3*1 type silicon carbide-based bidirectional switch power module with low parasitic inductance

Abstract

The invention discloses a 3 * 1 type silicon carbide-based two-way switch power module with low parasitic inductance, which adopts a two-way switch three-by-one mode and comprises a module substrate, a copper-clad ceramic plate, a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) chip, a bonding lead and a direct insertion type terminal, the SiC MOSFET chip is welded on the upper copper layer of the copper-clad ceramic plate through a silver sintering process, and the bonding lead is welded on the lower copper layer of the copper-clad ceramic plate. And interconnection between the chips and electrical connection between the chips and the upper copper layer are realized through bonding leads. On the basis of meeting the basic principle of a circuit, an EasyPACK packaging form is adopted, a copper-clad ceramic plate is used, the layout of a substrate is optimized, parasitic inductance on three bidirectional switch branches in the module is reduced, the consistency of commutation inductance between the branches is ensured, and the reliability of the module is improved. And various circuit topology applications such as a three-phase current source type converter, a 3 * 3 matrix converter, a three-phase Vienna PFC rectifier and the like are met.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor packaging and power modules, and relates to a silicon carbide-based bidirectional switch power module, and specifically to a 3×1 type silicon carbide-based bidirectional switch power module with low parasitic inductance. Background Art

[0002] A bidirectional switch is an active device built using semiconductor switching tubes. It achieves bidirectional current conduction when power is on and bidirectional voltage blocking when power is off. It is widely used in electric vehicles, new energy power generation, rail transit, smart grids and other fields.

[0003] The 3×1 bidirectional switch power module is a universal power module based on bidirectional switches. It is a basic component module of circuit topologies such as three-phase current source converter, direct matrix converter, pre-rectifier part of indirect matrix converter, high-frequency link inverter, and three-phase Vienna PFC rectifier.

[0004] Traditional bidirectional switches use silicon-based IGBTs plus anti-parallel diodes, which have the disadvantages of large conduction loss, low switching speed, large switching loss, and large temperature influence. As a representative material of wide bandgap semiconductors, SiC has the advantages of high critical breakdown electric field, high electron mobility, and high thermal conductivity. The SiC MOSFET prepared with it has the advantages of high voltage resistance, fast switching speed, low switching loss, low conduction loss, small size, and strong high temperature resistance. It can adapt to high temperature and high frequency use environments and is used in occasions that require higher power levels. At the same time, the bidirectional switch circuit topology composed of SiC MOSFET uses the parasitic diode in the MOSFET body without the need for additional anti-parallel diodes, which can reduce the module volume and increase the module power density. Due to the complex manufacturing process and low technical maturity of the current monolithic bidirectional switch technology, the bidirectional switch circuit topology composed of two SiC MOSFET power chips with a common source connection has become the best choice for both excellent performance and technical maturity.

[0005] The parasitic inductance introduced by the packaging structure in the switching loop causes serious damage to the power module and the system. During the device shutdown process, the combined effect of parasitic inductance and current change rate will produce voltage overshoot. This voltage overshoot is applied to the power chip, increasing the voltage stress on the power chip, increasing the requirements for the chip's withstand voltage level, and limiting the further increase of the switching frequency. At the same time, the waveform oscillation caused by parasitic inductance and MOSFET's own junction capacitance during the device switching process will also bring additional switching losses, reduce system efficiency, and may also cause electromagnetic interference problems, affecting other sensitive electronic equipment or modules, and affecting system performance.

[0006] The application prospects of 3×1 silicon carbide-based bidirectional switch power modules are bright, but there are problems such as large parasitic inductance and unbalanced parasitic inductance between branches. Therefore, a 3×1 silicon carbide-based bidirectional switch power module with low parasitic inductance and multiple application scenarios is proposed. Summary of the invention

[0007] Aiming at the problem that the 3×1 type silicon carbide based bidirectional switch power module has large parasitic inductance and unbalanced parasitic inductance between branches, the present invention provides a 3×1 type silicon carbide based bidirectional switch power module with low parasitic inductance. The present invention can adopt the EasyPACK packaging form, use copper-clad ceramic boards, optimize the substrate layout, reduce the parasitic inductance on the three bidirectional switch branches in the module, ensure the consistency of the commutation inductance between the branches, and meet the application of various circuit topologies such as three-phase current source converters, 3×3 matrix converters, and three-phase Vienna PFC rectifiers on the basis of meeting the basic principles of the circuit.

