Radio frequency front-end module

Abstract

The invention relates to the technical field of integrated circuits, in particular to a radio frequency front-end module, which comprises a substrate comprising a plurality of metal layers sequentially arranged along a first direction; the inductor comprises at least one inductor winding, and the inductor winding is arranged on the metal layer; the first area is arranged on the metal layer, and the first area is an area where the ground is laid; wherein an interval exists between a first projection of the inductor winding on a first plane and a second projection of the first area on the first plane, the minimum distance between the first projection and the second projection is larger than or equal to 0.5 times of the width of the inductor, and the first plane is perpendicular to the first direction. According to the invention, the overall loss is reduced, and the output efficiency of the radio frequency front-end module is improved.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and in particular to a radio frequency front-end module. Background Art

[0002] RF front-end modules are widely used in wireless communications applications such as mobile phones, the Internet of Things (IoT), and connected cars. With the widespread adoption of 5G technology and the development of the Internet of Things (IoT), market demand for RF front-end modules continues to grow. RF front-end module losses can have multiple impacts on the system, including reduced signal quality, decreased system performance, increased energy consumption, reduced coverage, increased system complexity, and system instability. Therefore, there is a need for an RF front-end module that can reduce losses and improve system performance. Summary of the Invention

[0003] In view of the above problems, the embodiments of the present application provide a radio frequency front-end module to solve the above technical problems.

[0004] The present invention provides a radio frequency front-end module, including:

[0005] A substrate comprising a plurality of metal layers sequentially arranged along a first direction;

[0006] an inductor, comprising at least one inductor winding, wherein the inductor winding is disposed on the metal layer;

[0007] A first area is provided on the metal layer, wherein the first area is an area where the ground is laid;

[0008] The inductor winding has a gap between a first projection of the first plane and a second projection of the first region on the first plane, and a minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

[0009] Optionally, the width of the inductor ranges from 50 μm to 150 μm.

[0010] Optionally, a minimum distance between the first projection and the second projection is greater than or equal to 0.7 times the width of the inductor.

[0011] Optionally, the metal layer includes a first metal layer, the inductor winding and the first region are arranged on the first metal layer, and the distance between the inductor winding and the first region on the first metal layer is 1 to 2 times the width of the inductor.

[0012] Optionally, the metal layer includes a second metal layer and a third metal layer, the second metal layer and the third metal layer are arranged adjacent to each other, the second metal layer is provided with the inductor winding, the third metal layer is provided with the first area, and the distance between the projection of the inductor winding of the second metal layer on the first plane and the projection of the first area of ​​the third metal layer on the first plane is 0.8 times to 1.6 times the width of the inductor.

[0013] Optionally, the metal layer includes a fourth metal layer and a sixth metal layer, the fourth metal layer and the sixth metal layer are not adjacent, the fourth metal layer is provided with the inductor winding, the sixth metal layer is provided with the first area, and the distance between the projection of the inductor winding of the fourth metal layer on the first plane and the projection of the first area of ​​the sixth metal layer on the first plane is 0.7 times to 1.4 times the width of the inductor.

[0014] Optionally, the RF front-end module also includes an RF power amplifier chip and a second area arranged on the substrate, wherein the second area is an area with a ground, and the components configured to be grounded in the RF power amplifier chip are grounded through the second area, and there is a gap between the third projection of the second area on the first plane and the second projection of the first area on the first plane.

[0015] Optionally, the minimum distance between the third projection of the second area on the first plane and the second projection of the first area on the first plane is greater than or equal to 1 / 2 of the wavelength corresponding to the operating frequency band of the RF power amplifier chip.

[0016] Optionally, a fourth projection of the RF power amplifier chip on the first plane at least partially overlaps with a third projection of the second region on the first plane.

[0017] Optionally, the RF front-end module further includes an output load circuit arranged on the substrate, the output load circuit is connected to the output end of the RF power amplifier chip, and the components configured to be grounded in the output load circuit are grounded through the second area.

[0018] Optionally, the output load circuit includes at least one grounded matching element, and the matching element is configured to be grounded through the second region.

[0019] Optionally, the matching element includes a capacitor, an inductor or a resistor.

[0020] Optionally, the output load circuit includes an output transformer, and a ground terminal of the output transformer is configured to be grounded through the second region.

[0021] Optionally, the output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip, the second end of the first capacitor is connected to the signal output end through the first inductor, the first end of the second inductor is connected to the second end of the first capacitor, the second end of the second inductor is configured to be grounded through the second region, the first end of the second capacitor is connected to the second end of the first inductor, and the second end of the second inductor is configured to be grounded through the second region.

[0022] The RF front-end module provided in an embodiment of the present application includes a substrate, including at least one metal layer arranged in sequence along a first direction; an inductor, including at least one inductor winding, which is arranged on the metal layer; a first area, which is arranged on the metal layer, and the first area is an area where the ground is laid; wherein, there is a gap between the inductor winding and the first projection of the first plane and the second projection of the first area on the first plane, and the minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction; through the above method, not only can the width of the inductor be avoided from being too narrow to reduce the quality factor (Q value) of the circuit, but also the RF energy coupled to the first area due to the distance between the inductor and the first area being too close can be avoided, thereby reducing the overall loss and improving the output efficiency of the RF front-end module.

[0023] The present invention provides a radio frequency front-end module, including:

[0024] A carrier comprising a plurality of metal layers sequentially arranged along a first direction;

[0025] an inductor, comprising at least one inductor winding, wherein the inductor winding is disposed on the metal layer;

[0026] A first area is provided on the metal layer, wherein the first area is an area where the ground is laid;

[0027] The inductor winding has a gap between a first projection of the first plane and a second projection of the first region on the first plane, and a minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

[0028] Optionally, a minimum distance between the first projection and the second projection is greater than or equal to 0.7 times the width of the inductor.

[0029] Optionally, the carrier is a chip or a substrate.

[0030] The RF front-end module provided in an embodiment of the present application includes a carrier, including multiple metal layers arranged in sequence along a first direction; an inductor, including at least one inductor winding, which is arranged on the metal layer; a first area, which is arranged on the metal layer, and the first area is an area where the ground is laid; wherein, there is a gap between the inductor winding and the first projection of the first plane and the second projection of the first area on the first plane, and the minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction; through the above method, not only can the width of the inductor be avoided from being too narrow to reduce the quality factor (Q value) of the circuit, but also the RF energy coupled to the first area due to the distance between the inductor and the first area being too close can be avoided, thereby reducing the overall loss and improving the output efficiency of the RF front-end module.

