CMP machine with improved throughput and process flexibility

Abstract

The invention relates to a CMP machine with improved throughput and processing flexibility. An apparatus for performing chemical mechanical planarization is disclosed. The apparatus includes a support, wherein the axis of rotation extends through the support. The apparatus includes at least one elongate member including a first portion and a second portion opposite the first portion. The first portion is configured to be rotatably connected to the support and to pivot the elongate member in a single direction about an axis of rotation by an angle of rotation of at least about 270 degrees relative to the support. The apparatus includes a carrier head configured to be connected to the second portion and to hold and process the substrate.

Description

[0001] This application is a divisional application of Chinese patent application 2018800319460 (PCT / US2018 / 026590) filed on April 6, 2018, entitled “CMP MACHINE WITH IMPROVED THROUGHPUT AND PROCESSING FLEXIBILITY”.

[0002] Incorporation by reference into any priority application

[0003] This application claims priority to US 62 / 602,538, filed April 26, 2017, the entire contents of which are incorporated herein by reference. Technical Field

[0004] The disclosed technology relates to semiconductor processing equipment, and more particularly, to chemical mechanical planarization (CMP) systems and equipment having a reduced footprint and operational capabilities that allow objects to be processed and manipulated in compressed spaces. Background Art

[0005] CMP machines are widely used in the semiconductor manufacturing industry.

[0006] A machine with a completely different construction is needed to achieve solutions to some of the demands in today's market.Machines of the type available today have reduced throughput due to limited wafer handling and multi-wafer processing options. Summary of the Invention

[0007] An object of the disclosed technology is to provide an improved chemical mechanical planarization (CMP) apparatus having a reduced footprint and increased throughput and functionality.

[0008] According to one embodiment, a substrate carrier head system is disclosed, comprising a support, wherein a rotational axis extends through the support, at least one elongated member comprising a first portion and a second portion opposite the first portion, wherein the first portion is configured to be rotatably connected to the support and to pivot the elongated member about the rotational axis relative to the support through a rotational angle of at least approximately 270 degrees in a single direction, and a carrier head configured to be connected to the second portion and to hold and process a substrate.

[0009] According to one aspect, the angle of rotation is substantially unrestricted in a single direction.

[0010] According to yet another aspect, a carrier head includes a diaphragm configured to be pressurized to allow a substrate to contact and be processed by a polishing pad on a platen.

[0011] According to another aspect, a controller is disclosed that is configured to cause a carrier head to move a substrate from a first position that enables a first process to be performed on a substrate on a first platen to a second position that enables a second process to be performed on a substrate on a second platen.

[0012] According to yet another aspect, the first and second processes are different.

[0013] According to another aspect, the first machining is a bulk removal machining and the second machining is a fine removal machining.

[0014] According to another embodiment, a substrate carrier head system is disclosed, which includes at least one support member, wherein a first rotation axis extends through the support member, at least one slender member, which includes a first link, the first link having a first portion and a second portion opposite the first portion, wherein the first portion is configured to be rotatably connected to the support member and to cause the first link to pivot about the first rotation axis relative to the support member by a first rotation angle, and wherein the second rotation axis extends through the second portion, and the first and second rotation axes are substantially parallel to each other, a second link, which has a third portion and a fourth portion opposite the third portion, wherein the third portion is configured to be rotatably connected to the second portion and to cause the second link to pivot about the second rotation axis relative to the first link by a second rotation angle, and a carrier head, which is configured to be connected to the fourth portion and to hold and process a substrate.

[0015] According to one aspect, the first rotation angle is at least about 270 degrees in a single direction.

[0016] According to yet another aspect, the carrier head is configured to provide pressure to the substrate to allow the substrate to be processed by the platen.

[0017] According to another aspect, the system is configured to linearly move the carrier head toward the center of the platen based at least in part on synchronized rotation of the first link and the second link.

[0018] According to yet another aspect, the system further includes at least one platen configured to process a substrate held by the carrier head.

[0019] According to another aspect, at least two substrate carrier head systems according to one embodiment are disclosed, wherein each system further comprises at least two elongated members and at least two carrier heads and at least two platens configured to process at least four substrates handled by each carrier head, wherein the first rotation angle is at least approximately 270 degrees in a single direction.

[0020] According to yet another aspect, a second platen is disclosed wherein the at least one elongated member is configured to move a substrate from a first position that enables a first process to be performed on the substrate on the first platen to a second position that enables a second process to be performed on the substrate on the second platen.

[0021] According to yet another embodiment, a chemical mechanical planarization apparatus is disclosed, comprising at least a first substrate carrier head system and a second substrate carrier head system, each carrier head system comprising a support, wherein a rotation axis extends through the support, at least one elongated member comprising a first portion and a second portion opposite the first portion, wherein the first portion is configured to be rotatably connected to the support and to pivot the elongated member about the rotation axis through a rotation angle relative to the support, and a carrier head configured to be connected to the second portion and to hold and process a substrate; and at least one platen configured to process a first substrate held by the first carrier head system and a second substrate held by the second carrier head system.

