Liquid supplementing device and semiconductor process equipment

By setting up a decomposition device in the oxidation equipment to pre-decompose the liquid source, the problem of incomplete decomposition of the DCE liquid source before entering the process chamber is solved, the quality of the silicon dioxide film is improved and the exhaust gas backfilling is avoided .

CN119495591AActive Publication Date: 2025-02-21BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
CN202311028820.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-08-15
Publication Date
2025-02-21
Estimated Expiration
2043-08-15

AI Technical Summary

Technical Problem

In existing oxidation equipment, the DCE liquid source is incompletely decomposed before entering the process chamber, resulting in defects in the prepared silica film and particles exceeding the standard, and the oxidation equipment is prone to the problem of exhaust gas back-sinking during the process.

Method used

A liquid replenishment device is designed, including a liquid source input assembly and a decomposition device, which has a decomposition chamber for decomposing the liquid source, and the outlet of the decomposition chamber is connected to the inlet of the ignition chamber, so as to before the liquid source enters the process chamber Perform a thorough decomposition.

Benefits of technology

By setting up a decomposition device upstream of the ignition chamber, the decomposition rate of the liquid source is significantly improved, the possibility of deterioration points in the preparation of the silica film is reduced, the quality of the film is improved, and the problem of exhaust gas back-sinking is avoided.

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Abstract

The invention provides a liquid supplementing device and semiconductor process equipment, relates to the technical field of semiconductors, and is designed for solving the problem that a liquid source in the liquid supplementing device is not completely decomposed before entering a process chamber. The liquid supplementing device is applied to the semiconductor process equipment, the semiconductor process equipment comprises an ignition chamber and a process chamber, the liquid supplementing device comprises a liquid source input assembly and a decomposer, the decomposer is provided with a decomposition cavity, the decomposition cavity is used for decomposing a liquid source, and an inlet of the decomposition cavity is communicated with an outlet of the liquid source input assembly; an outlet of the decomposition cavity is used for communicating with an inlet of an ignition chamber, and an outlet of the ignition chamber communicates with a gas inlet of a process chamber of the semiconductor process equipment. The liquid supplementing device provided by the invention can improve the decomposition rate of the liquid source before the liquid source enters the process chamber.
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Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a liquid replenishing device and semiconductor process equipment. Background Art

[0002] The key parts of the oxidation equipment in semiconductor process equipment include the air intake device, ignition chamber, process chamber and exhaust device. The wafer is deposited in the process chamber using the oxidant in a high temperature chamber to prepare a silicon dioxide film. Dichloroethane (DCE), chemical formula: Cl(CH 2 ) 2 Cl, formula weight: 99, namely o-dichloroethane, is a kind of halogenated hydrocarbon, colorless or light yellow transparent liquid, insoluble in water, usually used as an intermediate in the preparation process of vinyl chloride (polyvinyl chloride monomer), also used as a solvent, etc., is a high-purity chlorine source. In the semiconductor preparation process, it is mainly used to accelerate the oxidation of silicon wafers and clean furnace tubes in the wafer manufacturing process. At present, the oxidation equipment uses a DCE liquid replenishment device to increase the speed of growing silicon dioxide film, but it is currently facing the following problems:

[0003] 1. Client construction, replacement of DCE refill bottles or disassembly of DCE pipelines will cause DCE liquid source pollution, which will cause the prepared silica membrane particles to exceed the standard.

[0004] 2. DCE is not completely decomposed before entering the chamber, which will cause defects in the prepared silicon dioxide film.

[0005] 3. During the process of oxidation equipment, hydrogen chloride is used to clean the chamber. Some exhaust gas will remain in the exhaust pipe, which will cause the exhaust gas to flow back into the chamber. Summary of the invention

[0006] The first object of the present invention is to provide a liquid replenishing device to solve the technical problem of incomplete decomposition of the liquid source before entering the process chamber in the liquid replenishing device in the prior art.

[0007] The liquid replenishing device provided by the present invention is applied to semiconductor process equipment, which includes an ignition chamber and a process chamber. The liquid replenishing device includes a liquid source input component and a decomposer. The decomposer has a decomposition chamber, which is used to decompose the liquid source. The inlet of the decomposition chamber is connected to the outlet of the liquid source input component, and the outlet of the decomposition chamber is used to connect to the inlet of the ignition chamber. The outlet of the ignition chamber is connected to the gas inlet of the process chamber of the semiconductor process equipment.

[0008] The beneficial effects brought by the fluid replenishment device of the present invention are:

[0009] By setting a decomposer upstream of the ignition chamber, the liquid source such as DCE can be decomposed first, thereby significantly reducing the total amount of liquid source that needs to be decomposed by the ignition chamber, improving the decomposition rate of the liquid source, and reducing the possibility of bad spots in the prepared silicon dioxide film.

[0010] In a preferred technical solution, the liquid replenishing device further includes a first oxygen supply pipeline, and an outlet of the first oxygen supply pipeline is connected to an outlet of the liquid source input component.

[0011] In a preferred technical solution, the decomposition chamber includes an inner chamber and an outer chamber arranged outside the inner chamber, the outer chamber is connected to the inner chamber, the inner chamber is used to perform a primary decomposition of the liquid source, and the outer chamber is used to perform a secondary decomposition of the liquid source; the inlet of the decomposition chamber is connected to the inner chamber and isolated from the outer chamber; the outlet of the decomposition chamber is connected to the outer chamber and isolated from the inner chamber.

[0012] In a preferred technical solution, the decomposer further comprises a detection port connected to the decomposition chamber, and the detection port is used to connect a detection pipeline.

