Multi-field adjustable high-speed electro-optical logic device and implementation method thereof

Abstract

The invention discloses a multi-field adjustable high-speed electro-optical logic device and an implementation method thereof. According to the invention, light output is electrically controlled, and two logic functions are realized on the same device; the input laser wavelength comprises a main communication wave band, and a PL output signal is matched with an atmosphere window, so that information transmission is facilitated; the working switch ratio of the logic device is greater than two orders of magnitude, static power consumption is reduced, and the anti-interference capability and the accuracy of logic operation are improved; the response time is short, the key effect on improving the operation speed is achieved, and high-frequency work is supported; a PL output signal is sensitive to polarization, so that the degree of freedom of transmitted information is higher; the method is applied to the fields of encryption transmission of efficient optical communication, logic operation in an all-optical chip and the like; not only is the working switch ratio as high as 2 orders of magnitude shown, but also the nanosecond-order response speed can be maintained, so that the method has great potential to solve the problems in the science and technology fields such as encryption transmission of efficient mid-infrared light communication.

Description

Technical Field

[0001] The present invention relates to electro-optical logic device technology, and in particular to a multi-field adjustable high-speed electro-optical logic device and an implementation method thereof. Background Art

[0002] Compared to traditional electrical logic devices, electro-optical logic devices offer low signal latency, low transmission power consumption, and strong resistance to electromagnetic interference, promising applications in cutting-edge fields such as optical quantum communications. However, research on these devices is relatively scarce. Typical electro-optical logic device designs often rely on the coupling of multiple microring tuners, resulting in complex structures and high fabrication challenges. Designing an electro-optical logic device with fast response, high on / off ratio, strong resistance to interference, and a simple, easily fabricated structure is crucial for the advancement of important cutting-edge fields such as all-optical logic computing. Summary of the Invention

[0003] To address the problems of the above-mentioned prior art, the present invention proposes a multi-field adjustable high-speed electro-optical logic device and its implementation method. The device outputs a photoluminescence signal based on the principle of photoluminescence (PL), and flexibly controls the output signal by changing the top gate voltage and the intensity of the input laser, among other multi-field control methods. By rationally designing different combinations of logic inputs, the device realizes the functions of an AND gate or a NOR gate, enabling it to simultaneously perform the tasks of electro-optical conversion and logic operations in an optoelectronic hybrid system.

[0004] An object of the present invention is to provide a multi-field adjustable high-speed electro-optical logic device.

[0005] The same device implements the functions of an AND gate or a NOR gate. The multi-field adjustable high-speed electro-optical logic device of the present invention includes: a substrate, an insulating layer, a photoluminescent layer, a ground electrode, a transparent dielectric layer, and a top gate. The substrate is made of a conductive material with high reflectivity. An insulating layer is provided on the substrate, and the insulating layer is made of an electrically insulating material. A photoluminescent layer and a ground electrode are provided on the insulating layer, respectively, with ohmic contact between the two, and the photoluminescent layer is made of a material capable of generating photoluminescence when irradiated by laser. A transparent dielectric layer is provided on the photoluminescent layer and the ground electrode, and the transparent dielectric layer is made of a light-transmitting and electrically insulating material. A top gate is provided on the transparent dielectric layer, and the top gate is made of a conductive, light-transmitting material that does not absorb the photoluminescent (PL) output signal. The insulating layer insulates the substrate from the photoluminescent layer, and the transparent dielectric layer insulates the photoluminescent layer from the top gate. The top gate serves as a first electrode, the substrate serves as a second electrode, and the ground electrode is grounded. The first and second electrodes are connected to the positive electrodes of a first and second voltage sources, respectively, and the photoluminescent layer shares a common ground with the negative electrodes of the first and second voltage sources.

[0006] The input laser wavelength covers the visible and near-infrared bands. The input laser passes through the top gate and transparent electrolyte layer and is incident on the photoluminescent layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a photoluminescent (PL) output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The PL output signal is reflected along the reflection direction and received by an external measurement circuit, which determines the signal intensity of the PL output signal.