[0022] According to one aspect, the angle of rotation is at least about 270 degrees in a single direction.

[0023] According to another aspect, the angle of rotation is substantially unrestricted in a single direction.

[0024] According to yet another aspect, a controller is disclosed that is configured to cause a first carrier head system to move a first substrate from a first position for performing a first process on the first substrate on a first platen to a second position for performing a second process on a second substrate on a second platen.

[0025] According to another aspect, the first and second processes are different.

[0026] According to yet another aspect, a controller is disclosed that is configured to place a first substrate carrier head system in an offline state while a second substrate carrier head system remains in a processing state.

[0027] According to another aspect, the controller is configured to cause the first or second carrier head system to replace a polishing pad of at least one platen. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other objects, features and advantages of the disclosed technology will be better understood through the following illustrative and non-limiting detailed description of embodiments of the disclosed technology with reference to the accompanying drawings. In the accompanying drawings, similar reference numerals will be used for similar elements unless otherwise specified.

[0029] Figure 1A is a plan view of a chemical mechanical planarization (CMP) system according to an embodiment of the disclosed technology.

[0030] Figure 1Bis a side view of a CMP system according to an embodiment of the disclosed technology.

[0031] Figure 2 is a cross-sectional view of an example carrier head assembly for a CMP system.

[0032] Figure 3A and 3B is a plan view of a CMP apparatus including a connecting rod according to an embodiment of the disclosed technology.

[0033] Figure 4 is a plan view of a CMP system including a platen according to an embodiment of the disclosed technology.

[0034] Figure 5 is an isometric view of an example CMP system according to an embodiment of the disclosed technology.

[0035] Figure 6 is a flow chart illustrating an example method for operating a CMP system according to an embodiment of the disclosed technology. DETAILED DESCRIPTION

[0036] The disclosed technology relates to a CMP machine having a smaller footprint than a typical CMP machine and having operational capabilities that allow the machine to process and manipulate wafer objects in a compressed space. The disclosed technology also relates to a CMP machine having an articulated arm having an elbow joint and a shoulder connected to a support. The disclosed technology also relates to a CMP machine having the operational capability to polish two or more wafers on a single polishing platen in a staggered polishing process so that the critical time period for polishing the wafer is not interrupted or interfered with by the polishing of subsequent wafers. The disclosed technology also relates to improved offline consumable preparation by providing a system that can efficiently remove the platen pad and replace it with a pre-treated platen pad without causing machine downtime (because it involves utilizing other platens within the system).

[0037] A machine with a radically different construction is needed to address some of the needs of today's market. Available machine types today, and their respective drawbacks, include machines that suffer from reduced throughput due to the necessity to perform wafer handling and loading / unloading sequentially within the processing steps, machines that can only process a single wafer per platen, machines that require one or more wafer carriers to be moved simultaneously with all other carrier heads between polishing platens due to the fact that all other carrier heads are fixedly coupled to one another, machines that cannot use one platen while one or more wafer carriers are awaiting processing and / or wafer loading / unloading operations are being completed on other carrier heads and / or platens, and machines that require wafers to be transferred from one wafer carrier to another in order to process wafers between multiple platens.

[0038] The disclosed technology will be described with respect to specific embodiments and with reference to certain accompanying drawings. The present disclosure is not limited thereto but is limited solely by the appended claims. The drawings described are illustrative only and non-limiting. In the drawings, the dimensions of some elements may be exaggerated and not drawn to scale for illustrative purposes. Dimensions and relative sizes do not necessarily correspond to actual reductions in the practice of the present invention.

[0039] The use of chemical mechanical polishing (CMP) to planarize thin films during the manufacture of semiconductor ICs, MEMS devices, and LEDs, as well as many other similar applications, is common among all companies that manufacture the "chips" for such devices. This use includes the manufacture of chips for mobile phones, tablets and other portable devices, as well as desktop and laptop computers. The growth of nanotechnology and micromachining offers great prospects for the widespread use and adaptation of digital devices in the medical field, the automotive field, and the Internet of Things ("IoT"). Chemical mechanical polishing for thin film planarization was invented and developed by scientists and engineers at IBM in the early 1980s. Today, this process is commonplace worldwide and is one of the truly enabling technologies in the manufacture of almost all digital devices.

[0040] Integrated circuits are fabricated using multiple, alternating layers of conductive materials (copper, tungsten, aluminum, etc.), insulating layers (silicon dioxide, silicon nitride, etc.), and semiconductor materials (polysilicon). Successive combinations of these layers are applied sequentially to the wafer surface, but as devices are implanted on the surface, topographical fluctuations form in the device structure, as with the silicon dioxide insulator layer. These undesirable topographical fluctuations must be smoothed out, or "planarized," before the next layer can be deposited. In the case of copper layers, copper is deposited on the surface to fill contact vias and form efficient vertical pathways for electrons to transfer from one device to another and from one layer to another. This process continues with each layer applied (usually through a deposition process). In the case of multiple layers of conductive material (multilayer metallization), this can result in extensive polishing steps (polishing each layer of conductor, insulator, and semiconductor material) to achieve a successful circuit.

