Laser array and laser radar

Abstract

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

Description

Technical Field

[0001] The present application relates to the field of optical perception technology, and in particular to a laser array and a laser radar. Background Art

[0002] At present, automatic control equipment is developing rapidly, including driverless cars, sweeping robots, etc. Among them, the automatic control equipment specifically senses the surrounding environment of the automatic control equipment through the perception system installed therein, and then makes the next control action according to the surrounding environment. Lidar (light detection and ranging, LIDAR) is a kind of perception system. Lidar is used to output the transmitted laser. After the transmitted laser is transmitted to the obstacle, it will reflect and form a reflected laser. Lidar receives the reflected laser and determines the location information of the obstacle based on the transmitted laser and the reflected laser.

[0003] Existing laser radars usually include a laser array, which is specifically used to output a transmitted laser. Among them, the laser array includes one or more lasers, and multiple lasers are connected in parallel. When the number of lasers included in the laser array is large, the differential resistance of the laser array is small, and the optical power of the transmitted laser output by the laser array is large, but the optical power of the transmitted laser output by the laser array is not adjustable. In other scenarios, the laser array only needs to include a small number of lasers that output a small optical power of the transmitted laser. Since the number of lasers included in the laser array is reduced, the differential resistance of the laser array will increase, and it is difficult to reduce the differential resistance. Summary of the invention

[0004] The embodiments of the present application provide a laser array and a laser radar, wherein the differential resistance of the laser array is adjustable and the optical power of the outputted laser is adjustable.

[0005] In a first aspect, a laser array is provided, the laser array comprising a first laser and a second laser; the first laser comprises a first reflection layer, a first active layer and a second reflection layer sequentially arranged along an epitaxial direction, and a first oxidation hole is arranged in the second reflection layer; the second laser comprises a third reflection layer, a second active layer and a fourth reflection layer sequentially arranged along an epitaxial direction, and a second oxidation hole is arranged in the fourth reflection layer, and a light blocking layer is further arranged on a side of the fourth reflection layer away from the second active layer, and a projection of the light blocking layer on the second active layer overlaps with a projection of the second oxidation hole on the second active layer; the first laser is electrically connected to the second laser. In the laser array, the first laser comprises a first reflection layer, a first active layer and a second reflection layer sequentially arranged along an epitaxial direction, and a first oxidation hole is arranged in the second reflection layer, and when the laser array receives a voltage or a current, the voltage or the current is transmitted to the first laser, so that the first laser is powered on, so that the first active layer of the first laser generates a first photon, and the first photon oscillates in a resonant cavity formed by the first reflection layer and the second reflection layer, thereby generating a first laser and outputting through the first oxidation hole. The second laser includes a third reflective layer, a second active layer, and a fourth reflective layer sequentially arranged along the epitaxial direction, a second oxide hole is arranged in the fourth reflective layer, and a light blocking layer is also arranged on the side of the fourth reflective layer away from the second active layer, and the projection of the light blocking layer on the second active layer overlaps with the projection of the second oxide hole on the second active layer. When the laser array receives a voltage or a current, the voltage or the current can be transmitted to the second laser, so that the second laser is powered on, so that the second active layer of the second laser generates a second photon, and the second photon oscillates in the resonant cavity formed by the third reflective layer and the fourth reflective layer, thereby generating a second laser, and the second laser is transmitted to the light blocking layer through the second oxide hole, and the light blocking layer blocks the output of the second laser or the light blocking layer outputs part of the second laser. Among them, the emission laser output by the laser array is specifically the first laser and the second laser. When the first laser is connected in parallel with the second laser and the laser array receives a constant voltage, the differential resistance of the first laser and the second laser in parallel is lower than the differential resistance of the first laser; when the first laser is connected in parallel with the second laser and the laser array receives a constant current, the optical power of the emitted laser output by the laser array will change; when the first laser is connected in series with the second laser and the laser array receives a constant voltage, the optical power of the emitted laser output by the laser array will change. In other words, when the second laser is included in the laser array, the differential resistance of the laser array is adjustable, and the optical power of the emitted laser output is adjustable.

[0006] Optionally, the laser array includes multiple first lasers and at least one second laser; the multiple first lasers are connected in parallel; at least one first laser is electrically connected to any second laser. In this optional manner, the laser array may specifically include M first lasers and N second lasers, M is a positive integer greater than or equal to 2, N is a positive integer greater than or equal to 1, and the M first lasers are connected in parallel, the N second lasers are connected in parallel, and the first laser is connected in parallel with the second laser. Assume that the differential resistance of the first laser and the second laser is approximately equal, denoted as R s , then when the laser array receives a fixed voltage, the differential resistance of the laser array is R = R s / (M+N), it can be seen that when the number of second lasers increases, the differential resistance of the laser array will decrease. The differential resistance of the laser array can be adjusted by adjusting the number of second lasers.

[0007] Optionally, the laser array includes one or more first regions; the first region includes a second laser; at least one first laser is connected in parallel with the second laser in the first region; the second lasers in any two first regions are electrically isolated, and the second lasers in any two first regions are connected in parallel. In this optional method, it is assumed that the laser array includes M first lasers and X first regions, and one first region includes Y second lasers, X is a positive integer greater than or equal to 1, and Y is a positive integer greater than or equal to 1. Since at least one first laser is connected in parallel with the second laser in the first region, when the laser array receives a fixed voltage and all lasers are working, the optical power of the lasers output by the multiple first lasers does not change. And the differential resistance R of the laser array is R = R s / (M+X×Y), it can be seen that when X increases and / or Y increases, the differential resistance of the laser array will decrease; when X decreases and / or Y decreases, the differential resistance of the laser array will increase. 0 When all lasers are working, since multiple first lasers are connected in parallel, at least one first laser is connected in parallel with the second laser in the first region, and multiple second lasers are connected in parallel, the current flowing through the M first lasers is I=M×I 0 / (M+X×Y). According to the relationship between power and current, it can be known that ΔP=ΔI×SE, where SE is the slope efficiency, ΔI is the change in the current flowing through the M first lasers, and ΔP is the change in the optical power of the laser output by the M first lasers in parallel. It can be seen that when X increases and / or Y increases, the current I flowing through the M first lasers decreases, and the optical power of the laser output by the M first lasers in the laser array will decrease; when X decreases and / or Y decreases, the current I flowing through the M first lasers increases, and the optical power of the laser output by the M first lasers in the laser array will increase.

[0008] Optionally, the laser array includes one or more first regions; the first region includes a second laser; at least one first laser is connected in series with the second laser in the first region; the second lasers in any two first regions are electrically isolated, and the second lasers in any two first regions are connected in parallel. In this optional method, it is assumed that the laser array includes M first lasers and X first regions, and one first region includes Y second lasers, X is a positive integer greater than or equal to 1, and Y is a positive integer greater than or equal to 1. The differential resistance of the first laser and the second laser is approximately equal to R s , and the laser array receives a fixed current, and when all lasers are working, since the first laser is connected in series with the second laser in the first area, multiple first lasers are connected in parallel, and any two second lasers in the first area are connected in parallel, the optical power of the laser output by the first laser does not change, and the differential resistance R of the laser array is R s / M+R s / (X×Y), it can be seen that when X increases and / or Y increases, the differential resistance of the laser array will decrease; when X decreases and / or Y decreases, the differential resistance of the laser array will increase. 0 When all lasers are working, since the first laser is connected in series with the second laser in the first region, multiple first lasers are connected in parallel, and any two second lasers in the first region are connected in parallel, the voltage V allocated to the M first lasers is (X×Y)×V 0 / (M+X×Y). According to the relationship between voltage and current, ΔV=ΔI*R s / M, where ΔV is the change in voltage distributed to the M first lasers connected in parallel, and ΔI is the change in current flowing through the M first lasers. For ΔV=ΔI*R s Dividing the left and right sides of the equal sign of / M and ΔP=ΔI×SE respectively, we can get ΔP=ΔV×SE×M / R s It can be seen that when X increases and / or Y increases, the optical power of the laser output by the M first lasers in the laser array will increase; when X decreases and / or Y decreases, the optical power of the emitted laser output by the M first lasers in the laser array will decrease.

[0009] Optionally, the laser array further includes a second region; the second region includes a plurality of first lasers; and the first lasers in the second region are electrically isolated from the second lasers in any one of the first regions.

[0010] Optionally, the second region is further provided with one or more second lasers, and the first laser and the second laser in the second region are connected in parallel.

[0011] Optionally, the first region includes a plurality of second lasers, and the plurality of second lasers are connected in parallel.

[0012] Optionally, the laser array is adapted to receive a fixed voltage.

[0013] Optionally, the laser array is operable to receive a fixed current.

[0014] Optionally, the first laser further includes a first substrate disposed on a side of the first reflective layer away from the first active layer, a first negative electrode disposed on a side of the first substrate away from the first active layer, and a first positive electrode disposed on a side of the second reflective layer away from the first active layer; or, the first laser further includes a first substrate disposed on a side of the first reflective layer away from the first active layer, a first conductive layer disposed between the first substrate and the first reflective layer, a first negative electrode in contact with the first conductive layer, and a first positive electrode disposed on a side of the second reflective layer away from the first active layer.

[0015] Optionally, the second laser further includes a second substrate disposed on a side of the third reflective layer away from the second active layer, a second negative electrode disposed on a side of the second substrate away from the second active layer, and a second positive electrode disposed on a side of the fourth reflective layer away from the second active layer; or, the second laser further includes a second substrate disposed on a side of the third reflective layer away from the second active layer, a second conductive layer disposed between the second substrate and the third reflective layer, a second negative electrode in contact with the second conductive layer, and a second positive electrode disposed on a side of the fourth reflective layer away from the second active layer.

[0016] In a second aspect, a laser radar is provided, comprising a driving device and a laser array as described in any one of the first aspects above; the driving device is used to input a fixed voltage or a fixed current to the laser array.

[0017] Optionally, the laser array includes one or more first areas; a driving device, used to receive an input signal, and control the input of a fixed voltage or a fixed current to the n first areas according to the input signal, the input signal is an input signal received by the laser radar, and n is an integer greater than or equal to 0.

[0018] Optionally, the laser array includes one or more first regions; a driving device, used to receive a feedback signal, and control the input of a fixed voltage or a fixed current to the n first regions according to the feedback signal, where n is an integer greater than or equal to 0.

