On-chip temperature sensor based on enhanced positive temperature coefficient voltage generation structure

Abstract

The present invention discloses an on-chip temperature sensor based on an enhanced positive temperature coefficient voltage generation structure, comprising: a circuit for outputting a zero temperature coefficient reference voltage V REF and positive temperature coefficient voltage V PTAT The first part of the circuit is used to enhance the zero temperature coefficient reference voltage V REF The second part of the circuit is used to enhance the driving capability of the positive temperature coefficient voltage V PTAT The third part of the circuit is used to enhance the output voltage V of the third part of the circuit PTAT_E The invention comprises a fourth circuit for outputting a zero temperature coefficient bias current; a fifth circuit for outputting a zero temperature coefficient bias current; and a sixth circuit for on-chip temperature detection. The invention optimizes the slope of a traditional positive temperature coefficient voltage and expands the amplitude range to generate an optimized enhanced positive temperature coefficient voltage under the condition of constant temperature, and performs on-chip temperature detection of the chip by controlling an analog-to-digital converter.

Description

Technical Field

[0001] The present invention relates to the technical field of circuit electronic design, and in particular to an on-chip temperature sensor based on an enhanced positive temperature coefficient voltage generation structure. Background Art

[0002] With the rapid development of modern integrated circuit technology, the requirements for circuit performance are getting higher and higher, the power consumption of chips is increasing, and the impact of chip temperature on chip performance and reliability is becoming more and more significant. Temperature has become an important factor affecting chip performance and reliability. Therefore, in the field of integrated circuit design, temperature sensors are a key component and are widely used in a variety of electronic systems to ensure the stability and reliability of electronic circuit systems.

[0003] Among them, the traditional VPTAT (Voltage Proportional to Absolute Temperature) technology is a commonly used circuit solution. VPTAT technology mainly uses a relatively stable reference voltage and a positive temperature coefficient voltage to detect the temperature change of the chip. By constructing a circuit system, the characteristics of the electronic devices (such as linear resistors and bipolar transistors) are linearly related to the temperature. By measuring the output voltage or current related to the circuit, the temperature of the chip can be inferred. Due to the low cost and high detection accuracy of this technology, it is widely used in chip temperature detection.

[0004] However, with the continuous advancement of integrated circuit technology, especially in the deep submicron and nano era, the demand for lower power consumption, smaller area and higher integration is growing, which makes the design of traditional temperature detection circuits face many challenges. Although the traditional VPTAT temperature detection circuit has met the previous chip temperature detection needs to a certain extent, it still has many shortcomings, such as large circuit size, low temperature sensitivity, narrow temperature measurement range, high required circuit complexity, low integration, and susceptibility to power supply voltage fluctuations. Therefore, the development of an efficient, accurate, simple and reliable chip temperature detection circuit that can provide a wider temperature measurement range, while reducing the required circuit complexity and improving the circuit integration, and can be compatible with the silicon-based process platform to adapt to the evolving advanced integrated circuit technology, has important and significant practical significance and very broad application prospects. Summary of the invention

[0005] Technical purpose: In view of the defects in the prior art, the present invention discloses an on-chip temperature sensor based on an enhanced positive temperature coefficient voltage generation structure, which optimizes the traditional positive temperature coefficient voltage slope and expands the amplitude range to generate an optimized enhanced positive temperature coefficient voltage under the condition of unchanged temperature, expands the voltage value corresponding to each degree of temperature, and realizes the use of a low-precision analog-to-digital converter to effectively identify the voltage value changes corresponding to temperature fluctuations, and realizes the detection of small temperature fluctuations using a low-precision analog-to-digital converter, thereby enhancing the circuit's sensitivity to temperature changes and expanding the circuit's detection range. The low-precision analog-to-digital converter is controlled by the generated zero temperature coefficient reference voltage and the enhanced positive temperature coefficient voltage to perform on-chip temperature detection of the chip.

[0006] Technical solution: In order to achieve the above technical objectives, the present invention adopts the following technical solution.