[0007] A first voltage or a second voltage is applied to the first electrode or the second electrode respectively by a first voltage source or a second voltage source, and the polarity of the first voltage or the second voltage is changed to regulate the carrier density of the photoluminescent layer by electrostatic doping, thereby regulating the PL output signal; when the first voltage or the second voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and the concentration increases more significantly as the absolute value of the voltage within the regulation range increases, and the PL output signal is enhanced and exceeds the upper threshold; when the first voltage or the second voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the concentration decreases more significantly as the absolute value of the voltage within the regulation range increases, and the PL output signal is weakened and falls below the lower threshold;

[0008] Implement the AND gate function: use the input laser as a logic input, and the light on and the absence of light as logic 1 and 0 respectively; use the first voltage or the second voltage as another logic input, and the negative and positive states of the first voltage or the second voltage as logic 1 and 0 respectively; use the PL output signal as the logic output, and the state of the PL output signal being above the upper threshold and below the lower threshold as logic 1 and 0 respectively, to implement the AND gate function;

[0009] Realize the NOR gate function: control the input laser to maintain the input, use the first voltage as a logic input, and use the negative limit and positive limit of the first voltage as logic 1 and 0 respectively; use the second voltage as another logic input, and use the negative and positive limits of the second voltage as logic 1 and 0 respectively; use the PL output signal as the logic output, and the case where the PL output signal is higher than the upper threshold and lower than the lower threshold is regarded as logic 1 and 0 respectively, to realize the NOR gate function.

[0010] The reflectivity of the substrate is 50% or more.

[0011] The photoluminescent layer uses tellurene nanosheets or black phosphorus; the thickness is 5nm to 50nm; the tellurene nanosheets generate photoluminescent signals in the mid-infrared band after being irradiated by incident laser.

[0012] The transparent dielectric layer is made of hexagonal boron nitride, aluminum oxide, silicon dioxide or hafnium dioxide, and has a thickness of 8nm to 100nm.

[0013] The first voltage control range is: negative voltage is -9V to -3V, positive voltage is 3V to 9V; the second voltage control range is: negative voltage is -90V to -30V, positive voltage is 30V to 90V. The polarity of the first voltage or the second voltage changes from negative to positive, and the maximum switching ratio can reach 2 orders of magnitude. The first and second voltage sources are DC sources or AC sources. The AC source has a square wave signal. The minimum negative voltage in the first voltage control range is -9V to -3V, and the maximum positive voltage is 3V to 9V; the minimum negative voltage in the second voltage control range is -90V to -30V, and the maximum positive voltage is 30V to 90V.

[0014] The top gate is made of graphene, molybdenum disulfide or tungsten diselenide, with a thickness of 0.34nm to 10nm, good conductivity, able to transmit the incident laser and no absorption of the PL output signal.

[0015] The external measurement circuit includes a monochromator, a photodetector, a lock-in amplifier, and an optical chopper. The PL output signal is separated from the incident laser light by a spectrometer and fed into the monochromator. The monochromator is connected to the photodetector, whose output is connected to the input of the lock-in amplifier. The modulation signal terminal of the optical chopper is connected to the reference signal terminal of the lock-in amplifier. The output signal of the lock-in amplifier is transmitted to a computer. The spectrometer uses a dichroic mirror or beam splitter. The incident laser light first passes through the optical chopper before being incident on the photoluminescent layer. The optical chopper modulates the light beam passing through the optical chopper at a set frequency and transmits the modulation frequency to the lock-in amplifier. The lock-in amplifier removes electrical noise from the electrical signal based on the modulation frequency provided by the optical chopper, thereby accurately demodulating the signal and reading and collecting the intensity.

[0016] The polarization direction of the PL output signal is fixed; the PL output signal is sensitive to polarization, which makes the transmitted information more free and has a larger amount of information.

[0017] The upper threshold is 60-80% of the maximum intensity of the PL output signal; the lower threshold is 20-40% of the maximum intensity of the PL output signal. The multi-field adjustable high-speed electro-optical logic device of the present invention only realizes the function of an AND gate, and includes: a substrate, an insulating layer, a photoluminescent layer, a ground electrode, and a transparent dielectric layer; wherein the substrate is made of a conductive material with high reflectivity; an insulating layer is provided on the substrate, and the insulating layer is made of an electrically insulating material; a photoluminescent layer and a ground electrode are provided on the insulating layer, respectively, with ohmic contact between the two, and the photoluminescent layer is made of a material that can generate photoluminescence under laser irradiation; a transparent dielectric layer is provided on the photoluminescent layer and the ground electrode, and the transparent dielectric layer is made of a light-transmitting and electrically insulating material; the insulating layer insulates the substrate from the photoluminescent layer; the ground electrode is grounded, the substrate is connected to the positive pole of a voltage source, and the photoluminescent layer and the negative pole of the voltage source are grounded together;

[0018] The input laser wavelength covers the visible and near-infrared bands and is incident on the photoluminescent layer through the top gate and transparent electrolyte layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a photoluminescent (PL) output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The polarization direction of the PL output signal is fixed and the PL output signal is reflected along the reflection direction and received by an external measurement circuit to obtain the signal intensity of the PL output signal.