[0019] Optionally, the laser radar also includes a receiving device and a signal processing device; the receiving device is used to receive reflected laser, generate a receiving signal, and transmit the receiving signal to the signal processing device; the emitted laser is reflected after encountering an obstacle to form reflected laser; the signal processing device is used to generate the feedback signal according to the receiving signal.

[0020] Optionally, the signal processing device is also used to determine the distance between the obstacle and the laser radar based on the received signal.

[0021] Among them, the technical effects brought about by any possible implementation method of the second aspect can refer to the technical effects brought about by different implementation methods of the above-mentioned first aspect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of the structure of a laser radar provided in an embodiment of the present application;

[0023] Figure 2 A schematic diagram of the structure of a laser array provided in an embodiment of the present application;

[0024] Figure 3 A schematic diagram showing how the optical power of reflected laser light received by a receiving device provided in an embodiment of the present application varies with the distance between an obstacle and a laser radar;

[0025] Figure 4 A schematic diagram of the structure of a laser array provided in another embodiment of the present application;

[0026] Figure 5 A schematic diagram of driving electrical pulses for driving different numbers of vertical cavity surface emitting lasers to output laser light provided in an embodiment of the present application;

[0027] Figure 6 A schematic diagram of the structure of a laser array provided in yet another embodiment of the present application;

[0028] Figure 7 A schematic structural diagram of a first laser in a laser array provided in yet another embodiment of the present application;

[0029] Figure 8 A schematic structural diagram of a second laser in a laser array provided in another embodiment of the present application;

[0030] Fig. 9 A schematic diagram of the structure of a laser array provided in yet another embodiment of the present application;

[0031] Fig.10 for Fig. 9 Section along AA' Figure 1 ;

[0032] Fig.11 for Fig. 9 Section along AA' Figure 2 ;

[0033] Fig.12 A schematic diagram of the structure of a laser array provided in yet another embodiment of the present application;

[0034] Fig.13 for Fig.12 Section along BB';

[0035] Fig.14 for Fig.12 Section along CC' Figure 1 ;

[0036] Fig.15 A schematic diagram of the structure of a laser array provided in another embodiment of the present application;

[0037] Fig.16 A schematic diagram of the structure of a laser array provided in yet another embodiment of the present application;

[0038] Fig.17 for Fig.16 Section along DD';

[0039] Fig.18 for Fig.16 Section along EE' Figure 1 ;

[0040] Fig.19 A schematic structural diagram of a laser array provided in yet another embodiment of the present application. DETAILED DESCRIPTION

[0041] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments.

[0042] Unless otherwise defined, all scientific and technological terms used herein have the same meaning as those known to those of ordinary skill in the art. In the embodiments of the present application, "at least one" refers to one or more, and "multiple" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist, for example, A and / or B, which may represent: A exists alone, A and B exist at the same time, and B exists alone, wherein A and B may be singular or plural. The character " / " generally indicates that the associated objects before and after are a kind of "or" relationship. "At least one of the following (individuals)" or its similar expressions refers to any combination of these items, including any combination of single items (individuals) or plural items (individuals). For example, at least one of a, b or c (individuals) may represent: a, b, c, a and b, a and c, b and c or a, b and c, wherein a, b and c may be single or multiple. In addition, in the embodiments of the present application, the words "first", "second" and the like do not limit the quantity and order.

[0043] In addition, in the embodiments of the present application, directional terms such as "upper" and "lower" are defined relative to the orientation of the components in the drawings. It should be understood that these directional terms are relative concepts. They are used for relative description and clarification, and they may change accordingly according to changes in the orientation of the components in the drawings.

[0044] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0045] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0046] At present, automatic control equipment is developing rapidly. Automatic control equipment includes driverless cars, sweeping robots, etc. Among them, automatic control equipment specifically senses the surrounding environment of the automatic control equipment through the perception system installed in it, and then makes the next control action according to the surrounding environment. Lidar (light detection and ranging, LIDAR) is a kind of perception system.

[0047] For example, lidar can be used as vehicle-mounted lidar, airborne lidar, etc. installed in driverless cars, wherein the lidar is used to detect the distance between the driverless car and the surrounding objects (obstacles) of the driverless car, and the driverless car performs control actions such as braking to avoid risks and turning according to the distance measured by the lidar.

[0048] In addition, the laser radar can also be installed in a sweeping robot, where the laser radar is used to detect the distance between the sweeping robot and the furniture (obstacles) around the sweeping robot. The sweeping robot performs control actions such as turning and decelerating according to the distance measured by the laser radar.

[0049] Reference Figure 1 As shown, an embodiment of the present application provides a structural schematic diagram of a laser radar 10, which includes a laser array 11 and a driving device 12. The driving device 12 is used to drive the laser array 11 to output an emitted laser. The emitted laser will be transmitted to an obstacle. The obstacle can be any object around the laser radar 10. The emitted laser will be reflected after being transmitted to the surface of the obstacle to form a reflected laser. The laser radar 10 receives the reflected laser and determines the distance L between the laser radar 10 and the obstacle based on the emitted laser and the reflected laser.

[0050] For example, Figure 1 The laser radar 10 shown also includes a signal processing device 13 and a receiving device 14. Specifically, the receiving device 14 receives the reflected laser, generates a receiving signal according to the reflected laser, and transmits the receiving signal to the signal processing device 13. The signal processing device 13 is used to determine the distance L between the laser radar 10 and the obstacle according to the receiving signal. The signal processing device 13 can determine the distance L between the laser radar 10 and the obstacle based on the principle of pulse time-of-flight (TOF), or determine the distance L between the laser radar 10 and the obstacle based on the principle of frequency modulated continuous waveform (FMCW) coherence.

[0051] Exemplarily, when the signal processing device 13 determines the distance between the laser radar 10 and the obstacle based on the TOF principle, the signal processing device 13 receives the time when the laser array 11 outputs the emitted laser, and the receiving signal transmitted by the receiving device 14 to the signal processing device 13 includes the time when the receiving device 14 receives the reflected laser. Since the speed of light is fixed and known, the signal processing device 13 can determine the distance L between the laser radar 10 and the obstacle based on the difference between the time when the emitted laser is output and the time when the reflected laser is received.

[0052] Exemplarily, the driving device 12 often drives the laser array 11 to continuously output multiple emission lasers. For example, two adjacent emission lasers among the multiple emission lasers output by the laser array 11 are emission laser s1 and emission laser s2, wherein the laser array 11 outputs emission laser s1 at a first moment, and the receiving device 14 receives the reflected laser s1' formed by the emission laser s1 being transmitted to the obstacle and then reflected. Subsequently, the laser array 11 outputs emission laser s2 at a second moment after the first moment, and the receiving device 14 receives the reflected laser s2' formed by the emission laser s2 being transmitted to the obstacle and then reflected… When the laser array 11 continuously outputs several to tens of thousands of emission lasers in the same direction within one second, the receiving device 14 will receive several to tens of thousands of reflected lasers. In this way, the laser radar 10 can determine the distance between the obstacle and the laser radar 10 at different moments, and further determine the speed parameter of the obstacle. For example, when the laser array 11 continuously outputs several to tens of thousands of transmission light beams in different directions within one second, the receiving device 14 will receive several to tens of thousands of reflected lasers. In this way, the laser radar 10 can determine the distances between different positions of the obstacle and the laser radar 10, and then determine the physical model of the obstacle.

[0053] Exemplarily, the existing laser array 11 generally includes a vertical-cavity surface-emitting laser (VCSEL). Compared with the edge-emitting laser (EEL), the vertical-cavity surface-emitting laser has the advantages of low cost, small divergence angle of the outputted emitted laser, low threshold current, simple packaging process, and easy realization of a two-dimensional integrated surface light source. However, the optical power of the emitted laser output by a vertical-cavity surface-emitting laser is limited, so in the existing laser array 11, multiple vertical-cavity surface-emitting lasers are often connected in parallel to increase the optical power of the emitted laser output by the laser array 11.

[0054] Among them, when the number of vertical cavity surface emitting lasers included in the laser array 11 is determined and the voltage or current received by the laser array 11 does not change, the optical power of the emitted laser output by the laser array 11 will also be fixed, and the optical power of the emitted laser output by the laser array 11 is not adjustable. When the distance between the obstacle and the laser radar 10 is far, the laser array 11 is required to output an emitted laser with a larger optical power, so that the optical power of the reflected laser received by the receiving device 14 is not less than the minimum optical power that the receiving device 14 can receive, so that the receiving device 14 can generate a receiving signal based on the reflected laser. When the distance between the obstacle and the laser radar 10 is close, if the optical power of the emitted laser output by the laser array 11 is still very large, the optical power of the reflected laser received by the receiving device 14 may be greater than the maximum optical power that the receiving device 14 can receive, causing the reflected laser received by the receiving device 14 to be saturated, thereby causing the received signal generated by the receiving device 14 to be distorted.

[0055] For example, in order to change the optical power of the emitted laser light output by the laser array 11, the existing laser array 10 generally includes two different partitions, one partition outputting an emitted laser light with a larger optical power, and the other partition outputting an emitted laser light with a smaller optical power. Figure 2 As shown, Figure 2A structural schematic diagram of a laser array 11 is provided for an embodiment of the present application. The laser array 11 includes a partition A1 and a partition A2, wherein the partition A1 includes 20 parallel vertical cavity surface emitting lasers, the partition A2 includes 10 parallel vertical cavity surface emitting lasers, and the vertical cavity surface emitting lasers in the partition A2 are electrically isolated from the vertical cavity surface emitting lasers in the partition A1. When the distance between the obstacle and the laser radar 10 is far, the 20 parallel vertical cavity surface emitting lasers in the partition A1 are selected to output the emitting laser with larger optical power; when the distance between the obstacle and the laser radar 10 is close, the 10 parallel vertical cavity surface emitting lasers in the partition A2 are selected to output the emitting laser with smaller optical power.

