Semiconductor slurry suitable for low-temperature sintering and manufacturing method thereof

Abstract

The invention discloses a semiconductor paste suitable for low temperature sintering and a manufacturing method thereof, and the semiconductor paste comprises a paste body part and metal particles dispersed in the paste body part. The paste body part contains 15%-25% of propylene glycol monomethyl ether, 4%-9% of isopropyl toluene, 3%-7% of rosin amine polyoxyethylene ether, 3%-5% of glycerol diabietate, 1%-4% of glycerol diabietate ether and 1%-3% of grease turpentine, and the metal particles contain 25%-30% of bismuth powder, 3%-6% of indium powder and the balance tin-silver-copper alloy powder. During preparation, the paste part is prepared through hot melting stirring and emulsification, and the metal particles are prepared through granulation processing; and uniformly mixing the paste part with the metal particles through vacuum stirring to obtain the semiconductor paste which is low in sintering temperature, short in sintering time, few in paste residue after sintering, and excellent in surface corrosion resistance, conductivity and bonding strength.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor materials, and in particular to a semiconductor slurry suitable for low-temperature sintering and a preparation method thereof. Background Art

[0002] With the development of the electronics industry, the precision of electronic devices is getting higher and higher. Therefore, in the chip packaging process, in addition to improving the requirements for device precision, the requirements for device temperature resistance and thermal shock resistance are also greatly improved.

[0003] In the traditional packaging process, the materials commonly used include but are not limited to nano silver paste, high silver, high gold tin-based paste, etc. When the above materials are used for packaging, the welding or sintering temperature is designed to be about 40°C to 50°C higher than the melting point of the material used, and generally not lower than 255°C. However, in actual applications, the above welding or sintering temperatures are likely to cause deformation of the packaging substrate, poor wire bonding, and a lot of residue in the slurry paste used in conjunction with it after sintering. In particular, the residue of the slurry paste is prone to corrode the interface of the packaging substrate in a high temperature and high humidity environment, thereby seriously affecting the service life and reliability of the semiconductor chip after packaging. In view of this, the present invention is specially proposed. Summary of the invention

[0004] In order to overcome the above-mentioned defects, the present invention provides a semiconductor slurry suitable for low-temperature sintering and a preparation method thereof. The preparation method is simple, reasonable and easy to operate. The prepared semiconductor slurry has the characteristics of low sintering temperature, short sintering time, less paste residue after sintering, excellent surface corrosion resistance, conductivity and bonding strength, etc., which well meet the market demand for low-temperature sintering semiconductor materials.

[0005] The technical solution adopted by the present invention to solve the technical problem is: a semiconductor slurry suitable for low-temperature sintering, comprising a paste part and metal particles uniformly dispersed in the paste part, based on the total weight of the semiconductor slurry, the paste part contains 15% to 25% of propylene glycol methyl ether, 4% to 9% of isopropyl toluene, 3% to 7% of rosin amine polyoxyethylene ether, 3% to 5% of diabietic acid glycerol, 1% to 4% of diabietic acid glycerol ether and 1% to 3% of turpentine, and the metal particles contain 25% to 30% of bismuth powder, 3% to 6% of indium powder and the balance of tin-silver-copper alloy powder.

[0006] As a further improvement of the present invention, the purity of the bismuth powder is greater than 99.95%; the particle size of the bismuth powder is 25-45 μm, wherein the proportion of bismuth powder with a particle size of 35-40 μm is not less than 70%.

[0007] As a further improvement of the present invention, the particle shapes of the bismuth powder include spherical and quasi-spherical, wherein the proportion of bismuth powder with quasi-spherical particle shape is no more than 5%, and the ratio of the major axis to the minor axis in the quasi-spherical particles is no more than 1.2.

[0008] As a further improvement of the present invention, the purity of the indium powder is greater than 99.99%, the particle size of the indium powder is 25-45 μm, and the particle shape of the indium powder is spherical.

[0009] As a further improvement of the present invention, based on the weight of the tin-silver-copper alloy powder, the weight percentages of the elements in the tin-silver-copper alloy powder are: tin element: 99%±0.02%; silver element: 0.8%±0.02%; copper element: 0.2%±0.02%.