[0013] In a preferred technical solution, the outlet of the decomposition chamber is connected to the inlet of the ignition chamber through a first gas pipeline, and the outlet of the ignition chamber is connected to the gas inlet of the process chamber of the semiconductor process equipment through a second gas pipeline;

[0014] The first gas pipeline is provided with a first gas valve, a second oxygen supply pipeline and a hydrogen supply pipeline, and the second oxygen supply pipeline and the hydrogen supply pipeline are both connected between the first gas valve and the outlet of the first gas pipeline;

[0015] The fluid replenishing device also includes a third gas pipeline, which is provided with a fifth gas valve; the inlet of the third gas pipeline is connected to the first gas pipeline and is located between the first gas valve and the inlet of the first gas pipeline; the outlet of the third gas pipeline is connected to the second gas pipeline.

[0016] In a preferred technical solution, the liquid source input component includes:

[0017] A fluid refilling bottle, used to contain a fluid source for refilling;

[0018] A liquid source output pipeline, the inlet of which extends into the liquid infusion bottle, and the outlet of which is the outlet of the liquid source input component;

[0019] a liquid source input pipeline, the outlet of which extends into the liquid infusion bottle; and

[0020] The purge gas supply pipeline is connected to the liquid source output pipeline and is used to purge gas to the liquid source output pipeline. The purge gas supply pipeline is provided with a purge gas valve.

[0021] In a preferred technical solution, the liquid source output pipeline is provided with a second gas valve, and the second gas valve is located between the outlet of the liquid source output pipeline and the purge gas supply pipeline.

[0022] In a preferred technical solution, the liquid source input component further includes:

[0023] An air intake filter is arranged in the liquid source input pipeline; and

[0024] The air outlet filter is arranged on the liquid source output pipeline and is located between the inlet of the liquid source output pipeline and the outlet of the purge gas supply pipeline.

[0025] In a preferred technical solution, the liquid source input pipeline is connected to a carrier gas supply pipeline, and the carrier gas supply pipeline is provided with a carrier gas valve;

[0026] The liquid replenishing device also includes a control valve group, which has an air inlet and an air outlet; the air inlet is connected to the liquid source input pipeline and is located between the carrier gas valve and the outlet of the carrier gas supply pipeline; the air outlet is connected to the liquid source output pipeline and is located between the outlet of the purge gas supply pipeline and the air outlet filter.

[0027] The second object of the present invention is to provide a semiconductor process equipment to solve the technical problem of incomplete decomposition of the liquid source in the liquid replenishing device before entering the process chamber.

[0028] The semiconductor process equipment provided by the present invention comprises an ignition chamber, a process chamber, an exhaust gas exhaust pipeline and any one of the above-mentioned liquid replenishing devices, wherein the inlet of the ignition chamber is connected to the outlet of the decomposition chamber, the gas inlet of the process chamber is connected to the outlet of the ignition chamber and the decomposer, and the gas outlet of the process chamber is connected to the inlet of the exhaust gas exhaust pipeline.

[0029] By arranging the above-mentioned liquid replenishing device in the semiconductor process equipment, accordingly, the semiconductor process equipment has all the advantages of the above-mentioned liquid replenishing device, which will not be described one by one here.

[0030] In a preferred technical solution, the exhaust gas emission pipeline is provided with a sixth gas valve, and the sixth gas valve is located near the inlet of the exhaust gas emission pipeline;

[0031] The second gas pipeline is provided with a third gas valve and a fourth gas valve, the third gas valve is located between the inlet of the second gas pipeline and the outlet of the third gas pipeline, and the fourth gas valve is located between the outlet of the third gas pipeline and the outlet of the second gas pipeline;

[0032] The semiconductor process equipment further includes a fourth gas pipeline; the inlet of the fourth gas pipeline is connected to the second gas pipeline and is located between the third gas valve and the fourth gas valve; the outlet of the fourth gas pipeline is connected to the portion of the tail gas exhaust pipeline close to the sixth gas valve and is located between the sixth gas valve and the outlet of the tail gas exhaust pipeline;

[0033] The fourth gas pipeline is provided with a seventh gas valve and an eighth gas valve, the seventh gas valve is located near the inlet of the fourth gas pipeline, and the eighth gas valve is located near the outlet of the fourth gas pipeline.

[0034] In a preferred technical solution, the exhaust gas emission pipeline is also provided with a pressure control valve. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the background technology, the drawings required for use in the embodiments or the background technology description will be briefly introduced below. Obviously, the drawings in the following description are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0036] Figure 1 A schematic diagram of the structure of the fluid replenishment device mentioned in the related art

[0037] Figure 2 A schematic diagram of the structure of a semiconductor process equipment provided in Embodiment 1 of the present invention;

[0038] Figure 3 A simplified structural diagram of a semiconductor process equipment provided in Embodiment 1 of the present invention;

[0039] Figure 4 This is a schematic diagram of the structure of a decomposer of a fluid replenishment device provided in Example 1 of the present invention.

