Light emitting diode chip set, display backlight module and illumination module

Abstract

The embodiment of the invention provides a light-emitting diode chip set, a backlight module of a display and an illumination module, and relates to the technical field of semiconductors, the light-emitting diode chip set generates white light and comprises at least one multi-wavelength chip, the multi-wavelength chip comprises an N-type semiconductor layer, a P-type semiconductor layer, a first light-emitting layer and a second light-emitting layer, wherein the first light-emitting layer and the second light-emitting layer are arranged between the N-type semiconductor layer and the P-type semiconductor layer and are stacked. The first light-emitting layer generates light of a first wave band through electroluminescence and excites the second light-emitting layer to generate light of a second wave band, the number of wavelengths contained in the light of the first wave band and the number of wavelengths contained in the light of the second wave band are both larger than or equal to 1 and smaller than or equal to 10, and a hole isolation area exists between the first light-emitting layer and the second light-emitting layer. The multi-wavelength chip has higher external quantum efficiency, the limitation of a traditional white light scheme (blue chip + yellow fluorescent powder or blue chip + green fluorescent powder + red fluorescent powder) can be broken through, the reliability is improved, and the service life is prolonged.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a light emitting diode chipset, a display backlight module and a lighting module. Background Art

[0002] Light Emitting Diode (LED) is widely used in indication, display, decoration, lighting and many other fields due to its advantages of energy saving and environmental protection. The energy consumption of white light LED is only 1 / 8 of that of incandescent lamp and 1 / 2 of that of fluorescent lamp. Its service life can be up to 100,000 hours. It is also mercury-free and easy to recycle, which is of great significance for environmental protection and energy conservation. White light LED is usually obtained by covering phosphor on a single wavelength chip, which has problems such as low color rendering index, poor reliability and short service life. Summary of the invention

[0003] The embodiments of the present application provide a light-emitting diode chipset, a display backlight module and a lighting module, which can improve the color rendering index, color gamut, reliability and service life.

[0004] In a first aspect, an embodiment of the present application provides a light-emitting diode chipset, which generates white light and includes at least one multi-wavelength chip, wherein the multi-wavelength chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer disposed between and stacked on the N-type semiconductor layer and the P-type semiconductor layer, wherein the first light-emitting layer is located on a side of the second light-emitting layer close to the P-type semiconductor layer;

[0005] The first light-emitting layer generates light of a first wavelength band in an electroluminescent manner, and the light of the first wavelength band excites the second light-emitting layer to generate light of a second wavelength band, and the number of wavelengths contained in the light of the first wavelength band and the light of the second wavelength band are both greater than or equal to 1 and less than or equal to 10;

[0006] A hole isolation region is present between the first light-emitting layer and the second light-emitting layer.

[0007] In a second aspect, an embodiment of the present application provides a display backlight module, comprising a driving backplane and a light-emitting diode chipset as described above, wherein the light-emitting diode chipset is disposed on the driving backplane and electrically connected to the driving backplane.

[0008] In a third aspect, an embodiment of the present application provides a lighting device, comprising a circuit board and the above-mentioned light-emitting diode chipset, wherein the light-emitting diode chipset is arranged on the circuit board and electrically connected to the circuit board.

[0009] The light-emitting diode chipset, display backlight module and lighting module in the embodiment of the present application can form white light, and the light-emitting diode chipset includes at least one multi-wavelength chip. The multi-wavelength chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer disposed and stacked between the N-type semiconductor layer and the P-type semiconductor layer, and the first light-emitting layer is located on the side of the second light-emitting layer close to the P-type semiconductor layer. The first light-emitting layer generates light of the first wavelength band in an electroluminescent manner, and the light of the first wavelength band excites the second light-emitting layer to generate light of the second wavelength band, and there is a hole isolation region between the first light-emitting layer and the second light-emitting layer. In this way, the second light-emitting layer is photoluminescent, and the multi-wavelength chip has two forms of electroluminescence and photoluminescence, so that the multi-wavelength chip has a higher external quantum efficiency, and at the same time enables the light-emitting diode chipset to flexibly form white light, and can provide a variety of white light solutions to break through the traditional white light patent blockade.

[0010] The number of wavelengths contained in the light of the first band and the light of the second band are both greater than or equal to 1 and less than or equal to 10. The number of wavelengths and the specific wavelengths can be selected as needed to form a white light mixed with two or more wavelengths, which is closer to sunlight, and can obtain a higher CRI in terms of lighting and a higher color gamut in terms of display. The LED chipset has a simple driving method, a simple packaging process, and a simple control method, which is easy to control costs. At the same time, it is easy to obtain a full-spectrum lighting spectrum, and the spectrum is stable and will not fluctuate with changes in current. The optical power ratio can also be designed according to different needs, so that the optical power ratio of multiple wavelengths generated by the multi-wavelength chip is consistent with the required optical power ratio. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0012] Figure 1 A schematic diagram of a lamp bead in an embodiment of the present application;

[0013] Figure 2 This is a first schematic diagram of a multi-wavelength chip in an embodiment of the present application;

[0014] Figure 3 This is a second schematic diagram of the multi-wavelength chip in the embodiment of the present application;

[0015] Figure 4 This is a third schematic diagram of the multi-wavelength chip in the embodiment of the present application;

[0016] Figure 5This is a fourth schematic diagram of the multi-wavelength chip in the embodiment of the present application;

[0017] Figure 6 This is a fifth schematic diagram of the multi-wavelength chip in the embodiment of the present application;

[0018] Figure 7 This is a first schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0019] Figure 8 A second schematic diagram of a light emitting diode chipset in an embodiment of the present application;

[0020] Fig. 9 A third schematic diagram of the light emitting diode chipset in the embodiment of the present application;

[0021] Fig.10 A fourth schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0022] Fig.11 is a fifth schematic diagram of the light emitting diode chipset in the embodiment of the present application;

[0023] Fig.12 is a sixth schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0024] Fig.13 is a seventh schematic diagram of the light emitting diode chipset in the embodiment of the present application;

[0025] Fig.14 is an eighth schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0026] Fig.15 is a ninth schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0027] Fig.16 is a tenth schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0028] Fig.17 This is an eleventh schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0029] Fig.18 This is a twelfth schematic diagram of the light emitting diode chip set in the embodiment of the present application;

[0030] Fig.19 This is a thirteenth schematic diagram of the light emitting diode chip set in the embodiment of the present application;

[0031] Fig. 20 This is a fourteenth schematic diagram of a light emitting diode chip set in an embodiment of the present application;

[0032] Fig.21 This is a fifteenth schematic diagram of the light emitting diode chip set in the embodiment of the present application;

[0033] Fig. 22 This is a sixteenth schematic diagram of the light emitting diode chip set in the embodiment of the present application;

[0034] Fig.23 This is a seventeenth schematic diagram of the light emitting diode chip set in the embodiment of the present application;

[0035] Fig.24 This is an eighteenth schematic diagram of the light emitting diode chip set in the embodiment of the present application;

[0036] Fig.25 A first schematic diagram of the first layer and the second layer in the embodiment of the present application;

[0037] Fig.26 A second schematic diagram of the first layer and the second layer in the embodiment of the present application;

[0038] Fig. 27 A third schematic diagram of the first layer and the second layer in the embodiment of the present application;

[0039] Fig.28 A schematic diagram of a quantum well in an embodiment of the present application;

[0040] Fig.29 A schematic diagram of a multi-quantum well in an embodiment of the present application;

[0041] Fig.30 This is a schematic diagram of the first structure of the multi-wavelength chip in the embodiment of the present application;

[0042] Fig.31 This is a schematic diagram of the second structure of the multi-wavelength chip in the embodiment of the present application;

[0043] Fig.32 This is a third structural schematic diagram of the multi-wavelength chip in the embodiment of the present application;

[0044] Fig.33 A schematic diagram of a backlight module in an embodiment of the present application;

[0045] Fig.34 Another schematic diagram of the backlight module in the embodiment of the present application.

