High-efficiency infrared reflecting layer on surface of large-aperture beryllium mirror and preparation method of high-efficiency infrared reflecting layer

Abstract

The invention discloses an efficient infrared reflecting layer on the surface of a large-aperture beryllium mirror and a preparation method. The infrared reflecting layer sequentially comprises a bonding layer, a transition layer, a high-reflection layer and a protective layer. According to the beryllium-based lens, one or more alloy films of Au / Ag / Al / Cu are selected as high-reflection layers, one or more alloy films of Ni / Ti / Cr with a lattice structure similar to that of Be are selected as bonding layers, and a transition layer with a gradient component structure is selected, so that the interface compatibility and binding force of the beryllium-based lens and the surface reflection layer are improved; according to the invention, the metal ceramic mixed protection layer made of the high-reflection layer material doped with SiO2 is additionally plated, so that the mechanical strength of the surface reflection layer is enhanced, and the high-efficiency reflection rate is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of optical materials, and particularly to a high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror and a preparation method thereof. Background Art

[0002] With the demand for further improvement of the technical indicators of space remote sensing systems, ultra-large and complex remote sensing satellite systems have become a very important development direction, and the lightweight requirement of space remote sensing payloads has become increasingly urgent. The unique properties of beryllium metal, such as light weight, high strength, and high stiffness, enable the integration of the reflector and its support structure, with good machinability, meeting the requirements of lightweight design, low power consumption, high control accuracy, high pointing accuracy, and high reliability, long life, and high stability for space applications. It is the best choice material for space reflectors recognized at home and abroad. The angular resolution of an optical system is inversely proportional to the clear aperture, and the light-gathering power is proportional to the square of the lens aperture. Under the condition permitted by technology, the larger the lens aperture, the more conducive it is to improving the resolution and imaging quality of the optical system. With the continuous increase of usage requirements, the lens aperture is also increasing continuously, and it is imperative to break through the key technologies for the preparation of large-aperture beryllium mirrors.

[0003] A beryllium mirror mainly consists of a beryllium-based lens and a surface reflection layer. The beryllium-based lens is made of beryllium metal and its alloys, and the surface reflection layer mainly includes a metal reflection layer represented by a nickel-phosphorus alloy layer and a special glass reflection layer represented by silicon dioxide. The surface reflection layer is an important guarantee for the performance of the beryllium mirror. The higher the infrared reflectivity of the reflection layer, the smaller the overall transmittance, and the higher the imaging quality. At present, the deposition technology of the surface reflection layer of small-sized beryllium mirrors has become increasingly mature, but the deposition technology of the surface reflection layer of large-aperture beryllium mirrors still needs further research and verification.

[0004] The reflectivity of a thin film is inversely proportional to the refractive index n and directly proportional to the extinction coefficient k. In order to improve the reflectivity, metals with a large k / n ratio become the preferred materials for the reflective film. However, metal thin films are soft and easy to scratch, and their physical and chemical stability is poor. The oxidation and erosion of water vapor and the like in the use environment on the metal thin film will also cause a decrease in the film reflectivity and reliability. Therefore, metal compounds such as nickel-phosphorus alloys are usually used as the beryllium mirror reflection layer in practical applications. Due to the bimetallic effect between the substrate and the surface layer, there is a bimetallic effect problem between the nickel-phosphorus alloy metal reflection layer and the beryllium-based lens layer, and good temperature control is required. At the same time, due to the effective thickness problem of the nickel-phosphorus alloy, it is not suitable for the production of large-sized and high-precision beryllium mirrors, and it is not suitable for long-term space use in the case of poor matching.

