Semiconductor measurement apparatus and method of manufacturing semiconductor device using same

Abstract

A method of manufacturing a semiconductor device using a semiconductor measurement apparatus includes: extracting an interference pattern using a microsphere; and measuring the distance between the sample and the microsphere based on the interference pattern. A semiconductor measurement device includes: a light source configured to output at least one light; a scanner having a microballoon objective, the scanner configured to allow at least one light to be incident on the sample; a spectrometer configured to obtain a spectrum of light reflected from the sample; and a distance measurement device configured to calculate a microsphere-to-sample distance by analyzing changes in the spectrum.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0105272 filed in the Korean Intellectual Property Office on August 11, 2023, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Various example embodiments relate to a semiconductor measuring apparatus and / or a method of manufacturing a semiconductor device using the same. Background Art

[0004] In general, as semiconductor processes become ultra-precise and / or yield-critical, non-destructive three-dimensional (3D) spectroscopic measurements for process control become increasingly important. Alternatively or additionally, as semiconductor products have ultra-small sizes, the size of the measurement target area (spot size) required for testing and measurement gradually becomes smaller. During spectral measurements, the measurement target area is determined by the performance of the light source, focusing lens, camera, etc. The performance of components used for non-destructive testing is becoming increasingly sophisticated and may have reached its physical and / or optical limits (Rayleigh limits). As a result, research has been conducted to significantly reduce the measurement target area during spectral measurements. Summary of the invention

[0005] Various example embodiments may provide a semiconductor measurement apparatus for improving one or more of stability, accuracy, and speed of a microsphere optical system and / or a method of manufacturing a semiconductor device using the same.

[0006] According to some example embodiments, there is provided a method of manufacturing a semiconductor device using a semiconductor measurement apparatus, the method including: extracting an interference pattern using a microsphere; and measuring a distance between a sample and the microsphere, the measurement being based on the interference pattern.

[0007] Alternatively or additionally, according to various example embodiments, there is provided a method for manufacturing a semiconductor device using a semiconductor measurement apparatus, the method comprising: performing a light spot scanning operation on a sample while moving a scanner having a microsphere objective lens; measuring a microsphere-to-sample distance based on an interference pattern generated in the light spot scanning operation; and compensating for an error of the scanner in the microsphere-to-sample distance.

[0008] Alternatively or additionally, according to various example embodiments, there is provided a method for manufacturing a semiconductor device using a semiconductor measurement apparatus, the method comprising: extracting an interference pattern of light reflected from a sample using a microsphere; and determining at least one of a distance to the sample, a height of the sample, or a thickness of the sample based on a spectrum passing through a microsphere objective lens corresponding to the interference pattern.

[0009] Alternatively or additionally, according to various example embodiments, there is provided a semiconductor measurement device, comprising: a light source configured to output at least one light; a scanner having a microsphere objective lens, the scanner being configured to allow the at least one light to be incident on a sample; a spectrometer configured to obtain a spectrum of light reflected from the sample; and a distance measurement device configured to calculate a microsphere-to-sample distance by analyzing changes in the spectrum.

[0010] Alternatively or additionally, according to various example embodiments, there is provided a computing device comprising: at least one processor; and a memory device configured to store a measurement tool executable on the at least one processor. The measurement tool may be configured to extract an interference pattern corresponding to a spectral variation of light reflected from a sample using a microsphere, and may be configured to determine at least one of a distance from the microsphere to the sample, a height of the sample, or a thickness of the sample based on the interference pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The above and other aspects, features and advantages of various example embodiments will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0012] Figure 1A and Figure 1B is an exemplary diagram showing a narrow area outside a cell of a general memory device;

[0013] Figure 2A and Figure 2B is an exemplary diagram showing a light focusing effect using microspheres and a super-resolution effect of an optical system using microspheres;

[0014] Figure 3 is an example diagram showing specifications and / or features of a microsphere objective lens according to various example embodiments;

[0015] Figure 4A and Figure 4B is a diagram showing a method for measuring SiO using a semiconductor measurement apparatus according to various example embodiments. 2 Reflection spectra obtained for a step wafer and plots of the intensity according to the position of the objective lens;

[0016] Figure 5A is an exemplary diagram showing a semiconductor measuring device according to the prior art using a general position measuring sensor, Figure 5B is an exemplary diagram showing a semiconductor measuring device according to the inventive concept;

[0017] Fig. 6A is an exemplary diagram showing a semiconductor measuring apparatus 10 according to various exemplary embodiments, Figure 6B , Figure 6C and Fig.6Dis an exemplary diagram illustrating a method of measuring a distance by a semiconductor measurement apparatus 10 according to various exemplary embodiments;

[0018] Fig. 7A , Figure 7B and Figure 7C is an exemplary diagram illustrating an operating principle of a semiconductor measuring device 10 according to various exemplary embodiments;

[0019] Figure 8 is an exemplary diagram illustrating a real-time distance measurement process of the semiconductor measurement apparatus 10 according to various exemplary embodiments;

[0020] Fig. 9 is an example diagram illustrating two-dimensional (2D) area scanning of a semiconductor measurement apparatus 10 according to various example embodiments;

[0021] Fig.10 is an example diagram showing a 2D spectrum diagram of the semiconductor measurement apparatus 10 according to various example embodiments;

[0022] Fig.11A is an example diagram showing a height standard sample according to various example embodiments, Fig. 11B is an example diagram showing measurement results of a standard sample according to various example embodiments;

[0023] Fig.12 is an example flow chart illustrating the operation of a semiconductor measurement apparatus according to various example embodiments;

[0024] Fig.13 is an example flow chart illustrating operations of manufacturing a semiconductor device using a semiconductor measurement apparatus according to various example embodiments;

