A process for patterning a high-flatness chromium protective layer
By adopting the patterning process of high-flatness chromium protective layer in the micro-nano processing process of semiconductor devices and using wet mixed solutions of different concentrations for etching, the particles and complex residue problems caused by the metal chromium corrosion barrier layer in the micro-nano processing process of semiconductor devices are solved, and a metal surface with high flatness and stability is achieved.
Patent Information
- Application Number
- CN202411836503.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-13
- Publication Date
- 2025-04-08
AI Technical Summary
In the micro-nano processing technology of semiconductor devices, when metal chromium is used as the corrosion barrier layer, conventional chromium corrosion liquid can easily cause particles and complexes to be produced on the wafer surface, affecting the etching uniformity and subsequent process stability, and dry etching can easily cause overetching and metal layer damage.
A high-flatness chromium protective layer patterning process is adopted, and pre-etching and secondary etching is performed by a wet mixed solution of medium and low concentrations to remove the surface passivation layer and complex to form a flat chromium mask layer; finally, the full-side etching is performed using a high-concentration wet mixed solution to remove the chromium mask layer to obtain a smooth and clean metal surface.
A high flatness chromium protective layer is achieved, which avoids the residue of particles and complexes, improves the etching uniformity and the stability of subsequent processes, avoids the overetching problem of dry etching, and the process is controllable, and the use of mixed solutions with different concentrations of the same components is simplified.
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Abstract
Description
Technical Field
[0001] The invention relates to the technical field of semiconductor device micro-nano processing, and in particular to a process method for patterning a high-flatness chromium protective layer. Background Art
[0002] In the micro-nano processing of semiconductor devices, metallization processes such as evaporation or sputtering are used to deposit different metal materials on the substrate wafer as adhesion layers, seed layers, barrier layers, mask layers, etc., including gold, titanium, titanium dock, copper, chromium, aluminum, etc. These metal materials not only have excellent electrical conductivity, adhesion, corrosion resistance and other properties, but also easily form a good stress match with the substrate material, and are widely used in MEMS device fields such as filters, phase shifters, circulators, etc.
[0003] In the semiconductor manufacturing process, photolithography masks are widely used. In the wet etching process, metal chromium is rarely used as a corrosion barrier for patterning. Other protective layer metals often have the phenomenon of adhesion layer shedding due to poor metal coverage, which will affect the etching uniformity and the surface state of the wafer, and affect the stability of subsequent electroplating or other processes. Conventional chromium etching solutions are mostly solutions with ammonium cerium nitrate as a single component. This component can easily cause particles on the wafer surface during the process and form a large number of complexes and aggregates. In the dry etching process, over-etching can easily cause damage to the metal layer and residual chromium metal film.
[0004] Therefore, it is urgent to solve the above problems. Summary of the invention
[0005] Purpose of the invention: The purpose of the present invention is to provide a process method for patterning a high-flatness chromium protective layer, which utilizes the chromium protective layer as a mask, and utilizes medium-concentration and low-concentration wet mixed solutions to achieve patterning processes of different precision sizes, and utilizes high-concentration wet mixed solutions to form a clean surface suitable for semiconductor processes.
[0006] Technical solution: To achieve the above purpose, the present invention discloses a process for patterning a high-flatness chromium protective layer, comprising the following steps:
[0007] (1) preparing a substrate wafer and wet cleaning it, and sputtering an adhesion layer and a seed layer on the substrate wafer in sequence as a bottom metal;
[0008] (2) evaporating or sputtering metal chromium on the seed layer as a barrier layer to form a composite metal film structure;
[0009] (3) Spin-coating a photoresist on the composite metal film structure, exposing and developing the film, and performing a post-baking treatment;
[0010] (4) pre-etching the chromium using a medium concentration wet mixed solution to remove the surface passivation layer and roughen the chromium protective layer;
[0011] (5) secondary etching using a low-concentration wet mixed solution to remove the complex and obtain a chromium mask layer with smooth pattern lines;
[0012] (6) electroplating a metal layer on the seed layer and removing the photoresist;
[0013] (7) Use a high-concentration wet mixed solution to etch the entire surface to remove the chromium mask layer and obtain the desired metal surface.
