A high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure and manufacturing method

Abstract

The present invention discloses a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure and manufacturing method. The electrode structure is divided into upper and lower layers. The lower layer is a planar electrode, and the upper layer is a special-shaped planar electrode fabricated by a process method, presenting an overall shape of a combination of a circular hole and a circular groove. Both the upper and lower layer electrodes are sensitive to the out-of-plane motion of the edge of the sensitive resonator housing. The method includes realizing the patterning of the electrode by means of coating and photolithography processes on a wafer to obtain the lower electrode; fixing the prepared resonator housing to the lower electrode through precision microassembly; manufacturing the shape of the upper electrode on the wafer by etching or microfabrication processes, and realizing the patterning of the corresponding area of the upper electrode through processes such as coating, spraying glue, and multiple photolithographies; and assembling and fixing the upper electrode to the lower electrode with the resonator housing fixed by using a jig. The electrode form in the present invention improves the sensitivity of the microhemispherical gyroscope, and at the same time can limit the motion of the resonator housing, thereby enhancing the environmental adaptability of the gyroscope.

Description

Technical Field

[0001] The invention relates to the technical field of micro-electromechanical system manufacturing, in particular to a high-sensitivity, impact-resistant micro-hemispherical gyroscope electrode structure and a manufacturing method. Background Art

[0002] A gyroscope is a sensor that measures the angular motion of a carrier around a fixed axis relative to an inertial space. There are many types of gyroscopes with different sizes. Currently, most micro gyroscopes are Coriolis vibration gyroscopes. The principle of this type of gyroscope is to use the Coriolis effect to achieve energy transfer between the driving mode and the detection mode, and to obtain the angular motion parameters by detecting the displacement or strain of the gyroscope in the detection mode.

[0003] The micro-hemispherical gyroscope is a new type of Coriolis vibration gyroscope developed using micromachining technology. It has the advantages of high precision, small size, and low cost. Its working principle is the same as that of the traditional hemispherical gyroscope. When the micro-hemispherical gyroscope is working, the resonant shell maintains a four-antinode standing wave vibration under the control of the circuit system. In this vibration mode, its lip vibration mode has four antinodes and four nodes. When the gyroscope is not rotating, the positions of the antinodes and nodes remain unchanged. When the gyroscope rotates around its central symmetry axis, under the action of the Coriolis force, the position of the standing wave on the shell undergoes reverse precession, resulting in the four antinode vibration modes relative to the shell producing a precession angle that is proportional to the shell rotation angle and in the opposite direction, and the relationship between them is constant. The core components of the micro-hemispherical gyroscope are the micro-hemispherical resonant shell and electrodes. The resonant shell is required to have high symmetry and high quality factor, and is often made of materials with low thermoelastic damping, such as fused quartz glass. Common forms of electrodes include planar electrodes, cylindrical electrodes, and spherical electrodes. Planar electrodes are widely used due to their simple manufacturing and low assembly requirements. However, due to the capacitance area, the sensitivity of the micro-hemispherical gyroscope based on the planar electrode configuration is lower than that of other forms of electrodes.

[0004] To improve the sensitivity of a microhemispherical gyroscope based on planar electrodes, research institutions such as the University of California and the National University of Defense Technology have added a sensitivity amplification structure to the edge of the resonant housing. This structure is mostly tooth-shaped and is evenly and discretely distributed on the circumference of the resonant housing. The amplification structure significantly increases the capacitance area and reduces the difficulty of mass trimming of the structure, thereby improving the sensitivity and performance of the microhemispherical gyroscope with planar electrodes. However, even for a microhemispherical gyroscope with an amplification structure, there are still the following problems: 1. Signal interference. Since the driving and detecting electrodes are coplanar and relatively close in position, signal interference is likely to occur during the operation of the gyroscope, causing deterioration of the gyroscope output performance (although this interference effect can be improved through backend signal processing); 2. The sensitivity can be further improved. The existing planar electrode structure only measures the movement of the bottom surface of the amplification structure and does not utilize the movement signal of the top surface; 3. The ability to resist the mechanical environment is weak. The resonant housing is approximately a ring with a lip and a cantilever beam structure with an arc surface. The maximum displacement exists at the lip, and the maximum stress exists near the apex of the arc surface. It is necessary to limit the movement amplitude at the lip to improve the ability of the structure to resist the mechanical environment. Summary of the Invention