[0041] CMP processing is the enabling technology that makes this possible in the manufacture of multi-layer circuits.

[0042] Detailed embodiments of the disclosed technology will now be described with reference to the accompanying drawings.

[0043] Figure 1AA plan view of an embodiment of a chemical mechanical planarization (CMP) system 100 is shown, which includes a support 102 (e.g., a body, column, base, polishing arm support, etc.), an arm 104 (e.g., an elongated member or polishing arm), and a carrier head 106. The arm 104 is attached to the support 102 and has the carrier head 106 attached. As discussed further below, the CMP system 100 may also include a device for rotating the arm attachment (not shown). The support 102 is a structural support that is configured to hold the arm 104 and the carrier head 106 in position above one or more polishing platens (e.g., a polishing platen). Figure 4 and Figure 5 ). Additionally, the support 102 is configured to rotate an arm 104 that is rotatably attached to the support 102. In some embodiments, the support 102 or a portion thereof can rotate such that the arm 104 attached to the support 102 rotates about the support 102. Alternatively, the support 102 can be configured to be stationary while the arm 104 attached to the support 102 rotates about the support 102. Figure 1B FIG. 1 is a side view of the CMP system 100 .

[0044] In some embodiments, the support 102 is configured to provide electrical and fluid connections to the rest of the CMP system 100. Thus, the support 102 has electrical / electromechanical and fluid connections disposed within the support 102 and / or along the outer periphery of the support 102. The electrical connections are configured to transmit power and electrical signals to one or more components of the CMP system 100 and to receive electrical signals from the CMP system 100 as feedback. For example, the CMP system 100 may have wiring, such as an Ethernet connection and an electrical slip ring assembly, that can be fed into the bottom of the support 102 and reach various components of the CMP system 100. Additionally, fluid connections may be included and configured to provide various fluids (e.g., CMP slurry) to the CMP system 100. The fluid connections may provide air pressure and vacuum forces to the system.

[0045] In one embodiment, CMP system 100 can be configured to rotate about a rotational axis. Accordingly, support 102 includes a device for rotating arm 104 about the rotational axis. Support 102 can include, for example, a motor (e.g., a stepper motor, a brushless motor, a torque motor, etc.), mechanical gears, magnetic or rotary couplings, or any other device for generating rotational motion on arm 104 or support 102.

[0046] exist Figure 1A In the example of FIG, the axis of rotation passes through the support 102. The degree of rotation is given by Figure 1AThe θ symbol in is indicated. However, the direction of rotation can be in either direction (clockwise or counterclockwise). Furthermore, the arm 104 and carrier head 106 can rotate about the axis of rotation (i.e., winding or unwinding) by at least about 270° (i.e., an angular displacement ≥ 270°) in a single direction. In another embodiment, the rotation of the arm 104 about the axis of rotation can be continuous (i.e., unrestricted), and thus, the CMP system 100 can have an angular displacement of 360° or greater (i.e., ≥ 2π radians).

[0047] In addition, the carrier head 106, attached to the arm, can be actuated in a downward (i.e., lowering) and upward (i.e., raising) direction. Thus, the carrier head 106 can be lowered or raised based on the desired configuration for the CMP process. For example, in an elevated configuration, the carrier head 106 or the arm 104 can receive a control signal commanding the carrier head 106 to lower. The carrier head 106 can be lowered until it rests against a polishing pad (not shown) on a platen. For example, the carrier head 106 can press a wafer held beneath the base of the carrier head 106 against the polishing pad.

[0048] Figure 2 is a cross-sectional view of the carrier head 106. The carrier head 106 can include a membrane assembly 205 and a support base 280 to which the membrane assembly 205 is mounted. The support base 280 can be of any suitable construction configured to provide support for the membrane assembly. The support base 280 can attach and interface with the remainder of the carrier assembly 106 to the CMP system 100.

[0049] As shown, the membrane assembly 205 may include a support plate 210, an elastic membrane 220, a membrane clamp 230, and an external pressure ring 240. The support plate 210 may be of any suitable configuration for attaching the membrane assembly 205 to the support base 280. For example, the support plate 210 may be mounted to the support base 280 using one or more bolts or other suitable attachment elements. The support plate 210 may be mounted to the support base 280 at various locations, such as along the outer periphery of the support base 280.

[0050] The support plate 210 can be of any suitable configuration to support the elastic membrane 220. The elastic membrane 220 can be secured to the support plate 210 in a variety of different ways. The elastic membrane 220 can be secured to the support plate 210 before or after the support plate 210 is secured to the support base 280. The elastic membrane 220 can be secured to the support plate 210 using any one of a number of suitable different retaining elements, such as a membrane clamp 230. In some embodiments, the membrane clamp 230 can be spring-loaded. In other embodiments, the membrane clamp 230 can be securely fastened using a fastening mechanism (e.g., nuts and bolts, etc.).

