesla valve side flow channel, which can provide protection for the overall stability of the three-dimensional Tesla valve flow channel in the two-phase flow working interval. The traveling wave dielectrophoresis gold electrode 7 array is integrated in the groove bottom of the Tesla valve arc-shaped side flow channel, a traveling wave form nonlinear alternating electric field is generated, and the electroosmotic flow and dielectrophoresis effect drive the liquid flow and bubbles, so as to drive away the bubbles accumulated in the Tesla valve arc-shaped side flow channel, thereby obtaining a more stable gas-liquid phase heat transfer interface.

[0058] The copper pad 5 is fixed on the silicon carbide substrate, and the power device 6 is fixed on the copper pad 5. Specifically, copper is plated on the first substrate 1, then a patterned nano-silver paste layer is screen printed on the copper plating layer, and then the copper pad 5 is sintered on the top of the first substrate 1. The SiC MOSFET power device 6 will be sintered on the copper pad 5, and the cathode of the SiC MOSFET power device 6 will be sintered on the top of the silicon carbide copper pad 5. The anode of the SiC MOSFET is connected to another copper pad 5 through an aluminum ribbon wire, forming a circuit.

[0059] The embodiment also provides a manufacturing method of a three-dimensional packaged silicon carbide power module, including the following steps:

[0060] Step S1, manufacturing a silicon carbide substrate containing a plurality of first Tesla valve channels, and setting a gold electrode array connected to a dielectrophoresis electrode circuit at the bottom of the first Tesla valve channel, wherein the gold electrode array at the entrance of the arc-shaped side flow channel of the positive first Tesla valve channel is connected to low-frequency phase-shift alternating current, and the gold electrode array at the corner and outlet of the arc-shaped side flow channel is connected to high-frequency phase-shift alternating current. Step S1 includes the following steps: Step S11, etching a plurality of grooves in the form of corresponding Tesla valve channels on the lower side of the first substrate and the upper side of the second substrate; Step S12, depositing gold electrodes at the bottom of the groove to form a gold electrode array; Step S13, coating the surface of the gold electrode with insulating photoresist; Step S14, laser drilling to form liquid inlets and outlets; Step S15, aligning the first substrate and the second substrate, including edge alignment and groove alignment; Step S16, using plasma low-temperature technology to activate silicon carbide-silicon carbide to directly bond and fix the first substrate and the second substrate, and to close the groove to form the first Tesla valve channel, thereby forming the silicon carbide substrate containing a plurality of first Tesla valve channels.

[0061] Step S2, manufacturing a diamond copper cold plate containing a plurality of second Tesla valve channels. Step S2 includes the following steps: Step S21, milling a plurality of copper grooves in the form of corresponding Tesla valve channels on the copper layer on the lower side of the first cold plate and the copper layer on the upper side of the second cold plate; Step S22, laser drilling to form liquid inlets and outlets; Step S23, aligning the first cold plate and the second cold plate, including edge alignment and copper groove alignment; Step S24, using copper-tin solder to fixedly connect the first cold plate and the second cold plate, and to close the copper groove to form the second Tesla valve channel, thereby forming the diamond copper cold plate containing a plurality of second Tesla valve channels. The order of steps S1 and S2 can be reversed or performed simultaneously.

[0062] Step S3, fixing the copper pad on the silicon carbide substrate, fixing the power device on the copper pad, and fixing the diamond copper cold plate under the silicon carbide substrate. Step S3 comprises the following steps: Step S31, plating copper on the upper and lower sides of the silicon carbide substrate; Step S32, fixing the copper pad on the copper plating layer on the upper side of the silicon carbide substrate through nano-silver sintering; Step S33, fixing the power device on the copper pad through nano-silver sintering; Step S34, welding and fixing the diamond copper cold plate under the copper plating layer on the lower side of the silicon carbide substrate. Step S34 can also be located before Step S32.

[0063] Although the present application has been described in detail with general description and specific embodiments above, some modifications or improvements can be made on the basis of the present application, which is obvious to those skilled in the art. Therefore, these modifications or improvements made on the basis of not deviating from the spirit of the present application, all belong to the scope of the present application claimed.

Claims

1. A three-dimensional packaged silicon carbide power module, characterized by, The silicon carbide substrate includes a plurality of first Tesla valve channels, a gold electrode array connected to a dielectrophoresis electrode circuit is arranged at the groove bottom of the first Tesla valve channel, low-frequency phase-shift alternating current is applied to the gold electrode array at the entrance of the arc-shaped side flow channel of the forward Tesla valve channel to generate traveling wave electroosmosis, and high-frequency phase-shift alternating current is applied to the gold electrode array at the corner and outlet of the arc-shaped side flow channel to generate traveling wave dielectrophoresis.

