Holding layer local removal method and holding layer local removal device

Abstract

The present invention addresses the problem of providing a method and a device for bringing a holding layer into contact with an element only in a region that is the same as the size of a second main surface of the element or that is further inward than the size of the second main surface of the element. Specifically, a partial removal method for a holding layer is provided in which a part of the holding layer (10) is removed from a substrate (20) on which a second main surface (1B) of an element is held by means of the holding layer (10). A holding layer removal step is performed in which a portion of the holding layer (10) is removed by irradiating laser light from the first main surface (1A) side of the element so that the entire range of arrangement of the holding layer (10) in the region of arrangement of the element becomes an irradiation range.

Description

Technical Field

[0001] The present invention relates to a method and apparatus for partially removing a holding layer for partially removing a holding layer on a substrate to which a semiconductor chip or other element is bonded and held. Background Art

[0002] Semiconductor chips have been miniaturized to reduce costs, and research has been conducted to mount LED chips, which are miniaturized semiconductor chips, at high speed and high precision. In particular, LEDs used in displays require that LED chips of 50 μm×50 μm or less, called micro LEDs, be mounted at high speed with a precision of several μm.

[0003] Patent document 1 describes the following: In a technology for transferring a semiconductor chip held on a substrate by a holding layer by laser stripping, the holding layer contacts the semiconductor chip only in a region that is equal to or inner than a surface of the semiconductor chip closest to the holding layer. Thus, the holding layer does not surround the side surfaces of the semiconductor chip, and the semiconductor chip does not tilt during laser stripping, thereby enabling transfer with high precision.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: WO2020 / 166301 Summary of the invention

[0007] Problems to be solved by the invention

[0008] However, the technology described in Patent Document 1 has the following problem: it is not described and is unclear how the holding layer contacts the semiconductor chip only in a region that is equal to or inside the surface closest to the semiconductor chip.

[0009] The present invention aims to solve the above-mentioned problems and discloses a method and apparatus for making a component such as a semiconductor chip contact a holding layer only in a region having the same size as the component or in a region inside the component.

[0010] Means for solving problems

[0011] In order to solve the above-mentioned problem, the present invention provides a method for partially removing a retaining layer, wherein a portion of the retaining layer is removed in a substrate having a second main surface on which an element is retained by means of the retaining layer, and the method is characterized in that the following retaining layer removal process is performed: a portion of the retaining layer is removed by irradiating a laser from the first main surface side of the element in such a manner that the entire configuration range of the retaining layer in the arrangement area of ​​the element becomes an irradiation range.

[0012] According to this structure, components such as semiconductor chips only contact the retaining layer in an area of ​​the same size as the component or in an area closer to the inside of the component. The retaining layer does not surround the side of the component, which can prevent the semiconductor chip from tilting during laser peeling and perform transfer with high precision.

[0013] In the method for locally removing the retaining layer, the size of the laser spot irradiated in the retaining layer removal step may at least include the entire area of ​​the first main surface of at least one of the elements and the retaining layer around the element, and the laser having the laser spot is relatively moved to irradiate the entire area of ​​the configuration range of the retaining layer in the arrangement area of ​​the element with the laser.

[0014] According to this structure, the holding layer around the component can be removed, and the holding layer can be reliably prevented from surrounding the side surface of the component. The component will not be tilted during laser lift-off during transfer, and transfer can be performed with high accuracy.

[0015] In the method for local removal of the retaining layer, the laser spot irradiated in the retaining layer removal process may be linear, and the laser spot is relatively moved in a direction perpendicular to the length direction of the linear laser spot, thereby irradiating the laser to the entire area of ​​the configuration range of the retaining layer in the arrangement area of ​​the element.

[0016] According to this structure, by laser irradiating the entire area of ​​the first main surface of the element and the retaining layer around the element, the retaining layer around the element can be removed, and the retaining layer can be reliably prevented from surrounding the side of the element. The semiconductor chip will not tilt during laser peeling, and transfer can be performed with high precision.

[0017] In order to solve the above-mentioned problem, the present invention provides a device for partially removing a holding layer, which removes a portion of the holding layer in a substrate on a second main surface of a component held by the holding layer, and is characterized in that the device for partially removing a holding layer comprises:

[0018] a laser irradiation unit that irradiates laser light;

[0019] a substrate holding portion that holds the substrate; and

[0020] A control unit performs the following control: while irradiating the laser from the first main surface side of the element from the laser irradiation unit, the laser is moved relative to the substrate holding unit so that the entire configuration range of the holding layer in the arrangement area of ​​the element becomes the laser irradiation range.