[0051] The elastic membrane 220 can be fixed to the support plate 210 so that the membrane 220 can hold the wafer 270 against the polishing pad and process the wafer, for example, as described above with reference to FIG. Figure 1B The terms "substrate" and "wafer" are used interchangeably herein and include, for example, semiconductor or silicon wafers, flat panel displays, glass plates or magnetic disks, plastic workpieces, and other substantially rigid, flat, and thin workpieces of various shapes (e.g., round, square, rectangular, etc.) and sizes with which one or more embodiments of the apparatus and methods disclosed herein may be implemented.

[0052] The diaphragm 220 can have sufficient elasticity and flexibility so that, in combination with the polishing pad material and processing parameters, wafer cracking is reduced. The diaphragm 220 and the support plate 210 can be configured to allow air pressure between the diaphragm 220 and the support plate 210 and to press the diaphragm 220 against the wafer 270 during the CMP process. For example, a basic seal can be formed between the diaphragm 220 and the plate 210. The support plate 210 can be spaced apart from the diaphragm 220 to form a gap or cavity 260 between them. The cavity 260 can be formed when the diaphragm 220 is in a static (e.g., non-pressurized) state. In some embodiments, when the diaphragm 220 is in a static state, the diaphragm 220 rests on or near the plate 210, and the cavity 260 is formed when the diaphragm 220 expands (e.g., pressurized). During planarization, the cavity 260 can be redistributed and cause changes in the air pressure for the diaphragm 220 and therefore for the wafer 270. As shown in the figure, air pressure can be provided to the back side of diaphragm 220 by pneumatic channel 250. Pneumatic channel 250 can be arranged in support plate 210, or gas can be supplied by other structures. Pneumatic channel 250 can be modified differently according to application (for example, round tube, square tube, etc.). In certain embodiments, pneumatic channel can provide vacuum for holding wafer 270 to the following of membrane assembly. Diaphragm 220 can include holes to provide such vacuum and / or form positive pressure to disengage wafer 270 from diaphragm 220.

[0053] In some embodiments, the cavity 260 can be formed by spacing the diaphragm 220 from the support plate 210. For example, the support plate 210 can include a recessed interior to form the cavity. In the illustrated embodiment, the membrane assembly 205 can include an external pressure ring 240 to form the cavity 260. In other embodiments, the membrane assembly can be assembled without the pressure ring. For example, the diaphragm 220 can rest directly on the support plate 210 without the cavity 260 separating the diaphragm 220 from the support plate 210. In some embodiments, the membrane assembly can include one or more pressure rings 240 arranged in concentric circles.

[0054] In another embodiment, the diaphragm 220 used may be a multi-region diaphragm. For example, the diaphragm 220 may have grooves (e.g., notches) and / or raised portions of the diaphragm 220 that effectively isolate various regions of the diaphragm 220. In a non-limiting example, the grooves may be arranged as a series of concentric circles originating from the center of the diaphragm. In another example, the grooves and raised portions may be irregularly shaped (e.g., interconnected circles, non-circular notches, or a circular pattern dispersed across the diaphragm surface) to improve the pressure distribution applied to the wafer 370 when attached to the membrane assembly.

[0055] Diaphragm 220 can be flexible so that it conforms to the structure it surrounds. In some cases, diaphragm 220 can be convex. For example, diaphragm 220 can sag in the center. Diaphragm 220 can even be shaped like a cone so that a small area of diaphragm 220 will contact the wafer surface for finer polishing.

[0056] As described herein, the membrane material can be any elastomeric material suitable for planarization, and for example, is used in the carrier head for CMP processing. In certain embodiments, the membrane material can be a kind of in rubber or synthetic rubber material. The membrane material can also be a kind of in ethylene propylene diene monomer (M level) (EPDM) rubber or silicone. Alternatively, it can be one or more combinations of vinyl, rubber, silicone rubber, synthetic rubber, nitrile, thermoplastic elastomer, fluoroelastomer, hydrated acrylonitrile butadiene rubber or polyurethane and polyurethane form.

[0057] One or more membrane assemblies can be implemented in a single CMP system.The CMP system can have controls (eg, variable speed motor controls, etc.) that operate simultaneously with feedback from the system to more precisely control the CMP process.

[0058] In some embodiments, reference Figure 1A 、 Figure 1B and Figure 2 One or more arms of the described CMP systems can bend or rotate about a second axis of rotation so that the carrier head can be rolled inwardly, toward the support, and / or outwardly, away from the support. In some cases, the elongated arm can include multiple links (i.e., articulated or articulated arms) that can all rotate about various axes of rotation.