[0031] The present invention provides a radio frequency front-end module, including:

[0032] A substrate, and a radio frequency power amplifier chip, a first region, and a second region provided on the substrate; wherein the first region and the second region are both grounded regions, components configured to be grounded in the radio frequency power amplifier chip are grounded through the second region, and components configured to be grounded in other functional modules of the radio frequency front-end module are grounded through the first region;

[0033] There is a gap between the projections of the first area and the second area on the same plane.

[0034] Optionally, the minimum distance between the projections of the first area and the second area on the same plane is greater than or equal to 1 / 2 of the wavelength corresponding to the operating frequency band of the radio frequency power amplifier chip.

[0035] Optionally, projections of the RF power amplifier chip and the second region on the same plane at least partially overlap.

[0036] Optionally, the RF front-end module further includes an output load circuit arranged on the substrate, the output load circuit is connected to the output end of the RF power amplifier chip, and the components configured to be grounded in the output load circuit are grounded through the second area.

[0037] Optionally, the output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip, the second end of the first capacitor is connected to the signal output end through the first inductor, the first end of the second inductor is connected to the second end of the first capacitor, the second end of the second inductor is configured to be grounded through the second region, the first end of the second capacitor is connected to the second end of the first inductor, and the second end of the second capacitor is configured to be grounded through the second region.

[0038] Optionally, the RF power amplifier chip includes a matching circuit and a power amplifier transistor, the ground terminal of the power amplifier transistor is configured to be grounded through the second region, and the components configured to be grounded in the matching circuit are grounded through the second region.

[0039] The RF front-end module provided in an embodiment of the present application includes a substrate, an RF power amplifier chip arranged on the substrate, a first area, and a second area; wherein the first area and the second area are both areas with ground, and the components configured to be grounded in the RF power amplifier chip are grounded through the second area; wherein there is a gap between the projections of the first area and the second area on the same plane; through the above method, the first area and the second area can be isolated to prevent crosstalk between the first area and the second area (the RF grounding area of ​​the RF power amplifier chip), thereby improving the stability of the RF power amplifier chip, reducing the overall loss, and improving the output efficiency, stability and isolation between the RF signal and the analog digital signal of the RF front-end module.

[0040] These and other aspects of the present application will become more readily apparent from the description of the following embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A schematic structural diagram of the RF front-end module provided in Example 1 of the present application is shown.

[0042] Figure 2 Shown Figure 1 The partial structural cross-section of the RF front-end module is shown.

[0043] Figure 3 Shown Figure 1 The partial structural cross-section of the RF front-end module is shown.

[0044] Figure 4 Shown Figure 1 The partial structural cross-section of the RF front-end module is shown.

[0045] Figure 5 A schematic structural diagram of the RF front-end module provided in Example 1 of the present application is shown.

[0046] Figure 6 A schematic structural diagram of the RF front-end module provided in Example 1 of the present application is shown.

[0047] Figure 7 A schematic structural diagram of the RF front-end module provided in Example 1 of the present application is shown.

[0048] Figure 8 A circuit diagram of the output load circuit in the RF front-end module provided in Example 1 of the present application is shown.

[0049] Figure 9 A schematic structural diagram of the RF front-end module provided in Example 1 of the present application is shown.

[0050] Figure 10 Shown Figure 9 The partial structural cross-section of the RF front-end module is shown.

[0051] Figure 11 Shown Figure 9 The partial structural cross-section of the RF front-end module is shown.

[0052] Figure 12 A schematic structural diagram of the RF front-end module provided in Comparative Example 1 is shown.

[0053] Figure 13 A structural diagram of the RF front-end module provided in Comparative Example 2 is shown.

[0054] Figure 14 A comparison chart of the inductance values ​​of the first inductor in Example 1 of the present application and the first inductor in the comparative example is shown;

[0055] Figure 15 A comparison chart of the quality factors of the first inductor in Example 1 of the present application and the first inductor in the comparative example is shown;

[0056] Figure 16 A comparison chart of the inductance values ​​of the second inductor in Example 1 of the present application and the second inductor in the comparative example is shown;

[0057] Figure 17 A comparison chart of the quality factors of the second inductor in the first embodiment of the present application and the second inductor in the comparative example is shown;

[0058] Figure 18 A schematic structural diagram of the RF front-end module provided in Example 1 of the present application is shown.

[0059] Figure 19 A schematic structural diagram of the RF front-end module provided in Example 2 of the present application is shown.

[0060] Figure 20A schematic structural diagram of the RF front-end module provided in Example 3 of the present application is shown.

[0061] Figure 21 A schematic structural diagram of the RF front-end module provided in Example 3 of the present application is shown.

[0062] Figure 22 A circuit diagram of the output load circuit in the RF front-end module provided in Example 3 of the present application is shown.

[0063] Figure 23 A schematic structural diagram of the RF front-end module provided in Example 3 of the present application is shown.

[0064] Figure 24 Shown Figure 23 The partial structural cross-section of the RF front-end module is shown.

[0065] Figure 25 Shown Figure 23 The partial structural cross-section of the RF front-end module is shown.

[0066] Figure 26 A schematic structural diagram of the RF front-end module provided in Example 3 of the present application is shown. DETAILED DESCRIPTION

[0067] The embodiments of the present application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application and are not to be construed as limiting the present application.

[0068] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0069] In the embodiments of the present application, it should be noted that, in this document, relational terms such as first and second, etc., are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0070] Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not preclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0071] In the description of the embodiments of this application, words such as "example" or "for example" are used to indicate an example, illustration, or description. Any embodiment or design described as "for example" or "for example" in the embodiments of this application is not to be construed as being preferred or having more advantages than another embodiment or design. The use of words such as "example" or "for example" is intended to clearly present relative concepts.

[0072] In addition, in the embodiments of the present application, "plurality" refers to two or more. In view of this, in the embodiments of the present application, "plurality" can also be understood as "at least two". "At least one" can be understood as one or more, for example, one, two, or more. For example, "including at least one" means including one, two, or more, and does not limit which ones are included. For example, "including at least one of A, B, and C" means including A, B, C, A and B, A and C, B and C, or A, B, and C.

