Measurement method of biosensor based on two-dimensional micro field effect transistor electrode

Abstract

The invention discloses a biosensor measuring method based on a two-dimensional miniature field effect transistor electrode. The method comprises the following steps: firstly, cleaning the sensor with acetone / isopropanol / deionized water, and annealing in argon environments of 150 DEG C and 180 DEG C to reduce contact resistance; then, through oxygen plasma surface activation, APTES amination and glutaraldehyde crosslinking, the antibody is fixed on the surface of the aluminum oxide protection layer; bSA sealing is adopted to reduce non-specific adsorption; and finally measuring electric signal response by using a source meter under the condition of control voltage. The method is standard in process and clear in parameter, and the detection sensitivity, specificity and repeatability are remarkably improved.

Description

Technical Field

[0001] This invention relates to biosensor technology and semiconductor micro-nanofabrication, specifically a biosensor measurement method based on two-dimensional micro-field-effect transistor (FET) electrodes. This method integrates micro- and nanoscale electrode fabrication processes with biofunctionalization techniques and can be used for high-sensitivity, on-site analysis and online monitoring of biomolecule detection. Background Art

[0002] With the rapid development of electronic devices and bioassay technologies, field-effect transistor (FET)-based biosensors have become a research hotspot in the field of biomolecule detection due to their high sensitivity, low power consumption, and on-site detection capabilities. Traditional micro-FET electrode preparation technology mainly focuses on the optimization of electrode structure and the selection of semiconductor materials. However, there is still a lack of systematic specifications for the overall process of sensors after electrode preparation, especially from pre-treatment to biomolecule functionalization and then to electrical measurement. Specifically, existing technologies usually carry out annealing, surface chemical modification, antibody immobilization, blocking treatment, and electrical measurement separately, lacking unified process and parameter standards. As a result, it is difficult to ensure the repeatability, specificity, and sensitivity of detection results under different laboratory or equipment conditions.

[0003] In order to address the shortcomings of existing FET biosensor measurement methods, on the one hand, it is necessary to optimize the metal electrode contact performance during the sensor annealing stage to reduce the contact resistance; on the other hand, during the biofunctionalization process, key steps such as surface activation, amination, cross-linker preparation, and antibody immobilization need to be strictly controlled to ensure the efficiency and specificity of antibody-antigen binding. In addition, in the electrical signal measurement link, common problems such as noise interference, contact resistance fluctuations, and membrane integrity will directly affect the stability and accuracy of the detection. Existing technologies rarely integrate and optimize the key parameters of each step from the overall process, making it difficult to meet the actual needs of high sensitivity, low noise, and repeatable detection.

[0004] In order to solve the above technical problems, it is urgent to propose an integrated measurement method, which not only includes sensor pretreatment and annealing processes, but also systematically standardizes the parameters and operation procedures of each link of surface activation, amination, glutaraldehyde cross-linking, antibody fixation, blocking treatment, antigen binding and electrical signal measurement, so as to achieve comprehensive control of the biological detection measurement process after the preparation of the two-dimensional micro field-effect transistor electrode, thereby improving the detection sensitivity, specificity and repeatability of the sensor. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a biosensor measurement method for two-dimensional micro field-effect transistor electrodes, which can systematize and standardize the key parameters and operating procedures of each link such as sensor annealing, surface activation, amination, glutaraldehyde cross-linking, antibody fixation, sealing treatment and electrical signal detection, so as to overcome the shortcomings of the existing technology such as scattered measurement steps, inconsistent parameters, large detection noise and poor repeatability, thereby achieving high-sensitivity, low-noise and repeatable biomolecule detection.