[0010] As a further improvement of the present invention, the particle size of the tin-silver-copper alloy powder is 20 to 38 μm, wherein the tin-silver-copper alloy powder with a particle size of 28 to 35 μm accounts for no less than 80%;

[0011] The particle shapes of the tin-silver-copper alloy powder include spherical and quasi-spherical shapes, wherein the proportion of the tin-silver-copper alloy powder with quasi-spherical particles is no more than 3%, and the ratio of the major axis to the minor axis in the quasi-spherical particles is no more than 1.2.

[0012] The present invention also provides a method for preparing a semiconductor slurry suitable for low temperature sintering, comprising the following steps:

[0013] S1: Put the formulated amount of propylene glycol methyl ether, isopropyl toluene, rosin amine polyoxyethylene ether and diabietic acid glycerol into a stirring device, and heat and stir to melt and mix the above materials, and then cool to room temperature to obtain a mixture A;

[0014] S2: putting the obtained mixture A, and the formulated amount of diabietic acid glyceride ether and gum turpentine into an emulsifier for emulsification treatment, so as to obtain the paste part;

[0015] S3: putting the formulated amount of bismuth powder, indium powder and tin-silver-copper alloy powder into a granulator for granulation processing to obtain the metal particles;

[0016] S4: Put the paste and the metal particles prepared above into a vacuum mixer and stir until the vacuum pressure is less than 10 -3 Pa, the working temperature is room temperature, and the stirring speed is 190-210 r / min, and stirring is performed for 50-60 minutes to obtain the semiconductor slurry suitable for low-temperature sintering.

[0017] As a further improvement of the present invention, in the above S1, during the stirring and mixing, the temperature is raised to 60°C to 75°C, and the stirring speed is 500 to 650 r / min;

[0018] In the above S2, the processing parameters of the emulsifier are: shear speed of 2100-2300 r / min, and emulsification time of 12-20 min.

[0019] As a further improvement of the present invention, in the above S3, during the granulation process, a granulation solution needs to be added into the granulator, and the granulation solution is anhydrous ethanol with a purity of 99.5%.

[0020] As a further improvement of the present invention, in the above S4, the vacuum mixer adopts a double planetary vacuum mixer.

[0021] The beneficial effects of the present invention are: ① Through technological innovation, the present invention has prepared a semiconductor slurry suitable for low-temperature sintering, which not only has a low sintering temperature and a short sintering time, but can also effectively avoid the thermal shock of excessive sintering temperature to the packaging substrate (especially the sensitive substrate); and there is less paste residue after sintering, and it has excellent surface corrosion resistance, conductivity and bonding strength, which greatly improves the reliability and service life of the semiconductor products after packaging. ② The preparation method of the semiconductor slurry provided by the present invention is simple, reasonable, and easy to operate, and the relevant raw materials are easy to obtain, the cost is not high, and it is more environmentally friendly. In short, the semiconductor slurry prepared by the present invention has well met the current market demand for low-temperature sintering semiconductor materials to a certain extent, and has also filled the technical gap in this regard. DETAILED DESCRIPTION

[0022] The present invention is further described in detail below with reference to specific embodiments, but the present invention is not limited to these embodiments.

[0023] The present invention discloses a semiconductor slurry suitable for low-temperature sintering and a method for making the same. The method for making the semiconductor slurry is simple, reasonable and easy to operate. The prepared semiconductor slurry has the characteristics of low sintering temperature, short sintering time, less paste residue after sintering, excellent surface corrosion resistance, conductivity and bonding strength. The reason for this is that the present invention optimizes and innovates the raw material formula of the semiconductor slurry. The specific description is as follows:

[0024] 1. Prepare the semiconductor slurry suitable for low temperature sintering according to the present invention;

[0025] Embodiment 1:

[0026] This embodiment 1 provides a method for preparing a semiconductor slurry suitable for low temperature sintering, which mainly includes the following preparation steps:

[0027] S1: 15 kg of propylene glycol methyl ether, 4 kg of isopropyl toluene, 3 kg of rosin amine polyoxyethylene ether and 3 kg of diabietic acid glycerol are put into a stirring device, the temperature is raised to 60° C. to 75° C., and the above four materials are hot-melted and mixed while heating and stirring, and then cooled to room temperature to obtain a mixture A.

[0028] Furthermore, during stirring and mixing, the stirring speed of the stirring equipment is optimally controlled to be 500-650 r / min, and the stirring time is optimally controlled to be 15-20 min; specifically, the stirring speed is 650 r / min, and the stirring time is 15 min.