[0073] It should be noted that in the embodiments of the present application, "and / or" describes the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects are in an "or" relationship.

[0074] It should be noted that in the embodiments of the present application, "connection" can be understood as electrical connection, and the connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be either a direct connection between A and B or an indirect connection between A and B through one or more other electrical components.

[0075] (Example 1)

[0076] Please refer to Figure 1An embodiment of the present application provides a radio frequency front-end module 100, comprising a substrate 110, an inductor 120, and a first region 130. The substrate 110 comprises a plurality of metal layers 111, and all the metal layers 111 are arranged in sequence along a first direction. The inductor 120 comprises at least one inductor winding 121, and the inductor winding 121 is arranged on the metal layer 111. The first region 130 is arranged on the metal layer 111, and the first region 130 is an area where a ground is laid. The projection of the inductor winding 121 on the first plane 200 is a first projection, and the projection of the first region 130 on the first plane 200 is a second projection. There is a gap between the first projection and the second projection, and the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 120, wherein the first plane 200 is perpendicular to the first direction.

[0077] In this embodiment, there is a gap between the first projection of the inductor winding 121 on the first plane 200 and the second projection of the first region 130 on the first plane 200, and the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 120. It can also avoid the RF energy being coupled to the first region 130 due to the close distance between the inductor 120 and the first region 130, thereby reducing the overall loss and improving the output efficiency of the RF front-end module 100.

[0078] It is understood that the minimum distance L between the first projection and the second projection refers to the distance between the point on the first projection closest to the second projection (point A) and the point on the second projection closest to the first projection (point B). Figure 1 shown.

[0079] As an example, the minimum distance L between the first projection and the second projection may be 0.5 times, 0.6 times, 0.7 times, 0.8 times, 1 times, 1.4 times, 1.6 times, or 2 times, etc., of the width W of the inductor 120 .

[0080] In some embodiments, see Figure 1 The width W of the inductor 120 ranges from 50 μm to 150 μm. This not only avoids an increase in the parasitic resistance of the inductor 120 and an increase in the overall insertion loss due to the inductor 120 being too narrow, but also avoids an excessively wide width of the inductor 120 and a close distance between the inductor 120 and the first region 130, thereby avoiding an increase in the parasitic capacitance of the inductor 120 and an increase in the overall insertion loss. Therefore, this embodiment can effectively reduce the overall loss (for example, the output matching circuit) and improve the output efficiency of the RF front-end module 100.

[0081] As an example, the width W of the inductor 120 may be 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, or 150 μm, etc.

[0082] In some embodiments, the minimum distance L between the first projection and the second projection is greater than or equal to 0.7 times the width W of the inductor 120 , which can further prevent RF energy from being coupled to the first region 130 due to the inductor 120 being too close to the first region 130 .

[0083] In some embodiments, see Figure 2 The metal layer 111 includes a first metal layer 111a, the inductor winding 121 is disposed on the first metal layer 111a, and the first region 130 is disposed on the first metal layer 111a. That is, in this embodiment, the inductor winding 121 and the first region 130 are located on the same metal layer 111.

[0084] As an embodiment, the distance L1 between the inductor winding 121 located on the first metal layer 111a and the first region 130 is greater than or equal to the width W of the inductor 120, thereby reducing the overall loss and improving the output efficiency of the RF front-end module 100.

[0085] As an example, please refer to Figure 2 , the distance L1 between the inductor winding 121 located on the first metal layer 111a and the first region 130 is 1 to 2 times the width W1 of the inductor winding 121 located on the first metal layer 111a. It should be noted that in addition to the inductor winding 121 located on the first metal layer 111a, the inductor 120 may also include inductor windings 121 located on other metal layers, and the widths of the inductor windings 121 on all metal layers 111 may be equal or unequal. That is, as an example, when the widths of the inductor windings 121 on all metal layers 111 are equal, the width W1 of the inductor winding 121 located on the first metal layer 111a is the width W of the inductor 120. As another example, when the widths of the inductor windings 121 on all metal layers 111 are unequal, the width W of the inductor 120 is determined by the widest metal width Wmax among the different metal layers.

[0086] In this example, the distance L1 between the inductor winding 121 on the first metal layer 111a and the first region 130 is 1 to 2 times the width W1 of the inductor winding 121 on the first metal layer 111a. That is, the minimum distance between the inductor winding 121 on the first metal layer 111a and the first region 130 is no less than the width W1 of the inductor winding 121 on the first metal layer 111a, and the maximum distance between the inductor winding 121 on the first metal layer 111a and the first region 130 is no more than twice the width W1 of the inductor winding 121 on the first metal layer 111a. This effectively prevents RF energy from being coupled to the first region 130 due to the inductor 120 being too close to the first region 130, thereby reducing overall losses and improving the output efficiency of the RF front-end module 100. Furthermore, the rational spatial layout facilitates the miniaturization of the RF front-end module 100.

[0087] In some embodiments, see Figure 3 Metal layer 111 includes a second metal layer 111b and a third metal layer 111c. Second metal layer 111b and third metal layer 111c are disposed adjacent to each other. Second metal layer 111b is provided with inductor winding 121, and third metal layer 111c is provided with first region 130. That is, in this embodiment, inductor winding 121 and first region 130 are located on adjacent metal layers.

[0088] As an embodiment, the distance L2 between the projection of the inductor winding 121 of the second metal layer 111b on the first plane 200 and the projection of the first region 130 of the third metal layer 111c on the first plane 200 is greater than or equal to 0.8 times the width W of the inductor 120. Compared with the inductor winding 121 and the first region 130 located on the same metal layer 111, the coupling coefficient between the inductor winding 121 and the first region 130 located on adjacent metal layers 111 is smaller. Therefore, this embodiment can not only effectively reduce overall losses and improve the output efficiency of the RF front-end module 100, but also has a reasonable spatial layout, which is more conducive to the miniaturization of the RF front-end module 100.