[0019] By changing the voltage polarity of the substrate through a voltage source, the carrier density of the photoluminescent layer is regulated by electrostatic doping, thereby regulating the PL output signal. When the substrate voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration increase, and the PL output signal is enhanced. When the substrate voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration decreases, and the PL output signal is weakened.

[0020] Realize the AND gate function: use the input laser as a logic input, and the light and no light as logic 1 and 0 respectively; use the voltage of the substrate as another logic input, and the negative extreme and positive extreme of the voltage as logic 1 and 0 respectively; use the PL output signal as the logic output, and the PL output signal above the upper threshold and below the lower threshold as logic 1 and 0 respectively, to realize the AND gate function.

[0021] The photoluminescent layer uses tellurene nanoparticles. The multi-field adjustable high-speed electro-optical logic device of the present invention is placed in a low-temperature cavity. At low temperatures, the mid-infrared PL output signal is strong and the switching ratio is larger.

[0022] Another object of the present invention is to provide a method for realizing a multi-field adjustable high-speed electro-optical logic device.

[0023] The method for realizing a multi-field adjustable high-speed electro-optical logic device of the present invention, wherein the same device realizes the functions of an AND gate or a NOR gate, comprises the following steps:

[0024] 1) Electro-optical logic device settings:

[0025] a) The substrate is made of a conductive material with high reflectivity;

[0026] b) providing an insulating layer on the substrate, wherein the insulating layer is made of an electrically insulating material;

[0027] c) providing a photoluminescent layer and a ground electrode on the insulating layer, respectively, with ohmic contact between the two, and the photoluminescent layer is a material capable of generating photoluminescence by laser irradiation;

[0028] d) providing a transparent dielectric layer on the photoluminescent layer and the ground electrode, wherein the transparent dielectric layer is made of a light-transmitting and electrically insulating material;

[0029] e) providing a top gate on the transparent dielectric layer, wherein the top gate is made of a conductive, light-transmitting material that does not absorb the PL output signal;

[0030] f) an insulating layer insulating the substrate from the photoluminescent layer, and a transparent dielectric layer insulating the photoluminescent layer from the top gate;

[0031] The top gate is used as the first electrode, the substrate is used as the second electrode, the ground electrode is grounded, the first electrode and the second electrode are connected to the positive electrodes of the first voltage source and the second voltage source respectively, and the photoluminescent layer and the negative electrodes of the first voltage source and the second voltage source are grounded in common;

[0032] 2) Generate PL output signal:

[0033] The input laser wavelength covers the visible and near-infrared bands. The input laser passes through the top gate and transparent electrolyte layer and is incident on the photoluminescent layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a photoluminescent (PL) output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The PL output signal is reflected along the reflection direction and received by an external measurement circuit, which determines the signal intensity of the PL output signal.

[0034] 3) Control PL output signal:

[0035] applying a first voltage or a second voltage to the first electrode or the second electrode respectively through a first voltage source or a second voltage source, changing the polarity of the first voltage or the second voltage, and regulating the carrier density of the photoluminescent layer by electrostatic doping, thereby regulating the PL output signal;

[0036] When the first voltage or the second voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration increase, and the PL output signal is enhanced and exceeds the upper threshold;

[0037] When the first voltage or the second voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration decreases, and the PL output signal weakens and falls below the lower threshold;

[0038] 4) Implement AND gate function:

[0039] The input laser is used as a logic input, and the light on and the absence of light are respectively regarded as logic 1 and 0; the first voltage or the second voltage is used as another logic input, and the negative and positive states of the first voltage or the second voltage are respectively regarded as logic 1 and 0; the PL output signal is used as a logic output, and the state of the PL output signal being higher than the upper threshold and lower than the lower threshold is respectively regarded as logic 1 and 0, thereby realizing the AND gate function;

[0040] 5) Implement NOR gate function:

[0041] The control input laser holds the input, with the first voltage as a logic input, and the negative and positive limits of the first voltage as logic 1 and 0 respectively; the second voltage as another logic input, and the negative and positive values ​​of the second voltage as logic 1 and 0 respectively; the PL output signal as a logic output, and the cases where the PL output signal is higher than the upper threshold and lower than the lower threshold are respectively as logic 1 and 0, realizing the NOR gate function.

