Thermal radiation and microwave collaborative intelligent regulation and control device structure and preparation method thereof

Abstract

The invention discloses a thermal radiation and microwave collaborative intelligent regulation device structure and a preparation method thereof, and belongs to the field of electromagnetic wave intelligent regulation. The problem that an existing device is difficult to achieve dynamic decoupling and coupling regulation and control between infrared and microwave bands is solved. The invention discloses a thermal radiation and microwave collaborative intelligent regulation and control device structure, which consists of a top VO2 layer, a SiO2 layer and a bottom VO2 layer in sequence from top to bottom. The preparation method comprises the following steps: 1, pretreatment; and 2, preparing a VO2 layer. The invention is used for the thermal radiation and microwave collaborative intelligent regulation and control device structure and the preparation thereof.

Description

Technical Field

[0001] The present invention belongs to the field of intelligent control of electromagnetic waves. Background Art

[0002] With the increasing demand for multifunctional devices, the development of new materials and structures capable of efficient and dynamic control across multiple electromagnetic bands has become a research hotspot. Efficient control in the infrared and microwave bands not only improves thermal management capabilities but also provides greater adaptability and flexibility in areas such as communications, stealth, and anti-interference. Traditional multi-band control methods typically rely on metasurface structures or composite materials. Metamaterial structures achieve electromagnetic wave control across different bands by adjusting the physical parameters of the material. However, these structures are complex to design and difficult to fabricate, and they rely primarily on static properties, making them difficult to adapt to real-time and dynamic demands. Composite materials are typically composed of multiple materials. Although composite materials can combine materials with different properties to enhance certain characteristics, these composite materials lack flexibility in dynamic control. Despite some research progress in dynamic control, significant challenges remain. Existing materials struggle to achieve effective coordinated control between the infrared and microwave bands, and avoiding interference between bands amidst the synergistic effects of multiple bands presents a technical challenge. In recent years, with the development of smart materials, especially the introduction of vanadium oxide (VO2), researchers have discovered that this material possesses a unique property of undergoing a metal-insulator transition (MIT) at a certain temperature, giving it great potential for multi-band electromagnetic control. The phase transition effect of VO2 offers new insights into control in the infrared and microwave bands. However, existing research has largely focused on dynamic control in a single band. Achieving dynamic decoupling and coupled control between the infrared and microwave bands remains a key challenge. Summary of the Invention

[0003] The present invention aims to solve the problem that existing devices are difficult to achieve dynamic decoupling and coupling regulation between infrared and microwave bands, and further provide a device structure and a preparation method for collaborative intelligent regulation of thermal radiation and microwaves.

[0004] A device structure for intelligent control of thermal radiation and microwaves, which consists of a top VO2 layer, a SiO2 layer, and a bottom VO2 layer from top to bottom;

[0005] When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for infrared-dominated decoupling control, the thickness of the top VO2 layer is 250nm~400nm, the thickness of the SiO2 layer is greater than 100μm, and the thickness of the bottom VO2 layer is less than 300nm;

[0006] When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for microwave-dominated decoupling control, the thickness of the top VO2 layer is 30nm~70nm, the thickness of the SiO2 layer is 1mm~6mm, and the thickness of the bottom VO2 layer is 1100nm~1500nm;

[0007] When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for infrared and microwave coupling control, the thickness of the top VO2 layer is 250nm~400nm, the thickness of the SiO2 layer is 2mm~4mm, and the thickness of the bottom VO2 layer is 1100nm~1500nm.

[0008] A method for preparing a device structure for intelligently controlling thermal radiation and microwaves is carried out according to the following steps:

[0009] 1. Preprocessing:

[0010] Ultrasonic cleaning and drying of the quartz substrate to obtain a pretreated quartz substrate;

[0011] 2. VO2 layer preparation:

[0012] Using high-energy pulsed magnetron sputtering technology, VO2 films of different thicknesses are deposited on both sides of the pre-treated quartz substrate, and finally annealed to obtain a device structure with coordinated intelligent control of thermal radiation and microwaves.