[0089] As an example, please refer to Figure 3, the distance L2 between the projection of the inductor winding 121 located in the second metal layer 111b on the first plane 200 and the projection of the first region 130 located in the third metal layer 111c on the first plane 200 is 0.8 times to 1.6 times the width W2 of the inductor winding 121 located in the second metal layer 111b, that is, the minimum distance between the projection of the inductor winding 121 of the second metal layer 111b on the first plane 200 and the projection of the first region 130 of the third metal layer 111c on the first plane 200 is not less than 0.8 times the width W2 of the inductor winding 121 of the second metal layer 111b, and the maximum distance between the projection of the inductor winding 121 of the second metal layer 111b on the first plane 200 and the projection of the first region 130 of the third metal layer 111c on the first plane 200 does not exceed 1.6 times the width W2 of the inductor winding 121 of the second metal layer 111b. It should be noted that, in addition to the inductor winding 121 located on the second metal layer 111b, the inductor 120 may also include the inductor winding 121 located on other metal layers, and the widths of the inductor windings 121 on all metal layers 111 may be equal, that is, the width W2 of the inductor winding 121 located on the second metal layer 111b is the width W of the inductor 120.

[0090] In this example, the distance L2 between the projection of the inductor winding 121 of the second metal layer 111b on the first plane 200 and the projection of the first area 130 of the third metal layer 111c on the first plane 200 is 0.8 to 1.6 times the width W2 of the inductor winding 121 of the second metal layer 111b, which can effectively avoid the RF energy from being coupled to the first area 130 due to the inductor 120 being too close to the first area 130, thereby reducing the overall loss, improving the output efficiency of the RF front-end module 100, further optimizing the spatial layout, and being more conducive to the miniaturization of the structure of the RF front-end module 100.

[0091] In some embodiments, see Figure 4 The metal layer 111 includes a fourth metal layer 111d and a sixth metal layer 111e. The fourth metal layer 111d and the sixth metal layer 111e are not adjacent to each other. The fourth metal layer 111d is provided with an inductor winding 121, and the sixth metal layer 111e is provided with a first region 130. That is to say, in this embodiment, the inductor winding 121 and the first region 130 are located on non-adjacent metal layers, and at least one metal layer is provided between the fourth metal layer 111d and the sixth metal layer 111e.

[0092] As an embodiment, the distance L3 between the projection of the inductor winding 121 located on the fourth metal layer 111d on the first plane 200 and the projection of the first region 130 located on the sixth metal layer 111e on the first plane 200 is greater than or equal to 0.7 times the width of the inductor 120. Compared with the inductor winding 121 and the first region 130 located on the adjacent metal layer 111, the coupling coefficient between the inductor winding 121 and the first region 130 located on the non-adjacent metal layer 111 is smaller. Therefore, this embodiment can not only effectively reduce the overall loss and improve the output efficiency of the RF front-end module 100, but also has a reasonable spatial layout, which is more conducive to the miniaturization of the RF front-end module 100.

[0093] As an example, please refer to Figure 4 The distance L3 between the projection of the inductor winding 121 of the fourth metal layer 111d on the first plane 200 and the projection of the first region 130 of the sixth metal layer 111e on the first plane 200 is 0.7 to 1.4 times the width W3 of the inductor winding 121 of the fourth metal layer 111d. In other words, the minimum distance between the projection of the inductor winding 121 of the fourth metal layer 111d on the first plane 200 and the projection of the first region 130 of the sixth metal layer 111e on the first plane 200 is not less than 0.7 times the width W3 of the inductor winding 121 of the fourth metal layer 111d, and the maximum distance between the projection of the inductor winding 121 of the fourth metal layer 111d on the first plane 200 and the projection of the first region 130 of the sixth metal layer 111e on the first plane 200 is not more than 1.4 times the width W3 of the inductor winding 121 of the fourth metal layer 111d. It should be noted that in addition to the inductor winding 121 located on the fourth metal layer 111 d, the inductor 120 may also include inductor windings 121 located on other metal layers, and the widths of the inductor windings 121 on all metal layers 111 may be equal. In other words, the width W3 of the inductor winding 121 located on the fourth metal layer 111 d is equal to the width W of the inductor 120.

[0094] In this example, the distance L3 between the projection of the inductor winding 121 of the fourth metal layer 111d on the first plane 200 and the projection of the first area 130 of the sixth metal layer 111e on the first plane 200 is 0.7 to 1.4 times the width W3 of the inductor winding 121 of the fourth metal layer 111d, which can effectively avoid the RF energy being coupled to the first area 130 due to the inductor 120 being too close to the first area 130, thereby reducing the overall loss, improving the output efficiency of the RF front-end module 100, further optimizing the spatial layout, and being more conducive to the miniaturization of the RF front-end module 100.

[0095] In some embodiments, see Figure 5The RF front-end module 100 also includes an RF power amplifier chip 140 and a second region 150. The RF power amplifier chip 140 is disposed on the substrate 110, and the second region 150 is disposed on the substrate 110. The second region 150 is a grounded area, and the components configured to be grounded in the RF power amplifier chip 140 are grounded through the second region 150. There is a gap between the third projection of the second region 150 on the first plane 200 and the second projection of the first region 130 on the first plane 200. The RF power amplifier chip 140 is a chip integrated with a power amplifier circuit. The RF power amplifier chip can adopt any design process type such as HBT (heterojunction bipolar transistor), HEMT (modulation doped field effect transistor), pHEMT (pseudo modulation doped heterojunction field effect transistor) and MESFET (metal-semiconductor field effect transistor). The power amplifier circuit can be any type of amplifier circuit such as single-ended, differential, Doherty, etc.

[0096] In this embodiment, the components configured as grounded in the RF power amplifier chip 140 are grounded through the second area 150. There is a gap between the third projection of the second area 150 on the first plane 200 and the second projection of the first area 130 on the first plane 200, which can isolate the ground area of ​​the RF power amplifier chip 140 from other surrounding areas, prevent the RF energy of each RF power amplifier chip 140 from crosstalking with each other, and prevent the RF power amplifier chip 140 from crosstalking with other chip modules, thereby improving the stability of the RF power amplifier chip 140 and improving the isolation between the RF signal and other types of signals (for example, analog signals).