[0008] The objective of the present invention is achieved through the following technical solutions:

[0009] A 3×1 type silicon carbide-based bidirectional switch power module with low parasitic inductance, comprising a module substrate, a copper-clad ceramic plate, a SiC MOSFET chip, a bonding lead, and a plug-in terminal, wherein:

[0010] A copper-clad ceramic plate is provided on the module substrate;

[0011] The copper-clad ceramic board comprises three parts: a lower copper layer, a ceramic layer and an upper copper layer;

[0012] The SiC MOSFET chips include an upper SiC MOSFET chip of an A-phase bidirectional switch, a lower SiC MOSFET chip of an A-phase bidirectional switch, an upper SiC MOSFET chip of a B-phase bidirectional switch, a lower SiC MOSFET chip of a B-phase bidirectional switch, an upper SiC MOSFET chip of a C-phase bidirectional switch, and a lower SiC MOSFET chip of a C-phase bidirectional switch;

[0013] The bonding wires include an A-phase bonding wire, a B-phase bonding wire, a C-phase bonding wire, an upper chip gate bonding wire of an A-phase bidirectional switch, a lower chip gate bonding wire of an A-phase bidirectional switch, an upper chip gate bonding wire of a B-phase bidirectional switch, a lower chip gate bonding wire of a B-phase bidirectional switch, an upper chip gate bonding wire of a C-phase bidirectional switch, and a lower chip gate bonding wire of a C-phase bidirectional switch;

[0014] The plug-in terminal includes a P terminal, an A phase terminal, a B phase terminal, a C phase terminal, an A phase bidirectional switch upper tube gate terminal, an A phase bidirectional switch source terminal, an A phase bidirectional switch lower tube gate terminal, a B phase bidirectional switch upper tube gate terminal, a B phase bidirectional switch source terminal, a B phase bidirectional switch lower tube gate terminal, a C phase bidirectional switch upper tube gate terminal, a C phase bidirectional switch source terminal, and a C phase bidirectional switch lower tube gate terminal;

[0015] The upper copper layer includes a P-pole copper layer, an A-pole copper layer, a B-pole copper layer, a C-pole copper layer, an A-phase bidirectional switch upper tube gate copper layer, an A-phase bidirectional switch source electrode copper layer, an A-phase bidirectional switch lower tube gate copper layer, a B-phase bidirectional switch upper tube gate copper layer, a B-phase bidirectional switch source electrode copper layer, a B-phase bidirectional switch lower tube gate copper layer, a C-phase bidirectional switch upper tube gate copper layer, a C-phase bidirectional switch source electrode copper layer, and a C-phase bidirectional switch lower tube gate copper layer;

[0016] The P-pole copper layer takes the P-pole terminal as the central axis, and the upper SiC MOSFET chip of the A-phase bidirectional switch, the upper SiC MOSFET chip of the B-phase bidirectional switch, and the upper SiC MOSFET chip of the C-phase bidirectional switch are symmetrically arranged on the three edges of the P-pole copper layer, and the lower SiC MOSFET chip of the A-phase bidirectional switch, the lower SiC MOSFET chip of the B-phase bidirectional switch, and the lower SiC MOSFET chip of the C-phase bidirectional switch are respectively arranged on the A-pole copper layer, the B-pole copper layer, and the C-pole copper layer at an angle parallel to the edge line of the P-pole copper layer;

[0017] The upper SiC MOSFET chip of the A-phase bidirectional switch is connected to the lower SiC MOSFET chip of the A-phase bidirectional switch by using the A-phase bonding wire, the upper SiC MOSFET chip of the B-phase bidirectional switch is connected to the lower SiC MOSFET chip of the B-phase bidirectional switch by using the B-phase bonding wire, and the upper SiC MOSFET chip of the C-phase bidirectional switch is connected to the lower SiC MOSFET chip of the C-phase bidirectional switch by using the C-phase bonding wire;

[0018] The A-phase bonding wire, the B-phase bonding wire, and the C-phase bonding wire add a landing point in the process of connecting the upper and lower tube SiC MOSFET chips, so that the three groups of bonding wires are respectively connected to the A-phase bidirectional switch source copper layer, the B-phase bidirectional switch source copper layer, and the C-phase bidirectional switch source copper layer;

