Miniature spectrometer device based on sulfur vacancy migration and preparation method thereof

Abstract

The invention discloses a miniature spectrometer device based on sulfur vacancy migration and a preparation method thereof, and relates to the technical field of miniature spectrometer devices, the miniature spectrometer device comprises a miniature spectrometer and a spectrum reconstruction model; the micro spectrometer comprises a substrate and a semiconductor electrode; the base body comprises a substrate and a sulfide layer which are sequentially stacked, sulfide of the sulfide layer is molybdenum sulfide, tungsten molybdenum sulfide or selenium molybdenum sulfide, the semiconductor electrode is located on the surface of the sulfide layer and comprises a source electrode and a drain electrode, the source electrode is located between the drain electrode and the sulfide layer, and the drain electrode, the source electrode and the sulfide layer are sequentially stacked; a sulfur vacancy is introduced below the surface, connected with the semiconductor electrode, in the sulfide layer through plasma soft etching; the spectrum reconstruction model is used for reconstructing the spectrum data output by the micro spectrometer and outputting the reconstructed spectrum data; the spectrum reconstruction model is obtained by training a neural network by adopting a training set. The stability of the spectrometer device can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of spectrometers, and particularly to a micro-spectrometer device based on sulfur vacancy migration and a preparation method thereof. Background Art

[0002] Spectrometers play an important role in scientific and industrial research, but their large volume and complex structure limit their use in portable and chip-level applications. These devices typically rely on large dispersive optical elements (such as gratings), detector or filter arrays, and long optical paths, which not only limit the miniaturization of the devices but also increase costs and power consumption. With the growing demand for portable spectral analysis devices, researchers have started to seek ways to reduce the system size to centimeter-scale or even sub-millimeter-scale. Since the 1990s, a variety of micro-spectrometer systems have emerged, which adopt different spectral feature strategies, including miniaturized dispersive optical elements, narrowband filters, Fourier transform systems, and micro-spectrometers based on computational techniques. These micro-spectrometers use mathematical algorithms for spectral reconstruction and can simultaneously process spectral components in the full spectral range on multiple detectors, but they are usually based on complex millimeter-scale filter arrays and are difficult to further miniaturize. To overcome these limitations, researchers have developed new types of micro-spectrometers that achieve high-sensitivity spectral measurements through electrically tunable transmission-mediated spectral responses. These devices can not only achieve high spectral resolution but also achieve a wide operating bandwidth close to desktop systems while maintaining a single-detector configuration, providing new possibilities for spectral analysis in chip-level and implantable applications. However, the light responsivity of related micro-spectrometers lacks the ability to be non-volatilely linearly adjusted, and its stability needs to be improved. Summary of the Invention

[0003] The purpose of the present application is to provide a micro-spectrometer device based on sulfur vacancy migration and a preparation method thereof, which can improve the stability of the spectrometer device.

[0004] To achieve the above purpose, the present application provides the following solutions: In a first aspect, the present application provides a micro-spectrometer device based on sulfur vacancy migration, including: a micro-spectrometer and a spectral reconstruction model; the micro-spectrometer includes a substrate and a semiconductor electrode; the substrate includes a substrate and a sulfide layer stacked in sequence, the sulfide of the sulfide layer is molybdenum sulfide, tungsten molybdenum sulfide or selenium molybdenum sulfide, the semiconductor electrode is located on the surface of the sulfide layer, the semiconductor electrode includes a source electrode and a drain electrode, the source electrode is located between the drain electrode and the sulfide layer, and the drain electrode, the source electrode and the sulfide layer are stacked in sequence; sulfur vacancies are introduced by plasma soft etching below the surface of the sulfide layer connected to the semiconductor electrode. The spectral reconstruction model is used to reconstruct the spectral data output by the micro spectrometer and output the reconstructed spectral data; the spectral reconstruction model is obtained by training a neural network with a training set.

