Chip irradiation damage identification system and method based on pulse laser cooperative scanning

Abstract

The invention provides a chip irradiation damage identification system and method based on pulse laser cooperative scanning. The system comprises a pulse laser output module and a cooperative control module. The pulse laser output module is used for coupling laser light paths output by the multiple paths of pulse laser light sources into a single laser light path; the system comprises a pulse laser irradiation state and a damage identification state, the cooperative control module is used for switching the working state of the system, when the working state is switched to the pulse laser irradiation state, the pulse laser output module is started, and the displacement table is controlled to drive the sample table for placing the chip to move, so that the chip moves within a set scanning range at set scanning precision; and when the damage identification state is switched to, the electromagnetic shielding cover and the high-sensitivity CCD camera are started, bias voltage is applied to the chip, the light emitting condition of the chip is identified, and the irradiation sensitive points of the chip are recorded. According to the invention, the damage distribution condition of the chip before and after pulse laser irradiation can be efficiently obtained.

Description

Technical Field

[0001] The present invention belongs to the technical field of chip radiation effect analysis, and in particular relates to a chip radiation damage identification system and method based on pulse laser collaborative scanning. Background Art

[0002] Space-use electronic devices, especially chips, must possess sufficient radiation resistance to ensure long-term stable operation in the complex space environment. Therefore, reliability analysis and testing must fully consider the performance changes of chips under space radiation conditions. Space radiation effects primarily include single-event effects (SEEs) and total dose effects. SEEs are particularly critical: when a single high-energy space particle strikes a chip, the ionization-generated excess carriers can cause device performance degradation or even complete failure. SEEs can be further categorized into SEE upsets, SEE transients, SEE burnouts, and SEE latch-up. However, due to the inability to directly place chips in a real space environment for long-term testing, current SEE resistance assessments rely solely on simulations using heavy ion beams generated by ground-based accelerators. This approach faces multiple limitations, including scarce equipment resources, high costs, complex operations, and poor operability, making it difficult to meet the needs of large-scale, sophisticated research.

[0003] To address the above challenges, researchers have developed an experimental method that uses pulsed lasers to simulate heavy ion irradiation to study single-particle effects. This method uses a high-energy laser beam to produce a local ionization effect on the chip surface, thereby simulating the occurrence of a single-particle event. However, due to the fixed irradiation area of ​​heavy ion irradiation, it can usually only cover the entire chip, making it difficult to achieve precise irradiation of specific sensitive areas. Therefore, in actual research, researchers not only need to locate the irradiation-sensitive areas of the chip in order to carry out targeted reinforcement design, but also must clarify whether new defects or damage are generated inside the chip after irradiation, and further locate the location of these damages, so as to deeply understand the damage and degradation mechanism under single-particle irradiation, and ultimately guide the irradiation reinforcement design of the chip.

[0004] Although pulsed laser simulation technology offers a viable alternative to heavy ion irradiation, current pulsed laser testing equipment still has significant drawbacks. First, it is difficult to automatically scan and irradiate chips globally, over a large area, and with high precision, resulting in low testing efficiency. Second, there is a lack of effective means to accurately assess the damage and defects generated within the chip after laser irradiation, let alone precisely locate these defects. These technical bottlenecks severely restrict the potential application of pulsed laser simulation methods in aerospace chip reliability research. Therefore, there is an urgent need to develop an advanced pulsed laser irradiation technology with full-chip scanning capabilities and damage identification capabilities. Summary of the Invention

[0005] The present invention proposes a chip irradiation damage identification system and method based on pulse laser collaborative scanning, which solves the problems of low testing efficiency and precision of existing pulse laser test devices.

[0006] To solve the above technical problems, the present invention provides a chip irradiation damage identification system based on pulsed laser collaborative scanning, comprising: Pulse laser output module and coordinated control module; The pulse laser output module couples the laser light paths output by multiple pulse laser light sources into a single laser light path; The system includes a pulsed laser irradiation mode and a damage identification mode, and the collaborative control module is used to switch the operating mode of the system: When switching to the pulse laser irradiation mode, the collaborative control module turns on the pulse laser output module, controls the translation stage to drive the sample stage on which the chip is placed to move, so that the chip moves within the set scanning range with the set scanning accuracy; When switched to the damage identification mode, the collaborative control module turns on the electromagnetic shielding cover and the high-sensitivity charge-coupled device (CCD) camera, applies a bias voltage to the chip, identifies the luminescence of the chip, and records the irradiation-sensitive points of the chip.