[0025] Fig.14A , Fig. 14B and Fig. 14C is an example diagram illustrating obtaining a reference pattern according to various example embodiments;

[0026] Fig.15 is an example flow chart illustrating the operation of a semiconductor measurement apparatus according to various example embodiments;

[0027] Fig.16A , Fig. 16B and Fig. 16C is an exemplary diagram showing a surface shape of a sample measured by a semiconductor measurement apparatus according to various exemplary embodiments;

[0028] Fig.17 is a flow chart illustrating the operation of a measurement device according to various example embodiments; and

[0029] Fig.18is a block diagram illustrating a computing device 1000 that performs semiconductor measurement operations according to various example embodiments. DETAILED DESCRIPTION

[0030] Hereinafter, some example embodiment concepts will be described clearly and specifically so that those skilled in the art can easily implement and / or practice the example embodiments using the accompanying drawings.

[0031] According to various example embodiments, the semiconductor measurement device and / or the method for manufacturing a semiconductor device using the same may be a super-resolution microsphere optical system to measure the working distance. Here, the microsphere optical system may include an objective lens, a spectrometer, a broadband light source, etc., to which a microsphere is attached. The details of the microsphere optical system will be described in US2022-0049949 and US2023-0028347 applied for by Samsung Electronics Co., Ltd., which are incorporated herein by reference in their entirety. The microsphere optical system may have nanometer (nm) level precision, and the interference phenomenon occurring in the microsphere optical system itself may be used to achieve the height measurement of a microstructure with a spot size of 100nm. Alternatively or additionally, the microsphere optical system may be coaxially mounted with the objective lens. According to various example embodiments, the semiconductor measurement device and / or the method for manufacturing a semiconductor device using the same may enable the height measurement of the microstructure with a smaller spot size, may not require additional configuration of the optical system, may enable the working distance of the objective lens to be directly measured, and may use microspheres to perform ultra-precision position control corresponding to a super-resolution (SR) device.

[0032] Using the method of obtaining spectral measurements through a microscope optical system, due to the diffraction limit, general spectral measurement equipment will have a spot size of at least 5μm and a spatial resolution of 2μm. The measurement area required for testing and measuring recent ultra-miniaturized semiconductor products is in the range of tens of nm to several μm, making it impossible to measure with general spectral measurement equipment.

[0033] Figure 1A and Figure 1B FIG. 1 is an exemplary diagram showing a narrow area outside a cell of a general memory device. Figure 1A As shown in FIG. 1 , in a semiconductor device such as a memory device, a cell block may have a size of several tens of micrometers (μm). Figure 1B As shown, the narrow region outside the cell may have a size of 2 μm. In this case, when a general spectrum measuring device is applied, it may be difficult to measure the outermost portion of the cell and the narrow region outside the cell where the locality problem occurs.

[0034] Figure 2A and Figure 2B is an exemplary diagram showing a light focusing effect using microspheres and a super-resolution effect of an optical system using microspheres. Figure 2A, as or corresponding to one of the technologies introduced to overcome or improve the optical diffraction limit, the measurement method using microspheres can use a focusing effect called a photonic nanojet generated in a sphere with a size (or diameter) of several μm. In general, the photonic nanojet focusing effect can be an innovative phenomenon in which optics and nanotechnology are combined with each other. The photonic nanojet focusing effect can refer to the phenomenon that light is concentrated around a specific nanostructure when the nanostructure is irradiated with light. When a nanostructure or a nanostructure pattern formed of a specific material is irradiated with light at a specific frequency (such as a resonant frequency), this focusing effect focuses the light energy corresponding to the resonant frequency onto the nanostructure. As a result, an optical intensity much greater than the surrounding can be achieved. As described above, photonic nanojets can achieve additional amplification of up to several dozen times, which can greatly improve spatial resolution, and / or can reduce the spot size.

[0035] A general optical system may use various focus control (e.g., autofocus) methods to place the objective lens in an appropriate position. In contrast, in a spectroscopic optical system using microspheres, the general focus control methods cannot work due to various effects such as one or more of a significantly short working distance, chromatic aberration, and multiple reflection phenomena. Therefore, such a microsphere spectroscopic optical system may require or use spectrum acquisition in a focal position such as a dynamically determined (or alternatively, a predetermined) focal position by accurate focus control, because the spectrum of each wavelength as a structure measurement signal is sensitive to changes in the position of the objective lens.

[0036] like Figure 2B As shown, the microsphere optical system can reduce the spot size and / or improve the resolution beyond the diffraction limit. However, due to differences from general optical systems, such as one or more of working distance, chromatic aberration, multiple reflections, etc., focus control may be difficult. The semiconductor measurement device according to various example embodiments includes an ultra-precision focus control technology using distance measurement. The ultra-precision focus control technology can overcome or at least partially overcome difficulties such as a short working distance of 100 nm and / or a spectral sensitivity that requires or expects an accuracy of 10 nm or less, and / or can also be applied to height and thickness measurement of samples.

[0037] Figure 3 is an example diagram showing specifications or expectations of a microsphere objective lens according to various example embodiments. Figure 3 , compared with general optical systems, the working distance of 200nm may be very short. Due to the significantly short working distance, the microsphere spectroscopy optical system may have the risk of collision between the microsphere and the sample. As a result, the measurement equipment using the microsphere spectroscopy optical system may result in a reduction in measurement speed.