[0005] In a second aspect, the present application provides a micro spectrometer device based on sulfur vacancy migration. The micro spectrometer device based on sulfur vacancy migration includes a micro spectrometer; the micro spectrometer includes a substrate and a semiconductor electrode; the substrate includes a substrate and a sulfide layer stacked in sequence, and the sulfide of the sulfide layer is molybdenum sulfide, tungsten molybdenum sulfide or selenium molybdenum sulfide. The semiconductor electrode is located on the surface of the sulfide layer. The semiconductor electrode includes a source electrode and a drain electrode. The source electrode is located between the drain electrode and the sulfide layer. The drain electrode, the source electrode and the sulfide layer are stacked in sequence; sulfur vacancies are introduced by plasma soft etching below the surface of the sulfide layer connected to the semiconductor electrode.

[0006] In a third aspect, the present application provides a preparation method for a micro spectrometer device based on sulfur vacancy migration. The preparation method for a micro spectrometer device based on sulfur vacancy migration is used to prepare the micro spectrometer device based on sulfur vacancy migration. The preparation method for a micro spectrometer device based on sulfur vacancy migration includes: Transfer molybdenum sulfide nanosheets onto the substrate, and coat photoresist on the molybdenum sulfide nanosheets to form a sulfide layer covered with photoresist; By etching the photoresist on the sulfide layer, a semiconductor electrode window is exposed on the sulfide layer; Use plasma to perform soft etching treatment on the semiconductor electrode window; Evaporate metal on the surface of the sulfide layer after plasma soft etching; Perform photoresist stripping on the surface of the sulfide layer after evaporating metal to obtain a source electrode and a drain electrode.

[0007] According to the specific embodiments provided by the present application, the following technical effects are disclosed: The present application provides a micro spectrometer device based on sulfur vacancy migration and a preparation method therefor. The substrate includes a substrate and a sulfide layer stacked in sequence. The source electrode and the drain electrode are both located on the surface of the sulfide layer; sulfur vacancies are introduced by plasma soft etching below the surface of the sulfide layer connected to the source electrode and the drain electrode. The sulfur vacancies will migrate under the action of an electric field, and the light response can be precisely regulated by controlling the sulfur vacancy migration. And by correcting the input spectral data through the spectral reconstruction model, the accuracy and efficiency of spectral analysis can be effectively improved, and good spectral response linearity can be maintained within a wide range of light intensities, improving the stability of the application of the micro spectrometer device. Description of the Drawings

[0008] To more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0009] Figure 1 It is a schematic structural diagram of a micro-spectral instrument device based on sulfur vacancy migration provided by an embodiment of the present application.

[0010] Figure 2 It is a schematic diagram of the preparation process of the MSM device in a micro-spectral instrument based on sulfur vacancy migration provided by an embodiment of the present application.

[0011] Figure 3 It is a spectral response characteristic curve of the MSM device based on MoS2 under illumination after being subjected to different voltage pulse conditions provided by an embodiment of the present application.

[0012] Figure 4 It is a spectral response characteristic curve of the MSM device based on MoSeS under illumination after being subjected to different voltage pulse conditions provided by an embodiment of the present application.

[0013] Figure 5 It is a spectral response characteristic curve of the MSM device based on MoWS2 under illumination after being subjected to different voltage pulse conditions provided by an embodiment of the present application.

[0014] Figure 6 It is a comparison diagram of the true values of the inversion spectrum and the true spectrum of the MSM device based on MoS2 before and after spectral reconstruction provided by an embodiment of the present application.

[0015] Figure 7 It is a comparison diagram of the true values of the inversion spectrum and the true spectrum of the MSM device based on MoWS2 before and after spectral reconstruction provided by an embodiment of the present application.

[0016] Figure 8 It is a comparison diagram of the true values of the inversion spectrum and the true spectrum of the MSM device based on MoSeS before and after spectral reconstruction provided by an embodiment of the present application.

[0017] Figure 9 It is a schematic diagram of the neural network model and the training process for spectral reconstruction of the micro-spectral instrument device based on sulfur vacancy migration provided by an embodiment of the present application.

