Ion beam sputtering composite film control system and method

Abstract

The invention relates to the technical field of ion beam sputtering, in particular to an ion beam sputtering composite film control system and method. Comprising a parameter reverse solving module, a target material motion control module and an interface pollution inhibition module. The target component composition of the composite film and pre-stored target material physical parameter data are collected through the parameter reverse solving module, a reverse integral equation solving algorithm is utilized, beam spot shape parameters and target material motion track parameters are output, the target material motion control module establishes an elliptical beam spot and combined target dynamic coupling model, and the target material motion control module controls the target material motion. The interface pollution suppression module utilizes a laser emitter to emit high-energy pulse laser, etches a segmentation groove on the surface of a deposited film layer, reduces interface pollution, combines boundary beam attenuation, adjusts the beam intensity of an ion beam, and synergistically suppresses the interface pollution, so as to realize accurate control of the components of the composite film. And the component control precision and efficiency are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of ion beam sputtering, and in particular to an ion beam sputtering composite film control system and method. Background Art

[0002] During ion beam sputtering, the beam spot shape determines its interaction area with the target surface and the energy distribution, while the target's motion affects the duration and frequency of the beam spot's interaction with different locations on the target. These two interrelated parameters jointly determine the number and proportion of atoms or molecules sputtered from the target, thereby affecting the composition of the composite film. Beam spot shape parameters: The semi-major and semi-minor axes of the elliptical beam spot determine the size and shape of the beam spot. The longer the semi-major axis, the larger the target area covered by the beam spot along the major axis, potentially increasing the amount of target sputtering in that area. The semi-minor axis affects the energy concentration of the beam spot. The azimuth angle determines the direction of the elliptical beam spot. Changing the azimuth angle can adjust the degree of interaction between the beam spot and different parts of the target, thereby affecting the sputtering ratio of each target material. Target motion parameters: The target's motion speed affects the relative interaction time of the beam spot with the target surface. Slower speed results in longer interaction time and greater sputtering. The motion trajectory determines the order and frequency of the beam spot's scanning across different locations on the target. A properly designed trajectory ensures that each target material is sputtered in a predetermined ratio.

[0003] Traditional ion beam sputtering composite films rely primarily on a trial-and-error approach to determine ion beam parameters and target motion. Technicians must repeatedly adjust parameters such as the ion beam energy, beam current, and beam spot shape, as well as the target's movement speed and path. They then perform composition testing on each composite film produced, adjusting the parameters based on the test results, and repeating this cycle. This approach is not only time-consuming and labor-intensive, significantly increasing R&D costs and production cycles, but also lacks precise mathematical models and theoretical guidance, making it difficult to achieve high-precision control of the composite film's composition. To achieve this, we establish an inverse integral equation to calculate the corresponding beam spot shape parameters and target motion trajectory parameters based on the target composition of the composite film. The beam spot shape is geometrically correlated with the target motion, allowing for precise control of the composite film's composition and improving both the accuracy and efficiency of composite film composition control. Furthermore, we employ a dual mechanism for suppressing interface contamination to suppress contamination at the composite film interface, thereby improving the quality and performance of the composite film. Therefore, we propose a control system and method for ion beam sputtering composite films. Summary of the Invention

[0004] The purpose of the present application is to solve the problem that the traditional ion beam sputtering composite film method not only consumes time and effort, greatly increases the research and development cost and production cycle, but also is difficult to realize high-precision control of the composition of the composite film due to the lack of precise mathematical models and theoretical guidance, so that the corresponding beam spot shape parameters and target material motion trajectory parameters can be calculated according to the target composition of the composite film by establishing an inverse integral equation, the beam spot shape and the target material motion are geometrically related, the composition of the composite film is accurately controlled, the precision and efficiency of the composition control of the composite film are improved, and the interface pollution is inhibited by adopting a double mechanism, thereby improving the quality and performance of the composite film.

[0005] To achieve the above-mentioned purpose, the present application provides an ion beam sputtering composite film control system, which comprises a parameter inverse solving module, a target material motion control module and an interface pollution inhibition module.

[0006] The parameter inverse solving module collects the target composition of the composite film and the pre-stored target material physical parameter data, takes the target composition of the composite film as input, uses an inverse integral equation solving algorithm, solves a matrix equation, and outputs the beam spot shape parameters and the target material motion trajectory parameters.