[0056] Reference Figure 3 As shown, Figure 3 A schematic diagram of the optical power of the reflected laser received by the receiving device 14 according to the embodiment of the present application as the distance between the obstacle and the laser radar 10 changes, wherein: Figure 3 The horizontal axis in represents the distance between the obstacle and the laser radar 10, in meters (m). Figure 3 The vertical axis in represents the optical power of the reflected laser light received by the receiving device 14, in milliwatts (mW). Figure 3 In the embodiment, the maximum optical power that the receiving device 14 can receive is 1400mW, and the minimum optical power that the receiving device 14 can receive is 80mW. Figure 3 As shown, when the distance between the obstacle and the laser radar 10 is less than 3m, 10 parallel vertical cavity surface emitting lasers in partition A2 are selected to output the emitted laser. At this time, the optical power of the reflected laser received by the receiving device 14 decreases as the distance between the obstacle and the laser radar 10 increases, and the maximum optical power of the reflected laser received by the receiving device 14 is 1350mW, and the minimum optical power of the reflected laser received by the receiving device 14 is 200mW. When the distance between the obstacle and the laser radar 10 is greater than or equal to 3m, 20 parallel vertical cavity surface emitting lasers in partition A1 are selected to output the emitted laser. At this time, the optical power of the reflected laser received by the receiving device 14 decreases as the distance between the obstacle and the laser radar 10 increases, and the maximum optical power of the reflected laser received by the receiving device 14 is 1380mW, and the minimum optical power of the reflected laser received by the receiving device 14 is 100mW.

[0057] In some embodiments, reference Figure 4 As shown, compared to Figure 2 The laser array 11 shown, Figure 4The laser array 11 shown also includes a partition A3, which includes 4 parallel vertical cavity surface emitting lasers. When the distance between the obstacle and the laser radar 10 is greater than or equal to 4m, the 20 parallel vertical cavity surface emitting lasers in the partition A1 are selected to output the emitted laser; when the distance between the obstacle and the laser radar 10 is greater than or equal to 1m and less than 4m, the 10 parallel vertical cavity surface emitting lasers in the partition A2 are selected to output the emitted laser; when the distance between the obstacle and the laser radar 10 is less than 1m, the 4 parallel vertical cavity surface emitting lasers in the partition A3 are selected to output the emitted laser.

[0058] Exemplarily, the laser array 11 may include more partitions, and the number of vertical cavity surface emitting lasers included in each partition may be changed, so that the laser array 11 selects the vertical cavity surface emitting laser in any partition to output the emitting laser with a predetermined optical power according to the distance between the obstacle and the laser radar 10.

[0059] However, in Figure 2 or Figure 4 In the laser array 11 shown, different partitions have different positions. When the laser array 11 is required to emit laser light to a predetermined position, an optical system with different parameters is required to transmit the laser light emitted from different partitions to the predetermined position, thereby making the design of the laser array 11 unnecessarily complicated.

[0060] In particular, in the partition design scheme, for a partition including a small number of VCSELs, the reduction in the number of VCSELs will increase the differential resistance of the partition. When the differential resistance of the partition increases, the fall time of the driving electric pulse that drives the VCSEL of the partition to output the emitted laser will become longer, and the period of the driving electric pulse will become longer, thereby lengthening the period of the partition outputting multiple pulsed lasers, affecting the detection rate of the laser radar. Specifically, refer to Figure 5 As shown, Figure 5 A schematic diagram of driving electrical pulses for driving different numbers of vertical cavity surface emitting lasers to output laser light is provided in an embodiment of the present application. Figure 5 The horizontal axis represents time in microseconds (μs). Figure 5 The vertical axis in represents the current size of the driving electric pulse, in milliamperes (mA). Figure 5As shown, curve 1 represents the driving electric pulse for driving 14 vertical cavity surface emitting lasers to output laser emission in parallel. In curve 1, the falling time of the driving electric pulse (the time from the falling edge of the driving electric pulse to the current of the driving electric pulse decreasing to 0 mA) is t1; curve 2 represents the driving electric pulse for driving 9 vertical cavity surface emitting lasers to output laser emission in parallel. In curve 2, the falling time of the driving electric pulse is t2; curve 3 represents the driving electric pulse for driving 2 vertical cavity surface emitting lasers to output laser emission in parallel. In curve 3, the falling time of the driving electric pulse is t3. Figure 5 It can be seen that t3>t2>t1. When driving the vertical cavity surface emitting laser to output two emission lasers, the second driving electric pulse needs to appear after the current of the previous driving electric pulse decreases to 0mA. Therefore, Figure 5 It can be seen that when the number of VCSELs included in a region decreases, the differential resistance of the region will increase, the fall time of the driving electric pulse that drives the VCSELs in the region to output the emitted laser will become longer, and the cycle of the driving electric pulse will become longer, thereby making the VCSELs in the region output multiple emitted lasers with a longer cycle, which will ultimately affect the detection rate of the lidar.

[0061] Accordingly, an embodiment of the present application provides a laser array, the differential resistance of the laser array is adjustable, and the optical power of the outputted emitted laser is adjustable.

[0062] Reference Figure 6 As shown, Figure 6 A schematic diagram of the structure of a laser array 20 provided in an embodiment of the present application, Figure 6 (a) is a top view of the laser array 20, which includes a laser 21 (also referred to as a first laser) and a laser 22 (also referred to as a second laser).

[0063] Figure 6 (b) is a cross-sectional view of the laser 21 in the laser array 20; wherein the laser 21 includes a reflective layer 211 (also referred to as a first reflective layer), an active layer 212 (also referred to as a first active layer) and a reflective layer 213 (also referred to as a second reflective layer) sequentially arranged along the epitaxial direction (the z-axis direction in FIG. 20 ), and an oxidation hole 214 (also referred to as a first oxidation hole) is arranged in the reflective layer 213.

[0064] Exemplarily, the laser 21 is also called a semiconductor laser, specifically a vertical cavity surface emitting laser. Among them, the reflective layer 211 and the reflective layer 213 constitute the resonant cavity of the laser 21, and the active layer 212 constitutes the pump source of the laser 21. When the laser 21 is powered on (receives current or voltage), the active layer 212 generates photons, and the photons repeatedly oscillate in the resonant cavity formed by the reflective layer 211 and the reflective layer 213. The resonant cavity selects photons with a certain frequency and consistent direction for the highest priority amplification, and suppresses photons of other frequencies and directions, thereby generating laser light and outputting it through the oxidation hole 214. For example, after the active layer 212 generates photons, all photons that do not move along the axis of the resonant cavity (z-axis direction) will quickly escape from the resonant cavity and no longer contact the active layer 212; all photons that move along the axis of the resonant cavity will continue to move forward in the cavity, and will continuously pass through the active layer 212 through the reflection of the reflection layer 211 and the reflection layer 213 to generate stimulated radiation, and then form a strong light beam with the same propagation direction, frequency and phase in the resonant cavity, that is, laser, which is output through the oxidation hole 214 in the reflection layer 213. The oxidation hole 214 can limit the transverse mode of the laser output by the laser 21 and the transverse distribution of the current density, and the size of the oxidation hole 214 determines whether the laser 21 is in a multi-transverse mode state or a single transverse mode state. Exemplarily, the lateral distribution of current density is specifically the current density of the current within the range of the oxidation hole 214. When the size of the oxidation hole 214 is small, the laser 21 can reach the threshold condition for the active layer 212 to generate photons when the received current or voltage is small, that is, the threshold current or threshold voltage of the laser 21 is small. Among them, the differential resistance of the laser 21 is negatively correlated with the size of the oxidation hole 214. Therefore, when the size of the oxidation hole 214 is small, the differential resistance of the laser 21 is large and cannot be ignored. Among them, the threshold current or threshold voltage of the laser 21 needs to be small because when the current received by the laser 21 is less than the threshold current or the voltage received by the laser 21 is less than the threshold voltage, the laser 21 will convert the received current or voltage into Joule heat. When the threshold current or threshold voltage of the laser 21 is large, the Joule heat converted by the laser 21 will be large, and the large Joule heat will affect the performance of the laser 21.

[0065] like Figure 6As shown in (b), the reflective layer 211 and the reflective layer 213 are made of a semiconductor material with a relatively high reflectivity (for example, a reflectivity of 99.9%). In some embodiments, the reflective layer 211 is formed by alternately epitaxially growing a semiconductor material with a high refractive index and a semiconductor material with a low refractive index, and the reflective layer 213 is formed by alternately epitaxially growing a semiconductor material with a high refractive index and a semiconductor material with a low refractive index. The reflective layer 213 can provide holes, and the reflective layer 211 can provide electrons, or the reflective layer 213 can provide electrons, and the reflective layer 211 can provide holes. The reflective layer 211 and the reflective layer 213 are used to provide electrons and holes (collectively referred to as carriers), respectively. The active layer 212 can be made of a semiconductor material with a high optical gain, and the semiconductor material can be a quantum well (QW) so that carriers (for example, electrons and holes) are compounded in the active layer 212 to form photons and are emitted under the stimulation of current or voltage.

[0066] Among them, Figure 6 As shown in (b) in the figure, the laser 21 further comprises a substrate 215 (also referred to as a first substrate) disposed on a side of the reflective layer 211 away from the active layer 212, and the projection of the active layer 212 on the substrate 215 is within the projection range of the reflective layer 211 on the substrate 215, for example, the active layer 212 and the reflective layer 211 have the same size and shape, or the active layer 212 has a smaller size than the reflective layer 211. Specifically, the reflective layer 211 may be square, the active layer 212 may be circular, and the two layers may have the same central axis, or the reflective layer 211 and the active layer 212 may both be square and have exactly the same size and shape. Similarly, the projection of the reflective layer 213 on the substrate 215 is within the projection range of the reflective layer 211 on the substrate 215.

