A method of cleaning semiconductor deposition chamber residues

Abstract

The present application relates to the field of semiconductor, specifically relates to a kind of semiconductor deposition cavity residue cleaning method, comprising the following steps: S3: setting deposition cavity cavity pressure 160-200Pa, 400-600sccm of carbon tetrafluoride is input and is ionized;S4: setting deposition cavity cavity pressure 40-60Pa, 400-600sccm of carbon tetrafluoride is input;S5: setting deposition cavity cavity pressure 160-200Pa, 400-600sccm of carbon tetrafluoride is input.The beneficial effects of the present application are that different reaction conditions of carbon tetrafluoride and SiO2 make SiO2 be reacted more fully.Carbon tetrafluoride different flow rate, with different intensity impact SiO2 on inlet hole, can make SiO2 be consumed in different forms;In addition, in the two changes of carbon tetrafluoride flow rate and impact force, form the mutation gas flow of carbon tetrafluoride flow rate mutation, mutation gas flow can make SiO2 be reacted more fully.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing method, in particular to a kind of semiconductor deposition cavity residue cleaning method. BACKGROUND

[0002] LED semiconductor chip in production process usually needs to utilize plasma enhanced chemical vapor deposition technology on wafer (LED chip's semi-finished product) deposition SiO2;Specifically, wafer needs to be placed in the deposition cavity of deposition equipment, but in the deposition process of SiO2, SiO2 will indiscriminately cover everywhere in the deposition cavity. In order to prevent avoid SiO2 fall on subsequent processing wafer, deposition cavity needs to be cleaned regularly.

[0003] The existing deposition cavity cleaning technology generally adopts high-power ionization single cleaning method. But the 4500-5000 holes with 0.6mm inlet diameter arranged at the top of the deposition cavity with 1cm spacing cannot be thoroughly cleaned. In the mass production of LED chips, SiO2 occasionally falls off with gas flow and covers the surface of wafer, which still causes abnormal appearance and electrical properties of LED chips, affecting product quality. SUMMARY

[0004] The technical problem to be solved by the present application is to provide a kind of semiconductor deposition cavity residue cleaning method, improve the cleaning degree of SiO2 at the inlet of deposition cavity.

[0005] In order to solve the above technical problems, a technical solution adopted by the present application is as follows: a kind of semiconductor deposition cavity residue cleaning method, comprising the following steps:

[0006] S1: multiple oxygen ionization is carried out on the deposition cavity;The oxygen ionization is set at the same time deposition cavity chamber pressure 80-200Pa, while carbon tetrafluoride and oxygen are introduced into the deposition cavity;

[0007] S2: discharge oxygen in the deposition cavity;

[0008] S3: set deposition cavity chamber pressure 160-200Pa, introduce 400-600sccm of carbon tetrafluoride and ionize;

[0009] S4: set deposition cavity chamber pressure 40-60Pa, introduce 400-600sccm of carbon tetrafluoride;

[0010] S5: set deposition cavity chamber pressure 160-200Pa, introduce 400-600sccm of carbon tetrafluoride.

[0011] The beneficial effects of the present application are that the different reaction conditions of carbon tetrafluoride and SiO2 make SiO2 be reacted more fully.

[0012] Specifically, first, the SiO2 is ionized in an oxygen environment; the oxygen ionization not only makes the SiO2 on the deposition cavity react, but also mainly removes the SiO2 on the cavity wall of the deposition cavity.

[0013] Subsequently, the cavity pressure in the deposition cavity is set to be lower than the atmospheric pressure, the outlet end of the deposition cavity is pumped to discharge the reactants and oxygen in the deposition cavity, so that the deposition cavity is in an oxygen-free environment; then, the deposition cavity is ionized once again, and the cavity pressure setting of the deposition cavity is changed, so that the flow rate of the carbon tetrafluoride is increased, and the impact on the air inlet hole is increased; finally, the cavity pressure setting of the deposition cavity is changed again, so that the flow rate of the carbon tetrafluoride is decreased, and the impact on the air inlet hole is decreased.

[0014] The SiO2 on the air inlet hole is impacted by the carbon tetrafluoride at different flow rates and different intensities, so that the SiO2 is consumed in different forms; in addition, the two changes of the flow rate of the carbon tetrafluoride and the impact force form a sudden change of the flow rate of the carbon tetrafluoride, and the sudden change of the flow rate of the carbon tetrafluoride can make the SiO2 be more fully reacted. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 It is a sectional view of the overall structure of a deposition cavity of the specific embodiment of the present application;

[0016] Label explanation:

[0017] 1, air inlet end; 2, air inlet plate; 3, substrate; 4, air outlet end; 5, inner wall of guide plate; 6, side wall of base. DETAILED DESCRIPTION

[0018] In order to explain the technical content, the purpose and the effect of the present application in detail, the following will be explained in combination with the embodiments and the drawings.