[0021] According to this structure, the element contacts the retaining layer only in an area of ​​the same size as the element or in an area inside the element, and the retaining layer does not surround the side of the element, which can prevent the semiconductor chip from tilting during laser peeling and perform transfer with high precision.

[0022] Effects of the Invention

[0023] The method or apparatus for partially removing a retaining layer of the present invention can make a component such as a semiconductor chip contact the retaining layer only in a region having the same size as the component or in a region inside the component. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a diagram for explaining the device for partially removing the retaining layer according to the first embodiment of the present invention.

[0025] Figure 2 It is a diagram for explaining the method of partially removing the retaining layer in Example 1 of the present invention.

[0026] Figure 3 This is a diagram for explaining a holding layer around a device in Example 1 of the present invention.

[0027] Figure 4 This is a diagram for explaining a previous topic.

[0028] Figure 5 It is a diagram for explaining the device for partially removing the retaining layer according to the second embodiment of the present invention.

[0029] Figure 6 It is a diagram for explaining the method of partially removing the retaining layer in Example 2 of the present invention. DETAILED DESCRIPTION

[0030] [Example 1]

[0031] Reference Figure 1 to Figure 4 Embodiment 1 of the present invention will be described. Figure 1 It is a diagram for explaining the device for partially removing the retaining layer according to the first embodiment of the present invention. Figure 2 The figures are for explaining the method for partially removing the retaining layer in Example 1 of the present invention, wherein (a) shows the substrate before laser irradiation, and (b) shows the substrate after laser irradiation. Figure 3 This is a diagram for explaining a holding layer around a device in Example 1 of the present invention. Figure 4 This is a diagram for explaining a previous topic.

[0032] (Partial Removal Device of Retaining Layer) The partial removal device of retaining layer 100 in Embodiment 1 includes a retaining layer removing unit 110. The retaining layer removing unit 110 performs the retaining layer removing step described later.

[0033] The details of the retaining layer removal portion 110 are shown in FIG. Figure 1 The holding layer removing unit 110 includes a laser irradiation unit 112 that irradiates the laser beam 111 , a substrate holding unit 114 that holds the substrate 20 and is movable in at least the X-axis direction and the Y-axis direction, and a control unit (not shown).

[0034] The laser irradiation unit 112 is a device for irradiating a laser 111 such as an excimer laser, and is fixedly disposed on the holding layer removal unit 110. In Example 1, the laser irradiation unit 112 irradiates the laser 111 having a wavelength of 266 nm in a substantially quadrilateral point shape. The irradiation position of the laser 111 in the X-axis direction and the Y-axis direction is controlled via the galvanometer mirror 115 and the fθ lens 116 whose angles are adjusted by the control unit, and selectively irradiates the holding layer 10 on the substrate 20 held by the substrate holding unit 114. The wavelength of the laser 111 in Example 1 is 266 nm, so the laser 111 irradiated to the first main surface 1A of the semiconductor chip 1 (element) is absorbed and blocked by GaN, and does not reach the holding layer that abuts against the semiconductor chip 1 and adheres to and holds the semiconductor chip 1. On the other hand, since the laser 111 is incident on the holding layer 20 where the semiconductor chip 1 is not arranged, the holding layer 10 in the incident area is removed as the gas is generated. As a result, a portion of the holding layer 10 on the substrate 20 is removed.

[0035] In Example 1, the laser irradiation unit 112 irradiates the substrate 20 with a laser spot 50 having a size that includes at least the entire area of ​​at least one semiconductor chip among the semiconductor chips 1 arranged in the X and Y directions and the exposed holding layer around the semiconductor chip.

[0036] The substrate holding part 114 is moved at least in the X-axis direction and the Y-axis direction by a moving mechanism (not shown). The control unit controls the moving mechanism to adjust the position of the substrate holding part 114, thereby adjusting the relative position of the semiconductor chip 1 held on the substrate.

[0037] The substrate holding part 114 has a flat surface on the upper surface and holds the substrate 20 in the holding layer removal step described later. A plurality of suction holes are provided on the upper surface of the substrate holding part 114 to hold the second main surface 22 (surface without holding layer) of the substrate by suction.