[0007] On-chip temperature sensor based on enhanced positive temperature coefficient voltage generation structure, including:

[0008] Used to output zero temperature coefficient reference voltage V REF and positive temperature coefficient voltage V PTAT The first part of the circuit;

[0009] Used to enhance the zero temperature coefficient reference voltage V REF The second circuit is used to receive the zero temperature coefficient reference voltage V output by the first circuit. REF 、The current I output by the fifth circuit Z1,1 , and the output voltage V REF_BUF ;

[0010] Used to enhance the positive temperature coefficient voltage V PTAT The third circuit is used to receive the voltage V output by the second circuit. REF_BUF , the positive temperature coefficient voltage V output by the first part of the circuit PTAT 、The current I output by the fifth circuit Z1,2 , and outputs an enhanced positive temperature coefficient voltage V PTAT_E ;

[0011] Used to enhance the output voltage V of the third circuit PTAT_E The fourth circuit is used to receive the enhanced positive temperature coefficient voltage V output by the third circuit. PTAT_E 、The current I output by the fifth circuit Z1,3 , and the output voltage V PTAT_E_BUF ;

[0012] The fifth circuit is used to output a zero temperature coefficient bias current, and the fifth circuit is used to receive the zero temperature coefficient reference voltage V output by the first circuit.REF , the output is the current I output from the 4 zero temperature coefficient bias current output ports Z1,1 —I Z1,4 ;

[0013] The sixth circuit is used for on-chip temperature detection. The sixth circuit is used to receive the voltage V output by the fourth circuit. PTAT_E_BUF , the voltage V output by the second circuit REF_BUF 、The current I output by the fifth circuit Z1,4 , output on-chip temperature code.

[0014] Furthermore, the second circuit comprises a first amplifier, the positive input terminal of the first amplifier receives the zero temperature coefficient reference voltage V output by the first circuit. REF The negative input terminal of the first amplifier is connected to the output terminal of the first amplifier, and the current input terminal I B Receive the current I output by the fifth circuit Z1,1 , the output voltage V of the output terminal of the first amplifier REF_BUF .

[0015] Furthermore, the third circuit includes an operational amplifier, the positive input terminal of the operational amplifier receives the positive temperature coefficient voltage V output by the first circuit. PTAT The negative input terminal of the op amp receives the voltage V output by the second circuit through the first input resistor. REF_BUF The negative input terminal of the op amp is connected to the output terminal of the op amp through the first feedback resistor, and the current input terminal I B Receive the current I output by the fifth circuit Z1,2 , the output voltage V PTAT_E .

[0016] Furthermore, the fourth circuit includes a second amplifier, the positive input terminal of the second amplifier receives the voltage V output by the third circuit. PTAT_E The negative input terminal of the second amplifier receives the voltage V output by the second circuit through the second input resistor. REF_BUF The negative input terminal of the second amplifier is connected to the output terminal of the second amplifier through the second feedback resistor, and the current input terminal I B Receive the current I output by the fifth circuit Z1,3 , the output voltage V of the output terminal of the second amplifier PTAT_E_BUF .

[0017] Furthermore, the fifth circuit is a multi-output current mirror, whose input terminal is connected to the zero temperature coefficient reference voltage output terminal V of the first circuit through a buffer. REF , the output end of the multi-output current mirror is 4 zero temperature coefficient bias current output ports, the output current IZ1,1 —I Z1,4 .

[0018] Furthermore, the sixth circuit includes an analog-to-digital converter, which receives the voltage V output by the fourth circuit. PTAT_E_BUF , the voltage V output by the second circuit REF_BUF 、The current I output by the fifth circuit Z1,4 , output on-chip temperature code.

[0019] Furthermore, the working process of the on-chip temperature sensor includes a stable working stage and a temperature detection output stage, and the steps include:

[0020] 1) When the chip is powered on, the first part of the circuit works to generate a reference voltage V REF With positive temperature coefficient voltage V PTAT ;

[0021] 2) Determine whether the circuit generates a reference voltage V at this time REF With positive temperature coefficient voltage V PTAT ;

[0022] 3) If the circuit cannot generate the reference voltage V REF With positive temperature coefficient voltage V PTAT , then jump back to step 1) until the first part of the circuit can generate the reference voltage V REF With positive temperature coefficient voltage V PTAT ;

[0023] 4) If the circuit can generate a reference voltage V REF With positive temperature coefficient voltage V PTAT , a stable reference voltage and positive temperature coefficient voltage are generated, and the chip enters a stable working state;

[0024] 5) Entering the temperature detection output stage 1: the fifth part generates a bias current that is not related to the absolute temperature to provide it to the second circuit, the third circuit, the fourth circuit, and the sixth circuit modules;

[0025] 6) Entering the temperature detection output stage 2: The first circuit and the second circuit generate a reference voltage V that is not related to the absolute temperature. REF_BUF The first circuit, the third circuit, and the fourth circuit generate a voltage V that is positively correlated with the absolute temperature. PTAT_E_BUF As an input control voltage, to provide to the sixth circuit analog-to-digital converter circuit;

[0026] 7) The sixth circuit analog-to-digital converter circuit generates and outputs the on-chip temperature code to complete the on-chip temperature detection.

