Thin film deposition sample table and thin film deposition chamber

Abstract

The invention discloses a thin film deposition sample table and a thin film deposition chamber, relates to the field of semiconductor process equipment, and aims to solve the problems of slow temperature change and long process time of a sample on the sample table in the chamber. The thin film deposition sample table comprises a bearing disc used for bearing and placing a sample; the refrigeration pipe is arranged in the bearing disc and is used for cooling the bearing disc; the heat-conducting plate is arranged at the bottom of the bearing disc; the heating part is arranged in the heat conduction plate and used for heating the heat conduction plate and transferring generated heat to the bearing disc through the heat conduction plate. A sample to be processed is placed on the bearing disc, the cavity is closed for thin film deposition, when the sample needs to be heated, heating is conducted through the heating component, and when the sample needs to be cooled, cooling is conducted through the cooling pipe, so that the temperature change requirement of the sample in the cavity is met, and the process time of thin film deposition is shortened.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process equipment, and in particular to a thin film deposition sample stage and a thin film deposition chamber. Background Art

[0002] ALD (Atomic Layer Deposition) technology is one of the most widely used thin film growth technologies. It selectively introduces two or more gas-phase chemical reaction precursors into the reaction chamber in alternating pulses, and a gas-solid chemical adsorption reaction occurs on the surface of the deposition substrate to form a thin film. Compared with thin film preparation methods such as chemical vapor deposition (CVD) and physical vapor deposition (PVD), the thin films deposited by ALD have excellent conformality and can be used for large-area thin film deposition, but the deposition rate is slow. Due to the self-limiting nature of the ALD reaction process, the deposition process is greatly affected by temperature. Different process temperatures need to be set for different materials during the ALD deposition process.

[0003] During the growth of large-area Si / Mo multilayer films, Si films require relatively high temperatures, while Mo films require relatively low temperatures. During the ALD deposition process, the sample must be heated and cooled to reach the process temperatures for different film materials. After the ALD deposition process, the reaction chamber and sample must be cooled before sampling. In the current mainstream deposition method, the chamber must be kept in a vacuum throughout the entire process, and the sample stage only provides support for the sample. This results in a slow temperature change within the chamber for the sample on the stage, resulting in a long process time. Summary of the Invention

[0004] The object of the present invention is to provide a thin film deposition sample stage and a thin film deposition chamber, which are used to meet the temperature change requirements of the sample in the chamber.

[0005] In order to achieve the above object, the present invention provides the following technical solutions:

[0006] In a first aspect, the present invention provides a thin film deposition sample stage, comprising:

[0007] A tray for supporting and placing samples;

[0008] A refrigeration pipe is provided inside the tray and is used to cool the tray;

[0009] A heat conducting plate is arranged at the bottom of the tray;

[0010] The heating component is arranged inside the heat conducting plate and is used to heat the heat conducting plate and transfer the generated heat to the supporting tray through the heat conducting plate.

[0011] Optionally, in the above-mentioned thin film deposition sample stage, the cooling tube and the heating component are both spiral-shaped, the cooling tube is coiled inside the supporting plate, and the heating component is coiled inside the heat conducting plate.

[0012] Optionally, in the above-mentioned thin film deposition sample stage, a plurality of cooling tubes and a plurality of heating components are provided, the plurality of cooling tubes are arranged at intervals along the radial direction, and the plurality of heating components are arranged at intervals along the radial direction.

[0013] Optionally, in the above-mentioned thin film deposition sample stage, the projections of the refrigeration tube and the heating component on the supporting tray are alternately coiled.

[0014] Optionally, in the above-mentioned thin film deposition sample stage, the heating component includes a heating wire or an inductor coil.

[0015] Optionally, the thin film deposition sample stage further includes a positioning column, which is arranged at the center of the supporting tray and is used to fix the sample.

[0016] Optionally, the above-mentioned thin film deposition sample table also includes at least two support columns, one end of which is fixedly connected to the side of the heat conduction plate away from the support tray, and two adjacent support columns are arranged at intervals, and the support columns are used to support the bottom of the heat conduction plate in suspension.

[0017] Optionally, the above-mentioned thin film deposition sample table also includes at least two layers of reflective plates, which are connected to the bottom of the heat conducting plate. Each layer of reflective plates is fixedly connected to the side wall of the support column. There is a gap between the two adjacent layers of reflective plates. The reflective plates are used to reflect the heat generated by the heating component to the heat conducting plate.