[0046] Description of reference numerals:

[0047] 101-substrate; 102-buffer layer;

[0048] 103-N-type electrode; 104-N-type semiconductor layer;

[0049] 105-P-type electrode; 106a-first light-emitting layer;

[0050] 106b-second light emitting layer; 107-P-type semiconductor layer;

[0051] 108-current spreading layer; 109-reflection layer;

[0052] 110-a first insulating layer; 111-a second insulating layer;

[0053] 112-bonding substrate; 113-binding layer;

[0054] 114-color conversion material; 201-first layer;

[0055] 202-second layer; 203-first hole blocking layer;

[0056] 204-a second hole blocking layer; 205-a barrier layer;

[0057] 206-potential well layer; 300-driving back plate;

[0058] 301-driving substrate; 302-driving unit;

[0059] 400-Packaging lens. DETAILED DESCRIPTION

[0060] There are several forms of obtaining white light from LEDs in related technologies: the first is to cover a single blue light chip with yellow phosphor to form white light, which has a low CRI and high color temperature, and the yellow phosphor has problems with life and reliability. The second is to cover a single blue light chip with red phosphor and green phosphor to form white light, which has a complex powder adjustment and packaging process, high cost, and green phosphor has problems with life and reliability. The spectral purity of the phosphors in the above two methods is not enough, and there is also a problem of low color gamut. The third is to form white light with multiple monochrome chips of different wavelengths and multi-color fluorescent substances, which has high cost, complex driving method, complex packaging process, uneven control, and fluorescent substances have problems with life and reliability. The fourth is to mix multiple monochrome chips of different wavelengths to form white light, which has a complex driving method, uneven control, and high cost.

[0061] In view of this, the light-emitting diode chipset, display backlight module and lighting module provided in the embodiments of the present application can form white light, and the light-emitting diode chipset includes at least one multi-wavelength chip. The multi-wavelength chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer arranged and stacked between the N-type semiconductor layer and the P-type semiconductor layer, and the first light-emitting layer is located on the side of the second light-emitting layer close to the P-type semiconductor layer. The first light-emitting layer generates light of the first wavelength band in an electroluminescent manner, and the light of the first wavelength band excites the second light-emitting layer to generate light of the second wavelength band, and there is a hole isolation region between the first light-emitting layer and the second light-emitting layer.

[0062] In this way, the second light-emitting layer is photoluminescent, and the multi-wavelength chip has two forms, electroluminescence and photoluminescence, so that the spectrum of the multi-wavelength chip is stable and will not fluctuate with the change of current. The photoluminescent second light-emitting layer is located between the N-type semiconductor layer and the P-type semiconductor layer. The second light-emitting layer can release stress in advance, so that the external quantum efficiency of the first light-emitting layer is improved. At the same time, the second light-emitting layer itself has good crystal quality and can be reflected and absorbed multiple times between the N-type semiconductor layer and the P-type semiconductor layer. The external quantum efficiency of the second light-emitting layer can also be improved, so that the wavelengths generated by the first light-emitting layer and the second light-emitting layer can have higher external quantum efficiency than traditional LEDs.

[0063] Among them, the number of wavelengths contained in the light of the first band and the light of the second band are both greater than or equal to 1 and less than or equal to 10. The number of wavelengths and the specific wavelengths can be selected as needed to form a white light mixed with two or more wavelengths, which can form white light closer to sunlight (daylight), and can obtain a higher CRI in terms of lighting and a higher color gamut in terms of display. The light-emitting diode chipset can flexibly form white light, and can provide a variety of white light solutions to break through the traditional white light patent blockade. The optical power ratio can also be designed according to different needs, so that the optical power ratio of multiple wavelengths generated by the multi-wavelength chip is consistent with the required optical power ratio.

[0064] The LED chipset has a simple driving method, a simple packaging process, and a simple control method, which is convenient for controlling costs and easily obtaining a full-spectrum lighting spectrum. In addition, the size of the multi-wavelength chip and the LED chipset can be flexibly adjusted to reduce costs and improve reliability and service life.

[0065] In order to make the purpose, technical scheme and advantages of the present application clearer, the technical scheme in the embodiment of the present application will be described in more detail below in conjunction with the drawings in the preferred embodiments of the present application. In the drawings, the same or similar reference numerals throughout represent the same or similar parts or parts with the same or similar functions. The described embodiments are part of the embodiments of the present application, not all of the embodiments. The embodiments described below with reference to the drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limitations on the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application. The embodiments of the present application are described in detail below in conjunction with the drawings.

[0066] In a first aspect, the embodiments of the present application provide a light emitting diode chipset, which generates white light, such as full-spectrum white light, and can be applied to lighting, display and other fields. The light emitting diode chipset is packaged to form a light emitting diode (LED), a mini LED backlight or a surface light source to simplify the packaging method, driving method and control method.

[0067] Among them, see Figure 1 The lamp bead includes a light emitting diode chip group CG, a circuit board 300 and a packaging lens 400. The light emitting diode chip group CG is arranged on the circuit board 300, for example, the light emitting diode chip group CG is arranged on the front of the circuit board 300 and is welded to the corresponding pad on the front of the circuit board 300, or electrically connected with a conductive adhesive, and the light emitting diode chip group CG is covered with the packaging lens 400.

[0068] In some possible examples, the color temperature of white light generated by the LED chipset is 1600-18000, the color rendering index (CRI) of the white light is 90-100, the x value in the color coordinates of the white light is greater than or equal to 0.26 and less than or equal to 0.6, and the y value is greater than or equal to 0.28 and less than or equal to 0.52. The required LED chipset CG is selected according to different applications. For example, a narrow half-width multi-wavelength chip MC is selected for display backlighting to obtain a higher color gamut, and a LED chipset CG with a high color rendering index is selected for lighting.

[0069] See also Figure 2 and Figure 3The light emitting diode chip group includes at least one multi-wavelength chip MC, which includes an N-type semiconductor layer 104, a P-type semiconductor layer 107, and a first light emitting layer 106a and a second light emitting layer 106b disposed between the N-type semiconductor layer 104 and the P-type semiconductor layer 107 and stacked, wherein the first light emitting layer 106a is located on a side of the second light emitting layer 106b close to the P-type semiconductor layer 107. The first light emitting layer 106a generates light of a first wavelength band in an electroluminescent manner, and the light of the first wavelength band excites the second light emitting layer 106b to generate light of a second wavelength band, and the number of wavelengths contained in the light of the first wavelength band and the light of the second wavelength band are both greater than or equal to 1 and less than or equal to 10.

[0070] It is understandable that the light emitting diode chip group includes one or more multi-wavelength chips MC. The shape of the multi-wavelength chip MC can be a rectangle, a square, a circle, an ellipse, a triangle, a rhombus, a parallelogram, or other polygons. Each multi-wavelength chip MC includes an N-type semiconductor layer 104, a P-type semiconductor layer 107, a first light-emitting layer 106a, and a second light-emitting layer 106b. The first light-emitting layer 106a and the second light-emitting layer 106b are stacked, and the first light-emitting layer 106a is located on the side of the second light-emitting layer 106b close to the P-type semiconductor layer 107, that is, the first light-emitting layer 106a is closer to the P-type semiconductor layer 107, and the second light-emitting layer 106b is closer to the N-type semiconductor layer 104.