[0007] Preferably, the pulse laser output module includes a multi-path pulse laser light source, a multi-path coupling module, a laser energy attenuation module and a light focusing output module. The multi-path coupling module couples the laser light paths output by the multi-path pulse laser light source into a single incident light path. The laser energy attenuation module performs attenuation adjustment on the single incident light path. The light focusing output module focuses the attenuated single incident light path into a pulse laser beam.

[0008] Preferably, the displacement stage includes a nano-piezoelectric displacement stage and a stepper motor displacement stage, the nano-piezoelectric displacement stage is arranged above the stepper motor displacement stage, and the sample stage is arranged above the nano-piezoelectric displacement stage; when the displacement stage is used to drive the sample stage on which the chip is placed to move, the sample stage is first driven to move to the target area by the stepper motor displacement stage, and then the target area is scanned by the nano-piezoelectric displacement stage.

[0009] Preferably, the translation stage further comprises a horizontal plane calibration module, and the horizontal plane calibration module is used to adjust the plane of the sample stage to be horizontal.

[0010] Preferably, the collaborative control module switches the working mode of the system through a movable beam splitter.

[0011] The present invention also provides a chip radiation damage identification method based on pulse laser collaborative scanning, which is implemented based on the above-mentioned chip radiation damage identification system based on pulse laser collaborative scanning, and includes the following steps: Step S1: Fix the chip to be tested on the sample stage, use the level calibration module to adjust the plane of the sample stage to a horizontal level, and adjust the height of the light source focusing output module until the light of the visible light source is focused on the sample surface; Step S2: Using the collaborative control module, the system is switched to a damage identification mode, a bias voltage is applied to the chip, the photosensitive luminescence of the chip is identified, and the initial sensitive position of the chip is recorded; Step S3: Switch the system to the pulsed laser irradiation mode, select the wavelength of the pulsed laser light source output by the pulsed laser output module, adjust the laser energy attenuation unit to the maximum attenuation position, adjust the bias voltage applied to the chip, start the translation stage, and use the translation stage to move the sample stage on which the chip is placed within the set scanning range with the set scanning accuracy; Step S4: During the scanning process, if the photocurrent value at a certain position of the chip changes suddenly, the scanning is stopped and the coordinates of the current position, laser energy, wavelength and current abnormality data are recorded; the energy and wavelength of the laser output by the pulse laser output module are changed, and steps S1 to S3 are repeated. Otherwise, the process proceeds to step S5; Step S5: Turn off the pulse laser output module and switch the system to the damage identification mode again to identify the photosensitive luminescence of the chip, record the sensitive and damaged positions of the chip after irradiation scanning, and compare them with the initial sensitive positions obtained in step S2.

[0012] Preferably, the step S3 of using the translation stage to drive the sample stage on which the chip is placed to move within a set scanning range with a set scanning accuracy includes the following steps: Step S31: Divide the set scanning range into several scanning areas of equal size and mark the scanning areas as ; Step S32: Use the stepper motor to move the sample stage to , control the nano-piezoelectric displacement stage in Move inside, so that the pulse laser Perform irradiation scanning and record the end position of the nanopiezoelectric displacement stage ; Step S33: Use the stepper motor to move the sample stage to , control the nano-piezoelectric displacement stage from Middle distance Starting from the nearest position, Perform irradiation scans; Step S34: Repeat the above steps until the irradiation scanning is completed for all scanning areas.

[0013] Preferably, in step S3, before the sample stage on which the chip is placed is moved within the set scanning range with the set scanning accuracy using the translation stage, the chip surface is partitioned, and the initial scanning resolution is set for each area. During the scanning process, the scanning resolution is dynamically adjusted according to the distance between the current scanning position and the initial sensitive position.

[0014] Preferably, the passive area or metal area on the chip surface is divided into a non-sensitive area, the active device area on the chip surface is divided into a sensitive area, and the non-sensitive area or the electric field concentration area at the edge of the sensitive area is divided into a particularly sensitive area.