[0005] With the continuous development of coating technology, special glass has become an effective material for the surface reflective layer of beryllium mirrors. The special glass reflective layer mostly uses metallic beryllium as the base lens, and a matching special glass surface layer is deposited on the surface. Taking silicon dioxide, which is most commonly used at present, as an example, due to the large differences in thermal expansion coefficient and mechanical properties between metallic beryllium and silicon dioxide, the thermal mismatch and mechanical mismatch at the interface between the metal and ceramic phases lead to interface mismatch between the beryllium lens and the silicon dioxide reflective layer. When subjected to thermal stress and external force deformation, the reflective layer is extremely prone to cracking and peeling off, resulting in the failure of the beryllium mirror. Summary of the Invention

[0006] The present invention aims to solve the problem of interface compatibility between beryllium-based lenses and surface reflective layers, and provides a high-efficiency infrared reflective layer for the surface of large-aperture beryllium mirrors and a preparation method thereof.

[0007] In order to achieve the above technical objectives, the technical solution provided by the present invention is as follows:

[0008] A high-efficiency infrared reflective layer for the surface of a large-aperture beryllium mirror, characterized in that the infrared reflective layer sequentially includes an adhesive layer, a transition layer, a high-reflectivity layer, and a protective layer.

[0009] Further, the adhesive layer is an alloy thin film with a thickness of 10 - 500 nm, and the alloy includes one or more of Ni, Ti, and Cr.

[0010] Further, the high-reflectivity layer is an alloy thin film with a thickness of 100 nm - 1 mm, and the alloy includes one or more of Au, Ag, Al, and Cu.

[0011] Further, the transition layer is a gradient layer composed of a double component of the adhesive layer and the high-reflectivity layer. From bottom to top, the component ratio of the adhesive layer gradually decreases from 1 to 0, and the component ratio of the high-reflectivity layer gradually increases from 0 to 1, and its thickness is 0.05 - 100 μm.

[0012] Further, the protective layer is a metal-ceramic mixed phase layer doped with SiO2 in the high-reflectivity layer, and its thickness is 10 - 100 nm.

[0013] On the other hand, the present invention provides a preparation method for a high-efficiency infrared reflective layer for the surface of a large-aperture beryllium mirror, including the following steps:

[0014] Step 1: Deposit an adhesive layer on a beryllium-based lens sample to obtain a beryllium-based lens / adhesive layer sample;

[0015] Step 2: Deposit a transition layer on the beryllium-based lens / adhesive layer sample to obtain a beryllium-based lens / adhesive layer / transition layer sample;

[0016] Step 3: Deposit a high-reflectivity layer on the beryllium-based lens / adhesive layer / transition layer sample to obtain a beryllium-based lens / adhesive layer / transition layer / high-reflectivity layer sample;

[0017] Step 4: Deposit a protective layer on the beryllium-based lens / adhesive layer / intermediate layer / high-reflectivity layer to obtain a beryllium-based lens / adhesive layer / intermediate layer / high-reflectivity layer / protective layer sample.

[0018] Furthermore, in Step 1, the deposition is carried out by a single-target DC sputtering process.

[0019] Furthermore, the sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distance between the beryllium-based lens sample and the target surface of the adhesive layer target is 5 - 20 cm. The angle between the vertical direction of the target surface of the adhesive layer target and the sample surface is 45° - 90°. The rotation rate of the beryllium-based lens sample is 10 - 30 r / min. The working pressure is 0.2 - 2 Pa. The sputtering power is 5 - 50 W. The sputtering time is 1 - 10 min.

[0020] Furthermore, in Step 2, the deposition is carried out by a dual-target DC sputtering process.

[0021] Furthermore, the sputtering process is as follows: The two targets are respectively the adhesive layer material target and the high-reflectivity layer material target. The sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distances between the beryllium-based lens / adhesive layer sample and the target surfaces of the adhesive layer material target and the high-reflectivity layer material target are both 5 - 20 cm. The angles between the vertical directions of the target surfaces of the adhesive layer material target and the high-reflectivity layer material target and the surface of the beryllium-based lens / adhesive layer sample are 45° - 60°. The rotation rate of the beryllium-based lens / adhesive layer sample is 10 - 30 r / min. The working pressure is 0.2 - 2 Pa. The sputtering time is 1 - 20 min. The initial sputtering power of the adhesive layer material target is 5 - 50 W, and the end power is the glow-off power of the adhesive layer material target. The initial sputtering power of the high-reflectivity layer material target is the glow-on power of the high-reflectivity layer material target, and the end power is 5 - 50 W. During the sputtering process, the sputtering power of the adhesive layer material target gradually decreases from the initial power to the end power, and the sputtering power of the high-reflectivity layer material target gradually increases from the initial power to the end power.

