An annealing method for cadmium zinc telluride wafers

By combining slow heating and cooling annealing with vacuum treatment and cleaning steps, the problems of numerous bright spots and high internal stress on the surface of cadmium zinc telluride wafers have been solved, achieving efficient and low-cost wafer modification suitable for large-scale production.

CN116479530BActive Publication Date: 2026-04-14VITAL MICRO-ELECTRONICS TECH CO LTD
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Patent Information

Application Number
CN202310243494.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2023-03-14
Publication Date
2026-04-14
Estimated Expiration
2043-03-14

AI Technical Summary

Technical Problem

Existing technologies are insufficient to effectively remove bright spots from the surface of cadmium zinc telluride wafers, and they also suffer from problems such as high internal stress and insufficient resistivity. In particular, large-scale production is subject to issues such as wafer deformation, complex processes, and high costs.

Method used

An annealing method is adopted, which involves slowly heating to 790-805℃ and holding at that temperature for 12-15 hours, followed by slowly cooling to below 300℃. This is combined with vacuum treatment and cleaning steps, specifically including a vacuum degree of 1×10-4 Pa, a heating rate of 0.4-1.3℃/min, a cooling rate of 0.5-1.2℃/min, and cleaning the wafers with a mixture of concentrated hydrochloric acid and concentrated nitric acid.

Benefits of technology

It significantly reduces the number of bright spots with a size of 0.3μm to less than 30, with low internal stress, high resistivity, and uniform composition, making it suitable for large-scale production, with high processing efficiency and reduced production costs.

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Abstract

The application discloses an annealing method of a cadmium zinc telluride wafer, which comprises the following steps: S1, placing the cadmium zinc telluride wafer and tellurium powder into different positions of an annealing furnace, and sealing the annealing furnace and then vacuumizing; S2, slowly heating the annealing furnace to 790-805 DEG C, and then performing heat preservation; and S3, slowly cooling, and thus obtaining the cadmium zinc telluride wafer. The annealing method has the advantages of easy operation, short technological process, strong controllability, short time required, low number of bright spots of the cadmium zinc telluride wafer with a diameter of 0.3 microns after annealing (less than 30), low internal stress, uniform composition, high resistivity, few particle inclusions, and the like, and the method can process hundreds of wafers at one time, so that the processing efficiency is high, and the method has considerable application prospect.
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