[0038] For example, the focus formed by the photonic nanojet effect can be typically positioned at a point close to the microsphere (e.g., only a few microns away). The surface of the sample may need or may be expected to be positioned between the photonic nanojet and the microsphere, so that the sample will actually be positioned very close to the microsphere. The microsphere objective lens may have a working distance of 200nm, so that for safety reasons, the approach speed can be expected to be greatly reduced, which can lead to a reduction in measurement throughput. Therefore, it may be necessary or expected to accurately or more accurately measure the distance between the sample and the microsphere. When it is possible to perform such precise distance measurement, the time required to place the microsphere on the sample surface can be greatly reduced. Alternatively or additionally, unlike general optical systems, in microsphere spectroscopy optical systems, the working distance and depth of focus can be similar to each other. Therefore, it will be difficult to perform repeatable control using the focus alignment method according to the prior art, and it may be necessary or desirable to accurately measure the working distance.

[0039] Figure 4A and Figure 4B FIG. 1 is a diagram showing a method of measuring a semiconductor device from a band step (eg, an oxide SiO2) using a semiconductor measurement device according to various example embodiments. 2 A graph of the reflection spectrum obtained from a wafer with a step and the intensity according to the position of the objective lens. A distance accuracy of 10 nm or less may be required or used depending on the spectral sensitivity of the measurement distance. When a microsphere objective is used, the spectrum can have greatly increased sensitivity due to multiple reflections between the sample and the microspheres. In order to obtain a spectral repeatability of 2%, position control with an accuracy of 10 nm or less may be required.

[0040] Figure 5A is an exemplary diagram showing a semiconductor measuring device according to the prior art using a general position measuring sensor, Figure 5B 2 is an exemplary diagram showing a semiconductor measuring device according to various exemplary embodiments. Figure 5A , in addition to the optical system according to the prior art, a new laser interferometer may be required or used to measure the distance between the objective lens and the sample. However, the laser interferometer may not be mounted coaxially or collinearly with the objective lens-sample. As a result, the semiconductor measurement device according to the prior art may not be able to accurately measure the distance between the sample and the microsphere. Alternatively or additionally, a general distance measurement sensor may have a light spot size that is several tens of times larger than that of the microsphere optical system, and thus may not be able to measure the height of the microstructure. In contrast, the semiconductor measurement device according to various example embodiments may include a microsphere optical system mounted coaxially or collinearly with the objective lens-sample, and thus may measure the height of the microstructure using a photonic nanojet focusing effect relative to the microsphere, such as Figure 5B shown.

[0041] Fig. 6A 1 is an exemplary diagram showing a semiconductor measuring device 10 according to various exemplary embodiments. Fig. 6A, the semiconductor measurement device 10 may include a microsphere 110, an objective lens 120, an objective lens position controller 130, a first optical system 140, a second optical system 150, a camera 160, a spectrometer 200, a light source 300, and a distance measurement device 400. Here, the microsphere 110, the objective lens 120, the objective lens position controller 130, the first optical system 140, the second optical system 150, and the camera 160 may be collectively referred to as a scanner.

[0042] The substrate 101 may be loaded on a stage. Here, the stage may be provided in the semiconductor measuring apparatus 10. A semiconductor pattern such as a grating pattern may be formed on an upper surface of the substrate 101.

[0043] The microsphere 110 may be disposed on the upper surface of the stage. For example, the microsphere 110 may be disposed between the upper surface of the stage and the objective lens 120. The microsphere 110 may be spaced apart from each of the substrate 101 and the objective lens 120 disposed on the stage. In some example embodiments, the microsphere 110 may be in the form of a sphere. However, it should be understood that the shape of the microspheres of various example embodiments is not limited thereto. The microsphere 110 may include a dielectric material having a refractive index of 1 or more. For example, the microsphere 110 may include soda-lime glass. In some example embodiments, the first light and the second light passing through the microsphere 110 may be focused on a focal point to be formed on the substrate 101. The focal point may be formed on the surface of the semiconductor pattern formed on the substrate 101. In some example embodiments, the microsphere 110 may have a diameter in the range of 1 μm to 100 μm in a first horizontal direction parallel to the upper surface of the stage. For example, the diameter of the microsphere 110 may be formed to be about 1 / 300 or less of the diameter of the objective lens 120. The microsphere 110 having a diameter much smaller than that of the objective lens 120 may be used to effectively focus at least one broadband light provided from the objective lens 120 onto a focal point formed on the substrate 101 .

[0044] Light may pass through the microsphere 110 and then may be reflected to a focal point. The light reflected to the focal point may be defined as reflected light. The reflected light may sequentially pass through the objective lens 120 and the beam splitter 151 and be provided to the spectrometer 200. The spectrometer 200 may test the semiconductor pattern formed on the substrate 101 by detecting the reflected light.

[0045] The objective lens 120 may be disposed on the upper surface of the stage. The objective lens 120 may be disposed between the stage and the beam splitter 141 on a path through which light passes. The light provided from the beam splitter 141 may pass through the objective lens 120 and be focused on the microsphere 110.

[0046] The objective lens position controller 130 may be connected to the objective lens 120. The objective lens position controller 130 may move the objective lens 120 in a vertical direction (e.g., Z direction) perpendicular to the substrate 101. In some example embodiments, the objective lens position controller 130 may be controlled by the distance measuring device 400. The objective lens position controller 130 may include a lead zirconate titanate (PZT) actuator. Generally, a PZT material may have a piezoelectric effect. The piezoelectric effect may refer to a property that when an electric field is applied to the PZT material, the size or shape of an object is deformed due to the movement of the internal atoms of the material. The PZT actuator may be deformed or moved according to an electrical input signal. When an electric field is applied, the PZT material may be deformed and / or movable. This deformation may be achieved in various forms according to the structure and design of the actuator. The PZT actuator may provide high precision and / or fast response speed.

