Magnet device and magnetron sputter cathode

Abstract

The application provides a magnet device and a magnetron sputtering cathode, and relates to the technical field of magnetron sputtering. At least one first magnet is added to the surface of a part of the curved area of an inner magnet and / or an outer magnet, or at least one second magnet with a greater residual magnetic field strength is replaced, or at least one third magnet is added between the curved area of the inner magnet and the curved area of the outer magnet, so that the horizontal magnetic field distribution of the curved area is alternatingly strong and weak, the magnetic field distribution of the curved area is effectively improved, the diagonal effect is weakened or eliminated, the utilization rate of the target material is significantly improved, the production cost is reduced, the implementation mode is more flexible, and the cost is lower.

Description

Technical Field

[0001] The present application relates to the technical field of magnetron sputtering, and in particular to a magnet device and a magnetron sputtering cathode. Background Art

[0002] The magnetron sputtering cathode has a magnet device inside. The design of the magnet device determines the magnetic field distribution, which is an important factor affecting the target material utilization rate. Improving the target material utilization rate can effectively reduce production costs. The magnet device generally includes an inner magnet and an outer magnet. The polarity of the inner magnet and the outer magnet are opposite. For example, the S-level of the inner magnet faces upwards, and the N-level of the outer magnet faces upwards. The inner magnet and the outer magnet are generally divided into a straight area in the middle and a curved area at the end, such as Figure 1 As shown. Generally speaking, the greater the horizontal component of the magnetic field intensity, the greater the electron concentration, and the greater the degree of etching or sputtering of the target. The magnet device forms a closed magnetic field corridor above the target material, and the electrons move along the magnetic field corridor. The closed magnetic field corridor causes the etched part of the target material to form a closed runway shape (including curved areas and straight areas). The most severely etched part of the target material usually occurs in the end area of ​​the target material (that is, the curved areas at both ends of the electron closed runway). When the electrons leave the curved area and move toward the straight area, due to the uneven distribution of the magnetic field on the target surface and the change in magnetic field intensity, the end area of ​​the target material is etched most severely and forms a diagonal distribution (called the diagonal effect). The target material fails after the end of the target material is etched prematurely, thereby reducing the target material utilization rate, such as Figure 2 As shown, Figure 2 The shadowed areas in the upper left and lower right corners are the most severely etched areas. The actual image of the target material etching is shown in the figure below. Figure 3 It can be seen that reducing or eliminating the diagonal effect is the key to improving target utilization.

[0003] According to experimental measurements and simulation calculations, the horizontal component of the magnetic field intensity in the end regions is generally weaker than that in the straight-line regions. However, the target material in these end regions is etched more severely and exhibits a diagonal effect. This cannot be explained by the general conclusion that a greater horizontal component of the magnetic field intensity leads to a greater electron concentration and a greater degree of target etching. The existing solution is to increase the horizontal magnetic field intensity in the end regions (i.e., to improve the uniformity of the magnetic field in the end regions and the straight-line regions), thereby reducing the difference in the horizontal component of the magnetic field intensity between the end regions and the straight-line regions, thereby reducing the diagonal effect. However, since the horizontal magnetic field intensity must be increased throughout the entire end region, the existing technology involves installing magnets of the same size at the ends of the inner and / or outer magnets. However, the magnet size is limited by the space of the magnet assembly, or the magnets at the entire end of the inner and / or outer magnets are replaced with magnets with stronger residual magnetization. This improvement measure is costly and inflexible, and may not fully achieve the desired effect of reducing or eliminating the diagonal effect. Therefore, the cathode structure of magnetron sputtering still needs further improvement.

[0004] At present, there is no effective technical solution to the above problems. SUMMARY

[0005] The magnet device and the magnetron sputtering cathode can significantly improve the utilization rate of the target material, reduce the production cost, and have more flexible implementation and lower cost.

[0006] The magnet device comprises an inner magnet and an outer magnet, the inner magnet is arranged on the inner side of the outer magnet, the inner magnet and the outer magnet each have a straight path region in the middle and two curved path regions at the ends, the two ends of the straight path region are respectively connected to one of the curved path regions, the polarities of the upward sides of the inner magnet and the outer magnet are opposite, and part of the curved path region of the inner magnet and / or the outer magnet has at least one first magnet on the surface or is replaced by at least one second magnet with a greater residual magnetic field strength, or at least one third magnet is arranged between the curved path region of the inner magnet and the curved path region of the outer magnet, so that the horizontal magnetic field distribution of the curved path region is strong and weak alternately.

[0007] Through the above scheme, the horizontal magnetic field distribution of the curved path region is strong and weak alternately, the magnetic field distribution of the curved path region is effectively improved, the corner effect is weakened or eliminated, and the utilization rate of the target material is improved.

[0008] Optionally, a first magnet with the same polarity as the inner magnet is arranged on the outer side of the curved path region of the inner magnet, and / or a first magnet with the same polarity as the outer magnet is arranged on the inner side or the outer side of the curved path region of the outer magnet.

