Micro-nanostructure transfer preparation method and its application

Abstract

The present invention provides a micro-nano structure transfer preparation method and application thereof, and relates to the field of optical devices. Specifically, the micro-nano structure transfer preparation method provided by the present invention is a micro-nano structure stripping process for transferring an exposed glue structure to a conventional or unconventional substrate and developing the exposed glue structure. The transfer preparation method can be completed by two methods, specifically, after preparing an auxiliary film, a glue structure, and a protective layer on a substrate, an intermediate dielectric layer is used to sequentially remove the excess film layer structure, and finally a conventional or unconventional substrate is used to bond the glue structure and remove the intermediate dielectric layer. The method provided by the present invention can be used to prepare meta-materials or micro-nano structures on unconventional substrates such as curved substrates and flexible substrates, and realize their applications in the fields of micro-nano optical devices, flexible devices, and integrated optoelectronic devices.

Description

Technical Field

[0001] The present invention relates to the field of optical devices, and in particular to a micro-nano structure transfer preparation method and application thereof. Background Art

[0002] Micro-nano preparation technology has been widely used in various fields such as advanced manufacturing, biomedicine, electronic equipment, automobiles, aerospace, new generation information technology, sensor technology, semiconductors, optics, etc. At present, conventional micro-nano technology can be divided into two categories: "top-down" and "bottom-up". Such as lithography, masking, etching, deposition coating, transfer, epitaxial growth, doping, etc. Although these technologies have reached maturity and can be used to prepare micro-nano structures and products with high yield, high resolution and low distortion on silicon-based semiconductors, the current micro-nano processing technology is limited to the processing and manufacturing of planes and conventional substrates, and is not suitable for curved surfaces with large curvature, flexible substrates and substrates of unconventional materials.

[0003] At the same time, a large number of optical systems currently require multiple lenses or super-lenses to be nested and combined into a lens group to form an optical system with specific functions. Compared with a single ordinary lens group and a single super-lens, the super-lens can be used to help the ordinary lens group to achieve functions such as diffraction-limited focusing and aberration elimination. The super-lens can also regulate the polarization and polarization of the light field. The lens group can bring a larger field of view to the super-lens, thereby obtaining better optical imaging or other applications. However, the new lens group formed by the nested combination of the lens group and the super-lens is still bloated in geometric size compared with a single lens and super-lens, and it is difficult to miniaturize and integrate. Summary of the invention

[0004] One of the technical problems to be solved by the present invention is how to generate micro-nano structures on the surfaces of unconventional substrates such as curved substrates, flexible / elastic substrates, etc.

[0005] In order to solve the above technical problems, the present invention provides a micro-nano structure transfer preparation method, the micro-nano structure transfer preparation method is a micro-nano structure peeling process in which the exposed glue structure is transferred to a conventional or unconventional substrate and developed, the conventional or unconventional substrate is selected from any one of a curved substrate, a flat substrate, a flexible substrate, and a rigid substrate, and the micro-nano structure transfer preparation method is completed by method one or method two, wherein method one comprises the following steps:

[0006] S1: preparing an auxiliary film on a substrate;

[0007] S2: preparing a glue structure on the auxiliary film and performing patterned exposure;

[0008] S3: preparing a protective layer on the exposed adhesive structure;

[0009] S4: preparing an intermediate dielectric layer on the protective layer;

[0010] S5: peeling off the substrate and auxiliary film to expose the adhesive structure;

[0011] S6: Bonding conventional or unconventional substrates and adhesive structures;

[0012] S7: removing the protective layer and the intermediate dielectric layer;

[0013] S8: Glue structure development, micro-nano structure transfer preparation is completed,

[0014] Method 2 includes the following steps:

[0015] SA: preparation of auxiliary film on substrate;

[0016] SB: preparation of protective layer on auxiliary membrane;

[0017] SC: Prepare the glue structure on the protective layer and perform patterned exposure;

[0018] SD: prepare the intermediate dielectric layer on the glue structure;

[0019] SE: Peel off the substrate, auxiliary film, and protective layer to expose the adhesive structure;

[0020] SF: Bonding conventional or unconventional substrates and adhesive structures;

[0021] SG: stripping the intermediate dielectric layer;

[0022] SH: The gel structure is developed and the micro-nanostructure transfer preparation is completed.