[0040] Description of reference numerals:

[0041] 1-DCE connecting pipe for plant services; 2-liquid source input valve; 3-tee; 4-DCE air inlet pipe; 5-liquid replenishment bottle; 6-DCE exhaust pipe; 7-carrier gas supply pipeline; 8-carrier gas valve; 9-control valve group; 10-valve body connecting pipe; 11-connecting pipe; 12-hydrogen supply pipeline; 13-second oxygen supply pipeline; 14-ignition chamber; 15-process chamber; 16-exhaust pipe; 17-pressure control valve; 18-plant service exhaust pipe; 19-intake filter; 20-exhaust filter; 21-filter connecting pipe; 22-valve group outlet pipe; 23-purge gas Supply pipeline; 24-first oxygen supply pipeline; 25-decomposer; 251-air inlet; 252-inner cavity; 253-cavity connection port; 254-outer cavity; 255-detection port; 256-exhaust port; 26-first gas pipeline; 27-third gas pipeline; 28-second gas pipeline; 29-fourth gas pipeline; 30-rear-end transition pipe; 31-purge gas valve; 32-second gas valve; 33-first gas valve; 34-fifth gas valve; 35-third gas valve; 36-fourth gas valve; 37-seventh gas valve; 38-eighth gas valve; 39-sixth gas valve. DETAILED DESCRIPTION

[0042] In the related art, the fluid replenishment device is as follows Figure 1 The device includes a plant service DCE connecting pipe 1, a liquid source input valve 2, a DCE air inlet pipe 4, a liquid replenishing bottle 5, a DCE exhaust pipe 6, a carrier gas supply pipeline 7, a carrier gas valve 8, a control valve group 9, a valve body connecting pipe 10, a decomposition air inlet pipe 11, a hydrogen air inlet pipe 12, an oxygen air inlet pipe 13, an ignition chamber 14, a process chamber 15, an exhaust pipe 16, a control pressure valve 17, and a plant service exhaust pipe 18.

[0043] The refilling device can be divided into a DCE automatic refilling device and a DCE manual refilling device. The DCE automatic refilling device refills the DCE liquid to the refilling bottle 5 of the equipment through the factory DCE connecting pipe 1. The DCE manual refilling device refills the DCE liquid by replacing the refilling bottle 5 with a new one.

[0044] The DCE automatic liquid replenishment device replenishes DCE to the liquid replenishment bottle 5 through the plant DCE connecting pipe 1, the liquid source input valve 2, the three-way 3 and the DCE air inlet pipe 4. The nitrogen in the carrier gas supply pipeline 7 of the equipment carries the DCE in the liquid replenishment bottle 5 through the carrier gas valve 8, the control valve group 9, the valve body connecting pipe 10, the three-way 3 and the liquid source input pipeline through the DCE exhaust pipe 6, the DCE control valve group 9, and the connecting pipe 11 to the high-temperature ignition chamber 14. At the same time, the hydrogen in the hydrogen inlet pipe 12 and the oxygen in the oxygen inlet pipe 13 enter the high-temperature ignition chamber 14 and burn to generate high-temperature water vapor. DCE and oxygen generate hydrogen chloride and carbon dioxide in the high-temperature ignition chamber 14. All gases in the ignition chamber 14 enter the process chamber 15 to achieve the cleaning of the process chamber 15 or react with the silicon wafer, and the exhaust gas generated is discharged through the exhaust pipe 16, the control pressure valve 17 and the plant exhaust pipe 18.

[0045] In the related art, client construction, replacement of the refill bottle 5, and disassembly of the DCE pipeline will all lead to contamination of the DCE air inlet pipe 4 and the DCE exhaust pipe 6. Moreover, since the DCE enters the high-temperature ignition chamber for a short time and cannot be fully mixed with oxygen, there is also a defect that DCE cannot be completely decomposed into hydrogen chloride, which affects the subsequent process. In addition, semiconductor process equipment uses hydrogen chloride gas to clean the chamber, but lacks cleaning of the exhaust pipeline. The residual exhaust gas in the exhaust pipeline causes the equipment to have the risk of exhaust gas backflow into the process chamber 15 or corroding the pressure control valve 17.

[0046] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0047] Embodiment 1:

[0048] Figure 2 A schematic diagram of the structure of a semiconductor process equipment provided in Embodiment 1 of the present invention; Figure 3 A simplified structural diagram of a semiconductor process equipment provided in Embodiment 1 of the present invention; Figure 2 and Figure 3 As shown, the liquid replenishing device provided in the first embodiment of the present invention is applied to semiconductor process equipment, the semiconductor process equipment includes an ignition chamber 14 and a process chamber 15, and the liquid replenishing device includes:

[0049] A liquid source input component and a decomposer 25 , wherein the decomposer 25 has a decomposition chamber, the decomposition chamber is used to decompose the liquid source, the inlet of the decomposition chamber is connected to the outlet of the liquid source input component, the outlet of the decomposition chamber is used to connect to the inlet of the ignition chamber 14 , and the outlet of the ignition chamber 14 is connected to the gas inlet of the process chamber 15 .

[0050] In this embodiment, the decomposed liquid source may be DCE.

[0051] By setting a decomposition chamber upstream of the ignition chamber 14, the liquid source can be decomposed first, thereby significantly reducing the total amount of liquid source that needs to be decomposed by the ignition chamber 14, improving the decomposition rate of the liquid source, and reducing the possibility of bad spots in the prepared silicon dioxide film.

[0052] like Figure 2 and Figure 3 As shown, preferably, the liquid infusion device further comprises a first oxygen supply pipeline 24, and the outlet of the first oxygen supply pipeline 24 is connected to the outlet of the liquid source input component.

[0053] By providing a first oxygen supply line 24 to supply sufficient oxygen to the decomposer 25, the DCE entering the decomposer 25 can be more thoroughly decomposed without completely utilizing the ignition chamber 14 for decomposition, thereby increasing the decomposition rate of DCE and reducing the possibility of bad spots in the prepared silicon dioxide film.

[0054] Figure 4 Schematic diagram of the structure of the decomposer in the liquid replenishing device provided in the first embodiment of the present invention; Figure 4 As shown, preferably, the decomposition chamber includes an inner chamber 252 and an outer chamber 254 arranged outside the inner chamber 252, the outer chamber 254 is connected to the inner chamber 252, the inner chamber 252 is used to perform a primary decomposition of the liquid source, and the outer chamber 254 is used to perform a secondary decomposition of the liquid source; the inlet of the decomposition chamber is connected to the inner chamber 252 and isolated from the outer chamber 254; the outlet of the decomposition chamber is connected to the outer chamber 254 and isolated from the inner chamber 252.