[0009] Through the above technical scheme, the local magnetic field enhancement changes the overall magnetic field distribution of the curved path region, so that the horizontal magnetic field strength of the curved path region forms a distribution mode of strong and weak alternation. This strong and weak alternation of the magnetic field distribution can affect the movement trajectory and speed of the electrons in the curved path region, and in particular can reduce the tendency of the electrons to accelerate in the curved path region. By reducing the increased movement speed of the electrons, the excessive etching of the target material end region caused by the electrons when leaving the curved path region can be effectively weakened or eliminated, that is, the corner effect can be weakened or eliminated.

[0010] Optionally, two or more first magnets with the same polarity as the inner magnet are arranged on the outer side of the curved path region of the inner magnet, and each first magnet is arranged along the bending direction of the curved path region, and / or two or more first magnets with the same polarity as the outer magnet are arranged on the inner side or the outer side of the curved path region of the outer magnet, and each first magnet is arranged along the bending direction of the curved path region.

[0011] By the technical scheme, multiple horizontal magnetic fields with strong and weak distribution along the bending direction are formed. The strong and weak distribution of the magnetic fields can affect the movement trajectory and speed of the electrons in the bending area, so that the increased movement speed of the electrons is reduced, thereby effectively weakening or eliminating the corner effect and reducing the etching degree of the end area of the target material.

[0012] Optionally, a third magnet is added between the bending area of the inner magnet and the bending area of the outer magnet. When the N pole of the inner magnet faces upward and the S pole of the outer magnet faces upward, the N pole of the third magnet faces the inner magnet and the S pole of the third magnet faces the outer magnet. When the N pole of the inner magnet faces downward and the S pole of the outer magnet faces downward, the N pole of the third magnet faces the outer magnet and the S pole of the third magnet faces the inner magnet.

[0013] Optionally, two or more third magnets are added between the bending area of the inner magnet and the bending area of the outer magnet. When the N pole of the inner magnet faces upward and the S pole of the outer magnet faces upward, the N pole of the third magnet faces the inner magnet and the S pole of the third magnet faces the outer magnet. When the N pole of the inner magnet faces downward and the S pole of the outer magnet faces downward, the N pole of the third magnet faces the outer magnet and the S pole of the third magnet faces the inner magnet. Each of the third magnets is arranged along the bending direction of the bending area.

[0014] Optionally, part of the bending area of the inner magnet and / or the bending area of the outer magnet is replaced by a second magnet. The polarity of the second magnet is the same as the polarity of the corresponding inner magnet or outer magnet.

[0015] Optionally, multiple regions of the bending area of the inner magnet and / or the bending area of the outer magnet are replaced by multiple second magnets. The polarity of the second magnet is the same as the polarity of the corresponding inner magnet or outer magnet. Each of the second magnets is arranged along the bending direction of the bending area.

[0016] Optionally, the second magnet and the corresponding inner magnet or outer magnet are integrally formed.

[0017] Optionally, the multiple second magnets and the corresponding inner magnet or outer magnet are integrally formed.

[0018] In a second aspect, the application provides a magnetron sputtering cathode, which comprises the magnet device of any one of the preceding aspects.

[0019] From the above, the magnet device and the magnetron sputtering cathode provided by the application effectively improve the magnetic field distribution of the curved area, weaken or eliminate the diagonal effect, significantly improve the utilization rate of the target material, reduce the production cost, and have more flexible implementation and lower cost.

[0020] Other features and advantages of the application will be set forth in the following description, and in part will become apparent from the description, or can be learned by practice of the application. The objects and other advantages of the application will be realized and attained by means of the instrumentalities particularly pointed out in the written description and claims hereof. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 The structure schematic diagram of the magnet device of the prior art.

[0022] Figure 2 The magnetic field effect schematic diagram of the magnet device of the prior art.

[0023] Figure 3 The effect schematic diagram of the target material etched by the magnet device of the prior art.

[0024] Figure 4 The first structure schematic diagram of the magnet device provided by the embodiment of the application.

[0025] Figure 5 The horizontal magnetic field intensity effect schematic diagram of the first structure of the magnet device provided by the embodiment of the application.

[0026] Figure 6 The second structure schematic diagram of the magnet device provided by the embodiment of the application.

[0027] Figure 7 The third structure schematic diagram of the magnet device provided by the embodiment of the application.

[0028] Figure 8 The fourth structure schematic diagram of the magnet device provided by the embodiment of the application.

[0029] Figure 9 The fifth structure schematic diagram of the magnet device provided by the embodiment of the application.

[0030] Figure 10 The horizontal magnetic field intensity effect schematic diagram of the fifth structure of the magnet device provided by the embodiment of the application.

[0031] Figure 11 A sixth structure diagram of a magnet device provided by an embodiment of the present application.

[0032] Figure 12 A seventh structure diagram of a magnet device provided by an embodiment of the present application.

[0033] Figure 13 A horizontal magnetic field strength effect diagram of the seventh structure of the magnet device provided by an embodiment of the present application.

[0034] Label description: 10, inner magnet; 20, outer magnet; 30, straight track area; 40, curved track area; 51, first magnet; 52, second magnet; 53, third magnet. DETAILED DESCRIPTION

[0035] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.

[0036] It should be noted that: similar labels and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings. Meanwhile, in the description of the present application, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0037] Please refer to Figures 4-12 The present application provides a magnet device and a magnetron sputtering cathode, which can significantly improve the utilization rate of the target material, reduce the production cost, and have more flexible embodiments and lower cost.

