Semiconductor saturable absorber mirror packaging structure and method of integrated optical limiting material

Abstract

The invention discloses a semiconductor saturable absorber mirror packaging structure and method integrated with an optical limiting material. Comprising a heat sink, a semiconductor saturable absorber mirror and an optical limiting material composite layer, a step-shaped groove is formed in the top surface of the heat sink, a semiconductor saturable absorber mirror and an optical limiting material composite layer are sequentially arranged in the step-shaped groove from bottom to top, and the top surface of the optical limiting material composite layer is flush with the top surface of the heat sink; the optical limiting material composite layer comprises a transparent substrate and an optical limiting material film layer, and the optical limiting material film layer is in contact with the top surface of the semiconductor saturable absorption mirror; the stepped groove is formed by two orthogonal grooves, and the two grooves are respectively a first groove used for arranging a semiconductor saturable absorber mirror and a second groove used for arranging an optical limiting material composite layer. By integrating the optical amplitude limiting material with the nonlinear absorption characteristic, high-intensity laser is effectively limited, and damage to the semiconductor saturable absorber mirror is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of ultrafast lasers, and in particular to a semiconductor saturable absorber mirror packaging structure and method for integrating optical limiting materials. Background Art

[0002] Semiconductor saturable absorber mirrors (SESAMs), key components of ultrafast lasers, are widely used in the manufacture of mode-locked lasers. However, under the action of high-intensity lasers, SESAMs are susceptible to optical damage, which affects their performance and lifetime. Traditional protective measures, such as increasing the bandwidth of the reflector and optimizing the modulation depth, have improved the SESAM's tolerance to a certain extent, but they cannot fundamentally solve the damage problem caused by high-intensity lasers.

[0003] In addition, to further improve the damage threshold and stability of SESAMs, various methods have been developed, such as optimizing semiconductor materials, improving packaging structures, introducing strain-compensating layers, and using multilayer mirror structures. While these solutions have improved the performance and stability of SESAMs to a certain extent, they still have some limitations. For example, while optimizing semiconductor materials can increase the damage threshold, it may also lead to a decline in other optical properties; while improving packaging structures can improve heat dissipation efficiency, it may also increase packaging complexity and cost; and while introducing strain-compensating layers can increase the number and quality of quantum wells, it may also introduce additional stress and defects.

[0004] In summary, existing technologies for improving SESAM stability still have limitations. Therefore, a more comprehensive and effective solution is needed to address the problem of SESAM being easily damaged under high-intensity laser irradiation. Summary of the Invention

[0005] To address the problem that semiconductor saturable absorber mirrors (SESAMs) are susceptible to optical damage under high-intensity laser irradiation, leading to degraded device performance, reduced stability, and shortened service life, the present invention provides a SESAM packaging structure and method that integrates an optical limiting material. By integrating an optical limiting material with nonlinear optical properties into the SESAM packaging structure, the present invention aims to effectively confine and absorb high-intensity laser light, thereby reducing the risk of SESAM damage and improving its stability and service life in high-intensity laser environments.

[0006] The technical solution adopted in the present invention is:

[0007] 1. A semiconductor saturable absorber mirror packaging structure with integrated optical limiting material

[0008] The semiconductor saturable absorber mirror packaging structure includes a heat sink, a semiconductor saturable absorber mirror and a light limiting material composite layer; a stepped groove is provided on the top surface of the heat sink, and the semiconductor saturable absorber mirror and the light limiting material composite layer are arranged in sequence from bottom to top in the stepped groove, and the top surface of the light limiting material composite layer is flush with the top surface of the heat sink; the light limiting material composite layer is used to limit the damage of high-intensity laser to the semiconductor saturable absorber mirror, and includes a transparent substrate and a light limiting material film layer, and the light limiting material film layer is located near the semiconductor saturable absorber The heat sink is located on one side of the heat sink and contacts the overlapping area of ​​the top surface of the semiconductor saturable absorber mirror; the stepped groove consists of two grooves of different depths, the two grooves are arranged orthogonally, and the intersection is located at the center of the top surface of the heat sink, the two grooves are a deeper first groove and a shallower second groove, the first groove is used to arrange the semiconductor saturable absorber mirror, and the second groove is used to arrange the optical limiting material composite layer, the depth of the first groove is equal to the total thickness of the semiconductor saturable absorber mirror and the optical limiting material composite layer, and the depth of the second groove is equal to the thickness of the optical limiting material composite layer.