[0042] The method for implementing a multi-field adjustable high-speed electro-optical logic device of the present invention only realizes the function of an AND gate and includes the following steps: 1) electro-optical logic device setting:

[0043] a) The substrate is made of a conductive material with high reflectivity;

[0044] b) providing an insulating layer on the substrate, wherein the insulating layer is made of an electrically insulating material;

[0045] c) providing a photoluminescent layer and a ground electrode on the insulating layer, respectively, with ohmic contact between the two, and the photoluminescent layer is a material capable of generating photoluminescence by laser irradiation;

[0046] d) providing a transparent dielectric layer on the photoluminescent layer and the ground electrode, wherein the transparent dielectric layer is made of a light-transmitting and electrically insulating material;

[0047] e) an insulating layer insulates the substrate from the photoluminescent layer; the ground electrode is grounded, the substrate is connected to the positive electrode of the voltage source, and the photoluminescent layer and the negative electrode of the voltage source are grounded;

[0048] 2) Generate PL output signal:

[0049] The input laser wavelength covers the visible and near-infrared bands and is incident on the photoluminescent layer through the top gate and transparent electrolyte layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a photoluminescent (PL) output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The polarization direction of the PL output signal is fixed and the PL output signal is reflected along the reflection direction and received by an external measurement circuit to obtain the signal intensity of the PL output signal.

[0050] 3) Control PL output signal:

[0051] By changing the voltage polarity of the substrate through a voltage source, the carrier density of the photoluminescent layer is regulated by electrostatic doping.

[0052] Then regulate the PL output signal;

[0053] When the substrate voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and within the control range, the greater the absolute value of the voltage, the more significant the concentration increase, and the PL output signal is enhanced, exceeding the upper threshold.

[0054] When the substrate voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration decreases, and the PL output signal weakens and falls below the lower threshold.

[0055] 4) Implement AND gate function:

[0056] The input laser is used as a logic input, and the on and off light are used as logic 1 and 0 respectively;

[0057] The voltage of the substrate is used as another logic input, and the negative and positive extremes of the voltage are used as logic 1 and 0 respectively; the PL output signal is used as the logic output, and the cases where the PL output signal is higher than the upper threshold and lower than the lower threshold are used as logic 1 and 0 respectively, realizing the AND gate function.

[0058] Advantages of the present invention:

[0059] The present invention uses an input laser wavelength covering the visible band and near-infrared band, including the main communication band; the mid-infrared PL output signal wavelength is 3.5μm, which matches the atmospheric window and facilitates information transmission; the logic device working on-off ratio is greater than two orders of magnitude, reducing static power consumption, improving anti-interference ability and the accuracy of logical operations; the response time is less than 1.5μs (limited by the detector), and the actual response time corresponds to the carrier recombination relaxation process, which can reach the nanosecond level, playing a key role in improving the overall computing speed. When the frequency of the logic input is high, the logic gate of the present invention has a short response time and fast speed, supporting high-frequency operation; the PL output signal is sensitive to polarization, which makes the transmitted information more free and with a larger amount of information; the present invention is applied to fields such as encrypted transmission of efficient optical communications and logical operations in all-optical chips; it not only exhibits a working on-off ratio of up to 2 orders of magnitude, but also can maintain a response speed of nanoseconds, making it very potential to solve difficult problems in scientific and technological fields such as encrypted transmission of efficient mid-infrared optical communications. BRIEF DESCRIPTION OF THE DRAWINGS

[0060] Figure 1 An optical microscope image of an embodiment of a multi-field tunable high-speed electro-optical logic device of the present invention;

[0061] Figure 2 Schematic cross-sectional view of an embodiment of a multi-field tunable high-speed electro-optical logic device of the present invention;

[0062] Figure 3 A schematic diagram of an AND gate for realizing the multi-field adjustable high-speed electro-optical logic device of the present invention;

[0063] Figure 4 This is a schematic diagram of a NOR gate implemented in the multi-field adjustable high-speed electro-optical logic device of the present invention. DETAILED DESCRIPTION

[0064] The present invention will be further described below through specific embodiments in conjunction with the accompanying drawings.

[0065] The tellurene nanosheets of this embodiment are prepared by a hydrothermal method, which includes the following steps:

[0066] 1) Dissolve 3 g of polyvinylpyrrolidone (PVP, molecular weight = 58,000) in 32 mL of deionized water (DL); add 92 mg of Na2TeO3 to the PVP solution while stirring continuously;

[0067] 2) Add 3.32 mL of ammonia water and 1.68 mL of hydrazine hydrate. After 5 minutes of magnetic stirring, transfer the solution to a stainless steel autoclave lined with polytetrafluoroethylene and heat to 180°C for 10 hours.