[0022] Furthermore, in Step 3, the deposition is carried out by a single-target DC sputtering process.

[0023] Furthermore, the sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distance between the beryllium-based lens / adhesive layer / intermediate layer sample and the target surface of the high-reflectivity layer is 5 - 20 cm. The angle between the vertical direction of the target surface of the high-reflectivity layer target and the surface of the beryllium-based lens / adhesive layer / intermediate layer sample is 45° - 90°. The rotation rate of the beryllium-based lens / adhesive layer / intermediate layer sample is 10 - 30 r / min. The working pressure is 0.2 - 2 Pa. The sputtering power is 5 - 50 W. The sputtering time is 1 - 30 min.

[0024] Furthermore, in Step 4, the protective layer is a gradient protective layer.

[0025] Furthermore, in Step 4, the deposition is carried out by a dual-target magnetron sputtering process.

[0026] Further, the sputtering process is as follows:

[0027] Among them, the dual targets are the high-reflection layer material target and the SiO2 ceramic target, the working atmosphere is high-purity Ar gas, the target surface distance between the beryllium-based lens / adhesive layer / transition layer / high-reflection layer sample and the dual targets is 5-20 cm, the angle between the vertical direction of the target surface of the dual targets and the surface of the beryllium-based lens / adhesive layer / transition layer / high-reflection layer sample is 45°-60°, the rotation rate of the beryllium-based lens / adhesive layer / transition layer / high-reflection layer sample is 10-30 r / min, and the working pressure is 1-2 Pa. Among them, for the high-reflection layer material target, a DC sputtering power supply is used, the sputtering power is 5-20 W, and the sputtering time is 1-5 min; for the SiO2 ceramic target, an RF sputtering power supply is used, the sputtering power is 10-50 W, and the sputtering time is 5-30 min.

[0028] The present invention has the following beneficial effects:

[0029] 1. The present invention selects one or more alloy films of Au / Ag / Al / Cu as the high-reflection layer, one or more alloy films of Ni / Ti / Cr with a lattice structure similar to that of Be as the adhesive layer, and a transition layer with a gradient composition structure, so as to improve the interfacial compatibility and bonding force between the beryllium-based lens and the surface reflection layer.

[0030] 2. The present invention adds a cermet hybrid protective layer doped with SiO2 to the high-reflection layer material, enhances the mechanical strength of the surface reflection layer, and ensures high reflectivity. Description of the Drawings

[0031] Figure 1 is a schematic diagram of the infrared reflection layer structure;

[0032] Figure 2 is the reflectivity diagram of the functional gradient layer prepared in Example 1 in the infrared band of 2.5-25 μm;

[0033] In the figure: 1-beryllium-based lens, 2-adhesive layer, 3-transition layer, 4-high-reflection layer, 5-protective layer. Detailed Embodiments

[0034] The technical solutions of the present invention will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of them. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0035] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0036] Example 1

[0037] A Ni thin film with a thickness of 400 nm is sputter-deposited in sequence on the beryllium-based lens as an adhesive layer, a NiAu alloy thin film with a thickness of 600 nm as a transition layer, an Au thin film with a thickness of 800 nm as a high-reflection layer, and an Au-SiO2 thin film with a thickness of 100 nm as a protective layer. The specific preparation method is as follows:

[0038] Step 1: Deposit an adhesive layer on the beryllium-based lens sample to obtain a beryllium-based lens / Ni adhesive layer sample.

[0039] Specifically, the deposition uses a single-target DC sputtering process, and the sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distance between the beryllium-based lens sample and the target surface of the Ni adhesive layer target is 15 cm. The angle between the vertical direction of the target surface of the Ni adhesive layer target and the sample surface is 60°. The rotation rate of the beryllium-based lens sample is 30 r / min. The working pressure is 1 Pa. The sputtering power is 30 W. The sputtering time is 10 min.