[0023] Micro-nano structures cannot be directly prepared on unconventional substrates such as curved substrates, flexible substrates, and special material substrates. Based on this, the present invention provides a new micro-nano structure transfer preparation method, namely: first preparing the micro-nano structure on a rigid substrate, and finally transferring the prepared micro-nano structure to the surface of an unconventional substrate such as a curved substrate, a flexible substrate, and a special material substrate, thereby realizing the generation of metamaterials or micro-nano structures on the surface of unconventional substrates.

[0024] Preferably, the base is a rigid substrate.

[0025] Preferably, the auxiliary film is selected from any one of a silver auxiliary film, an electron beam evaporation coating, a magnetron sputtering coating, an organic film, and an electrophoretic metal film.

[0026] In the technical solution provided by the present invention, the present invention first prepares a layer of auxiliary film on the substrate to reduce the adhesion between the adhesive structure and the substrate in the subsequent process so as to protect the integrity of the related adhesive structure.

[0027] Preferably, the material of the protective layer is selected from any one of a silver auxiliary film, an electron beam evaporation coating, a magnetron sputtering coating, an organic film, and an electrophoretic metal film.

[0028] In the technical solution provided by the present invention, the function of the protective layer is to protect the integrity of the adhesive structure and to improve the overall mechanical strength of the adhesive structure during the subsequent peeling process.

[0029] Preferably, the material of the glue structure is electronic glue or photoresist.

[0030] Preferably, the auxiliary film has a thickness greater than or equal to 50 nm.

[0031] In the technical solution provided by the present invention, there are strict requirements on the thickness of the auxiliary film. If the auxiliary film is too thin, an island effect will occur, resulting in the inability to fully form the auxiliary film, which may cause the subsequent adhesive structure to be unable to be completely peeled off. If the auxiliary film is too thick, the peeling time will be greatly prolonged. At the same time, the auxiliary film is too thick and creases will be produced during peeling, resulting in poor integrity of the adhesive structure.

[0032] Preferably, the intermediate medium layer is made of a viscous flexible material or an elastic material.

[0033] The second technical problem to be solved by the present invention is how to improve the integration of lenses and meta-lens systems and reduce their volumes.

[0034] In order to solve the above problems, the second aspect of the present invention provides a curved meta-lens, which is composed of a curved lens and a meta-lens arranged on the surface of the curved lens.

[0035] The third aspect of the present invention provides a method for preparing the curved metalens according to the second aspect, comprising the following steps:

[0036] Step 1: preparing a curved lens;

[0037] Step 2: Prepare a superlens and transfer the superlens to the surface of a curved lens using any of the micro-nanostructure transfer preparation methods described in the first aspect.

[0038] The curved metalens provided by the present invention prepares the metalens structure on the surface of an ordinary lens, subtracts the geometric space between optical elements while maintaining the performance of the metalens, and reduces the geometric size of the metalens. At the same time, in the above preparation method, the parameters between the curved lens and the metalens can be matched with each other during the design, which can reduce the subsequent debugging costs between the optical elements.

[0039] Compared with the prior art, the present invention has the following beneficial effects:

[0040] The micro-nano structure transfer preparation method provided by the present invention can prepare micro-nano structures on unconventional material substrates such as curved surfaces and flexible substrates, and can achieve high fidelity, cleanliness, and reduce the negative effects caused by shadow effects and topological effects. This technology can not only be integrated with technologies such as lithography and deposition, but is also suitable for technologies such as etching and nanoprinting, providing a new method for the production and manufacturing of advanced micro-nano technology products such as flexible electronic devices and curved meta-lenses. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 It is a flow chart of a method for preparing a micro-nano structure by transfer printing through method 1 in a specific embodiment of the present invention;

[0042] Figure 2 This is a flow chart of a method for preparing a micro-nano structure by transfer printing using method 2 in a specific embodiment of the present invention;

[0043] Figure 3 It is a schematic diagram of the structure of the substrate and the auxiliary film in step S1 and step SA of a specific embodiment of the present invention;

[0044] Figure 4 This is a schematic diagram of the structure of the glue structure, the auxiliary film, and the substrate in step S2 in a specific embodiment of the present invention;

