Device and method for regulating and controlling horizontal electroplating uniformity of wafer under cooperative control of anode and cathode double partitions

Abstract

The invention discloses a device and a method for regulating and controlling the uniformity of wafer horizontal electroplating under the cooperative control of anode and cathode double partitions, which are applied to the technical field of semiconductor manufacturing, and the key points of the technical scheme are as follows: the device comprises an electroplating cavity, a partition anode device is coaxially arranged at the bottom of the electroplating cavity, and the partition anode device is composed of a plurality of independently controlled concentric annular regions; a plurality of electroplating liquid supply openings are formed in the electroplating cavity in the circumferential direction, and annular flow equalizing plates with fixed interval holes are connected to the liquid supply openings; a partition auxiliary cathode device is arranged in the wafer clamping device, the wafer clamping device is composed of a plurality of annular metal sheets concentric with the wafer, the metal sheets are connected with different channels of the multi-channel power supply respectively, and the material of the metal sheets is the same as that of the electroplated metal; the channel modules of the multi-channel power supply are connected in parallel, and current parameters can be independently adjusted; the method has the technical effects that the problems of edge effect and center underplating in the wafer electroplating process are reduced, and the flexibility of the wafer electroplating process is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer-level electroplating uniformity control device and method with coordinated control of anode and cathode dual-zones. Background Art

[0002] Wafer electroplating technology is one of the key processes in semiconductor manufacturing. The uniformity of its coating is a key factor affecting chip yield and directly affects device performance and reliability. During the wafer electroplating process, due to the nanometer-thick conductive seed layer deposited on the wafer surface, there is a large resistance when the current flows from the edge to the center of the wafer, resulting in a potential difference between the edge and the center of the wafer (edge ​​effect). This leads to high current density and fast deposition speed at the edge of the wafer, while the current density in the center is lower, resulting in the phenomenon of thick coating at the edge and thin center. With the development of the miniaturization trend of electronic devices, electroplating needs to be carried out on thinner and thinner seed layers, and the resistance will increase as the thickness of the wafer seed layer decreases, exacerbating the existence of the edge effect.

[0003] Currently, Chinese patent application number CN117758344A discloses "Wafer notch shielding device, electroplating device, and method for improving wafer electroplating uniformity." It proposes a shielding device that cooperates with a sensor to reduce the impact of excessive electric field intensity near the wafer notch, but it will cause disturbances in the flow field, causing multiple factors of interference to the wafer electroplating process. Chinese patent application CN108707940B discloses "Apparatus and method for dynamically controlling electroplating uniformity using remote current." It proposes a second electrode control method that can improve the radial uniformity of electroplating. However, it can only control the current density at the edge of the wafer, and lacks flexibility in controlling the electric field at the center of the wafer. It is difficult to adapt to the electroplating requirements of wafers of different sizes or different technology routes (such as wafer-level packaging (WLP) technology route and through-silicon via (TSV) technology route), and needs improvement. Summary of the Invention

[0004] The first purpose of the present invention is to provide a wafer horizontal electroplating uniformity control device with coordinated control of anode and cathode dual partitions. Its advantage is to reduce the edge effect and center under-plating problems in the wafer electroplating process and improve the flexibility of the wafer electroplating process.

[0005] The above technical objectives of the present invention are achieved through the following technical solutions: a wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones, comprising: The electroplating chamber has a coaxially arranged partitioned anode device at its bottom. The partitioned anode device is composed of multiple independently controlled concentric annular zones, each of which is isolated by insulating material and connected to different channels of a multi-channel power supply. The electroplating chamber is circumferentially provided with multiple electroplating liquid supply ports, each of which is connected to an annular current equalizing plate with fixed-spaced holes. A wafer clamping device is provided with a partitioned auxiliary cathode device, which is composed of multiple annular metal sheets concentric with the wafer, separated by insulating material, each metal sheet is connected to a different channel of a multi-channel power supply, and the metal sheet material is the same as the electroplating metal; Each channel module of the multi-channel power supply is connected in parallel and can independently adjust current parameters.