[0067] In one embodiment, Figure 6As shown in (b), the laser 21 further includes a negative electrode 216 (also referred to as a first negative electrode) disposed on the side of the substrate 215 away from the active layer 212, and a positive electrode 217 (also referred to as a first positive electrode) disposed on the side of the reflective layer 213 away from the active layer 212. When the laser 21 is powered on, the negative electrode 216 and the positive electrode 217 of the laser 21 receive a voltage or current to form a voltage difference, thereby causing the active layer 212 to generate photons. The projection of the positive electrode 217 on the substrate 215 does not overlap with the projection of the oxidation hole 214 on the substrate 215, and the substrate 215 is specifically a conductive substrate. In some embodiments, the oxidation hole 214 is specifically formed by forming an annular shallow trench isolation (STI) STI1, and oxide is grown inward from the inner wall of the annular STI1 to form an oxidation hole 214 of a predetermined size. STI1 may be a circular ring, thereby causing the oxidation hole to be circular, or STI1 may be a polygonal ring, thereby causing the oxidation hole to be polygonal. Among them, along the z-axis direction, STI1 penetrates the reflective layer 213 and the active layer 212, and contacts the reflective layer 211. Usually, after STI1 is formed in the laser 21 and the oxidation hole 214 is made, an insulating material is deposited in the STI1 and on the reflective layer 213 to form an insulating layer 218, and then the pattern of the positive electrode 217 is made on the insulating layer 218 by photolithography and etching processes, and then the positive electrode 217 is made, wherein the insulating layer 218 exists between the positive electrode 217 and the STI1, the positive electrode 217 contacts the reflective layer 213, and there is a part of the insulating layer 218 in the area surrounded by the positive electrode 217, and the projection of this part of the insulating layer 218 on the active layer 212 covers the projection of the oxidation hole 214 on the active layer 212.

[0068] In another embodiment, Figure 7As shown, the laser 21 further includes a conductive layer 210 (also referred to as a first conductive layer) disposed between the substrate 215 and the reflective layer 211, a negative electrode 216 in contact with the conductive layer 210, and a positive electrode 217 disposed on the side of the reflective layer 213 away from the active layer 212. When the laser 21 is powered on, the negative electrode 216 and the positive electrode 217 of the laser 21 receive a voltage or current to form a voltage difference, thereby causing the active layer 212 to generate photons. The projection of the positive electrode 217 on the substrate 215 does not overlap with the projection of the oxidation hole 214 on the substrate 215, and the substrate 215 is specifically an insulating substrate. In some embodiments, the oxidation hole 214 is specifically formed by forming an annular shallow trench isolation (STI) STI1, and an oxide is grown inward from the inner wall of the annular STI1 to form an oxidation hole 214 of a predetermined size. The STI1 may be a circular ring, so that the oxidation hole is circular, or the STI1 may be a polygonal ring, so that the oxidation hole is polygonal. In the z-axis direction, the STI1 penetrates the reflective layer 213 and the active layer 212, and contacts the reflective layer 211 (and Figure 6 21). In some examples, STI1 also penetrates the reflective layer 211 and contacts the conductive layer 210. Usually, after STI1 is formed in the laser 21 and the oxidation hole 214 is made, an insulating material is deposited in the STI1 and on the reflective layer 213 to form an insulating layer 218, and then a pattern of the positive electrode 217 is made on the insulating layer 218 by photolithography and etching processes, thereby making the positive electrode 217, wherein the insulating layer 218 exists between the positive electrode 217 and the STI1, the positive electrode 217 contacts the reflective layer 213, and a portion of the insulating layer 218 also exists in the area surrounded by the positive electrode 217, and the projection of this portion of the insulating layer 218 on the active layer 212 covers the projection of the oxidation hole 214 on the active layer 212.

[0069] For example, Figure 7 As shown, no matter STI1 penetrates the reflective layer 213 and the active layer 212, or STI1 penetrates the reflective layer 213, the active layer 212 and the reflective layer 211, Figure 7 The negative electrode 216 in the embodiment may or may not be in contact with the reflective layer 211. For example, an insulating layer may be provided between the reflective layer 211 and the negative electrode 216 so that the negative electrode 216 does not contact the reflective layer 211, or a predetermined spacing may be provided between the reflective layer 211 and the negative electrode 216 in the x-axis direction so that the negative electrode 216 does not contact the reflective layer 211.

[0070] Figure 6(c) is a cross-sectional view of the laser 22 in the laser array 20; wherein the laser 22 includes a reflective layer 221 (also called the third reflective layer), an active layer 222 (also called the second active layer) and a reflective layer 223 (also called the fourth reflective layer) arranged in sequence along the epitaxial direction (the z-axis direction in FIG. 20 ), an oxidation hole 224 (also called the second oxidation hole) is arranged in the reflective layer 223, and a light blocking layer 229 is also arranged on the side of the reflective layer 223 away from the active layer 222, and the projection of the light blocking layer 229 on the active layer 222 overlaps with the projection of the oxidation hole 224 on the active layer 222.

[0071] Exemplarily, the laser 22 is also called a semiconductor laser, specifically a vertical cavity surface emitting laser. Among them, the reflective layer 221 and the reflective layer 223 constitute the resonant cavity of the laser 22, and the active layer 222 constitutes the pump source of the laser 22. When the laser 22 is powered (receives current or voltage), the active layer 222 generates photons, and the photons repeatedly oscillate in the resonant cavity formed by the reflective layer 221 and the reflective layer 223. The resonant cavity selects photons with a certain frequency and consistent direction for the highest priority amplification, and suppresses photons of other frequencies and directions, thereby generating laser light and transmitting it to the light blocking layer 229 through the oxidation hole 224.

[0072] Reference Figure 6 As shown in (c), the projection of the light blocking layer 229 on the active layer 222 overlaps with the projection of the oxidized hole 224 on the active layer 222. The projection of the light blocking layer 229 on the active layer 222 may completely cover the projection of the oxidized hole 224 on the active layer 222, so that the laser generated by the laser 22 is blocked by the light blocking layer 229, and the laser 22 does not output laser light. Alternatively, the projection of the light blocking layer 229 on the active layer 222 covers the projection of part of the oxidized hole 224 on the active layer 222, so that part of the laser light output by the laser 22 is blocked by the light blocking layer 229. When the laser 22 and the laser 21 receive the same voltage, the optical power of the laser light output by the laser 22 is less than the optical power of the laser light output by the laser 22.

[0073] Exemplarily, the structure and function of the reflective layer 221 may refer to the structure and function of the reflective layer 211 , the structure and function of the active layer 222 may refer to the structure and function of the active layer 222 , and the structure and function of the reflective layer 223 may refer to the structure and function of the reflective layer 213 , which will not be described in detail here.

[0074] Among them, Figure 6As shown in (c) in FIG. 1 , the laser 22 further includes a substrate 225 (also referred to as a second substrate) disposed on a side of the reflective layer 221 away from the active layer 222. The projection of the active layer 222 on the substrate 225 is within the projection range of the reflective layer 221 on the substrate 225. For example, the active layer 222 and the reflective layer 221 have the same size and shape, or the active layer 222 has a smaller size than the reflective layer 221. Specifically, the reflective layer 221 may be square, the active layer 222 may be circular, and the two layers may have the same central axis, or the reflective layer 221 and the active layer 222 may both be square and have exactly the same size and shape. Similarly, the projection of the reflective layer 223 on the substrate 225 is within the projection range of the reflective layer 221 on the substrate 215.

[0075] In one embodiment, Figure 6 As shown in (c), the laser 22 also includes a negative electrode 226 (also referred to as a second negative electrode) disposed on the side of the substrate 225 away from the active layer 222, and a positive electrode 227 (also referred to as a second positive electrode) disposed on the side of the reflective layer 223 away from the active layer 222. When the laser 22 is powered on, the negative electrode 226 and the positive electrode 227 of the laser 22 receive a voltage or current to form a voltage difference, thereby causing the active layer 222 to generate photons. The projection of the positive electrode 227 on the substrate 225 does not overlap with the projection of the oxidation hole 224 on the substrate 225, and the substrate 225 is specifically a conductive substrate. In some embodiments, the oxidation hole 224 is specifically formed by forming a ring-shaped STI2, and oxide is grown inward from the inner wall of the ring-shaped STI2 to form an oxidation hole 224 of a predetermined size. The STI2 may be a circular ring, thereby causing the oxidation hole to be circular, or the STI2 may be a polygonal ring, thereby causing the oxidation hole to be polygonal. Among them, along the z-axis direction, STI2 penetrates the reflective layer 223 and the active layer 222, and contacts the reflective layer 221. Usually, after STI2 is formed in the laser 22 and the oxidation hole 224 is made, an insulating material is deposited in the STI2 and on the reflective layer 223 to form an insulating layer 228, and then a pattern of the positive electrode 227 is made on the insulating layer 228 by photolithography and etching processes, and then the positive electrode 227 is made, wherein the insulating layer 228 exists between the positive electrode 227 and the STI2, the positive electrode 227 contacts the reflective layer 223, and there is a part of the insulating layer 228 in the area surrounded by the positive electrode 227, and the projection of this part of the insulating layer 228 on the active layer 222 covers the projection of the oxidation hole 224 on the active layer 222.

[0076] In another embodiment, Figure 8As shown, the laser 22 further includes a conductive layer 220 (also referred to as a second conductive layer) disposed between the substrate 225 and the reflective layer 221, a negative electrode 226 in contact with the conductive layer 220, and a positive electrode 227 disposed on the side of the reflective layer 223 away from the active layer 222. The laser 22 is powered on by the negative electrode 226 and the positive electrode 227 of the laser 22 receiving a voltage or current to form a voltage difference, thereby causing the active layer 222 to generate photons. The projection of the positive electrode 227 on the substrate 225 does not overlap with the projection of the oxidation hole 224 on the substrate 225, and the substrate 225 is specifically an insulating substrate. In some embodiments, the oxidation hole 224 is specifically formed by forming an annular shallow trench isolation (STI) STI2, and an oxide is grown inward from the inner wall of the annular STI2 to form an oxidation hole 224 of a predetermined size. The STI2 may be a circular ring, so that the oxidation hole is circular, or the STI2 may be a polygonal ring, so that the oxidation hole is polygonal. In the z-axis direction, the STI2 penetrates the reflective layer 223 and the active layer 222, and contacts the reflective layer 221 (and Figure 6 2 (c)). In some examples, STI2 also penetrates the reflective layer 221 and contacts the conductive layer 220. Usually, after STI2 is formed in the laser 22 and the oxidation hole 224 is made, an insulating material is deposited in the STI2 and on the reflective layer 223 to form an insulating layer 228, and then a pattern of the positive electrode 227 is made on the insulating layer 228 by photolithography and etching processes, thereby making the positive electrode 227, wherein an insulating layer 228 exists between the positive electrode 227 and the STI2, the positive electrode 227 contacts the reflective layer 223, and a portion of the insulating layer 228 also exists in the area surrounded by the positive electrode 227, and the projection of this portion of the insulating layer 228 on the active layer 222 covers the projection of the oxidation hole 224 on the active layer 222.