[0007] The target material motion control module establishes a Cartesian coordinate system with the target material surface as the x, y plane and the vertical target material surface direction as the z axis, determines the overlapping area of the beam spot and the target material at different times according to the beam spot shape parameters and the target material motion trajectory parameters, calculates the sputtering amount of the target material according to the action time of the overlapping area, establishes an elliptical beam spot and combined target dynamic coupling model, and controls the composition of the composite film through the geometric correlation of the beam spot shape and the target material motion.

[0008] The interface pollution inhibition module uses a laser emitter to emit high-energy pulsed laser to etch a division groove on the surface of the deposited film layer, reduces the interface pollution, adjusts the beam current intensity of the ion beam in combination with the boundary beam current attenuation, and cooperatively inhibits the interface pollution.

[0009] Compared with the prior art, the present application has the following advantages:

[0010] 1. The ion beam sputtering composite film control system and method collect the target composition of the composite film and the pre-stored target material physical parameter data through the parameter inverse solving module, take the target composition of the composite film as input, use an inverse integral equation solving algorithm, solve a matrix equation, output the beam spot shape parameters and the target material motion trajectory parameters, convert the composition control into a matrix equation solving through the establishment of an inverse integral equation, replace the traditional trial-and-error method, save a lot of time, and reduce the research and development cost and production cycle.

[0011] 2. The target material motion control module establishes a Cartesian coordinate system with the target material surface as the x, y plane and the vertical direction of the target material surface as the z axis, determines the overlapping area of the beam spot and the target material at different times according to the beam spot shape parameters and the target material motion trajectory parameters, obtains the sputtering amount of the target material according to the action time of the overlapping area, establishes an elliptical beam spot and combined target dynamic coupling model, controls the composition of the composite film through the geometric correlation of the beam spot shape and the target material motion, and quickly and accurately calculates and realizes accurate control of the composition of the composite film, thereby improving the accuracy and efficiency of the composition control;

[0012] 3. The interface contamination suppression module uses a laser emitter to emit a high-energy pulsed laser to etch a segmentation groove on the surface of the deposited film layer, reduces interface contamination, and adjusts the beam intensity of the ion beam in combination with boundary beam current attenuation to cooperatively suppress interface contamination. The double mechanism of laser segmentation groove and boundary beam current attenuation cooperatively suppresses the contamination of the interface of the composite film, thereby improving the quality and performance of the composite film.

[0013] Preferably, the parameter inverse solving module establishes an inverse integral equation according to the integral relationship between the composition of the composite film and the beam spot shape parameters and the target material motion trajectory parameters, and the formula is:

[0014]

[0015] wherein, C j is the concentration of the jth element in the composite film, n is the total number of target materials, i is the arrangement number of the target material, j is the number of elements in the composite film, w ij is the weight coefficient of element j in target material i, Y i is the sputtering yield of target material i, T is the total sputtering time, A i is the effective sputtering area of target material i, I(x, y) is the energy density distribution function of the elliptical beam spot, r i (t) is the motion trajectory function of target material i.

[0016] Preferably, the parameter inverse solving module selects initial parameters, performs Taylor expansion on the integral equation, linearizes the integral equation, constructs a matrix equation with the coefficient matrix composed of the coefficient matrix of the integral equation and the deviation vector of the target composition and the current composition.

[0017] Preferably, the parameter inverse solving module solves the matrix equation by the least square method, and gradually approaches the optimal solution through the iterative optimization algorithm until the convergence condition is met.

[0018] The beneficial effect of adopting the above-mentioned further improvements is that the traditional trial-and-error method relies on experience to repeatedly adjust parameters, making it difficult to accurately control the composition of the composite film; while the inverse integral equation solving algorithm is based on the database of the target composition of the composite film and the physical parameters of the target material, which converts the composition control into rigorous mathematical calculations. By solving the matrix equation, it can accurately establish the quantitative relationship between the beam spot shape, the target material movement and the composite film composition, so that the output beam spot shape parameters and the target material movement trajectory parameters are highly matched with the target composition, avoiding composition deviation and greatly improving the accuracy of the composite film composition control.

[0019] Preferably, the target motion control module plans the motion trajectory of the combined target according to the target motion trajectory parameters, and uses the Bezier curve method to generate a smooth and continuous motion trajectory.

