Memory based on electric control interlayer anti-ferromagnetic Nell vector flipping and implementation method thereof

Abstract

The invention discloses a memory based on electric control interlayer anti-ferromagnetic Nell vector flipping and an implementation method thereof. On the basis of the synergistic effect of the orbit transfer torque and the spin transfer torque, the memory for electrically controlling the interlayer antiferromagnetic neel vector flipping is realized, and the memory has remarkable advantages; according to the invention, read-write paths are separated, so that lower power consumption and higher operation speed can be realized; the antiferromagnetic material has high stability in an external field, a stray field is almost zero, and the antiferromagnetic material has high-frequency magnetization overturning capability, so that the antiferromagnetic material has huge application potential in the aspect of an ultrafast high-density magnetic memory device; when the electric control interlayer antiferromagnetic neel vector flipping device based on the synergistic effect of the orbital transfer torque and the spin transfer torque realizes magnetization flipping, not only is a more efficient and low-power-consumption solution provided, but also the structure is simple and the integration is easy. The method has huge potential and application prospects in modern storage and logic device application, and shows huge potential in the field of antiferromagnetic spintronics.

Description

Technical Field

[0001] The invention relates to data storage technology, and in particular to a memory based on electrically controlled interlayer antiferromagnetic Néel vector reversal and a realization method thereof. Background Art

[0002] The microscopic magnetic moments of antiferromagnetic materials are orderly staggered antiparallel arrangement, which makes the material not show a net magnetic moment on a macroscopic level, but form an internal magnetic order. This characteristic gives antiferromagnetic materials the intrinsic ability to resist magnetic interference, giving them a significant advantage in building stable magnetic storage devices.

[0003] Magnetic Random Access Memory (MRAM) is a future-oriented storage technology. Relying on its outstanding advantages such as non-volatility, high integration and strong stability, MRAM will play an important role in the cutting-edge development of many electronic devices such as artificial intelligence, IoT device storage, storage and computing integration, and automotive memory. The development of MRAM will bring higher performance, lower energy consumption and stronger stability to future electronic devices, thus playing an important role in the wave of digital transformation.

[0004] Compared with MRAM devices based on ferromagnetic materials, MRAM devices based on antiferromagnetic materials are more stable when storing data and are less susceptible to changes in external magnetic fields, which improves the reliability of data and the durability of memory. At the same time, the zero stray field characteristics of antiferromagnetic materials allow electronic devices based on these materials to operate effectively at extremely high integration levels. In traditional magnetic storage technology, high-density integration may cause interference between adjacent storage cells, affecting the accuracy of data. The zero stray field characteristics of antiferromagnetic materials effectively avoid this problem, allowing more storage cells to be integrated in a smaller space without sacrificing performance, which is a huge advantage for electronic devices that pursue higher performance and smaller size.

[0005] As an order parameter of antiferromagnetic materials, the reversal of the Née vector is of great significance for the realization of new storage and logic devices such as MRAM. The reversal of the Née vector in antiferromagnetic systems can be achieved in many ways. For example, in the two-dimensional antiferromagnetic material MnPSe3, pressure strain in different directions can rotate the Née vector, which provides the possibility of directly controlling the internal microscopic magnetic order of two-dimensional antiferromagnetic materials. Although stress-induced reversal can achieve the control of the Née vector to a certain extent, it is a technical challenge to accurately control the application and maintenance of stress, and long-term stress may cause material fatigue, affecting the stability and life of the device. Reversing the Née vector in antiferromagnetic materials through current induced torque is a more common method. Like ferromagnetic materials, there is an energy barrier of magnetic anisotropy energy between the stable orientations of local magnetic moments in antiferromagnetic materials. Reversing the Née vector through current induced torque requires that the generated torque can cross this energy barrier. Spin transfer torque (STT) and spin orbit torque (SOT) are two typical types of current-induced torques used to flip magnetization in spin electronics.

[0006] Although the intrinsic anti-magnetic interference property of antiferromagnetic materials provides a great advantage for constructing stable magnetic memory devices, it also makes the regulation of magnetic order more complicated. New methods for regulating the order parameters of antiferromagnetic materials are an important basis for developing spintronic devices based on antiferromagnetic materials. Summary of the invention

[0007] In view of the above problems existing in the prior art, the present invention proposes a memory based on electrically controlled interlayer antiferromagnetic Néel vector reversal and an implementation method thereof.

[0008] Interlayer antiferromagnetic materials refer to magnetic materials that exhibit antiferromagnetic coupling between adjacent layers. The atomic magnetic moments between different layers of interlayer antiferromagnetic materials are arranged in antiparallel, resulting in no net magnetic moment on a macroscopic scale; while the atoms within the layer are ferromagnetically coupled, resulting in their atomic magnetic moments being arranged in the same direction.

[0009] One object of the present invention is to provide a memory based on electrically controlled interlayer antiferromagnetic Néel vector reversal.

