Multifunctional driving circuit
By designing a multifunctional drive circuit that combines voltage conversion, positive and negative voltage conversion, operation and emission control, and path switching modules, the problem of large size in traditional gallium nitride RF power transistor drive circuits has been solved, and the miniaturization and integration of the drive circuit module have been achieved.
Patent Information
- Application Number
- CN202510957623.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-11
- Publication Date
- 2025-10-24
AI Technical Summary
Traditional gallium nitride (GaN) RF power transistor driver circuits suffer from large module size due to their characteristics, making it impossible to effectively integrate four independent sub-modules.
A multifunctional drive circuit is designed. By combining a voltage conversion module, a positive and negative voltage conversion module, an operational follower module, and a path switch module, a single module can replace the functions of four independent sub-modules, thus reducing the size of the drive circuit.
This achieved miniaturization of the drive circuit module, simplified the circuit structure, and improved the circuit's integration and stability.
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Figure CN120834708A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of driving circuit, in particular to a multifunctional driving circuit. BACKGROUND
[0002] The commonly used driving circuit includes a gallium nitride radio frequency multifunctional driving circuit; 1, the gallium nitride radio frequency power transistor is a depletion mode mosfet, when the gate is not powered, the channel is in an on state, so it needs to provide a gate negative voltage power supply before providing a positive voltage power supply to the drain; 2, the gallium nitride radio frequency power transistor at different temperatures, due to the characteristics of its semiconductor material, the electron mobility changes with different temperatures, so in order to stabilize the static current in the working state, it needs to adjust its gate voltage at different temperatures; 3, the gallium nitride radio frequency power transistor has heteroepitaxy, so its gate needs to provide enough gate current when the output radio frequency power increases during normal operation; 4, in addition to power supply, the radio frequency module generally needs an enable port to control whether the whole module works, and the enable is directly to control whether the gallium nitride radio frequency power transistor works.
[0003] The above four characteristics are the problems that need to be considered when using the gallium nitride radio frequency power transistor, the traditional method is to solve the problems respectively by making an independent sub-module, and then four sub-modules are combined to form a driving circuit module, which causes the driving circuit module to be large in size, and there is a technical problem of large size of the driving circuit module, and a multifunctional driving circuit is needed.
[0004] It should be noted that the above information disclosed in the background section of the present application is only used to understand the background of the present application, and therefore, it can contain information that does not constitute prior art. SUMMARY
[0005] The purpose of the present application is to provide a multifunctional driving circuit to solve the above problems.
[0006] In order to achieve the above purpose, the present application provides the following technical scheme:
[0007] A multifunctional driving circuit, comprising:
[0008] A voltage conversion module comprising a converter;
[0009] A positive and negative voltage conversion module comprising a charge pump voltage inverter;
[0010] An op-amp radio module comprising an op-amp amplifier;
[0011] The pass switch module comprises a triode, an OR gate circuit and a P-channel MOSFET;
[0012] The voltage conversion module is electrically connected with the op-amp follower module and the pass switch module through the positive and negative voltage conversion module.
[0013] In an alternative embodiment, the voltage conversion module is connected in series with the positive and negative voltage conversion module.
[0014] The positive and negative voltage conversion module is connected in parallel with the op-amp follower module and the pass switch module.
[0015] In an alternative embodiment, the voltage conversion module further comprises two decoupling capacitors for filtering power supply noise, stabilizing the supply voltage and providing transient current compensation.
[0016] The converter is a DC-DC converter or a linear voltage regulator, which is used to convert the system voltage into a stable low-ripple voltage.
[0017] In an alternative embodiment, the charge pump voltage inverter is a non-regulated charge pump voltage inverter.
[0018] The positive and negative voltage conversion module further comprises a decoupling capacitor, a resistor and a charge inverter balancing capacitor electrically connected with the charge pump voltage inverter.
[0019] In an alternative embodiment, the number of decoupling capacitors, resistors and charge inverter balancing capacitors is one.
[0020] In an alternative embodiment, the op-amp follower module further comprises a diode to keep the quiescent current constant at different temperatures.
[0021] The op-amp amplifier is connected in parallel with the diode.
[0022] In an alternative embodiment, the pass switch module comprises two triodes, an OR gate circuit and a P-channel MOSFET.
[0023] The positive and negative voltage conversion module and the op-amp follower module are electrically connected with the pass switch module through one of the triodes.
[0024] In an alternative embodiment, one of the triodes is electrically connected with the positive and negative voltage conversion module and the op-amp follower module through a resistor at one end and is electrically connected with the OR gate circuit and the P-channel MOSFET at the other end.
[0025] The other triode is electrically connected with the other interface of the OR gate circuit and the P-channel MOSFET.