[0014] Optionally, the medium concentration wet mixed solution in step (4) is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 25% to 30%, the proportion of hydrochloric acid is 5% to 10%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the graphic etching time is 10-15s.
[0015] Optionally, the low-concentration wet mixed solution in step (5) is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 5% to 10%, the proportion of hydrochloric acid is 3% to 5%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the secondary etching time is 5 to 10 seconds.
[0016] Optionally, the electroplated metal layer in step (6) is one of metals Au and Cu, and the thickness of the electroplated metal layer is 1.5 to 3.5 um.
[0017] Optionally, the high-concentration wet mixed solution in step (7) is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 45% to 55%, the proportion of hydrochloric acid is 5% to 10%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the whole surface etching time is 25 to 35 seconds.
[0018] Optionally, the adhesion layer in step (1) is one or more of metals selected from Ti, TiW, W, and Ta, and the thickness of the adhesion layer is 100 nm to 300 nm.
[0019] Optionally, the seed layer in step (1) is one or more of metals Au, Cu, and Al, and the thickness of the seed layer is 100 nm to 300 nm.
[0020] Optionally, the thickness of the barrier layer in step (2) is 30 nm to 100 nm.
[0021] Optionally, the photoresist in step (3) is a negative photoresist.
[0022] Optionally, the post-baking temperature in step (3) is 80°C to 120°C.
[0023] Beneficial effects: Compared with the prior art, the present invention has the following significant advantages:
[0024] (1) The present invention uses metallic chromium as an etching barrier layer and uses a wet etching process to perform a patterning process; first, a medium-concentration wet mixed solution is used for pre-etching to remove the surface metal passivation layer and roughen the chromium protective layer; then a low-concentration wet mixed solution is used for secondary etching to correct the graphic lines, remove the particles and complex aggregates at the edges, and obtain a chromium mask layer with smooth graphic lines, thereby providing a high-precision patterned structure surface for electroplating; finally, a high-concentration wet mixed solution is used for overall etching to remove the chromium mask layer on the entire surface, thereby providing a smooth and clean seed layer metal surface for subsequent processes; the process of the present invention is controllable, the etching solution is simple to prepare, and the process is carried out using a mixed solution of the same component but different concentrations, thereby achieving high work efficiency.
[0025] (2) The present invention adopts three multi-component wet mixed solutions of different concentrations, and the proportions include inorganic oxygen-containing acid, hydrochloric acid, acidic additives and water; the main purpose of the first pre-etching is to remove the surface passivation layer, the etching time is controllable, side etching and drilling etching will not occur, and the passivation layer is removed more evenly; the main purpose of the second etching is to correct the lines and obtain a flat and smooth graphic morphology; the main purpose of the third etching is to remove the chromium mask layer on the entire surface, and the high-concentration mixed solution has high removal efficiency and better process effect.
[0026] (3) The present invention avoids the over-etching of the underlying metal layer by dry etching. The dry etching has a large etching amount on the composite metal layer, and the over-etching of the seed layer metal is not easy to control. The present invention can more accurately control the side etching amount through pre-etching and secondary etching, and the etching amount of the side lines during the corrosion process is small. Moreover, the multi-component mixed solution does not react with the seed layer metal during the process, can protect the underlying metal, and can avoid the phenomenon of metal chromium complexes and aggregates remaining on the surface. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 It is a process flow chart of the present invention;
[0028] Figure 2 This is an example etching result diagram of the present invention;
[0029] Figure 3 This is an example of etching results of a single-component etching solution in the present invention. DETAILED DESCRIPTION
[0030] The technical solution of the present invention is further described below in conjunction with the accompanying drawings.
[0031] like Figure 1 As shown, a process method for patterning a high-flatness chromium protective layer of the present invention comprises the following steps:
[0032] (1) Prepare a substrate wafer and wet clean it, and sputter an adhesion layer and a seed layer on the substrate wafer in sequence as the bottom metal; the adhesion layer is one or more of metals selected from Ti, TiW, W, and Ta, and the thickness of the adhesion layer is 100 nm to 300 nm; the seed layer is one or more of metals selected from Au, Cu, and Al, and the thickness of the seed layer is 100 nm to 300 nm.