[0006] The technical solution adopted by the present invention to solve the technical problem is: a measurement method of a biosensor based on a two-dimensional micro field-effect transistor electrode, comprising the following steps: T1. Sensor pretreatment: Remove the required number of sensor chips from the substrate holder and ultrasonically clean them using acetone, isopropyl alcohol, and deionized water for 5 minutes, followed by drying with an N2 air gun. T2, sensor annealing: Place the cleaned sensor on a hot plate and anneal at 150°C for 45 minutes to reduce the metal electrode contact resistance. Anneal at 180°C for 1.5 hours in a flowing argon environment with a flow rate of 200 sccm to further optimize the electrode contact performance. T3. Surface activation and amination: T3-1. Place the annealed sensor in an oxygen plasma treatment chamber for surface activation. Conditions: power 50 W, time 2 minutes, oxygen flow rate 20 sccm; T3-2, immerse the activated sensor in ethanol solution containing 2.5% APTES and shake for 1 hour; T3-3. Wash the sensor three times with pure ethanol to remove residual APTES, and blow dry with nitrogen; T4, glutaraldehyde cross-linking: T4-1, immerse the amination-treated sensor in 5% glutaraldehyde aqueous solution and react for 1 hour; T4-2, wash three times with deionized water and blow dry with nitrogen; T4-3. Place the sensor in a humidified environment in a culture dish to prepare for antibody fixation. T5. Antibody fixation and post-processing: T5-1. Add 3 μL of 100 μg / mL antibody solution to the surface of the sensor area and let it stand overnight at 4°C to complete covalent fixation. T5-2, wash the sensor with pure PBS buffer for 5 minutes and blow dry with nitrogen gas; T5-3. Place the sensor in a humid environment and prepare for sealing. T6, non-specific site blocking: T6-1, prepare 2.5% BSA PBS blocking solution; T6-2. Add 3 μL of blocking solution to the sensing area and let it stand for 10-30 minutes; T6-3, wash three times with PBS buffer and blow dry with nitrogen gas; T7, Antigen binding reaction: Add 3 μL of serum solution containing antigen to the sensing area and let it stand at room temperature for 30 minutes to allow antibody-antigen specific binding; T8. Electrical signal detection: Use the Keysight source instrument measurement system to detect the sensor's electrical signal response under specific drain-source voltage and gate voltage conditions; The two-dimensional micro field-effect transistor electrode is prepared by the following steps: S1. Deposition of semiconductor materials, including ultrasonic cleaning of substrate, spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of semiconductor materials, removal of residual photoresist and deposition of materials; S2. Deposition of metal electrodes on semiconductor materials, including spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of titanium and gold, removal of residual photoresist and deposition materials; S3. Depositing an oxide layer on the metal electrode, including spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of aluminum oxide, removal of residual photoresist and deposition of materials.

[0007] The beneficial effect of the present invention is that it organically integrates and parameterizes the steps of annealing, surface activation, amination, cross-linking fixation, sealing treatment and electrical detection of two-dimensional micro FET electrodes, significantly reduces the electrode contact resistance, enhances the efficiency and specificity of antibody fixation, effectively inhibits nonspecific adsorption, and improves the signal-to-noise ratio; at the same time, through unified operating procedures and key parameter specifications, it improves the repeatability and scalability of detection, and reduces noise in links such as argon annealing and Faraday shielding box measurement, thereby achieving high-sensitivity, low-noise biological molecule detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] The present invention will be further described below with reference to the accompanying drawings and examples.

[0009] Figure 1 It is a schematic diagram of the material composition and structure of the two-dimensional micro field effect transistor electrode of the present invention.

[0010] Figure 2 It is a schematic diagram of a semiconductor material deposition mask, a metal electrode deposition mask and an oxide layer deposition mask in the method for preparing a two-dimensional micro field effect transistor electrode of the present invention.