[0038] The application provides a magnet device, which comprises an inner magnet 10 and an outer magnet 20, the inner magnet 10 is arranged on the inner side of the outer magnet 20, the inner magnet 10 and the outer magnet 20 each have a middle straight track area 30 and two end curved track areas 40, the two ends of the straight track area 30 are respectively connected to one of the curved track areas 40, the polarity of the upper side of the inner magnet 10 and the outer magnet 20 is opposite, and at least one first magnet 51 is added to the surface of part of the curved track area 40 of the inner magnet 10 and / or the outer magnet 20 or the curved track area 40 of the inner magnet 10 and the curved track area 40 of the outer magnet 20 are replaced by at least one second magnet 52 with a larger residual magnetic field strength (the residual magnetic field strength refers to the magnetic induction strength that can be maintained in the inner magnet after the external magnetic field is removed) or at least one third magnet 53 is added between the curved track area 40 of the inner magnet 10 and the curved track area 40 of the outer magnet 20, so that the horizontal magnetic field distribution of the curved track area 40 is alternatingly strong and weak.

[0039] It is assumed that the application is applied to a magnetron sputtering thin film deposition process. The magnetron sputtering cathode is provided with a magnet device, which comprises an inner magnet 10 and an outer magnet 20, forming a closed magnetic field track. In the sputtering process, the electrons in the plasma are bound by the magnetic field and move along the magnetic field line track. In the curved track area 40 of the magnet device, the motion trajectory of the electrons is deflected. Due to the magnetic field distribution characteristics of the curved track area 40, especially the low horizontal magnetic field strength relative to the strength of the straight track area 30, the magnetic mirror effect is formed, resulting in the phenomenon of increased electron density and energy at the specific diagonal positions of the curved track area 40. This phenomenon makes the target material in these diagonal positions suffer more serious etching, forming a diagonal effect etching pattern (as shown in Figure 2 Even if the straight track area 30 and other parts of the curved track area 40 of the target material still have a large amount of residual material, the entire target material must be replaced due to the premature depletion of the material in the diagonal area, thereby resulting in low target material utilization.

[0040] In the face of the above problems, the application first analyzes the cause of the diagonal effect of the target material end area, finds that it is related to the magnetic field distribution of the curved track area 40, especially the low horizontal magnetic field strength relative to the strength of the straight track area 30, which forms the magnetic mirror effect, causing the electrons to accelerate in the curved track area 40 and causing local etching to intensify. The prior art solves the problem by increasing the horizontal magnetic field strength of the curved track area 40 as a whole, so that the horizontal magnetic field strength of the curved track area 40 and the horizontal magnetic field strength of the straight track area 30 are as uniform as possible, but this has cost and flexibility limitations. In this regard, the applicant believes that whether the magnetic field of the entire curved track area 40 can be changed or not, but the magnetic field distribution can be optimized through local adjustment to weaken or eliminate the diagonal effect and improve the target material utilization.

[0041] Specifically, the present application forms a closed magnetic field corridor above the target material through the combined action of the inner magnet 10 and the outer magnet 20, and the electrons move in the magnetic field corridor and bombard the target material to achieve sputtering. In the background art, since the horizontal magnetic field strength of the straight area 30 is greater than that of the end bend area 40, when the electrons enter the bend area 40 from the straight area 30, the magnetic field strength weakens. According to the principle of magnetic mirror effect, the parallel velocity of the electrons is converted into a vertical velocity. At the same time, the total energy is conserved and the movement speed of the electrons increases. When the electrons turn in the bend area 40 and are about to leave the bend area 40, due to their increased movement speed and movement inertia, the electrons gather at specific diagonal positions of the bend area 40, forming a diagonal effect, which causes the target materials at these positions to be severely etched and fail prematurely. The present application accurately changes the magnetic field distribution of the bend area 40 by adding or replacing magnets at local positions in the bend area 40, or adding magnets between the inner and outer magnet bend areas 40, so that its horizontal magnetic field strength presents a distribution pattern of alternating strong and weak. This alternating strong and weak magnetic field distribution decomposes the overall "large magnetic mirror" of the bend area 40 into multiple local "small magnetic mirrors" (such as Figure 5 As shown, the magnetic field is divided into two small magnetic mirrors, forming a strong-weak-strong-weak-strong-strong distribution. As electrons pass through these alternating strong and weak regions, their velocity variations are limited to a smaller range, preventing continuous acceleration throughout the entire curved region 40. This makes the electron trajectory and distribution more uniform, reducing excessive concentration at diagonal locations and effectively reducing or eliminating the diagonal effect.

[0042] In some preferred embodiments, a first magnet 51 may be added outside the curved region 40 of the inner magnet 10, with the polarity of the first magnet 51 being oriented in the same direction as the inner magnet 10. For example, if the north pole of the inner magnet 10 faces upward, the north pole of the added first magnet 51 also faces upward. Alternatively, a first magnet 51 may be added inside or outside the curved region 40 of the outer magnet 20, with the polarity of the first magnet 51 being oriented in the same direction as the outer magnet 20. For example, if the south pole of the outer magnet 20 faces upward, the south pole of the added first magnet 51 also faces upward. Alternatively, a third magnet 53 may be added between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20. When the north pole of the inner magnet 10 faces upward and the south pole of the outer magnet 20 faces upward, the north pole of the third magnet 53 faces the inner magnet 10 and the south pole faces the outer magnet 20. When the north pole of the inner magnet 10 faces downward and the south pole of the outer magnet 20 faces downward, the north pole of the third magnet 53 faces the outer magnet 20 and the south pole faces the inner magnet 10. These specific magnet addition or replacement methods can achieve local adjustment of the horizontal magnetic field strength in the curved area 40, forming a distribution of alternating strong and weak magnetic fields.