[0013] The beneficial effects of the present invention are:

[0014] This invention effectively manipulates electromagnetic properties in both the infrared and microwave bands. Targeted to practical needs, it leverages the temperature-driven metal-insulator transition (MIT) properties of VO2 material, enabling the structure to exhibit a dynamic electromagnetic response that varies with temperature. By adjusting the thickness of each layer, the infrared and microwave performance can be continuously adjusted from "functional decoupling" to "response coupling." This overcomes the design limitations of traditional electromagnetic structures, which often impose fixed coupling between bands, and meets the demands for multi-band electromagnetic control in diverse application scenarios. By configuring structural parameters, the infrared and microwave bands can be independently or collaboratively controlled based on temperature variations, ensuring efficient and stable electromagnetic control of the infrared and microwave bands under varying temperature conditions while avoiding mutual interference between the bands. Compared to existing technologies, this invention demonstrates enhanced temperature-driven control capabilities, further advancing the development of electromagnetic control technology and providing reliable technical support for a wider range of applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the structure of the device for intelligently controlling thermal radiation and microwaves in accordance with the present invention;

[0016] Figure 2Curves showing changes in infrared emissivity and microwave shielding performance with wavelength for the device structure for intelligent coordinated control of thermal radiation and microwaves prepared in Example 1. 1 is the infrared emissivity curve at 25°C, 2 is the infrared emissivity curve at 100°C, 3 is the average microwave shielding performance curve at 25°C, and 4 is the average microwave shielding performance curve at 100°C.

[0017] Figure 3 Curves showing changes in infrared emissivity and microwave shielding performance with wavelength for the device structure for intelligent coordinated control of thermal radiation and microwaves prepared in Example 2, where 1 is the infrared emissivity curve at 25°C, 2 is the infrared emissivity curve at 100°C, 3 is the average microwave shielding performance curve at 25°C, and 4 is the average microwave shielding performance curve at 100°C;

[0018] Figure 4 The infrared emissivity and microwave shielding performance curves of the device structure for intelligent coordinated control of thermal radiation and microwaves prepared in Example 3 are as a function of wavelength. 1 is the infrared emissivity curve at 25°C, 2 is the infrared emissivity curve at 100°C, 3 is the average microwave shielding performance curve at 25°C, and 4 is the average microwave shielding performance curve at 100°C. DETAILED DESCRIPTION

[0019] Specific implementation method 1, combined with Figure 1 Specific description: This embodiment is a device structure for intelligent control of thermal radiation and microwaves, which is composed of a top VO2 layer, a SiO2 layer and a bottom VO2 layer from top to bottom;

[0020] When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for infrared-dominated decoupling control, the thickness of the top VO2 layer is 250nm~400nm, the thickness of the SiO2 layer is greater than 100μm, and the thickness of the bottom VO2 layer is less than 300nm;

[0021] When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for microwave-dominated decoupling control, the thickness of the top VO2 layer is 30nm~70nm, the thickness of the SiO2 layer is 1mm~6mm, and the thickness of the bottom VO2 layer is 1100nm~1500nm;

[0022] When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for infrared and microwave coupling control, the thickness of the top VO2 layer is 250nm~400nm, the thickness of the SiO2 layer is 2mm~4mm, and the thickness of the bottom VO2 layer is 1100nm~1500nm.

[0023] This specific embodiment realizes three typical multi-band control modes by systematically controlling the structural geometric parameters.

[0024] (1) Infrared-dominated decoupling design: In the infrared band (8μm~14μm), the surface temperature of the device is adjusted to achieve a large-scale regulation of the infrared emissivity, while the microwave shielding response changes slightly.

[0025] (2) Microwave-dominated decoupling design: In the microwave band (8.2 GHz to 18 GHz), the surface temperature of the device is adjusted to achieve a large-scale regulation of the shielding performance, while the infrared emissivity changes slightly.

