Thin film deposition device for monitoring stability of liquid source reaction gas in real time

Abstract

The invention provides a thin film deposition device for monitoring the stability of liquid source reaction gas in real time, which comprises a gas path system, a main reaction chamber, a side reaction chamber and a control unit, the gas path system enables carrier gas and a liquid source to form liquid source reaction gas in an aerosol state; the main reaction cavity is used for liquid source reaction gas to carry out a thin film deposition process, the side reaction cavity is used for simulating the thin film deposition process in the main reaction cavity, and a process sensor is arranged in the side reaction cavity and used for monitoring process parameters of the side reaction cavity in the thin film deposition process in real time; the control unit is used for collecting process parameters monitored by the process sensor in real time and judging the stability of the liquid source reaction gas by comparing the process parameters with a preset threshold value, and the control unit controls whether the liquid source reaction gas is introduced into the main reaction cavity or not according to a judgment result; the problem that the product yield in the main reaction cavity is low due to the fact that the stability of liquid source reaction gas cannot be monitored in advance in the prior art is effectively solved.

Description

Technical Field

[0001] The invention belongs to the technical field of chemical vapor deposition, and in particular relates to a thin film deposition device for real-time monitoring of the stability of liquid source reaction gas. Background Art

[0002] With the continuous promotion of Moore's Law, the number of integrated circuits on integrated circuit chips is growing at an alarming rate, doubling every 18 months. This trend has led to an increasing number of devices on the chip, which in turn has reduced the size of the chip. However, as the key size of the chip gradually decreases, improving the yield has gradually become an important issue that needs to be solved in the semiconductor production process. Especially at semiconductor technology nodes of 65nm and below, surface defects generated in various process links during the manufacturing process have become the main factor leading to reduced yield.

[0003] In the semiconductor back-end metal connection process, the passivation layer NDC, the ultra-low dielectric constant layer ULK and TEOS SiOx are widely used as metal insulation layers. These three dielectric layers are grown using the plasma enhanced chemical vapor deposition (PECVD) process. The following are the reaction equations for the three dielectric layer films:

[0004] 4Si(CH3)4+NH3+N2+He→SiCN+H2↑+byproduct↑

[0005] DEMS+ATRP / BCHD+O2+He→SiCOH+H2↑+Byproduct↑

[0006] TEOS+O2+He+N2→SiOx+H2↑+Byproduct↑

[0007] The passivation layer NDC (SiCN) uses silicon source gas (such as tetramethylsilane Si(CH3)4) and nitrogen source gas (such as ammonia NH3) as precursors, and adds auxiliary gases such as nitrogen (N2) and helium (He). Under the action of the electric field excited by the RF source, plasma is formed to promote the decomposition and reaction of the precursor to form a silicon carbon nitride (SiCN) film. The ultra-low dielectric constant layer ULK uses diethoxymethylsilane (DEMS) as a precursor, adds oxygen and helium as auxiliary gases, and forms a SiCOH film through PECVD deposition. During the deposition process, pore formers (such as ATRP or BCHD) can also be added to increase the porosity. TEOSSiOx is a silicon dioxide film generated by the reaction of tetraethoxysilane (TEOS) and oxygen. During the PECVD process, TEOS gas decomposes under the action of plasma to generate silanol intermediates, which then react with oxygen to form a silicon dioxide film.

[0008] The main reaction sources of the above three kinds of thin films are all macromolecular organic liquid raw materials. The liquid raw materials are in a liquid state under normal conditions. Since the reactant raw materials introduced into the reaction chamber must be in a gaseous state, the liquid source must be vaporized first. In the prior art, the liquid source is usually transported to the reaction chamber through a pipeline by heating evaporation or carrier gas carrying, and is mixed with the carrier gas in the reaction chamber for chemical reaction to form the required thin film material. However, since the pipeline path for transporting the reactants of the liquid source into the reaction chamber is relatively long, the gas source usually needs to be turned on for a long time, which not only wastes valuable production time but also leads to a large consumption of raw materials. Moreover, the temperature of the reaction chamber needs to be kept constant at about 400 °C. Long-term ventilation may cause the reactants to stay in the reaction chamber for a longer time, resulting in more side reactions or unwanted decomposition products, which will cause more sources of thin film defects. Especially during the thin film deposition process, due to the unstable gas source flow, it will directly lead to film quality denaturation or abnormal film thickness, thereby reducing the yield and production efficiency of the semiconductor back-end metal wiring process.

