Reconfigurable color camouflage device based on germanium-selenium material

Abstract

The invention discloses a reconfigurable color camouflage device based on a germanium-selenium material. The reconfigurable color camouflage device sequentially comprises a substrate, a reflecting layer, a dielectric layer, a functional layer and a protective layer from bottom to top, the functional layer is made of a germanium-selenium material, the chemical formula is GexSe100-x, x is larger than or equal to 40 and smaller than or equal to 75, y is larger than or equal to 1 and smaller than or equal to 2, and the thickness range is larger than or equal to 10 nm and smaller than or equal to 400 nm; reconfigurable color camouflage under visible light is realized through switching of an amorphous phase and a crystal phase of the germanium-selenium material. The germanium selenium has excellent thermal stability, an amorphous phase and a crystal phase of the germanium selenium have obvious optical property difference, and the two phases can keep the structure and performance stable for a long time. By designing a simple multi-layer film structure device, the material and thickness of each layer and the phase structure switching of the germanium-selenium material are controlled, and the rapid and reversible switching of the device in a specific color gamut can be realized.

Description

Technical Field

[0001] The present invention relates to the technical field of color display devices, and particularly to a reconfigurable color camouflage device based on germanium selenide materials. Background Art

[0002] Currently, the importance of visible light camouflage technology has become increasingly prominent. By adopting colors, patterns, and textures similar to the environment, the visibility of the target can be effectively reduced, making it difficult to be detected in complex environments. Traditional camouflage means, such as camouflage paints and camouflage nets, have the advantages of simple preparation and wide application. However, their colors and patterns are fixed, and they can only provide certain protection in a single scenario. It is difficult to achieve color change in cross-scenarios, resulting in the failure of camouflage.

[0003] In recent years, novel reflective display devices based on phase change materials have brought new prospects for visible light camouflage. There are significant differences in optical properties between the amorphous phase and the crystalline phase of phase change materials, and the phase structure can be rapidly and reversibly switched under external excitation. Therefore, color change between different colors can be achieved through phase structure transformation, and thus reconfigurable color camouflage in cross-scenarios can be realized. However, the crystallization temperature of traditional phase change material germanium antimony telluride is only ~150 °C, and its amorphous phase may crystallize at a temperature close to 120 °C in a long-term high-temperature environment. Crystallization will occur in some extreme temperature environments (such as the area near the engine and extreme working condition temperatures), resulting in color change and thus the failure of camouflage.

[0004] Therefore, there is an urgent need to develop a display material and a reconfigurable color camouflage device with significant optical property differences between the amorphous and crystalline phases and high thermal stability of its amorphous phase. Summary of the Invention

[0005] In order to overcome the defects of the above prior art, the present invention provides a reconfigurable color camouflage device based on germanium selenide materials. Germanium selenide has excellent thermal stability, with significant differences in optical properties between its amorphous phase and crystalline phase, and both phases can maintain long-term stability of structure and performance. By designing a simple multi-layer film structure device and controlling the materials, thicknesses of each layer, and the phase structure switching of germanium selenide materials, rapid and reversible switching of the device within a specific color gamut can be achieved.

[0006] In order to achieve the above object, the technical solution adopted by the present invention is:

[0007] A reconfigurable color camouflage device based on germanium selenide materials, which successively includes a substrate, a reflective layer, a dielectric layer, a functional layer, and a protective layer from bottom to top; the functional layer is made of germanium selenide material, and its chemical formula is Ge x Se 100-x, where 40 ≤ x ≤ 75, and the thickness ranges from 10 nm to 400 nm; by switching between the amorphous phase and the crystalline phase of the germanium selenide material, it is used to achieve reconfigurable color camouflage under visible light.

[0008] The reflective layer is used to provide specular reflection; the dielectric layer is used to regulate the reflectivity of the device; the functional layer is used to regulate the reflectivity of the device; the protective layer is located above the functional layer to prevent oxidation or surface damage.

[0009] The crystallization temperature of the germanium selenide material in the functional layer can reach ≥ 350 °C, and it can maintain stable performance under harsh working conditions.

[0010] Color switching and reconstruction are achieved through reversible switching of the phase structure of the functional layer, such as reversible switching between blue and green, yellow and blue, green and yellow, etc., so as to achieve reconfigurable color change display of desert camouflage, jungle camouflage, and ocean camouflage, etc., and achieve the effect of cross-scene color camouflage; the reversible switching of the phase structure can be realized by external excitation, and the external excitation includes but is not limited to laser pulses, electrical pulses, or heating.