[0020] Preferably, the target motion control module monitors the actual position and speed of the target in real time, compares it with the planned trajectory, and performs error compensation through a PID control algorithm.

[0021] The beneficial effect of adopting the above-mentioned further improvements is that the Bezier curve can generate a smooth, continuous curve with a small number of control points, effectively avoiding the motion mutation problems caused by traditional broken line planning. When the combined target moves along the trajectory planned by the Bezier curve, its speed and acceleration changes more smoothly, reducing the impact and vibration of the mechanical structure. This not only helps to extend the service life of the equipment, but also avoids the unstable interaction between the ion beam and the target material caused by unstable movement, thereby ensuring the uniformity of the composite film composition and improving the product yield.

[0022] During the composite film production process, various interference factors, such as slight equipment vibrations and ambient temperature fluctuations, may cause the target to deviate from its planned trajectory. The PID control algorithm, with its rapid response, can quickly detect deviations caused by these interferences and promptly adjust the control variable to quickly return the target to the correct trajectory. This fast dynamic response ensures process stability, enabling the consistent production of high-quality composite film products even under complex and changing operating conditions.

[0023] Preferably, the target motion control module uses a physical constraint inspection method to inspect the beam spot shape parameters and the target motion trajectory parameters, wherein the beam spot shape parameter inspection includes a size limitation inspection and an azimuth feasibility inspection, and the target motion trajectory parameter inspection includes a motion speed limitation and a motion trajectory space limitation.

[0024] The beneficial effect of adopting the above-mentioned further improvements is that each component of the ion beam sputtering equipment has its performance limit, such as the size limit of the beam spot generating device and the speed and acceleration thresholds of the target motion system. Through physical constraint checks, it can be ensured that the beam spot shape parameters (major semi-axis, minor semi-axis, azimuth angle, etc.) and the target motion trajectory parameters (motion speed, acceleration, trajectory range, etc.) are within the allowable range of the equipment. This avoids the beam spot size exceeding the equipment generation capacity due to improper parameter settings, or the impact of excessive target motion speed and acceleration on the mechanical structure, thereby effectively preventing equipment damage, extending equipment service life, and reducing equipment maintenance costs and downtime risks.

[0025] Preferably, the interface contamination suppression module first forms a physical barrier at the interface by a laser emitter, and then adjusts the boundary beam intensity by boundary beam attenuation, thereby suppressing interface contamination by precisely controlling the generation time of the laser dividing groove and the adjustment timing of the boundary beam attenuation.

[0026] Preferably, the interface contamination suppression module is provided with two sets of target tables and sputtering sources in a vacuum chamber, which are shielded by flexible materials in the middle, and pollution-free coating is performed on the two materials by flipping the workbench.

[0027] The beneficial effect of adopting the above-mentioned further improvements is that the laser emitter preferentially forms a physical barrier at the interface, which can promptly block the diffusion path of impurity particles and incompletely reacted atomic clusters left over from the deposition process of the previous film layer to the new film layer, thus establishing the first line of defense before contamination occurs. The boundary beam attenuation then adjusts the boundary beam intensity to further reduce the impurities generated by the ion beam bombarding the target material during the deposition of the new film layer, thereby reducing the risk of contamination at the source. This "isolation first, then source reduction" sequence provides a double guarantee for the pollution suppression effect. Compared with a single action mechanism, it can more efficiently reduce the impurity content at the interface and ensure the purity of the composite film interface.

[0028] A second object of the present invention is to provide an ion beam sputtering composite film control method, comprising any one of the above-mentioned ion beam sputtering composite film control systems, comprising the following steps:

[0029] S1. The parameter inverse solution module collects the target component composition of the composite film and the pre-stored target material physical parameter data, takes the target component composition of the composite film as input, uses the inverse integral equation solution algorithm, and outputs the beam spot shape parameters and target material motion trajectory parameters by solving the matrix equation;

[0030] S2, the target material motion control module establishes a Cartesian coordinate system with the target material surface as the x, y plane and the vertical target material surface direction as the z axis, determines the overlapping area of the beam spot and the target material at different times according to the beam spot shape parameter and the target material motion trajectory parameter, obtains the sputtering amount of the target material according to the action time of the overlapping area, establishes an elliptical beam spot and combined target dynamic coupling model, and controls the composition of the composite film through the geometric correlation of the beam spot shape and the target material motion;

[0031] S3, the interface contamination suppression module uses a laser emitter to emit a high-energy pulsed laser to etch a segmentation groove on the surface of the deposited film layer, reduces interface contamination, and adjusts the beam current intensity of the ion beam in combination with boundary beam current attenuation to cooperatively suppress interface contamination.