[0010] The memory based on electrically controlled interlayer antiferromagnetic Nye vector reversal of the present invention comprises: a substrate, an insulating dielectric layer, a low-symmetry strong spin-orbit coupling material layer, an interlayer antiferromagnetic layer, a source electrode, a drain electrode, a measuring electrode, a top gate and a back gate; wherein the back gate is formed on the back side of the substrate; an insulating dielectric layer is formed on the upper surface of the substrate, and a source electrode, a drain electrode and a pair of measuring electrodes arranged in parallel are formed on the insulating dielectric layer, the source electrode and the drain electrode are respectively located on both sides, and the pair of measuring electrodes are located between the source electrode and the drain electrode; the low-symmetry strong spin-orbit coupling material layer is located on the insulating dielectric layer; On the dielectric layer, a low-symmetry strong spin-orbit coupling material layer is in electrical contact with a source-drain electrode and a pair of measuring electrodes, an interlayer antiferromagnetic layer is formed on the low-symmetry strong spin-orbit coupling material layer, and the low-symmetry strong spin-orbit coupling material layer and the interlayer antiferromagnetic layer constitute a heterojunction; a top gate is formed on the heterojunction, the top gate includes a top gate insulating layer and a top electrode located on the top gate insulating layer, the top gate insulating layer of the top gate completely covers the heterojunction to encapsulate and protect the heterojunction below; the top electrode of the top gate covers the channel of the heterojunction, that is, the top electrode covers the path of current flowing through the heterojunction;

[0011] The back gate is connected to the positive electrode of the first DC voltage source, the negative electrode of the first DC voltage source is grounded, the top electrode of the top gate is connected to the positive electrode of the second DC voltage source, and the negative electrode of the second DC voltage source is grounded; when writing current, the source electrode is connected to the positive electrode of the DC current source, the negative electrode of the DC current source is grounded, and the drain electrode is grounded; when reading current, the source electrode is connected to the positive electrode of the AC current source, the negative electrode of the AC current source is grounded, and the drain electrode is grounded; in a pair of measuring electrodes, the measuring electrode adjacent to the source electrode is connected to the positive electrode of the voltmeter, and the measuring electrode adjacent to the drain electrode is connected to the negative electrode of the voltmeter;

[0012] The first DC voltage source applies a back gate voltage V B , so that a potential difference is formed between the back gate and the lower surface of the heterojunction, and the second DC voltage source applies a top gate voltage V T , so that a potential difference is formed between the top electrode of the top gate and the upper surface of the heterojunction; through the back gate voltage V B and the top gate voltage V TThe carrier concentration and out-of-plane electric field of the heterojunction are adjusted so that the low-symmetry strong spin-orbit coupling material layer has the highest conversion efficiency from current to spin current and orbital current; a DC current source is used to pass a DC write current through the source-drain electrode. When the write current is passed, the low-symmetry strong spin-orbit coupling material layer has spin current and orbital current with out-of-plane polarization components. The spin current and orbital current lead to spin transfer torque and orbital transfer torque. The direction of the out-of-plane polarization is related to the direction of the write current; the synergistic effect of the orbital transfer torque and the spin transfer torque produces an anti-damping torque with an out-of-plane component; the direction of the out-of-plane anti-damping torque is controlled by controlling the direction of the write current; when the direction of the out-of-plane anti-damping torque is related to the direction of the layer When the atomic magnetic moments in a layer of the nearest neighbor low-symmetry strong spin-orbit coupling material in the inter-antiferromagnetic layer are antiparallel, the out-of-plane anti-damping torque drives the atomic magnetic moment of the nearest layer to reverse, and the inter-layer anti-ferromagnetic coupling makes the atomic magnetic moments of all layers above it follow the reverse direction, thereby realizing the reversal of the Née vector of the inter-layer anti-ferromagnetic layer without the assistance of an external magnetic field, and the Née vector is reversed; the direction of the write current is changed, that is, when the direct current source is passed through the source and drain electrodes to reverse the write current, the directions of the out-of-plane polarization components of the spin current and the orbital current are reversed, realizing the reverse anti-damping torque, and the Née vector of the inter-layer anti-ferromagnetic layer is reversed, that is, the Née vector reversal of the inter-layer anti-ferromagnetic layer is realized without the assistance of an external magnetic field and controlled by the current;

[0013] The AC current source passes the AC reading current I through the source and drain electrodes. v The voltmeter measures the nonlinear longitudinal voltage of the heterojunction by measuring the electrode. The interlayer antiferromagnetic layer has two opposite Néel vectors. The nonlinear longitudinal voltage corresponding to the two opposite Néel vectors is The sign is opposite, so by measuring the nonlinear longitudinal voltage Get the direction of the Née vector of the interlayer antiferromagnetic layer;

[0014] A data storage device is implemented by using a write current as write data and a nonlinear longitudinal voltage as read data.