[0055] Among them, the inner cavity 252 is provided with an air inlet 251 as the entrance of the decomposition chamber, and the inner cavity 252 serves as the chamber for the first full decomposition of DCE. The inner cavity 252 and the outer cavity 254 are connected through the cavity connection port 253, and the outer cavity 254 can be used as the chamber for the second full decomposition of DCE. The exhaust port 256 of the outer cavity 254 serves as the outlet of the decomposition chamber. A high-temperature environment for realizing the decomposition of DCE can be formed in both the inner cavity 252 and the outer cavity 254. DCE and oxygen enter the inner cavity 252 at the same time, and the function of the inner cavity 252 is to fully mix oxygen and DCE and decompose them quickly. The decomposed gas enters the outer cavity 254 through the cavity connection port 253, and even if there is DCE that has not been completely decomposed, it can be decomposed again.

[0056] Through the interconnected inner cavity 252 and outer cavity 254, DCE is decomposed twice in the decomposer 25, thereby improving the decomposition efficiency, thereby reducing the possibility of undecomposed liquid source being input into the process chamber 15, and improving the manufacturing quality of the silicon dioxide film.

[0057] like Figure 4As shown, preferably, the decomposer further comprises a detection port 255 connected to the decomposition chamber, and the detection port 255 is used to connect a detection pipeline.

[0058] The detection port 255 is connected to the outer cavity 254. The detection pipeline includes a DCE detector.

[0059] By providing the detection port 255 for connecting the detection pipeline, it is possible to detect in the detection pipeline whether the DCE is completely decomposed, so as to facilitate controlling the ignition chamber 14 to continue to decompose the DCE.

[0060] like Figure 2 and Figure 3 As shown, preferably, the outlet of the decomposition chamber is connected to the inlet of the ignition chamber 14 through the first gas pipeline 26, and the outlet of the ignition chamber 14 is connected to the gas inlet of the process chamber 15 of the semiconductor process equipment through the second gas pipeline 28; the first gas pipeline 26 is provided with a first gas valve 33, a second oxygen supply pipeline 13 and a hydrogen supply pipeline 12, and the second oxygen supply pipeline 13 and the hydrogen supply pipeline 12 are both connected between the first gas valve 33 and the outlet of the first gas pipeline 26;

[0061] The fluid replenishing device also includes a third gas pipeline 27, which is provided with a fifth gas valve 34; the inlet of the third gas pipeline 27 is connected to the first gas pipeline 26 and is located between the first gas valve 33 and the inlet of the first gas pipeline 26; the outlet of the third gas pipeline 27 is connected to the second gas pipeline 28.

[0062] It should be noted that, in the present application, the expression "A is located between B and C" or "A is connected between B and C" does not limit A to being located on the straight line connecting the two components B and C, but only indicates the relative positions of the three in the pipeline connection relationship.

[0063] The second oxygen supply pipeline 13 and the hydrogen supply pipeline 12 are respectively installed on the first gas pipeline 26 through the tee 3, and the inlet of the second gas pipeline 28 is also installed on the first gas pipeline 26 through the tee 3. The first gas pipeline 26 is used to transport the gas products decomposed by the decomposer 25 to the inlet of the ignition chamber 14. By providing a third gas pipeline 27 with a fifth gas valve 34 to be connected to the second gas pipeline 28, and providing a first gas valve 33 on the first pipeline, when the decomposer 25 can completely decompose DCE, the fifth gas valve 34 can be opened and the first gas valve 33 can be closed, so as to directly use the third gas pipeline 27 to transport the decomposition products of DCE to the process chamber 15. If the detection pipeline connected to the detection port 255 detects that the DCE has not been completely decomposed, the first gas valve 33 can be opened and the fifth gas valve 34 can be closed to connect the outlet of the decomposer 25 to the entrance of the ignition chamber 14, and the ignition chamber 14 can be used to perform secondary decomposition on the DCE that has not been completely decomposed, thereby ensuring that the DCE can be completely decomposed before entering the process chamber 15.

[0064] like Figure 2 and Figure 3 As shown, the liquid source input assembly includes a liquid infusion bottle 5, a liquid source input pipeline, a liquid source output pipeline, and a purge gas supply pipeline 23. The liquid infusion bottle 5 is used to contain the liquid source; the outlet of the liquid source input pipeline extends into the liquid infusion bottle 5; the inlet of the liquid source output pipeline extends into the liquid infusion bottle 5; the purge gas supply pipeline 23 is connected to the liquid source output pipeline, and is used to purge gas to the liquid source output pipeline. The purge gas supply pipeline 23 is provided with a purge gas valve 31.

[0065] In this embodiment, the liquid source input pipeline includes a plant service DCE connecting pipe 1 and a DCE air inlet pipe 4. A liquid source input valve 2 is provided on the plant service DCE connecting pipe 1, and the outlet of the plant service DCE connecting pipe 1 is connected to the inlet of the DCE air inlet pipe 4. When the liquid source input valve 2 is opened, DCE can be allowed to enter the liquid infusion bottle 5 through the plant service DCE connecting pipe 1 and the DCE air inlet pipe 4.

[0066] In this embodiment, the liquid source output pipeline includes a DCE exhaust pipe 6, a filter connecting pipe 21, a valve group outlet pipe 22 and a connecting pipe 11 which are connected in sequence.

[0067] The liquid is introduced into the infusion bottle 5, and the outlet of the purge gas supply pipeline 23 is connected to the valve group outlet pipe 22 and the connecting pipe 11 through the tee 3.