[0068] 3) Rinse with deionized water to remove other ions;

[0069] 4) The Te nanosheets were redispersed in ethanol and transferred onto a 285 nm SiO2 / Si substrate using a drop coating method.

[0070] The prepared tellurene nanosheets were transferred onto a 285 nm thick SiO2 / Si substrate by drop casting.

[0071] In this embodiment, the same device realizes the function of an AND gate or a NOR gate.

[0072] like Figure 1 and 2As shown, the multi-field adjustable high-speed electro-optical logic device of this embodiment includes: a substrate, an insulating layer, a photoluminescent layer, a ground electrode, a transparent dielectric layer and a top gate; wherein the substrate is made of silicon, which is a conductor and has high reflectivity; an insulating layer is provided on the substrate, and the insulating layer is made of electrically insulating silicon dioxide, and the thickness of SiO2 / Si is 285nm; a photoluminescent layer and a ground electrode are respectively provided on the insulating layer, and ohmic contact is formed between the two; the photoluminescent layer is made of tellurene nanosheets, and the thickness is nanometer-scale, and the tellurene nanosheets have a series of parallel one-dimensional spiral atomic chain structures, the atomic chain extending in the c-axis direction, and the mutually perpendicular a-axis and c-axis are located in the tellurene nanosheet surface; the electrode pattern is defined by electron beam lithography technology, and then deposited by electron beam evaporation A Ti / Pd / Au metal layer is formed to form a ground electrode; a transparent dielectric layer is arranged on the photoluminescent layer and the ground electrode, and the transparent dielectric layer is made of hexagonal boron nitride with a thickness of 8nm; a top gate is arranged on the transparent dielectric layer, and the top gate is made of a graphene thin layer with a thickness of 0.34nm, which has good conductivity, can transmit the incident laser and has no absorption of the PL output signal; the insulating layer insulates the substrate from the photoluminescent layer, and the transparent dielectric layer insulates the photoluminescent layer from the top gate; the top gate is used as the first electrode, the substrate is used as the second electrode, the ground electrode is grounded, the first electrode and the second electrode are respectively connected to the positive electrodes of the first voltage source and the second voltage source, and the photoluminescent layer is grounded with the negative electrodes of the first voltage source and the second voltage source through the ground electrode.

[0073] The input laser wavelength covers the visible band and the near-infrared band and is a continuous laser with a power setting of 170μW; it is placed in a low-temperature cavity and the device temperature is controlled at 25K using liquid helium. At low temperatures, the mid-infrared PL output signal is strong and the switching ratio is larger; the input laser is incident on the photoluminescent layer through the top gate and the transparent electrolyte layer; the electrons in the valence band of the tellurene nanosheet transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a mid-infrared photoluminescence PL output signal corresponding to the band gap; the mid-infrared PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of the carrier recombination luminescence, reaching the nanosecond level; and the polarization direction of the mid-infrared PL output signal is fixed, always along the a-axis direction of the tellurene nanosheet; the mid-infrared PL output signal is reflected along the reflection direction and received by an external measurement circuit to obtain the signal intensity of the mid-infrared PL output signal.

[0074] A first voltage source or a second voltage source is used to apply a first voltage or a second voltage to the first electrode or the second electrode respectively, thereby changing the polarity of the first voltage or the second voltage and regulating the carrier density of the photoluminescent layer by electrostatic doping, thereby regulating the mid-infrared PL output signal. When the first voltage or the second voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and the concentration increase is more significant as the absolute value of the voltage within the control range increases, and the mid-infrared PL output signal is enhanced and exceeds the upper threshold. When the first voltage or the second voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the concentration decreases more significant as the absolute value of the voltage within the control range increases, and the mid-infrared PL output signal is weakened and falls below the lower threshold. The maximum on-off ratio can reach two orders of magnitude; the upper threshold is 70% of the maximum intensity; and the lower threshold is 30% of the maximum intensity.

[0075] The external measurement circuit includes a monochromator, a photodetector, a lock-in amplifier, and an optical chopper. The PL output signal is separated from the incident laser light by a spectrometer and fed into the monochromator. The monochromator is connected to the photodetector, whose output is connected to the input of the lock-in amplifier. The modulation signal terminal of the optical chopper is connected to the reference signal terminal of the lock-in amplifier. The output signal of the lock-in amplifier is transmitted to a computer. The spectrometer uses a dichroic mirror or beam splitter. The incident laser light first passes through the optical chopper before being incident on the photoluminescent layer. The optical chopper modulates the light beam passing through the optical chopper at a set frequency and transmits the modulation frequency to the lock-in amplifier. The lock-in amplifier removes electrical noise from the electrical signal based on the modulation frequency provided by the optical chopper, thereby accurately demodulating the signal and reading and collecting the intensity.