[0015] The writing current I of the DC current source p In mA level, the write current I p It needs to be greater than the critical current I that can achieve the reversal of the interlayer antiferromagnetic layer Née vector in the heterojunction. c , in different specific systems, I c The values ​​are different, usually in the mA range. The first DC voltage source is -8V to 8V, the second DC voltage is -8V to 8V; the read current I ω The AC frequency is 7~150Hz, usually 13.333Hz to avoid interference from the mains.

[0016] The low-symmetry strong spin-orbit coupling material layer uses tantalum iridium telluride TaIrTe4, niobium iridium telluride NbIrTe4 or tungsten ditelluride WTe2; the thickness is 2 to 10 nm. The interlayer antiferromagnetic layer uses interlayer antiferromagnetic materials, manganese bismuth telluride MnBi2Te4, chromium phosphorus sulfur CrPS4, chromium oxide Cr2O3 or cadmium iodide CrI3; the thickness is 2 to 10 nm.

[0017] The top electrode, back gate electrode, source-drain electrode and measuring electrode of the top gate are all made of conductive metal.

[0018] The insulating dielectric layer is made of SiO2 with a thickness of 280 to 320 nm; the top gate insulating layer is made of hexagonal boron nitride h-BN with a thickness of 20 to 30 nm.

[0019] Another object of the present invention is to provide a method for realizing a memory based on electrically controlled interlayer antiferromagnetic Néel vector reversal.

[0020] The method for realizing a memory based on electrically controlled interlayer antiferromagnetic Nye vector reversal of the present invention comprises the following steps:

[0021] 1) Memory settings:

[0022] A back gate is formed on the back side of the substrate; an insulating dielectric layer is formed on the upper surface of the substrate, and a source electrode, a drain electrode and a pair of measuring electrodes arranged in parallel are formed on the insulating dielectric layer, the source electrode and the drain electrode are respectively located on both sides, and the pair of measuring electrodes are located between the source electrode and the drain electrode; a low-symmetry strong spin-orbit coupling material layer is located on the insulating dielectric layer, the low-symmetry strong spin-orbit coupling material layer is in electrical contact with the source-drain electrode and the pair of measuring electrodes, an interlayer antiferromagnetic layer is formed on the low-symmetry strong spin-orbit coupling material layer, and the low-symmetry strong spin-orbit coupling material layer and the interlayer antiferromagnetic layer constitute a heterojunction; a top gate is formed on the heterojunction, the top gate includes a top gate insulating layer and a top electrode located on the top gate insulating layer, and the top gate insulating layer of the top gate needs to completely cover the heterojunction to encapsulate and protect the heterojunction below; the top electrode of the top gate covers the channel of the heterojunction, that is, the top electrode covers the path through which current flows through the heterojunction;

[0023] 2) The back gate is connected to the positive electrode of the first DC voltage source, the negative electrode of the first DC voltage source is grounded, the top electrode of the top gate is connected to the positive electrode of the second DC voltage source, and the negative electrode of the second DC voltage source is grounded; when writing current, the source electrode is connected to the positive electrode of the DC current source, the negative electrode of the DC current source is grounded, and the drain electrode is grounded; when reading current, the source electrode is connected to the positive electrode of the AC current source, the negative electrode of the AC current source is grounded, and the drain electrode is grounded; in a pair of measuring electrodes, the measuring electrode adjacent to the source electrode is connected to the positive electrode of the voltmeter, and the measuring electrode adjacent to the drain electrode is connected to the negative electrode of the voltmeter;

[0024] 3) The first DC voltage source applies a back gate voltage VB , so that a potential difference is formed between the back gate and the lower surface of the heterojunction, and the second DC voltage source applies a top gate voltage V T , so that a potential difference is formed between the top electrode of the top gate and the upper surface of the heterojunction; through the back gate voltage V B and the top gate voltage V T The carrier concentration and out-of-plane electric field of the heterojunction are adjusted so that the low-symmetry strong spin-orbit coupling material layer has the highest conversion efficiency from current to spin current and orbital current; a DC current source is used to pass a DC write current through the source-drain electrode. When the write current is passed, the low-symmetry strong spin-orbit coupling material layer has spin current and orbital current with out-of-plane polarization components. The spin current and orbital current lead to spin transfer torque and orbital transfer torque. The direction of the out-of-plane polarization is related to the direction of the write current; the synergistic effect of the orbital transfer torque and the spin transfer torque produces an anti-damping torque with an out-of-plane component; the direction of the out-of-plane anti-damping torque is controlled by controlling the direction of the write current; when the direction of the out-of-plane anti-damping torque is related to the direction of the layer When the atomic magnetic moments in a layer of the nearest neighbor low-symmetry strong spin-orbit coupling material in the inter-antiferromagnetic layer are antiparallel, the out-of-plane anti-damping torque drives the atomic magnetic moment of the nearest layer to reverse, and the inter-layer anti-ferromagnetic coupling makes the atomic magnetic moments of all layers above it follow the reverse direction, thereby realizing the reversal of the Née vector of the inter-layer anti-ferromagnetic layer without the assistance of an external magnetic field, and the Née vector is reversed; the direction of the write current is changed, that is, when the direct current source is passed through the source and drain electrodes to reverse the write current, the directions of the out-of-plane polarization components of the spin current and the orbital current are reversed, realizing the reverse anti-damping torque, and the Née vector of the inter-layer anti-ferromagnetic layer is reversed, that is, the Née vector reversal of the inter-layer anti-ferromagnetic layer is realized without the assistance of an external magnetic field and controlled by the current;