[0006] The present invention is further configured as follows: the partitioned anode device includes a partitioned anode frame and a partitioned conductive platinum-titanium mesh; the partitioned anode frame is an integrated structure of three or more independently controlled concentric ring frames; the height of each partition gradually increases from the outside to the inside; the partitioned anode frame uses insulating materials to isolate the current of each partition; each partition is connected to a different channel of a multi-channel power supply for independent control; the partitioned conductive platinum-titanium mesh corresponds to the partitioned anode frame, is placed in the partitioned anode frame and is fixed by a partitioned conductive rod.

[0007] The present invention is further configured as follows: the partitioned auxiliary cathode device includes a partitioned auxiliary cathode sheet, an insulating isolation sheet and a partitioned auxiliary cathode conductive device, the partitioned auxiliary cathode sheet is composed of at least three annular metal sheet components located on the periphery of the wafer and concentrically arranged with the wafer, the annular metal sheet material is the same as the electroplated metal, and adjacent annular metal sheets are isolated based on the insulating isolation sheet, the partitioned auxiliary cathode conductive device corresponds one-to-one to the partitioned auxiliary cathode sheet, and is arranged above the annular metal sheet and in contact with it for conduction.

[0008] The present invention is further configured such that the edge of the annular metal sheet near the wafer notch is designed as a pictographic structure for adjusting the current density near the wafer notch.

[0009] The present invention is further configured as follows: the electroplating chamber is divided into an anode electroplating liquid chamber located at the bottom of the electroplating chamber and a cathode electroplating liquid chamber located at the top based on an ion membrane; metal cations can enter the cathode electroplating liquid chamber from the anode electroplating liquid chamber under the drive of an electric field, while the electroplating liquid and other ions cannot pass through; the electroplating liquid in the anode electroplating liquid chamber flows in a storage overflow manner; a plurality of liquid inlets and liquid outlets are uniformly provided at the bottom and top of the anode electroplating liquid chamber along the circumferential direction; the electroplating liquid enters through the liquid inlets, gradually rises from the liquid level at the bottom, and flows out through the liquid outlet provided at the top of the anode electroplating liquid chamber.

[0010] The present invention is further configured as follows: the ion membrane is fixedly connected to the electroplating chamber based on an ion membrane frame, and the ion membrane frame is in a downwardly concave arc shape to prevent bubbles from accumulating in the anode electroplating liquid chamber.

[0011] The present invention is further configured as follows: a swing device and a flow field control device are provided in the cathode electroplating liquid cavity; the flow field control device includes a diverter device, a flow sensor, an annular flow equalizing block and an electromagnetic flow valve, the electroplating liquid is evenly distributed on the side of the electroplating cavity through the diverter device, the annular flow equalizing block is fixed in the groove on the side of the electroplating cavity, the flow of each pipeline is independently controlled by the flow sensor and the electromagnetic flow valve, and the annular flow equalizing block is fixedly connected to the liquid inlet pipeline to improve the uniformity of mass transfer.

[0012] The present invention is further configured as follows: the swing device drives a cam slider mechanism through a servo motor to swing the swing device back and forth, thereby reducing the difference in mass transfer velocity at the center of the wafer. At the same time, the plating solution impact caused by the swing device can fill the plating solution distribution in the high aspect ratio through-silicon via (TSV) technology route, thereby achieving uniform electroplating; the swing speed and torque of the swing device can be freely controlled, with a swing speed of 0-500 rpm and a swing amplitude of 20-100 mm.

[0013] The second purpose of the present invention is to provide a method for controlling wafer-level electroplating uniformity with coordinated control of anode and cathode dual partitions, which has the advantage of reducing the edge effect and center under-plating problems in the wafer electroplating process and improving the flexibility of the wafer electroplating process.

[0014] The above technical objectives of the present invention are achieved through the following technical solutions: a wafer-level electroplating uniformity control method with coordinated control of anode and cathode dual zones, using a wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones as described in any of the above technical solutions; comprising: 1) Determine the anode partition current parameters, auxiliary cathode partition current parameters and flow field parameters based on multi-physics field simulation; 2) Independently adjust the current density of each anode partition so that the current density in the center area is higher than that in the edge area to compensate for the edge effect; 3) Independently adjust the current density of each auxiliary cathode partition to dilute the electric field concentration area at the edge of the wafer; 4) The flow rate of each liquid inlet is independently regulated by the flow field control device, and the wafer is driven to rotate and swing in combination with the swing device to optimize the uniformity of mass transfer; 5) Monitor flow and current parameters in real time, and dynamically adjust electric field and flow field parameters through sensor feedback.