[0071] The holes output by the P-type semiconductor layer 107 and the electrons output by the N-type semiconductor layer 104 are recombined in the first light-emitting layer 106a, so that the first light-emitting layer 106a generates light of the first wavelength band by means of electroluminescence (EL). The holes output by the P-type semiconductor layer 107 cannot reach the second light-emitting layer 106b, so that the second light-emitting layer 106b cannot generate electroluminescence. The light of the first wavelength band generated by the first light-emitting layer 106a is transmitted to the second light-emitting layer 106b, and the second light-emitting layer 106b is excited, so that the second light-emitting layer 106b generates light of the second wavelength band by means of photoluminescence (PL).

[0072] The light of the first band may include multiple wavelengths, and the number of wavelengths included is greater than or equal to 1 and less than or equal to 10, that is, the light of the first band includes c different wavelengths, 1≤c≤10. The light of the second band may include multiple wavelengths, and the number of wavelengths included is greater than or equal to 1 and less than or equal to 10, that is, the light of the second band includes d different wavelengths, 1≤d≤10. In this way, the light emitting diode chipset exists in two forms: electroluminescence and photoluminescence, and the number of wavelengths and specific wavelengths can be selected as needed to form a white light mixed with two or more wavelengths (for example, a white light mixed with four wavelengths), which is closer to sunlight and improves the performance, reliability and service life of the light emitting diode chipset. The optical power ratio can also be designed according to different needs, so that the optical power ratio of multiple wavelengths generated by the multi-wavelength chip MC is consistent with the required optical power ratio.

[0073] The first wavelength includes one of the ultraviolet wavelength, the purple wavelength, the blue wavelength, the cyan wavelength, or the green wavelength, the light of the second wavelength includes one of the ultraviolet wavelength, the purple wavelength, the blue wavelength, the cyan wavelength, the green wavelength, the yellow wavelength, the red wavelength, or the infrared wavelength, and at least one wavelength of the light generated by the first light-emitting layer 106a is smaller than each wavelength of the light generated by the second light-emitting layer 106b. In this way, the light generated by the first light-emitting layer 106a can excite the second light-emitting layer 106b to emit light.

[0074] In some possible examples, the wavelength range of the ultraviolet band is 200nm-400nm, the wavelength range of the violet band is 400nm-420nm, the wavelength range of the blue band is 420nm-470nm, the wavelength range of the cyan band is 470nm-500nm, the wavelength range of the green band is 500nm-565nm, the wavelength range of the yellow band is 565nm-590nm, the wavelength range of the red band is 590nm-740nm, and the wavelength range of the infrared band is 740nm-1.7μm.

[0075] It can be understood that the ultraviolet band can be a long-wave ultraviolet band, a medium-wave ultraviolet band, or a short-wave ultraviolet band. Among them, the wavelength range of the long-wave ultraviolet band is 320nm-400nm, the wavelength range of the medium-wave ultraviolet band is 275nm-320nm, and the wavelength range of the short-wave ultraviolet band is 200nm-275nm. For the convenience of description and representation, the ultraviolet band and the purple band are both represented by A, the blue band is represented by B, the cyan band is represented by C, the green band is represented by G, the yellow band is represented by Y, the red band is represented by R, and the infrared band is represented by I.

[0076] Among them, the light in the ultraviolet band is ultraviolet light, which is colorless. Ultraviolet light includes long-wave ultraviolet light (UVA), medium-wave ultraviolet light (UVB), and can also be short-wave ultraviolet light (UVC). The light in the purple band is purple light, and the color of this light is purple. The light in the blue band is blue light, and the color of this light is blue. The light in the cyan band is cyan light, and the color of this light is cyan. The light in the green band is green light, and the color of this light is green. The light in the yellow band is yellow light, and the color of this light is yellow. The light in the red band is red light, and the color of this light is red. The light in the infrared band is infrared light, which is colorless.

[0077] The first wavelength band and the second wavelength band may be the same or different. Figure 1 The first wavelength band and the second wavelength band are the same, for example, both are blue wavelength bands, that is, the light of the first wavelength band and the light of the second wavelength band are both blue light. The light of the first wavelength band may include at least one wavelength, for example, including a wavelength of 430nm and a wavelength of 450nm, and the light of the second wavelength band may include at least one wavelength, for example, including a wavelength of 440nm. The multi-wavelength chip MC includes multiple wavelengths in one wavelength band.

[0078] The first wavelength band and the second wavelength band may also be different, for example, see Figure 3 The first band is the ultraviolet band, and the second band is the green band. The light in the first band is ultraviolet light, and the light in the second band is green light. The light in the first band may include at least one wavelength, such as 230nm and 330nm, and the light in the second band may include at least one wavelength, such as 550nm. The multi-wavelength chip MC includes two bands and multiple wavelengths.

[0079] In order to realize the generation of white light by the LED chipset, the light generated by the LED chipset includes at least two first complementary band lights, the two first complementary band lights are mixed to generate white light, one of the bands corresponding to the two first complementary band lights is located in the ultraviolet band, the purple band, the blue band or the cyan band, and the other is located in the yellow band; or, the light generated by the LED chipset includes at least three second complementary band lights, the three second complementary band lights are mixed to generate white light, one of the bands corresponding to the three second complementary band lights is located in the ultraviolet band, the purple band, the blue band or the cyan band, another is located in the green band, and the last one is located in the red band. Exemplarily, the two first complementary band lights are the light of the cyan band and the light of the yellow band, respectively, and the light of the cyan band and the light of the yellow band can be mixed to generate white light without the need for light of other bands. The three second complementary band lights are light of the purple band, light of the green band and light of the red band. The purple band, the green band and the red band are mixed to produce white light, and no light of other bands is needed.

[0080] It is understandable that when the multi-wavelength chip MC includes one band and multiple wavelengths, the LED chip group in which it is located also includes at least one single-wavelength chip SC and / or at least one color conversion material and / or other multi-wavelength chips MC, so that the light generated by the multi-wavelength chip MC, the light generated by the single-wavelength chip SC and / or the light after the color conversion material and / or the light generated by other multi-wavelength chips MC are mixed to form white light. When the multi-wavelength chip MC includes two bands and multiple wavelengths, the two bands can be mixed to form white light, or cooperate with at least one single-wavelength chip SC and / or at least one color conversion material and / or other multi-wavelength chip MC in the LED chip group in which it is located to produce white light.

[0081] In a first possible embodiment, see Figures 4 to 6 , the light of the first wavelength band and the light of the second wavelength band generated by the same multi-wavelength chip MC are mixed to form white light. In this way, each multi-wavelength chip MC can independently generate white light, and can directly emit white light without cooperating with other multi-wavelength chips MC and / or color conversion materials and / or other multi-wavelength chips MC. At the same time, the light of the first wavelength band and the light of the second wavelength band of the same multi-wavelength chip MC are mixed in a direction perpendicular to the thickness of the chip, and the uniformity of the white light formed is better and the performance is better.

[0082] The light of the first wavelength band and the light of the second wavelength band are two first complementary wavelength band lights. Thus, the wavelength band corresponding to one of the light of the first wavelength band and the light of the second wavelength band is the ultraviolet wavelength band, the purple wavelength band, the blue wavelength band or the cyan wavelength band, and the wavelength band corresponding to the other is the yellow wavelength band, that is, one of the light of the first wavelength band and the light of the second wavelength band is ultraviolet, purple, blue or cyan, and the other is yellow. Figures 4 to 6 As shown, when the multi-wavelength chip MC is in the three forms of AxYy, BxYy, and CxYy, the multi-wavelength chip MC can emit white light independently.