[0018] Optionally, in the thin film deposition sample stage, the support tray and the heat conducting plate are welded;

[0019] Alternatively, the supporting tray and the heat conducting plate are an integrally formed structure.

[0020] In a second aspect, the present invention also provides a thin film deposition chamber, comprising: a cavity, a top cover and any one of the above-mentioned thin film deposition sample stages, the cavity having an inlet for placing the sample to be processed into the cavity, the thin film deposition sample stage being arranged at the bottom of the cavity, and the top cover being arranged at the top of the cavity.

[0021] Compared with the existing technology, when adopting the above technical solution, the operator first places the sample to be processed on the support tray, and then closes the chamber for thin film deposition. During this process, when the sample needs to be heated, it only needs to be heated by the heating component. The heat generated by the heating component is transferred to the support tray through the heat conduction plate to achieve rapid heating of the sample. When the sample needs to be cooled, the heating component needs to be turned off and the refrigeration tube is started at the same time. The support tray is cooled by the refrigeration tube. The support tray is in direct contact with the sample and heat is taken away from the sample by heat conduction, thereby achieving rapid cooling of the sample. Compared with the traditional sample stage that only provides support for the sample, the thin film deposition sample stage of the present application achieves rapid cooling and heating of the sample by setting the refrigeration tube and the heating component, ensuring the temperature change requirements of the sample in the chamber and shortening the process time of thin film deposition. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0023] Figure 1 A schematic cross-sectional view of a thin film deposition sample stage provided in an embodiment of the present invention;

[0024] Figure 2 This is a top view of a thin film deposition sample stage provided in an embodiment of the present invention.

[0025] Reference numerals:

[0026] 1-support tray; 2-refrigeration pipe; 3-heat conduction plate; 4-heating component; 5-positioning column; 6-support column; 7-reflection plate. DETAILED DESCRIPTION

[0027] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0028] It should be noted that when an element is referred to as being “fixed on” or “disposed on” another element, it may be directly on the other element or indirectly on the other element. When an element is referred to as being “connected to” another element, it may be directly connected to the other element or indirectly connected to the other element.

[0029] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Thus, a feature specified as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined. "Several" means one or more, unless otherwise specifically defined.

[0030] In the description of the present invention, it should be understood that the terms "up", "down", "front", "back", "left", "right", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation on the present invention.

[0031] In the description of the present invention, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed, detachable, or integral connections; mechanical or electrical connections; direct or indirect connections through an intermediate medium; and may encompass internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0032] like Figure 1 and Figure 2 As shown, an embodiment of the present invention provides a thin film deposition sample stage, hereinafter referred to as the sample stage, which includes: a support tray 1, a cooling tube 2, a heat conducting plate 3 and a heating component 4.

[0033] Among them, the support tray 1 is used to support and place the sample; the refrigeration tube 2 is arranged inside the support tray 1, and the refrigeration tube 2 is used to cool the support tray 1; the heat conduction plate 3 is arranged at the bottom of the support tray 1; the heating component 4 is arranged inside the heat conduction plate 3, and the heating component 4 is used to heat the heat conduction plate 3 and transfer the generated heat to the support tray 1 through the heat conduction plate 3.

[0034] When implementing it specifically, Figure 1As shown, the operator first places the sample to be processed on the holding tray 1, and then closes the chamber for thin film deposition. During this process, when the sample needs to be heated, it only needs to be heated by the heating component 4. The heat generated by the heating component 4 is transferred to the holding tray 1 through the heat conducting plate 3 to achieve rapid heating of the sample. When the sample needs to be cooled, the heating component 4 needs to be turned off, and the refrigeration tube 2 is started at the same time. The holding tray 1 is cooled by the refrigeration tube 2. The holding tray 1 is in direct contact with the sample and heat is taken away from the sample by heat conduction, thereby achieving rapid cooling of the sample. Compared with the traditional sample stage that only provides support for the sample, the thin film deposition sample stage of the present application achieves rapid cooling and heating of the sample by providing the refrigeration tube 2 and the heating component 4, ensuring the temperature change requirements of the sample in the chamber and shortening the process time of thin film deposition.