[0005] In view of this, the technical problem to be solved by the present invention is to overcome the deficiencies in the prior art and provide a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure and manufacturing method. Among them, a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure provided in the first aspect of the present invention is applicable to a microhemispherical resonant housing with a sensitivity amplification structure at the lip. A high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure manufacturing method provided in the second aspect of the present invention has simple operation, low assembly requirements, and is easy to realize mass production.

[0006] In the first aspect of the present invention, a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure of the present invention, the electrode structure is applicable to a microhemispherical resonant housing with a sensitivity amplification structure at the lip, and the microhemispherical gyroscope electrode structure includes an upper electrode and a lower electrode; the upper electrode is a special-shaped planar electrode structure, the upper electrode includes a plurality of upper electrode patterns, and each upper electrode pattern is symmetrically distributed on the circumference; the lower surface of the upper electrode is the assembly reference surface; the upper electrode includes a combination structure of a ring and a circular groove, the ring and the circular groove are concentric in the horizontal direction and are in an up-and-down relationship in the vertical direction; the circular hole is hollow, the inner diameter of the circular hole is slightly larger than the outer diameter of the lip of the microhemispherical resonant housing, and the bottom surface of the circular hole serves as the upper plate of the planar capacitor; the diameter of the circular groove is slightly larger than the outer diameter of the microhemispherical resonant housing, and the bottom surface of the circular groove is the lower surface of the upper electrode; the lower electrode is a planar electrode structure, the upper surface of the lower electrode serves as the lower plate of the planar capacitor, the upper surface of the lower electrode includes a plurality of lower electrode patterns, and each lower electrode pattern is circumferentially distributed; the upper electrode and the lower electrode are assembled and connected through the assembly reference surface.

[0007] In the second aspect of the present invention, a method for fabricating an electrode structure of a high-sensitivity and shock-resistant microhemispherical gyroscope of the present invention is applicable to a microhemispherical resonant housing with a sensitivity amplification structure along the lip edge. The method includes:

[0008] Obtain a first wafer, perform patterning on the surface of the first wafer to form a lower electrode having a plurality of lower electrode patterns distributed in a circumferential manner.

[0009] Obtain a second wafer, perform etching or microfabrication process on the second wafer to form an upper electrode structure having a combined structure of a ring and a circular groove; the ring and the circular groove are concentric in the horizontal direction and in an up-and-down relationship in the vertical direction; the circular hole is in a hollow shape, the inner diameter of the circular hole is slightly larger than the outer diameter at the lip edge of the microhemispherical resonant housing, and the bottom surface of the circular hole serves as the upper electrode plate of the parallel-plate capacitor; the diameter of the circular groove is slightly larger than the outer diameter of the microhemispherical resonant housing, and the bottom surface of the circular groove is the lower surface of the upper electrode.

[0010] Perform patterning on the upper electrode structure to form an upper electrode with each upper electrode pattern distributed in a circumferential manner.

[0011] Compared with the prior art, the advantages of the present invention are as follows:

[0012] The electrode structure of the present invention not only improves the sensitivity of the microhemispherical gyroscope, but also can limit the movement of the resonant housing, enhancing the anti-vibration and shock resistance of the gyroscope. The manufacturing method of the electrode structure is simple in operation and convenient for mass production. Description of the Drawings

[0013] Figure 1 It is a schematic diagram of the assembly of the microhemispherical resonant housing and the electrode;

[0014] Figure 2 It is a schematic diagram of the structure of the lower electrode;

[0015] Figure 3 It is a schematic diagram of the distribution of the lower electrode patterns;

[0016] Figure 4 It is a schematic diagram of the structure of the upper electrode;

