Polyurethane polishing pad and preparation method thereof

By using mesoporous silica-grafted graphene oxide filler in the polishing pad, the problem of single dispersion and functionality of the filler is solved, better thermal conduction and mechanical properties are achieved, and the polishing quality and service life are improved.

CN120326519AActive Publication Date: 2025-07-18LIANGSHI ZHENGSHENG (JIANGSU) SEMICONDUCTOR TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202510761808.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-06-09
Publication Date
2025-07-18
Estimated Expiration
2045-06-09

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Abstract

The invention belongs to the technical field of chemical mechanical polishing of semiconductors, and provides a polyurethane polishing pad and a preparation method thereof. The polyurethane polishing pad at least comprises a polishing layer and a buffer layer, the polishing layer is prepared from, by weight, 60-100 parts of polyurethane prepolymer, 1-10 parts of filler and 10-30 parts of curing agent, and the filler is mesoporous silica grafted graphene oxide filler. Mesoporous silica grafted graphene oxide is used as a filler, and mesoporous silica is grafted to the surface of graphene oxide, so that the dispersity of graphene oxide in a polyurethane prepolymer system is greatly improved, and the effect of graphene oxide is better played. The filler can utilize the heat conduction performance of the graphene oxide, and the added mesoporous silica has a hollow structure, so that the heat conduction performance of the polishing pad can be improved.
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Citation Information

Patent Citations

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  • Thermoplastic polyurethane elastomer composite material with high dielectric constant and low dielectric loss and preparation method thereof

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