[0019] The gate bonding lead of the upper tube chip of the A-phase bidirectional switch is connected to the gate of the upper tube of the A-phase bidirectional switch and the copper layer of the gate of the upper tube of the A-phase bidirectional switch; the gate bonding lead of the lower tube chip of the A-phase bidirectional switch is connected to the gate of the lower tube of the A-phase bidirectional switch and the copper layer of the gate of the lower tube of the A-phase bidirectional switch; the gate bonding lead of the upper tube chip of the B-phase bidirectional switch is connected to the gate of the upper tube of the B-phase bidirectional switch and the copper layer of the gate of the upper tube of the B-phase bidirectional switch; the gate bonding lead of the lower tube chip of the B-phase bidirectional switch is connected to the gate of the lower tube of the B-phase bidirectional switch and the copper layer of the gate of the lower tube of the B-phase bidirectional switch; the gate bonding lead of the upper tube chip of the C-phase bidirectional switch is connected to the gate of the upper tube of the C-phase bidirectional switch and the copper layer of the gate of the upper tube of the C-phase bidirectional switch; the gate bonding lead of the lower tube chip of the C-phase bidirectional switch is connected to the gate of the lower tube of the C-phase bidirectional switch and the copper layer of the gate of the lower tube of the C-phase bidirectional switch;

[0020] The P terminal is led out from the center of the P-pole copper layer, and the A-phase terminal, the B-phase terminal, and the C-phase terminal are led out from the A-pole copper layer, the B-pole copper layer, and the C-pole copper layer, respectively, and are distributed symmetrically from the center;

[0021] The A-phase bidirectional switch upper tube gate terminal, the A-phase bidirectional switch source terminal, and the A-phase bidirectional switch lower tube gate terminal are respectively led out from the A-phase bidirectional switch upper tube gate copper layer, the A-phase bidirectional switch source electrode copper layer, and the A-phase bidirectional switch lower tube gate copper layer; the B-phase bidirectional switch upper tube gate terminal, the B-phase bidirectional switch source terminal, and the B-phase bidirectional switch lower tube gate terminal are respectively led out from the B-phase bidirectional switch upper tube gate copper layer, the B-phase bidirectional switch source electrode copper layer, and the B-phase bidirectional switch lower tube gate copper layer; the C-phase bidirectional switch upper tube gate terminal, the C-phase bidirectional switch source terminal, and the C-phase bidirectional switch lower tube gate terminal are respectively led out from the C-phase bidirectional switch upper tube gate copper layer, the C-phase bidirectional switch source electrode copper layer, and the C-phase bidirectional switch lower tube gate copper layer;

[0022] The A-phase bidirectional switch upper tube gate terminal, the A-phase bidirectional switch source terminal, the A-phase bidirectional switch lower tube gate terminal, the B-phase bidirectional switch upper tube gate terminal, the B-phase bidirectional switch source terminal, the B-phase bidirectional switch lower tube gate terminal, the C-phase bidirectional switch upper tube gate terminal, the C-phase bidirectional switch source terminal, and the C-phase bidirectional switch lower tube gate terminal are located at the edge of the copper-clad ceramic board as signal terminals.

[0023] Compared with the prior art, the present invention has the following advantages:

[0024] 1. By designing the tight layout of the module's substrate, the effect of reducing the parasitic inductance between branches is achieved.

[0025] 2. The completely symmetrical layout design realizes the consistency of commutation inductance among the three groups of bidirectional switches, which can be applied to multiple circuit topologies such as three-phase current source converter, 3×3 matrix converter, three-phase Vienna PFC rectifier, etc., to simplify the external circuit and achieve universal effect.

[0026] 3. The present invention adopts the EasyPACK packaging form, which has the advantages of simplified integration, reduced inductance, and plug-and-play. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 This is the circuit schematic diagram of a 3×1 silicon carbide-based bidirectional switch power module;

[0028] Figure 2 This is a cross-sectional view of the EasyPACK package module;

[0029] Figure 3 It is a schematic diagram of a 3×1 type silicon carbide-based bidirectional switch power module substrate;

[0030] Figure 4 It is a top view of the substrate of a 3×1 type silicon carbide-based bidirectional switch power module;

[0031] Figure 5 It is the circuit schematic diagram of the three-phase current source converter;

[0032] Figure 6 It is the schematic diagram of matrix converter circuit;

[0033] Figure 7 It is the schematic diagram of the three-phase Vienna PFC rectifier circuit;

[0034] Figure 8 This is the schematic diagram of the high-frequency link inverter circuit;

[0035] Fig. 9 This is the schematic diagram of the circuit of three bidirectional switches in parallel. DETAILED DESCRIPTION

[0036] The technical solution of the present invention is further described below in conjunction with the accompanying drawings, but is not limited thereto. Any modification or equivalent replacement of the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention should be included in the protection scope of the present invention.