[0025] 4) The AC current source passes the AC reading current I through the source and drain electrodes ω The voltmeter measures the nonlinear longitudinal voltage of the heterojunction by measuring the electrode. The interlayer antiferromagnetic layer has two opposite Néel vectors. The nonlinear longitudinal voltage corresponding to the two opposite Néel vectors is The sign is opposite, so by measuring the nonlinear longitudinal voltage Get the direction of the Née vector of the interlayer antiferromagnetic layer;

[0026] 5) Using write current as write data and nonlinear longitudinal voltage as read data, a data storage device is implemented.

[0027] Among them, the write current I of the DC current source p In mA level. The first DC voltage source is -8V to 8V, the second DC voltage is -8V to 8V; the read current I of the AC current source ω The AC frequency is 7~150Hz.

[0028] Advantages of the present invention:

[0029] Compared with other flipping methods, the electrically controlled interlayer antiferromagnetic Née vector flipping device based on the synergistic effect of orbital transfer torque and spin transfer torque of the present invention shows significant advantages; its read and write paths are separated, which can achieve lower power consumption and faster operation speed; antiferromagnetic materials have high stability under external fields, almost zero stray fields, and high-frequency magnetization flipping capabilities, and thus have great application potential in ultrafast high-density magnetic storage devices; the electrically controlled interlayer antiferromagnetic Née vector flipping device based on the synergistic effect of orbital transfer torque and spin transfer torque not only provides a more efficient and low-power solution when realizing magnetization flipping, but also has a simple structure and is easy to integrate, and has great potential and application prospects in modern storage and logic device applications, showing great potential in the field of antiferromagnetic spin electronics. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 Schematic diagram of two different Née's vector states in one embodiment of a memory based on electrically controlled interlayer antiferromagnetic Née's vector reversal of the present invention;

[0031] Figure 2 A schematic diagram of the behavior of nonlinear longitudinal voltage changing with read current in one embodiment of a memory based on electrically controlled interlayer antiferromagnetic Nye vector reversal of the present invention;

[0032] Figure 3 The present invention is a flow chart of a method for preparing a memory based on electrically controlled interlayer antiferromagnetic Née vector reversal, wherein (a) to (d) are schematic diagrams of each step in the preparation process. DETAILED DESCRIPTION

[0033] The present invention will be further described below through specific embodiments in conjunction with the accompanying drawings.

[0034] like Figure 1As shown, the memory based on electrically controlled interlayer antiferromagnetic Nye vector reversal of this embodiment includes: a substrate 1, an insulating dielectric layer 2, a low-symmetry strong spin-orbit coupling material layer 4, an interlayer antiferromagnetic layer 5, a source electrode, a drain electrode, a measuring electrode, a top gate and a back gate; wherein the back gate is formed on the back side of the substrate 1; an insulating dielectric layer 2 is formed on the upper surface of the substrate 1, and a source electrode, a drain electrode and a pair of measuring electrodes are respectively formed on the insulating dielectric layer 2; the source electrode, the drain electrode and the pair of measuring electrodes are arranged in parallel, the source electrode and the drain electrode are respectively located on both sides, the pair of measuring electrodes are located between the source electrode and the drain electrode, the spacing between the electrodes is 1 to 10 μm, ... The bottom electrode 3 is formed by a low-symmetry strong spin-orbit coupling material layer 4 located on the insulating dielectric layer 2, the low-symmetry strong spin-orbit coupling material layer 4 is electrically in contact with the source-drain electrode and a pair of measuring electrodes, an interlayer antiferromagnetic layer 5 is formed on the low-symmetry strong spin-orbit coupling material layer 4, and the low-symmetry strong spin-orbit coupling material layer 4 and the interlayer antiferromagnetic layer 5 form a heterojunction; a top gate is formed on the heterojunction, the top gate includes a top gate insulating layer 6 and a top electrode 7 located on the top gate insulating layer, the top gate insulating layer of the top gate needs to completely cover the heterojunction to encapsulate and protect the heterojunction below; the top electrode of the top gate covers the channel of the heterojunction, that is, the top electrode covers the path for current to flow through the heterojunction.