[0009] Specifically, a semiconductor saturable absorber mirror is arranged in the first trench, and a composite layer of optical limiting material is arranged in the second trench. The semiconductor saturable absorber mirror and the composite layer of optical limiting material overlap at the intersection of the two trenches to form an overlapping region. The active region of the semiconductor saturable absorber mirror is arranged in the overlapping region. With the length direction of the first trench as the X direction and the length direction of the second trench as the Y direction, in the X direction, the size of the active region of the semiconductor saturable absorber mirror is less than or equal to the size of the second trench, so that the composite layer of optical limiting material covers the active region of the semiconductor saturable absorber mirror.

[0010] Specifically, within the operating wavelength range of the semiconductor saturable absorber mirror, the optical limiting threshold of the optical limiting material composite layer and the damage threshold of the semiconductor saturable absorber mirror satisfy the following relationship: the optical limiting threshold of the optical limiting material is less than the damage threshold of the semiconductor saturable absorber mirror.

[0011] Specifically, the semiconductor saturable absorber mirror is bonded to the heat sink via thermally conductive adhesive, the optical limiting material composite layer is bonded to the heat sink via ultraviolet adhesive, and the optical limiting material film layer is generated on the bottom surface of the transparent substrate by spin coating, sputtering, evaporation or printing; the heat sink is made of copper or aluminum.

[0012] Preferably, the central operating wavelength of the semiconductor saturable absorber mirror is 1550 nm, and the damage threshold is 0.7-2 mJ / cm 2 The optical limiting material used in the optical limiting material film layer is a porphyrin-based two-dimensional polymer (Porphyrin-Based 2D Polymer). The optical limiting material film layer is formed by coating the porphyrin-based two-dimensional polymer on a transparent substrate using a solvent evaporation method.

[0013] Preferably, in the above solution, the transparent substrate is a quartz substrate.

[0014] Preferably, the porphyrin-based two-dimensional polymer uses meso-tetra(p-bromophenyl)porphyrin (TBrPP) as a monomer, and the light limiting threshold is 0.5 to 0.6 mJ / cm 2 .

[0015] 2. A packaging method for the semiconductor saturable absorber mirror packaging structure with integrated optical limiting material,

[0016] The packaging method comprises the following steps:

[0017] S1. Opening a first groove and a second groove on the top surface of the heat sink;

[0018] S2, placing the semiconductor saturable absorber mirror in the first groove, and bonding the semiconductor saturable absorber mirror to the heat sink using thermal conductive adhesive;

[0019] S3, placing the light limiting material composite layer with the light limiting material film layer facing downward in the second groove, and bonding the light limiting material composite layer to the heat sink using ultraviolet glue to obtain a semiconductor saturable absorber mirror packaging structure.

[0020] Furthermore, the packaging method also includes the following steps: selecting an optical limiting material based on the operating wavelength range or central operating wavelength and damage threshold of the semiconductor saturable absorber mirror, and using the optical limiting material to form an optical limiting material film layer on the bottom surface of the transparent substrate by spin coating, sputtering, evaporation or printing to obtain an optical limiting material composite layer.

[0021] Specifically, the process of selecting the optical limiting material according to the operating wavelength range or central operating wavelength and damage threshold of the semiconductor saturable absorber mirror is as follows: the optical limiting threshold of the optical limiting material composite layer and the damage threshold of the semiconductor saturable absorber mirror satisfy the following relationship: the optical limiting threshold of the optical limiting material is less than the damage threshold of the semiconductor saturable absorber mirror.