[0033] (2) Evaporating or sputtering metal chromium on the seed layer as a barrier layer to form a composite metal film structure; the thickness of the barrier layer is 30nm to 100nm.
[0034] (3) Spin-coating a photoresist on the metal chromium of the composite metal film structure, exposing and developing the photoresist, and performing a post-baking treatment; the photoresist is a negative photoresist, and the post-baking temperature is 80° C. to 120° C.
[0035] (4) Pre-etching chromium with a medium-concentration wet mixed solution to remove the surface passivation layer and roughen the chromium protective layer; the medium-concentration wet mixed solution is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 25% to 30%, the proportion of hydrochloric acid is 5% to 10%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the patterning etching time is 10-15s.
[0036] (5) A low-concentration wet mixed solution is used for secondary etching to remove the complex and obtain a chromium mask layer with smooth graphic lines; the low-concentration wet mixed solution is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 5% to 10%, the proportion of hydrochloric acid is 3% to 5%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the secondary etching time is 5 to 10 seconds.
[0037] (6) electroplating a metal layer on the seed layer and removing the photoresist; the electroplated metal layer is one of metals Au and Cu, and the thickness of the electroplated metal layer is 1.5 to 3.5 um.
[0038] (7) Using a high-concentration wet mixed solution for full-surface etching to remove the chrome mask layer and obtain a smooth and clean metal surface, the high-concentration wet mixed solution is a mixed solution of inorganic oxygen-containing acids, wherein the inorganic hydrochloric acid ratio is 45% to 55%, the hydrochloric acid ratio is 5% to 10%, the acidic additive ratio is 0.1 to 0.6%, and the rest is pure water; the full-surface etching time is 25 to 35 seconds. In the present invention, high flatness refers to a minimum line width of 5um.
[0039] Example 1
[0040] Example 1 discloses a process for patterning a high-flatness chromium protective layer, comprising the following steps:
[0041] (1) preparing a Si substrate wafer and performing wet cleaning using a 1% BOE solution, wherein the substrate material is P-type medium-resistance silicon; sputtering a 100 nm Ti adhesion layer and a 100 nm Au seed layer on the Si substrate wafer in sequence as the bottom metal;
[0042] (2) evaporating a 30 nm Cr metal layer on the seed layer metal as a barrier layer to form a composite metal film structure;
[0043] (3) Spin-coating a negative photoresist on the metal chromium of the composite metal film structure, exposing and developing the photoresist to form a pattern mask protection, and performing a post-baking treatment at 80° C. for 30 min;
[0044] (4) using the negative photoresist after photolithography as a protective layer, using a medium-concentration mixed solution of 25% inorganic oxygen acid, 6% hydrochloric acid, 0.2% acidic additive, and the rest water to pattern pre-etch the chromium for 10 seconds to remove the surface passivation layer and roughen the chromium protective layer;
[0045] (5) using the negative photoresist after photolithography as a protective layer, and performing secondary etching on chromium for 5 seconds using a low-concentration mixed solution of 5% inorganic oxygen acid, 5% hydrochloric acid, 0.3% acidic additive, and the rest water to remove the surface complex and obtain a chromium mask layer with smooth pattern lines;
[0046] (6) Electroplating 2.5 μm copper on the seed layer Au and removing the photoresist;
[0047] (7) A high-concentration mixed solution of 45% inorganic oxygen-containing acid, 7% hydrochloric acid, 0.3% acidic additive, and the rest water is used to etch the entire surface of chromium for 25 seconds to remove the chromium mask layer and obtain a smooth and clean metal surface.
