Method for preparing high-quality quasi-two-dimensional perovskite thin film on gallium nitride substrate
By employing spin-coating technology and inorganic salts to regulate growth kinetics on gallium nitride substrates, the film quality problem caused by spontaneous micelle formation in the precursor solution was solved, and high-quality quasi-two-dimensional perovskite films suitable for commercial use were prepared.
Patent Information
- Application Number
- CN202511015620.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-07-23
- Publication Date
- 2025-10-31
AI Technical Summary
In the preparation of quasi-two-dimensional perovskite thin films, the spontaneous formation of micelles in the precursor solution leads to the random distribution of different values in the film, resulting in poor film quality.
Perovskite films were prepared on gallium nitride substrates using a spin-coating process. By optimizing the ratio of the precursor solution and introducing inorganic salts (such as metal bromide salts) to regulate the growth kinetics, high-quality films with uniform phase distribution were obtained.
High-quality quasi-two-dimensional perovskite thin films with good environmental and thermal stability were successfully prepared, making them suitable for commercial use.
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Figure CN120882277A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor technology, and more specifically to a method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates. Background Technology
[0002] Gallium nitride (GaN) semiconductors have important applications in high-power electronics, radio frequency devices, and optoelectronics. In recent years, there has been increasing interest in integrating GaN semiconductors with other semiconductor thin films, combining the unique functions of GaN with semiconductor thin films to develop next-generation multifunctional integrated optoelectronic devices. Lead halide perovskites have attracted considerable attention due to their advantages such as high exciton binding energy, tunable band gap, and high absorption coefficient. However, their poor stability to water and oxygen has limited their commercial development. With scientific advancements, large organic cations have been introduced into the perovskite structure to form quasi-two-dimensional perovskites, effectively blocking the degradation of perovskites by water and oxygen. Furthermore, the introduction of large organic cations increases the formation energy of the material, improving the performance of the perovskite and related devices. However, during the preparation of quasi-two-dimensional perovskite thin films, the precursor solution spontaneously forms micelles, causing a random distribution of different values in the film, resulting in poor film quality. Summary of the Invention
[0003] This invention addresses the problem in existing technologies where the spontaneous formation of micelles in the precursor solution during the fabrication of quasi-two-dimensional perovskite thin films leads to random distribution of different values within the film, resulting in poor film quality. The invention provides a method for fabricating high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates. This invention employs a spin-coating process to grow high-quality quasi-two-dimensional perovskite thin films. By optimizing the precursor solution ratio and introducing inorganic salts (metal bromide salts) to regulate growth kinetics, high-quality films with uniform phase distribution are obtained.
[0004] To solve the above-mentioned technical problems, the technical solution of the present invention is as follows:
[0005] A method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates includes the following steps:
[0006] Step 1: Clean the gallium nitride substrate and perform a Plasma treatment;
[0007] Step 2: Spin-coat the perovskite precursor solution onto the gallium nitride substrate treated in Step 1;
[0008] The solutes in the perovskite precursor solution are butylamine bromide powder, lead bromide powder, and cesium bromide powder, and the solvent is a mixed solution of DMF and DMSO; and a metal bromide salt is added to the perovskite precursor solution.
[0009] Step 3: After performing thermal annealing on the perovskite film produced in Step 2, a high-quality quasi-two-dimensional perovskite film with uniform phase distribution can be obtained.
[0010] In the above technical solution, preferably, step one includes the following steps:
[0011] (1) Use an ultrasonic cleaner to ultrasonically clean deionized water, ethanol, acetone and isopropanol containing detergent for 10 minutes each, then soak in ethanol solution for later use.
[0012] (2) The gallium nitride substrate was purged with a nitrogen gun and treated with Plasma technology for 3 minutes.
[0013] In the above technical solution, preferably, in step two, the solutes of butylamine bromide powder, lead bromide powder, cesium bromide powder, and bromide metal salt in the perovskite precursor solution are all powdered pharmaceuticals with a purity greater than 99.9%; the volume ratio of DMF to DMSO in the solvent is 1:3; and the concentration of Pb in the perovskite precursor solution is 0.4M.
[0014] In the above technical solution, preferably, in step two, the brominated metal salt is manganese bromide or nickel bromide.
[0015] In the above technical solution, it is preferred that, in step two, the spin coating speed is set between 1000 rpm and 4000 rpm.
[0016] In the above technical solution, it is further preferred that, in step two, the perovskite precursor solution is first spin-coated at a speed of 1000 rpm for 10 seconds, and then the speed is increased to 3000 rpm for 50 seconds.
[0017] In the above technical solution, preferably, in step three, the annealing temperature is 120°C and the annealing time is 10 minutes.