[0015] The present invention is further configured as follows: the multi-physics field simulation targets the uniformity of the coating thickness in the radial and azimuthal directions on the wafer surface, and specifically includes: Based on electric field simulation, the height of the anode partition frame, the pictographic curvature of the auxiliary cathode sheet, and the porosity of the current equalizing plate are optimized to ensure uniform current density across the wafer. Based on flow field simulation, the pore parameters of the flow equalizing block, the pore size of the flow equalizing plate, and the size of the fan blades of the swing device are optimized to make the flow field on the wafer surface uniform.

[0016] In summary, the present invention has the following beneficial effects: 1. Through independent current control of the anode partition and the auxiliary cathode partition, the difference in electric field strength between the edge and center of the wafer is specifically compensated. The anode partition adopts a "low outside, high inside" height design. By shortening the distance between the anode and cathode in the center area, the center current density is increased, alleviating the "center underplating" problem caused by the edge effect. The auxiliary cathode partition uses independent current control to shunt the local electric field at the edge of the wafer, suppressing the problem of excessive edge coating. At the same time, the pictographic edge design of the auxiliary cathode piece at the wafer notch can accurately adjust the current density near the notch, solving the problem of azimuthal unevenness. Combined with the parallel control of multi-channel power supplies, dynamic coordinated optimization of the electric field across the entire wafer area is achieved, ensuring the uniformity of the wafer coating thickness. 2. The annular flow equalizer and flow field control device within the cathode plating chamber forcibly equalizes the plating solution flow rate through a fixed-interval hole structure. Combined with the mechanical disturbance of the swing device, this effectively eliminates the problem of insufficient central mass transfer caused by differences in wafer rotation linear speed. Furthermore, for the TSV high-aspect-ratio through-hole process, the plating solution impact of the swing device can achieve uniform filling of the plating solution within the through-hole, avoiding bubble retention and concentration gradients. The liquid storage overflow design of the anode plating chamber, combined with the arc-surface ion membrane frame, ensures that there is no bubble accumulation, further ensuring flow field stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a cross-sectional view of the overall structure of this embodiment; Figure 2 is a schematic structural diagram of the partitioned auxiliary cathode device of this embodiment; Figure 3 Schematic diagram of the structure of the partitioned anode device of this embodiment; Figure 4 Schematic diagram of the structure of the flow field control device of this embodiment.

[0018] Figure numerals: 1. Partitioned auxiliary cathode device; 11. Partitioned auxiliary cathode plate; 12. Insulating isolation plate; 13. Partitioned auxiliary cathode conductive device; 2. Wafer; 3. Wafer clamping device; 4. Swinging device; 5. Annular current equalizing plate; 6. Flow field control device; 61. Annular current equalizing block; 7. Ion membrane frame; 8. Ion membrane; 9. Electroplating chamber; 10. Partitioned anode device; 101. Partitioned anode frame; 102. Partitioned conductive platinum titanium mesh; 103. Partitioned conductive rod. DETAILED DESCRIPTION

[0019] The present invention will be further described in detail below with reference to the accompanying drawings.

[0020] Example 1: refer to Figure 1 A wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones includes: The electroplating chamber 9 has a coaxially arranged partitioned anode device 10 at its bottom. The partitioned anode device 10 is composed of multiple independently controlled concentric annular zones, each of which is isolated by insulating material and connected to different channels of a multi-channel power supply. The electroplating chamber 9 is circumferentially provided with multiple electroplating liquid supply ports, each of which is connected to an annular current equalizing plate 5 with fixed-spaced holes. The wafer 2 holding device has a partitioned auxiliary cathode device 1 installed therein. The partitioned auxiliary cathode device 1 is composed of multiple annular metal sheets concentric with the wafer 2. The metal sheets are isolated by insulating materials. Each metal sheet is connected to a different channel of the multi-channel power supply. The metal sheet material is the same as the electroplating metal. Each channel module of the multi-channel power supply is connected in parallel and can independently adjust current parameters.