[0019] The present application provides a cleaning method for residual materials in a semiconductor deposition cavity, comprising the following steps:

[0020] S1: multiple oxygen ionization of the deposition cavity; while the oxygen ionization, the cavity pressure of the deposition cavity is set to 80-200 Pa, and carbon tetrafluoride and oxygen are introduced into the deposition cavity;

[0021] S2: discharging oxygen in the deposition cavity;

[0022] S3: setting the cavity pressure of the deposition cavity to 160-200 Pa, introducing 400-600 sccm of carbon tetrafluoride and ionizing;

[0023] S4: setting the cavity pressure of the deposition cavity to 40-60 Pa, introducing 400-600 sccm of carbon tetrafluoride;

[0024] S5: set the deposition cavity pressure 160-200Pa, and input 400-600sccm of carbon tetrafluoride.

[0025] From the above description, the beneficial effects of the present application are that setting different reaction conditions of carbon tetrafluoride and SiO2 makes SiO2 be reacted more fully.

[0026] Specifically, first, the ionization process of SiO2 in the oxygen environment; oxygen ionization not only makes SiO2 on the deposition cavity be reacted, but also is mainly used for removing SiO2 on the deposition cavity wall.

[0027] Subsequently, the cavity pressure in the deposition cavity is set to be lower than the atmospheric pressure, so that the exhaust end of the deposition cavity performs air exhaust on the deposition cavity, discharges the reactants and oxygen in the deposition cavity, and makes the deposition cavity in an oxygen-free environment; then, the deposition cavity is ionized once, and the cavity pressure setting of the deposition cavity is changed again, so that the flow rate of carbon tetrafluoride becomes faster, and the impact on the air inlet hole becomes stronger; finally, the cavity pressure setting of the deposition cavity is changed again, so that the flow rate of carbon tetrafluoride becomes slower, and the impact on the air inlet hole becomes weaker.

[0028] Different flow rates of carbon tetrafluoride impact SiO2 on the air inlet hole with different intensities, which can make SiO2 be consumed in different forms; in addition, the two changes of the flow rate of carbon tetrafluoride and the impact force form a sudden gas flow with a sudden change of the flow rate of carbon tetrafluoride, and the sudden gas flow can make SiO2 be reacted more fully.

[0029] Further, before the S1, the deposition cavity pressure needs to be set to 100Pa, and 200-300sccm of oxygen and 800-1200sccm of carbon tetrafluoride are input for 10-20S.

[0030] From the above description, this step is used to exhaust the impure gas in the deposition cavity, and to fill the reaction gas in the deposition cavity.

[0031] Further, the "multiple oxygen ionization of the deposition cavity" of the S1 is specifically: the deposition cavity is ionized twice in oxygen.

[0032] The "carbon tetrafluoride and oxygen input into the deposition cavity" of the S1 is specifically: 800-1200sccm of carbon tetrafluoride and 200-300sccm of oxygen are input into the deposition cavity.

[0033] From the above description, a specific number of oxygen ionization is provided, and a reasonable reaction condition of oxygen ionization is provided; the steps of the cleaning method of the semiconductor deposition cavity residue can only be simple, so that SiO2 is reacted more thoroughly.

[0034] Further, the S1 of "carrying out 2 times of oxygen ionization on the deposition cavity" is specifically: the first time of oxygen ionization is set to 100 Pa of cavity pressure of the deposition cavity, and the second time of oxygen ionization is set to 180 Pa of cavity pressure of the deposition cavity; each time of oxygen ionization lasts for 1000-1400 S, and the ionization power of each time is 400-600 W.

[0035] From the above description, different reaction conditions are provided for the two times of oxygen ionization, so that SiO2 is more fully reacted.

[0036] Further, the S3, S4 and S5 are cycled 2-4 times.

[0037] From the above description, the S3, S4 and S5 are cycled 2-4 times, so that the mutation gas flow of carbon tetrafluoride is formed more times, and SiO2 is more fully reacted.

[0038] Further, the S3 is specifically: 160-200 Pa of cavity pressure of the deposition cavity is set, 400-600 sccm of carbon tetrafluoride is introduced and ionized, lasts for 400-600 S, and the ionization power is 50-150 W.