[0011] Figure 3 It is a schematic diagram of a two-dimensional micro field effect transistor electrode made by the preparation method of the two-dimensional micro field effect transistor electrode of the present invention. DETAILED DESCRIPTION

[0012] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0013] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0014] In addition, the terms "first", "second", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance. In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances. In addition, in the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0015] like Figures 1-3 As shown, the present invention provides a method for preparing a two-dimensional micro field effect transistor electrode, comprising the following steps: S0. Design and fabricate semiconductor material deposition masks, metal electrode deposition masks, and oxide layer deposition masks on chrome-coated glass substrates using a mask writing tool (UV IMP); S1. Deposition of semiconductor materials, including ultrasonic cleaning of substrate, spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of semiconductor materials, removal of residual photoresist and deposition of materials. S101, ultrasonically cleaning the silicon substrate or quartz substrate with piranha solution, isopropyl alcohol, and deionized water for 15 minutes, or ultrasonically cleaning the silicon substrate or quartz substrate with acetone, isopropyl alcohol, and deionized water for 15 minutes; S102. If the substrate is a silicon substrate, a 285 nm SiO2 layer is deposited on the silicon substrate using an electron beam evaporation tool to obtain a SiO2 / Si substrate. If the substrate is a quartz substrate, no SiO2 layer needs to be deposited. S103. Spin-coat hexamethyldisilazane and AZ1512HS photoresist onto a SiO2 / Si substrate or a quartz substrate; AZ1512HS is a positive photoresist commonly used in microelectronics manufacturing and microfabrication processes. It is one of a series of photoresists produced by AZ Electronic Materials, which has high resolution and good photosensitivity and is suitable for the generation of micron and submicron patterns. The characteristic of positive photoresist is that the areas exposed to light become soluble and can be removed by the development process. Photoresist is a key material used to make tiny patterns in photolithography technology. Through spin coating, exposure and development steps, photoresist can form precise patterns on the substrate. Use the following method to configure the spin coating machine: Procedure 1: Speed 300-600 (preferably 500), acceleration 100, time 15 seconds; Procedure 2: Speed 2500-3500 (preferably 3000), acceleration 500, time 60 seconds.

[0016] S104, coating a SiO2 / Si substrate or a quartz substrate with a positive photoresist, and baking the substrate at 110°C for 90 seconds using a hot plate; S105. Place the baked SiO2 / Si substrate or quartz substrate on a UV flood substrate holder, and place a semiconductor material deposition mask on the substrate for UV exposure. Set the UV exposure time according to the lamp intensity and the AZ photoresist data sheet, which is approximately between 10 and 18 seconds.

[0017] S106. Immerse the UV-exposed SiO2 / Si substrate or quartz substrate in AZ726 developer, shake for 60 seconds, rinse with deionized water for 20 seconds, and then dry with N2. Observe the pattern under an optical microscope to check that all patterns have been developed. If not, repeat the development process for 30 seconds and observe again under an optical microscope. AZ726 is a developer commonly used to develop positive photoresists, such as AZ1512HS. The developer chemically removes the UV-soluble portion of the photoresist, thereby forming the desired pattern on the substrate. AZ726 developer is suitable for high-resolution photolithography processes, providing excellent pattern clarity and line control during the development process.

[0018] S107, placing a patterned SiO2 / Si substrate or a quartz substrate in a deposition chamber, and using an electron beam evaporation tool to deposit a semiconductor material of 30-50 nanometers (preferably 45 nanometers) at a deposition rate of 0.1 Å (0.01 nm) / second, wherein the semiconductor material is Si; S108, immerse the SiO2 / Si substrate or quartz substrate in acetone solution for a few minutes, and use ultrasonic cleaning to remove the residual photoresist and unnecessary deposition materials on the substrate. After the peeling process, dry the substrate with N2 gas and heat it on a hot plate at 110℃ for 90 seconds to prepare for the following process. All electron beam evaporation deposition processes are carried out at 10⁻ 6 It is carried out under a Torr-level vacuum environment.

[0019] S2. Depositing metal electrodes on semiconductor materials, including spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of titanium and gold, and removal of residual photoresist and deposited materials; wherein: S201, depositing a semiconductor material prepared by spin coating hexamethyldisilazane and AZ1512HS photoresist on a SiO2 / Si substrate or a quartz substrate; configuring a spin coating machine in the following manner: Procedure 1: Speed 300-600 (preferably 500), acceleration 100, time 15 seconds; Procedure 2: Speed 2500-3500 (preferably 3000), acceleration 500, time 60 seconds.