[0021] Specifically, the wafer 2 clamping device is used to keep the wafer 2 horizontally fixed and rotated during the electroplating period, thereby improving the uniformity of electroplating at different azimuth angles of the wafer 2. Its rotation speed can be adjusted and controlled to regulate the electrolyte diffusion state on the surface of the wafer 2. The positioning parts, fixing parts, sealing parts, rotation control parts, and annular conductive parts of the wafer 2 are not drawn in the accompanying drawings. They belong to conventional technical configurations in this field, but through synergistic effects, they can further improve the key performance indicators of wafer 2 processing, which is also important for the processing accuracy and uniformity of wafer 2: the wafer 2 positioning part is a conical surface with a set slope, and the opening gradually decreases from top to bottom. The wafer 2 is small, with a mechanical guide structure designed at the bottom to achieve micron-level positioning of wafer 2. A micron-precision electric cylinder is used as the fixture, driving a pressure plate with an elastic element to press wafer 2 against the seal, preventing the plating solution in the plating chamber 9 from penetrating the back of wafer 2 and affecting plating uniformity. The seal is a custom-made annular fluororubber ring, ensuring a complete circumferential seal around wafer 2. The annular conductive element uses millimeter-wide piano-key-style conductive contacts to ensure a more uniform electric field at different azimuth angles. The wafer 2 rotation control unit controls the wafer 2's rotation speed and torque, achieving speed control within the range of 0-500 rpm with an accuracy of one thousandth of the range. The wafer 2 clamping device is controlled by a micron-precision lead screw and nut mechanism for vertical movement, enabling entry and exit of the processing position within the plating chamber 9, with a range of 300 microns.

[0022] Specifically, the partitioned anode device 10 includes a partitioned anode frame 101 and a partitioned conductive platinum titanium mesh 102. The partitioned anode frame 101 is an integrated structure of three or more independently controlled concentric ring frames. The height of each partition gradually increases from the outside to the inside. The partitioned anode frame 101 uses insulating materials to isolate the current of each partition. Each partition is connected to a different channel of a multi-channel power supply for independent control; the partitioned conductive platinum titanium mesh 102 corresponds to the partitioned anode frame 101, is placed in the partitioned anode frame 101 and is fixed by a partitioned conductive rod 103.

[0023] Specifically, the partitioned auxiliary cathode device 1 includes a partitioned auxiliary cathode 1 sheet, an insulating spacer 12, and a partitioned auxiliary cathode 1 conductive device. The partitioned auxiliary cathode 1 sheet is composed of at least three annular metal sheet assemblies located on the periphery of the wafer 2 and concentrically arranged with the wafer 2. The annular metal sheet material is the same as the electroplated metal. Adjacent annular metal sheets are isolated based on the insulating spacer 12. The insulating spacer 12 is designed with grooves to clamp and fix the auxiliary cathode sheet. The partitioned auxiliary cathode 1 conductive device corresponds to the partitioned auxiliary cathode 1 sheet one by one and is arranged above the annular metal sheet and in contact with the conductive device. The edge of the annular metal sheet near the notch of the wafer 2 is designed as a pictographic structure to adjust the current density near the notch of the wafer 2.

[0024] Specifically, the electroplating chamber 9 is divided into an anode plating liquid chamber located at the bottom of the electroplating chamber 9 and a cathode plating liquid chamber located at the top based on the ion membrane 8. Metal cations can enter the cathode plating liquid chamber from the anode plating liquid chamber under the drive of the electric field, while the plating liquid and other ions cannot pass through, thereby achieving the continuity of the electric field and the isolation of electrochemical reactants in the anode and cathode regions. The flow mode of the plating liquid in the anode plating liquid chamber is a liquid storage overflow type. The bottom and top of the anode plating liquid chamber are respectively uniformly provided with a plurality of liquid inlets and liquid outlets along the circumferential direction. The plating liquid enters from the liquid inlet, gradually rises from the liquid level at the bottom, reaches the liquid outlet set at the top of the anode plating liquid chamber and flows out. The ion membrane 8 is fixedly connected to the electroplating chamber 9 based on the ion membrane 8 frame 7, and the ion membrane 8 frame 7 is in a downwardly concave arc shape to avoid bubbles accumulating in the anode plating liquid chamber.