[0022] The beneficial effects of the present invention are:

[0023] 1. This invention integrates an optical limiting material with nonlinear absorption properties into the packaging structure of a semiconductor saturable absorber mirror (SSM), effectively limiting high-intensity laser light. This reduces damage to the SSM, and improves device stability and service life. This technological innovation not only addresses key issues in the practical application of SSMs but also provides a more reliable and efficient solution for ultrafast laser technology, optical amplifiers, optical sensors, and other fields.

[0024] 2. The preparation method of the present invention is simple, easy to implement, and suitable for large-scale production. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Schematic diagram of a typical optical limiting effect;

[0026] Figure 2 A semiconductor saturable absorber mirror packaging structure for integrated optical limiting materials;

[0027] Figure 3 Schematic diagram of the packaging method of a semiconductor saturable absorber mirror with integrated optical limiting material.

[0028] In the figure: 1. Heat sink, 2. Semiconductor saturable absorber mirror, 3. Composite layer with optical limiting material. DETAILED DESCRIPTION

[0029] The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0030] First, the terms involved in the present invention are explained as follows:

[0031] In this invention, "optical limiting materials" are materials that can limit light intensity through nonlinear optical effects (such as reverse saturation absorption, multiphoton absorption, or free-carrier absorption) when the light intensity exceeds a certain threshold. The realization of nonlinear optical effects relies on various mechanisms, including nonlinear absorption, nonlinear refraction, and nonlinear scattering. In a typical optical limiting effect, the material's response changes significantly with changes in the incident light intensity.

[0032] In the present invention, the "porphyrin-based two-dimensional polymer" refers to a polymer with porphyrin as a basic unit, which is connected by covalent bonds to form a two-dimensional structure.

[0033] The working principle of the present invention is as follows:

[0034] The present invention utilizes the nonlinear optical effect of the light limiting material to limit the intensity of the transmitted light to a safe level under strong light irradiation. Figure 1As shown, when the incident light intensity is low, the optical limiting material exhibits a linear optical effect, meaning that there is a linear relationship between the input and output light intensities. This means that even low-intensity incident light can pass through the material with virtually no attenuation, and the output light intensity is proportional to the input light intensity. However, when the incident light intensity increases to a certain threshold, the properties of the optical limiting material change significantly. At this point, nonlinear optical effects begin to dominate. Despite continued increases in the input light intensity, the output light intensity remains relatively constant and no longer increases with the input light intensity, thereby limiting the transmitted light intensity to a safe level. Therefore, the optical limiting material composite layer can respond rapidly to high-intensity laser irradiation, limiting the passage of light energy and thus effectively limiting damage to the semiconductor saturable absorber mirror caused by high-intensity laser light.

[0035] In a first aspect, the present invention provides a semiconductor saturable absorber mirror package structure integrated with an optical limiting material. This invention utilizes a heat sink's stepped grooves to ensure close contact between the semiconductor saturable absorber mirror and the optical limiting material layer, thereby limiting the transmitted energy of high-intensity laser light through the optical limiting material layer. Furthermore, the transparent substrate of the optical limiting material composite layer 3 serves as a protective layer, shielding the optical limiting material and semiconductor saturable absorber mirror from external interference.

[0036] like Figure 2 As shown, the semiconductor saturable absorber mirror package structure of the present invention includes a heat sink 1, a semiconductor saturable absorber mirror 2, and an optical limiting material composite layer 3. A stepped groove is defined on the top surface of the heat sink 1. The semiconductor saturable absorber mirror 2 and the optical limiting material composite layer 3 are sequentially arranged within the stepped groove from bottom to top. The top surface of the optical limiting material composite layer 3 is flush with the top surface of the heat sink 1.

[0037] The optical limiting material composite layer 3 is used to limit the damage of high-intensity laser to the semiconductor saturable absorber mirror. It includes a transparent substrate and an optical limiting material film layer. The optical limiting material film layer is located on the side close to the semiconductor saturable absorber mirror 2 and contacts the overlapping area of ​​the top surface of the semiconductor saturable absorber mirror 2.