[0083] In a second possible embodiment, see Figures 7 to 10 At least two multi-wavelength chips MC cooperate to generate white light, that is, two or more multi-wavelength chips MC are combined to obtain white light. Among them, the light generated by at least two multi-wavelength chips MC contains two first complementary band lights or three second complementary band lights, and the two first complementary band lights / three second complementary band lights can be mixed to form white light, and the form of other lights is not limited.

[0084] Specifically, in some possible implementations, there are two first complementary band lights in the light of the two multi-wavelength chips MC, and the two first complementary band lights are respectively located in the two multi-wavelength chips MC. In this way, the two first complementary band lights are respectively located in the two multi-wavelength chips MC, and the two multi-wavelength chips MC can be mixed to generate white light. For example, see Figure 6 One of the two multi-wavelength chips MC1 can be in the form of AxAy, AxBy, AxCy, AxIy, AxGy, BxRy, etc., and the other multi-wavelength chip MC2 can be in the form of GxYy. These two multi-wavelength chips MC cooperate to form white light.

[0085] In some other possible implementations, there are three second complementary band lights in the light of the two multi-wavelength chips MC, and one of the three second complementary band lights and the other complementary band lights are respectively located in the two multi-wavelength chips MC. In this way, the three second complementary band lights are separately located in the two multi-wavelength chips MC, and the two multi-wavelength chips MC can be mixed to generate white light. For example, see Figure 7 , one of the two multi-wavelength chips MC1 may be in the form of AxAy, AxBy, AxCy, AxIy, and the other multi-wavelength chip MC2 may be in the form of GxRy. Figure 8 One of the two multi-wavelength chips MC can be in the form of AxGy, and the other multi-wavelength chip MC can be in the form of AxRy, BxRy, CxRy, or GxRy.

[0086] It should be noted that there are multiple types of white light in the LED chip group CG. In the example of two multi-wavelength chips MC mixing to generate white light, one of the multi-wavelength chips MC cannot generate white light independently and needs to cooperate with another multi-wavelength chip MC to generate white light. The multi-wavelength chip MC that cooperates with it can generate white light independently. For example, see Fig. 9 , the two multi-wavelength chips MC are in the form of AxYy and GxRy respectively.

[0087] As a third possible embodiment, see Figures 11 to 15, the light-emitting diode chip group CG also includes at least one single-wavelength chip SC, and each single-wavelength chip SC generates light of a single wavelength. The light generated by the single-wavelength chip SC can be one of ultraviolet light, purple light, blue light, cyan light, green light, yellow light or red light, and the light contains only one wavelength. At least one multi-wavelength chip MC and at least one single-wavelength chip SC cooperate to generate white light, and these multi-wavelength chips MC and single-wavelength chips SC can be arranged side by side, or arranged in other forms. Among them, there are two first complementary band lights or three second complementary band lights in the light of at least one multi-wavelength chip MC and at least one single-wavelength chip SC, and the two first complementary band lights / three second complementary band lights can be mixed to form white light, and the form of other light is not limited.

[0088] In some possible implementations, there are two first complementary wavelength band lights in the light of at least one multi-wavelength chip MC and one single-wavelength chip SC, one of the two first complementary wavelength band lights is located in the single-wavelength chip SC, and one of the two first complementary wavelength band lights is located in the ultraviolet band, purple band, blue band or cyan band, and the other is located in the yellow band. In this way, the multi-wavelength chip MC and the single-wavelength chip SC are mixed to generate white light. For example, see Fig.11 The multi-wavelength chip MC can be in the form of AxAy, AxBy, AxCy, AxIy, etc., and the single-wavelength chip SC can be in the form of Y.

[0089] In some other possible implementations, there are three second complementary band lights in the light of at least one multi-wavelength chip MC and at least one single-wavelength chip SC. One or two of the three second complementary band lights are located in the corresponding single-wavelength chip SC. In this way, a multi-wavelength chip MC and a single-wavelength chip SC are mixed to produce white light, or two multi-wavelength chips MC and a single-wavelength chip SC produce white light, or one multi-wavelength chip MC and two multi-wavelength chips MC produce white light, which can be flexibly combined as needed to form white light.

[0090] For example, see Fig.12 , the multi-wavelength chip MC can be AxGy, the single-wavelength chip SC can be R, and the three are combined to form ordinary white light. Fig.13 The multi-wavelength chip MC can be in the form of AxBy, AxAy, AxCy, AxIy, etc. The two single-wavelength chips SC1 and SC2 are in the form of G and R respectively, and the three are combined to form ordinary white light. Fig.14 The two multi-wavelength chips MC1 and MC2 are in AxCy and BxGy form respectively, and the single-wavelength chip SC is in R form. The combination of the three forms full-spectrum white light.

[0091] It should be noted that in the above example, the LED chip group CG may also include multi-wavelength chips MC or single-wavelength chips SC of any other wavelength band to improve the continuity of the spectrum of white light generated by the LED chip group CG. For example, the two multi-wavelength chips MC are in the form of AxGy and BxCy, and the two single-wavelength chips SC are in the form of Y and R, forming full-spectrum white light. For another example, see Fig.15 The two multi-wavelength chips MC1 and MC2 are in AxRy and AxCy form respectively, and the three single-wavelength chips SC1, SC2 and SC3 are in B, G, and R form respectively, forming high-quality full-spectrum white light.

[0092] As a fourth possible embodiment, see Fig.16 , the light emitting diode chip group CG also includes at least one color conversion material 114 arranged on the multi-wavelength chip MC, and each color conversion material 114 generates light of a single wavelength. The color conversion material 114 is arranged on the light-emitting side of the multi-wavelength chip MC and completely covers the multi-wavelength chip MC. The color conversion material 114 can convert light into red light, yellow light, green light, etc., and the light contains only one wavelength. The color conversion material 114 can be added to the packaging glue, and it can be arranged on the light-emitting surface of the chip during packaging, or it can be formed into a film and attached to the light-emitting surface of the chip. Multiple color conversion materials 114 can be arranged on each multi-wavelength chip MC. The color conversion material 114 can be a quantum dot material or a fluorescent material, and the wavelength band corresponding to the light converted by the color conversion material 114 includes a blue band, a green band, a cyan band, a yellow band, a red band or an infrared band. For example, the color conversion material 114 is potassium fluorosilicate (KSF) phosphor (i.e., red phosphor), aluminate red phosphor, aluminate green phosphor, europium-doped blue phosphor, yellow phosphor, etc.

[0093] Among them, at least one multi-wavelength chip MC and at least one color conversion material 114 cooperate to generate white light. There are two first complementary band lights or three second complementary band lights in the light generated by at least one multi-wavelength chip MC and the light converted by at least one color conversion material 114. The two first complementary band lights / three second complementary band lights can be mixed to form white light, and the form of other lights is not limited.

[0094] In some possible implementations, there are two first complementary wavelength band lights in the light converted by at least one multi-wavelength chip MC and at least one color conversion material 114, and one of the two first complementary wavelength band lights is generated by the color conversion material 114. In this way, the light generated by a multi-wavelength chip MC and the light after passing through a color conversion material 114 are mixed to generate white light, for example. Fig.17The multi-wavelength chip MC can be in the form of AxAy, AxBy, etc., and the color conversion material 114 can be a yellow conversion material, that is, the light after passing through the color conversion material 114 is yellow light.