[0015] Preferably, the expression for dynamically adjusting the scanning resolution according to the distance between the current scanning position and the initial sensitive position is: ; ; In the above formula, For the j Step scan resolution; is the coefficient; is the sum of the distances between the current scanning position and all initial sensitive positions; For the i Initial sensitive position; For the j Step scan position; is the total number of initial sensitive positions.

[0016] The beneficial effects of the present invention include at least: 1. Through the stacked design of a stepper motor stage and a nano-piezoelectric stage, the system can not only cover the entire chip at once, but also automatically cut into sensitive areas for nanoscale scanning, solving the problem of traditional heavy ion beam spot being fixed and only able to cover the entire chip but not localized precision scanning; 2. After pulsed laser irradiation, the system immediately switches to high-sensitivity low-light imaging mode through the same optical path, using defect luminescence to directly mark and locate new damage introduced by irradiation, without moving the chip to an offline device, thus avoiding position mismatch and time delay; 3. All optical path switching, stage movement, bias mode, and imaging mode are automatically completed by the software. The resolution can be dynamically adjusted according to the pre-identified defect coordinates during the scanning process, significantly saving testing time. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 Schematic diagram of the system structure of an embodiment of the present invention; Figure 2 Schematic diagram of the optical path structure of the pulsed laser coupling output module in an embodiment of the present invention; Figure 3Schematic diagram of the working principle of the plane displacement scanning system according to an embodiment of the present invention; Figure 4 Schematic diagram of the switching principle of the high-definition display imaging module according to an embodiment of the present invention; Figure 5 Flowchart of a method according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] The following is a clear and complete description of the technical solutions in the embodiments of the present invention, in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts are within the scope of protection of the present invention.

[0019] like Figure 1 As shown, an embodiment of the present invention provides a chip radiation damage identification system based on pulse laser collaborative scanning, including: a pulse laser output module, a high-definition display imaging module and a collaborative control module.

[0020] The pulse laser output module is used to couple the laser light paths output by multiple pulse laser light sources into a single laser light path.

[0021] The operating modes of the system in the embodiment of the present invention include: visible light mode, pulsed laser irradiation mode and damage identification mode. The collaborative control module switches the operating mode of the system through a movable beam splitter.

[0022] When switching to the pulsed laser irradiation mode, the pulsed laser output module is turned on through the collaborative control module, and other light sources are turned off; the electrical bias module is switched to the pulsed laser irradiation mode, and the plane displacement scanning module is controlled to drive the sample stage where the chip is placed to move, so that the chip moves within the set scanning range with the set scanning accuracy; the photocurrent signal collected by the electrical bias module is read in real time, and a photocurrent distribution heat map is generated to intuitively display the laser response intensity at each position of the chip.

[0023] like Figure 2 As shown, the pulse laser coupling output module can couple pulse lasers of multiple wavelengths. The pulse laser can output the laser to the optical path bracket through optical fiber coupling. The output laser is reflected by the reflector to the laser energy attenuation module. The laser energy attenuation module attenuates several incident light paths. The light focusing output module focuses the attenuated incident light paths into pulse laser beams.

[0024] Each laser light source in the embodiment of the present invention is equipped with an optical path bracket, and the pulse laser coupling output module can couple 4 pulse lasers of different wavelengths through the optical path bracket. The wavelengths of the 4 pulse lasers are 266nm, 355nm, 532nm, and 1064nm respectively. For different chip types, the corresponding laser light source needs to be turned on when in use, and the shading plate of the corresponding light source coupling optical path needs to be opened, while other light sources need to be turned off to output the corresponding laser light. The laser energy attenuation module includes a rotary multi-speed attenuation plate and a continuous linear attenuation plate. The adjustable gear of the rotary multi-speed attenuation plate is n gears. In the embodiment of the present invention, n=4, which are the maximum energy gear, 1 / 2 of the maximum energy, 1 / 4 of the maximum energy and 1 / 10 of the maximum energy respectively. The continuous linear attenuation plate can provide 0-10 -4 The attenuated laser is incident on the light focusing output module, thereby outputting a high-quality, uniform pulsed laser beam. The light focusing output module in the embodiment of the present invention includes a laser beam expansion optical path, a reflective objective lens, and a height adjustment module. The laser beam output from the optical fiber coupling undergoes energy attenuation and the laser beam expansion optical path, and its cross-section is expanded, so that it is incident on the reflective objective lens and focused to output a pulsed laser beam with a small spot diameter, good uniformity, and high beam quality. After focusing, the beam can meet the requirements of high-precision scanning irradiation for beam positioning capability.