[0027] Beneficial effects: The present invention can generate an optimized enhanced positive temperature coefficient voltage by optimizing the slope of the traditional positive temperature coefficient voltage and expanding the amplitude range through the third part circuit under the condition of constant temperature, expand the voltage value corresponding to each degree of temperature, realize that the voltage value change corresponding to the temperature fluctuation can be effectively identified by using a low-precision analog-to-digital converter, realize that the detection of small temperature fluctuations can also be realized by using a low-precision analog-to-digital converter, enhance the sensitivity of the circuit to temperature changes, expand the detection range of the circuit, control the analog-to-digital converter by generating a zero temperature coefficient reference voltage and an enhanced positive temperature coefficient voltage to perform on-chip temperature detection of the chip, and control the overall current to not exceed 370μA at room temperature (27°C) by accurately designing each circuit module, and selecting low-voltage devices (3.3V and below 1.2V), and selecting a low-precision analog-to-digital converter, which can effectively reduce the power consumption and circuit area of ​​the analog-to-digital converter, can control the overall power consumption at a lower threshold, improve the integration of the circuit design, and reduce the total area of ​​the circuit. A high-integration, low-power, wide detection range and simple structure on-chip temperature detection sensor design that can be applied under different temperature conditions is realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 A schematic diagram of the structure of an on-chip temperature sensor based on an enhanced positive temperature coefficient voltage generation structure;

[0029] Figure 2 yes Figure 1 The second part of the circuit buffer schematic diagram;

[0030] Figure 3 yes Figure 1 The fourth part of the circuit buffer schematic diagram;

[0031] Figure 4 yes Figure 1 The zero temperature coefficient reference voltage (V REF ), traditional positive temperature coefficient voltage (traditional V PTAT ) and enhanced positive temperature coefficient voltage (enhanced V PTAT ) Schematic diagram of the change with temperature;

[0032] Figure 5 It is a flow chart of the working principle of the present invention. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0034] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0035] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. At the same time, in the description of this application, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0036] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0037] In the description of this application, it should also be noted that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0038] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. Example

[0039] like Figure 1 As shown, the present invention provides an on-chip temperature sensor based on an enhanced positive temperature coefficient voltage generation structure, comprising:

[0040] The first circuit 100 includes a bandgap reference for outputting a zero temperature coefficient reference voltage VREF and positive temperature coefficient voltage V PTAT ;

[0041] The second circuit 200 includes a buffer for receiving the zero temperature coefficient reference voltage V output by the first circuit 100. REF , the current I output by the fifth circuit 500 Z1,1 , and the output voltage V REF_BUF The second circuit 200 is used to enhance the zero temperature coefficient reference voltage V REF driving ability;

[0042] The third circuit 300 includes an operational amplifier for receiving the voltage V output by the second circuit 200. REF_BUF , the positive temperature coefficient voltage V output by the first circuit 100 PTAT , the current I output by the fifth circuit 500 Z1,2 , and outputs an enhanced positive temperature coefficient voltage V PTAT_E The third circuit 300 is used to enhance the positive temperature coefficient voltage V PTAT ;

[0043] The fourth circuit 400 includes a buffer for receiving the enhanced positive temperature coefficient voltage V output by the third circuit 300. PTAT_E , the current I output by the fifth circuit 500 Z1,3 , and the output voltage V PTAT_E_BUF The fourth circuit 400 is used to enhance the output voltage V of the third circuit 300. PTAT_E ;

[0044] The fifth circuit 500 includes a multi-output current mirror for receiving the voltage V output by the first circuit 100. REF , the current I output by the fifth circuit 500 Z1,4 , the output is the current I output from the 4 zero temperature coefficient bias current output ports Z1,1 —I Z1,4 ;

[0045] The sixth circuit 600 includes an analog-to-digital converter for receiving the voltage V output by the fourth circuit 400. PTAT_E_BUF , the voltage V output by the second circuit 200 REF_BUF , the current I output by the fifth circuit (500) Z1,4 , output the on-chip temperature code to realize the on-chip temperature detection function of the chip.