[0047] The first optical system 140 may include a beam splitter 141 and at least one lens 142, 143 or 144. The beam splitter 141 may be disposed on a path through which light passes. The beam splitter 141 may reflect a portion of the light provided from the light source 300 and may provide the light to the objective lens 120. In addition, the beam splitter 141 may transmit the remaining portion of the light provided from the light source 300.

[0048] At least one lens 142, 143, or 144 may be disposed between the light source 300 and the beam splitter 141 on a path through which light passes. In some example embodiments, at least one polarizer may be disposed between the lens 142, 143, or 144 and the beam splitter 141 on a path through which light passes. For example, light provided from the light source 300 may sequentially pass through the lens 142 and the polarizer and be provided to the beam splitter 141. In some example embodiments, at least one lens 142, 143, or 144 may be or may include a convex lens. For example, the lens 142 may change the angular distribution of light provided from the light source 300 and provide the light to the polarizer. The polarizer may polarize the light provided from the first lens 142 in one direction and provide the light to the beam splitter 141. In some example embodiments, the first optical system 140 may further include an aperture between the lenses 142, 143, and 144.

[0049] The second optical system 150 may include a beam splitter 151 and a lens 152. The beam splitter 151 and the lens 152 may be disposed on a path through which the reflected light passes. The lens 152 may be disposed between the beam splitter 141 and the beam splitter 151 on the path through which the reflected light passes. In some example embodiments, the lens 152 may be or may include a convex lens. The reflected light reflected from the focus may sequentially pass through the lens 152 and the beam splitter 151 and be provided to the spectrometer 200.

[0050] The camera 160 may be implemented to detect the reflected light of the first light and the second light passing through the beam splitter 151. The camera 160 (two-dimensional (2D) array detector) may be, for example, a charge coupled device (CCD) camera, may include, for example, a charge coupled device (CCD) camera, or may be included in, for example, a charge coupled device (CCD) camera. It should be understood that the camera 160 is not limited to a CCD camera. The camera 160 may be used on an image plane as a general microscope imaging, and may be used to identify a measurement position in an object plane and an optimal focus position in an optical axis direction.

[0051] The spectrometer 200 may be implemented to obtain a spectrum of light reflected from the beam splitter 151 of the second optical system 150 .

[0052] The light source 300 may be implemented to output at least one broadband light. In example embodiments, the light source 300 may be implemented to extract light having a desired wavelength from light having a plurality of wavelengths. In some example embodiments, the light source 300 may provide the first light or the second light from the light having a plurality of wavelengths to the substrate 101 disposed on the stage.

[0053] The distance measuring device 400 may be implemented to control the overall operation of the semiconductor measuring device 10. For example, the distance measuring device 400 may be implemented so that a broadband light source is irradiated to the sample through the illumination optical system, the reflection spectrum is measured by the spectrometer 200, and the position of the microsphere objective lens is controlled simultaneously with the measurement of the spectrum. The distance measuring device 400 may measure the spectrum change caused by the minimum position change of the objective lens 120, and may calculate the distance between the sample and the microsphere by analyzing such spectrum change.

[0054] The semiconductor measurement apparatus 10 according to various example embodiments may determine a focal position based on a spectrum using interference generated in the microsphere optical system itself without an additional interferometer configuration, thereby allowing accurate distance measurement.

[0055] Figure 6B , Figure 6C and Fig.6D 1 is an exemplary diagram illustrating a method of measuring a distance by the semiconductor measuring device 10 according to various exemplary embodiments. Figure 6B As shown, the objective lens position controller 130 can move the microsphere objective lens. Here, the microsphere objective lens can be moved by a PZT actuator. Generally, when a voltage is applied to the PZT actuator, the internal molecules of the PZT actuator can be aligned, so the ceramic plate can be slightly lengthened or shortened. Figure 6C As shown in FIG. 1 , the spectral changes according to the movement of the microsphere objective lens can be measured. Fig.6D As shown, the distance between the microsphere and the sample can be calculated based on the measured interference pattern.

[0056] Fig. 7A , Figure 7B and Figure 7C 1 is an exemplary diagram showing the operating principle of the semiconductor measuring device 10 according to various exemplary embodiments. Fig. 7A As shown, the semiconductor measurement device 10 can use interference caused by multiple reflections occurring between the microsphere and the sample. O may be or may represent or be based on the intensity of the incident light, I R It can be or can represent or be based on the intensity of reflected light, and d can be the distance from the microsphere to the sample. Figure 7B As shown, constructive interference (mλ=2d) and destructive interference ((m+1 / 2)λ=2d) may occur alternately depending on the distance (d) between the microsphere and the sample. In general, the interference pattern may depend on the wavelength (λ) and the distance (d). Figure 7C As shown, when a change in an interference pattern according to wavelength is measured, the distance (d) between the microsphere and the sample corresponding to the change in the measured interference pattern can be calculated using the following formula.

[0057] [Formula 1]

[0058] ΔI(λ)=I(λ,d+δ)-I(λ,d)=0

[0059] Here, δ may be or may correspond to a small change in the distance between the microsphere and the sample. Figure 7B As shown, when the distance between the microsphere and the sample changes slightly, the change in the spectrum can be used to measure the interference pattern as a function of wavelength.