[0059] Figure 3A and Figure 3B A plan view of an embodiment of a chemical mechanical planarization (CMP) system 300 is shown including a connecting rod 304 and a connecting rod 306. Figures 1A-1B and Figure 2However, the CMP system 300 differs in that one or more arms can bend or rotate about a second axis of rotation so that the carrier head 308 can be moved as shown in FIG. Figure 3B Rolled inwardly, toward the support, as shown, or as Figure 3A For example, CMP system 300 may include a first link 304 attached to support 302, a second link 306 attached to first link 304, and a carrier head 308 attached to second link 306. In a non-limiting example, the links may be joined at a central joint (i.e., an elbow).

[0060] In some embodiments, the first link 304 is rotatably attached to the support 302 and defines a first axis of rotation passing through the support 302. Additionally, the first link 304 can be rotatably attached to the second link 306, thereby defining a second axis of rotation passing through the attachment area between the links. Alternatively, the first link 304 may not be configured to rotate, and only the second link 306 may be configured to rotate about the second axis of rotation. The attachment portion includes a means for rotating the second link about the second axis of rotation, the means including a reference Figures 1A-1B Similar features as described. Figures 1A-1B As mentioned above, electrical and fluid connections may also be included throughout the connecting rod.

[0061] Therefore, the connecting rod comprising the first connecting rod 304 and / or the second connecting rod 306 can be configured to rotate around their respective rotation axes (i.e., the first rotation axis, the second rotation axis, etc.). For example, the second connecting rod 306 can be configured to rotate around the second rotation axis passing through the connecting rod attachment portion. In some embodiments, the second connecting rod 306 can be configured to rotate around the second rotation axis so that the second connecting rod 306 extends outward to form a straight line with the other connecting rod and the first rotation axis. In other embodiments, the second connecting rod 306 can rotate between 0 ° and 180 ° and between 180 ° and 270 ° and between 270 ° and 360 ° around the second rotation axis. For example, the second connecting rod 306 can rotate around the second rotation axis in a substantially unrestricted manner.

[0062] In some embodiments, the links can rotate independently of the other links in the link chain and independently of the support 302. In other embodiments, certain links can be coupled together so that their movement is dependent on the movement of another link or the movement of the support 302. For example, one or more links and the support 302 can be coupled together by rotating gears or magnets so that when the support or another link rotates, the coupled links or supports also move.

[0063] Furthermore, the CMP system may include multiple supports, wherein one or more arms are attached to each support. For example, each support may have two arms. Furthermore, each arm may include a reference Figures 3A-3B In addition, multiple platens can be arranged near each support member. For example, two platens can be located between two supports so that each carrier head of the two supports can approach each platen for CMP processing. Figure 4 As shown, in another example, a single platen can be configured to be proximate to two supports, with each carrier head configured to be accessible to the platen for processing.

[0064] In some embodiments, the wafer is delivered to a designated loading station (not shown) and prepared for loading onto the carrier head 308. Wafer transfer from the equipment front end module (EFEM) to the load / unload station is accomplished via, for example, an overhead gantry robotic mechanism.

[0065] The carrier head 308 is positioned concentrically with and above a load / unload stage (not shown) and transfers wafers from the stage to the carrier head 106. Those skilled in the art will appreciate various methods and apparatus for loading and unloading wafers onto a carrier head.

[0066] As shown, the carrier head 308 is positioned above the platen to perform the polishing process. While the polishing process is in progress, the next wafer can be placed on a loading / unloading station (not shown) for subsequent processing. Once the polishing process is completed, the links 304 and 306 supporting the carrier 308 and the elbows (i.e., joints) between the links can be articulated so that the carrier head 308 is "retracted" toward the support 302 (e.g., from the support 302). Figures 3A to 3B ) thereby allowing the carrier to rotate about the support 302 within a smaller spatial envelope than would otherwise be the case. This allows the carrier head 308 to be positioned concentrically and above the unloading station.

[0067] The carrier head 308 may then be rotatably positioned back into position for transferring a subsequent wafer from the load station to the carrier 308 , which may then be positioned for processing on the platen.

[0068] The processed wafers can then be unloaded onto an unloading station and retrieved by a transfer robot for return to the EFEM, or more commonly, to a cleaning system.

[0069] To increase system productivity, the same sequence can be applied to corresponding component groups located symmetrically opposite the platen so that the carrier 308 is being processed on the platen while wafers are being loaded onto or unloaded from the second carrier head using an additional loading and unloading station.

[0070] Figure 4 An example embodiment of a CMP system 400 is shown that is similar to the previously described CMP systems 300 and 100 and includes a platen 414 configured to process substrates held by each of the carrier heads 410 and 412. In some embodiments, arms 406 and 408 are substantially similar to arm 104. Alternatively, arms 406 and 408 may include a substrate such as that shown in FIG. Figures 3A-3B 304 and 306. Additionally, carrier heads 410 and 412 can be substantially similar to carrier heads 106 or 308, and supports 404 and 402 can be substantially similar to supports 102 or 302. In the illustrative example, platen 414 can be configured in any number of shapes (e.g., circular, square, etc.) and thus will have a center. Figure 4 In the example shown, platen 414 is a circle having a center 416. Additionally, CMP system 400 can be configured with any number of platens, where, for example, each platen or a pair of adjacent platens has a plurality of corresponding supports.