[0020] S202, depositing the semiconductor material coated with the positive photoresist on a SiO2 / Si substrate or a quartz substrate, and baking it on a hot plate at 110°C for 90 seconds.

[0021] S203. Deposit the baked semiconductor material onto a SiO2 / Si substrate or a quartz substrate, place it on a UV floodlight substrate holder, and place a metal electrode deposition mask on top of the substrate for UV exposure. Set the UV exposure time according to the lamp intensity and the AZ photoresist data sheet, approximately between 10 and 18 seconds.

[0022] S204. Deposit the UV-exposed semiconductor material on a SiO2 / Si substrate or a quartz substrate and immerse it in an AZ726 developer, shake it for 60 seconds, wash it with deionized water for 20 seconds, and then dry it with N2, and observe the pattern; observe the pattern under an optical microscope to check whether all patterns have been developed. If not, repeat the development process for 30 seconds and observe it under an optical microscope again.

[0023] S205. Place the patterned SiO2 / Si substrate or quartz substrate in a deposition chamber, and use an electron beam evaporation tool to deposit a titanium metal layer and a gold metal layer at deposition rates of 0.5Å and 0.9Å / s, respectively; the thickness of the titanium metal layer is 7nm, and the thickness of the gold metal layer is 100nm.

[0024] S206. After depositing the metal electrode on the semiconductor material, immerse the deposited SiO2 / Si substrate or quartz substrate in an acetone solution for a few minutes, and use ultrasonic cleaning to remove the residual photoresist and unnecessary deposited materials on the substrate. After the peeling process, the substrate is dried with N2 gas and heated at 110°C for 90 seconds using a hot plate to prepare for the following process.

[0025] S3. Depositing an oxide layer on the metal electrode, including spin coating photoresist, UV exposure patterning, development, electron beam evaporation deposition of aluminum oxide, removal of residual photoresist and deposition material, wherein: S301. Spin-coat hexamethyldisilazane and AZ1512HS photoresist on a SiO2 / Si substrate or a quartz substrate. Configure the spin coater in the following manner: Procedure 1: Speed 300-600 (preferably 500), acceleration 100, time 15 seconds; Procedure 2: Speed 2500-3500 (preferably 3000), acceleration 500, time 60 seconds.

[0026] S302, coating a positive photoresist on a SiO2 / Si substrate or a quartz substrate, and baking the substrate on a hot plate at 110°C for 90 seconds; S303, placing the baked SiO2 / Si substrate or quartz substrate on a UV flood substrate holder, and placing an oxide layer deposition mask on the substrate for UV exposure; setting the UV exposure time according to the lamp intensity and the AZ photoresist data sheet, approximately between 10-18 seconds.

[0027] S304. Immerse the UV-exposed SiO2 / Si substrate or quartz substrate in AZ726 developer, shake for 60 seconds, wash with deionized water for 20 seconds, and then dry with N2, and observe the pattern; observe the pattern under an optical microscope to check whether all patterns have been developed. If not, repeat the development process for 30 seconds and observe under an optical microscope.

[0028] S305. Place the patterned SiO2 / Si substrate or quartz substrate in the chamber and deposit an aluminum oxide layer (Al2O3) at a deposition rate of 0.5 Å / s using an electron beam evaporation tool; the thickness of the aluminum oxide layer is 70 nm.

[0029] S306. After the oxide layer is deposited on the SiO2 / Si substrate or the quartz substrate, it is immersed in an acetone solution for a few minutes and ultrasonically cleaned to remove the residual photoresist and unnecessary deposited materials on the substrate. After the peeling process, the substrate is dried with N2 gas and heated at 110°C for 90 seconds using a hot plate.