[0040] Step 2: Deposit a NiAu transition layer on the beryllium-based lens / Ni adhesive layer sample to obtain a beryllium-based lens / Ni adhesive layer / NiAu transition layer sample.

[0041] Specifically, the deposition uses a dual-target DC sputtering process. The two targets are respectively the Ni adhesive layer material target and the Au high-reflection layer material target. The sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distances between the beryllium-based lens / Ni adhesive layer sample and the target surfaces of the Ni adhesive layer material target and the Au high-reflection layer material target are both 15 cm. The angles between the vertical directions of the target surfaces of the Ni adhesive layer material target and the Au high-reflection layer material target and the surface of the beryllium-based lens / Ni adhesive layer sample are 60°. The rotation rate of the beryllium-based lens / Ni adhesive layer sample is 30 r / min. The working pressure is 1 Pa. The sputtering time is 10 min. The initial sputtering power of the Ni adhesive layer material target is 30 W, and the end power is the glow-off power of the Ni adhesive layer material target. The initial sputtering power of the Au high-reflection layer material target is the glow-on power of the high-reflection layer material target, and the end power is 5 - 50 W. During the sputtering process, the initial sputtering power of Ni is 30 W, and the sputtering power gradually decreases to 15 W during the sputtering process. The initial sputtering power of Au is 10 W, and the sputtering power gradually increases to 30 W during the sputtering process.

[0042] Step 3: Deposit an Au high-reflection layer on the beryllium-based lens / Ni adhesive layer / NiAu transition layer sample to obtain a beryllium-based lens / Ni adhesive layer / NiAu transition layer sample / Au high-reflection layer sample.

[0043] Specifically, the deposition uses a single-target DC sputtering process, and the sputtering process is as follows: The working atmosphere is high-purity Ar gas. The target surface distance between the beryllium-based lens / Ni adhesive layer / NiAu transition layer sample and the Au high-reflection layer is 15 cm. The included angle between the vertical direction of the target surface of the Au high-reflection layer target and the surface of the beryllium-based lens / Ni adhesive layer / NiAu transition layer sample is 60°. The rotation rate of the beryllium-based lens / Ni adhesive layer / NiAu transition layer sample is 30 r / min. The working pressure is 0.8 Pa. The sputtering power is 30 W, and the sputtering time is 10 min.

[0044] Step 4: Deposit an Au-SiO2 protective layer on the beryllium-based lens / Ni adhesive layer / NiAu transition layer / Au high-reflection layer to obtain a beryllium-based lens / Ni adhesive layer / NiAu transition layer / Au high-reflection layer / Au-SiO2 protective layer sample.

[0045] Specifically, in Step 4, the protective layer is a gradient protective layer; the deposition uses a dual-target magnetron sputtering process, and the sputtering process is as follows: Among them, the two targets are the Au high-reflection layer material target and the SiO2 ceramic target respectively. The working atmosphere is high-purity Ar gas. The target surface distances between the beryllium-based lens / Ni adhesive layer / NiAu transition layer sample / Au high-reflection layer sample and the two targets are both 15 cm. The included angle between the vertical direction of the target surfaces of the two targets and the surface of the beryllium-based lens / Ni adhesive layer / NiAu transition layer sample / Au high-reflection layer sample is 60°. The rotation rate of the beryllium-based lens / Ni adhesive layer / NiAu transition layer / Au high-reflection layer sample is 30 r / min. The working pressure is 2 Pa. Among them, for the Au high-reflection layer material target, a DC sputtering power supply is used, the sputtering power is 15 W, and the sputtering time is 2 min; for the SiO2 ceramic target, an RF sputtering power supply is used, the sputtering power is 30 W, and the sputtering time is 10 min.

