A dynamic bias circuit to boost DEVM

By using BiCMOS technology to provide a reference voltage VREF that varies with the HBT junction temperature for the dynamic bias circuit, the problem that traditional EVM calculations cannot capture dynamic behavior is solved, and signal quality stability is achieved over a wide temperature range.

CN120768260BActive Publication Date: 2025-11-14成都明夷电子科技股份有限公司
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Patent Information

Application Number
CN202511284742.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2025-09-10
Publication Date
2025-11-14
Estimated Expiration
2045-09-10

AI Technical Summary

Technical Problem

Traditional EVM calculation methods cannot capture dynamic behavior, causing power gain to decrease with junction temperature changes, leading to detection errors on the receiver side, especially in applications with a wide temperature range where DEVM performance deteriorates.

Method used

Using BiCMOS technology, a reference voltage VREF that varies with the HBT junction temperature is provided for the output stage dynamic bias circuit. Through the combination of power-on startup unit, bandgap reference voltage unit and high temperature compensation unit, the power gain is kept stable during long data packet transmission.

Benefits of technology

It effectively compensates for the drop in power gain, optimizes the performance of DEVM, and ensures stable signal quality during long data packet transmissions.

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Abstract

This invention relates to the field of wireless communication technology, specifically to a dynamic bias circuit for improving the DEVM (Digital Source Bipolar Transmission). Utilizing the high density of BiCMOS, a reference voltage VREF that varies with the junction temperature of the high-voltage transformer (HBT) is provided to the output stage dynamic bias circuit. When the amplifier operates in long data packet transmission mode, the HBT junction temperature increases, and the amplifier's power gain begins to decrease. The voltage source bias circuit PTAT detects the temperature rise, and the reference voltage VREF increases to compensate for the gain decrease. The gain remains stable throughout the long data packet transmission, thereby optimizing the DEVM's performance.
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