Chiral perovskite thin film, preparation method and circular polarization light emitting diode device
By introducing halogen-substituted chiral ligands at the perovskite interface, the problem of lattice distortion at the perovskite interface was solved, achieving efficient circularly polarized light emission and stable device performance, and improving the external quantum efficiency and circularly polarized light emission polarization of the device.
Patent Information
- Application Number
- CN202511403386.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-29
- Publication Date
- 2025-10-31
- Estimated Expiration
- 2045-09-29
AI Technical Summary
The large steric hindrance effect of cations in existing chiral organic ligands can induce lattice distortion at the perovskite interface, destroying structural symmetry and forming a large number of defects at the interface, affecting material stability and device efficiency.
Chiral compounds were formed by ion exchange reaction of phenylalanine hydrochloride and tetrafluoroborate solutions. A pseudohalogenated chiral ligand was introduced, and deep-level defects were passivated by coordinating the lone pair electrons on the carbonyl C=O group with Pb2+ ions at the perovskite interface. Spin-polarized charge carriers were then injected by spin-selectively into the chiral perovskite layer.
It improves device efficiency and circular polarization emission polarization, enhances material stability and device performance, and significantly improves external quantum efficiency and circular polarization emission efficiency.