[0018] The beneficial effects of this invention are:
[0019] The present invention provides a method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates. The method employs a spin-coating process to grow high-quality quasi-two-dimensional perovskite thin films. By optimizing the ratio of the precursor solution and introducing inorganic salts (metal bromide salts) to regulate the growth kinetics, high-quality films with uniform phase distribution are obtained.
[0020] The present invention provides a method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates. By introducing a metal bromide salt into the precursor solution to regulate the growth kinetics of the perovskite thin film, the method employs simple and easy-to-implement techniques with good repeatability, which is conducive to batch preparation. The resulting quasi-two-dimensional perovskite thin films have fewer pinholes, lower roughness, higher fluorescence quantum yield, and better environmental and thermal stability, and have great commercial potential. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1 This is a flowchart of the method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates according to the present invention.
[0023] Figure 2 The XRD diffraction pattern of BA2CsPb2Br7:0.06MnBr2 grown on gallium nitride prepared in an embodiment of the present invention.
[0024] Figure 3 Photoluminescence spectrum of BA2CsPb2Br7:0.06MnBr2 grown on gallium nitride, prepared according to an embodiment of the present invention.
[0025] Figure 4 The UV-Vis absorption spectrum of BA2CsPb2Br7:0.06MnBr2 grown on gallium nitride prepared in an embodiment of the present invention.
[0026] Figure 5 The XRD diffraction pattern of BA2CsPb2Br7:0.03NiBr2 prepared in Example 2.
[0027] Figure 6 The photoluminescence spectrum of BA2CsPb2Br7:0.03NiBr2 prepared in Example 2 is shown.
[0028] Figure 7 The UV-Vis absorption spectrum of BA2CsPb2Br7:0.03NiBr2 prepared in Example 2 is shown. Detailed Implementation
[0029] This invention provides a method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates, such as... Figure 1 As shown, the method of the present invention includes the following steps:
[0030] Step 1: Thoroughly clean the gallium nitride substrate and perform a plasma treatment; the specific steps are as follows:
[0031] (1) Use an ultrasonic cleaner to ultrasonically clean deionized water, ethanol, acetone and isopropanol containing detergent for 10 minutes each, then soak in ethanol solution for later use.
[0032] (2) The gallium nitride substrate was purged with a nitrogen gun and treated with Plasma technology for 3 minutes.
[0033] Step 2: On the gallium nitride substrate treated in Step 1, a perovskite precursor solution is spin-coated using a spin coater.
[0034] The solvent for the perovskite precursor solution is a mixed solution of DMF and DMSO, wherein the volume ratio of DMF to DMSO is 1:3; the concentration of Pb in the precursor is 0.4M.
[0035] The solutes in the perovskite precursor solution are butylamine bromide powder, lead bromide powder, cesium bromide powder, and metal bromide salts, all of which are powdered pharmaceuticals with a purity greater than 99.9%.
[0036] The brominated metal salt is manganese bromide or nickel bromide, etc.
[0037] The spin coater speed is set between 1000 rpm and 4000 rpm; furthermore, the perovskite precursor solution is first spin-coated at 1000 rpm for 10 seconds, and then the speed is increased to 3000 rpm for 50 seconds.
[0038] Step 3: Perform thermal annealing on the perovskite film produced in Step 2 to obtain a high-quality quasi-two-dimensional perovskite film with uniform phase distribution; the annealing temperature of the perovskite film is 120℃ and the annealing time is 10 minutes.
[0039] The present invention will be further described below with reference to embodiments.
[0040] Example 1
[0041] The method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates provided in this invention involves spin-coating a perovskite precursor solution onto a treated gallium nitride substrate, followed by thermal annealing to obtain a high-quality quasi-two-dimensional perovskite thin film. The chemical formula of the quasi-two-dimensional perovskite material is BA2CsPb2Br7.
[0042] Specifically, the following steps are included:
[0043] (1) Weigh out the drug according to the chemical ratio of BA2CsPb2Br7:0.06MnBr2 (BA represents n-butylamine, MnBr2 is 0.06 moles), and dissolve it in a mixed solvent of DMF and DMSO (total volume 1 mL), wherein the volume ratio of DMF to DMSO is 1:3, and stir continuously for 24 hours.
[0044] The weighed pharmaceuticals, including butanyl bromide powder, lead bromide powder, cesium bromide powder, and manganese bromide, are all powdered pharmaceuticals with a purity greater than 99.9%.
[0045] (2) The gallium nitride substrate was ultrasonically cleaned for 10 minutes each in deionized water, ethanol, acetone and isopropanol containing detergent in an ultrasonic cleaner, and then soaked in ethanol solution for later use; the gallium nitride substrate was then purged with a nitrogen gun and treated with Plasma technology for 3 minutes.