[0037] The present invention provides a 3×1 type silicon carbide-based bidirectional switch power module with low parasitic inductance. The module adopts a three-by-one mode of bidirectional switches. The module with three bidirectional switches in parallel can simultaneously meet the application of multiple circuit topologies such as three-phase current source converter, 3×3 matrix converter, and three-phase Vienna PFC rectifier. The circuit schematic diagram of the module is shown in Figure 1 As shown, the cross-sectional view is Figure 2As shown, the bottom power part of the power module includes a module substrate 13, a copper-clad ceramic board (DBC) 4, solder 8, a SiC MOSFET chip 5, bonding wires 6, a potting material 7, and a shell cover 12. The copper-clad ceramic board 4 includes three parts: a lower copper layer 1, a ceramic layer 2, and an upper copper layer 3. The SiC MOSFET chip 5 is soldered on the upper copper layer 3 of the copper-clad ceramic board 4 through a silver sintering process, and the interconnection between the chips and the electrical connection between the chip and the upper copper layer 3 are realized through the bonding wires 6. The shell cover 12 is covered on the ceramic layer 2, and the plug-in terminal 11 includes two parts, namely, a copper terminal base 9 and a copper terminal 10 inserted into the copper terminal base 9. The copper terminal base 9 is directly led out from the upper copper layer 3, as the position where the copper terminal 10 is inserted, the lower end of the copper terminal 10 is inserted into the copper terminal base 9, and the upper end of the copper terminal 10 passes through the top of the shell cover 12.

[0038] The 3×1 SiC-based bidirectional switch power module substrate model is as follows: Figure 3 As shown, the substrate plane layout is as follows Figure 4 The layout is located on the upper copper layer of the DBC substrate, and the layout includes the SiC MOSFET chip position, the bonding wire connection method, and the plug-in terminal position.

[0039] The layout of the module substrate of the present invention is described as follows:

[0040] The copper layer on the DBC substrate is divided into 13 parts, namely, the P-pole copper layer 37, the A-pole copper layer 23, the B-pole copper layer 53, the C-pole copper layer 40, the A-phase bidirectional switch upper tube gate copper layer 36, the A-phase bidirectional switch source copper layer 33, the A-phase bidirectional switch lower tube gate copper layer 32, the B-phase bidirectional switch upper tube gate copper layer 22, the B-phase bidirectional switch source copper layer 18, the B-phase bidirectional switch lower tube gate copper layer 14, the C-phase bidirectional switch upper tube gate copper layer 50, the C-phase bidirectional switch source copper layer 46, and the C-phase bidirectional switch lower tube gate copper layer 45. On the P-pole copper layer 37, with the P-pole terminal 54 as the central axis, the upper tube SiC MOSFET chip 31 of the A-phase bidirectional switch, the upper tube SiC MOSFET chip 20 of the B-phase bidirectional switch, and the upper tube SiC MOSFET chip 49 of the C-phase bidirectional switch are symmetrically arranged on the three edges of the P-pole copper layer 37, ensuring that the current flow path lengths between the three poles are consistent and the commutation inductances are the same. At the same time, the lower SiC MOSFET chip 26 of the A-phase bidirectional switch, the lower SiC MOSFET chip 15 of the B-phase bidirectional switch, and the lower SiC MOSFET chip 39 of the C-phase bidirectional switch are arranged on the A-pole copper layer 23, the B-pole copper layer 53, and the C-pole copper layer 40 at an angle parallel to the edge line of the P-pole copper layer 37. The upper SiC MOSFET chip 31 of the A-phase bidirectional switch is connected to the lower SiC MOSFET chip 26 of the A-phase bidirectional switch using the A-phase bonding wire 29, the upper SiC MOSFET chip 20 of the B-phase bidirectional switch is connected to the lower SiC MOSFET chip 15 of the B-phase bidirectional switch using the B-phase bonding wire 17, and the upper SiC MOSFET chip 49 of the C-phase bidirectional switch is connected to the lower SiC MOSFET chip 39 of the C-phase bidirectional switch using the C-phase bonding wire 42. The A-phase bonding wire 29, the B-phase bonding wire 17, and the C-phase bonding wire 42 add a landing point in the process of connecting the upper and lower SiC MOSFET chips, so that the three groups of bonding wires are respectively connected to the A-phase bidirectional switch source copper layer 33, the B-phase bidirectional switch source copper layer 18, and the C-phase bidirectional switch source copper layer 46.The upper tube chip gate bonding lead 34 of the A-phase bidirectional switch connects the gate of the upper tube 31 of the A-phase bidirectional switch and the upper tube gate copper layer 36 of the A-phase bidirectional switch, the lower tube chip gate bonding lead 27 of the A-phase bidirectional switch connects the gate of the lower tube 26 of the A-phase bidirectional switch and the lower tube gate copper layer 32 of the A-phase bidirectional switch, the upper tube chip gate bonding lead 24 of the B-phase bidirectional switch connects the gate of the upper tube 20 of the B-phase bidirectional switch and the upper tube gate copper layer 22 of the B-phase bidirectional switch, the lower tube chip gate bonding lead 52 of the B-phase bidirectional switch connects the gate of the lower tube 15 of the B-phase bidirectional switch and the lower tube gate copper layer 14 of the B-phase bidirectional switch, the upper tube chip gate bonding lead 47 of the C-phase bidirectional switch connects the gate of the upper tube 49 of the C-phase bidirectional switch and the upper tube gate copper layer 50 of the C-phase bidirectional switch, and the lower tube chip gate bonding lead 41 of the C-phase bidirectional switch connects the gate of the lower tube 39 of the C-phase bidirectional switch and the lower tube gate copper layer 45 of the C-phase bidirectional switch. The P terminal is led out from the center of the P pole copper layer, corresponding to. Figure 1 The P phase in the schematic diagram. The A phase terminal 25, the B phase terminal 51, and the C phase terminal 38 are respectively led out from the A pole copper layer 23, the B pole copper layer 53, and the C pole copper layer 40, corresponding to Figure 1 The three phases A, B, and C in the schematic diagram are distributed symmetrically in the center. At the same time, the three-pole signal terminal is satisfied. The A-phase bidirectional switch upper tube gate terminal 35, the A-phase bidirectional switch source terminal 30, and the A-phase bidirectional switch lower tube gate terminal 28 are respectively led from the A-phase bidirectional switch upper tube gate copper layer 36, the A-phase bidirectional switch source copper layer 33, and the A-phase bidirectional switch lower tube gate copper layer 32. The B-phase bidirectional switch upper tube gate terminal 21, the B-phase bidirectional switch source terminal 19, and the B-phase bidirectional switch lower tube gate terminal 16 are respectively led from the B-phase bidirectional switch upper tube gate copper layer 22, the B-phase bidirectional switch source copper layer 18, and the B-phase bidirectional switch lower tube gate copper layer 14. The C-phase bidirectional switch upper tube gate terminal 48, the C-phase bidirectional switch source terminal 44, and the C-phase bidirectional switch lower tube gate terminal 43 are respectively led from the C-phase bidirectional switch upper tube gate copper layer 50, the C-phase bidirectional switch source copper layer 46, and the C-phase bidirectional switch lower tube gate copper layer 45. A phase bidirectional switch upper tube gate terminal 35 (corresponding to Figure 1 G11), A-phase bidirectional switch source terminal (corresponding to Figure 1 S1), A phase bidirectional switch lower tube gate terminal 28 (corresponding to Figure 1 G12), B-phase bidirectional switch upper tube gate terminal 21 (corresponding to Figure 1 G21), B phase bidirectional switch source terminal 19 (corresponding to Figure 1 S2), B phase bidirectional switch lower tube gate terminal 16 (corresponding to Figure 1 G22), C-phase bidirectional switch upper tube gate terminal 48 (corresponding to Figure 1 G31), C-phase bidirectional switch source terminal 44 (corresponding to Figure 1 S3), C phase bidirectional switch lower tube gate terminal 43 (corresponding to Figure 1 G32 in the middle is located at the edge of the copper-clad ceramic board and is less affected by the power terminals.

[0041] The upper layout of the substrate uses aluminum bonding wires to achieve electrical connection between chips and between chips and copper layers. The present invention uses several aluminum bonding wires in parallel to increase its current capacity. The contact point between the aluminum bonding wire and the chip cannot exceed the metal on the upper surface of the chip.

[0042] The present invention adopts a planar central symmetrical packaging structure to achieve complete balance of parasitic parameters between parallel chips. At the same time, the compact structure makes the parasitic inductance of the entire module small. The bidirectional switches of phases A, B, and C are all symmetrically distributed along the center P terminal, and the upper and lower silicon carbide MOS tubes of each bidirectional switch are interconnected through parallel aluminum bonding wires. The gates of each chip are connected to the corresponding gate copper layer through aluminum bonding wires.

[0043] The characteristics of the present invention are as follows:

[0044] 1. The present invention adopts a planar symmetrical arrangement method, so that the parasitic inductance of the commutation circuit between the three groups of bidirectional switches remains consistent, the power loss between each group of bidirectional switches is balanced, and it can meet the use of multiple application occasions.

[0045] 2. The planar compact structure of the present invention reduces the internal parasitic inductance, reduces the power loss generated during the use of the module, and improves the reliability of the module during use.

[0046] 3. The present invention uses a silver sintering process to connect the chip and the substrate. Due to the characteristics of low-temperature welding and high-temperature operation of the silver sintering process, the reliability of the module under high temperature is greatly improved.