[0035] Memory preparation, such as Figure 3 As shown:

[0036] a) Substrate 1 and insulating dielectric layer 2: A heavily electron-doped silicon substrate is selected as the basic support structure, and a 300nm thick SiO2 is provided on the front side as the insulating dielectric layer 2; this insulating dielectric layer 2 can effectively prevent current leakage and provide a stable base for subsequent structures, such as Figure 3 (a)

[0037] b) Bottom electrode: A source electrode, a drain electrode and a pair of measuring electrodes are formed on the insulating dielectric layer 2 using photolithography technology (such as electron beam exposure) and coating technology (such as electron beam evaporation coating); these electrodes are arranged in parallel to each other to form a bottom electrode 3, which provides a basis for subsequent electrical transport regulation and measurement, such as Figure 3 (b)

[0038] c) Heterojunction: Using single crystal growth methods (such as chemical vapor deposition, seed crystal cooling method, chemical vapor transport, etc.) to grow interlayer antiferromagnetic layer 5 with perpendicular magnetic anisotropy and low symmetry strong spin-orbit coupling material layer 4 in a tube furnace; Common single crystal growth methods include chemical vapor transport (CVT) and the like; Thin layers of material are peeled off from bulk materials by mechanical stripping methods; Mechanical stripping is usually carried out in an inert environment without water or oxygen, using transparent tape, polydimethylsiloxane (PDMS) and the like as auxiliary materials, and thin layers of material are obtained by repeated bonding, such as Figure 3(c)

[0039] d) using a dry transfer technique to transfer the peeled thin layer material to the bottom electrode 3 on the insulating dielectric layer 2; dry transfer usually involves using a PPC (polypropylene carbonate) film as a carrier, first placing the PPC film on the peeled thin layer material, then carefully lifting the material from the original substrate 1, and finally transferring the PPC film carrying the thin layer material to the bottom electrode 3; during the transfer process, the heterojunction and the bottom electrode 3 need to be precisely aligned to ensure good contact between the bottom electrode 3 and the heterojunction, so as to facilitate subsequent electrical transport measurement and regulation;

[0040] e) forming a top gate structure, including an insulating layer and a top electrode at the bottom of the top gate; the insulating layer of the top gate needs to completely cover the heterojunction to achieve encapsulation, and the top electrode covers the channel of the heterojunction; forming a top gate on the heterojunction, the top gate includes an insulating layer and a top electrode on the insulating layer; the insulating layer of the top gate usually uses a material with high insulating properties, such as hexagonal boron nitride (h-BN) or other high dielectric constant materials to reduce leakage current and improve device performance; the top electrode covers the channel of the heterojunction, that is, the top electrode covers the path of current flowing through the heterojunction, so as to facilitate the application of the top gate voltage V T , regulating the carrier concentration and electric displacement field of the heterojunction, such as Figure 3 (d) as shown.

[0041] Through the above steps, the electrically controlled interlayer antiferromagnetic material Née vector reversal device based on the synergistic effect of orbital transfer torque and spin transfer torque was successfully prepared, which provides a basis for subsequent electrical transport regulation and measurement. This preparation method can not only achieve high-quality heterojunction structure, but also ensure the electrical performance and stability of the device, laying a foundation for further research and application.

[0042] Working circuit and transport property measurement of memory:

[0043] The back gate is connected to the positive pole of the first DC voltage source, the negative pole of the first DC voltage source is grounded, the top electrode of the top gate is connected to the positive pole of the second DC voltage source, and the negative pole of the second DC voltage source is grounded; when writing current, the source electrode is connected to the positive pole of the DC current source, the negative pole of the DC current source is grounded, and the drain electrode is grounded; when reading current, the source electrode is connected to the positive pole of the AC current source, the negative pole of the AC current source is grounded, and the drain electrode is grounded; in a pair of measuring electrodes, the measuring electrode adjacent to the source electrode is connected to the positive pole of the voltmeter, and the measuring electrode adjacent to the drain electrode is connected to the negative pole of the voltmeter, which are used to measure the second-order frequency longitudinal voltage and other electrical properties of the heterojunction.