[0025] Specifically, a swing device 4 and a flow field control device 6 are provided in the cathode plating liquid cavity; the flow field control device 6 includes a diverter device, a flow sensor, an annular flow equalizing block 61 and an electromagnetic flow valve. The plating liquid is evenly distributed on the side of the plating cavity 9 through the diverter device. The annular flow equalizing block 61 is fixed in the side groove of the plating cavity 9. The flow of each pipeline is independently controlled by the flow sensor and the electromagnetic flow valve. The annular flow equalizing block 61 is fixedly connected to the liquid inlet pipeline to improve the uniformity of mass transfer. The annular flow equalizing block 61 is placed and fixed in the side groove of the plating cavity 9. Fixed-spaced holes are opened on it. The aperture size and spacing are designed according to the multi-physical field simulation parameters to achieve uniformity of the liquid inlet. Each section of the liquid inlet pipeline is connected to the annular flow equalizing block 61 to improve the uniformity of mass transfer. Since the wafer 2 rotation mechanism rotates with wafer 2 as the center, the closer to the center of wafer 2, the smaller the rotation linear velocity is, and the rotation linear velocity at the very center is zero. The flow velocity at the electroplating interface will significantly affect the replenishment of ions, which will cause an edge effect in the mass transfer of the electroplating solution. Therefore, the swing device 4 drives the cam slider mechanism through the servo motor to make the swing device 4 swing back and forth, so that the difference in mass transfer velocity at the center of wafer 2 is reduced. At the same time, the plating solution impact energy brought by the swing device 4 fills the plating solution distribution in the high aspect ratio through-silicon via technology route (TSV), thereby achieving uniform electroplating. Example 2: A wafer-level electroplating uniformity control method with coordinated control of anode and cathode dual zones is provided, using a wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones as shown in Example 1, comprising: 1) Determine the anode partition current parameters, auxiliary cathode partition current parameters, and flow field parameters based on multi-physics simulation. The multi-physics simulation targets the uniformity of the coating thickness in the radial and azimuthal directions on the surface of wafer 2, specifically including: Based on electric field simulation, the height of the anode partition frame, the pictographic curvature of the auxiliary cathode sheet, and the porosity of the current equalizing plate are optimized to make the current density of wafer 2 uniform, which serves as a basic means for controlling the electric field uniformity of the device of the present invention; the larger the height of the anode partition frame, the smaller the anode-cathode spacing. By adjusting the anode-cathode spacing, the current density difference of different partitions can be achieved, weakening the edge effect; the basic function of the current equalizing plate is to uniformize the flow field. Since the material used is a non-conductive material, its porosity, pore distribution, and plate thickness in the radial position also have an impact on the electric field. Based on the electric field simulation, with the current density uniformity of wafer 2 as the final optimization goal, the design of the anode partition frame height, the pictographic curvature of the partition auxiliary cathode 1, and the porosity and thickness of the current equalizing plate are completed; Based on flow field simulation, the pore parameters of the flow equalizing block, the pore size of the flow equalizing plate, and the size of the fan blades of the swing device 4 are optimized to make the flow field on the surface of wafer 2 uniform; 2) Independently adjust the current density of each anode partition so that the current density in the center area is higher than that in the edge area to compensate for the edge effect; 3) Independently adjust the current density of each auxiliary cathode partition to dilute the electric field concentration area at the edge of wafer 2; 4) The flow rate of each liquid inlet is independently regulated by the flow field control device 6, and the wafer 2 is driven to rotate and swing in combination with the swing device 4 to optimize the mass transfer uniformity; 5) Monitor flow and current parameters in real time, and dynamically adjust electric field and flow field parameters through sensor feedback.