[0071] Additionally, each of arms 406 and 408 can rotate about their respective rotational axes passing through each of supports 402 and 404. Furthermore, each arm can be configured to rotate about its respective rotational axis at an angular displacement of 270° or greater. In some cases, arms 406 and / or 402 can be configured to rotate about their respective rotational axes in a substantially unrestricted manner.

[0072] In some embodiments, the CMP system 400 may include one or more stages for loading wafer objects onto and / or unloading wafer objects from one or more carrier heads. For example, each carrier head may have a dedicated loading stage and / or unloading stage for loading wafers onto or unloading wafers from the carrier head. Two or more carrier heads may have a common loading / unloading stage relative to each other for processing on the same or different platens. In addition, each stage may be positioned at approximately the same radial distance from each of the supports 404 and 402. Alternatively, each stage may be located at a different radial distance from each of the supports 404 and 402. Each stage may be positioned at the same or a different radial distance from the supports relative to the other stages. Thus, in Figure 4 In embodiments where one or more of the arms include a linkage, the arms may be articulated to achieve various configurations of the various stages and provide greater flexibility in different configurations and positions of the various supports.

[0073] Therefore, multiple wafers can be processed on a common platen. In some applications, it is desirable to increase production relative to processing a single wafer on a single platen. In a non-limiting example, two or more wafers can be loaded onto carrier heads 410 and 412. Loading can be performed on a loading station (not shown). In addition, there may be an unloading station, which in some examples has a different structure from the loading station. Both carrier heads 410 and 412 can be located above platen 414 (as shown) so that two wafers can be processed substantially at the same time. Once the processing of the two wafers is completed, the carrier is placed on a suitable station (not shown) for unloading and then placed on a suitable loading station (not shown) for loading additional wafers onto carriers 410 and 412 for subsequent processing. Alternatively, the carrier heads can alternate or stagger their respective wafers. For example, carrier head 410 can process the first wafer on platen 414 for a specified amount of time or for a specific percentage of the entire process. At the same time, carrier head 412 can be configured in a raised position so that carrier head 412 does not press against platen 412 and process the second wafer resting on platen 412 until a control signal is received to lower its head. When carrier head 412 receives a control signal to lower its head, carrier head 410 can receive a control signal to raise its head so that the first wafer is no longer processed. Alternatively, carrier head 410 can maintain its head downward so that both carrier heads can process simultaneously.

[0074] In addition, about Figures 1A-1B 、 Figure 2 , Figure 3 or Figure 4 The described CMP system can be implemented in many different combinations, for example Figure 5 For example, Figure 5 A CMP apparatus 500 is shown that includes a first CMP system 520 and a second CMP system 530. In the illustrated embodiment, each CMP system includes two arms with connecting rods and two platens. Thus, each platen is configured to process one or more wafers from each CMP system.

[0075] exist Figure 5 In the exemplary embodiment of FIG. 5 , CMP systems 520 and 530 have two arms with connecting rods. Although shown Figure 5 The CMP systems 520 and 530 have arms that include linkages, but it should be understood that the system can be configured with one or more arms that do not have linkages, as described with reference to FIG. 1 and FIG. Figure 4Furthermore, CMP systems 520 and 530 may have any number of arms extending from their respective supports. Furthermore, CMP apparatus 500 may have any number of platens. In some embodiments, both arms attached to a single support may rotate about a common axis of rotation at substantially the same time and in the same direction relative to one another, such that they shift positions relative to one another.

[0076] Additionally, as shown, CMP systems 520 and 530 can be equipped with a controller 510. Alternatively, controller 510 can be located within the CMP system (e.g., within a support for CMP system 520 and / or 530). Additionally, controller 510 can be an electronic controller, mechanical, pneumatic, or a combination thereof. Additionally, any of the apparatus and systems described herein can include a controller (e.g., Figure 5 Controller 510) which can be configured to provide the functionality of the methods described herein as well as additional functionality. Additionally, any of the apparatus and systems described herein can include a device for tracking the direction and angular displacement of the CMP carrier head (e.g., an absolute encoder, etc.). Additionally, any of the apparatus and systems described herein can include a platen having a polishing pad configured to rotate or spin. Additionally, among other things, any of the apparatus and systems described herein can include a carrier head configured to rotate or spin. For example, a carrier head holding a wafer can cause the wafer to spin while processing the wafer against a spinning platen.