[0026] (3) Infrared and microwave coupling design: As the surface temperature of the device changes, the responses of the infrared (8μm~14μm) and microwave (8.2GHz~18GHz) bands change significantly.

[0027] This continuous control method from "functional decoupling" to "response coupling" breaks the inherent coupling limitations between responses of different bands in traditional electromagnetic structures, and significantly improves the freedom and adaptability of multi-band electromagnetic control.

[0028] The beneficial effects of this embodiment are:

[0029] This embodiment effectively manipulates electromagnetic properties in the infrared and microwave bands. Focusing on practical needs, it leverages the temperature-driven metal-insulator transition (MIT) properties of VO2 materials, enabling the structure to exhibit a dynamic electromagnetic response that varies with temperature. By adjusting the thickness of each layer, the infrared and microwave bands can be continuously adjusted from "functional decoupling" to "response coupling." This overcomes the design limitations of traditional electromagnetic structures, which often impose fixed associations between bands, and meets the demands for multi-band electromagnetic control in diverse application scenarios. By configuring structural parameters, the infrared and microwave bands can be independently or collaboratively controlled based on temperature variations, ensuring efficient and stable electromagnetic control of the infrared and microwave bands under varying temperature conditions while avoiding mutual interference between the bands. Compared to existing technologies, this embodiment demonstrates stronger temperature-driven control capabilities, further advancing the development of electromagnetic control technology and providing reliable technical support for a wider range of applications.

[0030] Specific embodiment 2: This embodiment differs from specific embodiment 1 in that the infrared-dominated decoupling control specifically achieves an emissivity change of 0.4-0.6 before and after the phase transition in the infrared band of 8μm-14μm. In the microwave band of 8.2GHz-18GHz, the average shielding performance before the phase transition is 1dB-5dB, and the average shielding performance after the phase transition is 8dB-15dB. Other aspects are the same as specific embodiment 1.

[0031] Specific embodiment three: This embodiment differs from either specific embodiment one or two in that the microwave-dominated decoupling control specifically achieves an emissivity change of 0.01-0.1 before and after the phase transition in the infrared band of 8μm-14μm. In the microwave band of 8.2GHz-18GHz, the average shielding performance before the phase transition is 1dB-5dB, and after the phase transition is 20dB-25dB. Other aspects are the same as specific embodiments one or two.

[0032] Specific embodiment 4: This embodiment differs from Specific embodiments 1 to 3 in that the infrared and microwave coupling control is specifically implemented in the infrared band of 8μm to 14μm, with an emissivity change of 0.4 to 0.6 before and after the phase transition. In the microwave band of 8.2GHz to 18GHz, the average shielding performance before the phase transition is 1dB to 5dB, and the average shielding performance after the phase transition is 21dB to 35dB. Other aspects are the same as Specific embodiments 1 to 3.

[0033] Specific embodiment 5: This embodiment differs from specific embodiments 1 to 4 in that the top VO2 layer and the bottom VO2 layer are VO2 or element-doped VO2. It is the same as specific embodiments 1 to 4.

[0034] Specific embodiment 6: This embodiment provides a method for preparing a device structure for intelligently controlling thermal radiation and microwaves, which is carried out in the following steps:

[0035] 1. Preprocessing:

[0036] Ultrasonic cleaning and drying of the quartz substrate to obtain a pretreated quartz substrate;

[0037] 2. VO2 layer preparation:

[0038] Using high-energy pulsed magnetron sputtering technology, VO2 films of different thicknesses are deposited on both sides of the pre-treated quartz substrate, and finally annealed to obtain a device structure with coordinated intelligent control of thermal radiation and microwaves.

[0039] Specific Embodiment 7: This embodiment differs from Specific Embodiment 6 in that the ultrasonic cleaning and drying described in step 1 are specifically performed as follows: the quartz substrate is ultrasonically cleaned in deionized water, ethanol, and acetone, respectively, at a power of 50W to 300W for 10 to 20 minutes, followed by drying with nitrogen gas to obtain a pretreated quartz substrate. Other steps are the same as Specific Embodiment 6.

