High-power light source COC and CPO silicon light engine and coupling method

Abstract

A first electrode bonding pad is arranged on the upper surface of a heat sink, an N electrode of a DFB chip is attached to the first electrode bonding pad, a second electrode bonding pad is arranged at the position, behind the DFB chip, of the heat sink, a P electrode of an MPD chip is attached to the second electrode bonding pad, a photosensitive surface and a first N electrode are sequentially arranged on the MPD chip in the direction away from the DFB chip, and a second electrode bonding pad is arranged at the position, behind the second electrode bonding pad, of the MPD chip. The P electrode of the DFB chip is provided with a plurality of first gold threads which are distributed side by side, the first gold threads stride across the photosensitive surface and then are routed on the first N electrode of the MPD chip, and backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip through the arc-shaped first gold threads. A CPO silicon light engine comprises a high-power light source COC. The MPD chip has the beneficial effects that the backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip by adopting the first gold wire for supplying power to the DFB chip, so that the MPD chip finishes monitoring the optical power of the DFB chip, and the cost is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of light engines, and in particular to a high-power light source COC, CPO silicon photonic light engine and a coupling method. Background Art

[0002] Traditional CPO silicon photonic engines use external high-power light sources COC, especially for the field of AI computing power, which requires more than 200mW / single channel. The optical power of the DFB chip in this type of high-power light source COC is greater than 300mW, and an MPD chip is configured to monitor the optical power of the DFB chip. Its specific structure includes: a first ceramic heat sink, a DFB chip is mounted on the upper surface of the first ceramic heat sink, and a special second ceramic heat sink is provided on the upper surface of the first ceramic heat sink behind the DFB chip. The second ceramic heat sink is vertically mounted on the side adjacent to the DFB chip (recorded as the front) to receive the MPD chip backlight of the DFB chip, and there is a corner pad between the upper surface and the front of the second ceramic heat sink. The corner pad rotates the electrode of the MPD chip 90°, that is, transfers it from the upper surface to the front, thereby facilitating gold wire bonding between the MPD chip and the area on the front where the corner pad is located. The specific structure is as follows: Figure 1 As shown, the disadvantages of this solution are: the second ceramic heat sink is a special ceramic heat sink with high price, and since the DFB chip has ultra-high optical power, it is required to coat the photosensitive surface of the MPD chip with an attenuation film to prevent the MPD chip from photocurrent saturation. Summary of the Invention

[0003] The technical problem to be solved by the present invention is to provide a high-power light source COC, CPO silicon photonic engine and coupling method to overcome the deficiencies in the above-mentioned prior art.

[0004] The technical solution of the present invention to solve the above technical problems is as follows: A high-power light source COC includes: a heat sink, a DFB chip, and an MPD chip. A first electrode pad is provided on the upper surface of the heat sink. The DFB chip is attached to the first electrode pad with its N electrode facing downward. A second electrode pad is provided on the upper surface of the heat sink behind the DFB chip. The MPD chip is attached to the second electrode pad with its P electrode facing downward. The upper surface of the MPD chip has a photosensitive surface and a first N electrode in sequence in a direction away from the DFB chip. The P electrode on the upper surface of the DFB chip has multiple first gold wires distributed side by side, which are bonded to the first N electrode of the MPD chip after crossing the photosensitive surface. The backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip via the arc-shaped first gold wires.

[0005] The beneficial effects of the present invention are as follows: a special heat sink is eliminated, and instead the MPD chip is attached to the second electrode pad on the heat sink. Then, a first gold wire used to supply power to the DFB chip is used to reflect the backlight of the DFB chip onto the photosensitive surface of the MPD chip, thereby allowing the MPD chip to monitor the optical power of the DFB chip, effectively reducing costs. The photocurrent of the MPD chip can be flexibly changed by reducing the number of first gold wires and adjusting the arc shape of the first gold wires, thereby eliminating the need for an attenuation film on the photosensitive surface of the MPD chip, further reducing costs.

[0006] On the basis of the above technical solution, the present invention can also be improved as follows.

[0007] Furthermore, the diameter of the first gold wire is 20 μm to 30 μm.

[0008] Furthermore, the diameter of the first gold wire is 25 μm.

[0009] Furthermore, the center distance between two adjacent first gold wires is 100 μm to 200 μm.

[0010] Furthermore, the number of the first gold wires is 3 to 10.

[0011] The beneficial effect of adopting the above steps is that it can ensure that the backlight of the DFB chip is reflected on the photosensitive surface of the MPD chip.

[0012] Furthermore, a third electrode pad is provided on the heat sink behind the MPD chip, and a second gold wire is bonded to the third electrode pad on the first N electrode of the MPD chip.

[0013] A further beneficial effect of the above method is that it is convenient to connect the corresponding power supply electrodes on the external PCB board, thereby supplying power to the MPD chip and the DFB chip.