[0077] For example, Figure 8 As shown, no matter STI2 penetrates the reflective layer 223 and the active layer 222, or STI2 penetrates the reflective layer 223, the active layer 222 and the reflective layer 221, Figure 8 The negative electrode 226 in the embodiment may or may not be in contact with the reflective layer 221. For example, an insulating layer may be provided between the reflective layer 221 and the negative electrode 226 so that the negative electrode 226 does not contact the reflective layer 221, or a predetermined spacing may be provided between the reflective layer 221 and the negative electrode 226 in the x-axis direction so that the negative electrode 226 does not contact the reflective layer 221.

[0078] In the laser array 20, the laser 21 includes a reflective layer 211, an active layer 212 and a reflective layer 213 which are arranged in sequence along the epitaxial direction. An oxidation hole 214 is provided in the reflective layer 213. When the laser array 20 receives a voltage or a current, the voltage or the current is transmitted to the laser 21, so that the laser 21 is powered on. Therefore, the active layer 212 of the laser 21 generates a first photon, and the first photon oscillates in the resonant cavity formed by the reflective layer 211 and the reflective layer 213, thereby generating a first laser and outputting it through the oxidation hole 214. The laser 22 includes a reflective layer 221, an active layer 222 and a reflective layer 223 which are sequentially arranged along the epitaxial direction. An oxidized hole 224 is arranged in the reflective layer 223. A light blocking layer 229 is also arranged on the side of the reflective layer 223 away from the active layer 222. The projection of the light blocking layer 229 on the active layer 222 overlaps with the projection of the oxidized hole 224 on the active layer 222. When the laser array 20 receives a voltage or a current, the voltage or the current can be transmitted to the laser 22, so that the laser 22 is powered on. Therefore, the active layer 222 of the laser 22 generates a second photon, and the second photon oscillates in the resonant cavity formed by the reflective layer 221 and the reflective layer 223, thereby generating a second laser. The second laser is transmitted to the light blocking layer 229 through the oxidized hole 224. The light blocking layer 229 blocks the output of the second laser or the light blocking layer 229 outputs part of the second laser. The emitted laser output by the laser array 20 is specifically the first laser and the second laser. When the laser 21 and the laser 22 are connected in parallel and the laser array 20 receives a constant voltage, the differential resistance of the laser 21 and the laser 22 in parallel is lower than the differential resistance of the laser 21; when the laser 21 and the laser 22 are connected in parallel and the laser array 20 receives a constant current, the optical power of the emitted laser output by the laser array 20 will change; when the laser 21 and the laser 22 are connected in series and the laser array 20 receives a constant voltage, the optical power of the emitted laser output by the laser array 20 will change. In other words, when the laser 22 is included in the laser array, the differential resistance of the laser array is adjustable, and the optical power of the emitted laser output is adjustable.

[0079] For example, refer to Fig. 9 , Fig.12 , Fig.15 , Fig.16 , Fig.19 As shown, the laser array 20 includes a plurality of lasers 21 and at least one laser 22 ; the plurality of lasers 21 are connected in parallel; and at least one laser 21 is electrically connected to any one of the lasers 22 .

[0080] Specifically, refer to Fig. 9 As shown, Fig. 9The laser array 20 shown includes a plurality of lasers 21 and at least one laser 22; the plurality of lasers 21 are connected in parallel; at least one laser 21 is specifically connected in parallel with any one of the lasers 22, and the plurality of lasers 22 are connected in parallel. Specifically, the plurality of lasers 21 include lasers 21a and lasers 21b, and the plurality of lasers 22 include lasers 22a and lasers 22b, wherein the lasers 21a and lasers 21b are connected in parallel, the lasers 22a and lasers 22b are connected in parallel, and the lasers 21b and lasers 22a are connected in parallel.

[0081] For example, Fig.10 for Fig. 9 The cross-section along AA', where Fig.10 The structure of the laser 21 shown is as follows Figure 6 As shown in (b), Fig.10 The structure of the laser 22 shown is as follows Figure 6 As shown in (c) in FIG. 1 . The laser 21a is connected in parallel with the laser 21b, the positive electrode 217 of the laser 21a is connected with the positive electrode 217 of the laser 21b, and the negative electrode 216 of the laser 21a is connected with the negative electrode 216 of the laser 21b; the laser 22a is connected in parallel with the laser 22b, specifically, the positive electrode 227 of the laser 22a is connected with the positive electrode 227 of the laser 22b, and the negative electrode 226 of the laser 22a is connected with the negative electrode 226 of the laser 22b; the laser 21b is connected in parallel with the laser 22a, specifically, the positive electrode 217 of the laser 21b is connected with the positive electrode 227 of the laser 22a, and the negative electrode 216 of the laser 21b is connected with the negative electrode 226 of the laser 22a.

[0082] like Fig.10 As shown, in the production Fig. 9The laser array 21 shown includes: a first step: sequentially epitaxially growing a high refractive index semiconductor material layer for providing electrons, a semiconductor material layer for high optical gain, and a high refractive index semiconductor material layer for providing holes on a substrate; a second step: using photolithography and etching processes on the high refractive index semiconductor material layer for providing holes, and using the high refractive index semiconductor material layer for providing electrons as an etching stop layer, to manufacture an annular STI1a, an annular STI1b, an annular STI2a, and an annular STI2b, wherein the area surrounded by STI1a is the laser 21a, the area surrounded by STI1b is the laser 21b, the area surrounded by STI2a is the laser 22a, and the area surrounded by STI2b is the laser 22b. Among them, the reflective layer 211 of laser 21a, the reflective layer 211 of laser 21b, the reflective layer 221 of laser 22a, and the reflective layer 221 of laser 22b are specifically high refractive index semiconductor material layers that provide electrons, the active layer 212 of laser 21a, the active layer 212 of laser 21b, the active layer 212 of laser 22a, and the active layer 212 of laser 22b are specifically high optical gain semiconductor material layers, and the reflective layer 213 of laser 21a, the reflective layer 213 of laser 21b, the reflective layer 223 of laser 22a, and the reflective layer 223 of laser 22b are specifically semiconductor material layers that provide holes.

[0083] Step 3: Grow oxide from the inner wall of STI. Specifically, grow oxide from the inner wall of the annular STI1a to form the oxide hole 214 of the laser 21a; grow oxide from the inner wall of the annular STI1b to form the oxide hole 214 of the laser 21b; grow oxide from the inner wall of the annular STI2a to form the oxide hole 224 of the laser 22a; grow oxide from the inner wall of the annular STI2b to form the oxide hole 224 of the laser 22b.

[0084] Step 4: Deposit insulating material into the STI and on the semiconductor material layer providing holes to form insulating layer 218 of laser 21a, insulating layer 218 of laser 21b, insulating layer 228 of laser 22a and insulating layer 228 of laser 22b.

[0085] Step 5: Deposit a conductive material on the high refractive index semiconductor material providing holes to make positive electrode 217 of laser 21a, positive electrode 217 of laser 21b, positive electrode 227 of laser 22a, positive electrode 227 of laser 22b, and all positive electrodes are connected to pin PAD1 of laser array 20; deposit a conductive material on the side of the substrate away from the high refractive index semiconductor material providing holes to make negative electrode 216 of laser 21a, negative electrode 216 of laser 21b, negative electrode 226 of laser 22a, negative electrode 226 of laser 22b, and all negative electrodes are connected to pin PAD2 of laser array 20. Exemplarily, Fig. 9 Specifically, it is a top view of the laser array 20. The lasers 21 and 22 in the laser array 20 are Fig.10 When the layer structure is arranged as shown, the negative electrode is at the bottom of the z-axis direction and the positive electrode is at the top of the z-axis direction, so Fig. 9 The top view shown would normally show pin PAD1 but not pin PAD2 because pin PAD2 is at the bottom. Fig. 9 The dotted box in the figure indicates the existence of pin PAD2.

[0086] Step 6: A light blocking layer 229 is formed on each laser 22 , and the projection of the light blocking layer 229 on the active layer 222 overlaps with the projection of the oxidation hole 224 on the active layer 222 .

[0087] For example, Fig.11 for Fig. 9 The cross-section along AA', where Fig.11 The structure of the laser 21 shown is as follows Figure 7 As shown, Fig.11 The structure of the laser 22 shown is as follows Figure 8 As shown. Laser 21a is connected in parallel with laser 21b, the positive electrode 217 of laser 21a is connected with the positive electrode 217 of laser 21b, the conductive layer 210 of laser 21a is in contact with the conductive layer 210 of laser 21b, and the negative electrode 216 of laser 21a is shared with the negative electrode 216 of laser 21b; laser 22a is connected in parallel with laser 22b, specifically, the positive electrode 227 of laser 22a is connected with the positive electrode 227 of laser 22b, and laser 22a The conductive layer 220 of the laser 21b contacts the conductive layer 220 of the laser 22b, and the negative electrode 226 of the laser 22a shares the negative electrode 226 of the laser 22b; the laser 21b is connected in parallel with the laser 22a, specifically, the positive electrode 217 of the laser 21b is connected with the positive electrode 227 of the laser 22a, the conductive layer 210 of the laser 21b contacts the conductive layer 220 of the laser 22a, and the negative electrode 216 of the laser 21b shares the negative electrode 226 of the laser 22a.

[0088] like Fig.11 As shown, in the production Fig. 9 The laser array 21 shown in FIG. 1 comprises: a first step of sequentially epitaxially growing a conductive semiconductor material layer, a high refractive index semiconductor material layer providing electrons, a semiconductor material layer with high optical gain, and a high refractive index semiconductor material layer providing holes on a substrate; a second step of referring to FIG. Fig.10 The second step is shown, but in Fig.11 In the second step, the etching stop layer is a conductive semiconductor material layer, and the conductive layer 210 of the laser 21a, the conductive layer 210 of the laser 21b, the conductive layer 220 of the laser 22a, and the conductive layer 220 of the laser 22b are specifically conductive semiconductor material layers. Fig.10 Step 3 as shown. Step 4 refer to Fig.10 The fourth step is shown.