[0076] like Figure 3 As shown, the AND gate function is realized: the input laser is used as a logic input, and the light and no light are used as logic 1 and 0 respectively; the first voltage or the second voltage is used as the other logic input, and the first voltage of -6V or the second voltage of -60V is used as logic 1, and the first voltage of +6V or the second voltage of +60V is used as logic 0; the mid-infrared PL output signal is used as the logic output, and the mid-infrared PL output signal is higher than the upper threshold and lower than the lower threshold as logic 1 and 0 respectively, realizing the AND gate function; the truth table is as follows:

[0077]

[0078] like Figure 4As shown, the NOR gate function is realized: the input laser is controlled to hold the input, the first voltage is used as a logic input, and the first voltage of -6V and +6V are used as logic 1 and 0 respectively; the second voltage is used as another logic input, and the second voltage of -60V and +60V are used as logic 1 and 0 respectively; the mid-infrared PL output signal is used as the logic output, and the mid-infrared PL output signal is higher than the upper threshold and lower than the lower threshold as logic 1 and 0 respectively, realizing the NOR gate function; the truth table is as follows:

[0079]

[0080] Finally, it should be noted that the purpose of disclosing the embodiments is to facilitate a further understanding of the present invention. However, those skilled in the art will appreciate that various substitutions and modifications are possible without departing from the spirit and scope of the present invention and the appended claims. Therefore, the present invention should not be limited to the contents disclosed in the embodiments; the scope of protection claimed by the present invention shall be determined by the scope defined in the claims.

Claims

1. A multi-field adjustable high-speed electro-optical logic device, wherein the same device realizes the functions of an AND gate or a NOR gate, characterized in that: The electro-optical logic device comprises: a substrate, an insulating layer, a photoluminescent layer, a ground electrode, a transparent dielectric layer and a top gate; The invention relates to a method for manufacturing a substrate comprising: a substrate made of a conductive material with high reflectivity; an insulating layer made of an electrically insulating material is provided on the substrate; a photoluminescent layer and a ground electrode are provided on the insulating layer, the two being in ohmic contact with each other, and the photoluminescent layer is made of a material capable of generating photoluminescence when irradiated by laser; a transparent dielectric layer is provided on the photoluminescent layer and the ground electrode, the transparent dielectric layer being made of a light-transmitting and electrically insulating material; a top gate is provided on the transparent dielectric layer, the top gate being made of a conductive, light-transmitting material that does not absorb the photoluminescent (PL) output signal; the insulating layer insulates the substrate from the photoluminescent layer, and the transparent dielectric layer insulates the photoluminescent layer from the top gate; the top gate serves as a first electrode, the substrate serves as a second electrode, the ground electrode is grounded, the first electrode and the second electrode are connected to the positive electrodes of a first voltage source and a second voltage source, respectively, and the photoluminescent layer shares a common ground with the negative electrodes of the first and second voltage sources; The input laser wavelength covers the visible and near-infrared bands. The input laser passes through the top gate and transparent electrolyte layer and is incident on the photoluminescent layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a PL output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The PL output signal is received by an external measurement circuit, which determines the signal intensity of the PL output signal. A first voltage or a second voltage is applied to the first electrode or the second electrode respectively by a first voltage source or a second voltage source, and the polarity of the first voltage or the second voltage is changed to regulate the carrier density of the photoluminescent layer by electrostatic doping, thereby regulating the PL output signal; when the first voltage or the second voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and the concentration increases more significantly as the absolute value of the voltage within the regulation range increases, and the PL output signal is enhanced and exceeds the upper threshold; when the first voltage or the second voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the concentration decreases more significantly as the absolute value of the voltage within the regulation range increases, and the PL output signal is weakened and falls below the lower threshold; Implement the AND gate function: use the input laser as a logic input, and the light on and the absence of light as logic 1 and 0 respectively; use the first voltage or the second voltage as another logic input, and the negative and positive states of the first voltage or the second voltage as logic 1 and 0 respectively; use the PL output signal as the logic output, and the state of the PL output signal being above the upper threshold and below the lower threshold as logic 1 and 0 respectively, to implement the AND gate function; Realize the NOR gate function: control the input laser to maintain the input, use the first voltage as a logic input, and use the negative limit and positive limit of the first voltage as logic 1 and 0 respectively; use the second voltage as another logic input, and use the negative and positive limits of the second voltage as logic 1 and 0 respectively; use the PL output signal as the logic output, and the case where the PL output signal is higher than the upper threshold and lower than the lower threshold is regarded as logic 1 and 0 respectively, to realize the NOR gate function.