[0060] Figure 8 1 is an exemplary diagram illustrating a real-time distance measurement process of the semiconductor measurement apparatus 10 according to various exemplary embodiments. When the microsphere 110 approaches the sample surface, the semiconductor measurement apparatus 10 may perform real-time distance measurement. Figure 8 , real-time distance measurement can be performed in the following order. By moving the scanner (including the microsphere objective lens), the microsphere 110 can be moved at intervals of 10nm in the direction of the sample. While moving the microsphere 110, the distance measuring device 400 can measure the spectrum. The distance measuring device 400 can extract the interference pattern at each measurement interval. The distance measuring device 400 can calculate the distance to the sample by comparing with the theoretical formula. The semiconductor measuring device 10 according to various exemplary embodiments can further improve the accuracy according to the performance of the scanner and the spectrometer. In addition, the semiconductor measuring device 10 according to various exemplary embodiments can move to the target position after measuring the distance once, rather than measuring the distance at all positions, thereby minimizing the approach time.

[0061] Fig. 9 2D area scanning of the semiconductor measuring device 10 according to various exemplary embodiments is shown in FIG. Fig. 9, the semiconductor measurement apparatus 10 according to various example embodiments may move the microball 110 to a target position quickly and accurately, and may obtain a spectrum in a 2D space using the microball 110 .

[0062] 2D scanning may require or use distance measurements of: first, sample height changes during XY stage movement, and second, distance changes between microspheres and samples due to stage and scanner drift. Both height changes increase the risk of collisions between microspheres and samples, and may also reduce spectral repeatability. Therefore, scanning 2D space without precise position measurements can have significant negative impacts on safety and accuracy.

[0063] Fig.10 2D spectrum diagrams of the semiconductor measurement apparatus 10 according to various example embodiments. Fig.10 , the semiconductor measurement device 10 can measure the distance between the microsphere 110 and the sample, and can maintain the distance between the microsphere 110 and the sample, such as a dynamically determined (or alternatively, a predetermined) distance, when measuring the spectrum, thereby reducing the risk of collision and / or improving the accuracy of the spectrum measurement. Here, the distance measurement can be performed in a unit area of ​​the sample. In addition, even when the stage drifts by several μm while measuring the spectrum, the measurement can be safely completed by position measurement. Once the stability of the stage is ensured, the structural measurement can be performed by measuring the height of the sample.

[0064] Fig.11A is an example diagram showing a height standard sample according to various example embodiments, Fig. 11B is an example diagram showing the measurement results of standard samples according to various example embodiments. The distance measurement method of the semiconductor measurement device according to various example embodiments can also measure the surface shape of the sample. In order to verify the corresponding function, the height of the position of the standard sample can be measured. As a result of the measurement, a step of 100nm can be measured. In this case, it can be determined that the deviation and poor repeatability included in the measurement are caused by the performance of the stage. When the device is improved for height measurement, the performance can be improved to an accuracy of up to 1nm in the height direction and to an accuracy of up to 100nm in the X direction according to the principles of various example embodiments.

[0065] The semiconductor measurement apparatus 10 according to various example embodiments and the method of manufacturing a semiconductor device using the same realizes an accurate distance measurement method applicable to an ultra-high resolution optical system including the microsphere 110. The semiconductor measurement apparatus 10 according to various example embodiments can measure the distance between the microsphere and the sample with an accuracy of several nm in the region of several tens of μm. The semiconductor measurement apparatus 10 according to various example embodiments can not only improve one or more of the safety, operating speed, and accuracy of the microsphere optical system by allowing real-time accurate distance measurement, but can also be applied to measure the height and / or thickness of the sample alternatively or additionally.

[0066] Fig.12 is an example flow chart showing the operation of a semiconductor measuring device according to various example embodiments. Fig.12 , the operation of the measuring device may be performed as follows. An interference pattern may be extracted using a microsphere (S110). In some example embodiments, a first spectrum may be measured, a microsphere objective lens may be moved in a direction perpendicular to the sample, a second spectrum may be measured, a spectral difference between the first spectrum and the second spectrum may be calculated, and an interference pattern corresponding to the spectral difference may be calculated. A distance may be measured based on the extracted interference pattern (S120). In some example embodiments, the calculated interference pattern and a reference pattern may be compared with each other, and a distance between the microsphere and the sample corresponding to the comparison result may be calculated.

[0067] In some example embodiments, the measurement position of the microsphere objective lens can be set. In some example embodiments, the microsphere objective lens can be moved less than 10 nm by a PZT (lead zirconate titanate) actuator. In some example embodiments, a reference pattern can be set. In some example embodiments, the microsphere can be implemented as a spherical, hemispherical, or rod shape. In some example embodiments, the microsphere can be fixed below a predetermined distance from the objective lens. In some example embodiments, a spot scanning operation can be performed while maintaining a constant height of the microsphere objective lens. In some example embodiments, during the spot scanning operation, the position of the scanner and the distance between the microsphere and the sample can be measured, and the error in the distance from the microsphere to the sample corresponding to the position of the scanner can be corrected or at least partially corrected.

[0068] Fig.13 1 to 11 and 12 are example flow charts illustrating operations of manufacturing a semiconductor device using a semiconductor measurement apparatus according to various example embodiments. Fig.13, the operation of the semiconductor measuring device can be performed as follows. A measurement position can be set (S210). A first spectrum can be measured at the measurement position (S220). The microsphere objective lens can be moved in a vertical direction (Z direction) (S230). For example, the moving step size can be 10 nm or less. A second spectrum can be measured at the measurement position (S240). The difference between the first spectrum and the second spectrum can be calculated (S250). An interference pattern corresponding to such a spectral difference can be calculated (S260). A reference pattern and the calculated interference pattern can be compared with each other (S270). A distance can be calculated based on the comparison result (S280). For example, a semiconductor device can be manufactured based on the distance (S290).