[0011] The display color is regulated by adjusting the thickness of the dielectric layer and the functional layer, as well as the composition of the functional layer. The regulation range of multi-parameter coupling includes the RGB color gamut range;

[0012] When the thickness of the functional layer is 10 nm ≤ thickness ≤ 20 nm, the color coordinates of the device are located in the red color gamut; when the thickness of the functional layer is 20 nm < thickness ≤ 40 nm, the color coordinates of the device are located in the blue color gamut; when the thickness of the functional layer is 40 nm < thickness ≤ 60 nm, the color coordinates of the device are located in the green color gamut;

[0013] When the thickness of the functional layer exceeds 60 nm, the color coordinates return to the red color gamut, and as the thickness increases, the color coordinates of the device cycle through these three regions, but the corresponding color saturation gradually increases.

[0014] The reflective layer is a thin film with a reflectivity > 90% to reduce the loss during light transmission and meet the requirements of specular reflection, including but not limited to Pt, Au, etc.; the dielectric layer is ITO; the protective layer is any one of ITO and SiO2.

[0015] The thickness of the reflective layer is ≥ 50 nm; the thickness of the dielectric layer is 10 nm ≤ thickness ≤ 400 nm; the thickness of the functional layer is 10 nm ≤ thickness ≤ 300 nm; the thickness of the protective layer is 5 nm ≤ thickness ≤ 200 nm.

[0016] The reflective layer, dielectric layer, functional layer, and protective layer are prepared by one-time stacking, and the preparation methods include but are not limited to magnetron sputtering, chemical vapor deposition, atomic deposition, or electron beam evaporation.

[0017] Advantages of the present invention:

[0018] For the reconfigurable color camouflage device based on germanium selenide material proposed by the present invention, the crystal and amorphous phases of the functional layer germanium selenide material can undergo rapid and reversible phase structure switching, and there are significant optical property differences in the visible light band. Therefore, the device can achieve color change and reconstruction; the crystallization temperature of the germanium selenide material is ≥350 °C, and it has excellent thermal stability, and can maintain stable performance under harsh working condition temperatures without camouflage failure.

[0019] The reconfigurable color camouflage device based on germanium selenide material proposed by the present invention can adjust the display color through multiple parameters such as the thickness of the dielectric layer, the thickness of the functional layer, and the composition of the functional layer. The adjustment range includes the RGB color gamut range. Therefore, various colors can be displayed through multi-parameter coupling regulation.

[0020] The reconfigurable color camouflage device based on germanium selenide material proposed by the present invention can achieve cross-color gamut color switching and reconstruction through the reversible phase structure switching of the functional layer, such as blue and green, yellow and blue, green and yellow, etc., so as to achieve cross-scene reconfigurable display of desert camouflage, jungle camouflage, and ocean camouflage, etc.

[0021] The preparation process of the reconfigurable color camouflage device based on germanium selenide material proposed by the present invention can be prepared by one-time stacking. The bonding force between multiple layers of films is strong, and the adhesion to the substrate is good, effectively suppressing the peeling phenomenon and ensuring the durability of the device in a complex environment. Description of the drawings

[0022] Figure 1 It is a schematic structural diagram of a reconfigurable color camouflage device based on germanium selenide material.

[0023] Figure 2 It is the extinction coefficient of the amorphous and crystal phases of germanium selenide material.

[0024] Figure 3 It is the refractive index of the amorphous and crystal phases of germanium selenide material.

[0025] Figure 4 It is a comparison diagram of chromaticity coordinates when the thickness and phase structure of the functional layer of the reconfigurable color camouflage device are different. Detailed implementation manners

[0026] The present invention will be further described in detail below with reference to the drawings.

[0027] Figure 1Schematic diagram of the structure of a reconfigurable color camouflage device based on germanium selenide material. From bottom to top, there are a substrate 101, a reflective layer 102, a dielectric layer 103, a functional layer 104, and a protective layer 105 in sequence; the thickness of the reflective layer 102 is ≥50 nm, which is used to provide specular reflection; the dielectric layer 103 is 10 - 400 nm, which is used to regulate the reflectivity of the device; the thickness of the functional layer 104 is 10 - 300 nm, which is used to regulate the reflectivity of the device; the thickness of the protective layer 105 is 5 - 200 nm, which is used to prevent oxidation or surface damage.

[0028] Figure 2 Are the extinction coefficients of the amorphous and crystalline phases of germanium selenide material. In the visible light band, there are significant differences in the extinction coefficients of the amorphous and crystalline phases of germanium selenide material.

[0029] Figure 3 Are the refractive indices of the amorphous and crystalline phases of germanium selenide material. In the visible light band, there are significant differences in the refractive indices of the amorphous and crystalline phases of germanium selenide material.

[0030] Figure 4 Is a comparison chart of chromaticity coordinates when the thickness and phase structure of the functional layer of the reconfigurable color camouflage device are different. In the visible light band, the displayed color of the device changes with the change of the thickness of germanium selenide material, and the switching between the amorphous and crystalline phases causes changes in chromaticity coordinates.

[0031] The following further illustrates the present invention with specific embodiments as examples.