2. A high-speed electro-optical logic device with multiple adjustable fields, which only realizes the function of an AND gate, characterized in that: The electro-optical logic device comprises: a substrate, an insulating layer, a photoluminescent layer, a ground electrode, and a transparent dielectric layer; wherein the substrate is made of a conductive material with high reflectivity; an insulating layer is provided on the substrate, and the insulating layer is made of an electrically insulating material; a photoluminescent layer and a ground electrode are provided on the insulating layer, respectively, with ohmic contact between the two, and the photoluminescent layer is made of a material capable of generating photoluminescence upon laser irradiation; a transparent dielectric layer is provided on the photoluminescent layer and the ground electrode, and the transparent dielectric layer is made of a light-transmitting and electrically insulating material; the insulating layer insulates the substrate from the photoluminescent layer; the ground electrode is grounded, the substrate is connected to the positive electrode of a voltage source, and the photoluminescent layer and the negative electrode of the voltage source are grounded together; The input laser wavelength covers the visible and near-infrared bands. The input laser passes through the top gate and transparent electrolyte layer and is incident on the photoluminescent layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a photoluminescent (PL) output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The PL output signal is received by an external measurement circuit, which determines the signal intensity of the PL output signal. By changing the voltage polarity of the substrate through a voltage source, the carrier density of the photoluminescent layer is regulated by electrostatic doping, thereby regulating the PL output signal. When the substrate voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration increase, and the PL output signal is enhanced. When the substrate voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration decreases, and the PL output signal is weakened. Realize the AND gate function: use the input laser as a logic input, and the light and no light as logic 1 and 0 respectively; use the voltage of the substrate as another logic input, and the negative extreme and positive extreme of the voltage as logic 1 and 0 respectively; use the PL output signal as the logic output, and the PL output signal above the upper threshold and below the lower threshold as logic 1 and 0 respectively, to realize the AND gate function.

3. The electro-optical logic device according to claim 1 or 2, wherein: The photoluminescent layer is made of tellurene nanosheets or black phosphorus and has a thickness of 5nm to 50nm.

4. The electro-optical logic device according to claim 1 or 2, wherein: The transparent dielectric layer is made of hexagonal boron nitride, aluminum oxide, silicon dioxide or hafnium dioxide, and has a thickness of 10 nm to 100 nm.

5. The electro-optical logic device according to claim 1, wherein: The control range of the first voltage is: negative voltage is -9V to -3V, and positive voltage is 3V to 9V; the control range of the second voltage is: negative voltage is -90V to -30V, and positive voltage is 30V to 90V.

6. The electro-optical logic device according to claim 1, wherein: The top gate is made of graphene, molybdenum disulfide or tungsten diselenide, and has a thickness of 0.34nm to 10nm.

7. The electro-optical logic device according to claim 1 or 2, wherein: The external measurement circuit includes: a monochromator, a light detector, a lock-in amplifier, and an optical chopper; wherein the PL output signal is separated from the incident laser by a spectroscopic element and enters the monochromator; the monochromator is connected to the light detector, the output end of the light detector is connected to the input end of the lock-in amplifier, and the modulation signal end of the optical chopper is connected to the reference signal end of the lock-in amplifier; the output signal of the lock-in amplifier is transmitted to a computer.