[0046] In the first part of the circuit 100, the bandgap reference is designed by the existing "bandgap" technology, and can output two reference voltages with zero temperature coefficient and traditional positive temperature coefficient. The two reference voltages are used for subsequent on-chip temperature detection as initial reference voltages. The zero temperature coefficient reference voltage and the positive temperature coefficient voltage in the present invention have the same voltage value of 1.2V at room temperature of 27°C. It should be noted that the size and temperature coefficient of the reference voltage at room temperature can be adjusted according to actual design requirements.

[0047] As attached Figure 2 As shown, the second circuit 200 includes a first amplifier 201, which is used as a buffer; the positive input terminal of the first amplifier 201 receives the zero temperature coefficient reference voltage V output by the first circuit 100. REF The negative input terminal of the first amplifier 201 is connected to the output terminal of the first amplifier 201, and the current input terminal I of the first amplifier 201 is connected to the output terminal of the first amplifier 201. B Receive the current I output by the fifth circuit 500 Z1,1 , the output voltage V of the output terminal of the first amplifier 201 REF_BUF ; Output voltage V REF_BUF Relative to the zero temperature coefficient reference voltage V REF It has stronger driving capability to drive subsequent related circuit modules to ensure the accuracy and stability of related circuit functions and signals.

[0048] The third circuit 300 includes an operational amplifier 301, the positive input terminal of which receives the positive temperature coefficient voltage V output by the first circuit 100. PTAT The negative input terminal of the operational amplifier 301 receives the voltage V output by the second circuit 200 through the first input resistor 302. REF_BUF The negative input terminal of the operational amplifier 301 is connected to the output terminal of the operational amplifier 301 through the first feedback resistor 303, and the current input terminal I B Receive the current I output by the fifth circuit 500 Z1,2 , the output voltage V of the output terminal of the op amp 301 PTAT_E By controlling the resistance of the first input resistor 302 and the first feedback resistor 303 and accurately designing the operational amplifier 301 to enhance the positive temperature coefficient voltage, the output voltage V is obtained. PTAT_E ;

[0049] As attached Figure 3 As shown, the fourth circuit 400 includes a second amplifier 401, which serves as a buffer; the positive input terminal of the second amplifier 401 receives the voltage V output by the third circuit 300. PTAT_E The negative input terminal of the second amplifier 401 receives the voltage V output by the second circuit 200 through the second input resistor 402.REF_BUF The negative input terminal of the second amplifier 401 is connected to the output terminal of the second amplifier 401 through the second feedback resistor 403. The current input terminal I B Receive the current I output by the fifth circuit 500 Z1,3 , the output voltage V of the output terminal of the second amplifier 401 PTAT_E_BUF The fourth circuit 400 is used to enhance the voltage V output by the third circuit 300. PTAT_E According to the actual needs, the resistance of the second input resistor 402 and the second feedback resistor 403 are precisely designed and the second amplifier 401 is precisely designed, so that the voltage V output by the third circuit 300 can be PTAT_E It has stronger driving capability and follows the amplitude range required by the actual circuit to drive and control the sixth circuit 600, ensuring that the voltage V PTAT_E The signal is accurate and stable.

[0050] The fifth circuit 500 is a multi-output current mirror, whose input terminal is connected to the zero temperature coefficient reference voltage output terminal V of the first circuit 100. REF , the output end of the multi-output current mirror is 4 zero temperature coefficient bias current output ports I Z1,1 —I Z1,4 , which are respectively the second part circuit 200, the third part circuit 300, the fourth part circuit 400, and the sixth part circuit 600. The number and amplitude of the output current ports can be determined according to the zero temperature coefficient bias current required by the actual circuit, and can be any integer and the amplitude required by the design.

[0051] In the sixth circuit 600, the analog-to-digital converter is controlled by a zero temperature coefficient reference voltage and an enhanced positive temperature coefficient voltage input, that is, it receives the voltage V output by the fourth circuit 400. PTAT_E_BUF , the voltage V output by the second circuit 200 REF_BUF , the current I output by the fifth circuit 500 Z1,4 , output the on-chip temperature code to realize the on-chip temperature detection function of the chip.

[0052] Figure 4 The figure shows the trend relationship between the three reference voltages involved in the present invention and the temperature, which are the zero temperature coefficient reference voltage V output by the first part circuit 100 of the bandgap reference structure and the reference voltage V REF and the traditional positive temperature coefficient voltage traditional V PTAT , and the output end enhanced positive temperature coefficient voltage enhanced V of the third part circuit 300 composed of the enhanced positive temperature coefficient voltage output generation structure PTATSchematic diagram of temperature change. The three reference voltages are all 1.2V at room temperature 27°C. The present invention optimizes the slope of the traditional positive temperature coefficient voltage and expands the amplitude range to generate an enhanced positive temperature coefficient voltage under the condition of constant temperature.

