Miniaturized high-voltage large-current SIP packaging three-phase bridge driving module

Abstract

A miniaturized high-voltage large-current SIP (Session Initiation Protocol) packaging three-phase bridge driving module relates to the technical field of integrated circuits, and comprises an SIP packaging multi-layer PCB (Printed Circuit Board) substrate and a three-phase bridge power circuit, and the three-phase bridge power circuit is arranged on a top-layer PCB substrate; a middle filling layer is arranged between two adjacent layers of PCB substrates; a plurality of metal through holes are formed below the power tubes on the top PCB substrate, and penetrate through the PCB substrates and the middle filling layers; all layers of PCB substrates, except the PCB substrate on the top layer, are provided with laid copper in the wiring area, the area of the laid copper covers the area where the metal through holes are located, and the laid copper is communicated with the metal through holes. The low-cost PCB substrate is adopted to replace a ceramic substrate, miniaturization of the high-power SIP driving module can be achieved, on the basis that the heat dissipation effect is guaranteed, the cycle cost and the material cost are reduced, applicability is high, and the SIP driving module can normally work under various working conditions.

Description

Technical Field

[0001] This invention relates to the field of integrated circuit technology, and in particular to a miniaturized high-voltage, high-current SIP packaged three-phase bridge drive module. Background Technology

[0002] Currently, SiP advanced packaging technology is increasingly used in miniaturized designs, and the miniaturization of high-voltage, high-current power drive modules is also gradually increasing. These applications, due to their high requirements for heat dissipation, typically utilize ceramic substrates. As the application scope expands, these high-power SiP drive modules face higher demands in terms of cycle time and material costs. Therefore, it is of great significance to utilize other substrates with shorter cycle times and lower costs to achieve a low-cost, short-cycle high-power SiP drive module. Summary of the Invention

[0003] The purpose of this invention is to provide a miniaturized high-voltage, high-current SIP packaged three-phase bridge drive module, thereby achieving miniaturization of high-power SIP drive modules and reducing cycle costs and material costs while ensuring heat dissipation.

[0004] To achieve the above objectives, the technical solution adopted by this invention is: a miniaturized high-voltage, high-current SIP-packaged three-phase bridge drive module, comprising a SIP-packaged multilayer PCB substrate and a three-phase bridge power circuit, wherein:

[0005] The three-phase bridge power circuit is mounted on the top PCB substrate;

[0006] There is an intermediate filler layer between two adjacent PCB substrates;

[0007] Multiple metal vias are provided below each power transistor on the top PCB substrate, and the metal vias penetrate each PCB substrate layer and each intermediate filler layer.

[0008] All PCB substrates below the top PCB substrate have copper pours in their routing areas. The copper pours cover the areas where the metal vias are located, and the copper pours are connected to the metal vias.

[0009] Furthermore, the three-phase bridge drive module of the present invention also includes a power driver bare chip mounted on the top PCB substrate, the power driver bare chip being used to drive the power transistors in the three-phase bridge power circuit.

[0010] Furthermore, the PCB substrate is an FR4 substrate.

[0011] Furthermore, the power transistors in the three-phase bridge power circuit are IGBT transistors.

[0012] Furthermore, the PCB substrate has 2, 4, or 6 layers.

[0013] Furthermore, the SIP package is encapsulated in a metal casing.

[0014] The beneficial effects of this invention are:

[0015] The metal vias beneath the top-layer power transistors of this invention improve thermal conductivity, transferring heat to the underlying substrate. The lower substrate utilizes copper plating to enhance heat dissipation. Through extensive copper plating and numerous vias, low thermal resistance is achieved, ensuring timely heat dissipation of the power transistors, thus achieving the same heat dissipation effect as a ceramic substrate. Practical verification has shown that high thermal conductivity can be achieved on a 6-layer substrate.

[0016] By adopting advanced SIP packaging technology, miniaturization of the same function is achieved. A low-cost PCB substrate replaces the ceramic substrate, enabling 1200V, 100AIGBT three-phase bridge drive, reducing cycle and material costs. The three-phase bridge drive module provided by this invention has strong applicability and is suitable for power systems such as brushed motors and brushless motors. Whether in industrial control or military applications, this module can operate normally under various working conditions. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the three-phase bridge drive circuit structure according to an embodiment of the present invention;

[0018] Figure 2 This is a schematic diagram of the copper-plated heat dissipation structure according to an embodiment of the present invention;