[0089] Step 5: Deposit conductive material on the high refractive index semiconductor material providing holes to make positive electrode 217 of laser 21a, positive electrode 217 of laser 21b, positive electrode 227 of laser 22a, positive electrode 227 of laser 22b, and all positive electrodes are connected to pin PAD1 of laser array 20; deposit conductive material on the conductive semiconductor material layer to make negative electrode 216 of laser 21a, negative electrode 216 of laser 21b, negative electrode 226 of laser 22a, negative electrode 226 of laser 22b, and all negative electrodes are shared, and all negative electrodes are connected to pin PAD2 of laser array 20. The shared negative electrode may or may not be in contact with the high refractive index semiconductor material providing electrons. Fig.11 Specifically, the common negative electrode and the high refractive index semiconductor material providing electrons are not in contact with each other, and an insulating layer is provided between the common negative electrode and the high refractive index semiconductor material providing electrons. Fig. 9 Specifically, it is a top view of the laser array 20. The lasers 21 and 22 in the laser array 20 are Fig.11 When the layer structure is arranged as shown, Fig. 9 The top view shown shows pins PAD1 and PAD2.

[0090] Step 6 Reference Fig.10 Step 6 shown.

[0091] For example, Fig.10 and Fig.11 As shown, when the laser array 20 is grounded through the pin PAD2 and receives a fixed voltage or a fixed current through the pin PAD1, the lasers 21a, 21b, 22a and 22b can be made to work in parallel.

[0092] For example, Fig. 9 The laser array 20 shown in the figure specifically includes M lasers 21 and N lasers 22, where M is a positive integer greater than or equal to 2, and N is a positive integer greater than or equal to 1. The differential resistance of the laser 21 and the laser 22 is approximately equal, and is recorded as R s , then in Fig. 9 In the laser array 20 shown, the differential resistance R of the laser array 20 is R s / (M+N) (Formula 1). It can be seen from Formula 1 that when the number N increases, the differential resistance of the laser array 20 will decrease.

[0093] For example, the laser array 20 may be arranged at Figure 2 In the partition A2 of the laser array 11 shown in the figure, the differential resistance of the partition A2 of the laser array 11 when emitting laser light is reduced. Alternatively, the laser array 20 is arranged in Figure 4 In the partition A3 in the laser array 11 shown, the differential resistance of the partition A3 in the laser array 11 when emitting laser light is reduced.

[0094] For example, refer to Fig.12 The laser array 20 shown, wherein the laser array 20 includes one or more regions A4 (also referred to as first regions); Fig.12 Specifically shown are four regions A4, namely region A4a, region A4b, region A4c and region A4d. Region A4 includes a laser 22; illustratively, region A4 may include one laser 22, or region A4 may include multiple lasers 22, and the multiple lasers 22 included in region A4 are connected in parallel.

[0095] At least one laser 21 in the laser array 20 is connected in parallel with the laser 22 in the area A4, and the lasers 22 in any two areas A4 are connected in parallel. Wherein, when the laser array 20 includes multiple areas A4, at least one laser 21 in the laser array 20 is connected in parallel with the laser 22 in each area A4, and the lasers 22 in any two areas A4 are connected in parallel, so it can also be said that each laser 21 in the laser array 20 is connected in parallel with the laser 22 in each area A4.

[0096] The lasers 22 in any two regions A4 are electrically isolated. Specifically, Fig.12 The negative electrodes 216 of the plurality of lasers 21 are electrically connected to the pin PAD2, and the positive electrodes 217 of the plurality of lasers 21 are electrically connected to the pin PAD1. Fig.12In each region A4, two lasers 22 are connected in parallel, and the negative electrode 226 of each laser 22 in region A4 is also electrically connected to pin PAD2, and the positive electrode 227 of each laser 22 in region A4 is not electrically connected to pin PAD1, and the positive electrodes 227 of any two lasers 22 in region A4 are not connected. Among them, the positive electrodes 227 of the two lasers 22 in region A4a are electrically connected to pin PAD3 of the laser array 20; the positive electrodes 227 of the two lasers 22 in region A4b are electrically connected to pin PAD4 of the laser array 20; the positive electrodes 227 of the two lasers 22 in region A4c are electrically connected to pin PAD5 of the laser array 20; and the positive electrodes 227 of the two lasers 22 in region A4d are electrically connected to pin PAD6 of the laser array 20.

[0097] For example, in Fig.12 In the laser array 20 shown, when the laser array 20 is grounded through pin PAD2 and receives a fixed voltage or a fixed current through pins PAD1 and PAD3, the laser 21 and the laser 22 in area A4a can be operated in parallel, and the lasers 22 in other areas A4 do not operate. Fig.12 In the laser array 20 shown, when the laser array 20 is grounded through pin PAD2 and receives a fixed voltage or a fixed current through pins PAD1, PAD3 and PAD4, the laser 21, the laser 22 in area A4a and the laser 22 in area A4b can be made to work in parallel, and the lasers 22 in other areas A4 do not work.

[0098] More specifically, see Fig.13 As shown, Fig.13 for Fig.12 The cross-sectional view of the laser array along BB' is shown. Among them, area A4b includes laser 22c, and area A4c includes laser 22d; Fig.13 In the embodiment, the area surrounded by STI2c is specifically laser 22c, and the area surrounded by STI2d is specifically laser 22d. The lasers 22 in any two areas A4 are electrically isolated, that is, laser 22c is electrically isolated from laser 22d. Specifically, Fig.13 As shown, the negative electrode 226 of the laser 22c is connected to the negative electrode 226 of the laser 22d, but the positive electrode 227 of the laser 22c is not connected to the positive electrode 227 of the laser 22d, so that the laser 22c is electrically isolated from the laser 22d.

[0099] in, Fig.13 The structure of the laser 22 shown is as follows Figure 6 In some other embodiments, Fig.13The structure of the laser 22 shown can be as follows Figure 8 As shown, in this case, the conductive layers 220 of the two lasers 22 are in contact, the negative electrodes 226 of the two lasers 22 are shared, and the positive electrodes 227 of the two lasers 22 are not connected, so that the two lasers 22 are electrically isolated.

[0100] exist Fig.12 In the laser array 20 shown, the laser array 20 includes one or more areas A4; the area A4 includes a laser 22; at least one laser 21 in the laser array 20 is connected in parallel with the laser 22 in the area A4, and the lasers 22 in any two areas A4 are electrically isolated. The laser array 20 receives a fixed voltage. Assume that the laser array 20 includes M lasers 21 and X areas A4, one area A4 includes Y lasers 22, X is a positive integer greater than or equal to 1, and Y is a positive integer greater than or equal to 1. Since at least one laser 21 is connected in parallel with the laser 22 in the area A4, when the laser array 20 receives a fixed voltage and all lasers are working, the optical power of the lasers output by the multiple lasers 21 does not change. And the differential resistance R of the laser array 20 is R s / (M+X×Y)(Formula 2), it can be known from Formula 2 that, when X increases and / or Y increases, the differential resistance of the laser array 20 will decrease; when X decreases and / or Y decreases, the differential resistance of the laser array 20 will increase.

[0101] exist Fig.12 The laser array 20 shown receives a fixed current I 0 When all lasers are working, since multiple lasers 21 are connected in parallel, at least one laser 21 is connected in parallel with the laser 22 in area A4, and multiple lasers 22 are connected in parallel, the current flowing through the M lasers 21 is I=M×I 0 / (M+X×Y)(Formula 3). According to the relationship between power and current, ΔP=ΔI×SE (Formula 4), where, in Formula 4, SE is the slope efficiency, ΔI is the change in the current flowing through the M lasers 21, and ΔP is the change in the optical power output by the M lasers 21 in parallel. According to Formulas 3 and 4, when X increases and / or Y increases, the current I flowing through the M lasers 21 decreases, and the optical power of the lasers output by the M lasers 21 in the laser array 20 will decrease; when X decreases and / or Y decreases, the current I flowing through the M lasers 21 increases, and the optical power of the lasers output by the M lasers 21 in the laser array 20 will increase.

[0102] For example, in Fig.12In the laser array 20 shown, the laser array 20 further includes an area A5, wherein the area A5 includes a plurality of lasers 21, the plurality of lasers 21 are connected in parallel, and the lasers 21 in the area A5 are electrically isolated from the lasers 22 in any one of the areas A4.

[0103] For example, refer to Fig.14 As shown, Fig.14 for Fig.12 A cross-sectional view along CC', wherein area A5 includes laser 21c, and area A4d includes laser 22e; Fig.14 In the embodiment, the area surrounded by STI1c is specifically the laser 21c, and the area surrounded by STI2e is specifically the laser 22e. Fig.11 As shown, although the negative electrode 216 of the laser 21c is connected to the negative electrode 226 of the laser 22e, the positive electrode 217 of the laser 21c is not connected to the positive electrode 227 of the laser 22e, so that the laser 21c is electrically isolated from the laser 22e. Similarly, when the positive electrode 217 of any laser 21 in the region A5 is not connected to the positive electrode 227 of any laser 22 in the region A4, the laser 21 in the region A5 can be electrically isolated from the laser 22 in any region A4. Among them, the negative electrodes 216 of the multiple lasers 21 in the region A5 are electrically connected to the pin PAD2 of the laser array 20, the positive electrodes 217 of the multiple lasers 21 in the region A5 are electrically connected to the pin PAD1 of the laser array 20, and the positive electrode 227 of any laser 22 in the region A4 is not electrically connected to the pin PAD1 of the laser array 20.

[0104] in, Fig.14 The structure of the laser 21 shown is as follows Figure 6 As shown in (b), Fig.14 The structure of the laser 22 shown is as follows Figure 6 In some other embodiments, Fig.14 The structure of the laser 21 shown can be as follows Figure 7 As shown, Fig.14 The structure of the laser 22 shown can be as follows Figure 8 As shown, in this case, the conductive layer 210 of the laser 21 contacts the conductive layer 220 of the laser 22, the negative electrode 216 of the laser 21 shares the negative electrode 226 of the laser 22, and the positive electrode 217 of the laser 21 is not connected to the positive electrode 227 of the laser 22, so that the two lasers 22 are electrically isolated.

[0105] In other embodiments, referring to Fig.15 As shown, compared to Fig.12 The laser array 20 shown, Fig.15The region A5 in the illustrated laser array 20 further includes one or more lasers 22 , and the lasers 21 and 22 in the region A5 are connected in parallel.