[0097] In some embodiments, see Figure 5 , the distance L4 between the third projection of the second area 150 on the first plane 200 and the second projection of the first area 130 on the first plane 200 is greater than or equal to 0.5 times the wavelength corresponding to the operating frequency band of the RF power amplifier chip 140, thereby further ensuring the stability of the RF power amplifier chip 140 and further ensuring the isolation between the RF signal and other types of signals (e.g., analog signals). It should be noted that the distance L4 between the third projection of the second area 150 on the first plane 200 and the second projection of the first area 130 on the first plane 200 is related to the operating frequency band of the RF power amplifier chip 140. The larger the operating frequency band of the RF power amplifier chip 140, the smaller the distance L4 between the third projection of the second area 150 on the first plane 200 and the second projection of the first area 130 on the first plane 200. Conversely, the smaller the operating frequency band of the RF power amplifier chip 140, the larger the distance L4 between the third projection of the second area 150 on the first plane 200 and the second projection of the first area 130 on the first plane 200.

[0098] In some embodiments, the components configured as ground in the RF power amplifier chip 140 are connected to the second region 150. Figure 5 The fourth projection of the RF power amplifier chip 140 on the first plane 200 and the third projection of the second area 150 on the first plane 200 at least partially overlap, which can avoid a messy layout caused by too long connecting lines and make the layout of the RF front-end module 100 more neat.

[0099] In some embodiments, see Figure 6 The RF front-end module 100 also includes an output load circuit 160, which is arranged on the substrate 110. The output load circuit 160 is connected to the output end of the RF power amplifier chip 140, and the components configured to be grounded in the output load circuit 160 are grounded through the second area 150.

[0100] In this embodiment, although the output load circuit 160 of the RF power amplifier chip 140 is integrated on the substrate 110, the components configured to be grounded in the output load circuit 160 are grounded through the second area 150, thereby ensuring the stability of the RF power amplifier chip 140 and ensuring the isolation between the RF signal and other types of signals (for example, analog signals).

[0101] In some embodiments, see Figure 6 The output load circuit 160 includes at least one grounded matching element 161 , and the matching element 161 is configured to be grounded through the second region 150 .

[0102] In some embodiments, the matching element 161 includes at least one of a capacitor, an inductor 120 , and a resistor.

[0103] As an example, please refer to Figure 7 The matching element 161 includes an inductor 120 , one end of the inductor 120 is connected to the output end of the RF power amplifier chip 140 , and the other end of the inductor 120 is grounded through the second region 150 .

[0104] As an implementation, please refer to Figure 8The output load circuit 160 includes a first capacitor 170a, a first inductor 120a, a second capacitor 170b and a second inductor 120b. The first end of the first capacitor 170a is connected to the output end 141 of the RF power amplifier chip 140, and the second end of the first capacitor 170a is connected to the signal output end 180 through the first inductor 120a. The first end of the second inductor 120b is connected to the second end of the first capacitor 170a, and the second end of the second inductor 120b is configured to be grounded through the second region 150. The first end of the second capacitor 170b is connected to the second end of the first inductor 120a, and the second end of the second capacitor 170b is configured to be grounded through the second region 150, thereby ensuring the stability of the RF power amplifier chip 140 and ensuring the isolation between the RF signal and other types of signals (for example, analog signals).

[0105] Please refer to Figure 9 The first inductor 120a includes at least one first inductor winding 121a, and a minimum distance L5 between a projection of the first inductor winding 121a on the first plane 200 and a projection of the first region 130 on the first plane 200 is greater than or equal to 0.5 times the width W4 of the first inductor 120a, and the width of the first inductor winding 121a is equal to the width W4 of the first inductor 120a; and / or the second inductor 120b includes at least one second inductor winding 121b, and a minimum distance L6 between a projection of the second inductor winding 121b on the first plane 200 and a projection of the first region 130 on the first plane 200 is greater than or equal to 0.5 times the width W5 of the second inductor 120b, and the width of the second inductor winding 121b is equal to the width W5 of the second inductor 120b.

[0106] This embodiment can avoid the RF energy from being coupled to the first region 130 due to the first inductor 120a and / or the second inductor 120b being too close to the first region 130, thereby reducing the overall loss and improving the output efficiency and stability of the RF front-end module 100.

[0107] As an implementation, please refer to Figure 10 The distance L between the projection of the first inductor winding 121a on the first plane 200 and the projection of the first region 130 on the same metal layer 111 on the first plane 200 is 51 The distance L between the projection of the first inductor winding 121a on the first plane 200 and the projection of the first region 130 on the adjacent metal layer 111 on the first plane 200 is 1 to 2 times the width W4 of the first inductor 120a. 52 The distance L between the projection of the first inductor winding 121a on the first plane 200 and the projection of the first region 130 on the non-adjacent metal layer 111 on the first plane 200 is 0.8 to 1.6 times the width W4 of the first inductor 120a.53 It is 0.7 to 1.4 times the width W4 of the first inductor 120a, thereby reducing the overall loss, improving the output efficiency of the RF front-end module 100, optimizing the spatial layout, and being more conducive to the miniaturization of the RF front-end module 100.

[0108] As an implementation, please refer to Figure 11 The distance L between the projection of the second inductor winding 121b on the first plane 200 and the projection of the first region 130 on the same metal layer 111 on the first plane 200 is 61 The distance L between the projection of the second inductor winding 121b on the first plane 200 and the projection of the first region 130 on the adjacent metal layer 111 on the first plane 200 is 1 to 2 times the width W5 of the second inductor 120b. 62 The distance L between the projection of the second inductor winding 121b on the first plane 200 and the projection of the first region 130 on the non-adjacent metal layer 111 on the first plane 200 is 0.8 to 1.6 times the width W5 of the second inductor 120b. 63 It is 0.7 to 1.4 times the width W5 of the second inductor 120b, thereby reducing the overall loss, improving the output efficiency of the RF front-end module 100, optimizing the spatial layout, and being more conducive to the miniaturization of the RF front-end module 100 structure.

[0109] As an example, please refer to Figure 9 In the illustrated embodiment, the width W4 of the first inductor 120a is 50 μm to 150 μm, and the minimum distance L5 between the projection of the first inductor winding 121a on the first plane 200 and the projection of the first region 130 on the first plane 200 is 1.5 times the width W4 of the first inductor 120a; the width W5 of the second inductor 120b is 50 μm to 150 μm, and the minimum distance L6 between the projection of the second inductor winding 121b on the first plane 200 and the projection of the first region 130 on the first plane 200 is 1.2 times the width W5 of the second inductor 120b.