[0038] In addition, in the first embodiment, the substrate holding part 114 is moved in the X-axis direction and the Y-axis direction, but it is not necessarily limited to this and can be appropriately changed. For example, it can also be a method of moving only in either the X-axis direction or the Y-axis direction. In addition, the substrate holding part can also be a method of moving the laser without moving in any direction.

[0039] In the first embodiment, a substantially rectangular laser spot is irradiated, but the present invention is not necessarily limited to this and can be changed as appropriate. For example, a substantially circular or elliptical laser spot may be irradiated.

[0040] In the first embodiment, the wavelength of the laser light is set to 266 nm, but it is not necessarily limited to this and can be changed as appropriate. For example, it can be any other wavelength as long as it is a wavelength that does not transmit the semiconductor chip 1 .

[0041] (Partial Removal Method of Retaining Layer) The partial removal method of the retaining layer in Example 1 is described. Figure 2 As shown in (a), a holding layer 10 is provided over substantially the entire surface of the first main surface 21 of the substrate 20, and the second main surface 1B of the semiconductor chip 1 abuts against the surface of the holding layer 10 opposite to the substrate 20, and 7 semiconductor chips 1 are arranged in the X direction and 5 in the Y direction and are bonded and held. In Example 1, when viewed from the first main surface side of the substrate 20, the semiconductor chips arranged in the X direction are designated as a, b, c...g from the left, the semiconductor chips arranged in the Y direction are designated as 1, 2, 3, 4, 5, and the semiconductor chip on the upper left is designated as 1a.

[0042] The holding layer removal step is performed by irradiating the holding layer 10 with a laser beam 111 having a laser spot 50 from the first main surface 1A side of the semiconductor chip 1a. The size of the laser spot 50 includes the entire first main surface 1A of the semiconductor chip 1 and the holding layer 16a exposed in a quadrilateral ring shape around the semiconductor chip 1 (see Figure 3 ).

[0043] In the first embodiment, the laser is irradiated with a laser spot 50 of a size that includes at least the entire area of ​​the first main surface 1A of one semiconductor chip 1 and the retaining layer 16a exposed in a quadrilateral ring shape around the semiconductor chip 1, but the size is not limited to this and can be changed appropriately. For example, the laser can be irradiated with a laser spot of a size that includes the entire area of ​​the first main surface of a plurality of semiconductor chips 1 and the retaining layer around them. Here, the retaining layer around the semiconductor chip refers to the retaining layer in the range where the retaining layer will not surround the side of the semiconductor chip if it is removed.

[0044] The laser beam 111 is irradiated to the area centered on the semiconductor chip 1a with a laser spot size of 50, thereby Figure 3The exposed holding layer 16a around the semiconductor chip shown is removed by ablation as the gas is generated. The laser 111 irradiated to the entire area of ​​the first main surface 1A of the semiconductor chip 1a is shielded by the semiconductor chip 1a, and the laser 111 does not irradiate the holding layer on the second main surface 1B side of the semiconductor chip 1a, and ablation does not occur. However, a portion of the holding layer around the second main surface 1B side of the semiconductor chip 1a is locally ablated due to the angle, refraction, etc. of the laser 111, and is sometimes removed as the gas is generated.

[0045] Therefore, if Figure 2 As shown in (b), the holding layer to which the semiconductor chip 1 (e.g., semiconductor chips 1a to 1g) is bonded becomes an area having the same size as the second main surface of the semiconductor chip 1 or an area having a smaller size than the second main surface of the semiconductor chip 1. That is, the holding layer does not surround the side surface of the semiconductor chip 1. Therefore, as described later, when transferring the semiconductor chip 1, it is possible to transfer it with high precision without tilting.

[0046] In the past, Figure 4 As shown in (a), if there is a surrounding holding layer 19 in which the holding layer 10 is surrounded on the side of the semiconductor chip 1, when laser is irradiated from the second main surface 1B side of the semiconductor chip 1 and transferred by laser stripping, as shown in FIG. Figure 4 As shown in (b), there is a problem that the semiconductor chip 1 is transferred to the transferred substrate 30 at an angle due to the surrounding retaining layer 19. However, by the retaining layer removal step in Example 1 of the present invention, the surrounding retaining layer 19 is not formed, and transfer can be performed with high accuracy.