[0053] like Figure 5 As shown, the working process of the on-chip temperature sensor includes a stable working stage and a temperature detection output stage, and the steps include:

[0054] 1) When the chip is powered on, the first circuit 100 works to generate a reference voltage V REF With positive temperature coefficient voltage V PTAT ;

[0055] 2) Determine whether the circuit generates a reference voltage V at this time REF With positive temperature coefficient voltage V PTAT ;

[0056] 3) If the circuit cannot generate the reference voltage V REF With positive temperature coefficient voltage V PTAT , then jump back to step 1) until the first circuit 100 can generate a reference voltage V REF With positive temperature coefficient voltage V PTAT ;

[0057] 4) If the circuit can generate a reference voltage V REF With positive temperature coefficient voltage V PTAT , a stable reference voltage and positive temperature coefficient voltage are generated, and the chip enters a stable working state;

[0058] 5) Entering the temperature detection output stage 1: the fifth part 500 generates a bias current that is not related to the absolute temperature, and provides it to the second part circuit 200, the third part circuit 300, the fourth part circuit 400, and the sixth part circuit 600 modules;

[0059] 6) Entering temperature detection output stage 2: the first circuit 100 and the second circuit 200 generate a reference voltage V that is not related to absolute temperature. REF_BUF The first circuit 100, the third circuit 300, and the fourth circuit 400 generate a voltage V positively correlated with the absolute temperature. PTAT_E_BUF As an input control voltage, to provide to the sixth part circuit 600 analog-to-digital converter circuit;

[0060] 7) The sixth circuit 600 analog-to-digital converter circuit generates and outputs an on-chip temperature code to complete on-chip temperature detection.

[0061] An enhanced positive temperature coefficient voltage generation structure and on-chip temperature sensor of the present invention can optimize the traditional positive temperature coefficient voltage slope and expand the amplitude range to generate an optimized enhanced positive temperature coefficient voltage under the condition of unchanged temperature. By generating a zero temperature coefficient reference voltage and the enhanced positive temperature coefficient voltage as input signals to control an analog-to-digital converter to perform on-chip temperature detection, an on-chip temperature detection sensor design with high integration, low power consumption, wide range and simple structure under different temperature conditions is realized.

[0062] Because the present invention uses a silicon-based process platform, the present invention has a wide range of applications and is suitable for integrated circuit chips, radio frequency chips, and other electronic circuits and systems.

[0063] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

[0064] It will be apparent to those skilled in the art that the present application is not limited to the details of the exemplary embodiments described above, and that the present application can be implemented in other specific forms without departing from the spirit or essential features of the present application. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended that all changes falling within the meaning and scope of the equivalent elements of the claims be included in the present application. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. An on-chip temperature sensor based on an enhanced positive temperature coefficient voltage generation structure, characterized in that: include: Used to output zero temperature coefficient reference voltage V REF and positive temperature coefficient voltage V PTAT A first part of the circuit (100); Used to enhance the zero temperature coefficient reference voltage V REF The second circuit (200) is used to receive the zero temperature coefficient reference voltage V output by the first circuit (100). REF , the current I output by the fifth circuit (500) Z1,1 , and the output voltage V REF_BUF ; Used to enhance the positive temperature coefficient voltage V PTAT The third circuit section (300) is used to receive the voltage V output by the second circuit section (200). REF_BUF , the positive temperature coefficient voltage V output by the first circuit (100) PTAT , the current I output by the fifth circuit (500) Z1,2 , and outputs an enhanced positive temperature coefficient voltage V PTAT_E ; Used to enhance the output voltage V of the third circuit (300) PTAT_E The fourth circuit (400) is used to receive the enhanced positive temperature coefficient voltage V output by the third circuit (300). PTAT_E , the current I output by the fifth circuit (500) Z1,3 , and output voltage V PTAT_E_BUF ; A fifth circuit (500) for outputting a zero temperature coefficient bias current, the fifth circuit (500) for receiving a zero temperature coefficient reference voltage V output by the first circuit (100) REF , the output is the current I output from the 4 zero temperature coefficient bias current output ports Z1,1 —I Z1,4 ; A sixth circuit (600) for on-chip temperature detection, the sixth circuit (600) being used to receive a voltage V output by the fourth circuit (400) PTAT_E_BUF , the voltage V output by the second circuit (200) REF_BUF , the current I output by the fifth circuit (500) Z1,4 , output on-chip temperature code.

