Preparation method for enhancing performance of TMDCs heterojunction photoelectric detector with Cu-coated CuO core-shell structure

Through the 0D/2D Cu@CuO/MoS2 heterojunction of Cu@CuO core-shell structure, the problems of slow response speed and high dark current in the existing low-dimensional hybrid heterojunction are solved, and efficient photoelectric conversion efficiency and fast response are achieved.

CN120456626APending Publication Date: 2025-08-08CHANGCHUN UNIV OF SCI & TECH
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Patent Information

Application Number
CN202510656194.9
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-21
Publication Date
2025-08-08

AI Technical Summary

Technical Problem

The existing 0D/2D low-dimensional hybrid heterojunction photodetectors introduce defects when metal nanoparticles are integrated into the surface of TMDCs, resulting in carriers being captured, prolonging the transmission time, resulting in slow response speed and high dark currents.

Method used

Design the 0D/2D Cu@CuO/MoS2 heterojunction of Cu@CuO core-shell structure, and form a built-in electric field with the plasma shell material CuO and MoS2 to promote the separation of photogenerated electron-hole pairs, and cooperate with the thermal electrons of LSPR to inject into the MoS2 layer. The heterojunction is constructed by spin coating method to reduce the interface damage of metal/semiconductor contact.

Benefits of technology

The photoelectric conversion efficiency of high responsiveness and fast response speed is achieved, the contradiction between light absorption and carrier separation in traditional heterojunction systems is solved, dark current is reduced, and the photoelectric conversion efficiency and response speed of the device are improved.

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Abstract

The invention designs a 0D / 2D Cu-coated CuO / MoS2 heterojunction of a Cu-coated CuO core-shell structure enhanced TMDCs system, and the 0D / 2D Cu-coated CuO / MoS2 heterojunction can realize efficient photoelectric conversion and is applied to a high-sensitivity photoelectric detector. According to the invention, a core-shell plasma structure is obtained through a metal surface thermal oxidation technology, and a type-II 0D / 2D Cu-coated CuO / MoS2 heterojunction is constructed. On one hand, a built-in electric field is formed by a plasma shell layer material CuO and MoS2, so that separation of photo-induced electron-hole pairs can be promoted, hot electrons of LSPR (Local Surface Plasma Resonance) can be injected into a MoS2 layer in cooperation, the photoelectric conversion efficiency of a heterojunction system is improved, the contradiction between light absorption and carrier separation of a traditional heterojunction system is solved, and the photoelectric conversion efficiency of the heterojunction system is improved. And the response speed of the device is improved. And on the other hand, the shell layer material CuO can reduce interface damage caused by metal / semiconductor contact, so that the problem of high dark current accompanied by the plasma type photoelectric detector under high light response is solved. Compared with a traditional plasma type device only paying attention to light absorption, the plasma / TMDCs system heterojunction photoelectric detector designed by the invention effectively solves the problem of low response speed and shows excellent photoelectric conversion efficiency. The method is of great significance to development of low-dimensional hybrid heterojunction photoelectric detectors.
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