[0068] Specifically, in this embodiment, the purge gas may be nitrogen, which has relatively stable chemical properties, is widely available, and is inexpensive. In another implementation, the purge gas may also be a rare gas such as helium or argon.

[0069] By setting a purge gas supply pipeline 23 connected to the liquid source output pipeline, when replacing the liquid replenishing bottle 5, the purge gas supply pipeline 23 can be used to purge the liquid source output pipeline, so that the liquid source output pipeline always maintains a state of outward airflow, thereby avoiding contamination of the liquid source output pipeline.

[0070] like Figure 2 and Figure 3 As shown, preferably, the liquid source output pipeline is provided with a second gas valve 32 , and the second gas valve 32 is located between the outlet of the liquid source output pipeline and the purge gas supply pipeline 23 .

[0071] Specifically, in this embodiment, the second gas valve 32 is disposed on the connecting pipe 11. When the second gas valve 32 is closed, the nitrogen supplied by the purge gas supply pipeline 23 will not flow along the connecting pipe 11 to the components connected to the downstream side of the connecting pipe 11, but can only flow to the side of the DCE exhaust pipe 6, thereby achieving the purge of the DCE exhaust pipe 6 to prevent it from being contaminated.

[0072] By setting the second air valve 32, the second air valve 32 can be used to cut off the flow of air in a certain direction in the liquid source output pipeline, that is, it can only flow in the direction of the fluid infusion bottle 5, so air will not enter the liquid source output pipeline, thereby preventing the liquid source output pipeline from being contaminated when the fluid infusion bottle 5 is removed and replaced.

[0073] like Figure 2 and Figure 3 As shown, preferably, the liquid source input assembly further includes an air inlet filter 19 and an air outlet filter 20, wherein the air inlet filter 19 is arranged in the liquid source input pipeline;

[0074] The air outlet filter 20 is disposed in the liquid source output pipeline and is located between the inlet of the liquid source output pipeline and the outlet of the purge gas supply pipeline 23 .

[0075] Specifically, the air intake filter 19 is arranged on the DCE air intake pipe 4 , and the air outlet filter 20 is connected to the DCE exhaust pipe 6 and the filter connecting pipe 21 .

[0076] By providing an air inlet filter 19 and an air outlet filter 20, not only can the pollutants introduced into the DCE through the liquid source input pipeline be filtered out, thus avoiding the risk of contamination at the plant side, but also the risk of contamination of the liquid source input pipeline, the liquid source output pipeline or the liquid replenishment bottle 5 can be avoided.

[0077] like Figure 2 and Figure 3 As shown, preferably, the liquid source input pipeline is connected to a carrier gas supply pipeline 7, and the carrier gas supply pipeline 7 is provided with a carrier gas valve 8;

[0078] The liquid replenishing device also includes a control valve group 9, which has an air inlet and an air outlet; the air inlet is connected to the liquid source input pipeline and is located between the outlet of the carrier gas valve 8 and the carrier gas supply pipeline 7; the air outlet is connected to the liquid source output pipeline and is located between the outlet of the purge gas supply pipeline 23 and the air outlet filter 20.

[0079] In this embodiment, nitrogen can be used as the carrier gas. In another implementation, rare gases such as helium and argon can also be used.

[0080] The outlet of the carrier gas supply pipeline 7 is connected to one end of the air inlet of the control valve group 9, and the other end of the air inlet of the control valve group 9 is connected to the inlet of the valve body connecting pipe 10. One end of the filter connecting pipe 21 is connected to one end of the air outlet of the control valve group 9, and the other end of the air outlet of the control valve group 9 is connected to the valve group outlet pipe 22.

[0081] By setting the control valve group 9 to control the carrier gas supply pipeline 7 and the liquid source output pipeline, not only can the liquid gas supply pipeline 7 and the liquid source output pipeline be connected when the process is carried out normally, so that the DCE can enter the decomposer 25. Moreover, when it is necessary to replace the liquid source replenishing bottle 5 or disassemble the DCE air inlet pipe 4 and the DCE exhaust pipe 6, the liquid source output pipeline can also be connected, and the liquid source output pipeline can be purged by the purge gas supply pipeline 23, and the carrier gas supply pipeline 7 can be connected, and the DCE air inlet pipe 4 can be purged by the carrier gas, so as to prevent the liquid source output pipeline and the liquid source input pipeline from being contaminated. In addition, when the control valve group 9 disconnects the liquid source output pipeline, the nitrogen in the purge gas supply pipeline 23 can flow downstream to purge the decomposer 25 and the process chamber 15.

[0082] Embodiment 2:

[0083] like Figure 2 and Figure 3 As shown, embodiment 2 also provides a semiconductor process equipment, including an ignition chamber 14, a process chamber 15, an exhaust gas pipeline and the liquid replenishing device of embodiment 1, the inlet of the ignition chamber is connected to the outlet of the decomposition chamber, the gas inlet of the process chamber 15 is connected to the outlet of the ignition chamber 14 and the decomposer 25, and the gas outlet of the process chamber 15 is connected to the inlet of the exhaust gas pipeline.

[0084] By arranging the above-mentioned liquid replenishing device in the semiconductor process equipment, accordingly, the semiconductor process equipment has all the advantages of the above-mentioned liquid replenishing device, which will not be described one by one here.

[0085] like Figure 2 and Figure 3 As shown, preferably, the exhaust gas emission pipeline is provided with a sixth gas valve 39, and the sixth gas valve 39 is located near the inlet of the exhaust gas emission pipeline;

[0086] The outlet of the ignition chamber 14 is connected to the inlet of the process chamber 15 through the second gas pipeline 28. The second gas pipeline 28 is provided with a third gas valve 35 and a fourth gas valve 36. The third gas valve 35 is located between the inlet of the second gas pipeline 28 and the outlet of the third gas pipeline 27. The fourth gas valve 36 is located between the outlet of the third gas pipeline 27 and the outlet of the second gas pipeline 28.

