Novel frequency doubling and mixing multifunctional device based on combined tube core

Abstract

The invention belongs to the field of terahertz communication, relates to a frequency doubling and frequency mixing technology, and particularly provides a novel frequency doubling and frequency mixing multifunctional device based on a combined tube core, which is used for realizing function integration of a frequency mixer and a frequency multiplier. The invention creatively provides a Schottky diode arrangement group consisting of two Schottky diode pairs with a large tube core and a small tube core, namely a combined tube core; a multifunctional device is jointly formed by the terahertz wave multiplier serving as a core device, a radio frequency end waveguide, a radio frequency end waveguide-microstrip probe, a local oscillator filter, a local oscillator end waveguide-microstrip probe, a local oscillator end waveguide, an intermediate frequency filter and an intermediate frequency end, a frequency doubling working mode and a frequency mixing working mode are included, and integration of frequency doubling and frequency mixing functions in a terahertz wave band is successfully achieved. And more possible combination schemes are provided for later terahertz system architecture.

Description

Technical Field

[0001] This invention belongs to the field of terahertz communication and relates to frequency doubling and mixing technology. Specifically, it provides a novel frequency doubling and mixing multifunctional device based on a combined die. Background Technology

[0002] Terahertz waves (frequency range 0.1–10 THz) possess characteristics such as wide spectrum, strong penetration, and high directionality, making them suitable for next-generation mobile communications, weather radar, security inspection, and terahertz radio telescopes. With the increasing scarcity of microwave spectrum resources, modern communication and radar technologies are gradually moving towards higher frequency bands, indicating a promising future for terahertz applications.

[0003] Frequency multipliers are one of the core components of terahertz systems, capable of multiplying microwave signals to the terahertz band. Given the current immaturity of terahertz amplifiers, frequency multiplication is the mainstream method for realizing terahertz signal sources. Mixers, located at the front end of a superheterodyne receiver, convert high-frequency signals into easily processed intermediate-frequency signals driven by a local oscillator signal. The main types of mixers include superconducting-insulated-superconducting mixers, thermionic radiation mixers, and Schottky diode mixers. Among these, Schottky diode mixers, with their advantages of room-temperature operation, compact structure, and reliable performance, have become the preferred choice for spaceborne millimeter-wave radiometers. Typically, frequency multiplication and mixing are designed independently, implemented in two separate cavities, which is not conducive to planar synthesis of multiple devices. With the continuous development of the terahertz band and the constant emergence of new system architectures, single-function frequency multipliers or mixers no longer meet the requirements of complex systems. Therefore, this invention proposes a multifunctional frequency multiplier and mixer device. Summary of the Invention

[0004] The purpose of this invention is to provide a novel frequency multiplier and mixer multifunctional device based on a combination of diodes, so as to realize the integration of mixer and frequency multiplier functions. This invention integrates Schottky diodes of two types of diodes and modifies the external bias voltage to make the diodes operate in frequency multiplication or frequency mixing mode, thereby realizing the switching between mixing and frequency multiplication functions in the same device.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] A novel frequency multiplier / mixer based on a combined die includes: an RF waveguide, an RF waveguide-microstrip probe, a Schottky diode array, a local oscillator filter, a local oscillator waveguide-microstrip probe, a local oscillator waveguide, an intermediate frequency (IF) filter, and an IF terminal. The RF waveguide-microstrip probe, Schottky diode array, local oscillator filter, local oscillator waveguide-microstrip probe, and IF filter are connected sequentially. The RF waveguide and local oscillator waveguide are respectively positioned to correspond to the RF waveguide-microstrip probe and local oscillator waveguide-microstrip probe, and the IF terminal is connected to the IF filter.

[0007] The Schottky diode array is characterized by comprising: a first Schottky diode pair and a second Schottky diode pair, the two Schottky diode pairs being arranged in parallel; in each Schottky diode pair, the two Schottky diodes are connected in parallel and symmetrically distributed on both sides of the transmission line; the first Schottky diode pair is disposed on the RF end waveguide-microstrip probe side, the second Schottky diode pair is disposed on the local oscillator filter side, and the die size of the second Schottky diode pair is larger than that of the first Schottky diode pair.

[0008] Furthermore, when the device is in frequency doubling mode, the local oscillator signal is input through the local oscillator waveguide, passes through the local oscillator filter, reaches the Schottky diode array and generates higher harmonic signals, which are output through the RF waveguide to achieve the frequency doubling function; during this process, the intermediate frequency terminal provides a reverse bias voltage to the Schottky diode array.

[0009] Furthermore, when the device is in the mixing mode, the radio frequency (RF) signal is input to the Schottky diode array through the RF waveguide, and the local oscillator (LO) signal is input through the LO waveguide, passes through the LO filter, and reaches the Schottky diode array. The RF signal and the LO signal are mixed to generate an intermediate frequency (IF) signal, which is then output from the IF terminal after passing through the LO filter and the IF filter. During this process, an external bias voltage is provided to the Schottky diode array.