[0043] By the technical scheme, in the magnetron sputtering process, the horizontal magnetic field distribution of the curved path region 40 presents strong and weak alternately, effectively inhibits the excessive acceleration of the electrons in the curved path region 40 and the aggregation at the diagonal position, and weakens or eliminates the diagonal effect of the end region of the target material. This makes the etching of the target material in the curved path region 40 more uniform, avoiding the situation that the local region is etched prematurely, resulting in the overall failure of the target material. Therefore, the magnet device of the present application can significantly improve the utilization rate of the target material and reduce the production cost. At the same time, by increasing or replacing the magnets in the local curved path region 40, compared with the overall adjustment or replacement of the entire curved path region 40, the present scheme is more flexible and has lower cost.

[0044] Wherein, the inner magnet 10 refers to a magnetic component arranged inside the outer magnet 20, which can be realized by permanent magnet material or electromagnetic coil, and is mainly used for forming a magnetic field corridor together with the outer magnet 20; the outer magnet 20 refers to a magnetic component arranged outside the inner magnet 10, which can be realized by permanent magnet material or electromagnetic coil, and is mainly used for forming a magnetic field corridor together with the inner magnet 10; the opposite polarity of the inner magnet 10 and the outer magnet 20 on the upward side refers to that the magnetic pole of the inner magnet 10 on the side of the target material is different from the magnetic pole of the outer magnet 20 on the side of the target material, for example, the N pole of the inner magnet 10 upward and the S pole of the outer magnet 20 upward, or the S pole of the inner magnet 10 upward and the N pole of the outer magnet 20 upward, which is mainly used for forming a magnetic field corridor with a certain height above the target material; the outer side of the curved path region 40 of the inner magnet 10 refers to the region radially outward relative to the curved path region 40 of the inner magnet 10; and the inner side or the outer side of the curved path region 40 of the outer magnet 20 refers to the region radially inward or outward relative to the curved path region 40 of the outer magnet 20.

[0045] In some embodiments, a first magnet 51 with the same polarity direction as the inner magnet 10 is added on the outer side of the curved path region 40 of the inner magnet 10, and / or a first magnet 51 with the same polarity direction as the outer magnet 20 is added on the inner side or the outer side of the curved path region 40 of the outer magnet 20.

[0046] Specifically, the scheme of the present application adds a first magnet 51 with the same polarity direction as the inner magnet 10 on the outer side of the curved path region 40 of the inner magnet 10, and / or adds a first magnet 51 with the same polarity direction as the outer magnet 20 on the inner side or the outer side of the curved path region 40 of the outer magnet 20. Due to the magnetic field of these additional magnets being consistent with the direction of the magnetic field of the main magnet, the magnetic field generated by them and the magnetic field generated by the inner magnet 10 and / or the outer magnet 20 in the curved path region 40 are superimposed on each other, thereby enhancing the magnetic field strength of these specific regions. This local magnetic field enhancement changes the overall magnetic field distribution of the curved path region 40, so that the horizontal magnetic field strength of the curved path region 40 forms a strong and weak alternating distribution pattern, for example, as shown in Figure 4As shown, a first magnet 51 is added outside the curved region 40 of the inner magnet 10, and a first magnet 51 is added inside the curved region 40 of the outer magnet 20. The horizontal magnetic field intensity distribution of the curved region 40 is shown as Figure 5 The strong and weak magnetic field distribution can affect the trajectory and speed of the electrons in the curved region 40, and in particular can reduce the tendency of the electrons to accelerate in the curved region 40. By reducing the increased speed of the electrons, the excessive etching of the target end region caused by the electrons leaving the curved region 40 can be effectively reduced or eliminated, i.e. the corner effect can be reduced or eliminated. Therefore, the etching degree of the target end region is reduced, making the overall consumption of the target more uniform, thereby improving the utilization rate of the target. This way of adding auxiliary magnets at specific positions can more flexibly adjust the magnetic field distribution compared to simply replacing the entire region of magnets or adding magnets of the same size, and can have an advantage in terms of cost control.

[0047] In actual applications, if the upward side of the inner magnet 10 is S-pole and the upward side of the outer magnet 20 is N-pole. A first magnet 51 with an upward side of S-pole can be added outside the curved region 40 of the inner magnet 10. Meanwhile or separately, a first magnet 51 with an upward side of N-pole can be added inside or outside the curved region 40 of the outer magnet 20. These additional magnets can be arranged adjacent to the curved region 40 of the inner magnet 10 or the outer magnet 20.

[0048] By the above technical solutions, a strong and weak horizontal magnetic field distribution can be formed in the curved region 40 of the inner magnet 10 and / or the outer magnet 20, thereby reducing the increased speed of the electrons in the curved region 40, effectively reducing or eliminating the corner effect, reducing the etching degree of the target end region, and improving the utilization rate of the target.