[0087] The liquid replenishing device further includes a fourth gas pipeline 29; the inlet of the fourth gas pipeline 29 is connected to the second gas pipeline 28 and is located between the third gas valve 35 and the fourth gas valve 36; the outlet of the fourth gas pipeline 29 is connected to the exhaust gas pipeline and is located between the sixth gas valve 39 and the outlet of the exhaust gas pipeline;

[0088] The fourth gas pipeline 29 is provided with a seventh gas valve 37 and an eighth gas valve 38 . The seventh gas valve 37 is located near the inlet of the fourth gas pipeline 29 , and the eighth gas valve 38 is located near the outlet of the fourth gas pipeline 29 .

[0089] The connection between the third gas pipeline 27 and the fourth gas pipeline 29 and the second gas pipeline 28 can be achieved through a four-way connection, or through two three-way connections 3 at different positions of the second gas pipeline 28 .

[0090] In this embodiment, the function of the second gas pipeline 28 is: when the third gas valve 35 and the fourth gas valve 36 are in the open state, the gas discharged from the ignition chamber 14 and the decomposer 25 or the gas discharged from the ignition chamber 14 enters the process chamber 15 through the second gas pipeline 28 for process reaction; or when the third gas valve 35 is closed, the fourth gas valve 36 is opened, the fifth gas valve 34 is opened, and the first gas valve 33 is closed, the gas in the decomposer 25 can be supplied to enter the process chamber 15.

[0091] In this embodiment, the function of the third gas pipeline 27 is: when the third gas valve 35 is closed, the fourth gas valve 36 is opened, the fifth gas valve 34 is opened, and the first gas valve 33 is closed, the exhaust gas of the decomposer 25 can be delivered to the process chamber; or when the third gas valve 35 is closed, the fourth gas valve 36 is closed, the fifth gas valve 34 is opened, the first gas valve 33 is closed, the seventh gas valve 37 is opened, the eighth gas valve 38, and the sixth gas valve 39 are opened, the exhaust gas of the decomposer 25 enters the exhaust gas emission pipeline through the third gas pipeline 27 and the fourth gas pipeline 29 to clean the exhaust gas emission pipeline.

[0092] In this embodiment, the function of the fourth gas pipeline 29 is: when the third gas valve 35 is closed, the fourth gas valve 36 is closed, the fifth gas valve 34 is opened, the first gas valve 33 is closed, the seventh gas valve 37 is opened, the eighth gas valve 38, and the sixth gas valve 39 are opened, the exhaust gas from the decomposer 25 enters the exhaust gas emission pipeline through the third gas pipeline 27 and the fourth gas pipeline 29 to clean the exhaust gas emission pipeline.

[0093] Specifically, in this embodiment, the exhaust gas emission pipeline includes a rear transition pipe 30, an exhaust pipe 16, and a factory exhaust pipe 18 which are sequentially connected. One end of the rear transition pipe 30 is also connected to the gas outlet of the process chamber 15, and the outlet of the fourth gas pipeline 29 is connected to the rear transition pipe 30 through a tee 3.

[0094] In this embodiment, the function of the rear transition pipe 30 is that when the process is in progress, the sixth gas valve 39 is opened to discharge the gas in the process chamber 15. When the process is not in progress, the second gas pipeline 28 can input gas to clean the tail gas discharge pipeline.

[0095] When the process is being carried out, the seventh gas valve 37 and the eighth gas valve 38 are in a closed state, and no gas flows in the fourth gas pipeline 29. The third gas valve 35 and the fourth gas valve 36 are in an open state, and the gas discharged from the ignition chamber 14 and the decomposer 25 can enter the process chamber 15 through the third gas valve 35, the fourth gas valve 36 and the second gas pipeline 28 for process reaction. When the process is not being carried out, the fourth gas valve 36 and the sixth gas valve 39 are in a closed state to prevent the gas from entering the process chamber 15. The seventh gas valve 37 and the eighth gas valve 38 are in a conducting state, and the gas discharged from the outlet of the ignition chamber 14 or the gas discharged from the ignition chamber 14 and the decomposer 25 can be transported to the exhaust gas emission pipeline through the fourth gas pipeline 29, and discharged through the rear-end transition pipe 30, the exhaust pipe 16 and the factory exhaust pipe 18 in sequence to achieve the cleaning of the exhaust gas emission pipeline.

[0096] like Figure 2 and Figure 3 As shown, preferably, the exhaust gas pipeline is provided with a pressure control valve 17 .

[0097] The pressure control valve 17 is provided to control the pressure of the exhaust gas discharge pipeline to prevent the pressure from exceeding the standard during exhaust gas discharge.

[0098] The operating principle of this embodiment is:

[0099] When the oxidation process proceeds normally, the carrier gas valve 8 is opened, the liquid source input valve 2 is closed, and the nitrogen in the carrier gas supply pipeline 7 passes through the air inlet of the control valve group 9 and enters the liquid replenishment bottle 5 through the DCE air inlet pipe 4. Due to the increase in the volume of nitrogen, the DCE in the liquid replenishment bottle 5 is sequentially input into the decomposer 25 through the DCE exhaust pipe 6, the filter connecting pipe 21, the air outlet of the control valve group 9, the valve group outlet pipe 22 and the connecting pipe 11.

[0100] If it is necessary to replenish the liquid in the liquid infusion bottle 5, the air inlet of the control valve group 9 is closed, the liquid source input valve 2 is opened, and DCE is replenished into the liquid infusion bottle 5 through the factory DCE connecting pipe 1 and the DCE air inlet pipe 4.