[0017] Figure 5 It is a schematic diagram of the distribution of the upper electrode patterns;

[0018] Figure 6 It is a flowchart of a method for fabricating an electrode structure of a high-sensitivity and shock-resistant microhemispherical gyroscope according to an embodiment of the present invention;

[0019] Figure 7 It is a flowchart of the etching of the upper electrode structure;

[0020] Figure 8Schematic diagram of another etching structure of the upper electrode structure;

[0021] Figure 9 Flow chart for fabricating the upper electrode pattern;

[0022] Figure 10 Flow chart for the process of dividing the upper electrode pattern;

[0023] Figure 11 Flow chart for the method of fabricating the electrode structure of a high-sensitivity and shock-resistant microhemispherical gyroscope according to a preferred embodiment of the present invention;

[0024] The names represented by the reference numerals in the figure are as follows: 1 is the microhemispherical resonant housing, 102 is the sensitivity amplification structure, 2 is the upper electrode, 201 is the round hole, 2011 is the bottom surface of the round hole, 202 is the round groove, 2021 is the bottom surface of the round groove, 203 is the electrode pattern on the bottom surface of the upper electrode, 204 is the metal film layer at the fixed position on the bottom surface of the upper electrode, 205 is the electrode pattern on the top surface of the upper electrode, 3 is the lower electrode, 301 is the lower electrode pattern, 302 is the metal film layer at the fixed position on the surface of the lower electrode, 4 is the bonding material, 5 is the first wafer, 6 is the second wafer, 7 is the metal film layer on the surface of the second wafer, 8 is the photoresist layer on the surface of the second wafer, 9 is the upper electrode structure, 10 is the metal film layer on the upper electrode structure, 11 is the photoresist layer on the upper electrode structure, 12 is the photoresist layer sprayed during the side lithography of the upper electrode structure, 13 is the metal film layer on the side of the upper electrode structure, 14 is the first flat plate structure, and 15 is the second flat plate structure. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0026] Figure 1 Schematic diagram of the assembly of the microhemispherical resonant housing and the electrodes; it includes a microhemispherical resonant housing 1 with a sensitivity amplification structure on the lip edge and an electrode structure of a high-sensitivity and shock-resistant microhemispherical gyroscope according to the present invention, as Figure 1 shown. The electrode structure is applicable to the microhemispherical resonant housing 1 with a sensitivity amplification structure on the lip edge. The microhemispherical gyroscope electrode structure includes an upper electrode 2 and a lower electrode 3. The upper electrode 2 is a special-shaped planar electrode structure, and the lower electrode 3 is a common planar electrode structure. The upper electrode 2 and the lower electrode 3 are fixed by a bonding material 4, and the lower electrode 3 and the microhemispherical resonant housing 1 are fixed by a bonding material 4.

[0027] Among them, in the embodiments of the present invention, both the upper electrode 2 and the lower electrode 3 are for the out-of-plane movement of the sensitive resonant housing sensitivity amplification structure 102; the upper electrode 2, the sensitivity amplification structure 102, and the lower electrode 3 form a sandwich structure from top to bottom. The upper electrode 2 and the lower electrode 3 are both fixed plates in the planar capacitance detection circuit. That is, the bottom surface 2011 of the circular hole of the upper electrode 2 serves as the upper plate of the planar capacitor, and the upper surface of the lower electrode 3 serves as the lower plate of the planar capacitor; they are also limit devices for the micro-hemispherical resonant housing sensitivity amplification structure 102. That is, the upper and lower electrodes fix the position of the sensitivity amplification structure 102, and the two are fixed together through a precision assembly process to achieve signal detection and vibration limitation of the micro-hemispherical resonant housing 1.

[0028] In some embodiments of the present invention, the upper electrode 2 and the lower electrode 3 can be made of any one of fused silica glass, borosilicate glass, or silicon.

[0029] In the preferred embodiments of the present invention, the upper electrode 2 and the lower electrode 3 are made of fused silica glass; the thickness of the lower electrode is preferably 0.5 mm to 2 mm.