[0030] To prevent process oxidation, the following steps are also included: S5. After depositing the semiconductor material, metal electrodes, and oxide layer, spin coat the substrate with AZ1512HS positive photoresist. Configure the spin coater in the following manner: Procedure 1: Speed 300-600 (preferably 500), acceleration 100, time 15 seconds; Procedure 2: Speed 2500-3500 (preferably 3000), acceleration 500, time 60 seconds.

[0031] The positive photoresist coated on the substrate is baked at 110 degrees for 90 seconds using a hot plate to prepare for the next cutting process.

[0032] S6. After completing step S5, the substrate is subjected to final cutting protection treatment: the substrate with the spin-coated protective layer is placed on a precision dicing machine for cutting to obtain a single-chip sensor and loaded onto a dedicated substrate holder.

[0033] The present application also provides a measurement method of a biosensor based on a two-dimensional micro field-effect transistor electrode, comprising the following steps: T1. Sensor pretreatment: Remove the required number of sensor chips from the substrate holder and ultrasonically clean them using acetone, isopropyl alcohol, and deionized water for 5 minutes, followed by drying with an N2 air gun. T2, sensor annealing: Place the cleaned sensor on a hot plate and anneal at 150°C for 45 minutes to reduce the metal electrode contact resistance. Anneal at 180°C for 1.5 hours in a flowing argon environment with a flow rate of 200 sccm to further optimize the electrode contact performance. T3. Surface activation and amination: T3-1. Place the annealed sensor in an oxygen plasma treatment chamber for surface activation. Conditions: power 50 W, time 2 minutes, oxygen flow rate 20 sccm; T3-2, immerse the activated sensor in an ethanol solution (95% ethanol + 5% deionized water) containing 2.5% APTES (3-aminopropyltriethoxysilane) and shake for 1 hour; T3-3. Wash the sensor three times with pure ethanol (5 minutes each time) to remove residual APTES, and blow dry with nitrogen gas. T4, glutaraldehyde cross-linking: T4-1, immerse the amination-treated sensor in 5% glutaraldehyde aqueous solution and react for 1 hour; T4-2, rinse with deionized water three times (5 minutes each time), and blow dry with nitrogen; T4-3. Place the sensor in a humidified environment in a culture dish to prepare for antibody fixation. T5. Antibody fixation and post-processing: T5-1. Add 3 μL of 100 μg / mL antibody solution to the surface of the sensor area and let it stand overnight at 4°C to complete covalent fixation. T5-2, wash the sensor with pure PBS buffer (pH 7.4) for 5 minutes and blow dry with nitrogen gas; T5-3. Place the sensor in a humid environment and prepare for sealing. T6, non-specific site blocking: T6-1, prepare 2.5% BSA (bovine serum albumin) PBS blocking solution; T6-2. Add 3 μL of blocking solution to the sensing area and let it stand for 10-30 minutes; T6-3, wash three times with PBS buffer (5 minutes each time), and blow dry with nitrogen gas; T7, Antigen binding reaction: Add 3 μL of serum solution containing antigen to the sensing area and let it stand at room temperature for 30 minutes to allow antibody-antigen specific binding; T8. Electrical signal detection: Use the Keysight source instrument measurement system to detect the sensor's electrical signal response under specific drain-source voltage and gate voltage conditions; The present application also provides an embodiment of a two-dimensional micro field-effect transistor electrode, comprising: Base material; A source electrode and a drain electrode are provided on the substrate material; The substrate material is SiO2 / Si substrate or quartz substrate; The source and drain are metal electrodes, including a titanium metal layer and a gold metal layer; An aluminum oxide layer is provided on the source and drain electrodes.

[0034] The thickness of the titanium metal layer is 6 nm, the thickness of the gold metal layer is 100 nm, and the thickness of the aluminum oxide layer is 75 nm.

[0035] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of these terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0036] With the above-described preferred embodiments of the present invention as a guide, and with reference to the above description, relevant personnel are fully capable of making various changes and modifications without departing from the technical scope of this invention. The technical scope of this invention is not limited to the contents of the specification and must be determined according to the scope of the claims.