[0101] Since the air inlet filter 19 and the air outlet filter 20 are provided, as long as gas and liquid flow through them, they will filter the flowing gas and liquid, avoiding the risk of contamination caused by nitrogen or DCE provided by the plant service end, and also avoiding the risk of contamination caused by the DCE air inlet pipe 4, DCE exhaust pipe 6 or liquid replenishment bottle 5.

[0102] When it is necessary to replace the rehydration bottle 5 or disassemble the DCE air inlet pipe 4 and the DCE exhaust pipe 6, the carrier gas valve 8 and the purge gas valve 31 are both opened, and the first gas valve 33 is closed. Nitrogen can be input from the purge gas supply pipeline 23 and the carrier gas supply pipeline 7 to purge the valve group outlet pipe 22, the control valve group 9, the filter connecting pipe 21, the air outlet filter 20, the DCE exhaust pipe 6, the valve body connecting pipe 10, the air inlet filter 19 and the DCE air inlet pipe 4 to prevent contamination due to the removal of the rehydration bottle 5.

[0103] In addition, the purge gas supply pipeline 23 can purge the decomposer 25 in addition to the side of the infusion bottle 5. Specifically, the gas outlet of the control valve group 9 is closed, the purge gas valve 31 and the first gas valve 33 are opened, and the gas in the purge gas supply pipeline 23 can enter the decomposer 25 through the connecting pipe 11 to purge the decomposer 25.

[0104] After DCE enters the decomposer 25, when DCE can be completely decomposed into hydrogen chloride and carbon dioxide, that is, when the detection pipeline detects no residual DCE from the position close to the outlet of the decomposer 25, the fifth gas valve 34 is opened, the third gas pipeline 27 is turned on, the first gas valve 33 is closed, the first gas pipeline 26 is disconnected, and the fourth gas valve 36 is opened. The decomposer 25 decomposes the hydrogen chloride and carbon dioxide into which DCE is decomposed into and enters the process chamber 15 through the third gas pipeline 27 and the second gas pipeline 28. At the same time, the hydrogen in the hydrogen supply pipeline 12 and the oxygen in the second oxygen supply pipeline 13 enter the high-temperature ignition chamber 14 and burn to generate high-temperature water vapor, which enters the process chamber 15 through the third gas valve 35, the second gas pipeline 28 and the fourth gas valve 36, so as to realize the cleaning of the process chamber 15 or react with the silicon wafer, and the exhaust gas generated is discharged through the sixth gas valve 39, the rear transition pipe 30, the exhaust pipe 16, the pressure control valve 17 and the factory exhaust pipe 18. When the process is not being carried out, the third gas valve 35, the fourth gas valve 36 and the sixth gas valve 39 are closed, the seventh gas valve 37 and the eighth gas valve 38 are opened, and the hydrogen chloride discharged from the DCE decomposer 25 passes through the fourth gas pipeline 29 and the rear-end transition pipe 30 to clean the exhaust gas emission pipeline at the rear end of the process chamber 15, and is discharged through the rear-end transition pipe 30, the exhaust pipe 16 and the factory exhaust pipe 18 in sequence.

[0105] When the detector connected to the detection port 255 of the decomposer 25 gives an alarm, it indicates that there is residual DCE. At this time, the first gas valve 33 is opened, the first gas pipeline 26 is fully connected, the fifth gas valve 34 is closed, and the third gas pipeline 27 is closed. The gas discharged from the decomposer 25 enters the high-temperature ignition chamber 14 through the first gas pipeline 26 and decomposes again. At the same time, the hydrogen in the hydrogen supply pipeline 12 and the oxygen in the second oxygen supply pipeline 13 enter the high-temperature ignition chamber 14 and burn to generate high-temperature water vapor. Then, it enters the process chamber 15 through the third gas valve 35, the second gas pipeline 28 and the fourth gas valve 36, which can realize the cleaning of the process chamber 15 or react with the silicon wafer. The exhaust gas generated is discharged through the sixth gas valve 39, the rear transition pipe 30, the exhaust pipe 16, the pressure control valve 17 and the factory exhaust pipe 18. When the process is not being carried out, the fourth gas valve 36 and the sixth gas valve 39 are closed, the third gas valve 35, the seventh gas valve 37 and the eighth gas valve 38 are opened, and the hydrogen chloride discharged from the ignition chamber 14 is cleaned through the fourth gas pipeline 29 and the rear-end transition pipe 30 to achieve the cleaning of the rear-end exhaust emission pipeline, and is discharged through the rear-end transition pipe 30, the exhaust pipe 16 and the plant exhaust pipe 18 in sequence.

[0106] It should be noted that the present application does not limit the valve body type of 35, 36, and 37. For example, in addition to being a single valve body, 35, 36, and 37 can also be an integrated valve body.

[0107] In summary, the liquid replenishing device can not only clean the process chamber 15 , but also directly clean the exhaust gas pipeline without passing through the process chamber 15 .

[0108] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

[0109] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprises a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0110] In the above embodiments, the descriptions of directions such as “upper” and “lower” are all based on the drawings.

[0111] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention.

[0112] Thus, the present invention will not be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A fluid replenishing device, characterized in that: The invention is applied to semiconductor process equipment, the semiconductor process equipment comprises an ignition chamber (14) and a process chamber (15), the liquid replenishing device comprises a liquid source input component and a decomposer (25), the decomposer (25) has a decomposition chamber, the decomposition chamber is used to decompose the liquid source, the inlet of the decomposition chamber is connected to the outlet of the liquid source input component, the outlet of the decomposition chamber is used to connect to the inlet of the ignition chamber (14), and the outlet of the ignition chamber (14) is connected to the gas inlet of the process chamber (15) of the semiconductor process equipment.