[0045] Figure 5 It is a schematic diagram of the adhesive structure, protective layer, auxiliary film, and substrate structure after exposure in step SB and step SC of a specific embodiment of the present invention;

[0046] Figure 6 It is a schematic diagram of the structure of the protective layer, the adhesive structure after exposure, the auxiliary film, and the substrate in step S3 of a specific implementation method of the present invention;

[0047] Figure 7 This is a schematic diagram of the structure of the substrate, the auxiliary film, the adhesive structure, the protective layer, and the intermediate dielectric layer in step S4 of a specific implementation manner of the present invention;

[0048] Figure 8 This is a schematic diagram of the structure of the substrate, auxiliary film, protective layer, glue structure, and intermediate dielectric layer in step SD of a specific implementation method of the present invention;

[0049] Fig. 9 It is a structural schematic diagram of the intermediate dielectric layer, protective layer and adhesive structure of the substrate and the auxiliary film thickness peeled off in step S5 of a specific embodiment of the present invention;

[0050] Fig.10 It is a structural schematic diagram of peeling off the substrate, auxiliary film, protective layer, and adhesive structure after the intermediate dielectric layer in step SE of the specific implementation method of the present invention;

[0051] Fig.11It is a schematic diagram of the structure of the intermediate dielectric layer, the protective layer, the adhesive structure, and the conventional or unconventional substrate after bonding the conventional or unconventional substrate in step S6 of a specific embodiment of the present invention;

[0052] Fig.12 It is a schematic diagram of the structure of the intermediate dielectric layer, the adhesive structure, and the conventional or unconventional substrate after bonding the conventional or unconventional substrate in step SF of a specific embodiment of the present invention;

[0053] Fig.13 It is a schematic diagram of the glue structure, conventional or unconventional substrate structure after being processed by step S7, step S8 or after being processed by steps SG and SH in a specific embodiment of the present invention;

[0054] Fig.14 It is a schematic diagram of the structure of the curved metalens in a specific implementation manner of the present invention.

[0055] Description of reference numerals:

[0056] 1. Substrate; 2. Auxiliary film; 3. Adhesive structure; 4. Protective layer; 5. Intermediate dielectric layer; 6. Conventional or unconventional substrate; 71. Curved lens; 72. Super lens. DETAILED DESCRIPTION

[0057] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below. It should be noted that the following embodiments are only used to illustrate the implementation method and typical parameters of the present invention, and are not used to limit the parameter range described in the present invention. Reasonable changes derived therefrom are still within the scope of protection of the claims of the present invention.

[0058] It should be noted that the endpoints and any values ​​of the ranges disclosed in this article are not limited to the precise ranges or values, and these ranges or values ​​should be understood to include values ​​close to these ranges or values. For numerical ranges, the endpoint values ​​of each range, the endpoint values ​​of each range and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, and these numerical ranges should be regarded as specifically disclosed in this article.

[0059] Unless otherwise defined, all terms, symbols and other scientific terms used herein are intended to have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. In some cases, terms with commonly understood meanings are defined herein for the purpose of clarification or ease of reference, and such definitions herein should not be construed as indicating significant differences from the commonly understood meanings in the art. The technical methods described or cited herein are generally well understood by those skilled in the art and are adopted by conventional methods.

[0060] As described in the background technology, due to process limitations, the current preparation method of micro-nano structures cannot directly prepare micro-nano structures on unconventional substrates such as curved substrates and flexible substrates. Based on this, a specific embodiment of the present invention provides a transfer preparation method for a micro-nano structure, and the micro-nano structure transfer preparation method is a micro-nano structure peeling process in which the exposed glue structure 3 is transferred to a conventional or unconventional substrate 6 and developed. The conventional or unconventional substrate 6 is selected from any one of a curved substrate, a flat substrate, a flexible substrate, and a rigid substrate. The material of the glue structure 3 is photoresist or electronic glue. The micro-nano structure transfer preparation method is completed by method one or method two, wherein the preparation flow chart of method one is as shown in Figure 1 As shown, the specific steps include:

[0061] S1: preparing an auxiliary film 2 on a substrate 1;

[0062] S2: preparing a glue structure 3 on the auxiliary film 2 and performing patterned exposure;

[0063] S3: preparing a protective layer 4 on the exposed adhesive structure 3;

[0064] S4: preparing an intermediate dielectric layer 5 on the protective layer 4;

[0065] S5: peeling off the substrate 1 and the auxiliary film 2 to expose the adhesive structure 3;

[0066] S6: bonding the conventional or unconventional substrate 6 and the adhesive structure 3;

[0067] S7: removing the protective layer 4 and the intermediate dielectric layer 5;

[0068] S8: The adhesive structure 3 is developed, and the transfer preparation of the micro-nano structure is completed.