[0018] Reference numerals: 1 - silicon layer, 2 - silicon dioxide layer, 3 - sulfide layer, 4 - source electrode, 5 - drain electrode, 6 - photoresist. Detailed implementation manners

[0019] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

[0020] To make the above objects, features, and advantages of the present application more obvious and understandable, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] The present application provides a micro-spectral instrument based on the migration of sulfur vacancies, as Figure 1 shown. The micro-spectral instrument based on the migration of sulfur vacancies includes a micro-spectrometer and a spectral reconstruction model. The micro-spectrometer includes a substrate and a semiconductor electrode. The substrate includes a substrate and a sulfide layer 3 stacked in sequence. The sulfide in the sulfide layer 3 is molybdenum sulfide (MoS2), molybdenum tungsten sulfide (MoWS2), or molybdenum selenium sulfide (MoSeS). The semiconductor electrode is located on the surface of the sulfide layer 3. The semiconductor electrode includes a source electrode 4 and a drain electrode 5. The source electrode 4 is located between the drain electrode 5 and the sulfide layer 3. The drain electrode 5, the source electrode 4, and the sulfide layer 3 are stacked in sequence. Sulfur vacancies are introduced by plasma soft etching below the surface of the sulfide layer 3 connected to the semiconductor electrode.

[0022] The spectral reconstruction model is used to reconstruct the spectral data output by the micro-spectrometer and output the reconstructed spectral data. The spectral reconstruction model is obtained by training a neural network using a training set.

[0023] The micro-spectrometer is a micro-spectrometer composed of two-dimensional metal, semiconductor, and metal (MSM). Among them, the two-dimensional metal refers to silicon and silicon dioxide that make up the substrate, the semiconductor refers to two-dimensional materials of molybdenum sulfide, molybdenum tungsten sulfide, or molybdenum selenium sulfide, and the metal refers to the source electrode 4 and the drain electrode 5.

[0024] In this application, the migration of sulfur vacancies in MoS2 is regulated by an electric field. Under the action of the electric field, electrons will move towards the positive electrode of the electric field, and sulfur vacancies will tend to move in the opposite direction, thereby realizing the migration of sulfur vacancies in the direction of the electric field. By regulating the migration of sulfur vacancies in MoS2, the Schottky barrier at the metal / semiconductor interface is adjusted. The device of this application can adjust its spectral response within milliseconds and achieve high-resolution spectral reconstruction. The micro-spectrometer based on the structure of this application exhibits a high spectral resolution of 3nm - 5nm, and a high responsivity of 369.2 mA / W ensures the measurement accuracy under low light intensity conditions. The device of this application can regulate 11 different light response states, and the storage time is greater than 1000 seconds, which is conducive to realizing dynamic spectral analysis and real-time monitoring applications. In addition, the micro-spectrometer provided by this application shows excellent spectral response linearity in the wavelength range of 500nm - 1000nm, which is beneficial to accurately reconstruct the spectral distribution under different light sources.

[0025] In this application, the input spectral signal is thoroughly preprocessed, and the preprocessing includes noise elimination and normalization processes to ensure that the data quality reaches the optimal level. Subsequently, the preprocessed signal is merged with the target spectral data to form a dataset for training the neural network model. This dataset integrates all key information and lays a foundation for the spectral reconstruction task. The dataset includes a training set.

[0026] Each sample in the training set includes input data and label data. The input data is the light information emitted by the sample substance, and the label data is the target spectral data corresponding to the sample substance. The target spectral data is a known reference spectrum, specifically the spectral data predefined according to the known spectral characteristics of the sample substance.

[0027] As Figure 9 shown, the deep learning architecture of the neural network includes an input layer, three hidden layers, and an output layer connected in sequence. The input layer has 1024 neurons, and the 1024 neurons in the input layer match the number of features in the dataset. Figure 9 where is the first input feature, is the nth input feature. The three hidden layers have 512, 256, and 128 neurons in sequence, aiming to capture the complex non-linear relationships in the data. Among them, each hidden layer uses the ReLU function to introduce non-linearity and enhance the expression and learning ability of the model. The output layer uses a linear activation function, which is specifically used to perform the regression task, that is, the inversion of the spectrum. 、 、 、 and are all the output spectral data.