[0049] In some embodiments, two or more first magnets 51 with the same polarity orientation as the inner magnet 10 are added outside the curved region 40 of the inner magnet 10, and each first magnet 51 is spaced apart along the bending direction of the curved region 40, and / or two or more first magnets 51 with the same polarity orientation as the outer magnet 20 are added inside or outside the curved region 40 of the outer magnet 20, and each first magnet 51 is spaced apart along the bending direction of the curved region 40.

[0050] Specifically, as Figure 6 and Figure 7As shown, a plurality of regions with relatively high magnetic field strength are formed outside the curved region 40 of the inner magnet 10 and / or outside the curved region 40 of the outer magnet 20, and these high magnetic field regions are arranged at intervals to form a plurality of horizontal magnetic fields with alternating high and low magnetic field strengths along the curved direction. This alternating high and low magnetic field distribution can affect the trajectory and speed of the electrons in the curved region 40, so that the increased speed of the electrons is reduced, thereby effectively reducing or eliminating the corner effect and reducing the etching degree of the end region of the target material. In this way, only the magnetic field distribution of the local region needs to be adjusted, a small number of magnets need to be added or changed, the alternating high and low magnetic field strengths of the curved region 40 are realized, and the corner effect is more effectively suppressed, and the utilization rate of the target material is improved.

[0051] In actual applications, two first magnets 51 with the same polarity direction as the inner magnet 10 can be arranged at intervals along the curved direction of the curved region 40 outside the curved region 40 of the inner magnet 10. For example, the two first magnets 51 can be arranged at about 2 / 5 and 4 / 5 positions of the arc outside the curved region 40 (as shown in FIG. 5), respectively, and they have the same polarity direction as the inner magnet 10. Figure 7 As another specific embodiment, two first magnets 51 with the same polarity direction as the outer magnet 20 can be arranged at intervals along the curved direction of the curved region 40 outside the curved region 40 of the outer magnet 20. For example, the two first magnets 51 can be arranged at about 2 / 5 and 4 / 5 positions of the arc outside the curved region 40 (as shown in FIG. 6), respectively, and they have the same polarity direction as the outer magnet 20. Figure 7 These added first magnets 51 can be made of similar materials and shapes as the original magnets, or different materials and shapes according to needs, as long as the required magnetic field distribution can be achieved; similarly, two or more first magnets 51 with the same polarity direction as the outer magnet 20 can be added inside the curved region 40 of the outer magnet 20, and each first magnet 51 is arranged at intervals along the curved direction of the curved region 40.

[0052] In some embodiments, a third magnet 53 is added between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20. When the N pole of the inner magnet 10 is upward and the S pole of the outer magnet 20 is upward, the N pole of the third magnet 53 is directed toward the inner magnet 10, and the S pole of the third magnet 53 is directed toward the outer magnet 20. When the N pole of the inner magnet 10 is downward and the S pole of the outer magnet 20 is downward, the N pole of the third magnet 53 is directed toward the outer magnet 20, and the S pole of the third magnet 53 is directed toward the inner magnet 10.

[0053] The third magnet 53 can be fixed on the support structure between the inner magnet 10 and the outer magnet 20 by means of adhesion, buckling or mechanical fixation, etc. The third magnet 53 can be arranged along the arc direction of the curved region 40, or arranged at a specific position of the curved region 40, for example, the center position of the curved region 40, as shown in Figure 8

[0054] Specifically, the scheme of the present application can weaken or eliminate the corner effect because the magnetic field distribution of the curved region 40 can be adjusted more accurately by adding the third magnet 53 between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20. Due to the interaction between the third magnet 53 and the inner magnet 10 and the outer magnet 20, the horizontal magnetic field distribution of the curved region 40 presents a state of strong and weak alternation, which can more effectively control the movement trajectory of the electrons, so that the electrons are more uniformly distributed on the target surface, thereby improving the utilization rate of the target. For example, in the case that the N-pole of the inner magnet 10 faces upward and the S-pole of the outer magnet 20 faces upward, the N-pole of the third magnet 53 faces the inner magnet 10 and the S-pole of the third magnet 53 faces the outer magnet 20, which means that the third magnet 53 forms a magnetic field bridge between the inner magnet 10 and the outer magnet 20, strengthens the magnetic field connection between the inner magnet 10 and the outer magnet 20, and makes the magnetic lines more concentrated in the curved region 40, thereby improving the magnetic field strength of the region. Thus, the magnetic field distribution of the curved region 40 presents a state of strong and weak alternation. Conversely, when the N-pole of the inner magnet 10 faces downward and the S-pole of the outer magnet 20 faces downward, the polarity direction of the third magnet 53 is adjusted accordingly to achieve the same effect. In this way, no matter how the polarity of the inner magnet 10 and the outer magnet 20 is, the magnetic field distribution of the curved region 40 can present a state of strong and weak alternation, thereby more effectively weakening the corner effect and improving the utilization rate of the target.

[0055] In some embodiments, two or more third magnets 53 are added between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20. In the case that the N-pole of the inner magnet 10 faces upward and the S-pole of the outer magnet 20 faces upward, the N-pole of the third magnet 53 faces the inner magnet 10 and the S-pole of the third magnet 53 faces the outer magnet 20. In the case that the N-pole of the inner magnet 10 faces downward and the S-pole of the outer magnet 20 faces downward, the N-pole of the third magnet 53 faces the outer magnet 20 and the S-pole of the third magnet 53 faces the inner magnet 10. The third magnets 53 are arranged along the curved direction of the curved region 40.