[0032] In addition to the purposes, features and advantages described above, the present application has other purposes, features and advantages. The present application will be further described in detail below with reference to the drawings. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 is the overall flowchart of the present application;

[0034] Figure 2 is the ion beam sputtering diagram of the present application;

[0035] Figure 3 is the method flowchart of the present application.

[0036] The meanings of various reference numerals in the drawings are as follows:

[0037] 100, parameter reverse solving module; 200, target material motion control module; 300, interface contamination suppression module. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0039] At present, the traditional ion beam sputtering method of composite film is not only time-consuming and labor-intensive, greatly increasing the R&D cost and production cycle, but also difficult to achieve high-precision control of the composite film composition due to the lack of accurate mathematical models and theoretical guidance. In order to be able to calculate the corresponding beam spot shape parameters and target material motion trajectory parameters according to the target composition of the composite film by establishing an inverse integral equation, the beam spot shape and the target material motion are geometrically correlated to accurately control the composition of the composite film, thereby improving the accuracy and efficiency of the composite film composition control. At the same time, a dual mechanism of interface contamination suppression is adopted to suppress the contamination of the composite film interface and improve the quality and performance of the composite film.

[0040] Therefore, the present invention proposes to collect the target component composition of the composite film and the pre-stored target material physical parameter data through a parameter inverse solution module, use the inverse integral equation solution algorithm to output the beam spot shape parameters and the target material motion trajectory parameters, and the target material motion control module establishes a dynamic coupling model of the elliptical beam spot and the combined target. The interface contamination suppression module uses a laser emitter to emit high-energy pulsed laser to etch a dividing groove on the surface of the deposited film layer to reduce interface contamination, and combines the boundary beam attenuation to adjust the beam intensity of the ion beam, and synergistically suppress interface contamination.

[0041] The details are as follows:

[0042] like Figure 1 As shown, one of the purposes of the present invention is to provide an ion beam sputtering composite film control system, including a parameter inverse solution module 100, a target motion control module 200 and an interface contamination suppression module 300;

[0043] The parameter inverse solution module 100 collects the target component composition of the composite film and the pre-stored target material physical parameter data, takes the target component composition of the composite film as input, uses the inverse integral equation solution algorithm, and outputs the beam spot shape parameters and target material motion trajectory parameters by solving the matrix equation.

[0044] The target components are converted into constraints on the beam spot shape parameters and target material motion parameters by using the inverse integral equation solving algorithm. By solving the matrix equation, the beam spot major semi-axis, minor semi-axis, azimuth angle, and target material motion speed, trajectory and other parameters that meet the target component requirements are obtained.

[0045] In order to better establish the inverse integral equation, the parameter inverse solution module 100 establishes the inverse integral equation according to the integral relationship between the composite film composition and the beam spot shape parameters and the target material motion trajectory parameters. The formula is:

[0046]

[0047] Among them, C jis the concentration of the jth element in the composite film, n is the total number of targets, i is the arrangement number of targets, j is the number of elements in the composite film, w ij is the weight coefficient of element j in target i, Y i is the sputtering yield of target material i, T is the total sputtering time, A i is the effective sputtering area of ​​target i, I(x,y) is the energy density distribution function of the elliptical beam spot, r i (t) is the motion trajectory function of target i.

[0048] Collect target component composition data of the composite film, including the mass fraction or atomic fraction of each element, and extract the atomic weight, sputtering yield and density parameters of the relevant target material from the pre-stored target material physical parameter database;

[0049] Based on the physical process of ion beam sputtering composite films, the mechanism by which beam spot shape and target motion affect the composition of the composite film is clarified. The size, direction, and energy distribution of the elliptical beam spot, as well as the speed and trajectory of the target, will change the interaction time and area between the ion beam and the target, thereby affecting the sputtering amount of the target. The ratio of the sputtering amount of each target directly determines the final composition of the composite film.