[0044] The first DC voltage source applies a back gate voltage V B, so that a potential difference is formed between the back gate and the lower surface of the heterojunction, and the second DC voltage source applies a top gate voltage V T , so that a potential difference is formed between the top electrode of the top gate and the upper surface of the heterojunction; through the back gate voltage V B and the top gate voltage V T The carrier concentration and out-of-plane electric field of the heterojunction are adjusted so that the low-symmetry strong spin-orbit coupling material layer 4 has the highest conversion efficiency from current to spin current and orbital current; the top gate voltage V T and back gate voltage V B The value range is usually -8V to 8V. Under this condition, the DC current source passes the DC write current I through the source and drain electrodes. p , write current I p It needs to be greater than the critical current I that can achieve the reversal of the interlayer antiferromagnetic layer Née vector in the heterojunction. c , usually in the mA order of magnitude; a DC current source passes a DC write current through the source-drain electrode. When the write current is passed, the low-symmetry strong spin-orbit coupling material layer 4 has a spin current and an orbital current with an out-of-plane polarization component. The spin current and the orbital current lead to a spin transfer torque and an orbital transfer torque. The direction of the out-of-plane polarization is related to the direction of the write current; the synergistic effect of the orbital transfer torque and the spin transfer torque produces an anti-damping torque with an out-of-plane component; the direction of the out-of-plane anti-damping torque is controlled by controlling the direction of the write current; when the direction of the out-of-plane anti-damping torque is consistent with the direction of the nearest neighbor low-symmetry strong spin-orbit coupling material layer in the interlayer antiferromagnetic layer, When the atomic magnetic moments in the layer are antiparallel, the out-of-plane anti-damping torque drives the atomic magnetic moment of the nearest layer to reverse, and the interlayer antiferromagnetic coupling makes the atomic magnetic moments of all the layers above it follow the reverse direction, thereby realizing the reversal of the Née vector of the interlayer antiferromagnetic layer 5 without the assistance of an external magnetic field, and the Née vector is reversed; changing the direction of the write current, that is, when the direct current source is passed through the source and drain electrodes to reverse the write current, the directions of the out-of-plane polarization components of the spin current and the orbital current are reversed, realizing the reverse anti-damping torque, and the Née vector of the interlayer antiferromagnetic layer 5 is reversed, that is, the Née vector of the interlayer antiferromagnetic layer 5 is reversed without the assistance of an external magnetic field and is controlled by the current;

[0045] The AC current source passes an AC reading current I with a frequency of f = 13.333 Hz through the source and drain electrodes. ω , the amplitude is fixed at I ω =50μA, where the read current I ω Much smaller than the critical current I c The voltmeter measures the nonlinear longitudinal voltage of the heterojunction by measuring the electrode. The interlayer antiferromagnetic layer has two opposite Néel vectors and the signal size is significant enough to use the nonlinear longitudinal voltage The magnetization state of the interlayer antiferromagnetic layer is obtained by measurement, such as Figure 2As shown, the nonlinear longitudinal voltages corresponding to the two opposite Néel vectors are The sign is opposite, so by measuring the nonlinear longitudinal voltage The direction of the Néel vector of the interlayer antiferromagnetic layer 5 is obtained;

[0046] A data storage device is implemented by using a write current as write data and a nonlinear longitudinal voltage as read data.

[0047] In this embodiment, the substrate 1 adopts a heavily electron-doped silicon substrate; the insulating dielectric layer 2 adopts 300nm thick SiO2; the bottom electrode 3 adopts Ti / Au with a thickness of 2nm / 15nm; the top electrode and the back gate electrode of the top gate adopt Ti / Au with a thickness of 5 / 60nm; the top gate insulating layer adopts hexagonal boron nitride h-BN with a thickness of 15nm; the low-symmetry strong spin-orbit coupling material layer 4 adopts tantalum iridium telluride TaIrTe4; the interlayer antiferromagnetic layer 5 with perpendicular magnetic anisotropy adopts manganese bismuth telluride MnBi2Te4.

[0048] Finally, it should be noted that the purpose of publishing the embodiments is to help further understand the present invention, but those skilled in the art can understand that various substitutions and modifications are possible without departing from the spirit and scope of the present invention and the appended claims. Therefore, the present invention should not be limited to the contents disclosed in the embodiments, and the scope of protection claimed by the present invention shall be subject to the scope defined in the claims.