[0035] like Figure 1 As shown, specifically, in this embodiment, a first groove is provided at the bottom of the support tray 1, a second groove is provided at the bottom of the heat conducting plate 3, the cooling tube 2 is embedded in the first groove, and the heating component 4 is embedded in the second groove. When the heating component 4 is heated, the bottom of the heat conducting plate 3 is heated and the generated heat is transferred to the support tray 1 located above, and then the sample is heated by the support tray 1; when the heating component 4 is turned off and the cooling tube 2 is turned on, the cooling tube 2 located at the bottom of the support plate gradually absorbs heat upwards to cool the sample. At the same time, the heat conducting plate 3 located below the cooling tube 2 can also achieve rapid cooling through heat conduction due to direct contact with the cooling tube 2. The cooling tube 2 is arranged at the bottom of the support tray 1 and the heating component 4 is arranged at the bottom of the heat conducting plate 3, which avoids direct contact between the sample and the cooling tube 2 and the heating component 4, thereby avoiding damage to the sample and ensuring uniform heating of the sample on the sample stage.

[0036] like Figure 2 Specifically, in this embodiment, the cooling tube 2 and the heating element 4 are both spiral-shaped, with the cooling tube 2 coiled inside the support plate and the heating element 4 coiled inside the heat conducting plate 3. The spiral coiling increases the coverage area of the cooling tube 2 and the heating element 4, allowing the support plate and the heat conducting plate 3 to be heated more evenly, facilitating uniform heating and cooling of the sample.

[0037] like Figure 1 As shown, specifically, in this embodiment, multiple cooling tubes 2 and multiple heating components 4 are provided, and the multiple cooling tubes 2 are arranged at intervals along the radial direction, and the multiple heating components 4 are arranged at intervals along the radial direction. Among them, there can be 2, 3, 4 cooling tubes 2, etc., and there can be 2, 3, 4 heating components 4, etc. There is no specific limitation on the number of cooling tubes 2 and the number of heating components 4 provided, as long as the cooling tubes 2 meet the cooling requirements of the sample and the heating components 4 meet the heating requirements of the sample.

[0038] like Figure 2 As shown, specifically, in this embodiment, the projections of the refrigeration tube 2 and the heating component 4 on the support plate 1 are alternately coiled, avoiding close contact between the refrigeration tube 2 and the heating component 4, so that the sample can be quickly and evenly cooled and quickly and evenly heated on the support plate, shortening the process time, that is, shortening the deposition time of the atomic layer deposition technology.

[0039] Specifically, in this embodiment, the heating component 4 includes a heating wire or an induction coil. Both the heating wire and the induction coil can generate heat by energizing the coiled heating wire or coil. The heating component 4 is not specifically limited herein, as long as the heating component 4 meets the heating requirements. The heating component 4 transfers heat to the heat conducting plate 3, which then transfers the heat to the support plate, thereby evenly heating the sample.

[0040] like Figure 1 and Figure 2 Specifically, in this embodiment, the sample stage further includes a positioning post 5, which is disposed at the center of the support tray 1 and is used to secure the sample. The positioning post 5 facilitates securing the position of the sample on the support tray 1, reducing the risk of uneven heating of the sample due to deviation in the sample placement position.

[0041] Specifically, in this embodiment, the sample stage further includes at least two support columns 6, one end of each of which is fixedly connected to the side of the heat conducting plate 3 facing away from the support tray 1. Adjacent support columns 6 are spaced apart, and serve to support the bottom of the heat conducting plate 3 in mid-air. The number of support columns 6 may be two, three, or five, and there is no specific limit to the number of support columns 6 provided, as long as the support columns 6 meet the support requirements for the heat conducting plate 3. The support columns 6 create a gap between the heat conducting plate 3 and the inner wall of the chamber, reducing the risk of damage to the chamber structure caused by direct contact between the heating element 4 disposed at the bottom of the heat conducting plate 3 and the inner wall of the chamber when generating local heat.

[0042] like Figure 1As shown, specifically, in this embodiment, the sample stage further includes at least two layers of reflective plates 7, which are connected to the bottom of the heat conducting plate 3. Each layer of reflective plates 7 is fixedly connected to the sidewalls of the support pillars 6. A gap exists between adjacent layers of reflective plates 7. The reflective plates 7 are used to reflect heat generated by the heating component 4 toward the heat conducting plate 3. The gap between adjacent layers of reflective plates 7 prevents the heating component 4 from diffusing heat downward, reducing heat loss when the heating component 4 disposed at the bottom of the heat conducting plate 3 generates heat, thereby achieving rapid heating of the sample placed on the support tray 1. The reflective plates 7 can be provided in two, three, or four layers, etc., and there is no specific limitation on the number of layers of reflective plates 7. As long as the reflective plates 7 are fixedly connected to reflect heat from the heat conducting plate 3, multiple layers of reflective plates 7 can improve reflection efficiency, achieve rapid heating, and enhance the heating efficiency of the heat conducting plate 3.