[0050] Based on the above physical process, a forward integral relationship is established between the composition of the composite film and the beam spot shape parameters and the target motion trajectory parameters. Taking the content of a certain element in the composite film as an example, it is equal to the weight coefficient of the element in each target material multiplied by the sum of the sputtering amounts of the corresponding target materials. The sputtering amount of each target material requires the integral calculation of the time and space of the ion beam acting on the target surface, which involves multiple variables such as the energy density distribution function of the beam spot and the target motion trajectory function. In this way, a forward mathematical model describing the formation process of the composite film composition is constructed;

[0051] The forward integral relationship is reversed, with the target composition of the composite film as the known condition and the beam spot shape parameters (such as the major semi-axis, minor semi-axis, and azimuth angle) and target trajectory parameters (such as velocity and trajectory curve parameters) as the unknown quantities. Through mathematical transformation and derivation, the equation originally used to calculate the composite film composition is converted into an inverse integral equation that solves the process parameters based on the target composition. This establishes a mathematical connection from the target composition to the actual operational process parameters, which is expressed in the above formula.

[0052] In order to reduce the complexity of the inverse integral equation, the parameter inverse solving module 100 selects initial parameters, performs Taylor expansion on the integral equation, linearizes it, and constructs a matrix equation using the coefficients of the integral equation and the deviation vector between the target component and the current component.

[0053] Its matrix equation is:

[0054]

[0055] Wherein, A is a coefficient matrix, Δp is a beam spot shape parameter adjustment amount, Δq is a target material motion trajectory parameter adjustment amount, and b is a deviation vector of a target component and a current component.

[0056] The inverse integral equation is generally nonlinear, and it is difficult to directly solve. To simplify the calculation, we perform an approximate treatment on the entire equation near a set of initially set beam spot shape and target material motion parameters. This process is like selecting a small area on a complex curved surface and regarding it as an approximate plane. By analyzing how the composition of the composite film will change when these parameters change slightly, the originally complex nonlinear relationship is converted into a relatively simple linear relationship.

[0057] After linearization, the variable relationship in the equation presents a linear superposition characteristic. All the beam spot shape parameters (such as major semi-axis, minor semi-axis, etc.) and target material motion trajectory parameters (such as motion speed, path offset, etc.) to be solved are collected and regarded as an unknown parameter vector. At the same time, the difference between the target component and the current component and the related information of the influence of parameter changes on the composition of the composite film are sorted into a series of linear equations. Then, the coefficients of these equations are extracted and arranged into a matrix. The unknown parameter vector and the composition difference vector are respectively regarded as the unknowns of the matrix equation and the value on the right side of the equation. In this way, the original inverse integral equation is converted into a standard matrix equation form. By solving this matrix equation, the specific parameters that need to be adjusted to achieve the target component, the beam spot shape, and the target material motion trajectory can be obtained.

[0058] In order to better solve the matrix equation, the parameter inverse solving module 100 adopts the least square method to solve the matrix equation, and gradually approaches the optimal solution through an iterative optimization algorithm until the convergence condition is met.

[0059] Substitute the initial parameters into the elliptical beam spot and target material coupling model to calculate the theoretical content of each element of the composite film. Compare the theoretical content with the target component to calculate the deviation value of each element (for example, the target content is 50%, the calculated value is 45%, and the deviation is 5%). Then, the sum of the squares of all deviations is calculated to obtain the initial error function value, which reflects the deviation degree of the current parameters from the target.

[0060] Take "reducing the error function" as the target, and adjust the parameters through iteration. After each iteration, the composition of the composite film is recalculated and the error function is evaluated. If the error function decreases by less than a preset threshold (such as an error change rate of less than 0.1%) compared with the previous iteration, or the absolute value of the error is less than the target accuracy (such as an element content deviation of less than 0.3%), it is considered that the convergence condition is met, and the iteration is stopped.

[0061] Further, the target material motion control module 200 establishes a Cartesian coordinate system with the target material surface as the x, y plane and the vertical target material surface direction as the z axis, determines the overlapping area of the beam spot and the target material at different times according to the beam spot shape parameter and the target material motion trajectory parameter, obtains the sputtering amount of the target material according to the action time of the overlapping area, establishes an elliptical beam spot and combined target dynamic coupling model, and controls the composition of the composite film through the geometric correlation of the beam spot shape and the target material motion.

[0062] In order to make the motion of the target material more stable, the target material motion control module 200 plans the motion trajectory of the combined target according to the target material motion trajectory parameter, and generates a smooth and continuous motion trajectory by using the Bezier curve method.