[0026] In order to solve the problems of edge effect and under-plating in the center during the electroplating process of 12-inch wafer 2, a multi-zone coordinated control method of anode and cathode is adopted; multiple concentric annular areas of the anode are connected to different power supply channels, which can increase the current in the center area of ​​the anode and gradually decrease it toward the edge, thereby increasing the electric field line density in the center area of ​​wafer 2, thereby improving the edge effect of the electroplating thickness link; since there is a distance between the anode and the cathode, it is still impossible to achieve very precise control by regulating the electric field distribution only from the partitioned anode, so the partitioned auxiliary cathode 1 is also an important link in achieving uniformity control; in order to solve the electric field concentration at the edge of wafer 2, the electrical parameters of the partitioned auxiliary cathode 1 are controlled, which can dilute the electric field line density at the edge and alleviate the edge effect; in addition, for the electroplating non-uniformity in azimuth, it is generally caused by the dilution of electric field lines or the non-uniformity of mass transfer caused by the low flow rate point of the flow field. The circumferentially partitioned electroplating liquid supply based on the present invention can regulate the flow velocity at a certain azimuth angle in a targeted manner to regulate the flow field uniformity. In this embodiment, the control method is illustrated by taking the 12-inch wafer 2 WLP electroplating process as an example, but it does not mean that this method is only applicable to this process. This method is also applicable to high-precision and uniform control of the surface coating thickness of wafers 2 of different sizes and types, and is applicable to the electroplating of wafers 2 of different technical routes, such as the wafer-level packaging (WLP) technical route and the through-silicon via (TSV) technical route.

[0027] This specific embodiment is merely an explanation of the present invention and is not intended to limit the present invention. After reading this specification, those skilled in the art can make creative modifications to this embodiment as needed. However, as long as they are within the scope of the claims of the present invention, they are protected by patent law.

Claims

1. A wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones, characterized in that: include: An electroplating chamber (9) is provided with a partitioned anode device (10) coaxially arranged at its bottom, the partitioned anode device (10) consisting of a plurality of independently controlled concentric annular zones, each annular zone being isolated by an insulating material and respectively connected to different channels of a multi-channel power supply; the electroplating chamber (9) is provided with a plurality of electroplating liquid supply ports in a circumferential direction, the supply ports being connected to an annular current equalizing plate (5) having fixed spaced holes; A wafer (2) clamping device is provided with a partitioned auxiliary cathode device (1) therein, wherein the partitioned auxiliary cathode device (1) is composed of a plurality of annular metal sheets concentric with the wafer (2), the metal sheets being isolated by insulating materials, each metal sheet being connected to a different channel of a multi-channel power supply, and the metal sheet material being the same as the electroplating metal; Each channel module of the multi-channel power supply is connected in parallel and can independently adjust current parameters.

2. The wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones according to claim 1 is characterized in that: The partitioned anode device (10) comprises a partitioned anode frame (101) and a partitioned conductive platinum titanium mesh (102); the partitioned anode frame (101) is an integrated structure of three or more independently controlled concentric ring frames, the height of each partition gradually increases from the outside to the inside; the partitioned anode frame (101) uses insulating material to isolate the current of each partition, and each partition is connected to a different channel of a multi-channel power supply for independent control; the partitioned conductive platinum titanium mesh (102) corresponds to the partitioned anode frame (101), is placed in the partitioned anode frame (101), and is fixed by a partitioned conductive rod (103).

3. The wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones according to claim 1 is characterized in that: The partitioned auxiliary cathode device (1) comprises a partitioned auxiliary cathode (1) sheet, an insulating spacer (12) and a partitioned auxiliary cathode (1) conductive device. The partitioned auxiliary cathode (1) sheet is composed of at least three annular metal sheet components located on the periphery of a wafer (2) and concentrically arranged with the wafer (2). The annular metal sheet material is the same as the electroplated metal. Adjacent annular metal sheets are isolated based on the insulating spacer (12). The partitioned auxiliary cathode (1) conductive device corresponds to the partitioned auxiliary cathode (1) sheet one by one and is arranged above the annular metal sheet and in contact with the conductive sheet.