[0047] Next, the entire semiconductor chip 1b and its surroundings are irradiated with laser 111, and the holding layer exposed in a quadrangular ring around the semiconductor chip 1b and a portion of the holding layer around the second main surface side of the semiconductor chip 1b are subjected to a holding layer removal step. Furthermore, the holding layer removal step is sequentially performed similarly to the semiconductor chip 1c, the semiconductor chip 1d, the semiconductor chip 1e, the semiconductor chip 1f, and the semiconductor chip 1g.

[0048] If the retaining layer removal process for the semiconductor chips 1a~1g in the first column is completed, the retaining layer removal process for the semiconductor chips 2a~2g in the second column is carried out while moving the substrate retaining portion 114, and then the retaining layer removal process for the semiconductor chips 3a~3g in the third column, the semiconductor chips 4a~4g in the fourth column, and the semiconductor chips 5a~5g in the fifth column is carried out, so that the retaining layer 10 bonding all the semiconductor chips 1 has a size equal to or smaller than the size of the semiconductor chip 1, and the retaining layer that may be surrounding the side is eliminated.

[0049] In the first embodiment, after the semiconductor chips 1a to 1g in the first row, the holding layer removal process is performed on the semiconductor chips 2a to 2g in the second row, and then the holding layer removal process is performed on the semiconductor chips 3a to 3g in the third row, the semiconductor chips 4a to 4g in the fourth row, and the semiconductor chips 5a to 5g in the fifth row, but the present invention is not necessarily limited to this and can be appropriately changed. For example, after the semiconductor chips 1a, 2a, 3a, 4a, and 5a in the first row, the holding layer removal process can be performed with the semiconductor chips 1b to 5b in the second row as the center, and then the holding layer removal process can be performed with the semiconductor chips 1c to 5c in the third row, the semiconductor chips 1d to 5d in the fourth row, the semiconductor chips 1e to 5e in the fifth row, the semiconductor chips 1f to 5f in the sixth row, and the semiconductor chips 1g to 5g in the seventh row as the center. As long as the holding layer removal process can be performed on all the semiconductor chips, the order is not limited.

[0050] In the above manner, the following holding layer removal process can be implemented: laser is irradiated in such a manner that the entire configuration range of the holding layer 10 in the arrangement area of ​​the semiconductor chip becomes the irradiation range to remove a part of the holding layer 10. Here, the entire configuration range of the holding layer 10 in the arrangement area of ​​the semiconductor chip refers to the entire configuration range of the holding layer 10 that may surround the side of the semiconductor chip, and does not include the configuration range of the holding layer 10 that may not surround the side of the semiconductor chip.

[0051] By performing the retaining layer removal process on all semiconductor chips, the retaining layer 10 for adhesive retention is located in an area with the same size as the second main surface of the semiconductor chip or an area with a size smaller than the size of the second main surface of the semiconductor chip. When the semiconductor chip 1 adhered and retained to the substrate 20 is transferred, the transfer can be performed with high precision without tilting.

[0052] The device 100 for partially removing the holding layer in the first embodiment can also be used as a laser lift-off device. In this case, after the method for partially removing the holding layer is implemented to leave only the holding layer 10 in an area equal to or smaller than the element (semiconductor chip 1) to hold the element, the laser 111 is irradiated from the laser irradiation unit 112 toward the second main surface side 22 of the light-transmitting substrate 20, thereby removing the remaining holding layer 10 and applying force to the element using gas. That is, laser lift-off is performed.

[0053] In addition, in the first embodiment, the element is a semiconductor chip, but it is not necessarily limited to this and can be changed appropriately. For example, it can be an electronic component such as a resistor or a capacitor, or a material such as a metal sheet. In addition, the holding layer is a component based on bonding, but it is not necessarily limited to this and can be changed appropriately. For example, it can also be a holding layer not based on bonding.

[0054] Thus, in Example 1, a method for partially removing a retaining layer removes a portion of the retaining layer in a substrate on which the second main surface of an element is retained by means of the retaining layer, and is characterized in that the following retaining layer removal process is performed: a portion of the retaining layer is removed by irradiating a laser from the first main surface side of the element in such a manner that the entire area of ​​the configuration range of the retaining layer in the arrangement area of ​​the element becomes the irradiation range. By such a method for partially removing a retaining layer, the retaining layer becomes a size that is equal to or smaller than the size of the second main surface of the element, the retaining layer does not wrap around the side of the element, the element does not tilt during laser peeling, and transfer can be performed with high precision.