Claims

1. A measurement method for a biosensor based on a two-dimensional micro field-effect transistor electrode, characterized in that: The following steps are involved: T1. Sensor pretreatment: Remove the required number of sensor chips from the substrate holder and ultrasonically clean them using acetone, isopropyl alcohol, and deionized water for 5 minutes, followed by drying with an N2 air gun. T2, sensor annealing: Place the cleaned sensor on a hot plate and anneal at 150°C for 45 minutes to reduce the metal electrode contact resistance. Anneal at 180°C for 1.5 hours in a flowing argon environment with a flow rate of 200 sccm to further optimize the electrode contact performance. T3. Surface activation and amination: T3-1. Place the annealed sensor in an oxygen plasma treatment chamber for surface activation. Conditions: power 50 W, time 2 minutes, oxygen flow rate 20 sccm; T3-2, immerse the activated sensor in ethanol solution containing 2.5% APTES and shake for 1 hour; T3-3. Wash the sensor three times with pure ethanol to remove residual APTES, and blow dry with nitrogen; T4, glutaraldehyde cross-linking: T4-1, immerse the amination-treated sensor in 5% glutaraldehyde aqueous solution and react for 1 hour; T4-2, wash three times with deionized water and blow dry with nitrogen; T4-3. Place the sensor in a humidified environment in a culture dish to prepare for antibody fixation. T5. Antibody fixation and post-processing: T5-1. Add 3 μL of 100 μg / mL antibody solution to the surface of the sensor area and let it stand overnight at 4°C to complete covalent fixation. T5-2, wash the sensor with pure PBS buffer for 5 minutes and blow dry with nitrogen gas; T5-3. Place the sensor in a humid environment and prepare for sealing. T6, non-specific site blocking: T6-1, prepare 2.5% BSA PBS blocking solution; T6-2. Add 3 μL of blocking solution to the sensing area and let it stand for 10-30 minutes; T6-3, wash three times with PBS buffer and blow dry with nitrogen gas; T7, Antigen binding reaction: Add 3 μL of serum solution containing antigen to the sensing area and let it stand at room temperature for 30 minutes to allow antibody-antigen specific binding; T8. Electrical signal detection: Use the Keysight source instrument measurement system to detect the sensor's electrical signal response under specific drain-source voltage and gate voltage conditions; The two-dimensional micro field-effect transistor electrode is prepared by the following steps: S1. Deposition of semiconductor materials, including ultrasonic cleaning of substrate, spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of semiconductor materials, removal of residual photoresist and deposition of materials; S2. Deposition of metal electrodes on semiconductor materials, including spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of titanium and gold, removal of residual photoresist and deposition materials; S3. Depositing an oxide layer on the metal electrode, including spin coating of photoresist, UV exposure patterning, development, electron beam evaporation deposition of aluminum oxide, removal of residual photoresist and deposition of materials.

2. The measuring method according to claim 1, wherein: The method further includes step S0, designing and manufacturing a semiconductor material deposition mask, a metal electrode deposition mask, and an oxide layer deposition mask on a chrome-plated glass substrate using a mask writing tool; The step S1 comprises: S101, ultrasonically cleaning the silicon substrate or quartz substrate with piranha solution, isopropyl alcohol, and deionized water for 15 minutes, or ultrasonically cleaning the silicon substrate or quartz substrate with acetone, isopropyl alcohol, and deionized water for 15 minutes; S102, if the substrate is a silicon substrate, depositing a 285 nm SiO2 layer on the silicon substrate using an electron beam evaporation tool to obtain a SiO2 / Si substrate; S103, spin-coating hexamethyldisilazane and AZ1512HS photoresist on a SiO2 / Si substrate or a quartz substrate; S104, coating a SiO2 / Si substrate or a quartz substrate with a positive photoresist, and baking the substrate at 110°C for 90 seconds using a hot plate; S105, placing the baked SiO2 / Si substrate or quartz substrate on a UV floodlight substrate holder, and placing a semiconductor material deposition mask on the substrate for ultraviolet exposure; S106, immersing the UV-exposed SiO2 / Si substrate or quartz substrate in AZ726 developer, shaking for 60 seconds, washing with deionized water for 20 seconds, and then drying with N2, and observing the pattern; S107, placing the patterned SiO2 / Si substrate or quartz substrate in a deposition chamber, and depositing 30-50 nm of semiconductor material at a deposition rate of 0.1 Å / s using an electron beam evaporation tool; S108, immersing the SiO2 / Si substrate or the quartz substrate in an acetone solution, and removing the residual photoresist and deposited material on the substrate by ultrasonic cleaning, drying the substrate and heating; All electron beam evaporation deposition processes are performed at 10⁻ 6 It is carried out under a Torr-level vacuum environment.