[0039] From the above description, reasonable reaction conditions and time length of S3 are provided.

[0040] Further, the S4 is specifically: 40-60 Pa of cavity pressure of the deposition cavity is set, 400-600 sccm of carbon tetrafluoride is introduced, and lasts for 40-60 S.

[0041] From the above description, reasonable reaction time length of S4 is provided.

[0042] Further, the S5 is specifically: 160-200 Pa of cavity pressure of the deposition cavity is set, 400-600 sccm of carbon tetrafluoride is introduced, and lasts for 10-20 S.

[0043] From the above description, reasonable reaction time length of S5 is provided.

[0044] Further, in all the cleaning methods, the temperature in the deposition cavity is always kept at 200-300 degrees.

[0045] From the above description, at 250 degrees of temperature, the reaction of SiO2 is more intense.

[0046] The application background of the present application is: when SiO2 in the deposition cavity and especially SiO2 at the gas inlet hole in the deposition cavity needs to be thoroughly cleaned.

[0047] Please refer to the accompanying drawings Figure 1Firstly, the internal structure of the deposition cavity is described; the deposition cavity is internally provided with an air inlet end 1, a horizontal air inlet plate 2 and a horizontal substrate 3 from top to bottom; the air inlet plate 2 is provided with a plurality of air inlet holes, and the air outlet end 4 of the deposition cavity is at the periphery of the lower end of the deposition cavity, that is, below the side of the substrate 3.

[0048] In addition to the SiO2 that needs to be removed at the air inlet hole and on the substrate 3, the SiO2 at the following positions in the deposition cavity also needs to be removed. The edge of the air inlet plate 2 is arranged on a vertical guide plate, and the SiO2 on the inner wall 5 of the guide plate at the lower end of the air inlet plate 2 needs to be removed. The substrate 3 is arranged on a base, and the sidewall 6 of the base also needs to be cleaned, and the air outlet end 4 is also below the side of the base.

[0049] Example 1

[0050] A cleaning method of a semiconductor deposition cavity residue comprises the following steps:

[0051] Before S1, the temperature of the deposition cavity is set to 200°C and maintained throughout the entire cleaning process;

[0052] The cavity pressure of the deposition cavity is set to 100 Pa, the oxygen flow is set to 200 sccm, the carbon tetrafluoride flow is set to 800 sccm, and the duration is 15 s.

[0053] S1 comprises the following steps:

[0054] S1.1 (first oxygen ionization): The cavity pressure of the deposition cavity is set to 80 Pa, the oxygen flow is set to 200 sccm, the carbon tetrafluoride flow is set to 800 sccm, the ionization power is set to 400 W, and the duration is 1000 s.

[0055] S1.2: The cavity pressure of the deposition cavity is set to 160 Pa, the oxygen flow is set to 200 sccm, the carbon tetrafluoride flow is set to 800 sccm, and the duration is 10 s.

[0056] S1.3 (second oxygen ionization): The cavity pressure of the deposition cavity is set to 160 Pa, the oxygen flow is set to 200 sccm, the carbon tetrafluoride flow is set to 800 sccm, the ionization power is set to 400 W, and the duration is 1000 s.

[0057] S2: The cavity pressure of the deposition cavity is set to 160 Pa, the carbon tetrafluoride flow is set to 800 sccm, and the duration is 15 s.

[0058] S3: The cavity pressure of the deposition cavity is set to 160 Pa, the oxygen flow is set to 0 sccm, the carbon tetrafluoride flow is set to 400 sccm, the ionization power is set to 50 W, and the duration is 400 s.

[0059] S4: The cavity pressure of the deposition cavity is set to 40 Pa, the oxygen flow is set to 0 sccm, the carbon tetrafluoride flow is set to 400 sccm, the ionization power is set to 0 W, and the duration is 40 s.

[0060] S5: Set the chamber pressure of the deposition chamber to 160 Pa, oxygen to 0 seem, carbon tetrafluoride to 400 seem, ionization power to 0 W, and duration to 10 s.

[0061] S6: Repeat S3, S4, and S5 twice.

[0062] S7: Set the chamber pressure of the deposition chamber to 180 Pa, oxygen to 0 seem, carbon tetrafluoride to 800 seem, and duration to 15 s. Remove all the reactants in the deposition chamber to outside of the chamber.

[0063] Example Two

[0064] The cleaning method of the semiconductor deposition chamber residue comprises the following steps:

[0065] Set the temperature of the deposition chamber to 250 °C and keep the following throughout the cleaning process: set the chamber pressure of the deposition chamber to 100 Pa, oxygen to 250 seem, carbon tetrafluoride to 1000 seem, and duration to 15 s.