[0030] Figure 2 This is a schematic diagram of the lower electrode structure in the embodiments of the present invention. As Figure 2 shown, the lower electrode 3 is prepared from the first wafer 5. After metallization, spin coating, photolithography, development, etching, resist stripping and cleaning, and dicing on the upper surface of the first wafer 5, the patterned lower electrode 3 is obtained. The upper surface of the lower electrode 3 serves as the lower plate of the planar capacitor. The lower electrode 3 includes a plurality of lower electrode patterns 301, and the plurality of lower electrode patterns 301 correspond to the sensitivity amplification structure 102.

[0031] Figure 3 This is a schematic diagram of the distribution of the lower electrode patterns in the embodiments of the present invention. As Figure 3 shown, in the embodiments of the present invention, each of the lower electrode patterns 301 is circularly distributed, and there is a metal film layer 302 at the fixed position on the surface of the lower electrode around each lower electrode pattern 301; among them, the number of the lower electrode patterns 301 can be determined by those skilled in the art according to actual situations. For example, 8, 16, 24, etc. can be selected.

[0032] Figure 4 This is a schematic diagram of the upper electrode structure in the embodiments of the present invention. As Figure 4As shown, the upper electrode 2 includes a combined structure of a circular ring 201 and a circular groove 202. The circular ring 201 and the circular groove 202 are concentric in the horizontal direction and are in an up-and-down relationship in the vertical direction. The circular hole 201 is in a hollow shape, and the inner diameter of the circular hole 201 is slightly larger than the outer diameter at the lip edge of the micro-hemispherical resonant housing 1, that is, the maximum outer circle after removing the sensitivity amplification structure. The bottom surface 2011 of the circular hole serves as the upper electrode plate of the planar capacitor. The diameter of the circular groove 202 is slightly larger than the outer diameter of the micro-hemispherical resonant housing 1. The bottom surface 2021 of the circular groove serves as the assembly reference surface, and the bottom surface 2021 of the circular groove is the lower surface of the upper electrode 2. The upper electrode 2 and the lower electrode 3 are assembled and connected through the planar assembly reference surface.

[0033] Figure 5 is a schematic diagram of the upper electrode pattern in an embodiment of the present invention. As Figure 5 shown, the lower surface of the upper electrode 2 includes a plurality of Figure 5 upper electrode bottom electrode patterns 203 as shown in (a), and each upper electrode bottom electrode pattern 203 is symmetrically distributed on the circumference, and the shape corresponds to the sensitivity amplification structure 102. Each upper electrode bottom electrode pattern 203 is connected to the upper electrode top surface pattern 205 as shown in Figure 5 (b) through the side wall of the circular hole 201 to realize the extraction of electrical signals. And there is a metal film layer 204 at the fixed position on the surface of all upper electrode bottom electrode patterns 203. The lower surface of the upper electrode 2 is the planar assembly reference surface.

[0034] Figure 6 is a flowchart of a method for manufacturing a high-sensitivity and shock-resistant micro-hemispherical gyro electrode structure according to an embodiment of the present invention. As Figure 6 shown, the method includes:

[0035] 101. Obtain a first wafer, perform patterning on the surface of the first wafer to form a lower electrode having a plurality of lower electrode patterns distributed in a circumference.

[0036] In an embodiment of the present invention, it is necessary to obtain a first wafer. Taking the first wafer as a fused silica glass wafer as an example, after metallization, spin coating, photolithography, development, etching, resist stripping and cleaning, and cutting on the upper surface of the first wafer, the patterned lower electrode pattern 5 can be obtained. The lower electrode patterns 301 in the lower electrode 3 are evenly distributed along the circumference, and the preferred number is 8 or 16.

[0037] 103. Obtain a second wafer, perform etching or microfabrication process on the second wafer to form an upper electrode structure having a combined structure of a circular ring and a circular groove.