[0028] To prevent the model from overfitting to the training data, this application introduces the Dropout technique as a regularization method. By randomly discarding the outputs of some neurons, Dropout helps improve the generalization ability of the model and ensures that the model can maintain excellent performance on unseen data.

[0029] The number of training epochs of the neural network is Epochs = 50. During the training process, the mean squared error is used as the loss function. The mean squared error loss function can quantify the difference between the model's predicted values and the true values, providing a clear direction for model optimization.

[0030] After training, the spectral reconstruction model can learn the mapping relationship between the input features and the target spectrum, thus forming an efficient regression function that can accurately map new input features to the corresponding spectral outputs, achieving accurate spectral reconstruction. The spectral data of the MoS2-based MSM device before and after spectral reconstruction by the spectral reconstruction model are as Figure 6 shown. The spectral data of the MoWS2-based MSM device before and after spectral reconstruction by the spectral reconstruction model are as Figure 7 shown. The spectral data of the MoSeS-based MSM device before and after spectral reconstruction by the spectral reconstruction model are as Figure 8 shown.

[0031] When the two-dimensional material is molybdenum disulfide, the sulfide layer 3 is composed of multiple stacked molybdenum disulfide nanosheets; the diameter range of each molybdenum disulfide nanosheet is 8μm - 12μm, and the thickness is 15nm - 25nm; the thickness of the sulfide layer 3 is 8nm - 45nm.

[0032] The material of the source electrode 4 is chromium (Cr), the material of the drain electrode 5 is gold (Au), the thickness range of the source electrode 4 is 2nm - 4nm, the thickness range of the drain electrode 5 is 25nm - 45nm, more precisely, the thickness range of the drain electrode 5 is 35nm - 40nm. The overall source electrode 4 and drain electrode 5 are preferably arranged at both ends of the sulfide layer 3, as Figure 1 shown.

[0033] The substrate includes a silicon layer 1 and a silicon dioxide layer 2. One side of the silicon dioxide layer 2 is attached to the silicon layer 1, and the other side is attached to the sulfide layer 3; the thickness of the silicon layer 1 is 475μm, the thickness range of the silicon dioxide layer 2 is 280nm - 300nm, more precisely, the thickness of the silicon dioxide layer 2 is 290nm.

[0034] The silicon layer 1 specifically refers to p-type heavily doped silicon.

[0035] In this application, plasma soft etching is specifically implemented using a bench-top ultra-benchmark two-dimensional material plasma soft etching system, and the model of the bench-top ultra-benchmark two-dimensional material plasma soft etching system is nanoETCH. The bench-top ultra-benchmark two-dimensional material plasma soft etching system is used for surface cleaning, rather than plasma bombardment or etching.

[0036] This application proposes a new method for regulating the spectrum of a two-dimensional two-terminal device structure, which is a process of completing spectrum reconstruction by measuring an unknown spectrum using the device. The area range of the spectrometer implemented in this application is 20μm 2 ~100μm 2 , providing a new method for the miniaturization and low power consumption of spectrometers.

[0037] The miniature spectrometer obtained in this application, that is, the spectral response characteristic curve of the MSM device based on MoS2 after illumination under different voltage pulse conditions is as Figure 3 shown. Under different processing conditions, the light response characteristics of the device show significant differences. In the initial state, the device has a significant photocurrent response in the wavelength range of 500 nm to 700 nm, and the maximum value reaches about 2.0 nA, indicating that the device has good light response performance; when a 10V pulse is applied for 10s, the photocurrent response decreases, and the maximum value drops to about 1.0 nA, showing a certain positive voltage regulation ability; when a -10V pulse is applied for 10s, the photocurrent further decreases, and the maximum value is about 0.5 nA, indicating that the inhibitory effect of negative voltage on the photocurrent is more significant. The results show that the MSM device based on MoS2 obtained in the embodiment shows good photocurrent regulation ability under the action of an externally applied pulsed voltage.