[0047] Example:

[0048] This embodiment is based on a 3×1 type silicon carbide-based bidirectional switch power module with low commutation inductance. The electrical interconnection between chips is achieved through aluminum bonding wires.

[0049] A phase: The source phase of the upper SiC MOSFET chip 31 of the A phase bidirectional switch and the source phase of the lower SiC MOSFET chip 26 of the A phase bidirectional switch are connected through the A phase bonding wire 29 .

[0050] B-phase: The source phase of the upper SiC MOSFET chip 20 of the B-phase bidirectional switch and the source phase of the lower SiC MOSFET chip 15 of the B-phase bidirectional switch are connected through the B-phase bonding wire 17 .

[0051] C-phase: The source phase of the upper SiC MOSFET chip 49 of the C-phase bidirectional switch and the source phase of the lower SiC MOSFET chip 39 of the C-phase bidirectional switch are connected through the C-phase bonding wire 42 .

[0052] The P-pole terminal 54 is located at the P-pole copper layer 37 , and the A-phase terminal 25 , the B-phase terminal 51 , and the C-phase terminal 38 are located at the A-pole copper layer 23 , the B-pole copper layer 53 , and the C-pole copper layer 40 , respectively.

[0053] Combination Figure 4 Analyze its current flow path and the commutation circuit between phases.

[0054] The A-phase current flow path is “P-pole terminal 54 - P-pole copper layer 37 - upper SiC MOSFET chip 31 of A-phase bidirectional switch - A-phase bonding wire 29 - lower SiC MOSFET chip 26 of A-phase bidirectional switch - A-pole copper layer 23 - A-phase terminal 25 ”.

[0055] The B-phase current flow path is “P-pole terminal 54 - P-pole copper layer 37 - upper SiC MOSFET chip 20 of B-phase bidirectional switch - B-phase bonding wire 17 - lower SiC MOSFET chip 15 of B-phase bidirectional switch - B-pole copper layer 53 - B-phase terminal 51 ”.

[0056] The C-phase current flow path is “P-pole terminal 54 - P-pole copper layer 37 - upper SiC MOSFET chip 49 of C-phase bidirectional switch - C-phase bonding wire 42 - lower SiC MOSFET chip 39 of C-phase bidirectional switch - C-pole copper layer 40 - C-phase terminal 38 ”.

[0057] The commutation circuit between phase A and phase B is "phase A terminal 25-A pole copper layer 23-lower tube SiC MOSFET chip 26 of phase A bidirectional switch-A phase bonding lead 29-upper tube SiC MOSFET chip 31 of phase A bidirectional switch-P pole copper layer 37-upper tube SiC MOSFET chip 20 of phase B bidirectional switch-B phase bonding lead 17-lower tube SiC MOSFET chip 15 of phase B bidirectional switch-B pole copper layer 53-B phase terminal 51".

[0058] The commutation circuit between phase A and phase C is "phase A terminal 25-A pole copper layer 23-lower tube SiC MOSFET chip 26 of phase A bidirectional switch-A phase bonding lead 29-upper tube SiC MOSFET chip 31 of phase A bidirectional switch-P pole copper layer 37-upper tube SiC MOSFET chip 49 of phase C bidirectional switch-C phase bonding lead 42-lower tube SiC MOSFET chip 39 of phase C bidirectional switch-C pole copper layer 40-C phase terminal 38".

[0059] The commutation circuit between phase B and phase C is "B phase terminal 51-B pole copper layer 53-lower tube SiC MOSFET chip 15 of B phase bidirectional switch-B phase bonding lead 17-upper tube SiC MOSFET chip 20 of B phase bidirectional switch-P pole copper layer 37-upper tube SiC MOSFET chip 49 of C phase bidirectional switch-C phase bonding lead 42-lower tube SiC MOSFET chip 39 of C phase bidirectional switch-C pole copper layer 40-C phase terminal 38".

[0060] Ansys Q3D is used to extract the parasitic inductance of the module current flow path.

[0061] The parasitic inductance analysis of the current flow path in the module with terminals shows that the parasitic inductance of the PA current flow path is 15.24nH; the parasitic inductance of the PB current flow path is 15.26nH; the parasitic inductance of the PC current flow path is 15.35nH. The parasitic inductance of the AB current flow path is 22.22nH; the parasitic inductance of the AC current flow path is 22.27nH; and the parasitic inductance of the BC current flow path is 22.26nH.