[0032] This embodiment is a reconfigurable color camouflage device based on germanium selenide material, and the specific process is as follows:

[0033] Embodiment 1

[0034] Two reconfigurable color camouflage devices based on germanium selenide material were prepared using a magnetron sputtering device. The reflective layer 102 selected Pt material with a thickness of 100 nm, the dielectric layer 103 selected ITO with a thickness of 150 nm, and the protective layer 105 selected ITO with a thickness of 20 nm. The difference lies in that the functional layer 104 selected GeSe material, but the thicknesses are 60 nm and 200 nm respectively.

[0035] When the thickness of the functional layer of the reconfigurable color camouflage device is 60 nm, its chromaticity coordinates are located in the blue region, which is suitable for ocean camouflage; when the thickness of the functional layer is 200 nm, its chromaticity coordinates are located in the green region, which is suitable for jungle camouflage.

[0036] Embodiment 2

[0037] A reconfigurable color camouflage device made of germanium selenide material was prepared using a magnetron sputtering device. The reflective layer 102 was made of Pt material with a thickness of 100 nm, the dielectric layer 103 was made of ITO with a thickness of 150 nm, the functional layer 104 was made of GeSe material with a thickness of 200 nm, and the protective layer 105 was made of ITO with a thickness of 20 nm.

[0038] When the functional layer material of the reconfigurable color camouflage device is in the amorphous phase, its chromaticity coordinates are located in the blue region, suitable for ocean camouflage; by annealing at 400 °C, the functional layer material of the device crystallizes, and at this time its chromaticity coordinates change to be located in the yellow region, suitable for desert camouflage.

Claims

1. A reconfigurable color camouflage device based on germanium selenide material, characterized in that, From bottom to top are a substrate (101), a reflective layer (102), a dielectric layer (103), a functional layer (104), and a protective layer (105) in sequence; the functional layer (104) is a germanium selenide material with the chemical formula Ge x Se 100-x , where 40 ≤ x ≤ 75 and the thickness range is 10 nm ≤ thickness ≤ 400 nm; by switching between the amorphous phase and the crystalline phase of the germanium selenide material, it is used to achieve reconfigurable color camouflage under visible light.

2. The reconfigurable color camouflage device based on germanium selenide material according to claim 1, wherein The reflective layer (102) is used to provide specular reflection; the dielectric layer (103) is used to regulate the reflectivity of the device; the functional layer (104) is used to regulate the reflectivity of the device; the protective layer (105) is located above the functional layer (104) to prevent oxidation or surface damage.

3. The reconfigurable color camouflage device based on germanium selenide material according to claim 1, wherein The crystallization temperature of the germanium selenide material in the functional layer (104) can reach ≥350 °C, enabling it to maintain stable performance under severe working condition temperatures.

4. The reconfigurable color camouflage device based on germanium selenide material according to claim 1, characterized in that, Color switching and reconstruction are achieved through the reversible switching of the phase structure of the functional layer (104). The reversible switching of the phase structure can be driven by an external excitation, including but not limited to laser pulses, electrical pulses, or heating.

5. The reconfigurable color camouflage device based on germanium selenide material according to claim 1, wherein The display color is regulated by adjusting the thicknesses of the dielectric layer (103) and the functional layer (104), as well as the composition of the functional layer (104). The regulation range of the multi-parameter coupling includes the RGB color gamut range. When the thickness of the functional layer (104) is 10 nm ≤ thickness ≤ 20 nm, the color coordinates of the device are located in the red color gamut; when the thickness of the functional layer (104) is 20 nm < thickness ≤ 40 nm, the color coordinates of the device are located in the blue color gamut; when the thickness of the functional layer (104) is 40 nm < thickness ≤ 60 nm, the color coordinates of the device are located in the green color gamut. When the thickness of the functional layer (104) exceeds 60 nm, the color coordinates return to the red color gamut, and as the thickness increases, the color coordinates of the device cycle through these three regions, but the saturation of the corresponding color coordinates gradually increases.

6. The reconfigurable color camouflage device based on germanium selenide material according to claim 1, wherein The reflective layer (102) is a thin film with a reflectivity > 90% to reduce losses during light transmission and meet the requirements of specular reflection, including but not limited to Pt, Au; the dielectric layer (103) is ITO; the protective layer (105) is any one of ITO and SiO2.

7. The reconfigurable color camouflage device based on germanium selenide material according to claim 1, wherein The thickness of the reflective layer (102) is ≥50 nm; the thickness of the dielectric layer (103) is 10 nm ≤ thickness ≤ 400 nm; the thickness of the functional layer (104) is 10 nm ≤ thickness ≤ 300 nm; the thickness of the protective layer (105) is 5 nm ≤ thickness ≤ 200 nm.

8. The reconfigurable color camouflage device based on germanium selenide material according to claim 1, characterized in that, The reflective layer (102), dielectric layer (103), functional layer (104), and protective layer (105) are prepared by one-time stacking.

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