[0038] A miniature spectrometer device based on sulfur vacancy migration in this application is to be applied in the fields of spectral analysis and intelligent detection. The specific implementation of the two-dimensional material in the sulfide layer 3 is the soft etching process of nanomaterials, which does not damage the lattice quality of the material. Sulfur vacancies are introduced through plasma soft etching and will migrate under the action of an electric field; when the electric field is removed, the sulfur vacancies can also show good stability. The device in this application shows good spectral response characteristics in the visible and near-infrared bands, and can precisely regulate the light response by controlling the migration of sulfur vacancies. Combining with a neural network model for spectrum reconstruction, the accuracy and efficiency of spectral analysis are effectively improved through deep learning algorithms. The device in this application still has a high light response rate and stability under low light intensity conditions, can maintain good spectral response linearity in a wide light intensity range, and is suitable for high-precision dynamic spectral analysis, real-time monitoring and portable applications, especially in the fields of intelligent detection, medical diagnosis and environmental monitoring, etc., with broad application prospects.

[0039] In an exemplary embodiment, Example 1 provides a micro-spectral instrument device based on sulfur vacancy migration. The micro-spectral instrument device based on sulfur vacancy migration includes a micro-spectrometer. The micro-spectrometer includes a substrate and a semiconductor electrode. The substrate includes a substrate and a sulfide layer 3 stacked in sequence. The sulfide of the sulfide layer 3 is molybdenum sulfide, molybdenum tungsten sulfide, or molybdenum selenium sulfide. The semiconductor electrode is located on the surface of the sulfide layer 3. The semiconductor electrode includes a source electrode 4 and a drain electrode 5. The source electrode 4 is located between the drain electrode 5 and the sulfide layer 3. The drain electrode 5, the source electrode 4, and the sulfide layer 3 are stacked in sequence. Sulfur vacancies are introduced by plasma soft etching below the surface of the sulfide layer 3 connected to the semiconductor electrode.

[0040] In an exemplary embodiment, a method for preparing a micro-spectral instrument device based on sulfur vacancy migration is provided. The method for preparing a micro-spectral instrument device based on sulfur vacancy migration is used to prepare the micro-spectral instrument device based on sulfur vacancy migration described in Example 1. As Figure 2 shown, the method for preparing a micro-spectral instrument device based on sulfur vacancy migration includes Step 1 to Step 5.

[0041] Step 1: Transfer molybdenum sulfide nanosheets onto a substrate, and coat a photoresist on the molybdenum sulfide nanosheets to form a sulfide layer covered with the photoresist.

[0042] The substrate structure is as shown in part (a) of Figure 2 . The structure of the sulfide layer covered with the photoresist is as shown in part (b) of Figure 2 .

[0043] Step 2: Etch the photoresist on the sulfide layer to obtain an exposure pattern, and expose a semiconductor electrode window on the sulfide layer.

[0044] Step 3: Use plasma to perform a soft etching treatment on the semiconductor electrode window, as shown in parts (c) and (d) of Figure 2 . Part (c) is before the plasma soft etching, and part (d) is after the plasma soft etching.

[0045] Step 4: Evaporate metal on the surface of the sulfide layer after the plasma soft etching.

[0046] Step 5: Strip the photoresist from the surface of the sulfide layer after evaporating the metal to obtain semiconductor electrodes, namely the source electrode and the drain electrode, thereby obtaining an MSM device based on MoS2, that is, the micro-spectrometer of the present application, as shown in part (e) of Figure 2 .

[0047] The semiconductor electrode window is subjected to soft etching treatment using plasma, specifically including: using a bench-top ultra-standard two-dimensional material plasma soft etching system, and subjecting the semiconductor electrode window to soft etching treatment with O2 plasma and Ar plasma in sequence.

