Semiconductor laser element with carrier localization layer

Abstract

The invention provides a semiconductor laser element with a carrier localization layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the carrier localization layers of a multi-layer structure are arranged in the semiconductor laser element, the multiple carrier localization layers are arranged in the multiple lower limiting layers in a penetrating and inserting mode, and meanwhile, the Philips ionization degree distribution characteristic and the saturated electron drift rate distribution characteristic of each carrier localization layer are limited; the quantum dot superlattice interface with irregular layers is constructed, interface charge transfer is regulated and controlled, cooperative modulation of carrier density and carrier mobility is achieved, the carrier localization effect is improved, the coupling rate from the pumping energy level to the laser upper energy level is improved, the stimulated radiation efficiency of the active layer is improved, population inversion is accelerated, and limiting factors are improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and particularly to a semiconductor laser element with a carrier localization layer. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the W level. While nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the mW level.

[0005] 2) The operating current density of lasers reaches KA / cm2, which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect.

[0006] 3) The light-emitting diode undergoes spontaneous transition radiation, which is incoherent light that jumps from a high energy level to a low energy level without external influence. While a laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference between the electron transitions, generating completely identical coherent light of the photon and the induced photon.

[0007] 4) The principles are different: The light-emitting diode undergoes radiative recombination and emits light when electrons and holes jump to the quantum well or p-n junction under the action of an external voltage. While a laser can only lasing when the lasing conditions are met. It must satisfy the carrier population inversion distribution in the active region. The stimulated emission light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] The nitride semiconductor laser has the following problems: an increase in the In composition of the quantum well will cause fluctuations in the In composition and strain, broaden the gain spectrum of the laser, decrease the peak gain, resulting in an increase in the threshold current of the laser and a decrease in the slope efficiency; an increase in the In composition of the quantum well leads to poor thermal stability, and the growth of the high-temperature p-type semiconductor and the confinement layer will cause thermal degradation of the active layer, reducing the quality of the active layer and the interface quality; the high defect density inside the active layer, the large miscibility gap between InN and GaN, the phase separation and segregation of InN, thermal degradation, and the unsatisfactory crystal quality result in unsatisfactory quantum well quality and interface quality, enhancing the non-radiative recombination centers. Summary of the Invention

[0009] To solve one of the above technical problems, the present invention provides a semiconductor laser element with a carrier localization layer.

[0010] An embodiment of the present invention provides a semiconductor laser element with a carrier localization layer, which includes a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer sequentially arranged from bottom to top. The lower confinement layer includes a first lower confinement layer, a second lower confinement layer, and a third lower confinement layer sequentially arranged from bottom to top. The semiconductor laser element with a carrier localization layer further includes a carrier localization layer. The carrier localization layer includes a first carrier localization layer, a second carrier localization layer, and a third carrier localization layer. The first carrier localization layer is disposed between the first lower limit layer and the second lower confinement layer. The second carrier localization layer is disposed between the second lower confinement layer and the third lower confinement layer. The third carrier localization layer is disposed between the third lower confinement layer and the lower waveguide layer. The first carrier localization layer, the second carrier localization layer, and the third carrier localization layer all have the Philips ionization degree distribution characteristic and the saturated electron drift rate distribution characteristic;

[0011] The Philips ionization degree of the first carrier localization layer has a third quadrant curve distribution with the function y1 = A + B * (e x1 + e -x1 ) / (e x1 - e -x1 ) The Philips ionization degree of the second carrier localization layer has a curve distribution with the function y2 = C + D * lnx2 / e x2 The Philips ionization degree of the third carrier localization layer has a first quadrant curve distribution with the function y3 = E + F * x3 / lnx3;

[0012] The saturated electron drift rate of the first carrier localization layer has a function y4 = G + H * e x1In the third quadrant curve distribution; the saturated electron drift rate of the second carrier localization layer has a curve distribution of the function y5 = I + J * lnx2 / x2; the saturated electron drift rate of the third carrier localization layer has a function y6 = K + L * sinx3 / x3 2 In the first quadrant curve distribution;

[0013] where x1 is the depth of the first carrier localization layer in the direction of the second lower limiting layer, x2 is the depth of the second carrier localization layer in the direction of the third lower limiting layer, and x3 is the depth of the third carrier localization layer in the direction of the lower waveguide layer.

[0014] Preferably, the Phillips ionization degree of the first carrier localization layer is d, the Phillips ionization degree of the second carrier localization layer is e, and the Phillips ionization degree of the third carrier localization layer is f, where: 0.1 < e < f < d < 10.