[0095] In some other possible implementations, there are three second complementary wavelength band lights in the light converted by at least one multi-wavelength chip MC and at least one color conversion material 114, and one or two of the three second complementary wavelength band lights are generated by the color conversion material 114. In this way, the light generated by one multi-wavelength chip MC and the light after passing through one color conversion material 114 can be mixed to generate white light, the light generated by two multi-wavelength chips MC and the light after passing through one color conversion material 114 can be mixed to generate white light, the light generated by one multi-wavelength chip MC and the light after passing through two color conversion materials 114 can be mixed to generate white light, and the light generated by two multi-wavelength chips MC and the light after passing through two color conversion materials 114 can form white light in various forms, so as to provide various combinations of white light solutions and provide diversity of white light solutions.

[0096] For example, see Fig.18 , a color conversion material 114 is correspondingly arranged on a multi-wavelength chip MC, the light of the first wavelength band and the light of the second wavelength band of the multi-wavelength chip MC are respectively located in the blue wavelength band and the green wavelength band, and the corresponding light converted by the color conversion material 114 is located in the red wavelength band, that is, the multi-wavelength chip MC is in the form of BxGy, and the color conversion material 114 is a red conversion material to form high-quality full-spectrum white light. For example, two color conversion materials 114 are correspondingly arranged on a multi-wavelength chip MC, and the light of the multi-wavelength chip MC includes blue light, for example, see Fig.19 , the multi-wavelength chip MC is in AxBy form, and the corresponding color conversion material 114 is a red conversion material and a green conversion material. Fig.21 At least one of the two multi-wavelength chips MC1 and MC2 is provided with a color conversion material 114, and the two multi-wavelength chips MC1 and MC2 are in the form of AxBy and CxGy respectively, and the corresponding color conversion material 114 is a red conversion material. The red conversion material can be located on the multi-wavelength chip MC1, or, as Fig. 20 As shown, the color conversion material 114 is located on the multi-wavelength chip MC2, and may also be located on both the multi-wavelength chip MC1 and the multi-wavelength chip MC2. The position of the color conversion material 114 is not limited in the embodiment of the present application.

[0097] It should be noted that the color conversion material 114 can improve the spectral continuity of the white light formed by the light-emitting diode chip group, and the color conversion material 114 can cooperate with the multi-wavelength chip MC to produce white light. The color conversion material 114 can also be set on the multi-wavelength chip MC that can independently produce white light, or on two multi-wavelength chips MC that can produce white light, or on the multi-wavelength chip MC that can produce white light and the single-wavelength chip SC. In addition, the color conversion material 114 can be converted into light that cooperates with the multi-wavelength chip MC / single-wavelength chip SC, and can also be converted into other light.

[0098] For example, if the multi-wavelength chip MC is in the form of AxYy, a green conversion material, a yellow conversion material, and a red conversion material may be arranged on the multi-wavelength chip MC, and a green conversion material and a red conversion material, a yellow conversion material and a red conversion material, or a green and yellow conversion material may be arranged, and a green conversion material, a red conversion material, and a yellow conversion material may be arranged. For another example, if the multi-wavelength chip MC is in the form of AxGy, a yellow conversion material and a red conversion material may be arranged on the multi-wavelength chip MC, and a green conversion material and a red conversion material may be arranged, a yellow conversion material and a red conversion material may be arranged, a green conversion material and a yellow conversion material may be arranged, and a green conversion material, a red conversion material, and a yellow conversion material may be arranged.

[0099] For another example, if the multi-wavelength chip MC is in the form of AxCy, a yellow conversion material may be provided on the multi-wavelength chip MC, and a green conversion material and a red conversion material, a yellow conversion material and a red conversion material, a green conversion material and a yellow conversion material may also be provided, or a green conversion material, a red conversion material and a yellow conversion material may also be provided. For another example, if two multi-wavelength chips MC are in the form of AxGy and AxRy, respectively, a green conversion material, a yellow conversion material, a red conversion material may be provided on at least one multi-wavelength chip MC, and a green conversion material and a red conversion material, a yellow conversion material and a red conversion material, or a green and yellow conversion material may also be provided, and a green conversion material, a red conversion material and a yellow conversion material may also be provided.

[0100] As a fifth possible embodiment, at least one single-wavelength chip SC and at least one color conversion material are further included, each single-wavelength chip SC generates light of a single wavelength, each color conversion material 114 generates light of a single wavelength, and the color conversion material 114 is arranged on the single-wavelength chip SC and / or the multi-wavelength chip MC. The color conversion material 114 can be arranged on the single-wavelength chip SC, the multi-wavelength chip MC, or on both the single-wavelength chip SC and the multi-wavelength chip MC. Exemplarily, the color conversion material 114 is arranged on all the single-wavelength chips SC and the multi-wavelength chips MC.

[0101] The color conversion materials 114 at different positions can be the same or different. For example, both the single-wavelength chip SC and the multi-wavelength chip MC are provided with green conversion materials. The light converted by the color conversion material and the light generated by the single-wavelength chip SC can be in the same band or in different bands. When they are in the same band, the color conversion material and the single-wavelength chip SC can enrich the wavelength of white light and improve the continuity of the white light spectrum.

[0102] In some possible implementations, at least one multi-wavelength chip MC, at least one single-wavelength chip SC, and at least one color conversion material cooperate to generate white light. There are three second complementary wavelength band lights in the light generated by at least one multi-wavelength chip MC, the light generated by at least one single-wavelength chip SC, and the light converted by at least one color conversion material 114. The three second complementary wavelength band lights are generated by the single-wavelength chip SC, the multi-wavelength chip MC, and the color conversion material 114, respectively.

[0103] For example, see Fig. 22 , the light generated by the multi-wavelength chip MC is in the purple band and the green band, that is, the multi-wavelength chip MC is in the AxBy form. The light generated by the single-wavelength chip SC is in the green band, that is, the single-wavelength chip SC is in the G form. The light converted by the color conversion material 114 is in the red band, that is, the color conversion material 114 is a red conversion material. The color conversion material 114 can be set arbitrarily, for example, set on the multi-wavelength chip MC.

[0104] In some other possible implementations, there are three second complementary band lights among the light generated by at least one multi-wavelength chip MC, the light generated by at least one single-wavelength chip SC, and the light converted by at least one color conversion material 114, and two first complementary band lights are generated by at least one multi-wavelength chip MC, the color conversion material is arranged on the single-wavelength chip SC, and the light converted by the color conversion material and the light generated by the single-wavelength chip SC are in the same band.

[0105] For example, see Fig.23 , the light generated by the multi-wavelength chip MC is in the green band and the blue band, that is, the multi-wavelength chip MC is in the BxGy form. The light generated by the single-wavelength chip SC is in the red band, that is, the single-wavelength chip SC is in the R form. The color conversion material 114 is arranged on the single-wavelength chip SC, and the light it converts is in the red band, that is, the color conversion material 114 is a red conversion material to enrich the number of wavelengths of light in the red band.

[0106] As another example, the light generated by the multi-wavelength chip MC is in the purple band and the cyan band, that is, the multi-wavelength chip MC is in the AxCy form. The light generated by the single-wavelength chip SC1 is in the green band, that is, the single-wavelength chip SC1 is in the G form, and the light generated by the single-wavelength chip SC2 is in the red band, that is, the single-wavelength chip SC2 is in the R form. The light converted by the color conversion material 114 is in the red band, that is, the color conversion material 114 is a red conversion material. The color conversion material 114 is disposed on the single-wavelength chip SC2.