[0048] The etching time of the O2 plasma is 10s to 18s, and a more precise preferred value is 15s; the soft etching time range of the Ar plasma is 35s to 55s, and a more precise preferred range is 40s; the vacuum condition range for plasma soft etching is 1×10 -7 Torr to 10×10 -7 Torr, and a more precise preferred range is 1×10 -7 Torr to 2×10 -7 Torr; the flow rate range of the two gases is 20sccm to 40sccm, and a more precise preferred range is 25sccm to 40sccm, and the power of the bench-top ultra-standard two-dimensional material plasma soft etching system is 5W to 10W.

[0049] The preferred temperature range for metal evaporation is 1150°C to 1550°C, and a more precise preferred range is 1200°C to 1400°C; the preferred evaporation rate range is 0.1 Å / s to 0.5 Å / s, and a more precise preferred range is 0.3 Å / s to 0.4 Å / s; the preferred vacuum degree range is 7×10 -7 Torr to 1×10 -6 Torr, and a more precise preferred range is 7×10 -7 Torr to 9×10 -7 Torr. Cr and Au are used for metal evaporation.

[0050] The etching method of photoresist 6 uses electron beam exposure, and the stripping method of photoresist 6 is to soak it in an acetone solution, and the preferred impregnation time range is 25min to 65min, and a more precise preferred range is 35min to 50min. After removing photoresist 6, an MSM micro spectrometer is obtained. Photoresist 6 specifically refers to polymethyl methacrylate (PMMA) photoresist.

[0051] In this application, a mechanical stripping method is used to prepare molybdenum sulfide nanosheets, that is, a molybdenum sulfide bulk material thin sheet is placed on the tape and repeatedly pasted and folded to obtain molybdenum sulfide nanosheets. It is recommended to use a blue transparent tape for transfer. Photoresist 6 is recommended to use polymethyl methacrylate and is applied by spin coating. The preferred spin coating speed range is 3800r / min to 4700r / min, and a more precise preferred value is 4500r / min; after applying photoresist 6, it is recommended to perform a thermal curing treatment at 125°C to 185°C, and a more precise preferred temperature range is 145°C to 165°C; the preferred time range is 5min to 10min, and a more precise preferred range is 6min to 8min.

[0052] In an exemplary embodiment, a method for preparing a micro-spectroscopic instrument based on sulfur vacancy migration includes: First, the bulk MoS2 is exfoliated into nano-scale flakes by applying mechanical exfoliation technology. Subsequently, the obtained MoS2 flakes are immersed in a preheated acetone solution for 1 h to thoroughly remove the tape residue on their surfaces. The clean MoS2 flakes are transferred to a substrate, and PMMA photoresist 6 is applied thereon by spin coating technology at a condition of 4500 r / min, and then thermally cured at 150 °C for 5 minutes to form a photoresist 6 layer. The source and drain electrodes are located by electron beam lithography (EBL), and then, in a vacuum environment of 2×10 -7 Torr, etching is performed using O2 and Ar plasmas for 15 s and 40 s respectively, and the gas flow rate is set at 30 sccm. After etching, a 3-nm-thick Cr layer and a 40-nm-thick Au layer are sequentially deposited by thermal evaporation process under a vacuum of 6×10 -7 Torr and at a condition of 1300 °C.

[0053] Finally, source and drain metal electrodes are formed by a lift-off process in an acetone solution, thereby constructing an MSM spectroscopic instrument based on sulfur vacancy migration.

[0054] In this application, the process of spectral reconstruction can also be achieved by using MoWS2 and MoSeS materials.

[0055] Example 1: Replace molybdenum sulfide in the above embodiment with molybdenum selenosulfide, and perform photocurrent testing on the micro-spectrometer obtained using molybdenum selenosulfide (MSM device based on MoSeS), as Figure 4 shown. In the initial state, the MSM device based on MoSeS has a high photocurrent response in the wavelength range of 500 nm to 700 nm, with a maximum value of approximately 8.5 nA, showing good initial optoelectronic response; when a -10V pulse is applied for 10 seconds, the photocurrent response decreases, and the maximum value drops to approximately 7.5 nA, but the change amplitude is small; when a 10V pulse is applied for 10 seconds, the photocurrent further decreases, and the maximum value is approximately 6.5 nA, but the decrease amplitude compared to the initial state is limited. The results show that the ability to regulate the photocurrent of the MSM device based on MoSeS in Example 1 is weaker than that of the MSM device based on MoS2 in the embodiment under the action of an externally applied pulsed voltage.