[0055] In addition, the partial holding layer removal device removes a part of the holding layer in a substrate on the second main surface of the element being held by the holding layer, and is characterized by comprising:

[0056] a laser irradiation unit that irradiates laser light;

[0057] a substrate holding portion that holds the substrate; and

[0058] a control unit for controlling: while irradiating the laser from the laser irradiation unit from the first main surface side of the element, the laser is moved relative to the substrate holding unit so that the entire area of ​​the arrangement range of the holding layer in the arrangement area of ​​the element becomes the laser irradiation range,

[0059] Through the device for partially removing the retaining layer, the retaining layer becomes equal to or smaller than the size of the second main surface of the element. The retaining layer will not surround the side of the element, the element will not tilt during laser peeling, and transfer can be performed with high precision.

[0060] [Example 2]

[0061] The second embodiment of the present invention is different from the first embodiment in that the laser beam emitted by the laser irradiation unit is a linear laser beam. Figure 5 , Figure 6 Example 2 is described. Figure 5 It is a diagram for explaining the device for partially removing the retaining layer according to the second embodiment of the present invention. Figure 6 It is a diagram for explaining the method of partially removing the retaining layer in Example 2 of the present invention.

[0062] The holding layer partial removal device 200 in the second embodiment has a laser irradiation unit 212 in the holding layer removal unit 210. The laser irradiation unit 212 can irradiate the substrate 20 with a linear laser in the Y-axis direction. That is, the linear laser irradiated to the substrate 20 can be irradiated with one row in the Y-axis direction for the entire area of ​​the arrangement range of the holding layer 10 in the arrangement area of ​​the semiconductor chips 1. Then, the substrate holding unit 214 moves in the X-direction, which is a direction perpendicular to the longitudinal direction of the linear laser irradiation, so as to irradiate the entire area of ​​the arrangement range of the holding layer 10 in the arrangement area of ​​the semiconductor chips 1 with the laser.

[0063] like Figure 6 As shown in (a), with respect to the laser 211, a linear laser 60 is irradiated in the Y-axis direction. The laser 60 can irradiate the semiconductor chips 1a, 2a, 3a, 4a, 5a and their surroundings in the Y-axis direction as the irradiation range. Then, while irradiating the laser 60, the substrate holding portion 214 is moved in the X-axis direction, thereby performing a holding layer removal process with the laser irradiation range centered on the semiconductor chips 1b to 5b in the second row, and then performing a holding layer removal process with the laser irradiation range centered on the semiconductor chips 1c to 5c in the third row, the semiconductor chips 1d to 5d in the fourth row, the semiconductor chips 1e to 5e in the fifth row, the semiconductor chips 1f to 5f in the sixth row, and the semiconductor chips 1g to 5g in the seventh row. In this way, the laser can be irradiated to the entire area of ​​the configuration range of the holding layer 10 in the arrangement area of ​​the semiconductor chips 1.

[0064] Furthermore, in all semiconductor chips, the retaining layer 10 for adhesive retention has a size that is equal to or smaller than the size of the second main surface of the semiconductor chip (element), so that when the semiconductor chip 1 adhesively retained on the substrate 20 is transferred, the transfer can be performed with high precision without tilting.

[0065] In addition, in Example 2, one row in the Y-axis direction is used as the irradiation range, and the substrate holding part 214 moves in the X-direction, but it is not necessarily limited to this and can be appropriately changed. For example, one row in the X-axis direction can also be used as the irradiation range, and the substrate holding part 214 can be moved in the Y-direction. In addition, the substrate holding part 214 can also be kept unchanged, and the laser irradiation part 212 can be moved in a direction perpendicular to the length direction of the linear laser irradiation, as long as the laser spot is relatively moved in a direction perpendicular to the length direction of the linear laser. In addition, the linear laser spot may not be one, and two or more linear lasers may be irradiated simultaneously.