[0069] Fig.14A , Fig. 14B and Fig. 14C is an example diagram showing how to obtain a reference pattern according to various example embodiments. Fig.14A As shown in , interference patterns can be measured in real optical systems. Fig. 14B As shown, the measured interference pattern can be mλ m =2dr to fit. Fig. 14C As shown, a reference pattern matching the theoretical equation can be obtained from the fitted interference pattern. The semiconductor measurement apparatus 10 according to various example embodiments can obtain a reference pattern based on data measured to reflect properties of an actual optical system, a spectrometer, a stage, etc.

[0070] Various example embodiments may be used to measure the shape and / or steps of a sample.

[0071] Fig.15 is an example flow chart showing the operation of a semiconductor measuring device according to various example embodiments. Fig.15 , the semiconductor measurement device 10 may measure the shape / step of the sample as follows. A scanner having a microsphere objective lens may be used to perform a light spot scanning operation (S310). In some example embodiments, a PZT actuator may be used to move the scanner. In some example embodiments, the light spot scanning operation may have a resolution corresponding to a light spot of 100 nm or less. The microsphere-to-sample distance may be calculated based on an interference pattern corresponding to the light spot scanning operation (S320). In some example embodiments, a spectrum of light reflected from the surface of the sample may be measured, an interference pattern may be extracted from the measured spectrum, a reference pattern may be compared with the extracted interference pattern, and the microsphere-to-sample distance may be calculated based on the comparison result. An error in the microsphere-to-sample distance corresponding to the position of the scanner may be compensated (S330). In some example embodiments, the scanner may perform real-time distance measurement to prevent collision with the sample due to stage vibration or sample height change.

[0072] Fig.16A , Fig. 16B and Fig. 16C 1 is an exemplary diagram showing a surface shape of a sample measured by a semiconductor measurement device according to various exemplary embodiments. Fig.16A As shown, the light spot scanning operation can be performed while maintaining a predetermined height of the microsphere objective lens. Fig. 16B As shown in Figure 1, the position of the scanner and the distance from the microsphere to the sample can be measured at the spot scanning position. Fig. 16C As shown, errors in the microsphere-to-sample distance corresponding to the position of the scanner can be compensated. In order to improve measurement results, it may be necessary or desirable to improve the scanner performance.

[0073] Fig.17 is a flow chart illustrating the operation of a measuring device according to various example embodiments. Fig.17 , the measuring device may operate as follows. An interference pattern may be extracted using a microsphere (S410). One or more of a distance, a height, or a thickness may be determined based on a spectrum measured by a microsphere objective (S420). In some example embodiments, a focal position may be determined based on a spectrum measured on a surface of a sample. In some example embodiments, an interference pattern and a reference pattern may be compared to each other. Here, a reference pattern may be obtained based on data measured to reflect the properties of an optical system, a spectrometer, or a stage. In some example embodiments, the distance from the microsphere to the sample may be compensated or at least partially compensated corresponding to the position of the scanner.

[0074] In general, microspheres can simply overcome the optical diffraction limit by improving the microscope optical system according to the prior art. The working distance measurement of the semiconductor measurement apparatus and the microsphere optical system using the same according to various example embodiments can enable non-destructive testing and measurement of semiconductors using microspheres. Various example embodiments can be applied to all application devices for identifying whether one or more of distance, height, thickness, etc. is determined based on the spectrum measured by the microsphere objective lens.

[0075] Fig.18 1 is a block diagram illustrating a computing device 1000 that performs semiconductor measurement operations according to various example embodiments. Fig.18 , the computing device 1000 may include at least a processor 1100, a memory device 1200, an input / output device 1300, and a storage device 1400. Through the system bus, the processor 1100, the memory device 1200, the input / output device 1300, and the storage device 1400 may be electrically connected to each other and may exchange data with each other. The configuration of the system bus is not limited to the above configuration, and may also include intermediate measures for effective management.

[0076] At least one processor 1100 may be implemented to control the overall operation of the computing device 1000. The processor 1100 may be implemented to execute at least one instruction. For example, the processor 1100 may be implemented to execute software (applications, operating systems, and device drivers) to be executed in the computing device 1000. The processor 1100 may execute an operating system loaded into the memory device 1200. The processor 1100 may execute various applications driven based on the operating system. For example, the processor 1100 may drive a rendering tool read from the memory device 1200. In some example embodiments, the processor 1100 may be or include, or be included in one or more of a central processing unit (CPU), a microprocessor, an application processor (AP), or any processing device similar thereto. In some example embodiments, the processor 1100 may be implemented to execute a measurement tool 1210.

[0077] The memory device 1200 may be implemented to store at least one instruction. For example, the memory device 1200 may be loaded with an operating system or an application program. During the booting of the computing device 1000, the OS image stored in the storage device 1400 may be loaded into the memory device 1200 based on the booting sequence. The input and output operations of the computing device 1000 may be supported by the operating system. Similarly, the application program may be loaded into the memory device 1200 to provide a service or basic service selected by the user.

[0078] In particular, the measuring tool 1210 for measuring distance / height / thickness may be loaded from the storage device 1400 into the memory device 1200. The measuring tool 1210 may be loaded by controlling the memory device 1400 with reference to FIGS. 1 to 1400. Fig.17 The semiconductor measurement device and its operation described herein are used to measure the distance / height / thickness of a sample. The measuring tool 1210 may use a microsphere to extract an interference pattern corresponding to a change in the spectrum of light reflected from the sample, and may determine the microsphere-to-sample distance, the height of the sample, or the thickness of the sample based on the interference pattern. In an example embodiment, the measuring tool 1210 may calculate the microsphere-to-sample distance by comparing the interference pattern with a reference pattern. In an example embodiment, the measuring tool 1210 may compensate for an error in the microsphere-to-sample distance corresponding to the position of the scanner. In some example embodiments, the measuring tool 1210 may obtain spectral changes while changing the position of the scanner to perform a light spot scanning operation.