[0046] Example 2

[0047] Sputter-deposit a Ti thin film with a thickness of 10 nm as the adhesive layer, a TiAg alloy thin film with a thickness of 50 nm as the transition layer, an Ag thin film with a thickness of 100 nm as the high-reflection layer, and an Ag-SiO2 thin film with a thickness of 10 nm as the protective layer on the beryllium-based lens in sequence. The specific preparation method is as follows:

[0048] Step 1: Deposit an adhesive layer on the beryllium-based lens sample to obtain a beryllium-based lens / Ti adhesive layer sample.

[0049] Specifically, the deposition uses a single-target DC sputtering process, and the sputtering process is as follows: The working atmosphere is high-purity Ar gas. The target surface distance between the beryllium-based lens sample and the Ti adhesive layer target is 15 cm. The included angle between the vertical direction of the target surface of the Ti adhesive layer target and the sample surface is 45°. The rotation rate of the beryllium-based lens sample is 10 r / min. The working pressure is 0.2 Pa. The sputtering power is 50 W, and the sputtering time is 1 min.

[0050] Step 2: Deposit a TiAg transition layer on the beryllium-based lens / Ti bonding layer sample to obtain a beryllium-based lens / Ti bonding layer / TiAg transition layer sample.

[0051] Specifically, the deposition uses a dual-target DC sputtering process, and the sputtering process is as follows: The two targets are the Ti bonding layer material target and the Ag high-reflection layer material target respectively. The sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distances between the beryllium-based lens / Ti bonding layer sample and the target surfaces of the Ti bonding layer material target and the Ag high-reflection layer material target are both 15 cm. The included angle between the vertical directions of the target surfaces of the Ti bonding layer material target and the Ag high-reflection layer material target and the surface of the beryllium-based lens / Ti bonding layer sample is 45°. The rotation rate of the beryllium-based lens / Ti bonding layer sample is 10 r / min, the working pressure is 0.2 Pa, and the sputtering time is 3 min. During the sputtering process, the initial sputtering power of Ti is 50 W, and the sputtering power gradually decreases to 15 W during the sputtering process. The initial sputtering power of Ag is 15 W, and the sputtering power gradually increases to 50 W during the sputtering process.

[0052] Step 3: Deposit an Ag high-reflection layer on the beryllium-based lens / Ti bonding layer / TiAg transition layer sample to obtain a beryllium-based lens / Ti bonding layer / TiAg transition layer sample / Ag high-reflection layer sample.

[0053] Specifically, the deposition uses a single-target DC sputtering process, and the sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distance between the beryllium-based lens / Ti bonding layer / TiAg transition layer sample and the target surface of the Ag high-reflection layer is 15 cm. The included angle between the vertical direction of the target surface of the Ag high-reflection layer target and the surface of the beryllium-based lens / Ti bonding layer / TiAg transition layer sample is 45°. The rotation rate of the beryllium-based lens / Ti bonding layer / TiAg transition layer sample is 10 r / min, the working pressure is 0.2 Pa, the sputtering power is 50 W, and the sputtering time is 5 min.

[0054] Step 4: Deposit an Ag-SiO2 protective layer on the beryllium-based lens / Ti bonding layer / TiAg transition layer / Ag high-reflection layer to obtain a beryllium-based lens / Ti bonding layer / TiAg transition layer / Ag high-reflection layer / Ag-SiO2 protective layer sample.

[0055] Specifically, in step 4, the protective layer is a gradient protective layer; the deposition uses a dual-target magnetron sputtering process, and the sputtering process is as follows: Among them, the two targets are the Ag high-reflection layer material target and the SiO2 ceramic target, the working atmosphere is high-purity Ar gas, and the target surface distances between the beryllium-based lens / Ti adhesive layer / TiAg transition layer sample / Ag high-reflection layer sample and the two targets are both 5 cm. The angle between the vertical direction of the target surface of the two target materials and the surface of the beryllium-based lens / Ti adhesive layer / TiAg transition layer sample / Ag high-reflection layer sample is 45°, the rotation rate of the beryllium-based lens / Ti adhesive layer / TiAg transition layer / Ag high-reflection layer sample is 10 r / min, and the working pressure is 1 Pa. Among them, for the Ag high-reflection layer material target, a DC sputtering power supply is used, the sputtering power is 10 W, and the sputtering time is 5 min; for the SiO2 ceramic target, an RF sputtering power supply is used, the sputtering power is 30 W, and the sputtering time is 5 min.