[0015] Preferably, the saturated electron drift rate of the first carrier localization layer is g, the saturated electron drift rate of the second carrier localization layer is h, and the saturated electron drift rate of the third carrier localization layer is i, where: 5E6 (cm / s) < h < i < g < 5E8 (cm / s).

[0016] Preferably, the first carrier localization layer, the second carrier localization layer, and the third carrier localization layer also have electron affinity distribution characteristics and electron mobility distribution characteristics;

[0017] The electron affinity of the first carrier localization layer has a function y7 = M + N * sinx1 / x1 2 In the third quadrant curve distribution; the electron affinity of the second carrier localization layer has a function y8 = O + P * x2 / e x2 Curve distribution; the electron affinity of the third carrier localization layer has a function y9 = Q + R * lnx3 + 1 / x3 - 1 In the first quadrant curve distribution;

[0018] The electron mobility of the first carrier localization layer has a function y 10 = S + T * e x1 / lnx1 curve distribution; the electron mobility of the second carrier localization layer has a function y 11 = U + V * lnx1 / e x1 Curve distribution; the electron mobility of the third carrier localization layer has a function y 12 = W + Z * (e x3 + e -x3 ) / (e x3 - e -x3 ) In the first quadrant curve distribution.

[0019] Preferably, the electron affinity of the first carrier localization layer is j, the electron affinity of the second carrier localization layer is k, and the electron affinity of the third carrier localization layer is l, where: 0.5 (eV) < k < l < j < 20 (eV).

[0020] Preferably, the electron mobility of the first carrier localization layer is m, the electron mobility of the second carrier localization layer is n, and the electron mobility of the third carrier localization layer is p, where: 5 (cm 2 / v / s) < n < p < m < 8000 (cm 2 / v / s).

[0021] Preferably, the carrier localization layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0022] Preferably, the lower confinement layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, AlInN, with a thickness of 50 nm to 5000 nm and an Si doping concentration of 1E18 cm -3 to 1E20 cm -3 ;

[0023] The upper confinement layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, AlInN, with a thickness of 20 nm to 1000 nm and an Mg doping concentration of 1E18 cm -3 to 1E20 cm -3 .

[0024] Preferably, the lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, AlInGaN, with a thickness of 50 nm to 1000 nm and an Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

[0025] Preferably, the substrate includes any one of sapphire, silicon, CuW, Mo, TiW, Cu, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0026] The beneficial effects of the present invention are as follows: In the semiconductor laser element of the present invention, a carrier localization layer with a multi-layer structure is provided, and the multi-layer carrier localization layers are respectively interspersed in the multi-layer lower confinement layers. At the same time, the Philips ionization degree distribution characteristics and the saturated electron drift rate distribution characteristics of each layer of the carrier localization layer are defined to construct a layered irregular quantum dot superlattice interface, regulate the interfacial charge transfer, realize the coordinated modulation of the carrier density and the carrier mobility, enhance the carrier localization effect, enhance the coupling rate from the pump energy level to the laser upper energy level, enhance the stimulated emission efficiency of the active layer, accelerate the population inversion, and enhance the confinement factor. Description of the Drawings

[0027] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0028] Figure 1 is a schematic structural diagram of a semiconductor laser element with a carrier localization layer according to an embodiment of the present invention;

[0029] Figure 2 is a SIMS secondary ion mass spectrum of a semiconductor laser element with a carrier localization layer according to an embodiment of the present invention.

[0030] Reference Numerals:

[0031] 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, upper confinement layer; 106, carrier localization layer;

[0032] 101a, first lower confinement layer; 101b, second lower confinement layer; 101c, third lower confinement layer;

[0033] 106a, first carrier localization layer; 106b, second carrier localization layer; 106c, third carrier localization layer. Detailed Embodiments

[0034] In order to make the technical solutions and advantages in the embodiments of the present application clearer and more understandable, the exemplary embodiments of the present application will be further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than an exhaustive list of all embodiments. It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0035] As Figure 1 and Figure 2 shown, this embodiment provides a semiconductor laser element with a carrier localization layer, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 arranged in sequence from bottom to top. A carrier localization layer 106 is also provided in the semiconductor laser element with the carrier localization layer.