[0048] Example 2
[0049] Embodiment 2 discloses a process for patterning a high-flatness chromium protective layer, comprising the following steps:
[0050] (1) preparing a Si wafer and performing wet cleaning using a 1% BOE solution, wherein the substrate material is a P-type medium-resistance silicon; sputtering a 100 nm Ti adhesion layer and a 120 nm Au seed layer on the Si substrate wafer in sequence as the bottom metal;
[0051] (2) evaporating a 50 nm Cr metal layer on the seed layer metal as a barrier layer to form a composite metal film structure;
[0052] (3) Spin-coating a negative photoresist on the metal chromium of the composite metal film structure, exposing and developing the photoresist to form a pattern mask protection, and performing a post-baking treatment at 80° C. for 30 min;
[0053] (4) using the negative photoresist after photolithography as a protective layer, using a medium-concentration mixed solution of 27% inorganic oxygen acid, 6% hydrochloric acid, 0.3% acidic additive, and the rest water to pattern pre-etch the chromium for 11 seconds to remove the surface passivation layer and roughen the chromium protective layer;
[0054] (5) using the negative photoresist after photolithography as a protective layer, a low-concentration mixed solution of 6% inorganic oxygen acid, 5% hydrochloric acid, 0.2% acidic additive, and the rest water is used to perform a secondary etching on the chromium for 6 seconds to remove the surface complex and obtain a chromium mask layer with smooth pattern lines;
[0055] (6) Electroplating 2.5 μm of gold on the seed layer Au and removing the photoresist;
[0056] (7) A high-concentration mixed solution of 48% inorganic oxygen-containing acid, 8% hydrochloric acid, 0.4% acidic additive, and the rest water is used to etch the entire surface of chromium for 25 seconds to remove the chromium mask layer and obtain a smooth and clean metal surface.
[0057] Example 3
[0058] Example 3 discloses a process for patterning a high-flatness chromium protective layer, comprising the following steps:
[0059] (1) preparing a Si substrate wafer and performing wet cleaning using a 1% BOE solution, wherein the substrate material is P-type medium-resistance silicon; sputtering a 150 nm Ti adhesion layer and a 150 nm Au seed layer on the Si substrate wafer in sequence as the bottom metal;
[0060] (2) Evaporating an 80 nm Cr metal layer on the seed layer metal as a barrier layer to form a composite metal film structure;
[0061] (3) Spin-coating a negative photoresist on the metal chromium of the composite metal film structure, exposing and developing the photoresist to form a pattern mask protection, and performing a post-baking treatment at 120° C. for 20 min;
[0062] (4) Using the negative photoresist after photolithography as a protective layer, a medium-concentration mixed solution with a ratio of 28% inorganic oxygen acid, 6% hydrochloric acid, 0.5% acidic additive, and the rest water is used to perform patterned pre-etching of chromium for 11 seconds to remove the surface passivation layer and roughen the chromium protective layer.
[0063] (5) Using the negative photoresist after photolithography as a protective layer, a low-concentration mixed solution of 7% inorganic oxygen acid, 5% hydrochloric acid, 0.4% acidic additive, and the rest water is used to perform a secondary etching on chromium for 7 seconds to remove the surface complex and obtain a chromium mask layer with smooth pattern lines.
[0064] (6) Electroplating 2 μm copper on the seed layer Au and removing the photoresist;
[0065] (7) Use a medium-concentration mixed solution with a ratio of 47% inorganic oxygen acid, 7% hydrochloric acid, 0.5% acid additive, and the rest water to etch the entire surface of chromium for 30 seconds to remove the chromium mask layer to obtain a smooth and clean metal surface. Figure 2 As shown, the graphic lines are flat and smooth, and the seed layer morphology is smooth and clean.