[0026] The beneficial effect of the present application is to provide a multifunctional drive circuit, which is made by using voltage conversion module, positive and negative voltage conversion module, operational amplifier follow-up module and pass switch module in cooperation, to replace four independent sub-module drive circuits, to realize the effect of using a single module including four circuits in the manufacturing process of the drive circuit module, and to reduce the size of the drive circuit module. BRIEF DESCRIPTION OF DRAWINGS
[0027] In order to more clearly illustrate the specific embodiments of the present application or the technical solutions in the prior art, the drawings needed in the specific embodiments or prior art description will be briefly introduced below. Obviously, the drawings in the following description are some embodiments of the present application, and those skilled in the art can also obtain other drawings according to these drawings without creative labor.
[0028] Figure 1 A circuit schematic diagram of a multifunctional drive circuit provided by the embodiments of the present disclosure.
[0029] In the figure: 1, voltage conversion module; 11, converter;
[0030] 2, positive and negative voltage conversion module; 21, charge pump voltage inverter;
[0031] 3, operational amplifier follow-up module; 31, operational amplifier;
[0032] 4, pass switch module; 41, triode; 42, or gate circuit; 43, P-channel mosfet. DETAILED DESCRIPTION
[0033] In order to make the purpose, technical scheme and advantages of the embodiments of the present application more clear, the technical scheme of the present application will be described clearly and completely below in combination with the drawings. Obviously, the described embodiments are some of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.
[0034] In this document, when referring to a first component being on a second component, it can mean that the first component can be directly formed on the second component, or a third component can be interposed between the first component and the second component. In addition, in the drawings, in order to effectively describe the technical content, the thickness of the components can be exaggerated or reduced.
[0035] As used herein, the phrases “in one embodiment,” “according to one embodiment,” “in some embodiments,” and the like generally mean the particular feature, structure, or characteristic following the phrase can be included in at least one embodiment of the present disclosure. Thus, the particular feature, structure, or characteristic can be included in more than one embodiment of the present disclosure, so that the phrases, as used herein, do not necessarily refer to the same embodiment. As used herein, the terms “for example,” “e.g.,” and the like indicate that the named item is a non-exclusive example. Any embodiment, aspect, or design described herein as “example” or “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments, aspects, or designs. Rather, the use of the terms “example,” “exemplary,” and the like is intended to present concepts in a concrete manner.
[0036] It should be noted that like reference numerals and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
[0037] Some embodiments of the present application will now be described in detail in connection with the accompanying drawings. The embodiments described below and features in the embodiments can be combined with each other, if not in conflict.
[0038] With reference to Figure 1 At least one embodiment provides a multifunctional driving circuit, comprising: a voltage conversion module 1 comprising a converter 11 for converting voltage; a positive and negative voltage conversion module 2 comprising a charge pump voltage inverter 21 for changing the direction of voltage; an operational amplifier radiation module 3 comprising an operational amplifier 31 for providing high current load capability for output voltage, so that the voltage signal output by the previous stage circuit can maintain relatively stable voltage when driving the subsequent load (such as a gallium nitride RF power transistor that can be connected subsequently), while providing sufficient current to ensure normal operation of the load; a pass switch module 4 comprising a triode 41, an or gate circuit 42, and a P-channel mosfet 43; the voltage conversion module 1 is electrically connected to the positive and negative voltage conversion module 2, the operational amplifier radiation module 3, and the pass switch module 4.
[0039] In some embodiments, the voltage conversion module 1 and the positive and negative voltage conversion module 2 are connected in series; the positive and negative voltage conversion module 2 is connected in parallel with the operational amplifier radiation module 3 and the pass switch module 4.
[0040] In some embodiments, the voltage conversion module 1 further comprises two decoupling capacitors, C3 and C4; both C3 and C4 are power decoupling capacitors for filtering power noise, stabilizing power voltage, and providing transient current compensation; the converter 11 is a DC-DC converter or a linear regulated power supply for converting system voltage to a stable low-ripple voltage.
[0041] In some embodiments, the charge pump voltage inverter 21 is a non-regulated charge pump voltage inverter; the positive and negative voltage conversion module 2 further comprises a decoupling capacitor, a resistor and a charge inverter balancing capacitor electrically connected with the charge pump voltage inverter 21; the decoupling capacitor is C1, the resistor is an enable current limiting resistor R1, and the charge inverter balancing capacitor is C5; the positive and negative voltage conversion module 2 converts +5V voltage into -5V voltage.
[0042] In some embodiments, the number of decoupling capacitors, resistors and charge inverter balancing capacitors is one.
[0043] In some embodiments, the operational amplifier module 3 further comprises a diode to make the static current constant at different temperatures; the resistor is a high-precision potentiometer R6 and a clamping resistor R5 to make the voltage of the potentiometer not exceed the limit value; the diode is D1 to make the voltage drop of the diode present opposite characteristics to compensate VGS voltage when the temperature changes, so that the static current of the gallium nitride RF power transistor is constant at different temperatures; the operational amplifier 31 is connected in parallel with the diode.
[0044] In some embodiments, the pass switch module 4 comprises two triodes 41, an OR gate 42 and a P-channel mosfet 43; the positive and negative voltage conversion module 2 and the operational amplifier module 3 are electrically connected with the pass switch module 4 through one of the triodes 41.