[0029] S2: The obtained mixture A, 1 kg of diabietic acid glyceryl ether and 1 kg of turpentine are put into an emulsifier, and emulsified for 12 to 20 minutes at a shear speed of 2100 to 2300 r / min to obtain the paste part.

[0030] Furthermore, the processing parameters of the emulsifier are preferably designed as follows: shear speed is 2200 r / min, and emulsification time is 15 min.

[0031] S3: 30 kg of bismuth powder, 6 kg of indium powder and 37 kg of tin-silver-copper alloy powder are put into a granulator for granulation processing to obtain the metal particles.

[0032] Furthermore, in order to meet the requirements of low-temperature sintering, the performance parameters of the above-mentioned metal powder (metal powder is a general term for the bismuth powder, indium powder and tin-silver-copper alloy powder) are optimized in this embodiment 1, which are specifically manifested as follows:

[0033] ① The purity of the bismuth powder is greater than 99.95%; the particle size of the bismuth powder is 25-45 μm, of which the proportion of bismuth powder with a particle size of 35-40 μm is not less than 70%; the particle shape of the bismuth powder includes spherical and quasi-spherical particles, of which the proportion of bismuth powder with a quasi-spherical particle shape is not more than 5%, and the ratio of the major axis to the minor axis in the spherical particles is not more than 1.2.

[0034] ② The purity of the indium powder is greater than 99.99%, the particle size of the indium powder is 25-45 μm, and the particle shape of the indium powder is spherical.

[0035] ③ Based on the weight of the tin-silver-copper alloy powder, the weight percentage of each element in the tin-silver-copper alloy powder is: tin element (Sn): 99%±0.02%; silver element (Ag): 0.8%±0.02%; copper element (Cu): 0.2%±0.02%.

[0036] The particle size of the tin-silver-copper alloy powder is 20-38 μm, of which the proportion of the tin-silver-copper alloy powder with a particle size of 28-35 μm is not less than 80%; the particle shape of the tin-silver-copper alloy powder includes spherical and quasi-spherical, of which the proportion of the tin-silver-copper alloy powder with a quasi-spherical particle shape is not more than 3%, and the ratio of the major axis to the minor axis in the spherical particles is not more than 1.2.

[0037] Furthermore, during the granulation process, a granulation solution needs to be added to the granulator. In this embodiment 1, the granulation solution is preferably anhydrous ethanol with a purity of 99.5%. In addition, regarding the amount of the granulation solution added, this embodiment 1 is designed to be such that the liquid level of the granulation solution is above the metal powder.

[0038] S4: Put the paste and the metal particles prepared above into a vacuum mixer (specifically a double planetary vacuum mixer) and stir at a vacuum pressure of less than 10 -3 Pa, the working temperature is room temperature, and the stirring speed is 190-210r / min. Stir for 50-60min to obtain a semiconductor slurry suitable for low-temperature sintering.

[0039] Furthermore, the processing parameters of the vacuum mixer are preferably designed as follows: the vacuum pressure is less than 10 -3 Pa, stirring speed is 200r / min, and stirring time is 60min.

[0040] Embodiment 2:

[0041] The second embodiment also provides a method for preparing a semiconductor paste suitable for low-temperature sintering. Compared with the first embodiment, the second embodiment is different from the first embodiment in that the raw material formula of the semiconductor paste used in the second embodiment is different from that in the first embodiment.

[0042] Specifically, the raw material formula of the semiconductor slurry used in this embodiment 2 is: 18Kg of propylene glycol methyl ether, 6Kg of isopropyl toluene, 5Kg of rosin amine polyoxyethylene ether, 4Kg of diabietic acid glycerol, 2Kg of diabietic acid glycerol ether, 2Kg of turpentine, 28Kg of bismuth powder, 5Kg of indium powder, and 30Kg of tin-silver-copper alloy powder.

[0043] Note: In addition to the above differences, the specific characteristics of the raw materials used in this Example 2 (such as purity, particle size, particle shape, etc.), as well as the processing parameters used during stirring, hot melt mixing, emulsification, granulation, and vacuum stirring are the same as those in Example 1, so they are not repeated here.