[0056] The two or more third magnets 53 refer to a plurality of independent third magnets 53 arranged between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20. These third magnets 53 are not arranged closely along the curved direction of the curved region 40, but have gaps, as shown in Figure 9 ​​

[0057] Specifically, by adding two or more third magnets 53 between the curved region 40 of the inner magnet 10 and the curved region 40 of the outer magnet 20, and spacing these third magnets 53 along the curved direction of the curved region 40, a strong-weak alternating horizontal magnetic field distribution is formed in the curved region 40. It is this strong-weak alternating magnetic field distribution that effectively reduces the increased speed of the electrons in the curved region 40 during movement. Specifically, when the N pole of the inner magnet 10 is upward and the S pole of the outer magnet 20 is upward, the N pole of the third magnet 53 is directed toward the inner magnet 10 and the S pole is directed toward the outer magnet 20. This polarity arrangement causes the magnetic field generated by the third magnet 53 to interact with the magnetic field of the inner and outer magnets 20 in the curved region 40, strengthening the local horizontal magnetic field near the third magnet 53 and weakening the horizontal magnetic field at the spaced positions. By adjusting the number and spacing of the third magnets 53, the magnetic field gradient and fluctuation pattern of the curved region 40 can be finely controlled, thereby more effectively guiding the electron trajectory and suppressing the acceleration of the electrons in the curved region 40, reducing the accumulation of electrons in a particular region, and further reducing or eliminating the diagonal effect of the target material. This multi-magnet spacing method provides higher flexibility and lower cost compared to simply adding or replacing large-size magnets, and can be optimized and adjusted according to different sputtering processes and target material characteristics.

[0058] In practical applications, for example, two third magnets 53 are added, which can be uniformly spaced along the curved direction of the curved region 40, for example, the arc length of the curved region 40 is approximately divided into five segments, and the two third magnets 53 are placed at approximately 2 / 5 and 4 / 5 positions, as shown in Figure 9 In this way, two local magnetic field enhancement points can be formed in the curved region 40, as shown in Figure 10 and a relatively weakened magnetic field point is formed between them, thereby achieving a strong-weak alternating horizontal magnetic field distribution and effectively controlling the movement of electrons in the curved region 40.

[0059] In some embodiments, part of the curved region 40 of the inner magnet 10 and / or the curved region 40 of the outer magnet 20 is replaced by a second magnet 52, and the polarity of the second magnet 52 is the same as the polarity of the corresponding inner magnet 10 or outer magnet 20.

[0060] The partial area in the curved area 40 of the inner magnet 10 and / or the curved area 40 of the outer magnet 20 refers to a specific range inside the curved part of the inner magnet 10 or the outer magnet 20, rather than the entire curved part, which can be determined according to the magnetic field simulation or experimental results to determine the local position where the magnetic field adjustment is needed; replacement refers to removing the original magnetic material or structure in the partial area and replacing it with a second magnet 52, which can be achieved by physical installation, embedding or one-piece forming, etc.

[0061] Specifically, the scheme of the present application replaces the partial area in the curved area 40 of the inner magnet 10 and / or the curved area 40 of the outer magnet 20 with a second magnet 52, and the polarity of the second magnet 52 is the same as the corresponding polarity of the inner magnet 10 or the outer magnet 20, thereby enhancing the magnetic field strength at the specific local position of the curved area 40, for example, replacing the middle partial area in the curved area 40 of the inner magnet 10 and the curved area 40 of the outer magnet 20 with a second magnet 52 (such as the shaded part in FIG. 6). Figure 11 Since the partial area is replaced instead of the entire curved area 40, and the second magnet 52 has a higher residual magnetic field strength, the horizontal magnetic field distribution of the curved area 40 is no longer uniform, but forms a magnetic field enhancement point in the replaced area, which has a difference in magnetic field strength from the surrounding non-replaced area, thereby realizing the strong-weak alternating magnetic field distribution of the curved area 40. This strong-weak alternating magnetic field distribution can more effectively guide the electron motion trajectory, avoid the excessive aggregation and acceleration of electrons at the specific position of the curved area 40, and thereby weaken the diagonal etching effect of the target material. Compared with replacing the magnet with a higher residual magnetic field strength as a whole (which is more expensive), the present scheme provides a more flexible and economical magnetic field adjustment means by selectively and locally enhancing the magnetic field, which can more accurately optimize the magnetic field distribution of the curved area 40, and thereby improve the utilization rate of the target material.

[0062] In some cases, an integrated forming process can be used. When manufacturing the inner magnet 10 or the outer magnet 20, a magnetic material with a higher residual magnetic field strength is directly used to fill or sinter at the specific part of the curved area 40 to form a local high-magnetic-strength area, i.e., the second magnet 52, thereby achieving the effect of replacement.

[0063] In some embodiments, multiple areas in the curved area 40 of the inner magnet 10 and / or the curved area 40 of the outer magnet 20 are replaced with multiple second magnets 52, the polarity of the second magnet 52 is the same as the corresponding polarity of the inner magnet 10 or the outer magnet 20, and each second magnet 52 is arranged along the curved direction of the curved area 40.