[0025] When the system switches to the pulsed laser irradiation mode, adjust the laser energy attenuation module to the initial test position, that is, the maximum attenuation position, to ensure that the laser energy is safe and controllable; adjust the height of the reflective objective lens and the incident angle of the laser so that the laser forms a pulsed laser beam with small diameter, good uniformity and high beam quality after passing through the beam expansion optical path, and focuses on the chip surface.

[0026] The electrical bias module can apply a variety of electrical biases to the test chip sample. The module includes a series of electrical source meters, an oscilloscope and several probes, a BNC / SMA interface and a BNC / SMA lead. It can set two bias modes at the same time, including a pulsed laser irradiation mode and a damage identification mode, and control the source meter to output the corresponding bias through the collaborative control module. The test chip sample in the embodiment of the present invention is a 650V gallium nitride transistor device. The three-terminal electrodes of the test transistor device are packaged by wire bonding and then connected to the interface. The bias mode is controlled by the collaborative control module. The bias mode of the pulsed laser irradiation mode is set to short-circuit the gate and the source, and apply 100V to the drain, while the bias mode of the damage identification mode is set to short-circuit the gate and the source, and apply 300V to the drain. At the same time, the electrical bias module can collect the response data of the test device under bias through the source meter. Specifically, it collects the dynamic waveform data of the chip through a high-performance oscilloscope, monitors its current while outputting the bias voltage through the high-performance source meter, and automatically calculates the monitored current data, draws a photocurrent heat map or outputs a static response image.

[0027] like Figure 3 As shown, the plane displacement scanning module includes a sample stage, a stepper motor displacement stage, a nano-piezoelectric displacement stage and a horizontal plane calibration module. These platforms are fixed together by stacking. The entire system is composed of a sample stage, a horizontal plane calibration module, a nano-piezoelectric displacement stage and a stepper motor displacement stage from top to bottom.

[0028] The stepper motor displacement stage and the nano-piezoelectric displacement stage are switched by the collaborative control module. The displacement accuracy of the nano-piezoelectric displacement stage is about a few nanometers, and the displacement range is The displacement accuracy of the stepper motor stage is approximately , the displacement range is The nanopiezoelectric stage has high displacement accuracy and a small displacement range, while the stepper motor stage has low displacement accuracy and a large displacement range. Therefore, when large-scale movement is required, the system automatically switches to the stepper motor stage, and when high-precision scanning is required, the system automatically switches to the nanopiezoelectric stage. When both range and accuracy are required, the system can automatically control the two stages to work together.

[0029] Assume that the displacement accuracy of the nano-piezoelectric displacement stage is a and the displacement range is The displacement accuracy of the stepper motor stage is b, and the displacement range is The displacement accuracy of the entire plane displacement scanning module is , the displacement range is For example, if you need to The range of accuracy is When scanning, the system can divide the scanning range into 100 Scan areas of When scanning starts, first move the stepper motor stage to , and control the nano-piezoelectric displacement stage from the initial position Start in Move the laser to Perform irradiation scan and record its end position When completed After the irradiation scan, move the stepper motor stage to the next area , and control the nano-piezoelectric displacement stage from Middle distance Recent Location Start to Perform irradiation scanning, and so on until all areas are scanned. Through this method, the displacement accuracy of the entire plane displacement scanning module is several nanometers, and the displacement range is about In addition, before scanning a large area, the horizontal plane height difference of the translation stage can be calibrated by manually adjusting the calibration knob or operating the horizontal plane calibration module through automatic software control to avoid laser defocus caused by height changes during large-scale automatic scanning.