[0062] The parasitic inductance analysis of the current flow path in the module without terminals shows that the parasitic inductance of the PA current flow path is 6.57nH; the parasitic inductance of the PB current flow path is 6.57nH; the parasitic inductance of the PC current flow path is 6.63nH. The parasitic inductance of the AB current flow path is 13.07nH; the parasitic inductance of the AC current flow path is 13.13nH; and the parasitic inductance of the BC current flow path is 13.14nH.

[0063] Under this layout, the parasitic inductance of each loop is controlled within a relatively small range. This layout prevents the parasitic inductance from causing severe voltage overshoots during high-frequency switching operation, which can damage the chip. The inductance of each current flow path and the commutation loop between phases remain consistent. The consistent parasitic inductance of the current loop balances the power loss on each branch, improves the reliability and service life of the module, and realizes the universal function of the module.

[0064] Its typical application scenarios are as follows:

[0065] Three-phase current source converter, such as Figure 5 shown.

[0066] 3×3 matrix converter, such as Figure 6 shown.

[0067] Three-phase Vienna PFC rectifier, such as Figure 7 shown.

[0068] High frequency link inverter, such as Figure 8 shown.

[0069] Three sets of bidirectional switches are connected in parallel to expand the capacity. Fig. 9 shown.

[0070] This 3×1 silicon carbide-based bidirectional switch module has many application scenarios, bright application prospects, and high application value.