[0077] In addition, the above-mentioned wafer carrier attached to the outside of the outer link (or arm, if there is no link) provides pressure to the wafer being processed. The wafer carrier head can be lowered toward the platen and raised away from the platen depending on the required operation. The wafer carrier is also configured to support loading and unloading operations of the wafer before and after CMP processing. The carrier head is also configured to move linearly (or radially if the platen is circular) toward the center of the platen (as described above with respect to center 416) due to the synchronous rotational motion of the two links. For example, the carrier head can press the wafer against an area of the platen. The controller can then command the two links to rotate in a synchronous motion so that the wafer moves toward the center of the platen. In addition, the carrier head is also configured to vibrate inward and outward along a line or radius.

[0078] In addition, each platen can include a pad conditioner system (shown but not numbered). The pad conditioner can sweep across the entire polishing platen or any portion thereof. The pad conditioner can be configured to condition the pad before, during, and / or after polishing the wafer.

[0079] In another embodiment, in a system having at least two CMP carrier head systems, the CMP controller can also be configured to control either carrier head system to replace the polishing pad (e.g., a consumable) of the first platen. In such an embodiment, the second carrier head system can continue to process wafers on the second platen while the first platen is temporarily offline. For example, the polishing pad can be prepared offline or pre-conditioned (i.e., away from the CMP processing station). The controller can place the first carrier head system in an offline state (e.g., in a state where the first carrier head is not processing wafers, such as in maintenance or repair mode). The second carrier head system can continue in a processing state. Therefore, the controller can command the first carrier head system to attach the pre-conditioned polishing pad to the system. In some embodiments, such attachment will require removing the carrier head so that the pre-conditioned polishing pad can be attached in its place. In other embodiments, it may be necessary to install a separate accessory in place of the carrier head so that the pre-conditioned polishing pad can be attached to the separate accessory.

[0080] In some embodiments, the CMP system 500 can be configured to advantageously stagger the processing of multiple wafers on multiple platens. For example, the CMP system can include a first carrier head system and a second carrier head system, each of which has a first arm and a second arm. In addition, each arm has a carrier head attached to one end.

[0081] A first carrier head system can process a first wafer on a first platen using a first arm, while a second carrier head system processes a second wafer on a second platen using a second arm. Once the first wafer has been processed for a predetermined amount of time or a predetermined percentage of the total processing (e.g., 80% processed), the first arm can rotate to move the first wafer to the second platen for a second CMP process. In some embodiments, the first and second CMP processes are different. For example, the first process can be a bulk removal process, while the second process can be a fine removal process, wherein the bulk removal process removes more material from the wafer than the fine removal process. For example, in some embodiments, for the entire process, the bulk removal process removes 80% of the total material removed from the wafer, and the fine removal process removes 20%. Alternatively, the second wafer can continue to be processed at the second platen. Concurrently, once the first wafer has been removed, a third wafer can be loaded and processed on the first platen using the second arm of the first carrier head system, and the process can repeat itself for subsequent wafer processing.

[0082] Figure 6 FIGURE 6 is a flow chart illustrating an example method 600 for operating a CMP system according to certain embodiments disclosed herein. In some aspects, the method 600 may be performed by Figures 1A-1B In some aspects, the method 600 may be performed by the system 100. Figures 3A-3BIn some aspects, the method 600 may be performed by the system 300. Figure 4 In some aspects, the method 600 may be performed by the system 400. Figure 5 The system 500 or other system is executed.

[0083] In block 610, a CMP system for processing a wafer is provided. The CMP system includes an elongated arm rotatably attached to a support. In block 620, the arm is rotated from a first position to a second position. The rotation from the first position to the second position produces an angular displacement greater than 270°.

[0084] Thus, the present disclosure improves the yield of processing a single wafer on a single platen by enabling simultaneous processing of one wafer while loading and unloading consecutive wafers, wherein two wafers are processed sequentially on the same platen. Additionally, the present disclosure improves the yield of processing two wafers on a single platen by enabling simultaneous processing of two wafers while loading and unloading consecutive wafers, wherein two wafers are processed on the same platen. Furthermore, the disclosed technology is configured to produce a duty cycle of approximately 100% for the entire system. For example, as a result of the configurations and embodiments described herein, the system may have almost no downtime in processing wafers. Furthermore, the disclosed technology is configured to reduce the footprint of each CMP system (i.e., the support and arm) and the entire system as a whole.

[0085] Many variations and modifications may be made to the above-described embodiments, and the elements of these embodiments should be understood to belong to other acceptable examples. All such modifications and variations are intended to be included within the scope of the present disclosure. The foregoing description details certain embodiments. However, it should be understood that, no matter how detailed the foregoing appears in the text, the disclosed systems and methods can be implemented in many ways and can be implemented in other forms. As described above, it should be noted that when describing certain features or aspects of the disclosed systems and methods, the use of a specific term does not mean that the term is redefined to be limited to including any specific features associated with the term that are features or aspects of the disclosed systems and methods.