[0045] In some embodiments, one of the triodes 41 is electrically connected to the positive and negative voltage conversion module 2 and the operational amplifier module 3 through a resistor at one end, and is electrically connected to the or gate circuit 42 and the P-channel mosfet 43 at the other end; the other triode 41 is electrically connected to the other interface of the or gate circuit and the P-channel mosfet 43; the two triodes 41 are NPN triodes, and the pass switch module 4 further comprises resistors R2, R4, R7, R8, R9, R10 and R11; when the resistor R11 receives the-5V voltage generated by the positive and negative voltage conversion module 2, the first triode 41 is turned on, the pin 2 of the or gate circuit 42 is at low level, at this time, if the pin 1 of the first triode 41 enables the input high level, the pin 4 of the or gate circuit 42 outputs high level, the other triode 41 is turned off, the pin 1 of the P-channel mosfet 43 inputs high level, the S pole and the D pole of the P-channel mosfet 43 are turned off, and the P-channel mosfet 43 is not turned on; only when the pin 1 (enable EN input low level) and the pin 2 (the second part generates-5V) of the or gate circuit 42 are low level at the same time, the pin 4 of the or gate circuit 42 outputs low level, the other triode 41 is turned on, the pin 1 of the P-channel mosfet 43 inputs low level, the S pole and the D pole of the P-channel mosfet 43 are turned on, and VDS=Vcc.
[0046] In the description of the embodiments of the application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.
[0047] In the description of the application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore cannot be understood as a limitation on the application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.
[0048] While this patent document contains many specifics, these should not be construed as limiting the scope of any invention or claims hereof, but as merely providing description of particular implementations of certain aspects. Certain features that are described in this patent document in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination. Moreover, although features can be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination and the claimed combination can be directed to a subcombination or variation of a subsystem.
[0049] Similarly, while operations are described in a particular order, this should not be understood as requiring such an order, or that all illustrated operations be performed, to achieve desirable results. Moreover, the separation of various system components in the embodiments described herein should not be understood as requiring such separation in all embodiments.
[0050] Only a few implementations and examples are described and other implementations, enhancements and variations can be made based on what is described and illustrated in this patent document.
[0051] While several embodiments have been provided in this disclosure, it should be understood that the disclosed systems and methods might be embodied in many other specific forms without departing from the spirit or scope of the present disclosure. The present examples are therefore to be considered as illustrative and not restrictive, and the intention is not to limit the disclosure to the details given herein. For example, the various elements or components can be combined or integrated in another system or certain features can be omitted, without departing from the scope of the disclosure.
Claims
1. A multi-function drive circuit, characterized by comprising: The utility model relates to a kind of multi-functional drive circuit, including: Voltage conversion module (1), including converter (11); Positive and negative voltage conversion module (2), including charge pump voltage inverter (21); Operational amplifier radiation module (3), including operational amplifier amplifier (31); Passage switch module (4), including triode (41), or gate circuit (42) and P channel mosfet (43); The voltage conversion module (1) is electrically connected with operational amplifier radiation module (3) and passage switch module (4) by positive and negative voltage conversion module (2).
2. The multi-functional drive circuit according to claim 1, wherein: The voltage conversion module (1) is connected in series with the positive and negative voltage conversion module (2); The positive and negative voltage conversion module (2) is connected in parallel with the operational amplifier radiation module (3) and the passage switch module (4).
3. The multi-functional drive circuit according to claim 1, wherein: The voltage conversion module (1) further comprises two decoupling capacitors for filtering power supply noise, stabilizing power supply voltage and providing transient current compensation; The converter (11) is a DC-DC converter or a linear voltage regulator, for converting system voltage into stable low-ripple voltage.
4. The multi-functional drive circuit according to claim 1, wherein: The charge pump voltage inverter (21) is a non-regulated charge pump voltage inverter; The positive and negative voltage conversion module (2) further comprises a decoupling capacitor, a resistor and a charge inverter balancing capacitor electrically connected with the charge pump voltage inverter (21).
5. The multi-functional drive circuit according to claim 4, wherein: The number of the decoupling capacitor, the resistor and the charge inverter balancing capacitor is one.
6. The multi-functional drive circuit according to claim 1, wherein: The operational amplifier radiation module (3) further comprises a diode for keeping static current constant at different temperatures; The operational amplifier amplifier (31) is connected in parallel with the diode.
7. The multi-functional drive circuit according to claim 1, wherein: The passage switch module (4) comprises two triodes (41), an or gate circuit (42) and a P channel mosfet (43); The positive and negative voltage conversion module (2) and the operational amplifier radiation module (3) are electrically connected with the passage switch module (4) through one of the triodes (41).
8. The multi-functional drive circuit according to claim 7, wherein: One of the triodes (41) is electrically connected with the positive and negative voltage conversion module (2) and the operational amplifier radiation module (3) through a resistor at one end, and is electrically connected with the or gate circuit (42) and the P channel mosfet (43) at the other end; The other triode (41) is electrically connected with the other interface of the or gate circuit (42) and the P channel mosfet (43).