[0009] Therefore, it is necessary to provide an improved technical solution to address the deficiencies of the above prior art. Summary of the Invention

[0010] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a thin film deposition device for real-time monitoring of the stability of the liquid source reaction gas, which is at least used to solve the problem of low product yield caused by unstable liquid source flow in the prior art.

[0011] To achieve the above object and other related objects, the present invention provides a thin film deposition device for real-time monitoring of the stability of the liquid source reaction gas. The thin film deposition device includes:

[0012] A gas path system, the gas path system includes a liquid source supply unit, a carrier gas supply unit, and a spray valve. The liquid source supply unit is used to provide a liquid source, the carrier gas supply unit is used to provide a carrier gas, the spray valve includes a liquid source inlet end, a carrier gas inlet end, and a spray outlet. The liquid source supply unit is connected to the liquid source inlet end of the spray valve through a liquid supply pipeline, the carrier gas supply unit is connected to the carrier gas inlet end of the spray valve through a carrier gas pipeline, and the carrier gas and the liquid source respectively enter the spray valve and are ejected from the spray outlet to form an aerosolized liquid source reaction gas;

[0013] A main reaction chamber, the main reaction chamber is used for the thin film deposition process of the liquid source reaction gas. A first air inlet is provided on the main reaction chamber. The first air inlet is connected to the spray outlet through a first air inlet pipeline, and a control valve is provided on the first air inlet pipeline. The control valve is used to control the entry of the liquid source reaction gas into the main reaction chamber;

[0014] A secondary reaction chamber is provided with a second inlet gas port. The second inlet gas port is connected to the ejection outlet through a second inlet gas pipeline. The liquid-source reaction gas enters the secondary reaction chamber through the second inlet gas pipeline for a thin film deposition process. At least one process sensor is disposed in the secondary reaction chamber, and the process sensor is used to monitor in real time the process parameters during the thin film deposition process in the secondary reaction chamber.

[0015] A control unit is electrically connected to the process sensor and the control valve respectively. The control unit is used to collect in real time the process parameters monitored by the process sensor, and judge the stability of the liquid-source reaction gas by comparing the process parameters with preset thresholds. The control unit controls the on-off of the control valve according to the judgment result.

[0016] Preferably, the liquid-source supply unit includes a liquid storage tank and a suction pipe. The liquid storage tank contains the liquid source to be vaporized. The lower end of the suction pipe is inserted below the liquid level of the liquid source, and the upper end of the suction pipe is connected to the input end of the liquid supply pipeline. Pressurized gas is introduced into the liquid storage tank to enable the liquid source to enter the injection valve through the suction pipe and the liquid supply pipeline.

[0017] Preferably, a liquid flow controller is disposed on the liquid supply pipeline, and the liquid flow controller is used to regulate the flow rate of the liquid source introduced into the injection valve.

[0018] Preferably, a gas flow controller is disposed on the carrier gas pipeline, and the gas flow controller is used to regulate the flow rate of the carrier gas introduced into the injection valve.

[0019] Preferably, both the first inlet gas pipeline and the second inlet gas pipeline are wrapped with heating tapes, and the heating tapes are used to heat the first inlet gas pipeline and the second inlet gas pipeline.

[0020] Preferably, the first inlet gas pipeline and the second inlet gas pipeline are connected to the ejection outlet through a three-way valve. The three-way valve includes an inlet end, a first outlet end and a second outlet end. The inlet end is connected to the ejection outlet through a main pipeline. The first outlet end is connected to the first inlet gas port through the first inlet gas pipeline. The second outlet end is connected to the second inlet gas port through the second inlet gas pipeline.