[0069] The preparation flow chart of method 2 is as follows: Figure 2 As shown, the specific steps include:

[0070] SA: preparing an auxiliary film 2 on a substrate 1;

[0071] SB: preparing a protective layer 4 on the auxiliary film 2;

[0072] SC: preparing a glue structure 3 on the protective layer 4 and performing patterned exposure;

[0073] SD: preparing an intermediate dielectric layer 5 on the glue structure 3;

[0074] SE: peel off the substrate 1, the auxiliary film 2, and the protective layer 4 to expose the adhesive structure 3;

[0075] SF: bonding the conventional or unconventional substrate 6 and the adhesive structure 3;

[0076] SG: stripping the intermediate dielectric layer 5;

[0077] SH: The adhesive structure 3 is developed and the micro-nanostructure transfer preparation is completed.

[0078] In the above embodiment, the difference between method 1 and method 2 is mainly that the positions of the protective layer 4 and the glue structure 3 are different relative to the auxiliary layer. When the shape fidelity is not high in the three-dimensional structure preparation process, method 2 can be used, because the flatness of the auxiliary layer is generally much greater than that of the protective layer 4. However, compared with method 1, the characteristic of method 2 is that all layers except the colloid are removed before bonding the target substrate, the preparation process is cleaner, and the impact on the integrity of the target substrate is reduced. For a flexible target substrate, the target substrate can be directly used instead of the intermediate medium to pick up the glue structure 3 to reduce the process steps and preparation time.

[0079] Specifically, see Figure 3 , Figure 3 Schematic diagram of the structure of the substrate 1 and the auxiliary film 2 in step S1 and step SA.

[0080] More specifically, in the above embodiment, the substrate 1 is a rigid substrate, and more specifically, the substrate 1 is a planar rigid silicon-based substrate.

[0081] More specifically, in the above embodiment, the auxiliary film 2 is selected from any one of a silver auxiliary film 2, an electron beam evaporation coating, a magnetron sputtering coating, an organic film, and an electrophoretic metal film.

[0082] In the technical solution provided by the specific embodiment of the present invention, the role of the auxiliary film 2 is to reduce the adhesion between the glue structure 3 and the substrate 1, thereby protecting the integrity of the glue structure 3, so that the photoresist and the electronic glue can be peeled off and transferred as a whole in the subsequent process. Therefore, in the above embodiment, there are strict requirements for the thickness and smoothness of the auxiliary film 2. Specifically, in the above embodiment, the thickness of the auxiliary film 2 is greater than or equal to 50nm. If the thickness of the auxiliary film 2 is less than 50nm, the island effect will appear if the thickness is too low, resulting in the inability to form a film. If the thickness of the auxiliary film 2 is too thick to reach the micron level, it will greatly increase the subsequent process cost and time for removing the auxiliary film 2. At the same time, the excessive thickness of the auxiliary film 2 will also cause the glue structure 3 to have tiny creases in the subsequent peeling process, resulting in the deterioration of the integrity of the glue structure 3.

[0083] See also Figure 4 , Figure 4 It is a schematic diagram of the structure of the glue structure 3, the auxiliary film 2, and the substrate 1 in step S2.

[0084] See also Figure 5 , Figure 5 It is a schematic diagram of the structure of the glue structure 3, the protective layer 4, the auxiliary film 2 and the substrate 1 after exposure in step SB and step SC.

[0085] See also Figure 6 , Figure 6 It is a schematic diagram of the structures of the protective layer 4, the exposed adhesive structure 3, the auxiliary film 2 and the substrate 1 in step S3.