[0040] Specific embodiment eight: This embodiment differs from either specific embodiment six or seven in that: in step two, high-energy pulse magnetron sputtering technology is used at a frequency of 400 Hz to 450 Hz, a pulse width of 50 μs to 100 μs, a power of 180 w to 200 w, and a background vacuum of 5×10 -4 Pa~1×10 -5 VO2 thin films of varying thicknesses were deposited on both sides of a pretreated quartz substrate under the following conditions: a deposition pressure of 0.4 Pa to 0.9 Pa, an argon flow rate of 80 sccm to 100 sccm, an oxygen flow rate of 0.4 sccm to 2.0 sccm, and a substrate temperature of 200°C to 400°C. Other steps are the same as those in the sixth or seventh embodiment.

[0041] Specific embodiment 9: This embodiment differs from specific embodiments 6 to 8 in that the annealing in step 2 is carried out in an argon atmosphere at a temperature of 200° C. to 600° C. for 2 to 6 hours. Other aspects are the same as specific embodiments 6 to 8.

[0042] Specific embodiment 10: This embodiment differs from any one of specific embodiments 6 to 9 in that in step 2, the temperature is raised to 200°C to 600°C at a rate of 3°C / min to 5°C / min under an argon atmosphere. Other aspects are the same as specific embodiments 6 to 9.

[0043] The following examples are used to verify the beneficial effects of the present invention:

[0044] Example 1:

[0045] A device structure for intelligent control of thermal radiation and microwaves, which consists of a top VO2 layer, a SiO2 layer, and a bottom VO2 layer from top to bottom;

[0046] The device structure of thermal radiation and microwave collaborative intelligent control is used for infrared-dominated decoupling control. The thickness of the top VO2 layer is 300nm, the thickness of the SiO2 layer is 3mm, and the thickness of the bottom VO2 layer is 50nm.

[0047] The top VO2 layer and the bottom VO2 layer are both VO2.

[0048] The method for preparing the device structure for the above-mentioned intelligent control of thermal radiation and microwave collaboration is carried out according to the following steps:

[0049] 1. Preprocessing:

[0050] Ultrasonic cleaning and drying of the quartz substrate to obtain a pretreated quartz substrate;

[0051] 2. VO2 layer preparation:

[0052] Using high-energy pulse magnetron sputtering technology, the frequency was 450 Hz, the pulse width was 50 μs, the power was 180 W, and the background vacuum was 5×10 -4 Under the conditions of 0.9Pa, deposition pressure of 0.9Pa, argon flow rate of 80sccm, oxygen flow rate of 0.5ccm and substrate temperature of 400℃, VO2 films of different thicknesses were deposited on both sides of the pretreated quartz substrate, and finally annealed to obtain a device structure with coordinated intelligent control of thermal radiation and microwaves, namely VO2 / SiO2 / VO2 device.

[0053] The ultrasonic cleaning and drying described in step 1 are specifically carried out according to the following steps: under the condition of a power of 300W, the quartz substrate is placed in deionized water, ethanol and acetone in turn and ultrasonically cleaned for 15 minutes respectively, and then dried with nitrogen to obtain a pretreated quartz substrate.

[0054] The annealing in step 2 is specifically to raise the temperature to 500° C. at a heating rate of 5° C. / min under an argon atmosphere, and to perform the annealing treatment under the conditions of an argon atmosphere and a temperature of 500° C. for 4 hours.

[0055] Example 2: This example differs from Example 1 in that the device structure for intelligently controlling thermal radiation and microwaves is used for microwave-dominated decoupling control. The thickness of the top VO2 layer is 50 nm, the thickness of the SiO2 layer is 3 mm, and the thickness of the bottom VO2 layer is 1100 nm. Other configurations are the same as Example 1.