[0021] Preferably, the thin film deposition device further includes a vacuum system. The vacuum system is connected to the main reaction chamber and the secondary reaction chamber respectively, and is used to evacuate the main reaction chamber and the secondary reaction chamber.

[0022] Preferably, the process sensor is integrated with a pressure sensor, a radio frequency power sensor, and a pumping speed sensor. The pressure sensor is used to monitor the gas pressure in the sub-reaction chamber during the film deposition process in real time. The radio frequency power sensor is used to monitor the reflected power and the loaded power of the plasma during the film deposition process in real time. The pumping speed sensor is used to monitor the pumping speed of the vacuum system during the film deposition process in real time.

[0023] Preferably, the film deposition apparatus further includes an external gas source for providing isolation gas. The external gas source is connected to the external gas source inlets of the main reaction chamber and the sub-reaction chamber through pipelines respectively, and is used to provide isolation gas to the main reaction chamber and the sub-reaction chamber respectively.

[0024] Preferably, the volume of the main reaction chamber is 5 to 10 times that of the sub-reaction chamber.

[0025] As described above, the film deposition apparatus for real-time monitoring of the stability of the liquid source reaction gas of the present invention has the following beneficial effects:

[0026] The present invention adds a sub-reaction chamber. By using the process sensor in the sub-reaction chamber to monitor the process parameters during the film deposition process in real time and combining with the dynamic analysis of the control unit, the phenomenon of unstable liquid source reaction gas can be found within a short time, effectively solving the problem in the prior art that the stability of the liquid source reaction gas cannot be monitored in advance, resulting in a low product yield in the main reaction chamber.

[0027] In the present invention, the volume of the sub-reaction chamber is very small. Only a very small amount of liquid source reaction gas is required to evaluate the stability of the liquid source reaction gas during the film deposition process, greatly reducing the waste of raw materials. And the process flexibility is high, which can be flexibly switched according to different needs. It can only enable the sub-reaction chamber to predict the stability of the reaction gas, and then start the main reaction chamber after the stability meets the standard. It can also perform the main reaction chamber and the sub-reaction chamber simultaneously to monitor the stability of the reaction gas in real time. When the reaction gas is unstable, the control unit will disconnect the control valve and stop the machine in time to avoid depositing the film in the main reaction chamber under the unstable state of the reaction gas, greatly improving the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It shows a schematic structural diagram of the film deposition apparatus for real-time monitoring of the stability of the liquid source reaction gas of the present invention.

[0029] Figure 2 It shows a schematic structural diagram of the sub-reaction chamber of the present invention.

[0030] DESCRIPTION OF REFERENCE NUMERALS

[0031] 101 Liquid storage tank

[0032] 102 Suction pipe

[0033] 103 Pressurized gas

[0034] 104 Liquid supply pipeline

[0035] 105 Liquid flow controller

[0036] 201 Carrier gas tank

[0037] 202 Carrier gas pipeline

[0038] 203 Gas flow controller

[0039] 30 Injection valve

[0040] 40 Main reaction chamber

[0041] 400 Main pipeline

[0042] 401 First intake pipeline

[0043] 402 Control valve

[0044] 50 Secondary reaction chamber

[0045] 501 Second intake pipeline

[0046] 502 Second intake port

[0047] 503 Second external gas source inlet

[0048] 504 Gas nozzle

[0049] 505 Jet channel

[0050] 506 Processing space

[0051] 507 Process sensor

[0052] 60 Three-way valve

[0053] 70 External gas source Specific implementation mode

[0054] The following illustrates the implementation mode of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through different specific implementation modes. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0055] Before further describing the specific embodiments of the present invention, it should be understood that the protection scope of the present invention is not limited to the specific embodiments described below; it should also be understood that the terms used in the embodiments of the present invention are for the purpose of describing specific embodiments, rather than limiting the protection scope of the present invention. The test methods without specific conditions noted in the following embodiments are generally carried out under conventional conditions or according to the conditions recommended by each manufacturer.