2. The three-dimensional packaged silicon carbide power module of claim 1, wherein, The silicon carbide substrate includes a first substrate and a second substrate, a plurality of corresponding recesses in the form of Tesla valve channels are etched on the lower side of the first substrate and the upper side of the second substrate, and the first substrate and the second substrate are bonded by a plasma low-temperature process to form the first Tesla valve channels in the recesses of the two substrates.

3. The three-dimensional packaged silicon carbide power module of claim 1, wherein, The surface of the gold electrode is coated with insulating photoresist.

4. The three-dimensional packaged silicon carbide power module of claim 1, wherein, The first Tesla valve channels are all multi-stage Tesla valve channels, and the plurality of first Tesla valve channels are arranged in parallel and alternately in forward and reverse directions.

5. The three-dimensional packaged silicon carbide power module of claim 1, wherein, The diamond copper cold plate also includes a plurality of multi-stage second Tesla valve channels, and the plurality of second Tesla valve channels are arranged in parallel and alternately in forward and reverse directions; the diamond copper cold plate is fixed below the silicon carbide substrate, and the first Tesla valve channels and the second Tesla valve channels are connected.

6. The three-dimensional packaged silicon carbide power module of claim 5, wherein, The diamond copper cold plate includes a first cold plate and a second cold plate, a copper layer on the lower side of the first cold plate and a copper layer on the upper side of the second cold plate are both processed with a plurality of corresponding copper grooves in the form of Tesla valve channels, and the first cold plate and the second cold plate are fixed by welding and the copper grooves of the two are formed into the second Tesla valve channels.

7. The three-dimensional packaged silicon carbide power module of claim 5, wherein, The arc of the side flow channel of the Tesla valve channel is 80°, and the arc outer radius is 1.1 mm; four first Tesla valve channels are arranged in the silicon carbide substrate, and eight second Tesla valve channels are arranged in the diamond copper cold plate.

8. The three-dimensional packaged silicon carbide power module of claim 1, wherein, The three-dimensional packaged silicon carbide power module also includes a copper gasket and a power device, the copper gasket is fixed on the silicon carbide substrate, and the power device is fixed on the copper gasket.

9. A method of fabricating a three-dimensional packaged silicon carbide power module, the method comprising: The method for manufacturing the three-dimensional packaged silicon carbide power module of any one of claims 1-8 comprises the following steps: Step S1, manufacturing a silicon carbide substrate containing a plurality of first Tesla valve channels, and arranging a gold electrode array connected to a dielectrophoresis electrode circuit at the groove bottom of the first Tesla valve channel, wherein low-frequency phase-shift alternating current is applied to the gold electrode array at the entrance of the arc-shaped side flow channel of the forward Tesla valve channel, and high-frequency phase-shift alternating current is applied to the gold electrode array at the corner and outlet of the arc-shaped side flow channel; Step S2, manufacturing a diamond copper cold plate containing a plurality of second Tesla valve channels; Step S3, fixing a copper gasket on the silicon carbide substrate, fixing a power device on the copper gasket, and fixing a diamond copper cold plate below the silicon carbide substrate.

10. The manufacturing method of the three-dimensional packaged silicon carbide power module according to claim 9, wherein Step S1 comprises the following steps: Step S11, etching a plurality of corresponding recesses in the form of Tesla valve channels on the lower side of the first substrate and the upper side of the second substrate; Step S12, depositing a gold electrode at the groove bottom to form a gold electrode array; Step S13, coating insulating photoresist on the surface of the gold electrode; Step S14, laser drilling to form a liquid inlet and a liquid outlet; Step S15, aligning the first substrate and the second substrate, including edge alignment and recess alignment. Step S16, using plasma low temperature process, activate silicon carbide-silicon carbide to directly bond and fix the first substrate and the second substrate, close the groove to form the first Tesla valve channel, thereby forming the silicon carbide substrate containing multiple first Tesla valve channels; Step S2 includes the following steps: Step S21, milling multiple copper grooves in the form of corresponding Tesla valve channels on the copper layer on the lower side of the first cold plate and the copper layer on the upper side of the second cold plate; Step S22, laser drilling to form the liquid inlet and the liquid outlet; Step S23, aligning the first cold plate and the second cold plate, including edge alignment and copper groove alignment; Step S24, using copper tin solder to weld and fix the first cold plate and the second cold plate, and close the copper groove to form the second Tesla valve channel, thereby forming the diamond copper cold plate containing multiple second Tesla valve channels; Step S3 includes the following steps: Step S31, plating copper on the upper and lower sides of the silicon carbide substrate; Step S32, fixing the copper gasket on the copper layer on the upper side of the silicon carbide substrate by nano-silver sintering; Step S33, fixing the power device on the copper gasket by nano-silver sintering; Step S34, welding and fixing the diamond copper cold plate under the copper layer on the lower side of the silicon carbide substrate.

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