2. The fluid replenishing device according to claim 1, characterized in that: The liquid replenishing device also includes a first oxygen supply pipeline (24), the outlet of the first oxygen supply pipeline (24) is connected to the outlet of the liquid source input component.

3. The fluid replenishing device according to claim 1, characterized in that: The decomposition chamber comprises an inner chamber (252) and an outer chamber (254) arranged outside the inner chamber (252); the outer chamber (254) is connected to the inner chamber (252); the inner chamber (252) is used to perform a primary decomposition of the liquid source; the outer chamber (254) is used to perform a secondary decomposition of the liquid source; the inlet of the decomposition chamber is connected to the inner chamber (252) and isolated from the outer chamber (254); the outlet of the decomposition chamber is connected to the outer chamber (254) and isolated from the inner chamber (252).

4. The fluid replenishing device according to claim 1, characterized in that: The decomposer (25) further comprises a detection port (255) communicated with the decomposition chamber, and the detection port (255) is used to connect a detection pipeline.

5. The fluid replenishing device according to claim 4, characterized in that: The outlet of the decomposition chamber is connected to the inlet of the ignition chamber (14) through a first gas pipeline (26), and the outlet of the ignition chamber (14) is connected to the gas inlet of the process chamber (15) of the semiconductor process equipment through a second gas pipeline (28); The first gas pipeline (26) is provided with a first gas valve (33), a second oxygen supply pipeline (13) and a hydrogen supply pipeline (12); the second oxygen supply pipeline (13) and the hydrogen supply pipeline (12) are both connected between the first gas valve (33) and the outlet of the first gas pipeline (26); The fluid replenishing device further comprises a third gas pipeline (27), and the third gas pipeline (27) is provided with a fifth gas valve (34); the inlet of the third gas pipeline (27) is connected to the first gas pipeline (26), and is located between the first gas valve (33) and the inlet of the first gas pipeline (26); the outlet of the third gas pipeline (27) is connected to the second gas pipeline (28).

6. The fluid infusion device according to any one of claims 1 to 5, characterized in that: The liquid source input component comprises: A fluid replenishment bottle (5), used for containing a fluid source for fluid replenishment; a liquid source output pipeline, the inlet of which extends into the liquid infusion bottle (5), and the outlet of which is the outlet of the liquid source input component; a liquid source input pipeline, the outlet of which extends into the liquid infusion bottle (5); and The purge gas supply pipeline (23) is connected to the liquid source output pipeline and is used to purge gas to the liquid source output pipeline. The purge gas supply pipeline (23) is provided with a purge gas valve (31).

7. The fluid replenishing device according to claim 6, characterized in that: The liquid source output pipeline is provided with a second gas valve (32), and the second gas valve (32) is located between the outlet of the liquid source output pipeline and the purge gas supply pipeline (23).

8. The fluid replenishing device according to claim 6, characterized in that: The liquid source input component also includes: an air intake filter (19), arranged in the liquid source input pipeline; and An air outlet filter (20) is arranged on the liquid source output pipeline and is located between the inlet of the liquid source output pipeline and the outlet of the purge gas supply pipeline (23).

9. The fluid replenishing device according to claim 8, characterized in that: The liquid source input pipeline is connected to a carrier gas supply pipeline (7), and the carrier gas supply pipeline (7) is provided with a carrier gas valve (8); The liquid replenishing device also includes a control valve group (9), and the control valve group (9) has an air inlet and an air outlet; the air inlet is connected to the liquid source input pipeline and is located between the carrier gas valve (8) and the outlet of the carrier gas supply pipeline (7); the air outlet is connected to the liquid source output pipeline and is located between the outlet of the purge gas supply pipeline (23) and the air outlet filter (20).

10. A semiconductor process equipment, characterized in that: It comprises an ignition chamber (14), a process chamber (15), an exhaust gas pipeline and a liquid replenishing device according to any one of claims 1 to 9, wherein the inlet of the ignition chamber (14) is connected to the outlet of the decomposition chamber, the gas inlet of the process chamber (15) is connected to the outlet of the ignition chamber (14) and the decomposer (25), and the gas outlet of the process chamber (15) is connected to the inlet of the exhaust gas pipeline.

11. The semiconductor process equipment according to claim 10, characterized in that: The exhaust gas discharge pipeline is provided with a sixth gas valve (39), and the sixth gas valve (39) is located near the inlet of the exhaust gas discharge pipeline; The outlet of the ignition chamber (14) is connected to the inlet of the process chamber (15) through a second gas pipeline (28); the second gas pipeline (28) is provided with a third gas valve (35) and a fourth gas valve (36); the third gas valve (35) is located between the inlet of the second gas pipeline (28) and the outlet of the third gas pipeline (27); the fourth gas valve (36) is located between the outlet of the third gas pipeline (27) and the outlet of the second gas pipeline (28); The semiconductor process equipment further comprises a fourth gas pipeline (29); the inlet of the fourth gas pipeline (29) is connected to the second gas pipeline (28) and is located between the third gas valve (35) and the fourth gas valve (36); the outlet of the fourth gas pipeline (29) is connected to a portion of the tail gas discharge pipeline close to the sixth gas valve (39) and is located between the sixth gas valve (39) and the outlet of the tail gas discharge pipeline; The fourth gas pipeline (29) is provided with a seventh gas valve (37) and an eighth gas valve (38); the seventh gas valve (37) is located near the inlet of the fourth gas pipeline (29), and the eighth gas valve (38) is located near the outlet of the fourth gas pipeline (29).

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