[0056] Example 3

[0057] A Cr film with a thickness of 500 nm is sputter-deposited in sequence on the beryllium-based lens as an adhesive layer, a CrAl alloy film with a thickness of 100 μm as a transition layer, an Al film with a thickness of 1 mm as a high-reflection layer, and an Al-SiO2 film with a thickness of 100 nm as a protective layer. The specific preparation method is as follows:

[0058] Step 1: Deposit an adhesive layer on the beryllium-based lens sample to obtain a beryllium-based lens / Cr adhesive layer sample.

[0059] Specifically, the deposition uses a single-target DC sputtering process, and the sputtering process is as follows: The working atmosphere is high-purity Ar gas, the target surface distance between the beryllium-based lens sample and the Cr adhesive layer target is 20 cm, the angle between the vertical direction of the target surface of the Cr adhesive layer target and the sample surface is 90°, the rotation rate of the beryllium-based lens sample is 30 r / min, the working pressure is 2 Pa, the sputtering power is 50 W, and the sputtering time is 10 min.

[0060] Step 2: Deposit a CrAl transition layer on the beryllium-based lens / Cr adhesive layer sample to obtain a beryllium-based lens / Cr adhesive layer / CrAl transition layer sample.

[0061] Specifically, the deposition uses a dual-target DC sputtering process, and the sputtering process is as follows: The two targets are the Cr bonding layer material target and the Al high-reflection layer material target respectively. The sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distances between the beryllium-based lens / Cr bonding layer sample and the target surfaces of the Cr bonding layer material target and the Al high-reflection layer material target are both 20 cm. The included angle between the vertical direction of the target surfaces of the Cr bonding layer material target and the Al high-reflection layer material target and the surface of the beryllium-based lens / Cr bonding layer sample is 60°. The rotation rate of the beryllium-based lens / Cr bonding layer sample is 30 r / min, the working pressure is 2 Pa, and the sputtering time is 20 min. During the sputtering process, the initial sputtering power of Cr is 50 W, and the sputtering power gradually decreases to 10 W during the sputtering process. The initial sputtering power of Al is 10 W, and the sputtering power gradually increases to 50 W during the sputtering process.

[0062] Step 3: Deposit an Al high-reflection layer on the beryllium-based lens / Cr bonding layer / CrAl transition layer sample to obtain a beryllium-based lens / Cr bonding layer / CrAl transition layer sample / Al high-reflection layer sample.

[0063] Specifically, the deposition uses a single-target DC sputtering process, and the sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distance between the beryllium-based lens / Cr bonding layer / CrAl transition layer sample and the target surface of the Al high-reflection layer is 20 cm. The included angle between the vertical direction of the target surface of the Al high-reflection layer target and the surface of the beryllium-based lens / Cr bonding layer / CrAl transition layer sample is 90°. The rotation rate of the beryllium-based lens / Cr bonding layer / CrAl transition layer sample is 30 r / min, the working pressure is 2 Pa, the sputtering power is 50 W, and the sputtering time is 30 min.

[0064] Step 4: Deposit an Al-SiO2 protective layer on the beryllium-based lens / Cr bonding layer / CrAl transition layer / Al high-reflection layer to obtain a beryllium-based lens / Cr bonding layer / CrAl transition layer / Al high-reflection layer / Al-SiO2 protective layer sample.