[0044] Embodiment 3:

[0045] The third embodiment also provides a method for preparing a semiconductor paste suitable for low-temperature sintering. Compared with the first embodiment, the third embodiment is different from the first embodiment in that the raw material formula of the semiconductor paste used in the third embodiment is different from that in the first embodiment.

[0046] Specifically, the raw material formula of the semiconductor slurry used in this embodiment 3 is: propylene glycol methyl ether is 20Kg, isopropyl toluene is 7Kg, rosin amine polyoxyethylene ether is 7Kg, diabietic acid glycerol is 4Kg, diabietic acid glycerol ether is 3Kg, turpentine is 2Kg, bismuth powder is 26Kg, indium powder is 4Kg, and tin-silver-copper alloy powder is 27Kg.

[0047] Note: In addition to the above differences, the specific characteristics of the raw materials used in this Example 3 (such as purity, particle size, particle shape, etc.), as well as the processing parameters used in stirring, hot melt mixing, emulsification, granulation, and vacuum stirring are the same as those in Example 1, so they are not repeated here.

[0048] Embodiment 4:

[0049] The fourth embodiment also provides a method for preparing a semiconductor paste suitable for low-temperature sintering. Compared with the first embodiment, the fourth embodiment is different from the first embodiment in that the raw material formula of the semiconductor paste used in the fourth embodiment is different from that in the first embodiment.

[0050] Specifically, the raw material formula of the semiconductor slurry used in this embodiment 4 is: propylene glycol methyl ether is 25Kg, isopropyl toluene is 9Kg, rosin amine polyoxyethylene ether is 7Kg, diabietic acid glycerol is 5Kg, diabietic acid glycerol ether is 4Kg, turpentine is 3Kg, bismuth powder is 25Kg, indium powder is 3Kg, and tin-silver-copper alloy powder is 19Kg.

[0051] Note: In addition to the above differences, the specific characteristics of the raw materials used in this Example 4 (such as purity, particle size, particle shape, etc.), as well as the processing parameters used in stirring, hot melt mixing, emulsification, granulation, and vacuum stirring are the same as those in Example 1, so they are not repeated here.

[0052] 2. Performing performance tests on the semiconductor slurry suitable for low temperature sintering obtained by the present invention;

[0053] 2.1) Prepare test samples;

[0054] Take six mirror substrates that are not etched with silicon carbide (SiC) and have the same size, and uniformly spray-print the semiconductor pastes prepared in Examples 1 to 4 of the present invention, the traditional pure silver paste, and the traditional tin-silver paste (the weight percentage of the tin element is 70%, and the weight percentage of the silver element is 10%) on the six mirror substrates respectively, and spray-print to form a comb-shaped pattern. The parameters of the comb-shaped pattern are: the length of the comb back is 100 mm and the width is 2 mm; the comb teeth are configured as two and arranged side by side, the length of the comb teeth is 25 mm, and the width of the comb teeth is gradually reduced from 2.5 mm to 0.1 mm along the length direction; then solidify the sample to obtain the test sample.

[0055] For the convenience of subsequent description, the test sample prepared using the semiconductor paste obtained in Example 1 is defined as "Sample I"; the test sample prepared using the semiconductor paste obtained in Example 2 is defined as "Sample II"; the test sample prepared using the semiconductor paste obtained in Example 3 is defined as "Sample III"; the test sample prepared using the semiconductor paste obtained in Example 4 is defined as "Sample IV"; the test sample prepared using traditional pure silver paste is defined as "Sample V"; and the test sample prepared using traditional tin-silver paste is defined as "Sample VI".

[0056] 2.2) Performing performance tests on the obtained test samples;

[0057] The test content includes:

[0058] ①Sintering test;

[0059] The test method is: put the above six test samples into the same constant temperature heating furnace (power is 5500K), and record the corresponding peak temperature (ie, sintering temperature) and the required time (ie, sintering time) when the test samples are completely sintered.

[0060] ②Aging resistance / corrosion resistance test;

[0061] The test method is: put the six test samples after the sintering test into the same aging box, and age them for 294 hours at a temperature of 85°C and a relative humidity of 85% (including 5% salt spray); then observe whether there is corrosion and discoloration on the interface surface of the test sample.

[0062] Table 1 below shows the performance test results of the above six test samples.

