A phase change material based slotted waveguide optical switch

By designing a slit waveguide optical switch based on phase change materials, utilizing the phase change properties of vanadium dioxide and the S-shaped slit structure, the low power consumption and low loss problems of existing silicon-based optical switches are solved, achieving compact size and wide bandwidth optical switching performance.

CN118519226BActive Publication Date: 2025-11-11ANHUI UNIV
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Patent Information

Application Number
CN202410754985.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-06-12
Publication Date
2025-11-11
Estimated Expiration
2044-06-12

AI Technical Summary

Technical Problem

Existing silicon-based optical switches, based on thermo-optical effects and carrier dispersion effects, struggle to simultaneously achieve low power consumption, compact size, wide operating bandwidth, and low insertion loss.

Method used

Design a slit waveguide optical switch based on phase change material, including a silicon dioxide cladding, an optical switch, a silicon dioxide buried layer, and a silicon substrate. Utilize the phase change characteristics of vanadium dioxide in the slit modulation region to achieve optical signal modulation through external electrical excitation, and combine an S-shaped slit structure to reduce coupling loss.

Benefits of technology

It achieves low power consumption, compact size, low insertion loss and wide operating bandwidth, and has good process tolerance, making it suitable for optical communication and optical computing.

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Abstract

A slit waveguide optical switch based on phase change materials, belonging to the field of optoelectronic modulation technology, is used to solve the problem that silicon-based optical switches based on thermo-optical effects and carrier dispersion effects cannot simultaneously achieve low power consumption, compact size, wide operating bandwidth, and low insertion loss. The optical switch includes an incident region, a slit modulation region, and an exit region connected sequentially along the optical transmission path. The first S-shaped slit, the rectangular slit, and the second S-shaped slit are connected sequentially. The incident tapered silicon waveguide, the rectangular vanadium dioxide waveguide, and the exit tapered silicon waveguide are connected sequentially. The incident curved silicon waveguide, the rectangular silicon waveguide, and the exit curved silicon waveguide are connected sequentially, forming a coupling waveguide. The S-shaped slit waveguide structure reduces the coupling loss caused by the optical signal entering and exiting the slit waveguide. The modulation function is achieved by applying external electrical excitation to cause a phase change in vanadium dioxide. This results in a compact size, low insertion loss, and good process tolerance.
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