[0086] Unless expressly stated otherwise, or otherwise understood in the context of use, conditional language, such as "can," "may," "might," or "could," and other equivalent expressions, is generally intended to convey that certain embodiments include certain features, elements, and / or steps, but other embodiments do not. Thus, such conditional language is generally not intended to imply that one or more embodiments in any way require the features, elements, and / or steps, or that one or more embodiments must include logic for determining (with or without user input or prompting) whether the features, elements, and / or steps are included in or performed in any particular embodiment.

[0087] Unless expressly stated otherwise, conjunctions such as the phrase "at least one of X, Y, and Z" or "at least one of X, Y, or Z" should generally be used in context to convey that an item, term, or the like may be X, Y, or Z, or a combination thereof. For example, the term "or" is used in its inclusive sense (rather than its exclusive sense) so that, for example, when used to connect a list of elements, the term "or" means one, some, or all of the elements in the list of elements. Thus, such conjunctions are generally not intended to imply that certain embodiments require the presence of at least one of X, at least one of Y, and at least one of Z.

[0088] In addition, the terms first, second, third, etc. in the description and claims are used to distinguish similar elements and not necessarily to describe a sequential or chronological order. These terms are interchangeable under appropriate circumstances, and the embodiments of the present disclosure can operate in other sequences than those described or illustrated herein.

[0089] Furthermore, the terms top, bottom, over, under, etc. in the description and claims are used for descriptive purposes and not necessarily for describing relative positions. The terms so used are interchangeable under appropriate circumstances, and the embodiments of the disclosure described herein can operate in other orientations than described or illustrated herein.

[0090] As used herein, the terms "a" and "an" should be interpreted as inclusive rather than exclusive. For example, unless otherwise specified, the terms "a" and "an" should not be understood to mean "exactly one" or "one and only one"; on the contrary, whether used in the claims or elsewhere in the specification, the terms "a" and "an" mean "one or more" or "at least one", and are independent of the use of quantifiers such as "at least one", "one or more", or "a plurality" in the claims or elsewhere in the specification.

[0091] As used herein, the term "comprising" should be interpreted as inclusive rather than exclusive. For example, a general-purpose computer comprising one or more processors should not be interpreted as excluding other computer components and may include such components as memory, input / output devices and / or network interfaces, among other devices.

[0092] Although the above detailed description has shown, described and pointed out the novel features applied to various embodiments, it will be understood that various omissions, substitutions and changes in the form and details of the devices or processes shown may be made without departing from the spirit of the present disclosure. It will be recognized that because certain features can be used or implemented separately from other features, certain embodiments of the disclosed technology described herein may be implemented in a form that does not provide all of the features and advantages set forth herein. The scope of certain aspects of the technology disclosed herein is indicated by the appended claims rather than the foregoing description. All changes that come within the meaning and range of equivalence of the claims are intended to be included within the scope of the claims.

Claims

1. A substrate carrier head system comprising: a support member, wherein the axis of rotation extends through the support member; at least one elongated member comprising a first portion and a second portion opposite the first portion, wherein the first portion is configured to be rotatably coupled to the support and to pivot the elongated member about the rotational axis relative to the support through a rotational angle of at least approximately 270 degrees in a single direction; and A carrier head is configured to couple to the second portion and to hold and process a substrate.

2. The system according to claim 1, wherein: The rotation angle is substantially unrestricted in a single direction.

3. The system according to any one of claims 1 and 2, wherein: The carrier head includes a diaphragm configured to be pressurized to allow a substrate to contact and be processed by a polishing pad on a platen.

4. The system according to any one of claims 1 to 3, further comprising: A controller is configured to cause the carrier head to move the substrate from a first position that enables a first process to be performed on the substrate on a first platen to a second position that enables a second process to be performed on the substrate on a second platen.

5. The system according to claim 4, wherein: The first processing and the second processing are different.

6. The system according to claim 5, wherein: The first machining is a bulk removal machining, and the second machining is a fine removal machining.

7. A substrate carrier head system comprising: at least one support member, wherein the first axis of rotation extends through the support member; At least one elongated member comprising: a first link having a first portion and a second portion opposite the first portion, wherein the first portion is configured to be rotatably connected to the support and to pivot the first link about the first rotational axis relative to the support by a first rotational angle, and wherein a second rotational axis extends through the second portion, the first rotational axis and the second rotational axis being substantially parallel with respect to each other; and a second link having a third portion and a fourth portion opposite the third portion, wherein the third portion is configured to be rotatably connected to the second portion and to pivot the second link relative to the first link about the second rotation axis by a second angle; and A carrier head is configured to connect to the fourth portion and to hold and process a substrate.

8. The system according to claim 7, wherein: The first rotation angle is at least about 270 degrees in a single direction.

9. The system according to any one of claims 1 to 7, wherein: The carrier head is configured to provide pressure to a substrate to allow the substrate to be processed by the platen.

10. The system according to any one of claims 7 and 8, wherein The system is configured to linearly move the carrier head toward a center of a platen based at least in part on synchronized rotation of the first link and the second link.

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