[0038] The stepped groove consists of two grooves of different depths, which are arranged orthogonally and crosswise. The intersection of the two grooves is located at the center of the top surface of the heat sink 1. The two grooves are a deeper first groove and a shallower second groove. The first groove is used to arrange the semiconductor saturable absorber mirror 2, and the second groove is used to arrange the optical limiting material composite layer 3. The depth of the first groove is equal to the total thickness of the semiconductor saturable absorber mirror 2 and the optical limiting material composite layer 3, and the depth of the second groove is equal to the thickness of the optical limiting material composite layer 3.

[0039] Preferably, the semiconductor saturable absorber mirror 2 is bonded to the heat sink 1 by thermally conductive adhesive.

[0040] Preferably, the optical limiting material composite layer 3 is bonded to the heat sink 1 by ultraviolet adhesive.

[0041] Preferably, the optical limiting material film layer is formed on the bottom surface of the transparent substrate by spin coating, sputtering, evaporation or printing.

[0042] Preferably, the heat sink 1 is made of copper or aluminum.

[0043] Preferably, the transparent substrate is made of a material with high light transmittance and high mechanical strength, such as a quartz substrate, to ensure the stability and reliability of the package structure. This also protects the surface of the semiconductor saturable absorber mirror from scratches and dust contamination.

[0044] Preferably, the optical limiting materials include, but are not limited to, inorganic semiconductor materials, conjugated organic polymers, inorganic metal clusters, carbon nanomaterials, and two-dimensional materials, etc. These materials have significant nonlinear optical effects and are suitable for the packaging structure of the present invention.

[0045] By selecting an appropriate optical limiting material based on the wavelength range and damage threshold of the SESAM, the transmitted energy of high-intensity lasers can be effectively limited, thereby reducing the risk of SESAM damage. Specifically, within the operating wavelength range of the semiconductor saturable absorber mirror 2, the optical limiting threshold of the optical limiting material composite layer 3 and the damage threshold of the semiconductor saturable absorber mirror 2 satisfy the following relationship: the optical limiting threshold of the optical limiting material < the damage threshold of the semiconductor saturable absorber mirror.

[0046] Specifically, a semiconductor saturable absorber mirror 2 is disposed within the first trench, and an optical limiting material composite layer 3 is disposed within the second trench. The semiconductor saturable absorber mirror 2 and the optical limiting material composite layer 3 overlap at the intersection of the two trenches, forming an overlapping region. The active region of the semiconductor saturable absorber mirror 2 is disposed within this overlapping region. With the length of the first trench being the X-direction and the direction perpendicular to the first direction (i.e., the length of the second trench) being the Y-direction, the size of the active region of the semiconductor saturable absorber mirror 2 in the X-direction is less than or equal to the size of the second trench (i.e., the size of the second trench in the X-direction is the width of the second trench). This ensures that the optical limiting material composite layer 3 covers the active region of the semiconductor saturable absorber mirror 2, thereby ensuring that the optical limiting material film layer covers and contacts the top surface of the active region of the semiconductor saturable absorber mirror 2.

[0047] Preferably, the first groove is a through groove to facilitate matching with semiconductor saturable absorber mirrors of different sizes.

[0048] It should be noted that the active region of a semiconductor saturable absorber mirror (SESAM) refers to the key functional region in the device that is directly involved in light absorption and saturation absorption effects.

[0049] Preferably, the central operating wavelength of the semiconductor saturable absorber mirror 2 is 1550 nm, and the damage threshold range is 0.7 to 2 mJ / cm 2 The optical limiting material is a porphyrin-based two-dimensional polymer (Porphyrin-Based 2DPolymer), and the optical limiting material film layer is formed by coating the porphyrin-based two-dimensional polymer on a quartz substrate using a solvent evaporation method.