[0063] Table 1 Performance test results of the test samples obtained in the present invention

[0064]

[0065] It can be seen from Table 1 that ① in terms of sintering test, the sintering temperatures corresponding to samples Ⅰ to Ⅳ when fully sintered are lower than the sintering temperatures corresponding to samples Ⅴ and Ⅵ when fully sintered, and the sintering times corresponding to samples Ⅰ to Ⅳ when fully sintered are shorter than the sintering times corresponding to samples Ⅴ and Ⅵ when fully sintered; that is, it shows that the semiconductor paste obtained by the present invention has a low sintering temperature and a short sintering time, thereby effectively avoiding the thermal shock of excessive sintering temperature and / or excessive sintering time to the packaging substrate (especially sensitive substrates). ② In terms of aging resistance / corrosion resistance test, samples Ⅰ to Ⅳ can achieve no discoloration and no corrosion at the interface under aging resistance / corrosion resistance test conditions, which is far better than samples Ⅴ and Ⅵ; that is, it shows that the semiconductor paste obtained by the present invention has excellent interface corrosion resistance.

[0066] The reason why the semiconductor slurry obtained by the present invention can achieve the above advantages is that the present invention optimizes and innovates the raw material formula of the semiconductor slurry, which is specifically manifested in that the semiconductor slurry prepared by the present invention is mainly composed of a paste part and metal particles uniformly dispersed in the paste part, wherein the paste part is mainly made of propylene glycol methyl ether, isopropyl toluene, rosin amine polyoxyethylene ether, diabietic acid glyceride, diabietic acid glyceride ether and turpentine oil, mixed and emulsified according to the optimal addition amount, and the metal particles are mainly made of bismuth powder, indium powder and tin-silver-copper alloy powder according to the optimal addition amount and granulated. It can be understood that ① based on the preferred raw material formula of the paste part, the paste part can have excellent properties such as viscosity, stability, thixotropy and rheology, which can not only achieve uniform mixing with the metal particles, but also ensure that the semiconductor slurry is evenly distributed during packaging, thereby improving the packaging quality. ② Based on the preferred raw material formula of the paste part, the rosin amine polyoxyethylene ether therein can promote the uniform and dense distribution of rosin pine oil at the interface of the packaging substrate after sintering, thereby effectively reducing the paste residue after sintering and playing a very effective anti-corrosion role on the interface, ensuring the service life and reliability of the sintering interface. In addition, due to the reduction of paste residue after sintering, the post-process cleaning process is simplified, thereby reducing production costs. ③ Based on the preferred raw material formula of the metal particles, not only can the melting point of the metal particles be effectively reduced, so that the semiconductor slurry can achieve a lower sintering temperature (such as the above-mentioned 167°C to 193°C), thereby effectively avoiding the thermal shock of the packaging substrate (especially the sensitive substrate) caused by the excessive sintering temperature; it can also greatly improve the wetting properties of the metal particles, ensuring that the metal particles are evenly dispersed in the paste part, and improving the uniformity and sintering quality of the semiconductor slurry. ④ Based on the preferred raw material formula of the metal particles, when sintering is performed using the semiconductor slurry obtained by the present invention, the metal indium in the metal particles first melts and then quickly melts with the metal bismuth and the tin-silver-copper alloy, and forms a "tin-silver-copper-bismuth-indium" five-element alloy during the melting process. After cooling, the five-element alloy can form a uniform and dense metal layer at the packaging position, thereby achieving excellent conductivity and bonding strength that are far superior to traditional packaging materials such as traditional silver paste.

[0067] In summary, the present invention has produced a semiconductor paste suitable for low-temperature sintering through technological innovation. It not only has a low sintering temperature and a short sintering time, but can also effectively avoid the thermal shock of excessive sintering temperature to the packaging substrate (especially the sensitive substrate); and the paste residue after sintering is small, and has excellent surface corrosion resistance, conductivity and bonding strength, which greatly improves the reliability and service life of the semiconductor product after packaging. In short, the semiconductor paste produced by the present invention has well met the current market demand for low-temperature sintering semiconductor materials to a certain extent, and has also filled the technical gap in this regard.

[0068] Many specific details are described in the above description to facilitate a full understanding of the present invention. However, the above description is only a preferred embodiment of the present invention. The present invention can be implemented in many other ways different from those described herein, so the present invention is not limited to the specific implementation disclosed above. At the same time, any person familiar with the art can make many possible changes and modifications to the technical solution of the present invention using the methods and technical contents disclosed above without departing from the scope of the technical solution of the present invention, or modify it into an equivalent embodiment of equivalent changes. Any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of protection of the technical solution of the present invention.