[0086] Specifically, in the above embodiment, if the glue structure 3 is a photoresist, ultraviolet exposure is performed, and if the glue structure 3 is an electronic glue, electron beam exposure is performed. The effect of exposure is to cause the exposed part inside the glue structure 3 to undergo cross-linking to form a new substance for subsequent development to prepare a micro-nano structure.

[0087] Specifically, in the above embodiment, the role of the protective layer 4 is to protect the shape of the glue structure 3, increase the mechanical strength of the overall structure in the subsequent process, and make the glue structure 3 less likely to deform and bend, thereby causing the glue structure 3 to be broken and incomplete, creating the necessary conditions for the subsequent process to completely transfer the glue structure 3.

[0088] More specifically, in the above embodiment, the material of the protective layer 4 is preferably polyvinyl alcohol (PVA). PVA has good water solubility, which ensures that PVA can be quickly and completely removed in subsequent processes. In addition, flexible materials such as PAA and PMMA may also be selected.

[0089] See also Figure 7 , Figure 7 It is a schematic diagram of the structure of the substrate 1, the auxiliary film 2, the adhesive structure 3, the protective layer 4, and the intermediate dielectric layer 5 in step S4.

[0090] See also Figure 8 , Figure 8 It is a schematic structural diagram of the substrate 1, the auxiliary film 2, the protective layer 4, the glue structure 3, and the intermediate dielectric layer 5 in step SD.

[0091] Specifically, in the above embodiment, the role of the intermediate dielectric layer 5 is to ensure that the subsequent stripping of the auxiliary layer and the protective layer 4 can be more convenient and quick.

[0092] More specifically, in the above embodiment, the material of the intermediate medium layer 5 is most preferably PDMS. PDMS itself has adhesion. By bonding PDMS and the protective layer 4 and applying pressure, the overall structure can be transferred to PDMS. At the same time, PDMS can act as a temporary substrate. In this step, the original base 1 can be directly removed.

[0093] See also Fig. 9 , Fig. 9 It is a schematic structural diagram of the intermediate dielectric layer 5 , the protective layer 4 , and the adhesive structure 3 after peeling off the substrate 1 and the auxiliary film 2 in step S5 .

[0094] See also Fig.10 , Fig.10It is a schematic structural diagram of the adhesive structure 3 and the intermediate dielectric layer 5 after the substrate 1, the auxiliary film 2, and the protective layer 4 are peeled off in step SE.

[0095] Specifically, in the above-mentioned embodiment, according to different types of the auxiliary film 2 , the stripping method of the auxiliary film 2 may be wet etching with a phosphoric acid solution, mechanical stripping, or the like.

[0096] See also Fig.11 , Fig.11 It is a schematic diagram of the structure of the intermediate dielectric layer 5, the protective layer 4, the adhesive structure 3, and the conventional or unconventional substrate 6 after the conventional or unconventional substrate 6 is bonded in step S6.

[0097] See also Fig.12 , Fig.12 It is a schematic diagram of the structure of the intermediate dielectric layer 5, the adhesive structure 3, and the conventional or unconventional substrate 6 after bonding the conventional or unconventional substrate 6 in step SF.

[0098] Specifically, in the above embodiment, before bonding, oxygen ion bombardment can be used to change the surface properties of the conventional or unconventional substrate 6 from hydrophobic to hydrophilic, thereby increasing the surface adhesion and allowing the glue structure 3 to fit tightly with the new substrate. Of course, for special substrates that are inherently sticky, direct bonding can be performed.

[0099] See also Fig.13 , Fig.13 It is a schematic diagram of the structure of the glue structure 3 and the conventional or unconventional substrate 6 after the intermediate dielectric layer 5 and the protective layer 4 are peeled off in step S7 and developed in step S8.

[0100] Fig.13 It can also be a schematic diagram of the structure of the glue structure 3 and the conventional or unconventional substrate 6 after the intermediate dielectric layer 5 is peeled off in step SG and developed in step SH.

[0101] Specifically, in the above embodiment, the intermediate dielectric layer 5 and the protective layer 4 can be directly peeled off, or can be dissolved and removed using a solvent such as water. After removing the intermediate dielectric layer 5 and the protective layer 4, the pattern structure preset by the exposure can be revealed by developing with a developer, and finally the transfer preparation of the micro-nano structure to the conventional or unconventional substrate 6 is completed.