[0038] In an embodiment of the present invention, a second wafer 6 needs to be obtained. The second wafer 6 can be fused silica glass, borosilicate glass, or silicon wafer. In this embodiment, the second wafer 6 is still taken as a fused silica glass wafer as an example. As Figure 7 shown, after coating, spraying glue, photolithography, developing, and removing glue on the upper and lower surfaces of the second wafer 6, a metal film layer 7 on the surface of the second wafer and a photoresist layer 8 on the surface of the second wafer are respectively formed as Figure 7 (a). The metal film layer 7 on the surface of the second wafer completely covers the upper and lower surfaces of the second wafer 6, that is, the front and back sides, while the photoresist layer 8 on the surface of the second wafer is covered on the surface of part of the metal film layer 7, and the width ranges of the photoresist layers 8 covered on the upper and lower surfaces are inconsistent. The obtained Figure 7 (a) the second wafer 6 is placed in a film layer etching liquid, as Figure 7 (b) shown, to remove the unprotected metal film layer above the second wafer 6, that is, the metal film layer 7 not covered by the photoresist layer 8, so as to form barrier layers with different pore diameters on the upper and lower surfaces of the second wafer 6. The Figure 7 (b) the second wafer 6 is placed in an etching solution for wet etching, as Figure 7 (c) shown, to etch away part of the second wafer 6 to form an upper electrode structure 9.

[0039] In another embodiment of the present invention, two second wafers 6 need to be obtained. The second wafer 6 can be fused silica glass or borosilicate glass. In this embodiment, the second wafer 6 is still taken as a fused silica glass wafer as an example. As Figure 8 (a) shown, a circular hole pattern is made on one second wafer by using a femtosecond laser induced deformation process, and a first flat sheet structure 14 with circular holes 201 is made through wet etching; as Figure 8 (b) shown, a second flat sheet structure 15 with circular grooves 202 is made on another second wafer by using the same method.

[0040] It can be understood that different from the first embodiment, the manufacturing method of the upper electrode structure 9 in this preferred embodiment is through a microfabrication process. Two second wafers are used to respectively make the circular holes 201 and circular grooves 202 of the upper electrode 2, and the circular holes 201 and circular grooves 202 are assembled into the upper electrode structure 9 through an assembly process. The purpose of this method is to avoid chamfers generated by wet etching of glass materials. Obtain a better flatness of the bottom surface 2011 of the circular hole and the bottom surface 2021 of the circular groove, and reduce the electrode size.

[0041] In an embodiment of the present invention, the thicknesses of the circular hole 201 and the circular groove 202 may be different or the same, but the depth of the circular groove 202 must be greater than the sum of the thickness of the microhemispherical resonant housing and the flat capacitor gap, and the thickness of the circular hole 201 may be less than the thickness of the circular groove 202.

[0042] 105. Pattern the upper electrode structure to form upper electrodes with the upper electrode patterns distributed in a circle.

[0043] In an embodiment of the present invention, after coating and spraying glue on the upper electrode structure 9, a metal film layer 10 on the upper electrode structure and a photoresist layer 11 on the upper electrode structure are respectively formed, as Figure 9 (a) shown. After separately lithographically developing the front and back sides of the upper electrode structure 9 using photolithography masks with different pattern shapes, a barrier layer as shown in Figure 9 (b) is formed. After film layer etching and cleaning, the electrode pattern 203 on the bottom surface of the upper electrode, the electrode pattern 205 on the top surface of the upper electrode, and the metal film layer 204 are obtained.

[0044] In an embodiment of the present invention, patterns 203 and 205 have been formed on the top and bottom surfaces of the obtained upper electrode structure 9, but the two sides are connected, as Figure 10 (a) shown. It is necessary to divide the connected area, that is, the metal film layer 13 on the side of the upper electrode structure. Glue spraying treatment is performed on the entire upper electrode structure 9 with the metal film layer 13 in step 103 to obtain the photoresist layer 12 sprayed during sidewall lithography of the upper electrode structure. After lithographically developing, developing, and removing the glue from the sidewall of the upper electrode structure 9 using a photolithography mask, a barrier layer is formed, as Figure 10 (b) shown. After etching and cleaning, the division of each electrode pattern on the sidewall is realized, and the independent electrode pattern 203 on the bottom surface of the upper electrode is formed, and the upper electrode 2 with the upper electrode pattern is obtained.