[0064] The plurality of regions refers to a plurality of positions or ranges divided along the bending direction in the bending region 40 of the outer magnet 20, which can be determined by equally or unequally dividing the bending region 40 along the bending direction.

[0065] Specifically, two regions can be selected along the bending direction of the bending region 40 of the outer magnet 20, and the original outer magnets 20 in the two regions are replaced by two second magnets 52 with greater residual magnetic field strength. The two second magnets 52 are arranged at intervals along the bending direction of the bending region 40, as shown in FIG. 4B, and the original outer magnets 20 are retained between the two regions. The polarity direction of the replaced second magnets 52 is the same as that of the original outer magnets 20. In this way, the horizontal magnetic field strength in the bending region 40 of the outer magnet 20 can be formed to present a strong-weak alternating distribution along the bending direction, as shown in FIG. 4C, which can effectively guide the movement of electrons and weaken the corner effect. Figure 12 Figure 13 Similarly, the bending region 40 of the inner magnet 10 can also be replaced in a similar manner, or the bending regions 40 of the inner magnet 10 and the outer magnet 20 can be replaced simultaneously.

[0066] In some embodiments, the second magnet 52 and the corresponding inner magnet 10 or outer magnet 20 are integrally formed.

[0067] Specifically, by integrally forming the second magnet 52 and the corresponding inner magnet 10 or outer magnet 20, the problems of insufficient bonding strength, loosening or even falling off caused by long-term stress or temperature changes in the traditional splicing or bonding methods can be avoided. The integrally formed structure forms a continuous and high-strength connection between the second magnet 52 and the inner magnet 10 or the outer magnet 20, greatly improving the overall mechanical strength and anti-vibration and anti-thermal stress capability of the magnet device, thereby ensuring that the strong-weak alternating horizontal magnetic field distribution in the bending region 40 after adjustment can exist stably and continuously. This stability is crucial for the magnetron sputtering process, as a stable magnetic field distribution can ensure that the trajectory and density of the electrons moving in the magnetic field corridor are not affected, avoiding magnetic field distortion caused by magnet loosening, thereby maintaining the uniformity of target material etching, weakening or eliminating the corner effect, and ultimately improving the utilization rate of the target material and the stability of the sputtering process.

[0068] The second magnet 52 and the inner magnet 10 or the outer magnet 20 can be integrally formed by sintering different components or magnetic materials together at high temperature, or by pressing the magnetic powder in a mold and then sintering, or by mixing the magnetic material with a binder and then injection molding or compression molding. The purpose is to form a close bond between the second magnet 52 and the inner magnet 10 or the outer magnet 20 at the molecular or crystal level, thereby enhancing the connection strength between the second magnet 52 and the inner magnet 10 or the outer magnet 20 and improving the overall stability and reliability of the structure. ​

[0069] In some embodiments, the plurality of second magnets 52 are integrally formed with the corresponding inner magnet 10 or outer magnet 20.

[0070] Specifically, by designing the plurality of second magnets 52 to be integrally formed with the corresponding inner magnet 10 or outer magnet 20, it is ensured that these second magnets 52 for adjusting the horizontal magnetic field distribution in the curved region 40 are firmly fixed. Such an integrated structure avoids problems such as insufficient connection strength and failure after long-term use that can be caused by traditional connection methods. By integrally forming, the plurality of second magnets 52 and the inner magnet 10 or outer magnet 20 form a close and inseparable whole, significantly improving the overall structural strength and stability of the magnet device in the curved region 40. This enables the technical solution of forming a strong-weak alternating magnetic field distribution in the curved region 40 by the plurality of second magnets 52 arranged at intervals to be stably and reliably implemented, without being plagued by connection stability problems. Therefore, the integrally formed structure provides structural support for achieving precise control and long-term stability of the magnetic field distribution in the curved region 40, thereby more effectively reducing the corner effect and improving the target material utilization rate.

[0071] In a second aspect, the present application provides a magnetron sputtering cathode comprising the magnet device of any one of the preceding.

[0072] The magnetron sputtering cathode refers to a core component for performing a magnetron sputtering process, which can include components such as a target material, a back plate, a cooling structure, and a magnet device, and its purpose is to confine the plasma by a magnetic field to achieve effective sputtering of the target material. The magnet device refers to a magnet combination arranged inside the magnetron sputtering cathode for generating a specific magnetic field distribution, which can include permanent magnets or electromagnets, and its purpose is to guide the motion trajectory of charged particles and affect the etching area and efficiency of the target material.

[0073] The improved magnet device of the present application is integrated into the magnetron sputtering cathode, which optimizes the internal magnetic field distribution of the cathode. This is because the improved magnet device achieves a strong-weak alternating horizontal magnetic field distribution in the curved region 40, which changes the magnetic field characteristics in this region. It is precisely due to this strong-weak alternating horizontal magnetic field that the electrons in the plasma can be more effectively confined and guided, making the motion trajectory and density distribution of the electrons on the surface of the target material form a closed racetrack, especially in the curved region 40 where excessive etching and corner effect are prone to occur in traditional technology. Such uniform plasma distribution and electron bombardment make the target material etching process consistent throughout the racetrack, significantly reducing local excessive consumption in the end region, effectively reducing or eliminating the corner effect, improving the overall utilization rate of the target material, and prolonging the service life of the target material, thereby reducing production costs and improving the overall performance of the magnetron sputtering cathode.

