A diluted magnetic semiconductor thin film for In-based semiconductor material and a method for preparing the same

By doping InO-based semiconductor materials with transition metal elements, In2-xMxO3 dilute magnetic semiconductor thin films were prepared, solving the problem of low spin injection efficiency and realizing room temperature ferromagnetism of In-based semiconductor materials, thus promoting the development of spintronic devices.

CN116479385BActive Publication Date: 2025-12-09CHINA IRON & STEEL RESEARCH INSTITUTE GROUP CO LTD
1 Cites 0 Cited by

Patent Information

Application Number
CN202310391653.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-04-13
Publication Date
2025-12-09
Estimated Expiration
2043-04-13

AI Technical Summary

Technical Problem

In the existing technology, the spin injection efficiency between metals and semiconductors is too low, which prevents spintronic devices from being fully integrated into the semiconductor industry, and there are no reports on dilute magnetic semiconductor thin films used in In-based semiconductor materials.

Method used

InO-based semiconductor materials doped with transition metal elements were used to prepare In2-xMxO3 ceramic targets through isostatic pressing solid-state reaction synthesis. Dilute magnetic semiconductor films were then deposited in wide-gap oxide semiconductors using laser pulse deposition technology. Deposition parameters such as oxygen partial pressure and temperature were controlled to achieve room-temperature ferromagnetism.

Benefits of technology

In-based dilute magnetic semiconductor thin films with room-temperature ferromagnetism were fabricated, which improved the spin injection efficiency of spintronic devices, met the requirements of carrier-mediated operation, and enabled the development of highly integrated and low-power spintronic devices.

✦ Generated by Eureka AI based on patent content.
Patent Text Reader

Abstract

The application belongs to the technical field of semiconductor thin film materials, and particularly relates to a diluted magnetic semiconductor thin film for In-based semiconductor materials. 2‑x M x O3, the doping element is a non-magnetic transition metal M, which is one or more of Fe, Mn, Co or Ni, and 0 < x < 0.1. The application adopts a laser pulse deposition technology (PLD) based on a ceramic target material to prepare an InO-based diluted magnetic semiconductor thin film with room-temperature ferromagnetism by means of a transition metal ion as a donor doping mode. The PLD technology of the application can incorporate a high proportion of transition metal ions into the InO lattice, and a large number of lattice defects can be introduced by controlling the deposition conditions, so that a ferromagnetic thin film material higher than room temperature is induced, which can be applied to spin electronic devices.
Need to check novelty before this filing date? Find Prior Art