[0045] Figure 11 It is a flowchart of a manufacturing method for a high-sensitivity and shock-resistant microhemispherical gyro electrode structure in another embodiment of the present invention, as Figure 11 shown, and the method includes:

[0046] 201. Obtain a first wafer, perform patterning on the surface of the first wafer to form a lower electrode with a plurality of lower electrode patterns distributed in a circle.

[0047] 202. Metallize the prepared microhemispherical resonant housing and fix the microhemispherical resonant housing on the lower electrode through precision microassembly.

[0048] In an embodiment of the present invention, both the inner and outer surfaces of the prepared microhemispherical resonant housing 1 are metallized. The fixture is rotated to ensure the uniformity of the film layer and the impedance of the inner and outer film layers. Through precise microassembly, the microhemispherical resonant housing 1 is fixed on the lower electrode 3, and the geometric center of the microhemispherical resonant housing 1 coincides with the graphic distribution center of the lower electrode 3, and the sensitivity amplification structure 102 is aligned with the lower electrode pattern 301 of the lower electrode 3.

[0049] 203. Obtain a second wafer, perform etching or microfabrication process treatment on the second wafer to form an upper electrode structure having a combined structure of a ring and a circular groove.

[0050] 204. Perform patterning on the upper electrode structure to form upper electrodes with the upper electrode patterns distributed in a circumference.

[0051] 205. Use a fixture and an adhesive material to assemble and fix the upper electrode to the lower electrode on which the microhemispherical resonant housing is fixed.

[0052] In an embodiment of the present invention, a fixture and an adhesive material 4 are used to assemble and fix the upper electrode 2 described in step 204 to the lower electrode 3 on which the microhemispherical resonant housing is fixed. Among them, the adhesive material 4 can preferably be solder.

[0053] It can be understood that the specific implementation manners of some steps in this embodiment can refer to the corresponding steps of the foregoing embodiments. To avoid repetition, the present invention will not list them one by one. In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "coaxial", "bottom", "one end", "top", "middle", "the other end", "upper", "one side", "top", "inner", "outer", "front", "center", "both ends", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present invention.

[0054] In the present invention, unless otherwise clearly defined and limited, the terms "mount", "set", "connect", "fix", "rotate", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication of two elements or the interaction relationship between two elements. Unless otherwise clearly limited, for those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0055] Although embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure, characterized in that: The electrode structure is applicable to a micro - hemispherical resonant housing with a sensitivity amplification structure along the lip edge. The micro - hemispherical gyro electrode structure includes an upper electrode and a lower electrode. The upper electrode is a special - shaped planar electrode structure, which includes a plurality of upper electrode patterns, and each upper electrode pattern is symmetrically distributed on the circumference. The lower surface of the upper electrode is the assembly reference surface. The upper electrode includes a combined structure of a ring and a circular groove. The ring and the circular groove are concentric in the horizontal direction and are in an up - and - down relationship in the vertical direction. The ring is hollow, the inner diameter of the ring is slightly larger than the outer diameter of the lip edge of the micro - hemispherical resonant housing, and the bottom surface of the ring serves as the upper plate of the parallel - plate capacitor. The diameter of the circular groove is slightly larger than the outer diameter of the micro - hemispherical resonant housing, and the bottom surface of the circular groove is the lower surface of the upper electrode. The lower electrode is a planar electrode structure, the upper surface of the lower electrode serves as the lower plate of the parallel - plate capacitor, and the upper surface of the lower electrode includes a plurality of lower electrode patterns, and each lower electrode pattern is circumferentially distributed. The upper electrode and the lower electrode are assembled and connected through the assembly reference surface.