[0056] Example 2: Replace molybdenum sulfide in the above embodiment with molybdenum tungstensulfide. The specific operation is the same as that of the above embodiment, except that molybdenum sulfide is replaced with molybdenum tungstensulfide during device preparation, and the remaining steps are exactly the same.

[0057] Perform photocurrent testing on the MSM device based on MoWS2 obtained in Example 2, and the curve is as Figure 5As shown. Under the initial conditions, the photocurrent of the MoWS2-based MSM device reaches its peak in the wavelength range of 500 nm to 700 nm, and the maximum photocurrent is about 2.5 nA, showing a high photoelectric response ability. After applying 10 V and -10 V pulse voltages for 10 s, the photocurrents decrease to about 0.5 nA and about 0.3 nA respectively. Compared with the above embodiments, although the photocurrent of the MoWS2-based MSM device is higher in the initial state, the regulation amplitude of its photocurrent after the action of the pulse voltage is smaller.

[0058] This application compares the effects of spectral reconstruction of three materials, molybdenum sulfide, molybdenum tungsten sulfide, and molybdenum selenium sulfide. The effects of molybdenum sulfide, molybdenum tungsten sulfide, and molybdenum selenium sulfide on spectral reconstruction decrease in turn, and the spectral reconstruction effect of the MoS2-based MSM device is the best. Thus, for the migration of sulfur vacancies in different materials, their spectral evolution shows significant differences. In devices with electric-field-directed driving of vacancy migration, the higher the similarity of spectral evolution (MSM device based on MoSeS > MSM device based on MoS2 > MSM device based on MoWS2), the worse the spectral inversion effect (MSM device based on MoWS2 > MSM device based on MoS2 > MSM device based on MoSeS), because the degree of non-linear fitting it can provide is lower.

[0059] The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity of description, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, it should be considered as the scope described in this specification.

[0060] In this article, specific examples are used to elaborate on the principles and implementation methods of this application. The descriptions of the above embodiments are only used to help understand the method and its core idea of this application; at the same time, for those of ordinary skill in the art, according to the idea of this application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be construed as a limitation to this application.

Claims

1. A micro-spectroscopic device based on sulfur vacancy migration, characterized in that: The micro-spectrometer device based on sulfur vacancy migration includes a micro-spectrometer and a spectrum reconstruction model; the micro-spectrometer includes a substrate and a semiconductor electrode; the substrate includes a substrate and a sulfide layer stacked in sequence, the sulfide of the sulfide layer is molybdenum sulfide, molybdenum tungsten sulfur or molybdenum selenium sulfur, the semiconductor electrode is located on the surface of the sulfide layer, the semiconductor electrode includes a source electrode and a drain electrode, the source electrode is located between the drain electrode and the sulfide layer, the drain electrode, the source electrode and the sulfide layer are stacked in sequence; sulfur vacancies are introduced into the sulfide layer below the surface connected to the semiconductor electrode by plasma soft etching; The spectrum reconstruction model is used to reconstruct the spectrum data output by the micro-spectrometer and output the reconstructed spectrum data; the spectrum reconstruction model is obtained by training a neural network using a training set.

2. The micro-spectroscopic device based on sulfur vacancy migration according to claim 1, characterized in that: Each sample in the training set includes input data and label data, the input data is light information emitted by the sample material, and the label data is target spectrum data corresponding to the sample material.