[0050] Preferably, the porphyrin-based two-dimensional polymer uses meso-tetra(p-bromophenyl)porphyrin (TBrPP) as a monomer and has a light limiting threshold of 0.5 to 0.6 mJ / cm 2 .

[0051] A second aspect of the present invention provides a packaging method for the aforementioned semiconductor saturable absorber mirror packaging structure with integrated optical limiting material. This method precisely aligns and packages the prepared optical limiting material composite layer 3 with the semiconductor saturable absorber mirror 2, ensuring that the optical limiting material film accurately covers the active area of ​​the semiconductor saturable absorber mirror 2. Highly transparent, low-loss packaging materials and processes are used during the packaging process to minimize optical loss and maintain the performance of the semiconductor saturable absorber mirror 2.

[0052] like Figure 3 As shown, the packaging method of the present invention specifically includes the following steps:

[0053] S1. Opening a first groove and a second groove on the top surface of the heat sink to form a stepped groove;

[0054] S2. Place the semiconductor saturable absorber mirror 2 in the first groove so that the active area of ​​the semiconductor saturable absorber mirror 2 is arranged at the intersection of the two grooves, and bond the semiconductor saturable absorber mirror 2 to the heat sink 1 using thermally conductive adhesive;

[0055] S3, placing the optical limiting material composite layer 3 with the optical limiting material film layer facing downward in the second groove, so that the top surface of the active region of the semiconductor saturable absorber mirror 2 contacts the optical limiting material film layer, and bonding the optical limiting material composite layer 3 to the heat sink 1 using ultraviolet adhesive to obtain a semiconductor saturable absorber mirror packaging structure;

[0056] Specifically, in step S3 , the optical limiting material film layer of the optical limiting material composite layer 3 is placed downward in the second groove, so that the top surface of the semiconductor saturable absorber mirror 2 contacts the optical limiting material film layer.

[0057] Furthermore, the packaging method of the present invention further includes the following steps: selecting an optical limiting material based on the operating wavelength range or central operating wavelength and damage threshold of the semiconductor saturable absorber mirror 2; and forming an optical limiting material film layer on the bottom surface of the transparent substrate using the optical limiting material by spin coating, sputtering, evaporation, or printing to obtain an optical limiting material composite layer 3. The optical limiting threshold of the optical limiting material composite layer 3 and the damage threshold of the semiconductor saturable absorber mirror 2 satisfy the following relationship: the optical limiting threshold of the optical limiting material < the damage threshold of the semiconductor saturable absorber mirror.

[0058] The specific embodiments of the present invention are as follows:

[0059] Example

[0060] This embodiment is for an operating wavelength of 1550nm, and the damage threshold is about 1mJ / cm 2 The commercial semiconductor saturable absorber mirror uses m-tetra(p-bromophenyl)porphyrin as a monomer and sodium chloride as a template to form a covalently linked porphyrin-based two-dimensional polymer through self-coupling polymerization. The two-dimensional polymer is then coated on a highly transparent quartz substrate by solvent evaporation, resulting in a light limiting threshold of 0.54mJ / cm 2 The optical limiting material composite layer 3 has a high transmittance in the linear response region of the optical limiting material composite layer 3. Finally, a semiconductor saturable absorber mirror packaging structure is manufactured using the optical limiting material composite layer 3.

[0061] The specific process is as follows:

[0062] 1. Obtaining a porphyrin-based two-dimensional polymer: After thoroughly mixing m-tetrakis(p-bromophenyl)porphyrin and sodium chloride in a mass ratio of 1:6000, under vacuum conditions, the furnace temperature was raised to 350°C, 400°C, 450°C, and 500°C, respectively, at a heating rate of 15°C / min. Each temperature was maintained for 10 hours to allow m-tetrakis(p-bromophenyl)porphyrin to undergo self-coupling polymerization under the action of sodium chloride template. After the reaction, the two-dimensional polymer was obtained through post-treatment.