Claims

1. A 3×1 type silicon carbide based bidirectional switch power module with low parasitic inductance, characterized in that The module includes a module substrate, a copper-clad ceramic plate, a SiC MOSFET chip, bonding wires, and plug-in terminals, wherein: A copper-clad ceramic plate is provided on the module substrate; The copper-clad ceramic board comprises three parts: a lower copper layer, a ceramic layer and an upper copper layer; The SiC MOSFET chips include an upper SiC MOSFET chip of an A-phase bidirectional switch, a lower SiC MOSFET chip of an A-phase bidirectional switch, an upper SiC MOSFET chip of a B-phase bidirectional switch, a lower SiC MOSFET chip of a B-phase bidirectional switch, an upper SiC MOSFET chip of a C-phase bidirectional switch, and a lower SiC MOSFET chip of a C-phase bidirectional switch; The bonding wires include an A-phase bonding wire, a B-phase bonding wire, a C-phase bonding wire, an upper chip gate bonding wire of an A-phase bidirectional switch, a lower chip gate bonding wire of an A-phase bidirectional switch, an upper chip gate bonding wire of a B-phase bidirectional switch, a lower chip gate bonding wire of a B-phase bidirectional switch, an upper chip gate bonding wire of a C-phase bidirectional switch, and a lower chip gate bonding wire of a C-phase bidirectional switch; The plug-in terminal includes a P terminal, an A phase terminal, a B phase terminal, a C phase terminal, an A phase bidirectional switch upper tube gate terminal, an A phase bidirectional switch source terminal, an A phase bidirectional switch lower tube gate terminal, a B phase bidirectional switch upper tube gate terminal, a B phase bidirectional switch source terminal, a B phase bidirectional switch lower tube gate terminal, a C phase bidirectional switch upper tube gate terminal, a C phase bidirectional switch source terminal, and a C phase bidirectional switch lower tube gate terminal; The upper copper layer includes a P-pole copper layer, an A-pole copper layer, a B-pole copper layer, a C-pole copper layer, an A-phase bidirectional switch upper tube gate copper layer, an A-phase bidirectional switch source electrode copper layer, an A-phase bidirectional switch lower tube gate copper layer, a B-phase bidirectional switch upper tube gate copper layer, a B-phase bidirectional switch source electrode copper layer, a B-phase bidirectional switch lower tube gate copper layer, a C-phase bidirectional switch upper tube gate copper layer, a C-phase bidirectional switch source electrode copper layer, and a C-phase bidirectional switch lower tube gate copper layer; The P-pole copper layer takes the P-pole terminal as the central axis, and the upper SiC MOSFET chip of the A-phase bidirectional switch, the upper SiC MOSFET chip of the B-phase bidirectional switch, and the upper SiC MOSFET chip of the C-phase bidirectional switch are symmetrically arranged on the three edges of the P-pole copper layer, and the lower SiC MOSFET chip of the A-phase bidirectional switch, the lower SiC MOSFET chip of the B-phase bidirectional switch, and the lower SiC MOSFET chip of the C-phase bidirectional switch are respectively arranged on the A-pole copper layer, the B-pole copper layer, and the C-pole copper layer at an angle parallel to the edge line of the P-pole copper layer; The upper SiC MOSFET chip of the A-phase bidirectional switch is connected to the lower SiC MOSFET chip of the A-phase bidirectional switch by using the A-phase bonding wire, the upper SiC MOSFET chip of the B-phase bidirectional switch is connected to the lower SiC MOSFET chip of the B-phase bidirectional switch by using the B-phase bonding wire, and the upper SiC MOSFET chip of the C-phase bidirectional switch is connected to the lower SiC MOSFET chip of the C-phase bidirectional switch by using the C-phase bonding wire; The A-phase bonding wire, the B-phase bonding wire, and the C-phase bonding wire add a landing point in the process of connecting the upper and lower tube SiC MOSFET chips, so that the three groups of bonding wires are respectively connected to the A-phase bidirectional switch source copper layer, the B-phase bidirectional switch source copper layer, and the C-phase bidirectional switch source copper layer; The gate bonding lead of the upper tube chip of the A-phase bidirectional switch is connected to the gate of the upper tube of the A-phase bidirectional switch and the copper layer of the gate of the upper tube of the A-phase bidirectional switch; the gate bonding lead of the lower tube chip of the A-phase bidirectional switch is connected to the gate of the lower tube of the A-phase bidirectional switch and the copper layer of the gate of the lower tube of the A-phase bidirectional switch; the gate bonding lead of the upper tube chip of the B-phase bidirectional switch is connected to the gate of the upper tube of the B-phase bidirectional switch and the copper layer of the gate of the upper tube of the B-phase bidirectional switch; the gate bonding lead of the lower tube chip of the B-phase bidirectional switch is connected to the gate of the lower tube of the B-phase bidirectional switch and the copper layer of the gate of the lower tube of the B-phase bidirectional switch; the gate bonding lead of the upper tube chip of the C-phase bidirectional switch is connected to the gate of the upper tube of the C-phase bidirectional switch and the copper layer of the gate of the upper tube of the C-phase bidirectional switch; the gate bonding lead of the lower tube chip of the C-phase bidirectional switch is connected to the gate of the lower tube of the C-phase bidirectional switch and the copper layer of the gate of the lower tube of the C-phase bidirectional switch; The P terminal is led out from the center of the P-pole copper layer, and the A-phase terminal, the B-phase terminal, and the C-phase terminal are led out from the A-pole copper layer, the B-pole copper layer, and the C-pole copper layer, respectively, and are distributed symmetrically from the center; The A-phase bidirectional switch upper tube gate terminal, the A-phase bidirectional switch source terminal, and the A-phase bidirectional switch lower tube gate terminal are respectively led out from the A-phase bidirectional switch upper tube gate copper layer, the A-phase bidirectional switch source electrode copper layer, and the A-phase bidirectional switch lower tube gate copper layer; the B-phase bidirectional switch upper tube gate terminal, the B-phase bidirectional switch source terminal, and the B-phase bidirectional switch lower tube gate terminal are respectively led out from the B-phase bidirectional switch upper tube gate copper layer, the B-phase bidirectional switch source electrode copper layer, and the B-phase bidirectional switch lower tube gate copper layer; the C-phase bidirectional switch upper tube gate terminal, the C-phase bidirectional switch source terminal, and the C-phase bidirectional switch lower tube gate terminal are respectively led out from the C-phase bidirectional switch upper tube gate copper layer, the C-phase bidirectional switch source electrode copper layer, and the C-phase bidirectional switch lower tube gate copper layer; The A-phase bidirectional switch upper tube gate terminal, the A-phase bidirectional switch source terminal, the A-phase bidirectional switch lower tube gate terminal, the B-phase bidirectional switch upper tube gate terminal, the B-phase bidirectional switch source terminal, the B-phase bidirectional switch lower tube gate terminal, the C-phase bidirectional switch upper tube gate terminal, the C-phase bidirectional switch source terminal, and the C-phase bidirectional switch lower tube gate terminal are located at the edge of the copper-clad ceramic board as signal terminals.

2. The 3×1 type silicon carbide based bidirectional switch power module with low parasitic inductance according to claim 1 is characterized in that The SiC MOSFET chip is welded on the upper copper layer of the copper-clad ceramic board through a silver sintering process.

3. The 3×1 type silicon carbide based bidirectional switch power module with low parasitic inductance according to claim 1 is characterized in that The plug-in terminal comprises two parts, namely a copper terminal base and a copper terminal inserted into the copper terminal base.

4. The 3×1 type silicon carbide based bidirectional switch power module with low parasitic inductance according to claim 3 is characterized in that The copper terminal base is directly led out from the upper copper layer and serves as a position for inserting the copper terminal, and the lower end of the copper terminal is inserted into the copper terminal base.

5. The 3×1 type silicon carbide based bidirectional switch power module with low parasitic inductance according to claim 1, characterized in that The bonding wire is an aluminum bonding wire.

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