[0014] Furthermore, rear ends of the first electrode pad, the second electrode pad, and the third electrode pad are flush.

[0015] Furthermore, the MPD chips are distributed at an angle of 11° to 13° relative to the DFB chips.

[0016] A further beneficial effect of the above method is that the backlight of the DFB chip does not return to the origin after being reflected from the side of the MPD chip, thereby reducing the influence of the reflected light on the DFB chip.

[0017] Based on the above technical solution, the present invention also provides a CPO silicon photonics engine, including: the above high-power light source COC.

[0018] A further beneficial effect of the above is that the use of low-cost high-power light source COC can effectively reduce the cost of CPO silicon photonic engine.

[0019] Based on the above technical solution, the present invention also provides a high-power light source COC coupling method for coupling the high-power light source COC as described above, comprising the following steps: S10, attaching the DFB chip to the first electrode pad with the N electrode facing downward; S20, attaching the MPD chip to the second electrode pad with the P electrode facing downward; S30, soldering one end of a plurality of first gold wires to the P electrode on the upper surface of the DFB chip, and then allowing the other end to cross the photosensitive surface and then be bonded to the first N electrode of the MPD chip, and adjusting the arc shape of the first gold wires so that the backlight of the DFB chip is reflected by the first gold wires onto the photosensitive surface of the MPD chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a structural diagram of a high-power light source COC in the prior art; Figure 2 A top view of the high-power light source COC in the present invention; Figure 3 This is a front view of the high-power light source COC in the present invention; Figure 4 This is a schematic diagram of a state in which the backlight of the DFB chip does not return to the origin after being reflected from the side of the MPD chip in the present invention.

[0021] In the accompanying drawings, the components represented by the reference numerals are as follows: 1. Heat sink, 2. DFB chip, 3. MPD chip, 310. Photosensitive surface, 320. First N-electrode, 4. First electrode pad, 5. Second electrode pad, 6. First gold wire, 7. Third electrode pad, 8. Second gold wire. DETAILED DESCRIPTION

[0022] The principles and features of the present invention are described below with reference to the accompanying drawings. The examples given are only used to explain the present invention and are not used to limit the scope of the present invention.

[0023] Example 1 like Figure 2 、 Figure 3As shown, a high-power light source COC includes: a heat sink 1, a DFB chip 2 and an MPD chip 3. A first electrode pad 4 is provided on the upper surface of the heat sink 1. The DFB chip 2 is attached to the first electrode pad 4 with the N electrode facing downward. A second electrode pad 5 is provided on the upper surface of the heat sink 1 behind the DFB chip 2, and the P electrode on the lower surface of the MPD chip 3 is attached to the second electrode pad 5. The upper surface of the MPD chip 3 has a photosensitive surface 310 and a first N electrode 320 in sequence along the direction away from the DFB chip 2, that is, the photosensitive surface 310 is between the first N electrode 320 and the P electrode of the DFB chip 2. There are multiple first gold wires 6 distributed side by side on the P electrode on the upper surface of the DFB chip 2. After crossing the photosensitive surface 310, they are bonded to the first N electrode 320 of the MPD chip 3. The backlight of the DFB chip 2 can be reflected on the photosensitive surface 310 of the MPD chip 3 through the arc-shaped first gold wires 6.

[0024] A special heat sink is eliminated, and instead the MPD chip 3 is attached to the second electrode pad 5 on the heat sink 1. Then, a first gold wire 6 for supplying power to the DFB chip 2 is used to reflect the backlight of the DFB chip 2 onto the photosensitive surface 310 of the MPD chip 3, so that the MPD chip 3 can monitor the optical power of the DFB chip 2, effectively reducing costs. In addition, the photocurrent of the MPD chip 3 can be flexibly changed by reducing the number of first gold wires 6 and adjusting the arc shape of the first gold wires 6, thereby eliminating the need for an attenuation film on the photosensitive surface 310 of the MPD chip 3, further reducing costs.

[0025] Example 2 like Figure 2 、 Figure 3 As shown, this embodiment is a further improvement on the basis of embodiment 1, specifically as follows: The diameter of the first gold wire 6 is 20 μm to 30 μm. Furthermore, the diameter of the first gold wire 6 is preferably 25 μm.

[0026] The center distance between two adjacent first gold wires 6 is preferably 100μm to 200μm, and the number of first gold wires 6 is preferably 3 to 10. In actual selection, it can be 3, 4, 5, 6, 7, 8, 9, or 10. The specific data is determined according to the actual coupling situation.

[0027] Example 3 like Figure 2 As shown, this embodiment is a further improvement on the basis of embodiment 1 or 2, specifically as follows: A third electrode pad 7 is provided on the heat sink 1 behind the MPD chip 3. A second gold wire 8 is bonded to the third electrode pad 7 on the first N electrode 320 of the MPD chip 3. The first electrode pad 4, the second electrode pad 5 and the third electrode pad 7 are respectively connected to the corresponding power supply electrodes on the PCB board. The DFB chip 2 can be powered by the first gold wire 6.