Claims

1. A memory based on electrically controlled interlayer antiferromagnetic Néel vector reversal, characterized in that: The memory comprises: a substrate, an insulating dielectric layer, a low-symmetry strong spin-orbit coupling material layer, an interlayer antiferromagnetic layer, a source electrode, a drain electrode, a measuring electrode, a top gate and a back gate; wherein the back gate is formed on the back side of the substrate; an insulating dielectric layer is formed on the upper surface of the substrate, and a source electrode, a drain electrode and a pair of measuring electrodes arranged in parallel are formed on the insulating dielectric layer, the source electrode and the drain electrode are respectively located on both sides, and the pair of measuring electrodes are located between the source electrode and the drain electrode; the low-symmetry strong spin-orbit coupling material layer is located on the insulating dielectric layer, and the low-symmetry strong spin-orbit coupling material layer is located on the insulating dielectric layer. The strong spin-orbit coupling material layer is in electrical contact with the source-drain electrode and a pair of measuring electrodes, an interlayer antiferromagnetic layer is formed on the low-symmetry strong spin-orbit coupling material layer, and the low-symmetry strong spin-orbit coupling material layer and the interlayer antiferromagnetic layer constitute a heterojunction; a top gate is formed on the heterojunction, the top gate includes a top gate insulating layer and a top electrode located on the top gate insulating layer, the top gate insulating layer of the top gate completely covers the heterojunction to encapsulate and protect the heterojunction below; the top electrode of the top gate covers the channel of the heterojunction, that is, the top electrode covers the path of current flowing through the heterojunction; The back gate is connected to the positive electrode of the first DC voltage source, the negative electrode of the first DC voltage source is grounded, the top electrode of the top gate is connected to the positive electrode of the second DC voltage source, and the negative electrode of the second DC voltage source is grounded; when writing current, the source electrode is connected to the positive electrode of the DC current source, the negative electrode of the DC current source is grounded, and the drain electrode is grounded; when reading current, the source electrode is connected to the positive electrode of the AC current source, the negative electrode of the AC current source is grounded, and the drain electrode is grounded; in a pair of measuring electrodes, the measuring electrode adjacent to the source electrode is connected to the positive electrode of the voltmeter, and the measuring electrode adjacent to the drain electrode is connected to the negative electrode of the voltmeter; The first DC voltage source applies a back gate voltage VB, so that a potential difference is formed between the back gate and the lower surface of the heterojunction. The second DC voltage source applies a top gate voltage VT, so that a potential difference is formed between the top electrode of the top gate and the upper surface of the heterojunction; the carrier concentration and the out-of-plane electric field of the heterojunction are adjusted by the back gate voltage VB and the top gate voltage VT, so that the low-symmetry strong spin-orbit coupling material layer has the highest current to spin current and orbital current conversion efficiency; the DC current source passes a DC write current through the source and drain electrodes. When the write current is passed, the low-symmetry strong spin-orbit coupling material layer has spin current and orbital current with out-of-plane polarization components. The spin current and orbital current lead to spin transfer torque and orbital transfer torque. The direction of the out-of-plane polarization is related to the direction of the write current; the synergistic effect of the orbital transfer torque and the spin transfer torque produces an anti-damping torque with an out-of-plane component; by controlling the direction of the write current direction, controlling the direction of the out-of-plane anti-damping torque; when the direction of the out-of-plane anti-damping torque is antiparallel to the atomic magnetic moment in a layer of the nearest neighboring low-symmetry strong spin-orbit coupling material in the interlayer antiferromagnetic layer, the out-of-plane anti-damping torque drives the atomic magnetic moment of the nearest layer to reverse, and the interlayer antiferromagnetic coupling causes the atomic magnetic moments of all layers above it to follow the reverse direction, thereby realizing the reversal of the Née vector of the interlayer antiferromagnetic layer without the assistance of an external magnetic field, and the Née vector is reversed; changing the direction of the write current, that is, when the direct current source passes the write current through the source and drain electrodes in the reverse direction, the directions of the out-of-plane polarization components of the spin current and the orbital current are reversed, realizing the reverse anti-damping torque, and causing the Née vector of the interlayer antiferromagnetic layer to reversely flip, that is, realizing the Née vector reversal of the interlayer antiferromagnetic layer without the assistance of an external magnetic field and controlled by the current; The AC current source passes the AC reading current I through the source and drain electrodes. ω The voltmeter measures the nonlinear longitudinal voltage of the heterojunction by measuring the electrode. The interlayer antiferromagnetic layer has two opposite Néel vectors. The nonlinear longitudinal voltage corresponding to the two opposite Néel vectors is The sign is opposite, so by measuring the nonlinear longitudinal voltage Get the direction of the Née vector of the interlayer antiferromagnetic layer; A data storage device is implemented by using a write current as write data and a nonlinear longitudinal voltage as read data.

2. The memory according to claim 1, wherein: The low-symmetry strong spin-orbit coupling material layer is made of tantalum-iridium-telluride TaIrTe4, niobium-iridium-telluride NbIrTe4 or tungsten ditelluride WTe2; and has a thickness of 2 to 10 nm.

3. The memory according to claim 1, wherein: The interlayer antiferromagnetic layer is made of manganese bismuth telluride MnBi2Te4, chromium phosphorus sulfur CrPS4, chromium oxide Cr2O3 or cadmium iodide CrI3, and has a thickness of 2-10nm.

4. The memory according to claim 1, wherein: The top electrode, back gate electrode, source-drain electrode and measuring electrode of the top gate are all made of conductive metal.

5. The memory according to claim 1, wherein: The write current of the DC current source is in the mA level; the first DC voltage source is -8V to 8V, and the second DC voltage is -8V to 8V; the AC frequency of the read current of the AC current source is 7 to 150 Hz.

6. The memory according to claim 1, wherein: The thickness of the insulating dielectric layer is 280-320 nm; the thickness of the top gate insulating layer is 20-30 nm.