[0107] In other possible implementations, there are two first complementary wavelength band lights among the light generated by at least one multi-wavelength chip MC, the light generated by at least one single-wavelength chip SC, and the light converted by at least one color conversion material 114, and one of the complementary wavelength band lights is generated by at least one multi-wavelength chip MC, the color conversion material is disposed on the single-wavelength chip SC, and the light converted by the color conversion material and the light generated by the single-wavelength chip SC are in the same wavelength band. One of the two first complementary wavelength band lights is in the ultraviolet wavelength band, the purple wavelength band, the blue wavelength band, or the cyan wavelength band, and the other is in the yellow wavelength band.

[0108] For example, see Fig.25 , the light generated by the multi-wavelength chip MC is in the purple band and the green band, that is, the multi-wavelength chip MC is in the AxGy form. The light generated by the single-wavelength chip SC is in the yellow band, that is, the single-wavelength chip SC is in the Y form. The color conversion material 114 is arranged on the single-wavelength chip SC, and the light it converts is in the yellow band, that is, the color conversion material 114 is a yellow conversion material to enrich the number of wavelengths of the light in the yellow band.

[0109] It can be understood that in various implementations, the color conversion material 114 and the single wavelength chip SC can improve the spectral continuity of the white light formed by the light-emitting diode chip group, that is, the color conversion material 114 and the single wavelength chip SC can be used in combination with a combination that independently generates white light. For example, the multi-wavelength chip MC1 is in the form of GxYy, the single wavelength chip SC is in the form of A, and the color conversion material 114 is a red conversion material.

[0110] In some possible embodiments, see Figure 25 to Figure 29, the first light-emitting layer 106a in the multi-wavelength chip MC includes at least one first layer 201, and the second light-emitting layer 106b includes at least one second layer 202. At least one first layer 201 and at least one second layer 202 are stacked in sequence, and each first layer 201 has a wavelength, and each second layer 202 has a wavelength. The number of first layers 201 is consistent with the number of wavelengths contained in the light of the first wavelength band, and each first layer 201 emits a wavelength. The number of second layers 202 is consistent with the number of wavelengths contained in the light of the second wavelength band, and each second layer 202 emits a wavelength. Among them, the first layer 201 and the second layer 202 are formed by an epitaxial process, and the first layer 201 and the second layer 202 can both be quantum wells (QM) or multiple quantum wells (MQW). Fig.28 As shown, the quantum well includes a barrier layer 205 and a potential well layer 206. Fig.29 As shown, the multiple quantum well includes a plurality of cross-stacked barrier layers 205 and a plurality of potential well layers 206 .

[0111] It should be noted that when the first light-emitting layer 106a includes two or more first layers 201, the holes generated by the P-type semiconductor layer 107 can reach all the first layers 201, and each first layer 201 can be electroluminescent. The light generated by the first layer 201 will be emitted from each surface, thereby stimulating the photoluminescence of the material with a larger wavelength, so that except for the first layer 201 with the smallest wavelength, the other first layers 201 have two luminescence mechanisms of electroluminescence and photoluminescence. The holes in the P-type semiconductor layer 107 are difficult to be transmitted to the second layer 202, so that each second layer 202 has only one luminescence mechanism of photoluminescence.

[0112] In some possible examples, in the multi-wavelength chip MC, except for a first layer 201 close to the second layer 202, the sum of the thicknesses of the remaining first layers 201 is less than the hole diffusion length, and the sum of the thicknesses of the first layers 201 is greater than or equal to the hole diffusion length, so that a hole isolation region is formed between adjacent first layers 201 and second layers 202, and the hole isolation region may be an interface. Fig.25 As shown, the thickness T1 is less than the hole diffusion length, and the thickness T2 is greater than or equal to the hole diffusion length. In this way, the holes generated by the P-type semiconductor layer 107 can reach each first layer 201, so that each first layer 201 can electroluminesce. The holes generated by the P-type semiconductor layer 107 cannot reach each second layer 202, so each second layer 202 cannot electroluminesce.

[0113] In some other possible examples, in the multi-wavelength chip MC, a first hole blocking layer 203 is disposed between adjacent first layers 201 and second layers 202, and the sum of the thicknesses of the remaining first layers 201 except for one first layer 201 close to the second layer 202 is less than the hole diffusion length, and the sum of the thicknesses of the first layers 201 and the first hole blocking layer 203 is greater than the hole diffusion length, so that a hole isolation region is formed between the adjacent first layers 201 and the second layers 202, and the hole isolation region may be an interface. Fig.26 As shown, the thickness T1 is less than the hole diffusion length, and the thickness T3 is greater than or equal to the hole diffusion length, so that the holes generated by the P-type semiconductor layer 107 can reach each first layer 201, so that each first layer 201 can electroluminesce. The holes generated by the P-type semiconductor layer 107 cannot pass through the first hole blocking layer 203, that is, the holes generated by the P-type semiconductor layer 107 cannot reach each second layer 202, and each second layer 202 cannot electroluminesce. The material of the first hole blocking layer 203 can be a silicon-doped gallium nitride material.

[0114] In some other possible examples, a second hole blocking layer 204 is provided between two adjacent second layers 202 to block holes and ensure that holes do not reach the second layer 202 away from the P-type semiconductor. The material of the first hole blocking layer 203 can be a silicon-doped gallium nitride material. As a preferred implementation, refer to Fig.29 A second hole blocking layer 204 is disposed between each two adjacent second layers 202, and a first hole blocking layer 203 is disposed between adjacent first layers 201 and second layers 202. In this way, the hole blocking effect is better, the second layers 202 will not emit electroluminescence, the spectrum is stable, and will not fluctuate with the change of current.

[0115] See also Fig.30 and Fig.31The multi-wavelength chip MC provided in the embodiment of the present application further includes: a buffer layer 102, an N-type electrode 103, a P-type electrode 105, a current spreading layer 108, a reflective layer 109 and a first insulating layer 110; the buffer layer 102 and the N-type semiconductor layer 104 are stacked, the second light-emitting layer 106b is arranged on the side of the N-type semiconductor layer 104 away from the buffer layer 102, the first light-emitting layer 106a is arranged on the side of the second light-emitting layer 106b away from the N-type semiconductor layer 104, and the P-type semiconductor layer 107 is arranged on the side of the first light-emitting layer 106a away from the buffer layer 102; the current spreading layer 102 is stacked on the N-type semiconductor layer 104, the second light-emitting layer 106b is arranged on the side of the N-type semiconductor layer 104 away from the buffer layer 102, and the P-type semiconductor layer 107 is arranged on the side of the first light-emitting layer 106a away from the buffer layer 102. 08 is in contact with a side of the P-type semiconductor layer 107 away from the buffer layer 102, the N-type electrode 103 is in contact with the N-type semiconductor layer 104, and the P-type electrode 105 is in contact with both the P-type semiconductor layer 107 and the current spreading layer 108; the first insulating layer 110 is arranged on the side of the current spreading layer 108 away from the buffer layer 102; the reflective layer 109 is arranged on the side of the buffer layer 102 away from the first insulating layer 110, or the reflective layer 109 is arranged on the side of the first insulating layer 110 away from the buffer layer 102, and the second insulating layer 111 is also arranged on the side of the reflective layer 109 away from the buffer layer 102.