3. The measuring method according to claim 2, characterized in that The step S2 comprises: S201, depositing a semiconductor material prepared by spin-coating hexamethyldisilazane and AZ1512HS photoresist on a SiO2 / Si substrate or a quartz substrate; S202, depositing the semiconductor material coated with the positive photoresist on a SiO2 / Si substrate or a quartz substrate, and baking it on a hot plate at 110°C for 90 seconds; S203, depositing the baked semiconductor material on a SiO2 / Si substrate or a quartz substrate, placing the substrate on a UV floodlight substrate holder, and placing a metal electrode deposition mask on top of the substrate for ultraviolet exposure; S204, depositing the UV-exposed semiconductor material on a SiO2 / Si substrate or a quartz substrate and immersing it in an AZ726 developer, shaking it for 60 seconds, washing it with deionized water for 20 seconds, and then drying it with N2, and observing the pattern; S205, placing the patterned SiO2 / Si substrate or quartz substrate in a deposition chamber, and depositing a titanium metal layer and a gold metal layer using an electron beam evaporation tool at deposition rates of 0.5 Å and 0.9 Å / s, respectively; measuring the contact resistance of the deposited metal electrodes using a four-point probe method to ensure that the resistance value is within a preset range; S206. After depositing the metal electrode on the semiconductor material, immerse the deposited SiO2 / Si substrate or quartz substrate in an acetone solution, and use ultrasonic cleaning to remove the residual photoresist and deposited material on the substrate, dry the substrate and heat it.

4. The measuring method according to claim 3, characterized in that The step S3 comprises: S301, spin-coating hexamethyldisilazane and AZ1512HS photoresist on a SiO2 / Si substrate or a quartz substrate; S302, coating a positive photoresist on a SiO2 / Si substrate or a quartz substrate, and baking the substrate on a hot plate at 110°C for 90 seconds; S303, placing the baked SiO2 / Si substrate or quartz substrate on a UV flood substrate holder, and placing an oxide layer deposition mask on the substrate for ultraviolet exposure; S304, immersing the UV-exposed SiO2 / Si substrate or quartz substrate in AZ726 developer, shaking for 60 seconds, washing with deionized water for 20 seconds, and then drying with N2, and observing the pattern; S305, placing the patterned SiO2 / Si substrate or quartz substrate in the chamber, and depositing an aluminum oxide layer at a deposition rate of 0.5 Å / s using an electron beam evaporation tool; S306, after the oxide layer is deposited on the SiO2 / Si substrate or the quartz substrate, immerse it in an acetone solution, and use ultrasonic cleaning to remove the residual photoresist and deposited material on the substrate, dry the substrate and heat it.

5. The measuring method according to claim 4, characterized in that The following steps are also included: S5. After depositing the semiconductor material, metal electrode, and oxide layer, spin-coat AZ1512HS positive photoresist on the substrate and bake it on a hot plate at 110 degrees for 90 seconds. S6. After completing step S5, the substrate is subjected to final cutting protection treatment: the substrate with the spin-coated protective layer is placed on a precision dicing machine for cutting to obtain a single-chip sensor and loaded onto a dedicated substrate holder.

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