[0063] 2. Preparation of optical limiting material composite layer 3: coating a 3.5 mg / mL n-butanol dispersion of a two-dimensional polymer on the surface of a highly transparent quartz substrate, and obtaining an optical limiting material composite layer 3 after evaporation of the solvent.

[0064] 3. Preparation of semiconductor saturable absorber mirror packaging structure:

[0065] 3.1. A first groove and a second groove are sequentially formed on the heat sink 1. The first groove and the second groove are orthogonal and intersecting. The depth of the first groove is equal to the total thickness of the semiconductor saturable absorber mirror 2 and the optical limiting material composite layer 3. The depth of the second groove is equal to the thickness of the optical limiting material composite layer 3.

[0066] 3.2. Place the semiconductor saturable absorber mirror 2 in the first groove, aligning the active area of ​​the semiconductor saturable absorber mirror 2 with the intersection of the two grooves, that is, aligning the active area with the center of the intersection. Use thermally conductive adhesive to bond the semiconductor saturable absorber mirror 2 to the heat sink 1.

[0067] 3.3. Place the optical limiting material composite layer 3 in the second groove so that the optical limiting material film layer contacts the upper surface of the active region of the semiconductor saturable absorber mirror 2 and the optical limiting material composite layer 3 is flush with the upper surface of the heat sink 1. Use ultraviolet glue to bond the optical limiting material composite layer 3 to the heat sink 1 and fix them together.

[0068] The optical limiting threshold of the optical limiting material composite layer 3 obtained in this embodiment is 0.54 mJ / cm 2 , the transmittance in the linear response region is high. When the incident energy density is greater than the optical limiting threshold, the energy density passing through the optical limiting material composite layer is maintained at about 0.54mJ / cm 2 And it no longer increases with the increase of input light intensity, while the damage threshold of commercial semiconductor saturable absorber mirror is about 1mJ / cm 2 Therefore, the energy density incident on the semiconductor saturable absorber mirror can be controlled within the damage threshold, effectively limiting the damage of the semiconductor saturable absorber mirror caused by high-intensity laser.

[0069] It should be noted that optical limiting materials have a damage threshold, but the damage threshold is generally large, in J / cm 2 The optical limiting material does not affect mode locking. At a safe incident energy density for the saturable absorber, the optical limiting material acts as a film layer with fixed transmittance. Beyond a certain energy density, nonlinear absorption (anti-saturation absorption, two-photon / multi-photon absorption, and free-carrier absorption) occurs, and the transmittance decreases. The optical limiting material only protects the saturable absorber; mode locking is not achieved through this hybrid structure.

[0070] The above specific embodiments are used to illustrate the present invention rather than to limit the present invention. Any modifications and changes made to the present invention within the spirit of the present invention and the protection scope of the claims shall fall within the protection scope of the present invention.

[0071] The above description is only a preferred embodiment of the present invention. Therefore, any equivalent changes or modifications made according to the structure, characteristics and principles described in the scope of the patent application of the present invention are included in the scope of the patent application of the present invention.

Claims

1. A semiconductor saturable absorber mirror package structure with integrated optical limiting material, characterized by: The semiconductor saturable absorber mirror packaging structure comprises a heat sink (1), a semiconductor saturable absorber mirror (2), and an optical limiting material composite layer (3); a stepped groove is provided on the top surface of the heat sink (1), and the semiconductor saturable absorber mirror (2) and the optical limiting material composite layer (3) are sequentially arranged in the stepped groove from bottom to top, and the top surface of the optical limiting material composite layer (3) is flush with the top surface of the heat sink (1); the optical limiting material composite layer (3) comprises a transparent substrate and an optical limiting material film layer, and the optical limiting material film layer is located on a side close to the semiconductor saturable absorber mirror (2) and contacts the top surface of the semiconductor saturable absorber mirror (2); The stepped groove is composed of two grooves of different depths, the two grooves are arranged orthogonally, and the intersection is located at the center of the top surface of the heat sink (1), the deeper first groove is used to arrange the semiconductor saturable absorber mirror (2), and the shallower second groove is used to arrange the optical limiting material composite layer (3), the depth of the first groove is equal to the total thickness of the semiconductor saturable absorber mirror (2) and the optical limiting material composite layer (3), and the depth of the second groove is equal to the thickness of the optical limiting material composite layer (3).