[0116] Specifically, the N-type semiconductor layer 104 is disposed on one side surface of the buffer layer 102, the second light-emitting layer 106b is disposed on the surface of the N-type semiconductor away from the buffer layer 102, the first light-emitting layer 106a is disposed on the surface of the second light-emitting layer 106b away from the buffer layer 102, and the P-type semiconductor layer 107 is disposed on the surface of the first light-emitting layer 106a away from the buffer layer 102. The N-type semiconductor layer 104 is also in contact with the N-type electrode 103, and the P-type semiconductor layer 107 is in contact with the P-type electrode 105. In the power-on state, an electric field is formed between the N-type electrode 103 and the P-type electrode 105. The first insulating layer 110 is disposed on the side of the P-type semiconductor away from the buffer layer 102, and it can be in contact with the P-type semiconductor, or other film layers, such as the current spreading layer 108, can be disposed.

[0117] Optionally, see Fig.30 , the reflective layer 109 is arranged on the side of the buffer layer 102 away from the first insulating layer 110, so that the light emitting direction of the multi-wavelength chip MC is away from the direction where the buffer layer 102 is located. Fig.31 As shown, the reflective layer 109 is arranged on the side of the first insulating layer 110 away from the buffer layer 102, and the side of the reflective layer 109 away from the buffer layer 102 is also provided with a second insulating layer 111. In this way, the light emitting direction of the multi-wavelength chip MC is toward the direction where the buffer layer 102 is located, that is, Fig.31 The downward arrow direction is shown in the figure.

[0118] The material of the buffer layer 102 may be one or more of gallium nitride, aluminum gallium nitride and aluminum indium gallium nitride, and the thickness of the buffer layer 102 may be 10-40 nanometers. The material of the N-type semiconductor layer 104 may be N-type doped gallium nitride, and the material of the P-type semiconductor layer 107 may be P-type doped gallium nitride. The material of the first insulating layer 110 may be silicon oxide or silicon nitride. The material of the current spreading layer 108 may be a transparent conductive material (indium tin oxide, ITO) or silver, etc., which can improve the distribution ability of the P-type electrode 105 and allow the holes to be distributed as evenly as possible in the area where the P-type semiconductor layer 107 is located.

[0119] Reference Fig.30 On the basis of the above multi-wavelength chip MC, the multi-wavelength chip MC further includes a substrate 101, which is disposed on a side of the buffer layer 102 away from the first insulating layer 110. The material of the substrate 101 can be a composite of one or more of sapphire, gallium nitride, aluminum nitride, silicon and silicon carbide. When the reflective layer 109 is disposed on a side of the buffer layer 102 away from the first insulating layer 110, the reflective layer 109 is disposed on a side of the substrate 101 away from the buffer layer 102. Fig.30 The light emitting direction is the upward direction indicated by the arrow in the figure, forming a multi-wavelength chip MC with a positive structure. Fig.31 The light emitting direction is the downward direction indicated by the arrow in the figure, forming a multi-wavelength chip MC with a flip-chip structure.

[0120] Reference Fig.32 As shown, the multi-wavelength chip MC may further include a bonding substrate 112, a binding layer 113, an N-type electrode 103, a P-type electrode 105, a reflective layer 109 and a first insulating layer 110; the bonding substrate 112 and the binding layer 113 are sequentially arranged on the P-type electrode 105, the P-type semiconductor layer 107 is arranged on a side of the binding layer 113 away from the bonding substrate 112, and is in contact with the binding layer 113; the first light emitting layer 106a is arranged on a side of the P-type semiconductor layer 107 away from the bonding substrate 11 2, the second light-emitting layer 106b is arranged on the side of the first light-emitting layer 106a away from the bonding substrate 112, the N-type semiconductor layer 104 is arranged on the side of the light-emitting layer away from the bonding substrate 112, and the N-type electrode 103 contacts the side of the N-type semiconductor layer 104 away from the bonding substrate 112; the first insulating layer 110 is arranged on the side of the N-type semiconductor layer 104 away from the bonding substrate 112, and the N-type electrode 103 contacts both the N-type semiconductor layer 104 and the first insulating layer 110. The reflective layer 109 is arranged on the side of the P-type semiconductor layer 107 close to the bonding substrate 112. The multi-wavelength chip MC forms a multi-wavelength chip MC with a vertical structure, and its light output direction can be Fig.32 The arrow in the middle points in the upward direction.

[0121] See also Fig.33 and Fig.34The embodiment of the present application also provides a display backlight module, including a circuit board and the above-mentioned light-emitting diode chipset, the circuit board can be a PCB circuit board, and can also be a driving backplane, the light-emitting diode chipset is arranged on the circuit board, and is electrically connected to the circuit board. The above-mentioned light-emitting diode chipset can be connected to the circuit board after packaging, or it can be connected to the circuit board before packaging. The display backlight module has a wider color gamut, and can improve reliability and service life, and reduce costs.

[0122] As an achievable implementation, a plurality of LED chip groups may be provided on the circuit board, and the plurality of LED chip groups may be arranged in an array on the circuit board. The circuit board may provide driving current for the plurality of LED chip groups, thereby driving the plurality of LED chip groups to emit light. Fig.33 As shown, LED chip group CG1, LED chip group CG2, LED chip group CG3 and LED chip group CG4 are arranged on the circuit board 300. In some examples, there are 5, 6 or more LED chip groups. The number of LED chip groups can be adjusted, and this embodiment does not limit this.

[0123] As another possible implementation, the circuit board 300 includes a driving substrate 301 and a plurality of driving units 302, one driving unit 302 is electrically connected to at least one light emitting diode chip group, and the plurality of driving units 302 are electrically connected to the driving substrate 301. The driving unit 302 and the driving substrate 301 may also be TFT and CMOS. Fig.34 As shown, the LED chip group CG1 and the LED chip group CG2 are electrically connected to one driving unit 302, and the LED chip group CG3 and the LED chip group CG4 are connected to another driving unit 302, and both driving units 302 are electrically connected to the driving substrate 301. The number of driving units 302 and the number of LED chip groups connected to each driving unit 302 can be adjusted, and this embodiment also does not impose any limitation on this.

[0124] The embodiment of the present application also provides a lighting device, including a circuit board and the above-mentioned light-emitting diode chipset, the light-emitting diode chipset is arranged on the circuit board and electrically connected to the circuit board. The lighting device can be a lamp, such as a street lamp, a decorative lamp, etc., and the circuit board can be a printed circuit board (PCB) or a flexible printed circuit board (FPC).

[0125] Among them, a plurality of light-emitting diode chip groups can be arranged on the circuit board in an array, and the circuit board drives the plurality of light-emitting diode chip groups to emit light. The lighting device can obtain a higher color rendering index, a wider color gamut and full-spectrum lighting, improve reliability and service life, and reduce costs.

[0126] In the description of the embodiments of the present application, it should be understood that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, or it can be indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. The orientation or position relationship indicated by the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc. is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise precisely and specifically specified.

[0127] The terms "first", "second", "third", "fourth", etc. (if any) in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0128] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the embodiments of the present application, rather than to limit them. Although the embodiments of the present application have been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. These modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting diode chipset, characterized in that: The light-emitting diode chip group generates white light and includes at least one multi-wavelength chip, wherein the multi-wavelength chip includes an N-type semiconductor layer, a P-type semiconductor layer, and a first light-emitting layer and a second light-emitting layer disposed between and stacked on the N-type semiconductor layer and the P-type semiconductor layer, wherein the first light-emitting layer is located on a side of the second light-emitting layer close to the P-type semiconductor layer; The first light-emitting layer generates light of a first wavelength band in an electroluminescent manner, and the light of the first wavelength band excites the second light-emitting layer to generate light of a second wavelength band, and the number of wavelengths contained in the light of the first wavelength band and the light of the second wavelength band are both greater than or equal to 1 and less than or equal to 10; A hole isolation region is present between the first light-emitting layer and the second light-emitting layer.