Claims

1. A semiconductor slurry suitable for low temperature sintering, characterized in that: The invention comprises a paste part and metal particles uniformly dispersed in the paste part. Based on the total weight of the semiconductor slurry, the paste part contains 15% to 25% of propylene glycol methyl ether, 4% to 9% of isopropyl toluene, 3% to 7% of rosin amine polyoxyethylene ether, 3% to 5% of diabietic acid glycerol, 1% to 4% of diabietic acid glycerol ether and 1% to 3% of turpentine, and the metal particles contain 25% to 30% of bismuth powder, 3% to 6% of indium powder and the balance of tin-silver-copper alloy powder.

2. The semiconductor slurry suitable for low temperature sintering according to claim 1, characterized in that: The purity of the bismuth powder is greater than 99.95%; the particle size of the bismuth powder is 25-45 μm, wherein the proportion of bismuth powder with a particle size of 35-40 μm is not less than 70%.

3. The semiconductor slurry suitable for low temperature sintering according to claim 2, characterized in that: The particle shapes of the bismuth powder include spherical and quasi-spherical shapes, wherein the proportion of bismuth powder with quasi-spherical particle shapes is no more than 5%, and the ratio of the major axis to the minor axis in the quasi-spherical particles is no more than 1.

2.

4. The semiconductor slurry suitable for low temperature sintering according to claim 1, characterized in that: The purity of the indium powder is greater than 99.99%, the particle size of the indium powder is 25-45 μm, and the particle shape of the indium powder is spherical.

5. The semiconductor slurry suitable for low temperature sintering according to claim 1, characterized in that: Based on the weight of the tin-silver-copper alloy powder, the weight percentages of the elements in the tin-silver-copper alloy powder are as follows: tin element: 99%±0.02%; silver element: 0.8%±0.02%; copper element: 0.2%±0.02%.

6. The semiconductor slurry suitable for low temperature sintering according to claim 1, characterized in that: The particle size of the tin-silver-copper alloy powder is 20-38 μm, wherein the tin-silver-copper alloy powder with a particle size of 28-35 μm accounts for no less than 80%; The particle shapes of the tin-silver-copper alloy powder include spherical and quasi-spherical shapes, wherein the proportion of the tin-silver-copper alloy powder with quasi-spherical particles is no more than 3%, and the ratio of the major axis to the minor axis in the quasi-spherical particles is no more than 1.

2.

7. A method for preparing a semiconductor slurry suitable for low temperature sintering according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1: Put the formulated amount of propylene glycol methyl ether, isopropyl toluene, rosin amine polyoxyethylene ether and diabietic acid glycerol into a stirring device, and heat and stir to melt and mix the above materials, and then cool to room temperature to obtain a mixture A; S2: putting the obtained mixture A, and the formulated amount of diabietic acid glyceride ether and gum turpentine into an emulsifier for emulsification treatment, so as to obtain the paste part; S3: putting the formulated amount of bismuth powder, indium powder and tin-silver-copper alloy powder into a granulator for granulation processing to obtain the metal particles; S4: Put the paste and the metal particles prepared above into a vacuum mixer and stir until the vacuum pressure is less than 10 -3 Pa, the working temperature is room temperature, and the stirring speed is 190-210 r / min, and stirring is performed for 50-60 minutes to obtain the semiconductor slurry suitable for low-temperature sintering.

8. The method for preparing semiconductor slurry suitable for low temperature sintering according to claim 7, characterized in that: In the above S1, during the stirring and mixing, the temperature is raised to 60°C to 75°C, and the stirring speed is 500 to 650 r / min; In the above S2, the processing parameters of the emulsifier are: shear speed of 2100-2300 r / min, and emulsification time of 12-20 min.

9. The method for preparing semiconductor slurry suitable for low temperature sintering according to claim 7, characterized in that: In the above S3, during the granulation process, a granulation solution needs to be added into the granulator, and the granulation solution is anhydrous ethanol with a purity of 99.5%.

10. The method for preparing semiconductor slurry suitable for low temperature sintering according to claim 7, characterized in that: In the above S4, the vacuum mixer is a double planetary vacuum mixer.

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