[0066] Thus, in Example 2, a method for partially removing a retaining layer removes a portion of the retaining layer in a substrate to which a second main surface of an element is bonded and retained by means of a retaining layer, and is characterized in that the following retaining layer removal process is performed: a portion of the retaining layer is removed by irradiating a laser from the first main surface side of the element in such a manner that the entire configuration range of the retaining layer in the arrangement area of ​​the element becomes an irradiation range. By means of this method for partially removing a retaining layer, the retaining layer becomes a size that is equal to or smaller than the size of the second main surface of the element, the retaining layer does not wrap around the side of the element, the element does not tilt during laser peeling, and transfer can be performed with high precision.

[0067] In addition, the device for partially removing the holding layer removes a portion of the holding layer in a substrate to which the second main surface of the element is bonded and held by the holding layer, and is characterized in that the device for partially removing the holding layer comprises: a laser irradiation unit for irradiating laser; a substrate holding unit for holding the substrate; and a control unit for performing the following control: while irradiating the laser from the first main surface side of the element from the laser irradiation unit, the laser is moved relative to the substrate holding unit so that the entire area of ​​the configuration range of the holding layer in the arrangement area of ​​the element becomes the laser irradiation range, and through the device for partially removing the holding layer, the holding layer becomes a size that is equal to or smaller than the size of the second main surface of the element, the holding layer does not wrap around the side of the element, the element does not tilt during laser peeling, and transfer can be performed with high precision.

[0068] Possibility of Industrial Application

[0069] The method and device for partially removing a retaining layer of the present invention can be widely used in the field of transferring and mounting components such as semiconductor chips.

[0070] Description of Reference Numerals

[0071] 1 (1a, 1b, 1c, 1d, 1e, 1f, 1g): Semiconductor chip

[0072] 2 (2a, 2b, 2c, 2d, 2e, 2f, 2g): Semiconductor chip

[0073] 3 (3a, 3b, 3c, 3d, 3e, 3f, 3g): Semiconductor chip

[0074] 4 (4a, 4b, 4c, 4d, 4e, 4f, 4g): semiconductor chip

[0075] 5 (5a, 5b, 5c, 5d, 5e, 5f, 5g): semiconductor chip

[0076] 1A: First main surface

[0077] 1B: Second main surface

[0078] 10: Keep Layers

[0079] 19: Around the holding layer

[0080] 20: Substrate

[0081] 21: First main surface

[0082] 22: Second main surface

[0083] 30: Transfer substrate

[0084] 100: Device for partial removal of retaining layer

[0085] 110: Retention layer removal unit

[0086] 111: Laser

[0087] 112: Laser irradiation unit

[0088] 114: Substrate holding portion

[0089] 115: Current Mirror

[0090] 116: fθ lens

[0091] 200: Device for partial removal of retaining layer

[0092] 210: Retention layer removal unit

[0093] 211: Laser

[0094] 212: Laser irradiation unit

[0095] 214: Substrate holding part

Claims

1. A method for partially removing a holding layer, wherein a portion of the holding layer is removed from a substrate having a second main surface on which a component is held by the holding layer, wherein: The holding layer removal step is performed by irradiating the element from the first main surface side with a laser beam so that the entire arrangement range of the holding layer in the element arrangement region becomes an irradiation range, thereby removing a portion of the holding layer.

2. The method for partially removing the retaining layer according to claim 1, characterized in that: The size of the laser spot irradiated in the retaining layer removal process includes at least the entire area of ​​the first main surface of at least one of the elements and the retaining layer around the element, and the laser having the laser spot is relatively moved to irradiate the entire area of ​​the configuration range of the retaining layer in the arrangement area of ​​the element with the laser.

3. The method for partially removing the retaining layer according to claim 1, characterized in that: The laser irradiation in the retaining layer removal step is linear, and the laser irradiation is relatively moved in a direction perpendicular to the longitudinal direction of the linear laser irradiation, so that the entire arrangement range of the retaining layer in the arrangement area of ​​the elements is irradiated with the laser.

4. A device for partially removing a holding layer, which removes a portion of the holding layer in a substrate having a second main surface on which a component is held by the holding layer, characterized in that: The device for partially removing the retaining layer comprises: a laser irradiation unit that irradiates laser light; a substrate holding portion that holds the substrate; and A control unit performs the following control: while irradiating the laser from the first main surface side of the element from the laser irradiation unit, the laser is moved relative to the substrate holding unit so that the entire configuration range of the holding layer in the arrangement area of ​​the element becomes the laser irradiation range.

Images