[0066] Comparative Example 1
[0067] Comparative Example 1 discloses a graphical process method, comprising the following steps:
[0068] (1) preparing a substrate Si wafer and wet-cleaning it with a 1% BOE solution, wherein the substrate material is P-type medium-resistance silicon; sputtering a 150 nm Ti adhesion layer and a 150 nm Au seed layer on the Si substrate wafer in sequence as the bottom metal;
[0069] (2) Evaporating an 80 nm Cr metal layer on the seed layer metal as a barrier layer to form a composite metal film structure;
[0070] (3) Spin-coating a negative photoresist on the metal chromium of the composite metal film structure, exposing and developing the photoresist to form a pattern mask protection, and performing a post-baking treatment at 120° C. for 20 min;
[0071] (4) using the negative photoresist after photolithography as a protective layer, using a low-concentration mixed solution of 7% inorganic oxygen acid, 5% hydrochloric acid, 0.4% acidic additive, and the rest water to pattern pre-etch chromium for 11 seconds;
[0072] (5) Using the negative photoresist after photolithography as a protective layer, a low-concentration mixed solution of 7% inorganic oxygen acid, 5% hydrochloric acid, 0.4% acidic additive, and the rest water was used to perform a secondary etching of chromium for 7 seconds, leaving a large number of complexes and aggregates on the edges and lines of the pattern;
[0073] (6) Electroplating 2 μm of gold on the seed layer Au and removing the photoresist;
[0074] (7) The entire surface is etched for 30 seconds using a low-concentration mixed solution of 7% inorganic oxygen acid, 5% hydrochloric acid, 0.4% acidic additive, and the rest water. A large amount of complex remains in the thin line width area, and metal remains locally in the large pattern area.
[0075] like Figure 3 As shown, it can be seen that there are granular complex residues and aggregations at the edge of the pattern, which are concentrated in the thin line width area and dispersed in the large line width area. The effect of comparative example 1 is not as good as that of example 1, example 2 and example 3 of the present invention.
[0076] Comparative Example 2
[0077] Comparative Example 2 discloses a graphical process method, comprising the following steps:
[0078] (1) preparing a Si substrate wafer and performing wet cleaning using a 1% BOE solution, wherein the substrate material is P-type medium-resistance silicon; sputtering a 150 nm Ti adhesion layer and a 150 nm Au seed layer on the Si substrate wafer in sequence as the bottom metal;
[0079] (2) Evaporating an 80 nm Cr metal layer on the seed layer metal as a barrier layer to form a composite metal film structure;
[0080] (3) Spin-coating a negative photoresist on the metal chromium of the composite metal film structure, exposing and developing the photoresist to form a pattern mask protection, and performing a post-baking treatment at 120° C. for 20 min;
[0081] (4) using the negative photoresist after photolithography as a protective layer, using a medium-concentration mixed solution of 28% inorganic oxygen acid, 6% hydrochloric acid, 0.5% acidic additive, and the rest water to pattern pre-etch the chromium for 10 seconds to remove the surface passivation layer and roughen the chromium protective layer;
[0082] (5) Using the negative photoresist after photolithography as a protective layer, a medium-concentration mixed solution with a ratio of 28% inorganic oxygen acid, 6% hydrochloric acid, 0.5% acidic additive, and the rest water was used to perform a secondary etching of chromium for 10 seconds. The edge of the pattern slightly expanded outward, and local over-etching occurred. The pattern with a line width of less than 5um was severely over-etched, and the pattern with a line width of more than 5um was slightly over-etched;
[0083] (6) Electroplate 2 μm of gold on the seed layer Au and remove the photoresist.
[0084] (7) A medium-concentration mixed solution with a ratio of 28% inorganic oxygen acid, 6% hydrochloric acid, 0.5% acidic additive, and the rest water was used to etch the entire surface for 30 seconds. Most of the mask layer can be basically removed, and local metal residues in the thin line width area. The effect of comparative example 2 is not as good as that of example 1, example 2, and example 3 of the present invention.
[0085] Comparative Example 3
[0086] Comparative Example 3 discloses a graphical process method, comprising the following steps:
[0087] (1) preparing a Si substrate wafer and performing wet cleaning using a 1% BOE solution, wherein the substrate material is P-type medium-resistance silicon; sputtering a 150 nm Ti adhesion layer and a 150 nm Au seed layer on the Si substrate wafer in sequence as the bottom metal;
[0088] (2) Evaporating an 80 nm Cr metal layer on the seed layer metal as a barrier layer to form a composite metal film structure;
[0089] (3) Spin-coating a negative photoresist on the metal chromium of the composite metal film structure, exposing and developing the photoresist to form a pattern mask protection, and performing a post-baking treatment at 120° C. for 20 min;
[0090] (4) Using the negative photoresist after photolithography as a protective layer, a high-concentration mixed solution with a ratio of 50% inorganic oxygen acid, 7% hydrochloric acid, 0.5% acidic additive, and the rest water is used to perform patterning pre-etching on chromium for 10 seconds.