[0063] According to the composition distribution requirement of the composite film, a plurality of control points are selected, the intermediate control points determine the curve shape, the trajectory curvature is changed by adjusting the control point position, the control point position needs to meet the physical constraint, the plurality of Bezier curve segments are connected end to end to ensure the continuity of the first derivative at the connection point.

[0064] A smooth and continuous curve is generated by a small number of control points, which effectively avoids the motion mutation problem caused by traditional polyline planning. When the combined target moves according to the trajectory planned by the Bezier curve, the changes of its speed and acceleration are more stable, reducing the impact and vibration of the mechanical structure. This not only helps to prolong the service life of the equipment, but also avoids the instability of the ion beam and the target material caused by unstable motion, thereby ensuring the uniformity of the composition of the composite film and improving the product yield.

[0065] In order to be able to real-time regulate and control the motion trajectory of the target material, the target material motion control module 200 monitors the actual position and speed of the target material in real time, compares with the planned trajectory, and compensates for the error through the PID control algorithm.

[0066] Through sensors such as photoelectric encoders and laser range finders, the current position (X, Y coordinates) and motion speed (vector value) of the target material are obtained by high-frequency sampling (such as 1000 Hz), and the theoretical position and speed of the planned trajectory at the same time are recorded synchronously, and the deviation between the actual position and the theoretical position is calculated, which is used as the input signal of the PID algorithm.

[0067] The compensation amount calculated by proportion, integration and differentiation is superimposed according to the weight to obtain the total control signal, the control signal is input to the driver of the servo motor or linear guide, the acceleration or direction of the target material motion is adjusted, the PID parameters are dynamically adjusted according to the motion state of the target material, the motion error of the target material is converted into a precise compensation signal, and a dynamic closed-loop regulation is formed. The key lies in adjusting the PID parameters according to the characteristics of the equipment to balance the response speed and stability, and finally realize the millimeter-level (even micron-level) precision control of the motion trajectory of the target material, meeting the needs of high-precision processes such as composite film preparation.

[0068] In order to better set the constraint conditions, the target motion control module 200 uses a physical constraint checking method to check the beam spot shape parameters and the target motion trajectory parameters. The beam spot shape parameter checking includes a size limit check and an azimuth feasibility check, and the target motion trajectory parameter checking includes a motion speed limit and a motion trajectory space limit.

[0069] Size limitation check: The ion beam generator has minimum and maximum beam spot size limitations. For example, if the minimum beam spot resolution of the device is 10 microns and the maximum beam spot diameter is 100 microns, then the values ​​of a and b must be within this range. Otherwise, the beam spot cannot be generated on the device or exceeds the controllable range of the device.

[0070] Azimuth angle feasibility check: The azimuth angle determines the direction of the beam spot. It is necessary to ensure that its value is within the adjustable range of the equipment. Consider the compatibility of the beam spot direction with the target layout and the internal structure of the equipment to avoid the beam spot bombarding the non-target area of ​​the equipment or interfering with other components due to the azimuth angle setting;

[0071] Movement speed limit: The target motion system has maximum and minimum operating speed limits. For example, the minimum stable operating speed of the mechanical transmission system is 0.1 mm / s and the maximum speed is 10 mm / s. Exceeding this range may cause unstable movement or equipment damage;

[0072] Motion trajectory spatial constraints: The target's trajectory cannot exceed the spatial limits of the equipment's vacuum chamber or work area. Comparing the calculated trajectory coordinates with the equipment's spatial boundaries ensures that all motion positions are within the permitted range.

[0073] In addition, the interface contamination suppression module 300 uses a laser emitter to emit high-energy pulsed laser to etch dividing grooves on the surface of the deposited film layer to reduce interface contamination, and combines boundary beam attenuation to adjust the beam intensity of the ion beam, synergistically suppressing interface contamination.

[0074] To better suppress interface contamination, the interface contamination suppression module 300 first forms a physical barrier at the interface using a laser emitter, and then adjusts the boundary beam intensity by attenuating the boundary beam. This suppresses interface contamination by precisely controlling the generation time of the laser segmentation grooves and the adjustment timing of the boundary beam attenuation.