[0030] like Figure 4 As shown in the figure, when switching to damage identification mode, the collaborative control module turns off the pulse laser output module, the visible light illumination display unit and its corresponding visible light CCD camera and light shield. The high-definition display imaging module is switched to low-light display mode, the high-sensitivity charge-coupled device (CCD) camera is turned on, the movable beam splitter is adjusted to the defect identification mode position, and the light shield set in front of the high-sensitivity CCD camera lens is opened. The electromagnetic shielding cover is opened to completely darken the test environment to avoid ambient light interference. The electrical bias module is switched to damage identification mode, and a preset bias voltage is applied to the test device, causing the chip's defects to produce weak luminescence under the action of the electric field. The collaborative control module will automatically adjust the exposure factor of the high-sensitivity CCD camera according to the ambient light level and the chip's defect luminescence intensity until the chip's photoinduced defect luminescence under the electrical bias voltage can be clearly observed. The precise position coordinates of the defect and damage are recorded to complete the chip defect location.

[0031] High-sensitivity CCD cameras are extremely sensitive and have low-light imaging capabilities in the near-infrared and near-ultraviolet ranges, so they can identify the sensitive luminescence of the chip under electrical bias.

[0032] like Figure 4As shown, when switched to the visible light mode, the high-definition display imaging module is switched to the visible light illumination display mode through the collaborative control module: all laser light sources of the pulse laser output module are turned off to ensure no laser output, and the movable beam splitter is turned to the visible light mode gear; the visible light LED is turned on, and the height of the light focusing output module is adjusted to focus the visible light LED on the surface of the chip to be tested until the chip image is clear; the visible light CCD camera is turned on, and the light shielding sheet set in front of the camera lens is opened. At this time, the chip surface is displayed on the screen in real time; the height adjustment module is adjusted manually or automatically through the software to achieve fine focus and observation of the chip surface.

[0033] like Figure 5 As shown, an embodiment of the present invention further provides a chip radiation damage identification method based on pulse laser collaborative scanning, which is implemented based on the above-mentioned chip radiation damage identification system based on pulse laser collaborative scanning, and includes the following steps: Step S1: Switch the system to visible light mode, fix the chip to be tested on the sample stage, use the horizontal plane calibration module to adjust the plane of the sample stage to a horizontal level, and adjust the height of the light source focusing output module until the light of the visible light LED is focused on the sample surface.

[0034] Step S2: Use the collaborative control module to switch the system to the damage identification mode, apply the bias voltage of the damage identification mode to the chip, identify the photosensitive luminescence of the chip, and record the initial sensitive position of the chip.

[0035] Step S3: Switch the system to the pulse laser irradiation mode, select the wavelength of the pulse laser light source output by the pulse laser output module, adjust the laser energy attenuation unit to the maximum attenuation position, adjust the bias voltage applied to the chip, start the translation stage, and use the translation stage to move the sample stage where the chip is placed within the set scanning range with the set scanning accuracy.

[0036] Step S4: During the scanning process, if the photocurrent value at a certain position of the chip changes suddenly, stop scanning and record the coordinates of the current position, laser energy, wavelength and current abnormality data; change the energy and wavelength of the laser output by the pulse laser output module, repeat steps S1 to S3, otherwise go to step S5.

[0037] Step S5: Turn off the pulse laser output module and switch the system to the damage identification mode again to identify the photosensitive luminescence of the chip, record the sensitive and damaged positions of the chip after irradiation scanning, and compare them with the initial sensitive positions obtained in step S2.

[0038] Step S6: Replace the chip, change the wavelength and energy of the pulsed laser and repeat the test to obtain the irradiation-sensitive area of ​​the chip under pulsed laser irradiation of different wavelengths and energies, as well as the distribution of laser-induced damage and sensitive areas.

[0039] In addition to enabling switching between different operating modes, the collaborative control module also features automatic optimization scanning. In pulsed laser irradiation mode, automatic optimization mode can be selected based on test needs. In automatic optimization mode, the system first switches to visible light mode, records an image of the chip surface observed by a CCD camera, and imports the RGB data of the image into the system's built-in chip region recognition dataset. This dataset covers a wide range of chip surface topography. A neural network is trained using this dataset, enabling it to automatically identify various regions on the chip surface, including the passive region, metal electrode region, and device structure region. Each region is divided into P1, P2, and P3 based on its response to pulsed laser. Regions such as the passive region and metal region are labeled as non-sensitive regions P1, as they have not been sensitive to pulsed laser irradiation in previous irradiation testing practices. Active device structure regions, such as the interdigitated region where the main device structures reside, are labeled as irradiation-sensitive regions P2. The edges of P1 or P2 regions, which often have stronger electric field distributions and are particularly sensitive to laser pulse irradiation, are labeled as particularly sensitive regions P3.