[0056] Example 3: This example differs from Example 1 in that the device structure for intelligently controlling thermal radiation and microwaves is used for infrared and microwave coupled control. The thickness of the top VO2 layer is 300nm, the thickness of the SiO2 layer is 3mm, and the thickness of the bottom VO2 layer is 1100nm. Other configurations are the same as Example 1.

[0057] Using an IR / Vertex-70 Fourier transform infrared spectrometer and a variable temperature system, the device structures for intelligent coordinated control of thermal radiation and microwaves in Examples 1 to 3 were tested for variable temperature (25°C and 100°C) spectral reflectance (8μm~14μm) curves, and Kirchhoff's law was used to plot their emissivity curves.

[0058] A vector network analyzer (VNA, Ceyear 3672C) was used to test the shielding performance of the device structures for intelligent coordinated control of thermal radiation and microwaves in Examples 1 to 3 using a waveguide method within the X and Ku band frequency range of 8.2 GHz to 18 GHz, and the sample temperature was calibrated with a thermocouple.

[0059] Figure 2Curves of infrared emissivity and microwave shielding performance of the device structure for intelligent coordinated control of thermal radiation and microwaves prepared in Example 1 as a function of wavelength, 1 is the infrared emissivity curve at 25°C, 2 is the infrared emissivity curve at 100°C, 3 is the average microwave shielding performance curve at 25°C, and 4 is the average microwave shielding performance curve at 100°C; the device structure for intelligent coordinated control of thermal radiation and microwaves in Example 1 is used for infrared-dominated decoupling control, and the emissivity values ​​in the infrared band (8μm~14μm) at 25°C and 100°C are 0.82 and 0.28, respectively, and the emissivity change before and after the phase change is 0.54; in the microwave band of 8.2GHz~18GHz, the average shielding performance at 25°C and 100°C is 4dB and 11.1dB, respectively

[0060] Figure 3 Curves of infrared emissivity and microwave shielding performance as a function of wavelength for the device structure for intelligent coordinated control of thermal radiation and microwaves prepared in Example 2, 1 is the infrared emissivity curve at 25°C, 2 is the infrared emissivity curve at 100°C, 3 is the average microwave shielding performance curve at 25°C, and 4 is the average microwave shielding performance curve at 100°C; the device structure for intelligent coordinated control of thermal radiation and microwaves in Example 2 is used for microwave-dominated decoupling control, and the emissivity values ​​in the infrared band (8μm~14μm) at 25°C and 100°C are 0.86 and 0.83 respectively, and the emissivity change before and after the phase change is 0.03; in the microwave band of 8.2GHz~18GHz, the average shielding performance at 25°C and 100°C are 4dB and 21dB respectively.

[0061] Figure 4 The infrared emissivity and microwave shielding performance curves of the device structure for intelligent coordinated control of thermal radiation and microwaves prepared in Example 3 are as inversely proportional to the wavelength, 1 is the infrared emissivity curve at 25°C, 2 is the infrared emissivity curve at 100°C, 3 is the average microwave shielding performance curve at 25°C, and 4 is the average microwave shielding performance curve at 100°C; the device structure for intelligent coordinated control of thermal radiation and microwaves in Example 3 is used for infrared and microwave coupling control, and the emissivity values ​​in the infrared band (8μm~14μm) at 25°C and 100°C are 0.82 and 0.28 respectively, and the emissivity change before and after the phase change is 0.54; in the microwave band of 8.2GHz~18GHz, the average shielding performance at 25°C and 100°C are 4dB and 29dB respectively.

Claims

1. A device structure for intelligent control of thermal radiation and microwaves, characterized in that It consists of a top VO2 layer, a SiO2 layer, and a bottom VO2 layer from top to bottom; When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for infrared-dominated decoupling control, the thickness of the top VO2 layer is 250nm~400nm, the thickness of the SiO2 layer is greater than 100μm, and the thickness of the bottom VO2 layer is less than 300nm; When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for microwave-dominated decoupling control, the thickness of the top VO2 layer is 30nm~70nm, the thickness of the SiO2 layer is 1mm~6mm, and the thickness of the bottom VO2 layer is 1100nm~1500nm; When the device structure with coordinated intelligent control of thermal radiation and microwaves is used for infrared and microwave coupling control, the thickness of the top VO2 layer is 250nm~400nm, the thickness of the SiO2 layer is 2mm~4mm, and the thickness of the bottom VO2 layer is 1100nm~1500nm.