[0043] Specifically, in this embodiment, the supporting tray 1 and the heat conducting plate 3 are welded, which facilitates the installation and fixation of the supporting tray 1 and the heat conducting plate 3 and ensures the structural stability of the sample stage.

[0044] In other embodiments, the support tray 1 and the heat conducting plate 3 are integrally formed, which reduces the installation process.

[0045] At the same time, the present invention also provides a thin film deposition chamber, comprising: a cavity, a top cover and any of the above-mentioned thin film deposition sample stages, the cavity having an inlet, the inlet being used to place the sample to be processed into the cavity, the thin film deposition sample stage being arranged at the bottom of the cavity, and the top cover being arranged at the top of the cavity.

[0046] During operation, the operator opens the top cover, places the sample to be processed onto the sample table in the cavity through the sampling port, and closes the top cover to form a vacuum chamber inside the cavity. In the process flow, that is, the growth process of large-area Si / Mo film, the growth of Si film requires a higher temperature. At this time, heat is generated by the heating component 4 and transferred to the support plate through the heat conduction plate 3 to achieve rapid heating of the sample to be processed; the growth temperature of the Mo film is relatively low. After the deposition process is completed, the reaction chamber and the sample need to be cooled. At this time, helium can be introduced into the refrigeration pipe 2, and the low-temperature properties of helium can be used to achieve cooling of the support tray 1 and the heat conduction plate 3, so that the temperature change in the thin film deposition chamber can be achieved while maintaining a vacuum, shortening the process time of thin film deposition and meeting the temperature change requirements of the sample in the chamber.

[0047] It should be noted that helium, nitrogen or other materials with refrigeration properties can be introduced into the refrigeration tube 2. There is no specific limitation on the material introduced into the refrigeration tube 2, as long as the cooling requirement of the refrigeration tube 2 for the support tray 1 is met.

[0048] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0049] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A thin film deposition sample stage, characterized in that: include: A tray for supporting and placing samples; A refrigeration pipe is provided inside the support tray, and the refrigeration pipe is used to cool the support tray; A heat conducting plate is provided at the bottom of the supporting tray; A heating component is arranged inside the heat conducting plate, and is used for heating the heat conducting plate and transferring the generated heat to the supporting tray through the heat conducting plate.

2. The thin film deposition sample stage according to claim 1, characterized in that: The refrigeration pipe and the heating component are both spiral-shaped. The refrigeration pipe is coiled inside the supporting plate, and the heating component is coiled inside the heat conducting plate.

3. The thin film deposition sample stage according to claim 2, characterized in that: A plurality of the refrigeration tubes and the heating components are provided. The plurality of refrigeration tubes are arranged at intervals along the radial direction, and the plurality of heating components are arranged at intervals along the radial direction.

4. The thin film deposition sample stage according to claim 2, characterized in that: The projections of the refrigeration tube and the heating component on the support tray are alternately coiled.

5. The thin film deposition sample stage according to claim 1, characterized in that: The heating component includes a heating wire or an induction coil.

6. The thin film deposition sample stage according to claim 1, characterized in that: It also includes a positioning column, which is arranged at the center of the supporting tray and is used to fix the sample.

7. The thin film deposition sample stage according to claim 1, characterized in that: It also includes at least two support columns, one end of which is fixedly connected to a side of the heat conducting plate away from the support tray, and two adjacent support columns are arranged at intervals, and the support columns are used to support the bottom of the heat conducting plate in suspension.

8. The thin film deposition sample stage according to claim 7, characterized in that: It also includes at least two layers of reflecting plates, which are connected to the bottom of the heat conducting plate. Each layer of the reflecting plates is fixedly connected to the side wall of the support column. There is a gap between the reflecting plates of two adjacent layers. The reflecting plates are used to reflect the heat generated by the heating component to the heat conducting plate.

9. The thin film deposition sample stage according to claim 1, characterized in that: The support tray and the heat conducting plate are welded; Alternatively, the support tray and the heat conducting plate are an integrally formed structure.

10. A thin film deposition chamber, comprising: A cavity, a top cover and a thin film deposition sample stage as described in any one of claims 1 to 9, wherein the cavity has an inlet, the inlet is used to place the sample to be processed into the cavity, the thin film deposition sample stage is arranged at the bottom of the cavity, and the top cover is arranged at the top of the cavity.

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