[0065] Specifically, in Step 4, the protective layer is a gradient protective layer; the deposition uses a dual-target magnetron sputtering process, and the sputtering process is as follows: Among them, the two targets are the Al high-reflection layer material target and the SiO2 ceramic target respectively. The working atmosphere is high-purity Ar gas. The distances between the beryllium-based lens / Cr bonding layer / CrAl transition layer sample / Al high-reflection layer sample and the target surfaces of the two targets are both 20 cm. The included angle between the vertical direction of the target surfaces of the two targets and the surface of the beryllium-based lens / Cr bonding layer / CrAl transition layer sample / Al high-reflection layer sample is 60°. The rotation rate of the beryllium-based lens / Cr bonding layer / CrAl transition layer / Al high-reflection layer sample is 30 r / min, and the working pressure is 2 Pa. Among them, for the Al high-reflection layer material target, a DC sputtering power supply is used, the sputtering power is 20 W, and the sputtering time is 2 min; for the SiO2 ceramic target, an RF sputtering power supply is used, the sputtering power is 30 W, and the sputtering time is 5 min.

[0066] As Figure 1 This is a structural diagram of an infrared reflective layer. From bottom to top, it is a beryllium-based lens 1, an adhesive layer 2, a transition layer 3, a high-reflectivity layer 4, and a protective layer 5 in sequence.

[0067] Figure 2 This is the reflectivity of the functionally graded layer obtained in Example 1 in the infrared band of 2.5 - 25 μm. It can be seen that the prepared infrared reflective layer has a high infrared reflectivity. The reflectivity in the infrared band of 2.5 - 20 μm is greater than 98%, and among them, the reflectivity in the infrared bands of 2.5 - 3.02 μm, 7.52 - 9.39 μm, and 18.13 - 20.17 μm is greater than 99%.

[0068] Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

[0069] The above specific embodiments are detailed descriptions of the present invention. It cannot be determined that the specific embodiments of the present invention are only limited to these descriptions. For those of ordinary skill in the technical field to which the present invention belongs, without departing from the concept of the present invention, several simple deductions and substitutions can still be made, and all should be regarded as belonging to the protection scope of the present invention.

Claims

1. An efficient infrared reflective layer on the surface of a large-aperture beryllium mirror, characterized in that, The infrared reflection layer sequentially includes an adhesive layer, a transition layer, a high-reflection layer, and a protective layer.

2. The high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 1, characterized in that The adhesive layer is an alloy thin film with a thickness of 10 - 500 nm, and the alloy includes one or more of Ni, Ti, and Cr.

3. The high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 1, characterized in that, The high-reflection layer is an alloy thin film with a thickness of 100 nm - 1 mm, and the alloy includes one or more of Au, Ag, Al, and Cu.

4. The high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 1, characterized in that, The transition layer is a gradient layer composed of the dual components of the adhesive layer and the high-reflection layer. From bottom to top, the component ratio of the adhesive layer gradually decreases from 1 to 0, and the component ratio of the high-reflection layer gradually increases from 0 to 1. Its thickness is 0.05 - 100 μm.

5. The high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 1, wherein The protective layer is a cermet mixed-phase layer with the high-reflection layer doped with SiO2, and its thickness is 10 - 100 nm.

6. A method for preparing an efficient infrared reflective layer on the surface of a large-aperture beryllium mirror as described in any one of claims 1-5, characterized in that, It includes the following steps: Step 1: Deposit an adhesive layer on the beryllium-based lens sample to obtain a beryllium-based lens / adhesive layer sample; Step 2: Deposit a transition layer on the beryllium-based lens / adhesive layer sample to obtain a beryllium-based lens / adhesive layer / transition layer sample; Step 3: Deposit a high-reflection layer on the beryllium-based lens / adhesive layer / transition layer sample to obtain a beryllium-based lens / adhesive layer / transition layer / high-reflection layer sample; Step 4: Deposit a protective layer on the beryllium-based lens / adhesive layer / transition layer / high-reflection layer to obtain a beryllium-based lens / adhesive layer / transition layer / high-reflection layer / protective layer sample.

7. The preparation method of an efficient infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 6, characterized in that In Step 1, the deposition adopts a single-target DC sputtering process.