[0075] When deposition of one film is about to be completed and the time left to switch to the next film layer is set (e.g., 10-20 seconds of deposition time remaining), the laser segmentation groove generation unit starts the preheating process and adjusts the laser transmitter power, pulse frequency and other parameters to the preset working state. At the same time, the boundary beam attenuation unit begins to monitor the current beam intensity and preliminarily calculates the target intensity of the boundary beam attenuation based on the deposition status of the current film layer and the process requirements of the next film layer.

[0076] When the film layer is switched, the laser segmentation groove generation unit immediately emits a high-energy pulsed laser to rapidly etch a laser segmentation groove at the interface between the deposited film layer and the film layer to be deposited. The entire process must be completed in an extremely short time (e.g., milliseconds) to avoid affecting the initial deposition of the next film layer. Simultaneously with the laser segmentation groove generation, the boundary beam attenuation unit quickly adjusts the beam intensity in the boundary area to the target intensity, reducing impurities generated by beam impact and damage to the interface of the deposited film layer.

[0077] In order to prevent mutual interference between different sputtering sources, the interface contamination suppression module 300 sets two sets of target tables and sputtering sources in the vacuum chamber, shielded by flexible materials in the middle, and performs pollution-free coating on the two materials by flipping the workbench;

[0078] like Figure 2 As shown, the flexible material is located between target 1 and target 2. The lifting or lowering action is triggered by the flipping command of the rotary table. When the rotary table receives a material for deposition, the flexible shield rises to isolate the other set of target tables from the sputtering source to prevent material contamination. When the rotary table flips, the flexible shield lowers to open the corresponding target table for deposition of the next material.

[0079] The rotating worktable serves as a carrier for material deposition. It realizes the alternating reception of two materials by flipping, and works in conjunction with the flexible shielding material to ensure that the coating process is pollution-free. Sputtering source 1 and sputtering source 2 maintain the original relationship between ion beam bombardment and material sputtering, providing coating materials for the workpiece table.

[0080] A second object of the present invention is to provide an ion beam sputtering composite film control method, including any one of the above-mentioned ion beam sputtering composite film control systems, comprising the following steps:

[0081] S1. The parameter inverse solution module 100 collects the target component composition of the composite film and the pre-stored target material physical parameter data, takes the target component composition of the composite film as input, uses the inverse integral equation solution algorithm, and outputs the beam spot shape parameters and the target material motion trajectory parameters by solving the matrix equation;

[0082] S2, the target material motion control module 200 establishes a Cartesian coordinate system with the target material surface as the x, y plane and the vertical target material surface direction as the z axis, determines the overlapping area of the beam spot and the target material at different times according to the beam spot shape parameter and the target material motion trajectory parameter, obtains the sputtering amount of the target material according to the action time of the overlapping area, establishes an elliptical beam spot and combined target dynamic coupling model, and controls the composition of the composite film through the geometric correlation of the beam spot shape and the target material motion;

[0083] S3, the interface contamination inhibition module 300 emits high-energy pulsed laser by using a laser emitter, etches a segmentation groove on the surface of the deposited film layer, reduces the interface contamination, adjusts the beam current intensity of the ion beam in combination with the boundary beam current attenuation, and cooperatively inhibits the interface contamination.

[0084] The basic principle, main features and advantages of the present application are shown and described above. It should be understood by those skilled in the art that the present application is not limited by the above-mentioned embodiments, and the above-mentioned embodiments and descriptions in the specification are only preferred examples of the present application and are not intended to limit the present application. Without departing from the spirit and scope of the present application, various changes and improvements can be made to the present application, and these changes and improvements all fall within the scope of the present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. An ion beam sputtering composite film control system, characterized in that: It comprises a parameter inverse solution module (100), a target material motion control module (200) and an interface pollution suppression module (300); The parameter reverse solution module (100) collects target component composition of the composite film and pre-stored target material physical parameter data, takes the target component composition of the composite film as input, utilizes the reverse integral equation solution algorithm, and outputs beam spot shape parameters and target material motion trajectory parameters by solving the matrix equation; The target material motion control module (200) establishes a Cartesian coordinate system with the target material surface as an x, y plane and a direction perpendicular to the target material surface as a z axis, determines the overlapping area between the beam spot and the target material at different times based on beam spot shape parameters and target material motion trajectory parameters, obtains the sputtering amount of the target material based on the action time of the overlapping area, establishes a dynamic coupling model of the elliptical beam spot and the combined target, and controls the composition of the composite film through the geometric association between the beam spot shape and the target material motion; The interface contamination suppression module (300) utilizes a laser emitter to emit high-energy pulsed laser to etch a dividing groove on the surface of the deposited film layer, thereby reducing interface contamination, and in combination with boundary beam attenuation, adjusts the beam intensity of the ion beam to synergistically suppress interface contamination.