4. The wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones according to claim 3 is characterized in that: The edge of the annular metal sheet near the notch of the wafer (2) is designed as a pictographic structure, which is used to adjust the current density near the notch of the wafer (2).

5. The wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones according to claim 1 is characterized in that: The electroplating chamber (9) is divided into an anode electroplating liquid chamber located at the bottom of the electroplating chamber (9) and a cathode electroplating liquid chamber located at the top based on the ion membrane (8); metal cations can enter the cathode electroplating liquid chamber from the anode electroplating liquid chamber under the drive of the electric field, while the electroplating liquid and other ions cannot pass through; the flow mode of the electroplating liquid in the anode electroplating liquid chamber is a liquid storage overflow type; the bottom and top of the anode electroplating liquid chamber are respectively and evenly provided with a plurality of liquid inlets and liquid outlets along the circumferential direction; the electroplating liquid enters from the liquid inlets, gradually rises from the liquid level at the bottom, and flows out from the liquid outlet provided at the top of the anode electroplating liquid chamber.

6. The wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones according to claim 5 is characterized in that: The ion membrane (8) is fixedly connected to the electroplating chamber (9) based on the ion membrane frame (7), and the ion membrane frame is in a downwardly concave arc shape to prevent bubbles from accumulating in the anode electroplating liquid chamber.

7. The wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones according to claim 5 is characterized in that: The cathode electroplating liquid cavity is provided with an oscillating device (4) and a flow field control device (6); the flow field control device (6) comprises a flow diverter, a flow sensor, an annular flow equalizing block (61) and an electromagnetic flow valve; the electroplating liquid is evenly distributed on the side of the electroplating cavity (9) through the flow diverter; the annular flow equalizing block (61) is fixed in a groove on the side of the electroplating cavity (9); the flow of each pipeline is independently controlled by the flow sensor and the electromagnetic flow valve; the annular flow equalizing block (61) is fixedly connected to the liquid inlet pipeline to improve mass transfer uniformity.

8. The wafer-level electroplating uniformity control device with coordinated control of anode and cathode dual zones according to claim 7 is characterized in that: The swing device (4) drives the cam slider mechanism through the servo motor, so that the swing device (4) can swing back and forth, thereby reducing the difference in mass transfer speed at the center of the wafer (2). At the same time, the plating liquid impact brought by the swing device (4) can fill the plating liquid distribution in the high aspect ratio through-silicon via technology route (TSV) to achieve uniform electroplating; the swing speed and torque of the swing device (4) can be freely controlled, the swing speed is 0-500 rpm, and the swing amplitude is 20-100 mm.

9. A method for controlling wafer-level electroplating uniformity with coordinated control of anode and cathode dual zones, using a device for controlling wafer-level electroplating uniformity with coordinated control of anode and cathode dual zones as described in any one of claims 1 to 8; characterized in that: include: 1) Determine the anode partition current parameters, auxiliary cathode partition current parameters and flow field parameters based on multi-physics field simulation; 2) Independently adjust the current density of each anode partition so that the current density in the center area is higher than that in the edge area to compensate for the edge effect; 3) Independently adjust the current density of each auxiliary cathode partition to dilute the electric field concentration area at the edge of the wafer (2); 4) The flow rate of each liquid inlet is independently regulated by the flow field control device (6), and the wafer (2) is driven to rotate and swing in combination with the swing device (4) to optimize the mass transfer uniformity; 5) Monitor flow and current parameters in real time, and dynamically adjust electric field and flow field parameters through sensor feedback.

10. The wafer-level electroplating uniformity control method with dual-zone coordinated control of anode and cathode according to claim 9 is characterized in that: The multi-physics simulation targets the uniformity of the coating thickness in the radial and azimuthal directions on the surface of the wafer (2), and specifically includes: Based on electric field simulation, the height of the anode partition frame, the pictographic curvature of the auxiliary cathode sheet and the porosity of the current balancing plate are optimized to make the current density of the wafer (2) uniform; Based on flow field simulation, the pore parameters of the flow averaging block, the pore size of the flow averaging plate and the blade size of the swing device (4) are optimized to make the flow field on the surface of the wafer (2) uniform.

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