[0106] exist Fig.15 In the laser array 20 shown, it is assumed that the laser array 20 includes X areas A4, each area A4 includes Y lasers 22, and the laser array 20 also includes area A5, and area A5 includes M lasers 21 and N lasers 22. The differential resistance of the laser 21 and the laser 22 is approximately equal and is recorded as R s .

[0107] exist Fig.15 When the laser array 20 shown receives a fixed voltage and all lasers are working, the optical power of the lasers output by the plurality of lasers 21 does not change because at least one laser 21 is connected in parallel with the laser 22 in the area A4. And the differential resistance R of the laser array 20 is R s / (M+N+X×Y)(Formula 5), ​​it can be known from Formula 5 that, when X increases and / or Y increases, the differential resistance of the laser array 20 will decrease; when X decreases and / or Y decreases, the differential resistance of the laser array 20 will increase.

[0108] exist Fig.15 The laser array 20 shown receives a fixed current I 0 When , since the laser 21 in area A5 is connected in parallel with the laser 22, at least one laser 21 in area A5 is connected in parallel with the laser 22 in area A4, and multiple lasers 22 are connected in parallel, the current I flowing through the M lasers 21 is I = (M + N) × I 0 / (M+N+X×Y)(Formula 6). According to Formula 6 and the above Formula 4, when X increases and / or Y increases, the current I flowing through the M lasers 21 decreases, and the optical power of the emitted lasers output by the M lasers 21 in the laser array 20 will decrease; when X decreases and / or Y decreases, the current I flowing through the M lasers 21 increases, and the optical power of the emitted lasers output by the M lasers 21 in the laser array 20 will increase.

[0109] In other embodiments, reference Fig.16 The laser array 20 shown, wherein the laser array 20 includes one or more areas A4; Fig.16 Specifically shown are four regions A4, namely region A4a, region A4b, region A4c and region A4d. Region A4 includes a laser 22; illustratively, region A4 may include one laser 22, or region A4 may include multiple lasers 22, and the multiple lasers 22 included in region A4 are connected in parallel.

[0110] At least one laser 21 in the laser array 20 is connected in series with the laser 22 in the area A4; any two lasers 22 in the area A4 are electrically isolated, and any two lasers 22 in the area A4 are connected in parallel. Fig.16 As shown, the negative electrodes 216 of the plurality of lasers 21 are electrically connected to the pin PAD2, and the positive electrodes 217 of the plurality of lasers 21 are electrically connected to the pin PAD1. Fig.16 In the embodiment, each region A4 includes two lasers 22 connected in parallel, and the positive electrode 227 of the laser 22 in each region A4 is also electrically connected to the pin PAD2 (eg Fig.16 ), the negative electrode 226 of the laser 22 in each region A4 is not electrically connected to the pin PAD1 or PAD2, and the negative electrodes 226 of the lasers 22 in any two regions A4 are not connected. Among them, the negative electrodes 226 of the two lasers 22 in region A4a are electrically connected to the pin PAD3 of the laser array 20; the negative electrodes 226 of the two lasers 22 in region A4b are electrically connected to the pin PAD4 of the laser array 20; the negative electrodes 226 of the two lasers 22 in region A4c are electrically connected to the pin PAD5 of the laser array 20; and the negative electrodes 226 of the two lasers 22 in region A4d are electrically connected to the pin PAD6 of the laser array 20.

[0111] For example, in Fig.16 In the laser array 20 shown, when the laser array 20 receives a fixed voltage or a fixed current through the pin PAD1 and is grounded through the pin PAD3, the lasers 21 can work in parallel, the lasers 22 in the area A4a can work in parallel, and the parallel lasers 21 and the parallel lasers 22 can work in series, and the lasers 22 in other areas A4 do not work. Fig.16 In the laser array 20 shown, when the laser array 20 receives a fixed voltage or a fixed current through pin PAD1 and is grounded through pins PAD3 and PAD4, the lasers 21 can be made to work in parallel, the lasers 22 in area A4a can work in parallel with the lasers 22 in area A4a, and the parallel lasers 21 can work in series with the parallel lasers 22, and the lasers 22 in other areas do not work.

[0112] More specifically, see Fig.17 As shown, Fig.17 for Fig.16 The cross-sectional view of the laser array 20 along DD' is shown. Among them, the area A4d includes laser 22f and laser 22g, and the laser array 20 also includes laser 21d and laser 21e; Fig.17In the figure, the area surrounded by STI1d is specifically laser 21d, the area surrounded by STI1e is specifically laser 21e, the area surrounded by STI2f is specifically laser 22f, and the area surrounded by STI2g is specifically laser 22g. Laser 21d is connected in parallel with laser 21e, the positive electrode 217 of laser 21d is connected with the positive electrode 217 of laser 21e, the conductive layer 210 of laser 21d is in contact with the conductive layer 210 of laser 21e, and the negative electrode 216 of laser 21d is shared with the negative electrode 216 of laser 21e. Laser 22f is connected in parallel with laser 22g, specifically, the positive electrode 227 of laser 22f is connected with the positive electrode 227 of laser 22g, the conductive layer 220 of laser 22f is in contact with the conductive layer 220 of laser 22g, and the negative electrode 226 of laser 22f is shared with the negative electrode 226 of laser 22g. Laser 21 is connected in series with laser 22 in region A4d, specifically, negative electrode 216 of laser 21e is electrically connected to positive electrode 227 of laser 22f, and conductive layer 210 of laser 21e is not in contact with conductive layer 220 of laser 22f.

[0113] For example, in Fig.17 When the laser 22f and the laser 22g shown in the figure are replaced by the laser 22 in the area A4a, the area A4b or the area A4c, the cross-sectional view along the direction parallel to the x-axis is the same as that in the figure. Fig.17 similar.

[0114] More specifically, see Fig.18 As shown, Fig.18 for Fig.16 The cross-sectional view of the laser array 20 along EE' is shown. Among them, the area A4b includes the laser 22h, and the area A4c includes the laser 22k; Fig.18 In the embodiment, the area surrounded by STI2h is specifically laser 22h, and the area surrounded by STI2k is specifically laser 22k. The lasers 22 in any two areas A4 are electrically isolated, that is, laser 22h is electrically isolated from laser 22k. Specifically, Fig.18 As shown, the conductive layer 220 of the laser 22h is not in contact with the conductive layer 220 of the laser 22k, and there is an insulating portion between the conductive layer 220 of the laser 22h and the conductive layer 220 of the laser 22k, and Fig.18The negative electrode 226 of the laser 22h in the region A4d is not connected to the negative electrode 226 of the laser 22k, the negative electrode 226 of the laser 22h is not connected to the positive electrode 227 of the laser 22k, and the positive electrode 227 of the laser 22h is not in contact with the positive electrode 227 of the laser 22k, thereby electrically isolating the laser 22h from the laser 22k. The positive electrode 227 of the laser 22h and the positive electrode 227 of the laser 22k are connected to the pin PAD2, thereby connecting the laser 21 in series with the laser 22 in the region A4d.

[0115] exist Fig.16 In the laser array 20 shown, the laser array 20 includes one or more regions A4; the region A4 includes a laser 22; at least one laser 21 in the laser array 20 is connected in series with the laser 22 in the region A4, the lasers 22 in any two regions A4 are electrically isolated, and the lasers 22 in any two regions A4 are connected in parallel. Assume that the laser array 20 includes M lasers 21 and X regions A4, and one region A4 includes Y lasers 22. The differential resistance of the laser 21 and the laser 22 is approximately equal, which is recorded as R s , and the laser array 20 receives a fixed current, and when all lasers are working, since the laser 21 is connected in series with the laser 22 in the area A4, multiple lasers 21 are connected in parallel, and any two lasers 22 in the area A4 are connected in parallel, the optical power of the laser output by the laser 21 does not change, and the differential resistance R of the laser array 20 is R s / M+R s / (X×Y)(Formula 7), it can be known from Formula 7 that, when X increases and / or Y increases, the differential resistance of the laser array 20 will decrease; when X decreases and / or Y decreases, the differential resistance of the laser array 20 will increase.

[0116] exist Fig.16 The laser array 20 shown receives a fixed voltage V 0 When all lasers are working, since the laser 21 is connected in series with the laser 22 in area A4, multiple lasers 21 are connected in parallel, and any two lasers 22 in area A4 are connected in parallel, the voltage V distributed to the M lasers 21 is (X×Y)× 0 V / (M+X×)Y (Formula 8). According to the relationship between voltage and current, ΔV=ΔI*R s / M (Formula 9), where ΔV is the change in voltage distributed to the multiple parallel lasers 21, and ΔI is the change in current flowing through the M lasers 21. According to Formula 9 and Formula 4, dividing the left and right sides of the equal sign respectively, ΔP=ΔV×SE×M / R s(Formula 10). According to Formula 10, when X increases and / or Y increases, the optical power of the emitted lasers output by the M lasers 21 in the laser array 20 will increase; when X decreases and / or Y decreases, the optical power of the emitted lasers output by the M lasers 21 in the laser array 20 will decrease.

[0117] For example, Fig.16 The laser array 20 shown also includes an area A5, wherein the area A5 includes a plurality of lasers 21, the plurality of lasers 21 are connected in parallel, and the lasers 21 in the area A5 are electrically isolated from the lasers 22 in any area A4. When the laser array 20 receives a fixed voltage or a fixed current through the pin PAD1 and is grounded through the pin PAD2, the lasers 21 can be made to work in parallel, and all the lasers 22 are not working.

[0118] In other embodiments, referring to Fig.19 As shown, compared to Fig.16 The laser array 20 shown, Fig.19 The region A5 in the illustrated laser array 20 further includes one or more lasers 22 , and the lasers 21 and 22 in the region A5 are connected in parallel.

[0119] exist Fig.19 In the laser array 20 shown, the laser array 20 includes one or more regions A4; region A4 includes lasers 22; at least one laser 21 in the laser array 20 is connected in series with the laser 22 in region A4, any two lasers 22 in regions A4 are electrically isolated, and any two lasers 22 in regions A4 are connected in parallel; the laser array 20 also includes region A5, region A5 includes multiple lasers 21 and one or more lasers 22, and the lasers 21 and lasers 22 in region A5 are connected in parallel. Assume that the laser array 20 includes X regions A4, one region A4 includes Y lasers 22, and region A5 includes M lasers 21 and N lasers 22. Among them, the differential resistance of laser 21 and laser 22 is approximately equal, which is recorded as R s .