[0074] In this document, relational terms such as first and second and the like can be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.

[0075] The above description is merely illustrative of the application and not in limitation of the principles of the application. Numerous modifications and adaptations thereof will be readily apparent to those skilled in the art without departing from the spirit and scope of the application as defined in the following claims.

Claims

1. A magnet device, comprising an inner magnet (10) and an outer magnet (20), wherein the inner magnet (10) is arranged on the inner side of the outer magnet (20), and each of the inner magnet (10) and the outer magnet (20) has a straight region (30) in the middle and curved regions (40) at two ends, and the two ends of the straight region (30) are respectively connected to one of the curved regions (40), and the polarities of the inner magnet (10) and the outer magnet (20) facing upward are opposite, characterized in that: At least one first magnet (51) is added to the surface of a portion of the inner magnet (10) and / or the outer magnet (20) in the curved region (40) or replaced with at least one second magnet (52) having a larger residual magnetic field strength, or at least one third magnet (53) is added between the curved region (40) of the inner magnet (10) and the curved region (40) of the outer magnet (20), and the first magnet (51) or the second magnet (52) corresponding to the curved region (40) of the inner magnet (10) is located in the arc length direction of the curved region (40). The maximum lengths of the first magnet (51) and the second magnet (52) corresponding to the curved region (40) of the outer magnet (20) are both smaller than the arc length of the curved region (40) of the inner magnet (10); the maximum lengths of the first magnet (51) and the second magnet (52) corresponding to the curved region (40) of the outer magnet (20) in the direction of the arc length of the curved region (40) are both smaller than the arc length of the curved region (40) of the outer magnet (20); and the maximum length of the third magnet (53) in the direction of the arc length of the curved region (40) is smaller than the arc length of the curved region (40) of the outer magnet (20), so that the horizontal magnetic field distribution of the curved region (40) is alternating between strong and weak.

2. The magnet device according to claim 1, wherein A first magnet (51) having the same polarity orientation as the inner magnet (10) is added outside the curved region (40) of the inner magnet (10), and / or a first magnet (51) having the same polarity orientation as the outer magnet (20) is added inside or outside the curved region (40) of the outer magnet (20).

3. The magnet device according to claim 1, wherein Two or more first magnets (51) having the same polarity orientation as the inner magnet (10) are added outside the curved region (40) of the inner magnet (10), and the first magnets (51) are spaced apart along the curved direction of the curved region (40); and / or two or more first magnets (51) having the same polarity orientation as the outer magnet (20) are added inside or outside the curved region (40) of the outer magnet (20), and the first magnets (51) are spaced apart along the curved direction of the curved region (40).

4. The magnet device according to claim 1, wherein A third magnet (53) is added between the curved region (40) of the inner magnet (10) and the curved region (40) of the outer magnet (20); when the N pole of the inner magnet (10) faces upward and the S pole of the outer magnet (20) faces upward, the N pole of the third magnet (53) faces the inner magnet (10) and the S pole of the third magnet (53) faces the outer magnet (20); and when the N pole of the inner magnet (10) faces downward and the S pole of the outer magnet (20) faces downward, the N pole of the third magnet (53) faces the outer magnet (20) and the S pole of the third magnet (53) faces the inner magnet (10).

5. The magnet device according to claim 1, wherein Two or more third magnets (53) are added between the curved region (40) of the inner magnet (10) and the curved region (40) of the outer magnet (20); when the N pole of the inner magnet (10) faces upward and the S pole of the outer magnet (20) faces upward, the N pole of the third magnet (53) faces the inner magnet (10) and the S pole of the third magnet (53) faces the outer magnet (20); when the N pole of the inner magnet (10) faces downward and the S pole of the outer magnet (20) faces downward, the N pole of the third magnet (53) faces the outer magnet (20) and the S pole of the third magnet (53) faces the inner magnet (10); and each of the third magnets (53) is arranged at intervals along the curved direction of the curved region (40).

6. The magnet device according to claim 1, wherein The curved region (40) of the inner magnet (10) and / or a portion of the curved region (40) of the outer magnet (20) is replaced by a second magnet (52), wherein the polarity of the second magnet (52) is oriented in the same direction as the polarity of the corresponding inner magnet (10) or outer magnet (20).

7. The magnet device according to claim 1, wherein The plurality of regions in the curved region (40) of the inner magnet (10) and / or the curved region (40) of the outer magnet (20) are replaced by a plurality of second magnets (52), wherein the polarity of the second magnets (52) is in the same direction as the polarity of the corresponding inner magnet (10) or the outer magnet (20), and each of the second magnets (52) is arranged at intervals along the curvature direction of the curved region (40).

8. The magnet device according to claim 6, characterized in that The second magnet (52) and the corresponding inner magnet (10) or outer magnet (20) are an integrally formed structure.

9. The magnet device according to claim 7, characterized in that The plurality of second magnets (52) and the corresponding inner magnet (10) or outer magnet (20) are an integrally formed structure.

10. A magnetron sputtering cathode, characterized in that: The invention comprises the magnet device according to any one of claims 1 to 9.

Images