[0056] When numerical ranges are given in the embodiments, it should be understood that unless otherwise specified in the present invention, any value between the two endpoints of each numerical range, as well as the two endpoints themselves, can be selected. Unless otherwise defined, all technical and scientific terms used in the present invention have the same meaning as commonly understood by those skilled in the art of this technology. In addition to the specific methods, equipment, and materials used in the embodiments, according to the knowledge of those skilled in the art of this technology and the description of the present invention, any methods, equipment, and materials similar to or equivalent to the methods, equipment, and materials described in the embodiments of the present invention can also be used to implement the present invention.

[0057] Please refer to Figure 1-2 . It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The types, quantities, and proportions of the components in actual implementation can be arbitrarily changed, and the layout type of the components may also be more complex.

[0058] The present invention provides a thin film deposition device for real-time monitoring of the stability of a liquid source reaction gas. The thin film deposition device includes a gas path system, a main reaction chamber 40, a secondary reaction chamber 50, and a control unit (not shown in the figure); wherein, the gas path system includes a liquid source supply unit, a carrier gas supply unit, and an injection valve 30. The liquid source supply unit is used to provide a liquid source, the carrier gas supply unit is used to provide a carrier gas, and the injection valve 30 includes a liquid source inlet end, a carrier gas inlet end, and an injection outlet. The liquid source supply unit is connected to the liquid source inlet end of the injection valve 30 through a liquid supply pipeline 104, and the carrier gas supply unit is connected to the carrier gas inlet end of the injection valve 30 through a carrier gas pipeline 202. The carrier gas and the liquid source enter the injection valve 30 respectively and are ejected from the injection outlet to form an aerosolized liquid source reaction gas; the main reaction chamber 40 is used for performing a thin film deposition process on the liquid source reaction gas. A first air inlet (not shown in the figure) is provided on the main reaction chamber 40, and the first air inlet is connected to the injection outlet through a first intake pipeline 401. A control valve 402 is provided on the first intake pipeline 401, and the control valve 402 is used to control the entry of the liquid source reaction gas into the main reaction chamber 40; a second air inlet 502 is provided on the secondary reaction chamber 50, and the second air inlet 502 is connected to the injection outlet through a second intake pipeline 501. The liquid source reaction gas enters the secondary reaction chamber 50 through the second intake pipeline 501 for performing a thin film deposition process; at least one process sensor 507 is provided in the secondary reaction chamber 50, and the process sensor 507 is used to real-time monitor the process parameters during the thin film deposition process in the secondary reaction chamber 50; the control unit is electrically connected to the process sensor 507 and the control valve 402 respectively. The control unit is used to real-time collect the process parameters monitored by the process sensor 507, and judge the stability of the liquid source reaction gas by comparing the process parameters with a preset threshold. The control unit controls the on-off of the control valve 402 according to the judgment result.

[0059] Specifically, the thin film deposition device in the present invention can detect the instability of the liquid source reaction gas in a short time by real-time monitoring the process parameters during the thin film deposition process through the process sensor 507 in the secondary reaction chamber 50 and combining the dynamic analysis of the control unit, effectively solving the problem in the prior art that the stability of the liquid source reaction gas cannot be monitored in advance, resulting in a low product yield in the main reaction chamber 40; Plasma Enhanced Chemical Vapor Deposition (PECVD) is performed in the main reaction chamber 40 and the secondary reaction chamber 50 of the thin film deposition device, which can be used for liquid source reaction sources for preparing NDC(SiCN), ULK, and TEOS SiOx thin films, and is also applicable to other liquid sources.