[0036] Specifically, in this embodiment, the semiconductor laser element with the carrier localization layer is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 arranged in sequence from bottom to top. Among them, the lower confinement layer 101 is a multi-layer structure, including a first lower confinement layer 101a, a second lower confinement layer 101b, and a third lower confinement layer 101c, and the first lower confinement layer 101a, the second lower confinement layer 101b, and the third lower confinement layer 101c are arranged in sequence from bottom to top. A carrier localization layer 106 is also provided in the semiconductor laser element of the carrier localization layer 106. The carrier localization layer 106 is also a multi-layer structure, including a first carrier localization layer 106a, a second carrier localization layer 106b, and a third carrier localization layer 106c. Moreover, the first carrier localization layer 106a, the second carrier localization layer 106b, and the third carrier localization layer 106c are respectively interspersed between the first lower confinement layer 101a, the second lower confinement layer 101b, and the third lower confinement layer 101c. That is, the first carrier localization layer 106a is arranged between the first lower limit layer and the second lower confinement layer 101b, the second carrier localization layer 106b is arranged between the second lower confinement layer 101b and the third lower confinement layer 101c, and the third carrier localization layer 106c is arranged between the third lower confinement layer 101c and the lower waveguide layer 102.

[0037] In the multi-layer carrier localization layer 106, the first carrier localization layer 106a, the second carrier localization layer 106b, and the third carrier localization layer 106c all have the Philips ionization degree distribution characteristic and the saturated electron drift rate distribution characteristic, and the specific manifestations are as follows:

[0038] Philips ionization degree distribution:

[0039] The Phillips ionization degree of the first carrier localization layer 106a has a function y1 = A + B*(e x1 + e -x1 ) / (e x1 - e -x1 ) with a third quadrant curve distribution;

[0040] The Phillips ionization degree of the second carrier localization layer 106b has a function y2 = C + D*lnx2 / e x2 with a curve distribution;

[0041] The Phillips ionization degree of the third carrier localization layer 106c has a function y3 = E + F*x3 / lnx3 with a first quadrant curve distribution;

[0042] Saturation electron drift rate distribution:

[0043] The saturation electron drift rate of the first carrier localization layer 106a has a function y4 = G + H*e x1 / x1 with a third quadrant curve distribution;

[0044] The saturation electron drift rate of the second carrier localization layer 106b has a function y5 = I + J*lnx2 / x2 with a curve distribution;

[0045] The saturation electron drift rate of the third carrier localization layer 106c has a function y6 = K + L*sinx3 / x3 2 with a first quadrant curve distribution;

[0046] where x1 is the depth of the first carrier localization layer 106a in the direction of the second lower confinement layer 101b, x2 is the depth of the second carrier localization layer 106b in the direction of the third lower confinement layer 101c, and x3 is the depth of the third carrier localization layer 106c in the direction of the lower waveguide layer 102.

[0047] In this embodiment, a carrier localization layer 106 with a multi-layer structure is provided in the semiconductor laser element, and the multi-layer carrier localization layers 106 are respectively interspersed in the multi-layer lower confinement layers 101. At the same time, the Phillips ionization degree distribution characteristics and the saturation electron drift rate distribution characteristics of each carrier localization layer 106 are defined to construct a layered irregular quantum dot superlattice interface, regulate the interfacial charge transfer, realize the co-modulation of the carrier density and the carrier mobility, enhance the carrier localization effect, enhance the coupling rate from the pump energy level to the laser upper energy level, enhance the stimulated emission efficiency of the active layer 103, accelerate the population inversion, and enhance the confinement factor.

[0048] In some alternative embodiments, the Phillips ionization degrees in the first carrier localization layer 106a, the second carrier localization layer 106b, and the third carrier localization layer 106c also have the following relationship:

[0049] The Phillips ionization degree of the first carrier localization layer 106a is d, the Phillips ionization degree of the second carrier localization layer 106b is e, and the Phillips ionization degree of the third carrier localization layer 106c is f, where: 0.1 < e < f < d < 10.

[0050] In some alternative embodiments, the saturated electron drift rates in the first carrier localization layer 106a, the second carrier localization layer 106b, and the third carrier localization layer 106c also have the following relationship:

[0051] The saturated electron drift rate of the first carrier localization layer 106a is g, the saturated electron drift rate of the second carrier localization layer 106b is h, and the saturated electron drift rate of the third carrier localization layer 106c is i, where: 5E6 (cm / s) < h < i < g < 5E8 (cm / s).