2. The light emitting diode chipset according to claim 1, characterized in that: The first band includes one of the ultraviolet band, the purple band, the blue band, the cyan band or the green band, the second band includes one of the ultraviolet band, the purple band, the blue band, the cyan band, the green band, the yellow band, the red band or the infrared band, and at least one wavelength of the light generated by the first light-emitting layer is smaller than each wavelength of the light generated by the second light-emitting layer.

3. The light emitting diode chipset according to claim 1, characterized in that: The light generated by the light emitting diode chip group includes at least two first complementary wavelength band lights, the two first complementary wavelength band lights are mixed to form the white light, one of the wavelength bands corresponding to the two first complementary wavelength band lights is located in the ultraviolet wavelength band, the purple wavelength band, the blue wavelength band or the cyan wavelength band, and the other is located in the yellow wavelength band; Alternatively, the light generated by the light-emitting diode chip group includes at least three second complementary band lights, and the three second complementary band lights are mixed to form the white light, and one of the bands corresponding to the three second complementary band lights is located in the ultraviolet band, the purple band, the blue band or the cyan band, another is located in the green band, and the last one is located in the red band.

4. The light emitting diode chipset according to claim 1, characterized in that: The light of the first wavelength band and the light of the second wavelength band generated by the same multi-wavelength chip are mixed to form the white light.

5. The light emitting diode chipset according to claim 1, characterized in that: At least two of the multi-wavelength chips cooperate to generate the white light.

6. The light emitting diode chipset according to claim 1, characterized in that: Also includes at least one single wavelength chip, each of the single wavelength chips generates light of a single wavelength; At least one of the multi-wavelength chips and at least one of the single-wavelength chips cooperate to generate the white light.

7. The light emitting diode chipset according to claim 1, characterized in that: Also included is at least one color conversion material disposed on the multi-wavelength chip, each of the color conversion materials generating light of a single wavelength; At least one of the multi-wavelength chips and at least one of the color conversion materials cooperate to generate the white light.

8. The light emitting diode chipset according to claim 7, characterized in that: One of the color conversion materials is correspondingly arranged on one of the multi-wavelength chips. The light of the first wavelength band and the light of the second wavelength band of the multi-wavelength chip are respectively located in the blue wavelength band and the green wavelength band, and the corresponding light converted by the color conversion material is located in the red wavelength band.

9. The light emitting diode chipset according to claim 1, characterized in that: It also includes at least one single-wavelength chip and at least one color conversion material, each of the single-wavelength chips generates light of a single wavelength, each of the color conversion materials generates light of a single wavelength, and the color conversion material is arranged on the single-wavelength chip and / or the multi-wavelength chip; At least one of the multi-wavelength chips, at least one of the single-wavelength chips, and at least one of the color conversion materials cooperate to generate the white light.

10. The light emitting diode chipset according to claim 8 or 9, characterized in that: The color conversion material includes quantum dot material or fluorescent material, and the light converted by the color conversion material is in the blue band, green band, cyan band, yellow band, red band or infrared band.

11. The light emitting diode chipset according to any one of claims 1 to 9, characterized in that: The color temperature of the white light is 1600-18000, the color rendering index of the white light is 90-100, the x value in the color coordinates of the white light is greater than or equal to 0.26 and less than or equal to 0.6, and the y value is greater than or equal to 0.28 and less than or equal to 0.

52.

12. The light emitting diode chipset according to any one of claims 1 to 9, characterized in that: The first light-emitting layer in the multi-wavelength chip includes at least one first layer, and the second light-emitting layer includes at least one second layer. The at least one first layer and the at least one second layer are stacked in sequence, each of the first layers has one of the wavelengths, and each of the second layers has one of the wavelengths.

13. The light emitting diode chipset according to claim 12, characterized in that: Except for one first layer close to the second layer, the sum of thicknesses of the other first layers of the multi-wavelength chip is less than the hole diffusion length, and the sum of thicknesses of the first layers is greater than or equal to the hole diffusion length to form the hole isolation region.

14. The light emitting diode chipset according to claim 13, characterized in that: A first hole blocking layer is disposed between adjacent first layers and second layers in the multi-wavelength chip, and the sum of thicknesses of the remaining first layers except for one first layer close to the second layer is less than the hole diffusion length, and the sum of thicknesses of the first layers and the first hole blocking layer is greater than or equal to the hole diffusion length, so as to form the hole isolation region; And / or, a second hole blocking layer is disposed between two adjacent second layer layers.

15. The light emitting diode chipset according to any one of claims 1 to 9, characterized in that: The multi-wavelength chip further includes: a buffer layer, an N-type electrode, a P-type electrode, a current spreading layer, a reflective layer and a first insulating layer; The buffer layer and the N-type semiconductor layer are stacked, the second light-emitting layer is arranged on a side of the N-type semiconductor layer away from the buffer layer, the first light-emitting layer is arranged on a side of the second light-emitting layer away from the N-type semiconductor layer, and the P-type semiconductor layer is arranged on a side of the first light-emitting layer away from the buffer layer; The current spreading layer is in contact with a side of the P-type semiconductor layer away from the buffer layer, the N-type electrode is in contact with the N-type semiconductor layer, and the P-type electrode is in contact with both the P-type semiconductor layer and the current spreading layer; The first insulating layer is arranged on a side of the current spreading layer away from the buffer layer; The reflective layer is arranged on a side of the buffer layer away from the first insulating layer, or the reflective layer is arranged on a side of the first insulating layer away from the buffer layer, and a second insulating layer is further arranged on a side of the reflective layer away from the buffer layer.

16. The light emitting diode chipset according to claim 15, characterized in that: The multi-wavelength chip further includes a substrate, which is disposed on a side of the buffer layer away from the first insulating layer; When the reflective layer is disposed on a side of the buffer layer away from the first insulating layer, the reflective layer is disposed on a side of the substrate away from the buffer layer.

17. The light emitting diode chipset according to any one of claims 1 to 9, characterized in that: The multi-wavelength chip also includes a bonding substrate, a binding layer, an N-type electrode, a P-type electrode, a reflective layer and a first insulating layer; The bonding substrate and the binding layer are sequentially arranged on the P-type electrode, and the P-type semiconductor layer is arranged on a side of the binding layer away from the bonding substrate and in contact with the binding layer; The first light-emitting layer is arranged on a side of the P-type semiconductor layer away from the bonding substrate, the second light-emitting layer is arranged on a side of the first light-emitting layer away from the bonding substrate, the N-type semiconductor layer is arranged on a side of the second light-emitting layer away from the bonding substrate, the first insulating layer is arranged on a side of the N-type semiconductor away from the bonding substrate, and the N-type electrode is in contact with both the N-type semiconductor layer and the first insulating layer; The reflective layer is arranged on a side of the P-type semiconductor layer close to the bonding substrate.

18. A display backlight module, characterized in that: It comprises a driving backplane and a light-emitting diode chipset as claimed in any one of claims 1 to 17, wherein the light-emitting diode chipset is arranged on the driving backplane and is electrically connected to the driving backplane.

19. A lighting device, characterized in that: It comprises a circuit board and the light-emitting diode chip group according to any one of claims 1 to 17, wherein the light-emitting diode chip group is arranged on the circuit board and electrically connected to the circuit board.

Images