[0079] In some example embodiments, the memory device 1200 may be or may include a volatile memory (e.g., one or more of a dynamic random access memory (DRAM), a static random access memory (SRAM), etc.) and / or a non-volatile memory (e.g., one or more of a flash memory, a phase change random access memory (PRAM), a resistive random access memory (RRAM), a nano floating gate memory (NFGM), a polymer random access memory (PoRAM), a magnetic random access memory (MRAM), a ferroelectric random access memory (FRAM), etc.).

[0080] The input / output device 1300 may be implemented to control the input and output of the user from the user interface device. For example, the input / output device 1300 may include input means such as a keyboard, a keypad, a mouse, and a touch screen to receive information from the designer. The designer may use the input / output device 1300 to receive information about the semiconductor region or data path of the operating properties that need to be adjusted. In addition, the input / output device 1300 may include output means such as a printer, a display, etc. to display the process and results of the rendering tool.

[0081] The storage device 1400 may be provided as a storage medium of the computing device 1000. The storage device 1400 may store application programs, OS images, and measurement tools. The storage device 1400 may be provided in the form of one or more large-capacity storage devices or may include, for example, a memory card (one or more of MMC, eMMC, SD, Micro SD, etc.), a hard disk drive (HDD), a solid-state drive (SSD), a universal flash memory (UFS), etc., or included therein.

[0082] The above-mentioned device can be implemented as a combination of hardware components, software components and / or hardware components and software components. For example, one or more general or special-purpose computers can be used to implement the devices and components according to various example embodiments, such as processors, controllers, arithmetic logic units (ALUs), digital signal processors, microcomputers, field programmable gate arrays (FPGAs), programmable logic units (PLUs), microprocessors, or any other device capable of executing and responding to instructions. The processing device may include an operating system (OS) and one or more software applications executed on the operating system. In addition, the processing device may also access, store, manipulate, process, and generate data in response to the execution of the software. For ease of understanding, in some cases, a processing device is described that uses a single processing element, but a person of ordinary skill in the art may recognize that the processing device may include multiple processing elements or multiple types of processing elements. For example, the processing device may include multiple processors or a processor and a controller. In addition, other processing configurations are also possible, such as parallel processors.

[0083] Software may include computer programs, codes, instructions, or one or more combinations thereof, and may configure a processing device to operate as desired, or may independently or collectively instruct a processing device. Software and / or data may be embodied in any type of machine, component, physical device, virtual device, computer storage medium, or device to be interpreted by a processing device, or to provide instructions or data to a processing device. Software may also be distributed over a network on a computer system, and may be stored or executed in a distributed manner. Software and data may be stored on one or more computer-readable recording media.

[0084] The semiconductor measurement device according to various example embodiments may include a broadband light source, a spectrometer, an objective lens including a microsphere, and a position control device of an optical system. The distance measurement method of the semiconductor measurement device according to various example embodiments may include: obtaining a spectrum at one or more positions with a small displacement difference; obtaining an interference pattern by spectrum change analysis; and using the interference pattern to measure the distance between the microsphere and the sample. In some example embodiments, the microsphere is not limited to a sphere, and can be implemented in the form of generating a focusing effect. For example, the microsphere can be used in the form of a hemisphere and a rod. In some example embodiments, the optical system position control device can be any control device capable of transmitting the objective lens or the entire optical system in a direction perpendicular to the ground. In some example embodiments, the objective lens (including the microsphere fixed thereto) can be implemented in the form of a microsphere being positioned at a predetermined distance below the objective lens. Here, any method that does not interfere with the optical path (for example, fixing using an optical adhesive or an instrument) can be used as a method for fixing the microsphere.

[0085] According to various example embodiments, collision between a microsphere and a sample may be prevented by precise distance measurement, thereby improving safety. Alternatively or additionally, according to various example embodiments, safety may be ensured based on real-time distance measurement, and working speed may be improved by increasing the control speed of the microsphere. Alternatively or additionally, according to various example embodiments, working distance may be maintained by precise distance measurement, and spectral measurement repeatability may be improved. Alternatively or additionally, according to various example embodiments, an operation may be performed at an imaging position, and the height of a microstructure may be measured.

[0086] Alternatively or additionally, according to various example embodiments, there is a distance measurement technique that can be used when performing super-resolution spectroscopy using microspheres. Spectral measurements according to the prior art may not provide a resolution corresponding to the critical dimension (CD) value of increasingly miniaturized semiconductor processes, so the demand for modern techniques has been increasing, and a microsphere optical system that achieves super-resolution is one of the modern techniques. The microsphere optical system has many differences from the optical system according to the prior art, so modern techniques are needed. This technique is applicable to most techniques (imaging, spectroscopy, etc.) using microspheres, and is also applicable to sample surface shape measurement and thickness measurement.

[0087] In semiconductor measurement devices and methods for manufacturing semiconductor devices using the same according to various example embodiments, control may be performed to ensure sample safety, repeatability, and accuracy of a spectrometer using microspheres. In semiconductor measurement devices and manufacturing methods according to various example embodiments, measurement repeatability may be improved by position control technology with an accuracy of 10 nm or less. Alternatively or additionally, according to semiconductor measurement devices and manufacturing methods conceived in the present invention, sample safety and optical system freedom from collision problems may be ensured even at very short working distances. In semiconductor measurement devices and manufacturing methods according to various example embodiments, throughput may be improved by fast and accurate microsphere control.