7. A method for implementing a memory based on electrically controlled interlayer antiferromagnetic Néel vector reversal as claimed in claim 1, characterized in that: The implementation method comprises the following steps: 1) Memory settings: A back gate is formed on the back side of the substrate; an insulating dielectric layer is formed on the upper surface of the substrate, and a source electrode, a drain electrode and a pair of measuring electrodes arranged in parallel are formed on the insulating dielectric layer, the source electrode and the drain electrode are respectively located on both sides, and the pair of measuring electrodes are located between the source electrode and the drain electrode; a low-symmetry strong spin-orbit coupling material layer is located on the insulating dielectric layer, the low-symmetry strong spin-orbit coupling material layer is in electrical contact with the source-drain electrode and the pair of measuring electrodes, an interlayer antiferromagnetic layer is formed on the low-symmetry strong spin-orbit coupling material layer, and the low-symmetry strong spin-orbit coupling material layer and the interlayer antiferromagnetic layer constitute a heterojunction; a top gate is formed on the heterojunction, the top gate includes a top gate insulating layer and a top electrode located on the top gate insulating layer, and the top gate insulating layer of the top gate needs to completely cover the heterojunction to encapsulate and protect the heterojunction below; the top electrode of the top gate covers the channel of the heterojunction, that is, the top electrode covers the path through which current flows through the heterojunction; 2) The back gate is connected to the positive electrode of the first DC voltage source, the negative electrode of the first DC voltage source is grounded, the top electrode of the top gate is connected to the positive electrode of the second DC voltage source, and the negative electrode of the second DC voltage source is grounded; when writing current, the source electrode is connected to the positive electrode of the DC current source, the negative electrode of the DC current source is grounded, and the drain electrode is grounded; when reading current, the source electrode is connected to the positive electrode of the AC current source, the negative electrode of the AC current source is grounded, and the drain electrode is grounded; in a pair of measuring electrodes, the measuring electrode adjacent to the source electrode is connected to the positive electrode of the voltmeter, and the measuring electrode adjacent to the drain electrode is connected to the negative electrode of the voltmeter; 3) The first DC voltage source applies a back gate voltage V B , so that a potential difference is formed between the back gate and the lower surface of the heterojunction, and the second DC voltage source applies a top gate voltage V T , so that a potential difference is formed between the top electrode of the top gate and the upper surface of the heterojunction; through the back gate voltage V B and the top gate voltage V T The carrier concentration and out-of-plane electric field of the heterojunction are adjusted so that the low-symmetry strong spin-orbit coupling material layer has the highest conversion efficiency from current to spin current and orbital current; a DC current source is used to pass a DC write current through the source-drain electrode. When the write current is passed, the low-symmetry strong spin-orbit coupling material layer has spin current and orbital current with out-of-plane polarization components. The spin current and orbital current lead to spin transfer torque and orbital transfer torque. The direction of the out-of-plane polarization is related to the direction of the write current; the synergistic effect of the orbital transfer torque and the spin transfer torque produces an anti-damping torque with an out-of-plane component; the direction of the out-of-plane anti-damping torque is controlled by controlling the direction of the write current; when the direction of the out-of-plane anti-damping torque is related to the direction of the layer When the atomic magnetic moments in a layer of the nearest neighbor low-symmetry strong spin-orbit coupling material in the inter-antiferromagnetic layer are antiparallel, the out-of-plane anti-damping torque drives the atomic magnetic moment of the nearest layer to reverse, and the inter-layer anti-ferromagnetic coupling makes the atomic magnetic moments of all layers above it follow the reverse direction, thereby realizing the reversal of the Née vector of the inter-layer anti-ferromagnetic layer without the assistance of an external magnetic field, and the Née vector is reversed; the direction of the write current is changed, that is, when the direct current source is passed through the source and drain electrodes to reverse the write current, the directions of the out-of-plane polarization components of the spin current and the orbital current are reversed, realizing the reverse anti-damping torque, and the Née vector of the inter-layer anti-ferromagnetic layer is reversed, that is, the Née vector reversal of the inter-layer anti-ferromagnetic layer is realized without the assistance of an external magnetic field and controlled by the current; 4) The AC current source passes the AC reading current I through the source and drain electrodes ω The voltmeter measures the nonlinear longitudinal voltage of the heterojunction by measuring the electrode. The interlayer antiferromagnetic layer has two opposite Néel vectors. The nonlinear longitudinal voltage corresponding to the two opposite Néel vectors is The sign is opposite, so by measuring the nonlinear longitudinal voltage Get the direction of the Née vector of the interlayer antiferromagnetic layer; 5) Using write current as write data and nonlinear longitudinal voltage as read data, a data storage device is implemented.

8. The implementation method according to claim 7, characterized in that: The write current is in the mA range.

9. The implementation method according to claim 7, characterized in that: The first DC voltage source is -8V to 8V, and the second DC voltage is -8V to 8V.

10. The implementation method according to claim 7, characterized in that: The AC frequency of the read current is 7 to 150 Hz.

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