[0010] Furthermore, the RF waveguide adopts the WR-2.8 standard rectangular waveguide, and the local oscillator waveguide adopts the WR-5.1 standard rectangular waveguide; the final stage of the rectangular waveguide is a short-circuit path; the RF waveguide-microstrip probe and the local oscillator waveguide-microstrip probe realize the mutual conversion between the TE10 mode of the waveguide and the TEM mode of the microstrip line.

[0011] Furthermore, both the local oscillator filter and the intermediate frequency filter adopt the CMRC structure.

[0012] Furthermore, in the first Schottky diode pair, the Schottky diode is a gallium arsenide diode with a die size of 1µm; in the second Schottky diode pair, the Schottky diode is also a gallium arsenide diode with a die size of 4µm.

[0013] Based on the above technical solution, the beneficial effects of the present invention are as follows:

[0014] This invention provides a novel frequency multiplier and mixer multifunctional device based on a combined die. It creatively proposes a Schottky diode array consisting of two Schottky diode pairs with different die sizes, which is the combined die. This combined die is used as the core device and together with the RF waveguide, RF waveguide-microstrip probe, local oscillator filter, local oscillator waveguide-microstrip probe, local oscillator waveguide, intermediate frequency filter, and intermediate frequency terminal, it constitutes a multifunctional device including frequency multiplier and mixer modes. It successfully realizes the integration of frequency multiplier and mixer functions in the terahertz band, and provides more possible combination schemes for future terahertz system architectures. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of the structure of the novel frequency doubling and mixing multifunctional device of the present invention.

[0016] Figure 2 The figure shows the simulation test results of the frequency doubling efficiency and mixing efficiency of the novel frequency doubling and mixing multifunctional device in this invention. Detailed Implementation

[0017] To make the objectives, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0018] This embodiment provides a novel frequency multiplier / mixer multifunctional device based on a combined die, such as... Figure 1 As shown, it includes: an RF waveguide, an RF waveguide-microstrip probe, a Schottky diode array, a local oscillator filter, a local oscillator waveguide-microstrip probe, a local oscillator waveguide, an intermediate frequency (IF) filter, and an IF terminal; the RF waveguide-microstrip probe, the Schottky diode array, the local oscillator filter, the local oscillator waveguide-microstrip probe, and the IF filter are connected sequentially, with the RF waveguide and local oscillator waveguide corresponding to the RF waveguide-microstrip probe and the local oscillator waveguide-microstrip probe, respectively, and the IF terminal connected to the IF filter; more importantly:

[0019] The Schottky diode array includes a first Schottky diode pair and a second Schottky diode pair, with the two Schottky diode pairs arranged in parallel. In each Schottky diode pair, the two Schottky diodes are connected in parallel and symmetrically distributed on both sides of the transmission line. The first Schottky diode pair is located on the RF end waveguide-microstrip probe side, and the second Schottky diode pair is located on the local oscillator filter side. The die size of the second Schottky diode pair is larger than that of the first Schottky diode pair.

[0020] The aforementioned novel frequency multiplier and mixer multifunctional device based on combined chips has two operating modes: frequency multiplication and frequency mixing.

[0021] When the device is in frequency doubling mode, the local oscillator signal is input through the local oscillator waveguide, passes through the local oscillator filter, reaches the Schottky diode array and generates higher harmonic signals. The higher harmonic signals are output through the RF waveguide to realize the frequency doubling function. During this process, the intermediate frequency terminal provides a reverse bias voltage to keep the Schottky diodes in the optimal operating state.

[0022] When the device is in the mixing mode, the radio frequency (RF) signal is input to the Schottky diode array through the RF waveguide, and the local oscillator (LO) signal is input through the LO waveguide, passes through the LO filter, and reaches the Schottky diode array. The RF signal and the LO signal are mixed to generate the intermediate frequency (IF) signal. The IF signal passes through the LO filter and the IF filter and is output from the IF terminal. At the same time, an external bias voltage can be provided to the Schottky diodes to keep them in the optimal operating state.

[0023] Furthermore, the RF waveguide adopts a WR-2.8 standard rectangular waveguide, and the local oscillator waveguide adopts a WR-5.1 standard rectangular waveguide. The final stage of the rectangular waveguide is a short-circuit path. The electromagnetic wave mode of the standard rectangular waveguide is the TE10 mode. The mutual conversion between the TE10 mode of the waveguide and the TEM mode of the microstrip line is realized through the RF waveguide-microstrip probe.

[0024] Furthermore, both the local oscillator filter and the intermediate frequency filter adopt a CMRC structure to filter out high-frequency signals and prevent signal leakage and crosstalk.