[0110] Please refer to Figure 12 In the comparative example 1 shown, the width W6 of the first inductor 120a' is 1.5 times the width W4 of the first inductor 120a, and the minimum distance L7 between the projection of the first inductor winding 121a' on the first plane 200 and the projection of the first region 130 on the first plane 200 is 0.3 times the width W6 of the first inductor 120a'; the width W7 of the second inductor 120b' is 1.5 times the width W5 of the second inductor 120b, and the minimum distance L8 between the projection of the second inductor winding 121b' on the first plane 200 and the projection of the first region 130 on the first plane 200 is 0.3 times the width W7 of the second inductor 120b'.

[0111] Please refer to Figure 13 In the comparative example 2 shown in FIG. 1 , the width W8 of the first inductor 120a″ is 0.5 times the width W4 of the first inductor 120a, and the minimum distance L9 between the projection of the first inductor winding 121a″ on the first plane 200 and the projection of the first region 130 on the first plane 200 is 3 times the width W8 of the first inductor 120a″; the width W9 of the second inductor 120b″ is 0.5 times the width W5 of the second inductor 120b, and the minimum distance L9 between the projection of the second inductor winding 121b″ on the first plane 200 and the projection of the first region 130 on the first plane 200 is 3 times the width W8 of the first inductor 120a″. 10 It is three times the width W9 of the second inductor 120b″.

[0112] Please refer to Figure 14 The inductance comparison diagram shown in FIG. 1 shows the inductance value curve of the first inductor 120a, the curve S12 shows the inductance value curve of the first inductor 120a', and the curve S13 shows the inductance value curve of the first inductor 120a". Figure 14 It can be seen that the resonant frequency of the first inductor 120a is 7.4 GHz, and the resonant frequencies of the first inductor 120a′ and the first inductor 120a″ are 6.6 GHz. Therefore, among the three first inductors, the parasitic capacitance of the first inductor 120a is the smallest.

[0113] Please refer to Figure 15 The Q value (quality factor) comparison diagram shown in FIG. 1 is a Q value curve of the first inductor 120a, a curve S22 is a Q value curve of the first inductor 120a', and a curve S23 is a Q value curve of the first inductor 120a". Figure 15 It can be seen that the Q value of the first inductor 120 a is higher than the Q values ​​of the first inductor 120 a ′ and the first inductor 120 a ″. Therefore, the first inductor 120 a can effectively reduce the overall loss.

[0114] Please refer to Figure 16 The inductance comparison diagram shown in FIG. 1 shows the inductance value curve of the second inductor 120 b, the curve S32 shows the inductance value curve of the second inductor 120 b ′, and the curve S33 shows the inductance value curve of the second inductor 120 b ″. Please refer to FIG. Figure 17 As shown in the Q value comparison diagram, curve S41 is the Q value curve of the second inductor 120b, curve S42 is the Q value curve of the second inductor 120b', and curve S43 is the Q value curve of the second inductor 120b". Figure 16 and Figure 17 It can be seen that the inductance of the second inductor 120 b is the smallest, the Q value of the second inductor 120 b is the highest, and the parasitic resistance of the second inductor 120 b is the smallest, so the second inductor 120 b can effectively reduce the overall loss.

[0115] In some embodiments, see Figure 18 The output load circuit 160 includes an output transformer 162, and the ground terminal of the output transformer 162 is configured to be grounded through the second region 150, thereby ensuring the stability of the RF power amplifier chip 140 and ensuring the isolation between the RF signal and other types of signals (for example, analog signals).

[0116] (Example 2)

[0117] Please refer to Figure 19 An embodiment of the present application provides a radio frequency front-end module 300, comprising a carrier 310, an inductor 320, and a first region 330. The carrier 310 comprises a plurality of metal layers 311, which are sequentially arranged along a first direction. The inductor 320 comprises at least one inductor winding 321, which is arranged on the metal layer 311. The first region 330 is arranged on the metal layer 311, and the first region 330 is an area where a ground is laid. There is a gap between the first projection of the inductor winding 321 on the first plane 400 and the second projection of the first region 330 on the first plane 400, and the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 320, wherein the first plane 400 is perpendicular to the first direction.

[0118] In this embodiment, there is a gap between the first projection of the inductor winding 321 on the first plane 400 and the second projection of the first region 330 on the first plane 400, and the minimum distance L between the first projection and the second projection is greater than or equal to 0.5 times the width W of the inductor 320. This not only avoids the width of the inductor 320 being too narrow and reducing the quality factor (Q value) of the circuit, but also avoids the RF energy being coupled to the first region 330 due to the distance between the inductor 320 and the first region 330 being too close, thereby reducing the overall loss and improving the output efficiency of the RF front-end module 300.

[0119] In some embodiments, the minimum distance L between the first projection and the second projection is greater than or equal to 0.7 times the width W of the inductor 320 , which can further prevent RF energy from being coupled to the first region 330 due to the inductor 320 being too close to the first region 330 .

[0120] In some embodiments, the carrier 310 may be a chip. In other embodiments, the carrier 310 may be a substrate.

[0121] It should be noted that the second embodiment is substantially the same as the first embodiment, so the same parts will not be described again here.

[0122] (Example 3)

[0123] Please refer to Figure 20 An embodiment of the present application provides a radio frequency front-end module 500, comprising a substrate 510, a radio frequency power amplifier chip 540, a first region 530, and a second region 550. The radio frequency power amplifier chip 540, the first region 530, and the second region 550 are disposed on the substrate 510, wherein the first region 530 and the second region 550 are both grounded regions. Components configured to be grounded in the radio frequency power amplifier chip 540 are grounded through the second region 550, and components configured to be grounded in other functional modules of the radio frequency front-end module 500 are grounded through the first region 530. There is a gap between the projections of the first region 530 and the second region 550 on the same plane.

[0124] In this embodiment, there is a gap between the projections of the first region 530 and the second region 550 on the same plane, thereby isolating the first region 530 from the second region 550. The components configured to be grounded in the RF power amplifier chip 540 are grounded through the second region 550. In other words, this embodiment can isolate the RF grounding area of ​​the RF power amplifier chip 540 from other surrounding areas, preventing the RF energy of each RF power amplifier chip 540 from crosstalking with each other, and preventing the RF power amplifier chip 540 from crosstalking with other chip modules, thereby improving the stability of the RF power amplifier chip and the isolation between RF signals and other types of signals (e.g., analog signals).