[0120] exist Fig.19 When the laser array 20 shown receives a fixed current and all lasers are working, since the laser 21 is connected in series with the laser 22 in the area A4, multiple lasers 21 are connected in parallel, and any two lasers 22 in the area A4 are connected in parallel, the optical power of the laser output by the laser 21 does not change, and the differential resistance R of the laser array 20 is R s / (M+N)+R s / (X×Y)(Formula 11), it can be known from Formula 11 that, when X increases and / or Y increases, the differential resistance of the laser array 20 will decrease; when X decreases and / or Y decreases, the differential resistance of the laser array 20 will increase.

[0121] exist Fig.19 The laser array 20 shown receives a fixed voltage V 0 When all lasers are working, since the laser 21 is connected in series with the laser 22 in area A4, multiple lasers 21 are connected in parallel, and any two lasers 22 in area A4 are connected in parallel, the voltage V distributed to the M lasers 21 is (X×Y)×V 0 / (M+N+X×Y)(Formula 12). According to the relationship between voltage and current, ΔV=ΔI*R s / (M+N)(Formula 13), where ΔV is the change in voltage distributed to the multiple parallel lasers 21, and ΔI is the change in current flowing through the M lasers 21. According to Formula 13 and Formula 4, dividing the left and right sides of the equal sign respectively, ΔP=ΔV×SE×(M+N) / R s (Formula 14). According to Formula 14, when X increases and / or Y increases, the optical power of the emitted lasers output by the M lasers 21 in the laser array 20 will increase; when X decreases and / or Y decreases, the optical power of the emitted lasers output by the M lasers 21 in the laser array 20 will decrease.

[0122] For example, in Fig. 9 , Fig.12 , Fig.15 , Fig.16 , Fig.19 In the laser array 20 shown, it is assumed that the laser 22 does not output laser light when in operation, and therefore the optical power of the emitted laser light output by the laser array 20 is the optical power of the laser light output by the laser 21 in the laser array 20 .

[0123] For example, refer to Fig. 9 , Fig.12 , Fig.15 , Fig.16 , Fig.19 The laser array 20 shown can be arranged at Figure 1 In the laser radar 10 shown in FIG. 1 , the driving device 12 is used to drive the reference Fig. 9 , Fig.12 , Fig.15 , Fig.16 , Fig.19 The laser array 20 is shown to have a fixed voltage or current input.

[0124] For example, when the drive device 12 is Fig. 9When a fixed voltage is input to the laser array 20 shown, the number of lasers 22 in the laser array 20 is negatively correlated with the differential resistance of the laser array 20 .

[0125] For example, Fig.12 or Fig.15 or Fig.16 or Fig.19 The laser array 20 shown includes one or more areas A4; the driving device 12 can input a fixed voltage or a fixed current to n areas A4 so that the lasers 22 in the n areas A4 work together with the laser 21, where n is a positive integer greater than or equal to 0.

[0126] For example, when the drive device 12 is Fig.12 or Fig.15 When a fixed voltage is input to the laser array 20 shown in the figure, it is assumed that the driving device 12 can input a fixed voltage to n areas A4, where n is negatively correlated with the differential resistance of the laser array 20. Fig.12 or Fig.15 When a fixed current is input to the laser array 20 shown, it is assumed that the driving device 12 can input a fixed voltage to n areas A4 , where n is negatively correlated with the optical power output by the laser 21 in the laser array 20 .

[0127] For example, when the drive device 12 is Fig.16 or Fig.19 When a fixed current is input to the laser array 20 shown in the figure, it is assumed that the driving device 12 can input a fixed voltage to n areas A4, where n is negatively correlated with the differential resistance of the laser array 20. Fig.16 or Fig.19 When a fixed voltage is input to the laser array 20 shown, it is assumed that the driving device 12 can input a fixed voltage to n areas A4 , where n is positively correlated with the optical power output by the laser 21 in the laser array 20 .

[0128] In some examples, the driving device 12 is used to receive an input signal, and control the input of a fixed voltage or a fixed current to the n areas A4 according to the input signal, and the input signal is an input signal received by the laser radar 10. For example, the designer of the laser radar determines to select n areas A4 to work according to the parameters of the laser radar 10 and the distance between the obstacle and the laser radar 10, then the laser radar 10 receives the input signal input by the designer, the input signal indicates the number n of the selected areas A4, and the input signal is transmitted to the driving device 12, so that the driving device 12 inputs a fixed voltage or a fixed current to the n areas A4 according to the input signal.

[0129] In other examples, the driving device 12 is used to receive a feedback signal, and according to the feedback signal, a fixed voltage or a fixed current is input to the n regions A4. For example, the receiving device 14 is used to receive the reflected laser, generate a received signal, and transmit the received signal to the signal processing device 13; wherein the emitted laser is reflected after encountering an obstacle to form a reflected laser; the signal processing device 13 is used to generate a feedback signal according to the received signal, and the feedback signal indicates the number n of the selected regions A4. Exemplarily, when n is positively correlated with the optical power output by the laser 21 in the laser array 20, and the received signal is greater than a predetermined value, that is, when the optical power of the received reflected signal is too large, the feedback signal generated by the signal processing device 13 indicates that the number n of the selected regions A4 is reduced. Exemplarily, when n is negatively correlated with the optical power output by the laser 21 in the laser array 20, and the received signal is greater than a predetermined value, that is, when the optical power of the received reflected signal is too large, the feedback signal generated by the signal processing device 13 indicates that the number n of the selected regions A4 is increased.

[0130] Although the present application has been described in conjunction with specific features and embodiments thereof, it is obvious that various modifications and combinations may be made thereto without departing from the spirit and scope of the present application. Accordingly, this specification and the drawings are merely exemplary illustrations of the present application as defined by the appended claims, and are deemed to have covered any and all modifications, variations, combinations or equivalents within the scope of the present application. Obviously, those skilled in the art may make various modifications and variations to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A laser array, characterized in that: The laser array includes a first laser and a second laser; The first laser comprises a first reflective layer, a first active layer and a second reflective layer which are sequentially arranged along an epitaxial direction, and a first oxidized hole is arranged in the second reflective layer; The second laser comprises a third reflective layer, a second active layer and a fourth reflective layer sequentially arranged along the epitaxial direction, a second oxide hole is arranged in the fourth reflective layer, a light blocking layer is further arranged on a side of the fourth reflective layer away from the second active layer, and a projection of the light blocking layer on the second active layer overlaps with a projection of the second oxide hole on the second active layer; The first laser is electrically connected to the second laser.

2. The laser array according to claim 1, characterized in that: The laser array includes a plurality of the first lasers and at least one of the second lasers; A plurality of the first lasers are connected in parallel; At least one of the first lasers is electrically connected to any one of the second lasers.

3. The laser array according to claim 2, characterized in that: The laser array includes one or more first regions; The first region includes the second laser; at least one of the first lasers is connected in parallel with the second laser in the first region; The second lasers in any two of the first regions are electrically isolated, and the second lasers in any two of the first regions are connected in parallel.

4. The laser array according to claim 2, characterized in that: The laser array includes one or more first regions; The first region includes the second laser; at least one of the first lasers is connected in series with the second laser in the first region; The second lasers in any two of the first regions are electrically isolated, and the second lasers in any two of the first regions are connected in parallel.

5. The laser array according to claim 3 or 4, characterized in that: The laser array also includes a second region; The second region includes a plurality of the first lasers; The first laser in the second region is electrically isolated from the second laser in any one of the first regions.

6. The laser array according to claim 5, characterized in that: The second region is further provided with one or more second lasers, and the first lasers and the second lasers in the second region are connected in parallel.

7. The laser array according to any one of claims 3 to 6, characterized in that: The first region includes a plurality of the second lasers, and the plurality of the second lasers are connected in parallel.

8. The laser array according to any one of claims 1 to 7, characterized in that: The laser array is used to receive a fixed voltage.

9. The laser array according to any one of claims 1 to 7, characterized in that: The laser array is configured to receive a fixed current.

10. The laser array according to any one of claims 1 to 9, characterized in that: The first laser further includes a first substrate disposed on a side of the first reflective layer away from the first active layer, a first negative electrode disposed on a side of the first substrate away from the first active layer, and a first positive electrode disposed on a side of the second reflective layer away from the first active layer; Alternatively, the first laser further includes a first substrate disposed on a side of the first reflective layer away from the first active layer, a first conductive layer disposed between the first substrate and the first reflective layer, a first negative electrode in contact with the first conductive layer, and a first positive electrode disposed on a side of the second reflective layer away from the first active layer.

11. The laser array according to any one of claims 1 to 10, characterized in that: The second laser further comprises a second substrate disposed on a side of the third reflective layer away from the second active layer, a second negative electrode disposed on a side of the second substrate away from the second active layer, and a second positive electrode disposed on a side of the fourth reflective layer away from the second active layer; Alternatively, the second laser further includes a second substrate disposed on a side of the third reflective layer away from the second active layer, a second conductive layer disposed between the second substrate and the third reflective layer, a second negative electrode in contact with the second conductive layer, and a second positive electrode disposed on a side of the fourth reflective layer away from the second active layer.

12. A laser radar, characterized in that: comprising a driving device and a laser array as claimed in any one of claims 1 to 11; The driving device is used to input a fixed voltage or a fixed current to the laser array.

13. The laser radar according to claim 12, characterized in that: The laser array includes one or more first regions; The driving device is used to receive an input signal and control the input of a fixed voltage or a fixed current to the n first areas according to the input signal. The input signal is an input signal received by the laser radar, and n is an integer greater than or equal to 0.

14. The laser radar according to claim 12, characterized in that: The laser array includes one or more first regions; The driving device is used to receive a feedback signal and control the input of a fixed voltage or a fixed current to n first regions according to the feedback signal, where n is an integer greater than or equal to 0.

15. The laser radar according to claim 14, characterized in that: The laser radar also includes a receiving device and a signal processing device; The receiving device is used to receive the reflected laser light, generate a receiving signal, and transmit the receiving signal to the signal processing device; The emitted laser is reflected after encountering an obstacle to form the reflected laser; The signal processing device is used to generate the feedback signal according to the received signal.

16. The laser radar according to claim 15, characterized in that: The signal processing device is also used to determine the distance between the obstacle and the laser radar based on the received signal.

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