[0102] Furthermore, another embodiment of the present invention provides a curved meta-lens made by the aforementioned micro-nano structure transfer preparation method, wherein the structure of the curved meta-lens is as follows: Fig.14 As shown, it is composed of a curved lens 71 and a plurality of super lenses 72 arranged on the surface of the curved lens 71. The curved meta lens can reduce the geometric size of the lens group while ensuring the unchanged lens performance, thereby realizing the miniaturization and integration of the lens group.

[0103] More specifically, in the above embodiment, when the surface curvature of the curved lens 71 is large, a multi-time and multi-angle preparation method can be used to transfer the superlens 72 to the curved lens 71, thereby reducing the difficulty of preparing the curved meta-lens and improving the product yield.

[0104] The technical solution of the present invention is further described below through specific implementation methods.

[0105] Example 1

[0106] Micro-nano structure transfer preparation method using method 1

[0107] S1: Electron beam evaporation coating was performed on a 1.5*1.5 cm silicon wafer to prepare a uniform silver film with a thickness of about 150 nm;

[0108] S2: Spin-coating a photoresist on the silver film and performing patterning, wherein the photoresist is S1805 positive photoresist, and the spin-coating parameters are 500 r / min for 10 s, then 4000 r / min for 45 s, and then preheating at 115° C. for 60 s to prepare a uniform photoresist film with a thickness of 1 μm;

[0109] S3: Contact mask exposure is performed under UV lithography, and the exposure time is 6s;

[0110] S4: Spin coating a PVA solution on the exposed photoresist surface to prepare a PVA protective layer, using a 12 wt % PVA aqueous solution for spin coating, the spin coating parameter is 1000 r / min, and then heating and drying to form a PVA film, the heating parameters are temperature 60° C., time 5 min;

[0111] S5: Use PDMS with a size of 2cm*2cm*3mm to adhere to the PVA protective layer and peel off the silicon wafer;

[0112] S6: removing the silver film using a phosphoric acid solution and washing the remaining phosphoric acid solution with deionized water;

[0113] S7: performing oxygen ion bombardment treatment on the curved ITO glass for 10 minutes, and laminating the photoresist treated in step S6 to the curved ITO glass for 3 hours;

[0114] S8: Manually peel off the PDMS. At this time, the photoresist and PVA protective layer remain on the curved ITO glass. Soak it in deionized water for 1 minute to remove the PVA protective layer. Then put the remaining structure into a positive developer and use the developer to develop the remaining structure. The transfer preparation of the micro-nano structure is completed.

[0115] Example 2

[0116] Micro-nano structure transfer preparation method using method 2

[0117] SA: Electron beam evaporation was performed on a 1.5*1.5 cm silicon wafer to prepare a uniform silver film with a thickness of about 150 nm as an auxiliary film;

[0118] SB: Spin coating a 12 wt% PVA solution on the prepared sample with silver film in a spin coater at a spin coating parameter of 1000 r / min, and heat and dry at 60°C for 5 min to prepare a PVA protective layer;

[0119] SC: A uniform 1.15 μm thick az5214 positive photoresist was prepared on the PVA protective layer according to the following parameters: 500 r / min, 10 s, 4000 r / min, 45 s, preheating at 95 °C, 60 s and contact mask exposure was performed under a UV lithography machine;

[0120] SD: PDMS with a size of 2cm*2cm*3mm is attached to the surface of photoresist az5214;

[0121] SE: Mechanically peel off the silicon wafer, etch the auxiliary film 2 using phosphoric acid solution, and dissolve the PVA protective layer with deionized water to expose the glue structure;

[0122] SF: 3*3cm quartz glass is treated with oxygen ion bombardment for about 10 minutes, and the PDMS with photoresist and the quartz glass bombarded with oxygen ions are bonded together. After bonding, they are placed in a drying oven and heated at 50°C.

[0123] SG: mechanical exfoliation of PDMS;

[0124] SH: The photoresist is developed in a positive developer and the micro-nano structure transfer preparation is completed.

[0125] Example 3

[0126] Metalens preparation

[0127] The designed planar meta-lens shape is transferred to a photoresist through exposure, and then the photoresist is transferred to a chalcogenide curved lens and developed.