[0040] Furthermore, the scanning resolution is dynamically adjusted according to the original sensitivity distribution of the chip before irradiation scanning. The position of each luminous point of the chip before irradiation scanning is marked as , n is the total number of initial sensitive luminous points. The maximum scanning resolution allowed by the plane displacement scanning module is In the embodiment of the present invention, Before scanning begins, you need to set the initial scanning resolution for each area. , for P1, P2, and P3, the initial resolutions are set to , After the scan starts, the plane displacement scanning module records the current scan position each time it moves. , j Indicates the number of steps in the current scan and calculates the sum of the distances between the current scan position and all initial sensitive luminous points : ; Where, For the i An initial sensitive position.

[0041] according to Dynamically adjust scanning resolution, j Step scan resolution Should meet the following requirements: ; Where, A A negative coefficient.

[0042] Through the above process, the resolution during the scanning process can be dynamically adjusted according to the distribution of the radiation sensitive area and the sensitivity distribution on the chip surface.

[0043] The core of the pulsed laser irradiation full-chip scanning and damage identification system proposed in the present invention is to combine multi-wavelength, energy-adjustable pulsed laser simulation of heavy ion irradiation with chip damage-sensitivity identification into one. First, the laser is used to automatically perform large-scale, high-precision scanning irradiation on the entire chip, and photocurrent data is collected in real time to monitor changes in device performance; then, one-click switching to sensitive identification mode is performed to quickly compare the damage and sensitivity distribution of the chip before and after irradiation in situ. This solves the two major pain points of existing pulsed laser simulation devices, which are that it is difficult to perform large-scale automatic scanning irradiation and that it is impossible to accurately locate and quantify irradiation damage / sensitivity. The entire process is uniformly scheduled by an integrated collaborative control module, and each functional module can be switched automatically and steplessly. The test results are high-definition and visible, and the system stability, operability and degree of automation are significantly improved, and the test efficiency is greatly improved.

[0044] The technical features of the above embodiments may be combined in any manner. To simplify the description, not all possible combinations of the technical features in the above embodiments are described. Only preferred embodiments of the present invention are presented. While the description is relatively specific and detailed, it should not be construed as limiting the scope of the present invention. As long as there are no conflicts in the combination of these technical features, they should be considered to be within the scope of this specification.

[0045] It should be noted that, for those skilled in the art, various modifications and improvements can be made without departing from the scope of the present invention, and these modifications and improvements fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A chip irradiation damage identification system based on pulse laser collaborative scanning, characterized in that: include: Pulse laser output module and coordinated control module; The pulse laser output module couples the laser light paths output by multiple pulse laser light sources into a single laser light path; The system includes a pulsed laser irradiation mode and a damage identification mode, and the collaborative control module is used to switch the operating mode of the system: When switching to the pulse laser irradiation mode, the collaborative control module turns on the pulse laser output module, controls the translation stage to drive the sample stage on which the chip is placed to move, so that the chip moves within the set scanning range with the set scanning accuracy; When switched to the damage identification mode, the collaborative control module turns on the electromagnetic shielding cover and the high-sensitivity charge-coupled device (CCD) camera, applies a bias voltage to the chip, identifies the luminescence of the chip, and records the irradiation-sensitive points of the chip.

2. The chip irradiation damage identification system based on pulsed laser collaborative scanning according to claim 1 is characterized in that: The pulse laser output module includes a multi-path pulse laser light source, a multi-path coupling module, a laser energy attenuation module and a light focusing output module. The multi-path coupling module couples the laser light paths output by the multi-path pulse laser light source into a single incident light path. The laser energy attenuation module performs attenuation adjustment on the single incident light path. The light focusing output module focuses the attenuated single incident light path into a pulse laser beam.