3. The micro-spectroscopic device based on sulfur vacancy migration according to claim 1, characterized in that: When the two-dimensional material is molybdenum sulfide, the sulfide layer is composed of a plurality of stacked molybdenum sulfide nanosheets; the diameter of each molybdenum sulfide nanosheet ranges from 8 μm to 12 μm, and the thickness ranges from 15 nm to 25 nm; the thickness of the sulfide layer ranges from 8 nm to 45 nm.

4. The micro-spectroscopic device based on sulfur vacancy migration according to claim 1, characterized in that: The material of the source electrode is chromium, the material of the drain electrode is gold, the thickness of the source electrode is in the range of 2nm to 4nm, and the thickness of the drain electrode is in the range of 25nm to 45nm.

5. The micro-spectroscopic device based on sulfur vacancy migration according to claim 1, characterized in that: The substrate comprises a silicon layer and a silicon dioxide layer, one side of the silicon dioxide layer is bonded to the silicon layer, and the other side is bonded to the sulfide layer; the thickness of the silicon layer is 475 μm, and the thickness of the silicon dioxide layer ranges from 280 nm to 300 nm.

6. A micro-spectroscopic device based on sulfur vacancy migration, characterized in that: The micro-spectrometer device based on sulfur vacancy migration includes a micro-spectrometer; the micro-spectrometer includes a substrate and a semiconductor electrode; the substrate includes a substrate and a sulfide layer stacked in sequence, the sulfide of the sulfide layer is molybdenum sulfide, molybdenum tungsten sulfur or molybdenum selenium sulfur, the semiconductor electrode is located on the surface of the sulfide layer, the semiconductor electrode includes a source electrode and a drain electrode, the source electrode is located between the drain electrode and the sulfide layer, the drain electrode, the source electrode and the sulfide layer are stacked in sequence; sulfur vacancies are introduced into the sulfide layer below the surface connected to the semiconductor electrode by plasma soft etching.

7. A method for preparing a micro-spectroscopic device based on sulfur vacancy migration, characterized in that: The method for preparing the micro-spectroscopic instrument device based on sulfur vacancy migration is used to prepare the micro-spectroscopic instrument device based on sulfur vacancy migration according to claim 6, and the method for preparing the micro-spectroscopic instrument device based on sulfur vacancy migration comprises: transferring the molybdenum sulfide nanosheets onto a substrate, coating the molybdenum sulfide nanosheets with a photoresist to form a sulfide layer covered with the photoresist; Exposing a semiconductor electrode window on the sulfide layer by etching the photoresist on the sulfide layer; Using plasma to soft-etch the semiconductor electrode window; Vapor depositing metal on the surface of the sulfide layer after plasma soft etching; The photoresist is stripped off from the surface of the sulfide layer after metal evaporation to obtain a source electrode and a drain electrode.

8. The method for preparing a micro-spectroscopic device based on sulfur vacancy migration according to claim 7, characterized in that: The semiconductor electrode window is soft-etched using plasma, specifically including: A desktop ultra-benchmark two-dimensional material plasma soft etching system is used to etch the semiconductor electrode window in turn using O2 plasma and Ar plasma; The etching time of O2 plasma is in the range of 10s to 18s, the soft etching time of Ar plasma is in the range of 35s to 55s, and the vacuum condition of plasma soft etching is in the range of 1×10 -7 ~10×10 -7 Torr, the gas flow range is 20sccm~40sccm, and the power of the desktop ultra-benchmark two-dimensional material plasma soft etching system is 5W~10W.

9. The method for preparing a micro-spectroscopic device based on sulfur vacancy migration according to claim 7, characterized in that: The temperature range of metal evaporation is 1200℃~1400℃, the evaporation rate range is 0.3Å / s~0.4Å / s, and the vacuum range of the evaporation process is 7×10 -7 Torr~9×10 -7 Torr.

10. The method for preparing a micro-spectroscopic device based on sulfur vacancy migration according to claim 7, characterized in that: The photoresist is stripped from the surface of the sulfide layer after metal evaporation to obtain a source electrode and a drain electrode, which specifically includes: The sulfide layer after metal evaporation is immersed in an acetone solution to strip the photoresist to obtain a source electrode and a drain electrode.

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