[0060] Refer to Figure 1 , in a specific embodiment of the present invention, the control valve 402 provided on the first intake pipeline 401 is a two-position three-way valve. When the position of the control valve 402 is 1, the liquid source reaction gas enters the main reaction chamber 40 through the first intake pipeline 401. When the position of the control valve 402 is 0, the entry of the liquid source reaction gas into the main reaction chamber 40 is blocked.

[0061] The thin film deposition device in the present invention has process flexibility and can be flexibly switched according to process requirements to adapt to different production scenarios. In one specific embodiment, a pre-ventilation mode can be adopted. The control valve 402 is in the off state, and the liquid-source reaction gas enters the secondary reaction chamber 50 for the thin film deposition process. The process sensor 507 monitors the process parameters during the thin film deposition process in real time and transmits the data to the control unit. The control unit determines the stability of the liquid-source reaction gas by comparing the process parameters with the preset threshold. After the stability of the liquid-source reaction gas meets the standard, the control unit sends an opening instruction to the control valve 402, and the liquid-source reaction gas enters the main reaction chamber 40 and undergoes the thin film deposition process in the main reaction chamber 40. In another specific embodiment, a parallel monitoring mode can be adopted. The main reaction chamber 40 and the secondary reaction chamber 50 operate simultaneously. The process sensor 507 in the secondary reaction chamber 50 monitors the stability of the liquid-source reaction gas in real time. When it is detected that the stability of the liquid-source reaction gas does not meet the standard, the control unit promptly sends a disconnection instruction to the control valve 402 and no longer continues to supply the liquid-source reaction gas to the main reaction chamber 40, greatly improving the yield of the products prepared in the main reaction chamber 40.

[0062] Preferably, two process sensors 507 are symmetrically arranged on the inner wall of the secondary reaction chamber 50. The two process sensors 507 are respectively used to monitor the process parameters during the thin film deposition process in the secondary reaction chamber 50 in real time. Among them, the process parameters include the gas pressure in the secondary reaction chamber 50, the reflected power and input power of the plasma, and the pumping speed of the vacuum system. The fluctuation of the gas pressure in the secondary reaction chamber 50 will affect the mean free path of gas molecules and reaction kinetics, resulting in uneven thin film deposition rate and quality; when the RF power supply inputs power to the plasma, part of the power will be reflected back. Excessive reflected power may cause equipment damage or process abnormalities; the actual power input to the plasma directly affects the plasma density, reaction rate, and thin film deposition rate; the pumping speed of the vacuum pump determines the residence time of the reaction gas and the reaction chamber pressure control ability; by comparing these process parameters with the preset threshold, the stability of the liquid-source reaction gas can be judged. As an example, the liquid-source supply unit includes a liquid storage tank 101 and a suction pipe 102. The liquid storage tank 101 contains the liquid source to be vaporized. The lower end of the suction pipe 102 is inserted below the liquid level of the liquid source, and the upper end of the suction pipe 102 is connected to the input end of the liquid supply pipeline 104. The pressurized gas 103 is introduced into the liquid storage tank 101 to suck the liquid source through the suction pipe 102 and enter the injection valve 30 through the liquid supply pipeline 104.

[0063] Specifically, refer to Figure 1, after introducing pressurized gas 103 to make the liquid source enter the suction pipe 102 and then enter the injection valve 30 through the liquid supply pipeline 104, the pressurized gas 103 is preferably high-purity nitrogen. Of course, other gases that have no impact on the thin film deposition process can also meet the usage requirements. There are no excessive restrictions on the pressure of the pressurized gas 103, as long as it can meet the requirement of pressing the liquid source in the liquid storage tank 101 into the liquid supply pipeline 104.

[0064] As an example, a liquid flow controller 105 is provided on the liquid supply pipeline 104, and the liquid flow controller 105 is used to regulate the flow rate of the liquid source introduced into the injection valve 30.

[0065] As an example, the carrier gas supply unit includes a carrier gas tank 201. The carrier gas tank 201 is used to provide carrier gas. The output end of the carrier gas tank 201 is connected to the injection valve 30 through a carrier gas pipeline 202, and the carrier gas is introduced into the injection valve 30 through the carrier gas pipeline 202.

