Preparation method for enhancing performance of TMDCs heterojunction photoelectric detector with Cu-coated CuO core-shell structure
Through the 0D/2D Cu@CuO/MoS2 heterojunction of Cu@CuO core-shell structure, the problems of slow response speed and high dark current in the existing low-dimensional hybrid heterojunction are solved, and efficient photoelectric conversion efficiency and fast response are achieved.
Patent Information
- Application Number
- CN202510656194.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-05-21
- Publication Date
- 2025-08-08
AI Technical Summary
The existing 0D/2D low-dimensional hybrid heterojunction photodetectors introduce defects when metal nanoparticles are integrated into the surface of TMDCs, resulting in carriers being captured, prolonging the transmission time, resulting in slow response speed and high dark currents.
Design the 0D/2D Cu@CuO/MoS2 heterojunction of Cu@CuO core-shell structure, and form a built-in electric field with the plasma shell material CuO and MoS2 to promote the separation of photogenerated electron-hole pairs, and cooperate with the thermal electrons of LSPR to inject into the MoS2 layer. The heterojunction is constructed by spin coating method to reduce the interface damage of metal/semiconductor contact.
The photoelectric conversion efficiency of high responsiveness and fast response speed is achieved, the contradiction between light absorption and carrier separation in traditional heterojunction systems is solved, dark current is reduced, and the photoelectric conversion efficiency and response speed of the device are improved.