[0052] In some alternative embodiments, the first carrier localization layer 106a, the second carrier localization layer 106b, and the third carrier localization layer 106c also have electron affinity distribution characteristics and electron mobility distribution characteristics, which are specifically manifested as:

[0053] Electron affinity distribution:

[0054] The electron affinity of the first carrier localization layer 106a has a function y7 = M + N * sinx1 / x1 2 Third quadrant curve distribution;

[0055] The electron affinity of the second carrier localization layer 106b has a function y8 = O + P * x2 / e x2 Curve distribution;

[0056] The electron affinity of the third carrier localization layer 106c has a function y9 = Q + R * lnx3 + 1 / x3 - 1 first quadrant curve distribution;

[0057] Electron mobility distribution:

[0058] The electron mobility of the first carrier localization layer 106a has a function y 10 = S + T * e x1 / lnx1 curve distribution;

[0059] The electron mobility of the second carrier localization layer 106b has a function y 11 = U + V * lnx1 / e x1 Curve distribution;

[0060] The electron mobility of the third carrier localization layer 106c has a function y 12= W + Z * (e x3 + e -x3 ) / (e x3 - e -x3 ) First quadrant curve distribution.

[0061] By limiting the electron affinity distribution and electron mobility distribution in each carrier localization layer 106, the In component fluctuation can be suppressed, the crystal quality and interface quality of the laser can be improved, the point defect density and interface state density can be reduced, phonon transport can be inhibited, the thermoelectric power factor can be reduced, the heat dissipation ability can be improved and thermal degradation can be improved, the laser temperature quenching and laser fracture problems can be improved, and the carrier transport can be regulated, the refractive index dispersion of the laser element can be improved, the confinement factor of the laser element can be increased, the mode gain and peak gain can be increased.

[0062] In some optional embodiments, the electron affinities of the first carrier localization layer 106a, the second carrier localization layer 106b, and the third carrier localization layer 106c also have the following relationship:

[0063] The electron affinity of the first carrier localization layer 106a is j, the electron affinity of the second carrier localization layer 106b is k, and the electron affinity of the third carrier localization layer 106c is l, where: 0.5 (eV) < k < l < j < 20 (eV).

[0064] In some optional embodiments, the electron mobilities of the first carrier localization layer 106a, the second carrier localization layer 106b, and the third carrier localization layer 106c also have the following relationship:

[0065] The electron mobility of the first carrier localization layer 106a is m, the electron mobility of the second carrier localization layer 106b is n, and the electron mobility of the third carrier localization layer 106c is p, where: 5 (cm 2 / v / s) < n < p < m < 8000 (cm 2 / v / s).

[0066] In some optional embodiments, the carrier localization layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0067] In some optional embodiments, the lower confinement layer 101 is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50 nm to 5000 nm and an Si doping concentration of 1E18 cm -3 to 1E20 cm -3 .

[0068] In some optional embodiments, the upper confinement layer 105 is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and an Mg doping concentration of 1E18 cm -3 to 1E20 cm -3 .

[0069] In some optional embodiments, the lower waveguide layer 102 and the upper waveguide layer 104 are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50 nm to 1000 nm and an Si doping concentration of 1E16 cm -3 to 5E19 cm -3 .

[0070] In some optional embodiments, the substrate 100 includes any one of sapphire, silicon, CuW, Mo, TiW, Cu, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0071] The following table shows the parameter comparison between traditional semiconductor laser elements and the semiconductor laser elements with carrier localization layers proposed in this embodiment, including the confinement factor, temperature quenching ratio, and laser breakage ratio, presenting the differences between traditional semiconductor laser elements and the semiconductor laser elements with carrier localization layers proposed in this embodiment:

[0072]

[0073]

[0074] It can be seen that the semiconductor laser elements with carrier localization layers proposed in this embodiment have improved the confinement factor, reduced the temperature quenching ratio and the laser breakage ratio compared with traditional semiconductor laser elements, and have obvious advantages compared with traditional semiconductor laser elements.

[0075] Obviously, those skilled in the art can make various modifications and variations to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalent technologies, this application is also intended to include these modifications and variations.