[0025] Furthermore, in the first Schottky diode pair, the Schottky diode is a gallium arsenide diode with a die size (anode column diameter) of 1µm; in the second Schottky diode pair, the Schottky diode is also a gallium arsenide diode with a die size (anode column diameter) of 4µm. It should also be noted that when the device is in frequency multiplication mode, the second Schottky diode pair plays a dominant role, requiring a relatively large diode size to facilitate better power handling during frequency multiplication; while in frequency mixing mode, the first Schottky diode pair plays a dominant role, requiring a smaller diode size to minimize conversion losses during mixing. Therefore, this invention proposes a Schottky diode arrangement based on the first and second Schottky diode pairs, ensuring that the die size of the second Schottky diode pair is larger than that of the first Schottky diode pair, thus achieving a multi-functional design for both the mixer and frequency multiplier through the Schottky diode arrangement.

[0026] The frequency doubling efficiency and mixing efficiency of the novel frequency doubling and mixing multifunctional device in this embodiment were simulated and tested, and the results are as follows: Figure 2As shown in the figure, the present invention can achieve a frequency doubling loss of -15dB and a frequency mixing loss of -15dB in the 300GHz to 360GHz frequency band. This proves that by designing the Schottky diode array, the present invention can achieve the integration of frequency doubling and mixing functions in the terahertz band, providing more possible combination schemes for subsequent terahertz system architectures.

[0027] The above description is merely a specific embodiment of the present invention. Any feature disclosed in this specification may be replaced by other equivalent or similar features unless otherwise specified. All disclosed features, or steps in all methods or processes, may be combined in any way except for mutually exclusive features and / or steps.

Claims

1. A novel frequency multiplier / mixer multifunctional device based on a composite die, comprising: The system includes an RF waveguide, an RF waveguide-microstrip probe, a Schottky diode array, a local oscillator filter, a local oscillator waveguide-microstrip probe, a local oscillator waveguide, an intermediate frequency (IF) filter, and an IF terminal. The RF waveguide-microstrip probe, Schottky diode array, local oscillator filter, local oscillator waveguide-microstrip probe, and IF filter are connected sequentially. The RF waveguide and local oscillator waveguide are respectively set to correspond to the RF waveguide-microstrip probe and local oscillator waveguide-microstrip probe, and the IF terminal is connected to the IF filter. The Schottky diode array is characterized by comprising: a first Schottky diode pair and a second Schottky diode pair, the two Schottky diode pairs being arranged in parallel; in each Schottky diode pair, the two Schottky diodes are connected in parallel and symmetrically distributed on both sides of the transmission line; the first Schottky diode pair is disposed on the RF end waveguide-microstrip probe side, the second Schottky diode pair is disposed on the local oscillator filter side, and the die size of the second Schottky diode pair is larger than that of the first Schottky diode pair.

2. The novel frequency multiplier / mixer multifunctional device based on a combined die according to claim 1, characterized in that, When the device is in frequency doubling mode, the local oscillator signal is input through the local oscillator waveguide, passes through the local oscillator filter, reaches the Schottky diode array and generates higher harmonic signals. The higher harmonic signals are output through the RF waveguide to realize the frequency doubling function. During this process, the intermediate frequency terminal provides a reverse bias voltage to the Schottky diode array.

3. The novel frequency multiplier / mixer multifunctional device based on a combined die according to claim 1, characterized in that, When the device is in the mixing mode, the radio frequency (RF) signal is input to the Schottky diode array through the RF waveguide, and the local oscillator (LO) signal is input through the LO waveguide, passes through the LO filter, and reaches the Schottky diode array. The RF signal and the LO signal are mixed to generate an intermediate frequency (IF) signal. The IF signal passes through the LO filter and the IF filter and is output from the IF terminal. During this process, an external bias voltage is provided to the Schottky diode array through an external bias device.

4. The novel frequency multiplier / mixer multifunctional device based on a combined die according to claim 1, characterized in that, The RF waveguide adopts the WR-2.8 standard rectangular waveguide, and the local oscillator waveguide adopts the WR-5.1 standard rectangular waveguide; the final stage of the rectangular waveguide is the waveguide short-circuit surface; the RF waveguide-microstrip probe and the local oscillator waveguide-microstrip probe realize the mutual conversion between the TE10 mode of the waveguide and the TEM mode of the microstrip line.

5. The novel frequency multiplier / mixer multifunctional device based on a combined die according to claim 1, characterized in that, Both the local oscillator filter and the intermediate frequency filter adopt the CMRC structure.

6. The novel frequency multiplier / mixer multifunctional device based on a combined die according to claim 1, characterized in that, The first Schottky diode is a gallium arsenide diode with a die size of 1µm. The second Schottky diode pair also uses gallium arsenide diodes with a die size of 4µm.

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