8. The preparation method of a high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 7, characterized in that, The sputtering process is as follows: The working atmosphere is high-purity Ar gas. The target surface distance between the beryllium-based lens sample and the adhesive layer target is 5 - 20 cm. The angle between the vertical direction of the target surface of the adhesive layer target and the sample surface is 45° - 90°. The rotation rate of the beryllium-based lens sample is 10 - 30 r / min. The working pressure is 0.2 - 2 Pa. The sputtering power is 5 - 50 W. The sputtering time is 1 - 10 min.

9. The preparation method of an efficient infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 6, wherein, In Step 2, the deposition adopts a dual-target DC sputtering process.

10. The preparation method of an efficient infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 9, characterized in that, The sputtering process is as follows: The two targets are respectively the adhesive layer material target and the high-reflection layer material target. The sputtering process is as follows: The working atmosphere is high-purity Ar gas. The target surface distances between the beryllium-based lens / adhesive layer sample and the target surfaces of the adhesive layer material target and the high-reflection layer material target are both 5 - 20 cm. The angles between the vertical directions of the target surfaces of the adhesive layer material target and the high-reflection layer material target and the surface of the beryllium-based lens / adhesive layer sample are 45° - 60°. The rotation rate of the beryllium-based lens / adhesive layer sample is 10 - 30 r / min. The working pressure is 0.2 - 2 Pa. The sputtering time is 1 - 20 min. The initial sputtering power of the adhesive layer material target is 5 - 50 W, and the end power is the cut-off glow power of the adhesive layer material target. The initial sputtering power of the high-reflection layer material target is the starting glow power of the high-reflection layer material target, and the end power is 5 - 50 W. During the sputtering process, the sputtering power of the adhesive layer material target gradually decreases from the initial power to the end power, and the sputtering power of the high-reflection layer material target gradually increases from the initial power to the end power.

11. The preparation method of a highly efficient infrared reflective layer on the surface of a large-aperture beryllium mirror according to claim 6, characterized in that, In Step 3, the deposition adopts a single-target DC sputtering process.

12. The preparation method of a high-efficiency infrared reflective layer on the surface of a large-aperture beryllium mirror according to claim 11, wherein The sputtering process is as follows: The working atmosphere is high-purity Ar gas. The distance between the beryllium-based lens / adhesive layer / transition layer sample and the target surface of the high-reflection layer is 5 - 20 cm. The angle between the vertical direction of the target surface of the high-reflection layer target and the surface of the beryllium-based lens / adhesive layer / transition layer sample is 45° - 90°. The rotation rate of the beryllium-based lens / adhesive layer / transition layer sample is 10 - 30 r / min. The working pressure is 0.2 - 2 Pa. The sputtering power is 5 - 50 W. The sputtering time is 1 - 30 min.

13. The preparation method of a high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 6, wherein In step 4, the protective layer is a gradient protective layer.

14. The preparation method of an efficient infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 6, characterized in that, In step 4, the deposition uses a dual-target magnetron sputtering process.

15. The preparation method of a high-efficiency infrared reflection layer on the surface of a large-aperture beryllium mirror according to claim 14, characterized in that The sputtering process is as follows: Among them, the two targets are the high-reflection layer material target and the SiO2 ceramic target. The working atmosphere is high-purity Ar gas. The distance between the beryllium-based lens / adhesive layer / transition layer / high-reflection layer sample and the target surfaces of the two targets is 5 - 20 cm. The angle between the vertical direction of the target surfaces of the two targets and the surface of the beryllium-based lens / adhesive layer / transition layer / high-reflection layer sample is 45° - 60°. The rotation rate of the beryllium-based lens / adhesive layer / transition layer / high-reflection layer sample is 10 - 30 r / min. The working pressure is 1 - 2 Pa. Among them, for the high-reflection layer material target, a DC sputtering power supply is used, the sputtering power is 5 - 20 W, and the sputtering time is 1 - 5 min. For the SiO2 ceramic target, an RF sputtering power supply is used, the sputtering power is 10 - 50 W, and the sputtering time is 5 - 30 min.

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