2. The semiconductor saturable absorber mirror package structure with integrated optical limiting material according to claim 1, characterized in that: A semiconductor saturable absorber mirror (2) is arranged in the first groove, and an optical limiting material composite layer (3) is arranged in the second groove. The semiconductor saturable absorber mirror (2) and the optical limiting material composite layer (3) form an overlapping area at the intersection of the two grooves, and the active area of ​​the semiconductor saturable absorber mirror (2) is arranged in the overlapping area. In the length direction of the first groove, the size of the active area of ​​the semiconductor saturable absorber mirror (2) is smaller than or equal to the size of the second groove, so that the optical limiting material composite layer (3) covers the active area of ​​the semiconductor saturable absorber mirror (2).

3. The semiconductor saturable absorber mirror package structure with integrated optical limiting material according to claim 1, characterized in that: Within the operating wavelength range of the semiconductor saturable absorber mirror (2), the optical limiting threshold of the optical limiting material used in the optical limiting material film layer of the optical limiting material composite layer (3) is less than the damage threshold of the semiconductor saturable absorber mirror (2).

4. The semiconductor saturable absorber mirror package structure with integrated optical limiting material according to claim 1, characterized in that: The semiconductor saturable absorber mirror (2) is bonded to the heat sink (1) via thermally conductive adhesive, the optical limiting material composite layer (3) is bonded to the heat sink (1) via ultraviolet adhesive, and the optical limiting material film layer is generated on the bottom surface of the transparent substrate via spin coating, sputtering, evaporation or printing methods; the heat sink (1) is made of copper or aluminum.

5. The semiconductor saturable absorber mirror package structure with integrated optical limiting material according to claim 1, characterized in that: The central operating wavelength of the semiconductor saturable absorption mirror (2) is 1550nm, and the damage threshold is 0.7-2mJ / cm 2 The optical limiting material used in the optical limiting material film layer is a porphyrin-based two-dimensional polymer, and the optical limiting material film layer is formed by coating the porphyrin-based two-dimensional polymer on a transparent substrate using a solvent evaporation method.

6. The semiconductor saturable absorber mirror package structure with integrated optical limiting material according to claim 5, characterized in that: The porphyrin-based two-dimensional polymer uses m-tetra(p-bromophenyl)porphyrin as a monomer and has a light limiting threshold of 0.5 to 0.6 mJ / cm 2 .

7. A packaging method for a semiconductor saturable absorber mirror packaging structure with integrated optical limiting material according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1. Opening a first groove and a second groove on the top surface of the heat sink; S2, placing the semiconductor saturable absorber mirror (2) in the first groove, and bonding the semiconductor saturable absorber mirror (2) to the heat sink (1) using a thermally conductive adhesive; S3, placing the light limiting material film layer of the light limiting material composite layer (3) downward in the second groove, and bonding the light limiting material composite layer (3) to the heat sink (1) using ultraviolet glue to obtain a semiconductor saturable absorber mirror packaging structure.

8. The packaging method according to claim 7, wherein: The following steps are also included: Selecting an optical limiting material according to the operating wavelength range or central operating wavelength and damage threshold of the semiconductor saturable absorber mirror (2), and using the optical limiting material to form an optical limiting material film layer on the bottom surface of a transparent substrate by spin coating, sputtering, evaporation or printing to obtain an optical limiting material composite layer (3); The process of selecting the optical limiting material according to the operating wavelength range or central operating wavelength and damage threshold of the semiconductor saturable absorber mirror (2) is specifically as follows: the optical limiting threshold of the optical limiting material is less than the damage threshold of the semiconductor saturable absorber mirror.

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