[0125] In some embodiments, see Figure 20 , the distance L between the projections of the first area 530 and the second area 550 on the same plane 11 It is greater than or equal to 0.5 times the wavelength corresponding to the operating frequency band of the RF power amplifier chip 540, thereby further ensuring the stability of the RF power amplifier chip 540 and further ensuring the isolation between the RF signal and other types of signals (for example, analog signals).

[0126] In some embodiments, the components configured as ground in the RF power amplifier chip 540 are connected to the second region 550 via bonding wires. Figure 20 The projections of the RF power amplifier chip 540 and the second region 550 on the same plane at least partially overlap, which can avoid a messy layout caused by too long bonding wires and make the layout of the RF front-end module 500 more neat.

[0127] In some embodiments, see Figure 21The RF front-end module 500 also includes an output load circuit 560, which is arranged on the substrate 510. The output load circuit 560 is connected to the output end of the RF power amplifier chip 540. The component 561 configured to be grounded in the output load circuit 560 is grounded through the second area 550, thereby improving the stability of the RF power amplifier chip 540 and improving the isolation between the RF signal and other types of signals (for example, analog signals).

[0128] As an implementation, please refer to Figure 22 The output load circuit 560 includes a first capacitor 570a, a first inductor 520a, a second capacitor 570b and a second inductor 520b. The first end of the first capacitor 570a is connected to the output terminal 541 of the RF power amplifier chip 540, and the second end of the first capacitor 570a is connected to the signal output terminal 580 through the first inductor 520a. The first end of the second inductor 520b is connected to the second end of the first capacitor 570a, and the second end of the second inductor 520b is configured to be grounded through the second region 550. The first end of the second capacitor 570b is connected to the second end of the first inductor 520a, and the second end of the second capacitor 570b is configured to be grounded through the second region 550, thereby ensuring the stability of the RF power amplifier chip 540 and ensuring the isolation between the RF signal and other types of signals (for example, analog signals).

[0129] Please refer to Figure 23 The first inductor 520a includes at least one first inductor winding 521a, and the minimum distance L between the projection of the first inductor winding 521a on the first plane 600 and the projection of the first region 530 on the first plane 600 is 11 Greater than or equal to the width W of the first inductor 520a 10 The width of the first inductor winding 521a is equal to the width W of the first inductor 520a. 10 and / or, the second inductor 520b includes at least one second inductor winding 521b, the minimum distance L between the projection of the second inductor winding 521b on the first plane 600 and the projection of the first region 530 on the first plane 600 12 Greater than or equal to the width W of the second inductor 520b 11 The width of the second inductor winding 521b is equal to the width W of the second inductor 520b. 11 .

[0130] This embodiment can avoid the RF energy from being coupled to the first region 530 due to the first inductor 520a and / or the second inductor 520b being too close to the first region 530, thereby reducing the overall loss and improving the output efficiency of the RF front-end module 500.

[0131] As an implementation, please refer to Figure 24 The distance L between the projection of the first inductor winding 521a on the first plane 600 and the projection of the first region 530 on the same metal layer on the first plane 600 is 111 is the width W of the first inductor 520a 10 The distance L between the projection of the first inductor winding 521a on the first plane 600 and the projection of the first region 530 located in the adjacent metal layer on the first plane 600 is 1 to 2 times of 112 is the width W of the first inductor 520a 10 The distance L between the projection of the first inductor winding 521a on the first plane 600 and the projection of the first region 530 located in the non-adjacent metal layer on the first plane 600 is 0.8 to 1.6 times. 113 is the width W of the first inductor 520a 10 0.7 to 1.4 times of that of the RF front-end module 500, thereby reducing the overall loss, improving the output efficiency of the RF front-end module 500, optimizing the spatial layout, and being more conducive to the miniaturization of the RF front-end module 500 structure.

[0132] As an implementation, please refer to Figure 25 The distance L between the projection of the second inductor winding 521b on the first plane 600 and the projection of the first region 530 on the same metal layer on the first plane 600 is 121 is the width W of the second inductor 520b 11 The distance L between the projection of the second inductor winding 521b on the first plane 600 and the projection of the first region 530 located in the adjacent metal layer on the first plane 600 is 1 to 2 times the distance L between the second inductor winding 521b on the first plane 600 and the projection of the first region 530 located in the adjacent metal layer on the first plane 600 122 is the width W of the second inductor 520b 11 The distance L between the projection of the second inductor winding 521b on the first plane 600 and the projection of the first region 530 located in the non-adjacent metal layer on the first plane 600 is 0.8 to 1.6 times. 123 is the width W of the second inductor 520b 11 0.7 to 1.4 times of that of the RF front-end module 500, thereby reducing the overall loss, improving the output efficiency of the RF front-end module 500, optimizing the spatial layout, and being more conducive to the miniaturization of the RF front-end module 500 structure.

[0133] In some embodiments, see Figure 26The RF power amplifier chip 540 includes a matching circuit 542 and a power amplifier transistor 543. The ground terminal of the power amplifier transistor 543 is configured to be grounded through the second region 550. The components configured to be grounded in the matching circuit 542 are grounded through the second region 550, thereby isolating the ground region of the RF power amplifier chip 540 from other surrounding regions, preventing the RF energy of each RF power amplifier chip 540 from crosstalking with each other, and preventing the RF power amplifier chip 540 from crosstalking with other chip modules, thereby improving the stability of the RF power amplifier chip 540 and improving the isolation between the RF signal and other types of signals (for example, analog signals).

[0134] As an example, the power amplifier transistor 543 can be a metal oxide semiconductor (MOS) field effect transistor, a bipolar junction transistor (BJT), or a heterojunction bipolar transistor (HBT).

[0135] It should be noted that the third embodiment is substantially the same as the first embodiment, so the same parts will not be described again here.

[0136] The above is only an implementation method of the present application. It should be pointed out that for ordinary technicians in this field, improvements can be made without departing from the creative concept of the present application, but these all fall within the scope of protection of the present application.