3. The chip irradiation damage identification system based on pulse laser collaborative scanning according to claim 1 is characterized in that: The displacement stage includes a nano-piezoelectric displacement stage and a stepper motor displacement stage. The nano-piezoelectric displacement stage is arranged above the stepper motor displacement stage, and the sample stage is arranged above the nano-piezoelectric displacement stage. When the displacement stage is used to move the sample stage on which the chip is placed, the sample stage is first moved to the target area by the stepper motor displacement stage, and then the target area is scanned by the nano-piezoelectric displacement stage.

4. The chip irradiation damage identification system based on pulsed laser collaborative scanning according to claim 3 is characterized by: The translation stage further includes a horizontal plane calibration module, which is used to adjust the plane of the sample stage to be horizontal.

5. The chip irradiation damage identification system based on pulse laser collaborative scanning according to claim 1 is characterized in that: The collaborative control module switches the working mode of the system through a movable beam splitter.

6. A chip radiation damage identification method based on pulse laser collaborative scanning, implemented based on a chip radiation damage identification system based on pulse laser collaborative scanning according to any one of claims 1 to 5, characterized in that: The following steps are involved: Step S1: Fix the chip to be tested on the sample stage, use the level calibration module to adjust the plane of the sample stage to a horizontal level, and adjust the height of the light source focusing output module until the light of the visible light source is focused on the sample surface; Step S2: Using the collaborative control module, the system is switched to a damage identification mode, a bias voltage is applied to the chip, the photosensitive luminescence of the chip is identified, and the initial sensitive position of the chip is recorded; Step S3: Switch the system to the pulsed laser irradiation mode, select the wavelength of the pulsed laser light source output by the pulsed laser output module, adjust the laser energy attenuation unit to the maximum attenuation position, adjust the bias voltage applied to the chip, start the translation stage, and use the translation stage to move the sample stage on which the chip is placed within the set scanning range with the set scanning accuracy; Step S4: During the scanning process, if the photocurrent value at a certain position of the chip changes suddenly, the scanning is stopped and the coordinates of the current position, laser energy, wavelength and current abnormality data are recorded; the energy and wavelength of the laser output by the pulse laser output module are changed, and steps S1 to S3 are repeated. Otherwise, the process proceeds to step S5; Step S5: Turn off the pulse laser output module and switch the system to the damage identification mode again to identify the photosensitive luminescence of the chip, record the sensitive and damaged positions of the chip after irradiation scanning, and compare them with the initial sensitive positions obtained in step S2.

7. The chip irradiation damage identification method based on pulse laser collaborative scanning according to claim 6, characterized in that: The step S3 of using the translation stage to move the sample stage on which the chip is placed within a set scanning range with a set scanning accuracy includes the following steps: Step S31: Divide the set scanning range into several scanning areas of equal size and mark the scanning areas as ; Step S32: Use the stepper motor to move the sample stage to , control the nano-piezoelectric displacement stage in Move inside, so that the pulse laser Perform irradiation scanning and record the end position of the nanopiezoelectric displacement stage ; Step S33: Use the stepper motor to move the sample stage to , control the nano-piezoelectric displacement stage from Middle distance Starting from the nearest position, Perform irradiation scans; Step S34: Repeat the above steps until the irradiation scanning is completed for all scanning areas.

8. The chip irradiation damage identification method based on pulse laser collaborative scanning according to claim 6 is characterized in that: In step S3, before the sample stage on which the chip is placed is moved within the set scanning range with the set scanning accuracy using the translation stage, the chip surface is partitioned and the initial scanning resolution is set for each area. During the scanning process, the scanning resolution is dynamically adjusted according to the distance between the current scanning position and the initial sensitive position.

9. The chip irradiation damage identification method based on pulse laser collaborative scanning according to claim 8, characterized in that: The passive area or metal area on the chip surface is divided into a non-sensitive area, the active device area on the chip surface is divided into a sensitive area, and the non-sensitive area or the edge electric field concentration area of ​​the sensitive area is divided into a particularly sensitive area.

10. The chip irradiation damage identification method based on pulse laser collaborative scanning according to claim 8, characterized in that: The expression for dynamically adjusting the scanning resolution according to the distance between the current scanning position and the initial sensitive position is: ； ； In the above formula, For the j Step scan resolution; is the coefficient; is the sum of the distances between the current scanning position and all initial sensitive positions; For the i Initial sensitive positions; For the j Step scan position; is the total number of initial sensitive positions.

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