[0091] (5) The negative photoresist after photolithography was used as a protective layer, and a high-concentration mixed solution with a ratio of 50% inorganic oxygen acid, 7% hydrochloric acid, 0.5% acidic additive, and the rest water was used to perform a secondary etching on chromium for 10 seconds. Severe side etching occurred in the patterned area, and the high-concentration solution caused overall drilling. The fine line width area of the pattern less than 5um was over-etched, and the area with a width greater than 5um was over-etched as a whole. The line width dimensions were all beyond the tolerance range.
[0092] (6) Electroplate 2 μm of gold on the seed layer Au and remove the photoresist.
[0093] (7) A high-concentration mixed solution with a ratio of 50% inorganic oxygen acid, 7% hydrochloric acid, 0.5% acidic additive, and the rest water was used to etch the entire surface for 30 seconds. The entire surface was etched normally and the mask layer was completely removed. The effect of Comparative Example 3 is not as good as that of Examples 1, 2, and 3 of the present invention.
[0094] The above-described multiple embodiments are convenient for those skilled in the art to better understand various aspects of the present invention. Those skilled in the art should be aware that they can easily use the present invention for performing the same purpose and / or other processes and structures that achieve the same advantages as the embodiments introduced herein, and those skilled in the art should also be aware that such equivalence does not deviate from the spirit and scope of the present invention, and they can make various changes, substitutions and modifications without deviating from the spirit and scope of the present invention.
Claims
1. A process for patterning a high-flatness chromium protective layer, characterized in that: The steps include: (1) preparing a substrate wafer and wet cleaning it, and sputtering an adhesion layer and a seed layer on the substrate wafer in sequence as a bottom metal; (2) evaporating or sputtering metal chromium on the seed layer as a barrier layer to form a composite metal film structure; (3) Spin-coating a photoresist on the composite metal film structure, exposing and developing the film, and performing a post-baking treatment; (4) pre-etching the chromium using a medium concentration wet mixed solution to remove the surface passivation layer and roughen the chromium protective layer; (5) secondary etching using a low-concentration wet mixed solution to remove the complex and obtain a chromium mask layer with smooth pattern lines; (6) electroplating a metal layer on the seed layer and removing the photoresist; (7) Use a high-concentration wet mixed solution to etch the entire surface to remove the chromium mask layer and obtain the desired metal surface.
2. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The medium concentration wet mixed solution in step (4) is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 25% to 30%, the proportion of hydrochloric acid is 5% to 10%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the patterning etching time is 10-15s.
3. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The low-concentration wet mixed solution in step (5) is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 5% to 10%, the proportion of hydrochloric acid is 3% to 5%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the secondary etching time is 5 to 10 seconds.
4. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The electroplated metal layer in step (6) is one of metals Au and Cu, and the thickness of the electroplated metal layer is 1.5 to 3.5 um.
5. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The high-concentration wet mixed solution in step (7) is a mixed solution of inorganic oxygen-containing acids, wherein the proportion of inorganic hydrochloric acid is 45% to 55%, the proportion of hydrochloric acid is 5% to 10%, the proportion of acidic additives is 0.1 to 0.6%, and the rest is pure water; the whole surface etching time is 25 to 35 seconds.
6. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The adhesion layer in step (1) is one or more of metals selected from Ti, TiW, W, and Ta, and the thickness of the adhesion layer is 100 nm to 300 nm.
7. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The seed layer in step (1) is one or more of the metals Au, Cu, and Al, and the thickness of the seed layer is 100 nm to 300 nm.
8. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The thickness of the barrier layer in step (2) is 30 nm to 100 nm.
9. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The photoresist in step (3) is a negative photoresist.
10. The process for patterning a high-flatness chromium protective layer according to claim 1, characterized in that: The post-baking temperature in step (3) is 80°C to 120°C.
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