2. The device structure for intelligent control of thermal radiation and microwaves according to claim 1 is characterized in that The infrared-dominated decoupling control is specifically that in the infrared band of 8μm~14μm, the emissivity changes before and after the phase change is 0.4~0.6, in the microwave band of 8.2GHz~18GHz, the average shielding performance before the phase change is 1dB~5dB, and the average shielding performance after the phase change is 8dB~15dB.

3. The device structure for intelligent control of thermal radiation and microwave synergy according to claim 1 is characterized in that The microwave-dominated decoupling control is specifically that in the infrared band of 8μm~14μm, the emissivity changes before and after the phase change is 0.01~0.1; in the microwave band of 8.2GHz~18GHz, the average shielding performance before the phase change is 1dB~5dB, and the average shielding performance after the phase change is 20dB~25dB.

4. The device structure for intelligently controlling thermal radiation and microwaves according to claim 1 is characterized in that The infrared and microwave coupling control is specifically that in the infrared band of 8μm~14μm, the emissivity changes before and after the phase change is 0.4~0.6; in the microwave band of 8.2GHz~18GHz, the average shielding performance before the phase change is 1dB~5dB, and the average shielding performance after the phase change is 21dB~35dB.

5. The device structure for intelligent control of thermal radiation and microwaves according to claim 1 is characterized in that The top VO2 layer and the bottom VO2 layer are VO2 or element-doped VO2.

6. The method for preparing a device structure for intelligent control of thermal radiation and microwaves according to claim 1, characterized in that It is carried out in the following steps:

1. Preprocessing: Ultrasonic cleaning and drying of the quartz substrate to obtain a pretreated quartz substrate; 2. VO2 layer preparation: Using high-energy pulsed magnetron sputtering technology, VO2 films of different thicknesses are deposited on both sides of the pre-treated quartz substrate, and finally annealed to obtain a device structure with coordinated intelligent control of thermal radiation and microwaves.

7. The method for preparing a device structure for intelligent control of thermal radiation and microwaves according to claim 6, characterized in that The ultrasonic cleaning and drying described in step 1 are specifically carried out according to the following steps: under the condition of power of 50W~300W, the quartz substrate is placed in deionized water, ethanol and acetone for ultrasonic cleaning for 10min~20min respectively, and then dried with nitrogen to obtain a pretreated quartz substrate.

8. The method for preparing a device structure for intelligent control of thermal radiation and microwaves according to claim 6, characterized in that In step 2, high energy pulse magnetron sputtering technology is used with a frequency of 400 Hz to 450 Hz, a pulse width of 50 μs to 100 μs, a power of 180 W to 200 W, and a background vacuum of 5 × 10 -4 Pa~1×10 -5 Under the conditions of 0.4 Pa ~ 0.9 Pa, argon flow rate of 80 sccm ~ 100 sccm, oxygen flow rate of 0.4 sccm ~ 2.0 sccm and substrate temperature of 200 ℃ ~ 400 ℃, VO2 films of different thicknesses are deposited on both sides of the pretreated quartz substrate.

9. The method for preparing a device structure for intelligent control of thermal radiation and microwaves according to claim 6, characterized in that The annealing in step 2 is specifically carried out in an argon atmosphere at a temperature of 200° C. to 600° C. for 2 h to 6 h.

10. The method for preparing a device structure for intelligent control of thermal radiation and microwaves according to claim 9, characterized in that In step 2, under an argon atmosphere, the temperature is increased to 200° C.~600° C. at a heating rate of 3° C. / min~5° C. / min.

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