[0128] A layer of chromium-aluminum composite film is prepared on the photoresist by coating technology as a hard mask, and then the structure is prepared on the chalcogenide lens by etching in an ICP plasma etcher. CF4 and CHF gases are used for etching, with flow rates of 10 sccm and 20 sccm respectively, and the ICP power is 100W.

[0129] The residual photoresist was dissolved using NMP (N-methylpyrrolidone), and then the sample was cleaned and dried to prepare a meta-lens with a micro-nano structure on the curved lens.

[0130] Although the disclosure is disclosed as above, the protection scope of the disclosure is not limited thereto. Those skilled in the art can make various changes and modifications without departing from the spirit and scope of the disclosure, and these changes and modifications will fall within the protection scope of the present invention.

Claims

1. A micro-nano structure transfer preparation method, characterized in that: The micro-nano structure transfer preparation method is a micro-nano structure peeling process in which the exposed glue structure (3) is transferred to a conventional or unconventional substrate (6) and developed, wherein the conventional or unconventional substrate (6) is selected from any one of a curved substrate, a flat substrate, a flexible substrate, and a rigid substrate. The micro-nano structure transfer preparation method is completed by method one or method two, wherein method one comprises the following steps: S1: preparing an auxiliary film (2) on a substrate (1); S2: preparing a glue structure (3) on the auxiliary film (2) and performing patterned exposure; S3: preparing a protective layer (4) on the exposed adhesive structure (3); S4: preparing an intermediate dielectric layer (5) on the protective layer (4); S5: peeling off the substrate (1) and the auxiliary film (2) to expose the adhesive structure (3); S6: bonding a conventional or unconventional substrate (6) and an adhesive structure (3); S7: removing the protective layer (4) and the intermediate dielectric layer (5); S8: The gel structure (3) is developed and the transfer preparation of the micro-nanostructure is completed; Method 2 includes the following steps: SA: preparing an auxiliary film (2) on a substrate (1); SB: preparing a protective layer (4) on the auxiliary film (2); SC: preparing a glue structure (3) on a protective layer (4) and performing patterned exposure; SD: preparing an intermediate dielectric layer (5) on the glue structure (3); SE: peeling off the substrate (1), auxiliary film (2), and protective layer (4) to expose the adhesive structure (3); SF: bonding a conventional or unconventional substrate (6) and an adhesive structure (3); SG: stripping off the intermediate dielectric layer (5); SH: The gel structure (3) is developed and the micro-nanostructure transfer preparation is completed.

2. The micro-nanostructure transfer preparation method according to claim 1, characterized in that: The base (1) is a rigid substrate.

3. The micro-nano structure transfer preparation method according to claim 1, characterized in that: The material of the auxiliary film (2) is selected from any one of electron beam evaporation coating, magnetron sputtering coating, and electrophoretic metal film.

4. The micro-nano structure transfer preparation method according to claim 1, characterized in that: The material of the protective layer (4) is selected from any one of electron beam evaporation coating, magnetron sputtering coating, and electrophoretic metal film.

5. The micro-nanostructure transfer preparation method according to claim 1, characterized in that: The material of the glue structure (3) is electronic glue or photoresist.

6. The micro-nano structure transfer preparation method according to claim 1, characterized in that: The thickness of the auxiliary film (2) is greater than or equal to 50 nm.

7. The micro-nano structure transfer preparation method according to claim 1, characterized in that: The material of the intermediate medium layer (5) is a viscous flexible material or an elastic material.

8. An application of the micro-nanostructure transfer preparation method according to any one of claims 1 to 7, characterized in that: The micro-nanostructure transfer preparation method is used to prepare curved meta-lenses.

9. The use according to claim 8, characterized in that The curved surface meta-lens consists of a curved surface lens (71) and a plurality of meta-lenses (72) arranged on the surface of the curved surface lens (71).

10. The use according to claim 9, characterized in that The method for preparing the curved metalens comprises the following steps: Step 1: preparing a curved lens (71); Step 2: Prepare a superlens (72) and use the micro-nanostructure transfer preparation method described in any one of claims 1 to 7 to transfer the superlens (72) to the surface of the curved lens (71).

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