[0066] As an example, a gas flow controller 203 is provided on the carrier gas pipeline 202, and the gas flow controller 203 is used to regulate the flow rate of the carrier gas introduced into the injection valve 30.

[0067] Specifically, the liquid flow controller 105 can precisely control the flow rate of the liquid source entering the injection valve 30. During the process of converting the liquid source into a gaseous state and then introducing it into the main reaction chamber 40 for the thin film deposition process, the liquid source may experience turbulence or insufficient flow rate. Moreover, due to unstable temperature, the vaporized liquid source may be partially liquefied again, and the actual flow rate entering the main reaction chamber 40 cannot be fed back. Similarly, the gas flow controller 203 can precisely control the flow rate of the carrier gas entering the injection valve 30, rather than the actual flow rate entering the main reaction chamber 40.

[0068] As an example, both the first inlet gas pipeline 401 and the second inlet gas pipeline 501 are wrapped with heating tapes, and the heating tapes are used to heat the first inlet gas pipeline 401 and the second inlet gas pipeline 501.

[0069] In a specific embodiment of the present invention, the heating temperature is 100°C to 120°C to prevent the aerosolized liquid source reaction gas ejected from the injection outlet from re-liquefying.

[0070] As an example, the first inlet gas pipeline 401 and the second inlet gas pipeline 501 are connected to the injection outlet through a three-way valve 60. The three-way valve 60 includes an inlet end, a first outlet end, and a second outlet end. The inlet end is connected to the injection outlet through a main pipeline 400. The first outlet end is connected to the first inlet through the first inlet gas pipeline 401, and the second outlet end is connected to the second inlet 502 through the second inlet gas pipeline 501.

[0071] Specifically, refer to Figure 1, the ejection outlet of the ejection valve 30 is connected to the inlet end of the three-way valve 60 through the main pipeline 400, and then leads to the main reaction chamber 40 and the secondary reaction chamber 50 respectively through the two outlets of the three-way valve 60; the periphery of the main pipeline 400 is also wrapped with a heating tape.

[0072] As an example, the thin film deposition device further includes a vacuum system, and the vacuum system is respectively connected to the main reaction chamber 40 and the secondary reaction chamber 50 for evacuating the main reaction chamber 40 and the secondary reaction chamber 50.

[0073] As an example, the process sensor 507 is integrated with a pressure sensor, a radio frequency power sensor and a pumping speed sensor. The pressure sensor is used to monitor the gas pressure in the secondary reaction chamber 50 in real time during the thin film deposition process. The radio frequency power sensor is used to monitor the reflected power and the input power of the plasma in real time during the thin film deposition process. The pumping speed sensor is used to monitor the pumping speed of the vacuum system in real time during the thin film deposition process.

[0074] Specifically, the fluctuation of the gas pressure in the secondary reaction chamber 50 will affect the mean free path of gas molecules and reaction kinetics, resulting in uneven thin film deposition rate and quality; when the radio frequency power supply inputs power to the plasma, some power will be reflected back. Excessive reflected power may cause equipment damage or process abnormalities; the actual power input to the plasma directly affects the plasma density, reaction rate and thin film deposition rate; the pumping speed of the vacuum system determines the residence time of the reaction gas and the reaction chamber pressure control ability; comparing these process parameters with the preset threshold values is used to judge the stability of the liquid source reaction gas.

[0075] As an example, the thin film deposition device further includes an external gas source (not shown in the figure), and the external gas source is used to provide an isolation gas. The external gas source is connected to the external gas source inlets of the main reaction chamber 40 and the secondary reaction chamber 50 respectively through pipelines for providing isolation gases to the main reaction chamber 40 and the secondary reaction chamber 50 respectively.

[0076] Specifically, the isolation gas is an inert gas, and no specific limitation is made here.