[0066] S1 comprises the following steps:

[0067] S1.1 (first oxygen ionization): set the chamber pressure of the deposition chamber to 100 Pa, oxygen to 250 seem, carbon tetrafluoride to 1000 seem, ionization power to 500 W, and duration to 1200 s.

[0068] The reactants are removed from the deposition chamber by pumping at the exhaust end, and the ratio of 1:4 of carbon tetrafluoride accelerates the reaction of carbon tetrafluoride; the ionization power of 500 W is high power, and the chamber pressure of 100 Pa is low chamber pressure; the high power ionization and low chamber pressure can make the reaction intensity of SiO2 at the edge of the deposition chamber greater than that in the middle of the deposition chamber; that is, the SiO2 on the side wall of the base and the inner wall of the guide plate can be more fully reacted.

[0069] S1.2: set the chamber pressure of the deposition chamber to 180 Pa, oxygen to 250 seem, carbon tetrafluoride to 1000 seem, and duration to 15 s, which can remove the reactants of the previous stage in the chamber to outside of the chamber and fill the chamber with the gas to be reacted in the next stage.

[0070] S1.3 (second oxygen ionization): set the chamber pressure of the deposition chamber to 180 Pa, oxygen to 250 seem, carbon tetrafluoride to 1000 seem, ionization power to 500 W, and duration to 1200 s.

[0071] The high ionization power and 180 Pa high chamber pressure state can make the reaction in the middle of the deposition chamber (the gas inlet plate and the substrate) greater than that in the edge region.

[0072] S2: set the chamber pressure of the deposition chamber to 180 Pa, carbon tetrafluoride to 800-1200 seem, and duration to 15 s.

[0073] This step can discharge the reactants and oxygen in the previous stage from the deposition chamber to the outside of the chamber, and fill the chamber with the gas to be reacted in the next stage.

[0074] S3: Set the chamber pressure of the deposition chamber to 180 Pa, the oxygen flow to 0 sccm, the carbon tetrafluoride flow to 500 sccm, the ionization power to 100 W, and the duration to 500 s.

[0075] The slow reaction of the small flow of carbon tetrafluoride under the ionization power of 100 W and without oxygen gently treats the residues on the gas hole wall in the previous stage.

[0076] S4: Set the chamber pressure of the deposition chamber to 50 Pa, the oxygen flow to 0 sccm, the carbon tetrafluoride flow to 500 sccm, the ionization power to 0 W, and the duration to 50 s.

[0077] The flow of carbon tetrafluoride is greatly increased, the chamber pressure is lowered, and the exhaust end is rapidly pumped, so that the carbon tetrafluoride is rapidly impacted into the gas hole.

[0078] S5: Set the chamber pressure of the deposition chamber to 180 Pa, the oxygen flow to 0 sccm, the carbon tetrafluoride flow to 500 sccm, the ionization power to 0 W, and the duration to 15 s.

[0079] The SiO2 residues in the gas hole in the previous stage are reacted by the small power ionization, the flow of carbon tetrafluoride is greatly increased, the chamber pressure is rapidly pumped, and then the chamber pressure is restored, so that the SiO2 residues in the gas hole and the reactants are carried away by the sudden flow rate caused by the low chamber pressure and the high chamber pressure.

[0080] S6: The above S3, S4, and S5 are cycled three times in sequence.

[0081] The multiple experiments verify that the three cycles effectively remove the residues in the gas hole.

[0082] S7: Set the chamber pressure of the deposition chamber to 180 Pa, the oxygen flow to 0 sccm, the carbon tetrafluoride flow to 1000 sccm, and the duration to 15 s. The last reactants in the deposition chamber are completely pumped out of the chamber.

[0083] Example Three

[0084] The cleaning method of the semiconductor deposition chamber residues comprises the following steps:

[0085] Set the deposition chamber temperature to 250°C and maintain throughout the entire cleaning process; set the chamber pressure of the deposition chamber to 120 Pa, the oxygen flow to 300 sccm, the carbon tetrafluoride flow to 1200 sccm, and the duration to 20 s.

[0086] S1 comprises the following steps:

[0087] S1.1 (first oxygen ionization) : set the chamber pressure of the deposition chamber to 120 Pa, oxygen to 300 sccm, carbon tetrafluoride to 1200 sccm, set the ionization power to 600 W, and the duration to 1400 s.