Claims

1. A semiconductor laser element having a carrier localization layer, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: The lower confinement layer includes a first lower confinement layer, a second lower confinement layer and a third lower confinement layer which are sequentially arranged from bottom to top, the semiconductor laser element having a carrier localization layer also includes a carrier localization layer, the carrier localization layer includes a first carrier localization layer, a second carrier localization layer and a third carrier localization layer, the first carrier localization layer is arranged between the first lower limit layer and the second lower confinement layer, the second carrier localization layer is arranged between the second lower confinement layer and the third lower confinement layer, the third carrier localization layer is arranged between the third lower confinement layer and the lower waveguide layer, and the first carrier localization layer, the second carrier localization layer and the third carrier localization layer all have Philips ionization degree distribution characteristics and saturated electron drift velocity distribution characteristics; The Philips ionization degree of the first carrier localization layer has a function y1=A+B*(e x1 +e -x1 ) / (e x1 -e -x1 ) The third quadrant curve distribution; the Philips ionization degree of the second carrier localization layer has the function y2 = C + D * lnx2 / e x2 Curve distribution; the Philips ionization degree of the third carrier localization layer has a first quadrant curve distribution of the function y3=E+F*x3 / lnx3; The saturated electron drift velocity of the first carrier localization layer has the function y4=G+H*e x1 / x1 third quadrant curve distribution; the saturated electron drift rate of the second carrier localization layer has a function y5 = I + J * lnx2 / x2 curve distribution; the saturated electron drift rate of the third carrier localization layer has a function y6 = K + L * sinx3 / x3 2 The first quadrant curve distribution; Wherein, x1 is the depth of the first carrier localization layer toward the second lower confinement layer, x2 is the depth of the second carrier localization layer toward the third lower confinement layer, and x3 is the depth of the third carrier localization layer toward the lower waveguide layer.

2. The semiconductor laser device having a carrier localization layer according to claim 1, characterized in that: The Philips ionization degree of the first carrier localization layer is d, the Philips ionization degree of the second carrier localization layer is e, and the Philips ionization degree of the third carrier localization layer is f, wherein: 0.1<e<f<d<10.

3. The semiconductor laser device having a carrier localization layer according to claim 1, wherein: The saturated electron drift velocity of the first carrier localization layer is g, the saturated electron drift velocity of the second carrier localization layer is h, and the saturated electron drift velocity of the third carrier localization layer is i, wherein: 5E6 (cm / s)<h<i<g<5E8 (cm / s).

4. The semiconductor laser device having a carrier localization layer according to claim 1, wherein: The first carrier localization layer, the second carrier localization layer and the third carrier localization layer also have electron affinity distribution characteristics and electron mobility distribution characteristics; The electron affinity of the first carrier localization layer has the function y7=M+N*sinx1 / x1 2 The third quadrant curve distribution; the electron affinity of the second carrier localization layer has the function y8 = O + P * x2 / e x2 Curve distribution; the electron affinity of the third carrier localization layer has a first quadrant curve distribution of function y9=Q+R*lnx3+1 / x3-1; The electron mobility of the first carrier localization layer has a function y 10 =S+T*e x1 / lnx1 curve distribution; the electron mobility of the second carrier localization layer has a function y 11 =U+V*lnx1 / e x1 Curve distribution; the electron mobility of the third carrier localization layer has a function y 12 =W+Z*(e x3 +e -x3 ) / (e x3 -e -x3 )The first quadrant curve distribution.

5. The semiconductor laser device having a carrier localization layer according to claim 4, characterized in that: The electron affinity of the first carrier localization layer is j, the electron affinity of the second carrier localization layer is k, and the electron affinity of the third carrier localization layer is l, wherein: 0.5 (eV) < k < l < j < 20 (eV).

6. The semiconductor laser device having a carrier localization layer according to claim 4, characterized in that: The electron mobility of the first carrier localization layer is m, the electron mobility of the second carrier localization layer is n, and the electron mobility of the third carrier localization layer is p, wherein: 5 (cm 2 / v / s)<n<p<m<8000(cm 2 / v / s).

7. The semiconductor laser device having a carrier localization layer according to claim 1, characterized in that: The carrier localization layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

8. The semiconductor laser device having a carrier localization layer according to claim 1, wherein: The lower limiting layer is any one or any combination of GaN, AlGaN, InGaN, AlInGaN, AlN, InN, and AlInN, with a thickness of 50nm to 5000nm and a Si doping concentration of 1E18cm -3 To 1E20cm -3 ; The upper confinement layer is any one or any combination of GaN, AlGaN, AlInGaN, AlN, and AlInN, with a thickness of 20 nm to 1000 nm and a Mg doping concentration of 1E18 cm -3 To 1E20cm -3 .

9. The semiconductor laser device having a carrier localization layer according to claim 1, wherein: The lower waveguide layer and the upper waveguide layer are any one or any combination of GaN, InGaN, and AlInGaN, with a thickness of 50nm to 1000nm and a Si doping concentration of 1E16cm -3 to 5E19 cm -3 .

10. The semiconductor laser device having a carrier localization layer according to claim 1, wherein: The substrate includes sapphire, silicon, CuW, Mo, TiW, Cu, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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