8. A method for realizing the multi-field adjustable high-speed electro-optical logic device according to claim 1, wherein the same device realizes the function of an AND gate or a NOR gate, characterized in that: The implementation method comprises the following steps: 1) Electro-optical logic device settings: a) The substrate is made of a conductive material with high reflectivity; b) providing an insulating layer on the substrate, wherein the insulating layer is made of an electrically insulating material; c) providing a photoluminescent layer and a ground electrode on the insulating layer, respectively, with ohmic contact between the two, and the photoluminescent layer is a material capable of generating photoluminescence by laser irradiation; d) providing a transparent dielectric layer on the photoluminescent layer and the ground electrode, wherein the transparent dielectric layer is made of a light-transmitting and electrically insulating material; e) providing a top gate on the transparent dielectric layer, wherein the top gate is made of a conductive, light-transmitting material that does not absorb the PL output signal; f) an insulating layer insulating the substrate from the photoluminescent layer, and a transparent dielectric layer insulating the photoluminescent layer from the top gate; the top gate serves as a first electrode, the substrate serves as a second electrode, the ground electrode is grounded, the first electrode and the second electrode are connected to the positive electrodes of a first voltage source and a second voltage source, respectively, and the photoluminescent layer and the negative electrodes of the first voltage source and the second voltage source share a common ground; 2) Generate PL output signal: The input laser wavelength covers the visible and near-infrared bands. The input laser passes through the top gate and transparent electrolyte layer and is incident on the photoluminescent layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a photoluminescent (PL) output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The PL output signal is received by an external measurement circuit, which determines the signal intensity of the PL output signal. 3) Control PL output signal: applying a first voltage or a second voltage to the first electrode or the second electrode respectively through a first voltage source or a second voltage source, changing the polarity of the first voltage or the second voltage, and regulating the carrier density of the photoluminescent layer by electrostatic doping, thereby regulating the PL output signal; When the first voltage or the second voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration increase, and the PL output signal is enhanced and exceeds the upper threshold; When the first voltage or the second voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration decreases, and the PL output signal weakens and falls below the lower threshold; 4) Implement AND gate function: The input laser is used as a logic input, and the light on and the absence of light are respectively used as logic 1 and 0; the first voltage or the second voltage is used as another logic input, and the negative and positive of the first voltage or the second voltage are respectively used as logic 1 and 0; The PL output signal is used as the logic output. When the PL output signal is higher than the upper threshold and lower than the lower threshold, it is regarded as logic 1 and 0 respectively, realizing the AND gate function. 5) Implement NOR gate function: 6) Control the input laser hold input, use the first voltage as a logic input, and use the negative limit and positive limit of the first voltage as logic 1 and 0 respectively; use the second voltage as another logic input, and use the negative and positive limits of the second voltage as logic 1 and 0 respectively; use the PL output signal as the logic output, and use the PL output signal higher than the upper threshold and lower than the lower threshold as logic 1 and 0 respectively, to realize the NOR gate function.

9. A method for realizing a multi-field adjustable high-speed electro-optical logic device as claimed in claim 2, which only realizes the function of an AND gate, characterized in that: The implementation method comprises the following steps: 1) Electro-optical logic device settings: a) The substrate is made of a conductive material with high reflectivity; b) providing an insulating layer on the substrate, wherein the insulating layer is made of an electrically insulating material; c) providing a photoluminescent layer and a ground electrode on the insulating layer, respectively, with ohmic contact between the two, and the photoluminescent layer is a material capable of generating photoluminescence by laser irradiation; d) providing a transparent dielectric layer on the photoluminescent layer and the ground electrode, wherein the transparent dielectric layer is made of a light-transmitting and electrically insulating material; e) an insulating layer insulates the substrate from the photoluminescent layer; the ground electrode is grounded, the substrate is connected to the positive electrode of the voltage source, and the photoluminescent layer and the negative electrode of the voltage source are grounded; 2) Generate PL output signal: The input laser wavelength covers the visible and near-infrared bands. The input laser is incident on the photoluminescent layer through the top gate and transparent electrolyte layer. Electrons in the valence band of the photoluminescent layer transition to the conduction band and then relax to the bottom of the conduction band, where electron-hole recombination occurs, generating a photoluminescent (PL) output signal corresponding to the band gap. The PL output signal is proportional to the carrier density, and the response time corresponds to the relaxation time of carrier recombination luminescence, reaching the nanosecond level. The polarization direction of the PL output signal is fixed. The PL output signal is received by an external measurement circuit, which determines the signal intensity of the PL output signal. 3) Control PL output signal: By changing the voltage polarity of the substrate through a voltage source, the carrier density of the photoluminescent layer is regulated by electrostatic doping. Then regulate the PL output signal; When the substrate voltage is negative, the carrier concentration of the photoluminescent layer increases relative to the initial state, and within the control range, the greater the absolute value of the voltage, the more significant the concentration increase, and the PL output signal is enhanced, exceeding the upper threshold. When the substrate voltage is positive, the carrier concentration of the photoluminescent layer decreases relative to the initial state, and the greater the absolute value of the voltage within the control range, the more significant the concentration decreases, and the PL output signal weakens and falls below the lower threshold. 4) Implement AND gate function: The input laser is used as a logic input, and the on and off light are used as logic 1 and 0 respectively; The voltage of the substrate is used as another logic input, and the negative and positive extremes of the voltage are used as logic 1 and 0 respectively; the PL output signal is used as the logic output, and the cases where the PL output signal is higher than the upper threshold and lower than the lower threshold are used as logic 1 and 0 respectively, realizing the AND gate function.

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