[0077] In a specific embodiment of the present invention, the thin film deposition device further includes a process gas source device 70, and the process gas source device 70 provides process gases to the main reaction chamber 40 and the secondary reaction chamber 50 respectively, and the process gases are reaction gases for participating in the thin film deposition process.

[0078] As an example, the volume of the main reaction chamber 40 is 5 to 10 times that of the secondary reaction chamber 50 (such as any value within the range of 5 times, 6 times, 7 times, 8 times, 9 times, 10 times, etc.).

[0079] Specifically, the internal structure of the secondary reaction chamber 50 differs from that of the main reaction chamber 40 in that its volume is reduced, and a process sensor 507 is provided. The thin-film deposition process in the secondary reaction chamber 50 is the same as that in the main reaction chamber 40. The thin-film deposition process in the secondary reaction chamber 50 simulates all the reaction processes in the main reaction chamber 40. By using the process sensor 507 in the secondary reaction chamber 50 to monitor the process parameters during the thin-film deposition process in real time and combining with the dynamic analysis of the control unit, the phenomenon of unstable liquid-source reaction gas can be detected in a short time, effectively solving the problem in the prior art that the stability of the liquid-source reaction gas cannot be monitored in advance, resulting in a low product yield in the main reaction chamber 40.

[0080] Refer to Figure 2 FIG. is a schematic structural diagram of the secondary reaction chamber 50. The secondary reaction chamber 50 is provided with a second air inlet 502, a second external gas source inlet 503, a gas spray head 504, and at least one jet channel 505. The external gas source is connected to the second external gas source inlet 503 through a pipeline, and the isolation gas provided by the external gas source is transmitted to the outlet of the jet channel 505 through the jet channel 505. The outlet of the jet channel 505 is used to spray the isolation gas to form a gas barrier to isolate the processing space 506 of the secondary reaction chamber 50 from the outside of the processing space 506; the gas spray head 504 is responsible for evenly distributing the liquid-source reaction gas into the processing space 506 of the secondary reaction chamber 50 to ensure uniform deposition of the thin film; wherein, the process sensor 507 is installed on the inner wall of the processing space 506 of the secondary reaction chamber 50.

[0081] In summary, the present invention adds a secondary reaction chamber. By using the process sensor in the secondary reaction chamber to monitor the process parameters during the thin-film deposition process in real time and combining with the dynamic analysis of the control unit, the phenomenon of unstable liquid-source reaction gas can be detected in a short time, effectively solving the problem in the prior art that the stability of the liquid-source reaction gas cannot be monitored in advance, resulting in a low product yield in the main reaction chamber. The volume of the secondary reaction chamber in the present invention is very small. Only a very small amount of liquid-source reaction gas is required to evaluate the stability of the liquid-source reaction gas during the thin-film deposition process, greatly reducing the waste of raw materials; and the process flexibility is high, and it can be flexibly switched according to different requirements. It can only enable the secondary reaction chamber to predict the stability of the reaction gas, and then start the main reaction chamber after the stability meets the standard. It can also be carried out synchronously in the main reaction chamber and the secondary reaction chamber to monitor the stability of the reaction gas in real time. When the reaction gas is unstable, the control unit will disconnect the control valve and stop the machine in time to avoid depositing the thin film in the main reaction chamber under the unstable state of the reaction gas, greatly improving the product yield. Therefore, the present invention effectively overcomes various disadvantages in the prior art and has high industrial utilization value.