2. The ion beam sputtering composite film control system according to claim 1, characterized in that: The parameter reverse solution module (100) establishes a reverse integral equation based on the integral relationship between the composite film components and the beam spot shape parameters and the target material motion trajectory parameters, and the formula is: Among them, C j is the concentration of the jth element in the composite film, n is the total number of targets, i is the arrangement number of targets, j is the number of elements in the composite film, w ij is the weight coefficient of element j in target i, Y i is the sputtering yield of target material i, T is the total sputtering time, A i is the effective sputtering area of ​​target i, I(x,y) is the energy density distribution function of the elliptical beam spot, r i (t) is the motion trajectory function of target i.

3. The ion beam sputtering composite film control system according to claim 2, characterized in that: The parameter inverse solution module (100) selects initial parameters, performs Taylor expansion on the integral equation, performs linearization processing, and constructs a matrix equation using the coefficients of the integral equation to form a coefficient matrix and a deviation vector between the target component and the current component.

4. The ion beam sputtering composite film control system according to claim 3, characterized in that: The parameter inverse solution module (100) uses the least square method to solve the matrix equation and gradually approaches the optimal solution through an iterative optimization algorithm until a convergence condition is met.

5. The ion beam sputtering composite film control system according to claim 1, characterized in that: The target material motion control module (200) plans the motion trajectory of the combined target according to the target material motion trajectory parameters, and uses the Bezier curve method to generate a smooth and continuous motion trajectory.

6. The ion beam sputtering composite film control system according to claim 5, characterized in that: The target material motion control module (200) monitors the actual position and speed of the target material in real time, compares them with the planned trajectory, and performs error compensation through a PID control algorithm.

7. The ion beam sputtering composite film control system according to claim 1, characterized in that: The target material motion control module (200) uses a physical constraint inspection method to inspect beam spot shape parameters and target material motion trajectory parameters, wherein the beam spot shape parameter inspection includes size restriction inspection and azimuth feasibility inspection, and the target material motion trajectory parameter inspection includes motion speed restriction and motion trajectory space restriction.

8. The ion beam sputtering composite film control system according to claim 1, characterized in that: The interface pollution suppression module (300) first forms a physical barrier at the interface by a laser emitter, and then adjusts the boundary beam intensity by boundary beam attenuation, thereby suppressing interface pollution by precisely controlling the generation time of the laser segmentation groove and the adjustment timing of the boundary beam attenuation.

9. The ion beam sputtering composite film control system according to claim 1, characterized in that: The interface pollution suppression module (300) is provided with two sets of target tables and sputtering sources in a vacuum chamber, which are shielded by a flexible material in the middle, and pollution-free coating is performed on the two materials by turning the workbench.

10. A method for controlling an ion beam sputtering composite film, comprising the ion beam sputtering composite film control system according to any one of claims 1 to 9, characterized in that: The following steps are involved: S1, a parameter reverse solution module (100) collects target component composition of the composite film and pre-stored target material physical parameter data, takes the target component composition of the composite film as input, uses a reverse integral equation solution algorithm, and outputs beam spot shape parameters and target material motion trajectory parameters by solving a matrix equation; S2, a target material motion control module (200) establishes a Cartesian coordinate system with the target material surface as an x, y plane and a direction perpendicular to the target material surface as a z axis, determines the overlapping area between the beam spot and the target material at different times based on beam spot shape parameters and target material motion trajectory parameters, calculates the sputtering amount of the target material based on the action time of the overlapping area, establishes a dynamic coupling model of the elliptical beam spot and the combined target, and controls the composition of the composite film through the geometric association between the beam spot shape and the target material motion; S3, the interface contamination suppression module (300) uses a laser emitter to emit high-energy pulsed laser to etch a dividing groove on the surface of the deposited film layer to reduce interface contamination, and combines boundary beam attenuation to adjust the beam intensity of the ion beam to synergistically suppress interface contamination.

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