[0019] Figure 3 This is a schematic diagram of the overall structure of a 6-layer PCB substrate according to an embodiment of the present invention;

[0020] Figure 4 This is a front view of the SIP packaged according to an embodiment of the present invention;

[0021] Figure 5 This is a top view of the SIP packaged according to an embodiment of the present invention;

[0022] Figure 6 This is a rear side view of the SIP package according to an embodiment of the present invention. Detailed Implementation

[0023] To better understand the above-mentioned objectives, features, and advantages of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0024] Figures 1-6 As shown, one specific embodiment of the present invention is a miniaturized high-voltage, high-current SIP-packaged three-phase bridge driver module, comprising a SIP-packaged 6-layer PCB substrate 1, a three-phase bridge power circuit, and a power driver bare chip, wherein:

[0025] like Figure 1As shown, the bare chip of the power driver is used to drive the power transistor 3 in the three-phase bridge power circuit;

[0026] The power driver bare chip and the three-phase bridge power circuit are both mounted on the top PCB substrate 1;

[0027] There is an intermediate filler layer 2 between two adjacent PCB substrates 1;

[0028] like Figure 2 As shown, multiple metal through holes 4 are provided below each power transistor 3 on the top PCB substrate 1, and the metal through holes 4 penetrate each PCB substrate 1 and each intermediate fill layer 2.

[0029] In addition to the top PCB substrate 1, each of the lower PCB substrates 1 (i.e. each intermediate trace layer and the bottom layer) has copper pour 5 in the trace area. The area of ​​copper pour 5 covers the area where the metal via 4 is located, and the copper pour 5 is connected to the metal via 4.

[0030] In this embodiment, the PCB substrate 1 is an FR4 substrate, the power transistor 3 is an IGBT transistor, the IGBT transistor model is CWB100U1200XXX, and the power driver bare chip model is HYX6601XXX.

[0031] like Figure 3 As shown, Figure 3 The six solid-line boxes indicate the positions of the power transistors 3, metal vias 4, and copper plating 5. The top PCB substrate has six 1200V, 100AIGBT power transistors 3. The dense metal vias 4 below each power transistor 3 achieve high thermal conductivity in the middle layer. The large copper plating 5 of each PCB substrate 1 below further improves the heat dissipation effect.

[0032] The SIP package is encapsulated in a metal casing.

[0033] Compared to traditional ceramic substrate three-phase bridge SIP drive modules, this embodiment saves over 500 yuan in cost and over 25 days in cycle time, and is suitable for brushed motor and brushless motor speed control systems. This embodiment operates at 1200V, with a maximum continuous current of 100A; the operating temperature range is -55℃ to 125℃.

[0034] like Figures 4-6 As shown in the table below, the product specifications of the three-phase bridge drive module in this embodiment are as follows:

[0035]

Claims

1. A miniaturized high-voltage, high-current SIP-packaged three-phase bridge drive module, characterized in that, Includes a multilayer PCB substrate (1) with SIP packaging and a three-phase bridge power circuit, wherein: The three-phase bridge power circuit is mounted on the top PCB substrate (1); An intermediate filler layer (2) is provided between two adjacent PCB substrates (1); Multiple metal through holes (4) are provided below each power transistor (3) on the top PCB substrate (1), and the metal through holes (4) penetrate each PCB substrate (1) and each intermediate fill layer (2); All PCB substrates (1) below the top PCB substrate (1) have copper pours (5) in the trace area. The area of ​​the copper pours (5) covers the area where the metal vias (4) are located, and the copper pours (5) are connected to the metal vias (4).

2. The miniaturized high-voltage, high-current SIP-packaged three-phase bridge drive module according to claim 1, characterized in that: It also includes a bare power driver chip mounted on the top PCB substrate (1), which is used to drive the power transistors (3) in the three-phase bridge power circuit.

3. The miniaturized high-voltage, high-current SIP-packaged three-phase bridge drive module according to claim 1, characterized in that: The PCB substrate (1) is an FR4 substrate.

4. The miniaturized high-voltage, high-current SIP-packaged three-phase bridge drive module according to claim 1, characterized in that: The power transistor (3) in the three-phase bridge power circuit is an IGBT transistor.

5. A miniaturized high-voltage, high-current SIP-packaged three-phase bridge drive module according to claim 1, characterized in that: The PCB substrate (1) has 2, 4, or 6 layers.

6. The miniaturized high-voltage, high-current SIP-packaged three-phase bridge drive module according to claim 1, characterized in that: The SIP package is encapsulated in a metal casing.

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