2. The electrode structure of a highly sensitive and shock-resistant microhemispherical gyroscope according to claim 1, characterized in that: The upper electrode, the micro - hemispherical resonant housing, and the lower electrode are arranged from top to bottom, and the upper electrode and the lower electrode are fixed by an adhesive material, and the lower electrode and the micro - hemispherical resonant housing are fixed by precision micro - assembly. The geometric center of the micro - hemispherical resonant housing is aligned with the distribution center of the lower electrode, and the sensitivity amplification structure is aligned with each lower electrode pattern of the lower electrode. The lip edge of the micro - hemispherical resonant housing is aligned with the circular groove of the upper electrode for limiting.

3. A high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure according to claim 1, characterized in that: The thickness of the lower electrode is 0.5 mm to 2 mm.

4. A manufacturing method of a high-sensitivity and shock-resistant microhemispherical gyro electrode structure, which is applicable to a microhemispherical resonant housing with a sensitivity amplification structure on the lip edge and is used to manufacture a high-sensitivity and shock-resistant microhemispherical gyro electrode structure as described in any one of claims 1-3, characterized in that The method includes: Obtaining a first wafer, performing patterning on the surface of the first wafer to form a lower electrode with a plurality of lower electrode patterns distributed circumferentially. Obtaining a second wafer, performing etching or micro - machining process on the second wafer to form an upper electrode structure with a combined structure of a ring and a circular groove. The ring and the circular groove are concentric in the horizontal direction and are in an up - and - down relationship in the vertical direction. The ring is hollow, the inner diameter of the ring is slightly larger than the outer diameter of the lip edge of the micro - hemispherical resonant housing, and the bottom surface of the ring serves as the upper plate of the parallel - plate capacitor. The diameter of the circular groove is slightly larger than the outer diameter of the micro - hemispherical resonant housing, and the bottom surface of the circular groove is the lower surface of the upper electrode. Performing patterning on the upper electrode structure to form an upper electrode with each upper electrode pattern distributed circumferentially.

5. The manufacturing method of a high-sensitivity and impact-resistant microhemispherical gyroscope electrode structure according to claim 4, characterized in that, Obtaining a second wafer, performing etching on the second wafer to form an upper electrode structure with a combined structure of a ring and a circular groove, which includes coating, spraying glue, photolithography, developing and removing glue on both the upper and lower surfaces of the second wafer, then putting the obtained second wafer into a film - layer etching liquid to remove the unprotected metal film layer, so that barrier layers with different pore diameters are formed on the upper and lower surfaces of the second wafer, and then putting the second wafer into an etching solution for wet etching to obtain an upper electrode structure with a combined structure of a ring and a circular groove with different pore diameters.

6. The manufacturing method of a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure according to claim 4, characterized in that, Obtain a second wafer, and adopt a femtosecond laser-induced denaturation and wet etching process on the second wafer to form an upper electrode structure with a combined structure of a ring and a circular groove, including fabricating a first flat structure with a ring on one second wafer; fabricating a second flat structure with a circular groove on another second wafer.

7. A method for fabricating a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure according to claim 4, characterized in that, Performing patterning on the upper electrode structure includes coating and spraying glue on the upper electrode structure, performing photolithography on the top surface, bottom surface, and side walls of the upper electrode using different photomask plates to form a barrier layer, and after etching and cleaning, forming independent upper electrode patterns.

8. A method for fabricating a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure according to claim 4, characterized in that, After forming the lower electrode with a plurality of lower electrode patterns distributed in a circumferential manner, it further includes metallizing the prepared microhemispherical resonator housing and fixing the microhemispherical resonator housing on the lower electrode through precision microassembly.

9. A method for fabricating a high-sensitivity and shock-resistant microhemispherical gyroscope electrode structure according to claim 7 or 8, characterized in that After performing patterning on the upper electrode structure to form an upper electrode with each upper electrode pattern distributed in a circumferential manner, it further includes using a jig and an adhesive material to assemble and fix the upper electrode with the lower electrode on which the microhemispherical resonator housing is fixed.

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