[0082] The above embodiments are only illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A thin film deposition device for real-time monitoring of the stability of liquid source reaction gas, characterized in that: The thin film deposition device comprises: A gas circuit system, wherein the gas circuit system comprises a liquid source supply unit, a carrier gas supply unit and an injection valve, wherein the liquid source supply unit is used to provide a liquid source, the carrier gas supply unit is used to provide a carrier gas, the injection valve comprises a liquid source inlet end, a carrier gas inlet end and an injection outlet, the liquid source supply unit is connected to the liquid source inlet end of the injection valve through a liquid supply pipeline, the carrier gas supply unit is connected to the carrier gas inlet end of the injection valve through a carrier gas pipeline, the carrier gas and the liquid source respectively enter the injection valve and are ejected from the injection outlet to form a liquid source reaction gas in an aerosol state; A main reaction chamber, wherein the main reaction chamber is used for the liquid source reaction gas to perform a thin film deposition process, wherein a first gas inlet is provided on the main reaction chamber, wherein the first gas inlet is connected to the injection outlet via a first gas inlet pipeline, and a control valve is provided on the first gas inlet pipeline, wherein the control valve is used to control the liquid source reaction gas to enter the main reaction chamber; A secondary reaction chamber, wherein a second air inlet is provided on the secondary reaction chamber, the second air inlet is connected to the injection outlet through a second air inlet pipeline, and the liquid source reaction gas enters the secondary reaction chamber through the second air inlet pipeline to perform a thin film deposition process; at least one process sensor is provided in the secondary reaction chamber, and the process sensor is used to monitor the process parameters of the secondary reaction chamber in the process of thin film deposition in real time; A control unit, wherein the control unit is electrically connected to the process sensor and the control valve respectively, and is used to collect the process parameters monitored by the process sensor in real time, and judge the stability of the liquid source reaction gas by comparing the process parameters with a preset threshold value, and the control unit controls the on-off of the control valve according to the judgment result.

2. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 1, characterized in that: The liquid source supply unit includes a liquid storage tank and a suction pipe. The liquid storage tank is filled with a liquid source to be vaporized. The lower end of the suction pipe is inserted below the liquid level of the liquid source. The upper end of the suction pipe is connected to the input end of the liquid supply pipeline. Pressurized gas is passed into the liquid storage tank so that the liquid source enters the injection valve from the suction pipe through the liquid supply pipeline.

3. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 2, characterized in that: The liquid supply pipeline is provided with a liquid flow controller, and the liquid flow controller is used to regulate the flow of the liquid source entering the injection valve.

4. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 1, characterized in that: A gas flow controller is arranged on the carrier gas pipeline, and the gas flow controller is used to regulate the flow of the carrier gas introduced into the injection valve.

5. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 1, characterized in that: The first air intake pipeline and the second air intake pipeline are both wrapped with a heating belt, and the heating belt is used to heat the first air intake pipeline and the second air intake pipeline.

6. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 1, characterized in that: The first air intake pipeline and the second air intake pipeline are connected to the injection outlet through a three-way valve, and the three-way valve includes an inlet end, a first outlet end, and a second outlet end. The inlet end is connected to the injection outlet through a main pipeline, the first outlet end is connected to the first air intake port through the first air intake pipeline, and the second outlet end is connected to the second air intake port through the second air intake pipeline.

7. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 1, characterized in that: The thin film deposition device further comprises a vacuum system, which is connected to the main reaction chamber and the auxiliary reaction chamber respectively and is used for evacuating the main reaction chamber and the auxiliary reaction chamber.

8. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 7, characterized in that: The process sensor integrates a pressure sensor, a radio frequency power sensor and a pumping speed sensor. The pressure sensor is used to monitor the gas pressure of the side reaction chamber in real time during the thin film deposition process. The radio frequency power sensor is used to monitor the reflected power and the loaded power of the plasma in real time during the thin film deposition process. The pumping speed sensor is used to monitor the pumping speed of the vacuum system in real time during the thin film deposition process.

9. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 1, characterized in that: The thin film deposition device also includes an external gas source, which is used to provide isolation gas. The external gas source is connected to the external gas source inlets of the main reaction chamber and the auxiliary reaction chamber through pipelines, respectively, and is used to provide isolation gas to the main reaction chamber and the auxiliary reaction chamber, respectively.

10. The thin film deposition device for real-time monitoring of liquid source reaction gas stability according to claim 1, characterized in that: The volume of the main reaction chamber is 5 to 10 times the volume of the auxiliary reaction chamber.

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