Claims

1. A radio frequency front-end module, characterized in that: include: A substrate comprising a plurality of metal layers arranged sequentially along a first direction; An inductor, comprising at least one inductor winding, wherein the inductor winding is disposed on the metal layer; A first area is provided on the metal layer, wherein the first area is an area where the ground is laid; There is a gap between a first projection of the inductor winding on a first plane and a second projection of the first region on the first plane, and a minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

2. The RF front-end module according to claim 1, characterized in that: The width of the inductor ranges from 50 μm to 150 μm.

3. The RF front-end module according to claim 1, characterized in that: A minimum distance between the first projection and the second projection is greater than or equal to 0.7 times of a width of the inductor.

4. The RF front-end module according to claim 1, wherein: The metal layer includes a first metal layer, the inductor winding and the first region are arranged on the first metal layer, and the distance between the inductor winding and the first region on the first metal layer is 1 to 2 times the width of the inductor.

5. The RF front-end module according to claim 1, wherein: The metal layer includes a second metal layer and a third metal layer, the second metal layer and the third metal layer are adjacent to each other, the second metal layer is provided with the inductor winding, the third metal layer is provided with the first region, and the distance between the projection of the inductor winding of the second metal layer on the first plane and the projection of the first region of the third metal layer on the first plane is 0.8 to 1.6 times the width of the inductor.

6. The RF front-end module according to claim 1, characterized in that: The metal layer includes a fourth metal layer and a sixth metal layer, the fourth metal layer and the sixth metal layer are not adjacent to each other, the fourth metal layer is provided with the inductor winding, the sixth metal layer is provided with the first region, and the distance between the projection of the inductor winding of the fourth metal layer on the first plane and the projection of the first region of the sixth metal layer on the first plane is 0.7 times to 1.4 times the width of the inductor.

7. The RF front-end module according to claim 1, characterized in that: The RF front-end module also includes an RF power amplifier chip and a second area arranged on the substrate, wherein the second area is an area with a ground, and components configured to be grounded in the RF power amplifier chip are grounded through the second area, and there is a gap between the third projection of the second area on the first plane and the second projection of the first area on the first plane.

8. The RF front-end module according to claim 7, characterized in that: The minimum distance between the third projection of the second area on the first plane and the second projection of the first area on the first plane is greater than or equal to 1 / 2 of the wavelength corresponding to the working frequency band of the radio frequency power amplifier chip.

9. The RF front-end module according to claim 7, characterized in that: The fourth projection of the radio frequency power amplifier chip on the first plane at least partially overlaps with the third projection of the second region on the first plane.

10. The RF front-end module according to claim 7, characterized in that: The RF front-end module also includes an output load circuit arranged on the substrate, the output load circuit is connected to the output end of the RF power amplifier chip, and the components configured to be grounded in the output load circuit are grounded through the second area.

11. The radio frequency front-end module according to claim 10, characterized in that: The output load circuit includes at least one grounded matching element, and the matching element is configured to be grounded through the second region.

12. The radio frequency front-end module according to claim 11, characterized in that: The matching element includes a capacitor, an inductor or a resistor.

13. The radio frequency front-end module according to claim 10, characterized in that: The output load circuit includes an output transformer, and a ground terminal of the output transformer is configured to be grounded through the second region.

14. The radio frequency front-end module according to claim 10, characterized in that: The output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip, the second end of the first capacitor is connected to the signal output end through the first inductor, the first end of the second inductor is connected to the second end of the first capacitor, the second end of the second inductor is configured to be grounded through the second region, the first end of the second capacitor is connected to the second end of the first inductor, and the second end of the second inductor is configured to be grounded through the second region.

15. A radio frequency front-end module, characterized in that: include: A carrier, comprising a plurality of metal layers arranged in sequence along a first direction; An inductor, comprising at least one inductor winding, wherein the inductor winding is disposed on the metal layer; A first area is provided on the metal layer, wherein the first area is an area where the ground is laid; There is a gap between a first projection of the inductor winding on a first plane and a second projection of the first region on the first plane, and a minimum distance between the first projection and the second projection is greater than or equal to 0.5 times the width of the inductor, wherein the first plane is perpendicular to the first direction.

16. The radio frequency front-end module according to claim 15, characterized in that: A minimum distance between the first projection and the second projection is greater than or equal to 0.7 times of a width of the inductor.

17. The radio frequency front-end module according to claim 15, characterized in that: The carrier is a chip or a substrate.

18. A radio frequency front-end module, characterized in that: include: A substrate, and a radio frequency power amplifier chip, a first area, and a second area arranged on the substrate; wherein the first area and the second area are both areas where ground is laid, and the components configured to be grounded in the radio frequency power amplifier chip are grounded through the second area, and the components configured to be grounded in other functional modules of the radio frequency front-end module are grounded through the first area; There is a gap between projections of the first area and the second area on the same plane.

19. The radio frequency front-end module according to claim 18, characterized in that: The minimum distance between the projections of the first area and the second area on the same plane is greater than or equal to 1 / 2 of the wavelength corresponding to the working frequency band of the radio frequency power amplifier chip.

20. The radio frequency front-end module according to claim 18, characterized in that: The projections of the radio frequency power amplifier chip and the second region on the same plane at least partially overlap.

21. The radio frequency front-end module according to claim 18, characterized in that: The RF front-end module also includes an output load circuit arranged on the substrate, the output load circuit is connected to the output end of the RF power amplifier chip, and the components configured to be grounded in the output load circuit are grounded through the second area.

22. The radio frequency front-end module according to claim 21, characterized in that: The output load circuit includes a first capacitor, a first inductor, a second capacitor, and a second inductor. The first end of the first capacitor is connected to the output end of the RF power amplifier chip, the second end of the first capacitor is connected to the signal output end through the first inductor, the first end of the second inductor is connected to the second end of the first capacitor, the second end of the second inductor is configured to be grounded through the second region, the first end of the second capacitor is connected to the second end of the first inductor, and the second end of the second capacitor is configured to be grounded through the second region.

23. The radio frequency front-end module according to claim 18, characterized in that: The radio frequency power amplifier chip includes a matching circuit and a power amplifier transistor. The ground terminal of the power amplifier transistor is configured to be grounded through the second region, and the components configured to be grounded in the matching circuit are grounded through the second region.

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