2. The on-chip temperature sensor based on the enhanced positive temperature coefficient voltage generation structure according to claim 1, characterized in that: The second circuit (200) comprises a first amplifier (201), wherein a positive input terminal of the first amplifier (201) receives a zero temperature coefficient reference voltage V output by the first circuit (100). REF The negative input terminal of the first amplifier (201) is connected to the output terminal of the first amplifier (201), and the current input terminal I B Receive the current I output by the fifth circuit (500) Z1,1 , the output voltage V at the output terminal of the first amplifier (201) REF_BUF .

3. The on-chip temperature sensor based on the enhanced positive temperature coefficient voltage generation structure according to claim 1, characterized in that: The third circuit (300) comprises an operational amplifier (301), the positive input terminal of the operational amplifier (301) receiving the positive temperature coefficient voltage V output by the first circuit (100). PTAT The negative input terminal of the operational amplifier (301) receives the voltage V output by the second circuit (200) through the first input resistor (302). REF_BUF The negative input terminal of the operational amplifier (301) is connected to the output terminal of the operational amplifier (301) through a first feedback resistor (303), and the current input terminal I B Receive the current I output by the fifth circuit (500) Z1,2 , the output voltage V of the output terminal of the operational amplifier (301) PTAT_E .

4. The on-chip temperature sensor based on the enhanced positive temperature coefficient voltage generation structure according to claim 1, characterized in that: The fourth circuit (400) comprises a second amplifier (401), the positive input terminal of the second amplifier (401) receiving a voltage V output by the third circuit (300) PTAT_E The negative input terminal of the second amplifier (401) receives the voltage V output by the second circuit (200) through the second input resistor (402). REF_BUF The negative input terminal of the second amplifier (401) is connected to the output terminal of the second amplifier (401) through a second feedback resistor (403), and the current input terminal I B Receive the current I output by the fifth circuit (500) Z1,3 , the output voltage V of the output terminal of the second amplifier (401) PTAT_E_BUF .

5. The on-chip temperature sensor based on the enhanced positive temperature coefficient voltage generation structure according to claim 1, characterized in that: The fifth circuit (500) is a multi-output current mirror, the input end of which is connected to the zero temperature coefficient reference voltage output end V of the first circuit (100). REF , the output end of the multi-output current mirror is 4 zero temperature coefficient bias current output ports, the output current I Z1,1 —I Z1,4 .

6. The on-chip temperature sensor based on the enhanced positive temperature coefficient voltage generation structure according to claim 1, characterized in that: The sixth circuit (600) comprises an analog-to-digital converter, which receives a voltage V output by the fourth circuit (400). PTAT_E_BUF , the voltage V output by the second circuit (200) REF_BUF , the current I output by the fifth circuit (500) Z1,4 , output on-chip temperature code.

7. The on-chip temperature sensor based on the enhanced positive temperature coefficient voltage generation structure according to claim 1, characterized in that: The working process of the on-chip temperature sensor includes a stable working stage and a temperature detection output stage, and its steps include: 1) When the chip is powered on, the first circuit (100) operates to generate a reference voltage V REF With positive temperature coefficient voltage V PTAT ; 2) Determine whether the circuit generates a reference voltage V at this time REF With positive temperature coefficient voltage V PTAT ; 3) If the circuit cannot generate the reference voltage V REF With positive temperature coefficient voltage V PTAT , then jump back to step 1) until the first circuit part (100) can generate the reference voltage V REF With positive temperature coefficient voltage V PTAT ; 4) If the circuit can generate a reference voltage V REF With positive temperature coefficient voltage V PTAT , a stable reference voltage and positive temperature coefficient voltage are generated, and the chip enters a stable working state; 5) Entering the temperature detection output phase 1: the fifth part (500) generates a bias current that is not related to the absolute temperature and provides it to the second part circuit (200), the third part circuit (300), the fourth part circuit (400), and the sixth part circuit (600) modules; 6) Entering temperature detection output stage 2: the first circuit (100) and the second circuit (200) generate a reference voltage V that is not related to absolute temperature. REF_BUF The first circuit (100), the third circuit (300), and the fourth circuit (400) generate a voltage V that is positively correlated with the absolute temperature. PTAT_E_BUF as an input control voltage to provide to a sixth circuit (600) analog-to-digital converter circuit; 7) The sixth circuit (600) analog-to-digital converter circuit generates and outputs an on-chip temperature code to complete on-chip temperature detection.

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