[0028] Example 4 like Figure 2 As shown, this embodiment is a further improvement on the basis of embodiment 3, specifically as follows: The rear ends of the first electrode pad 4, the second electrode pad 5 and the third electrode pad 7 are flush, the first electrode pad 4 is L-shaped, the second electrode pad 5 is also L-shaped, and the third electrode pad 7 is rectangular. The second electrode pad 5 is located inside the L end of the first electrode pad 4, and the third electrode pad 7 is located between the L end of the first electrode pad 4 and the L end of the second electrode pad 5. The first electrode pad 4, the second electrode pad 5 and the third electrode pad 7 are preferably gold-plated pads.

[0029] Example 5 like Figure 4 As shown, this embodiment is a further improvement on the basis of any one of the embodiments 1 to 4, specifically as follows: The MPD chip 3 is tilted 11° to 13° relative to the DFB chip 2 , so that the backlight of the DFB chip 2 does not return to the origin after being reflected from the side of the MPD chip 3 , thereby reducing the impact of the reflected light on the DFB chip 2 .

[0030] Example 6 A CPO silicon photonics engine includes: a high-power light source COC as described in any one of embodiments 1 to 5.

[0031] Example 7 A high-power COC light source coupling method is used to couple the high-power COC light source of any one of embodiments 1 to 5, comprising the following steps: S10, attaching the DFB chip 2 to the first electrode pad 4 with the N electrode facing downward; S20, attaching the MPD chip 3 to the second electrode pad 5 with the P electrode facing downward; S30, solder one end of a plurality of first gold wires 6 to the P electrode 210 on the upper surface of the DFB chip 2, and then allow the other end to cross the photosensitive surface 310 and be bonded to the first N electrode 320 of the MPD chip 3. Adjust the arc shape of the first gold wires 6 so that the backlight of the DFB chip 2 is reflected on the photosensitive surface 310 of the MPD chip 3 through the first gold wires 6.

[0032] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A high-power COC light source, characterized in that: include: A heat sink (1), a DFB chip (2) and an MPD chip (3), wherein a first electrode pad (4) is provided on the upper surface of the heat sink (1), the DFB chip (2) is attached to the first electrode pad (4) with the N electrode facing downward, a second electrode pad (5) is provided on the upper surface of the heat sink (1) behind the DFB chip (2), the MPD chip (3) is attached to the second electrode pad (5) with the P electrode facing downward, a photosensitive surface (310) and a first N electrode (320) are sequentially provided on the upper surface of the MPD chip (3) in a direction away from the DFB chip (2), a plurality of first gold wires (6) arranged side by side are provided on the P electrode on the upper surface of the DFB chip (2), and are bonded to the first N electrode (320) of the MPD chip (3) after crossing the photosensitive surface (310), and the backlight of the DFB chip (2) is reflected on the photosensitive surface (310) of the MPD chip (3) through the arc-shaped first gold wires (6).

2. A high-power COC light source according to claim 1, characterized in that: The diameter of the first gold wire (6) is 20 μm to 30 μm.

3. A high-power COC light source according to claim 2, characterized in that: The diameter of the first gold wire (6) is 25 μm.

4. A high-power COC light source according to claim 2 or 3, characterized in that: The center distance between two adjacent first gold wires (6) is 100 μm to 200 μm.

5. The high-power COC light source according to claim 4, characterized in that: The number of the first gold wires (6) is 3 to 10.

6. The high-power COC light source according to claim 1, characterized in that: A third electrode pad (7) is provided on the heat sink (1) behind the MPD chip (3), and a second gold wire (8) is bonded to the third electrode pad (7) on the first N electrode (320) of the MPD chip (3).

7. The high-power COC light source according to claim 6, characterized in that: The rear ends of the first electrode pad (4), the second electrode pad (5) and the third electrode pad (7) are flush.

8. The high-power COC light source according to claim 1, characterized in that: The MPD chip (3) is distributed at an angle of 11° to 13° relative to the DFB chip (2).

9. A CPO silicon photonics engine, characterized in that: include: The high-power COC light source according to any one of claims 1 to 8.

10. A high-power light source COC coupling method, characterized in that: The method for coupling the high-power light source COC according to any one of claims 1 to 8 comprises the following steps: S10, attaching the DFB chip (2) to the first electrode pad (4) with the N electrode facing downward; S20, attaching the MPD chip (3) to the second electrode pad (5) with the P electrode facing downward; S30, welding one end of a plurality of first gold wires (6) to the P electrode on the upper surface of the DFB chip (2), and then allowing the other end to cross the photosensitive surface (310) and then be bonded to the first N electrode (320) of the MPD chip (3), and adjusting the arc shape of the first gold wires (6) so that the backlight of the DFB chip (2) is reflected on the photosensitive surface (310) of the MPD chip (3) through the first gold wires (6).

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