[0088] Semiconductor measurement equipment according to various example embodiments can use microspheres to achieve super-resolution without problems such as sample destruction or contamination. In particular, when applied to semiconductor spectral measurement, testing and measurement can be performed on non-repetitive structures and unit exteriors based on high resolution. According to various example embodiments, due to various properties such as the short working distance of the microspheres, the spectral sensitivity to the working distance, etc., the microspheres can be controlled in one or more ways of safety, speed and accuracy for spectral measurement. The distance measurement technology according to various example embodiments can enable the microspheres to be safely, quickly and accurately controlled, thereby promoting the commercialization of the technology using the microspheres. Alternatively or additionally, according to various example embodiments, the measured distance can be used to analyze the sample surface shape or measure the thickness. The measurement result can have super-resolution, and therefore can be suitable for testing and measuring semiconductors with microstructures compared to the technology according to the prior art.

[0089] In a semiconductor measuring apparatus and a method of manufacturing a semiconductor device using the same according to various example embodiments, precise distance measurement may be performed using an interference effect generated in a microsphere optical system itself.

[0090] Alternatively or additionally, collisions with the sample may be prevented by measuring the distance in real time.

[0091] Alternatively or additionally, a fast and precise control can be performed during the distance measurement.

[0092] Alternatively or additionally, distance measurements may be performed at the imaging location and height measurements of the micro-areas may be performed.

[0093] Any of the elements and / or functional blocks disclosed above may include or be implemented in a processing circuit, such as hardware including logic circuits; a hardware / software combination, such as a process that executes software; or a combination thereof. For example, more specifically, the processing circuit may include (but is not limited to) a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a system on a chip (SoC), a programmable logic unit, a microprocessor, an application specific integrated circuit (ASIC), etc. The processing circuit may include an electrical component such as at least one of a transistor, a resistor, a capacitor, etc. The processing circuit may include an electrical component such as a logic gate, including at least one of an AND gate, an OR gate, a NAND gate, a NOT gate, etc.

[0094] Although various example embodiments are shown and described above, it will be apparent to those of ordinary skill in the art that modifications and variations may be made without departing from the scope of the inventive concept as defined by the appended claims. In addition, the example embodiments are not necessarily mutually exclusive. For example, some example embodiments may include one or more features described with reference to one or more figures, and may also include one or more other features described with reference to one or more other figures.

Claims

1. A method for manufacturing a semiconductor device using a semiconductor measuring device, comprising: Use microspheres to extract interference patterns; as well as The distance between the sample and the microspheres is measured based on the interference pattern.

2. The method according to claim 1, further comprising: Set the measurement position of the microsphere objective.

3. The method according to claim 1, wherein: Extracting the interference pattern comprises: measuring a first spectrum; Moving a microsphere objective lens structure including the microsphere and the objective lens in a direction perpendicular to the surface of the sample; measuring a second spectrum; calculating a spectral difference between the first spectrum and the second spectrum; and The interference pattern corresponding to the spectral difference is calculated.

4. The method according to claim 3, wherein: Moving the microsphere objective lens includes moving the microsphere objective lens by 10 nm or less using a lead zirconate titanate actuator.

5. The method according to claim 3, wherein: Measuring the distance comprises: comparing the calculated interference pattern and a reference pattern to each other; and The distance between the microsphere and the sample corresponding to the comparison result is calculated.

6. The method according to claim 5, further comprising: The reference pattern is set.

7. The method according to claim 1, wherein: The microspheres are in at least one of a spherical shape, a hemispherical shape, and a rod shape.

8. The method according to claim 1, wherein: The microspheres are fixed to the lower part of the objective lens at a fixed distance.

9. The method according to claim 1, further comprising: A light spot scanning operation is performed while maintaining a height of a microsphere objective lens including the microsphere and the objective lens.

10. The method according to claim 9, further comprising: measuring the position of the scanner and the microsphere-to-sample distance during the spot scanning operation; as well as Errors in the microsphere-to-sample distance corresponding to the position of the scanner are compensated.

11. A method for manufacturing a semiconductor device using a semiconductor measuring device, comprising: While moving a scanner having a microsphere objective lens, performing a light spot scanning operation on the sample; measuring a microsphere-to-sample distance based on an interference pattern generated during the light spot scanning operation; as well as Compensate for the scanner's errors in the microsphere-to-sample distance.

12. The method according to claim 11, wherein: Performing the spot scanning operation includes moving the scanner using a lead zirconate titanate actuator.

13. The method according to claim 11, wherein: Measuring the distance from the microsphere to the sample includes: measuring a spectrum of light reflected from a surface of the sample; extracting an interference pattern from the measured spectrum; comparing a reference pattern and the extracted interference pattern to each other; and The microsphere-to-sample distance is calculated based on the comparison results.

14. The method according to claim 11, wherein: Real-time distance measurements are performed to reduce collisions with the sample due to at least one of stage vibrations or changes in sample height.

15. The method according to claim 11, wherein: The light spot scanning operation has a resolution corresponding to a light spot of 100 nm or less.

16. A method for manufacturing a semiconductor device using a semiconductor measurement device, comprising: Extracting the interference pattern of light reflected from the sample using microspheres; as well as At least one of a distance to the sample, a height of the sample, or a thickness of the sample is determined based on a spectrum of light passing through a microsphere objective lens corresponding to the interference pattern.

17. The method according to claim 16, further comprising: A focus position is determined based on the spectrum measured on the surface of the sample.

18. The method according to claim 16, further comprising: The interference pattern and a reference pattern are compared with each other.

19. The method according to claim 18, further comprising: The reference pattern is obtained based on data measured to reflect a property of at least one of an optical system, a spectrometer, or a stage.

20. The method of claim 16, further comprising: Compensate for errors in the microsphere-to-sample distance corresponding to the position of the scanner.

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