[0088] S1.2: set the chamber pressure of the deposition chamber to 200 Pa, oxygen to 300 sccm, carbon tetrafluoride to 1200 sccm, and the duration to 20 s.

[0089] S1.3 (second oxygen ionization) : set the chamber pressure of the deposition chamber to 200 Pa, oxygen to 300 sccm, carbon tetrafluoride to 1200 sccm, set the ionization power to 600 W, and the duration to 1400 s.

[0090] S2: set the chamber pressure of the deposition chamber to 200 Pa, carbon tetrafluoride to 1200 sccm, and the duration to 20 s.

[0091] S3: set the chamber pressure of the deposition chamber to 200 Pa, oxygen to 0 sccm, carbon tetrafluoride to 600 sccm, set the ionization power to 150 W, and the duration to 600 s.

[0092] S4: set the chamber pressure of the deposition chamber to 60 Pa, oxygen to 0 sccm, carbon tetrafluoride to 600 sccm, set the ionization power to 0 W, and the duration to 60 s.

[0093] S5: set the chamber pressure of the deposition chamber to 200 Pa, oxygen to 0 sccm, carbon tetrafluoride to 600 sccm, set the ionization power to 0 W, and the duration to 20 s.

[0094] S6: repeat the above S3, S4, and S5 four times.

[0095] S7: set the chamber pressure of the deposition chamber to 180 Pa, oxygen to 0 sccm, carbon tetrafluoride to 800-1200 sccm, and the duration to 15 s. Remove all the reactants in the deposition chamber to outside the chamber.

[0096] The above only describes the embodiments of the present application, and does not limit the patent scope of the present application. Any equivalent transformation or direct or indirect application in the related technical field based on the content of the present application specification and drawings is also included in the patent protection scope of the present application.

Claims

1. A method of cleaning a semiconductor deposition chamber residue, comprising: It comprises the following steps: S1: multiple oxygen ionization is performed on the deposition cavity; the oxygen ionization is performed while the cavity pressure of the deposition cavity is set to 80-200 Pa, and carbon tetrafluoride and oxygen are introduced into the deposition cavity; The "multiple oxygen ionization performed on the deposition cavity" of S1 is specifically: 2 times of oxygen ionization are performed on the deposition cavity; The "2 times of oxygen ionization performed on the deposition cavity" of S1 is specifically: the cavity pressure of the deposition cavity is set to 100 Pa in the first time of oxygen ionization, and the cavity pressure of the deposition cavity is set to 180 Pa in the second time of oxygen ionization; each time of oxygen ionization lasts for 1000-1400 S, and the ionization power of each time is 400-600 W; The "carbon tetrafluoride and oxygen are introduced into the deposition cavity" of S1 is specifically: 800-1200 sccm of carbon tetrafluoride and 200-300 sccm of oxygen are introduced into the deposition cavity; S2: oxygen in the deposition cavity is discharged; S3: the cavity pressure of the deposition cavity is set to 160-200 Pa, 400-600 sccm of carbon tetrafluoride is introduced and ionized; S4: the cavity pressure of the deposition cavity is set to 40-60 Pa, and 400-600 sccm of carbon tetrafluoride is introduced; S5: the cavity pressure of the deposition cavity is set to 160-200 Pa, and 400-600 sccm of carbon tetrafluoride is introduced; Before S1, the cavity pressure of the deposition cavity is set to 100 Pa, 200-300 sccm of oxygen and 800-1200 sccm of carbon tetrafluoride are introduced, and the process lasts for 10-20 S; S3, S4 and S5 are cycled 2-4 times.

2. The method of claim 1, wherein the cleaning of the semiconductor deposition chamber residue is characterized by, S3 is specifically: the cavity pressure of the deposition cavity is set to 160-200 Pa, 400-600 sccm of carbon tetrafluoride is introduced and ionized, the process lasts for 400-600 S, and the ionization power is 50-150 W.

3. The method of claim 1, wherein the cleaning of the semiconductor deposition chamber residue is characterized by, S4 is specifically: the cavity pressure of the deposition cavity is set to 40-60 Pa, 400-600 sccm of carbon tetrafluoride is introduced, and the process lasts for 40-60 S.

4. The method of claim 1, wherein the semiconductor deposition chamber residue is cleaned by, S5 is specifically: the cavity pressure of the deposition cavity is set to 160-200 Pa, 400-600 sccm of carbon tetrafluoride is introduced, and the process lasts for 10-20 S.

5. The method of claim 1, wherein the semiconductor deposition chamber residue is cleaned by, In all cleaning methods, the temperature in the deposition cavity is always kept at 200-300 degrees.

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