[0046] (3) Place the gallium nitride substrate on a spin coater, drop 80 microliters of precursor solution, spin coat at 1000 rpm for 10 seconds, then increase the speed to 3000 rpm and spin coat for 50 seconds.
[0047] (4) Transfer the gallium nitride substrate coated with perovskite film to a hot plate and anneal at 120°C for 10 minutes.
[0048] See Figure 2 The image shows the XRD diffraction pattern of the perovskite thin film prepared in this embodiment. A high-quality quasi-two-dimensional perovskite thin film was obtained by spin-coating perovskite material onto a gallium nitride substrate, where only the (100) crystal plane of the perovskite film is visible. The photoluminescence spectrum of the perovskite thin film prepared in this embodiment is as follows: Figure 3 As shown, only one intrinsic peak of perovskite is present, indicating uniform phase distribution, high crystal quality, and the presence of red light emission from manganese ions. The UV-Vis absorption spectrum of the perovskite film prepared in this embodiment is shown below. Figure 4 As shown, the absorption peaks of individual perovskites are visible, which also proves that the phase distribution of the perovskite film is uniform and of high quality.
[0049] Example 2
[0050] (1) Weigh the drug according to the chemical ratio of BA2CsPb2Br7:0.03NiBr2 (BA represents n-butylamine, and NiBr2 is 0.03 moles), and dissolve it in a mixed solvent of DMF and DMSO (DMSO:DMF = 3:1, total volume 1 mL), and stir continuously for 24 hours.
[0051] The weighed pharmaceuticals, including butanyl bromide powder, lead bromide powder, cesium bromide powder, and nickel bromide, are all powdered pharmaceuticals with a purity greater than 99.9%.
[0052] (2) The gallium nitride substrate was ultrasonically cleaned for 10 minutes each in deionized water, ethanol, acetone and isopropanol containing detergent in an ultrasonic cleaner, and then soaked in ethanol solution for later use; the gallium nitride substrate was then purged with a nitrogen gun and treated with Plasma technology for 3 minutes.
[0053] (3) Place the gallium nitride substrate on a spin coater, drop 80 microliters of precursor solution, spin coat at 1000 rpm for 10 seconds, then increase the speed to 3000 rpm and spin coat for 50 seconds.
[0054] (4) Transfer the gallium nitride substrate coated with perovskite film to a hot plate and anneal at 120°C for 10 minutes.
[0055] See Figure 5 The image shows the XRD diffraction pattern of the perovskite thin film prepared in this embodiment. Perovskite material was grown on a gallium nitride substrate using a spin-coating process, resulting in a high-quality quasi-two-dimensional perovskite thin film where only the quasi-two-dimensional phase crystal planes appear. The photoluminescence spectrum of the perovskite thin film prepared in this embodiment is shown below. Figure 6 As shown, the intrinsic peak of the n=2 perovskite is dominant, indicating a uniform phase distribution and high crystal quality. The UV-Vis absorption spectrum of the perovskite film prepared in this embodiment is shown below. Figure 7 As shown, the presence of absorption peaks only in the low-dimensional phase further demonstrates the uniform phase distribution and high quality of the perovskite film.
[0056] The above description is only a partial embodiment of this application. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of this application, and these improvements and modifications should also be considered within the scope of protection of this application.
Claims
1. A method for preparing high-quality quasi-two-dimensional perovskite thin films on gallium nitride substrates, characterized in that, Includes the following steps: Step 1: Clean the gallium nitride substrate and perform a Plasma treatment; Step 2: Spin-coat the perovskite precursor solution onto the gallium nitride substrate treated in Step 1; The solutes in the perovskite precursor solution are butylamine bromide powder, lead bromide powder, and cesium bromide powder, and the solvent is a mixed solution of DMF and DMSO; and a metal bromide salt is added to the perovskite precursor solution. Step 3: After performing thermal annealing on the perovskite film produced in Step 2, a high-quality quasi-two-dimensional perovskite film with uniform phase distribution can be obtained.
2. The method according to claim 1, characterized in that, Step one includes the following steps: (1) Use an ultrasonic cleaner to ultrasonically clean deionized water, ethanol, acetone and isopropanol containing detergent for 10 minutes each, then soak in ethanol solution for later use. (2) The gallium nitride substrate was purged with a nitrogen gun and treated with Plasma technology for 3 minutes.
3. The method according to claim 1, characterized in that, In step two, the solutes of the perovskite precursor solution, including butylamine bromide powder, lead bromide powder, cesium bromide powder, and bromide metal salt, are all powdered pharmaceuticals with a purity greater than 99.9%; the volume ratio of DMF to DMSO in the solvent is 1:3; and the concentration of Pb in the perovskite precursor solution is 0.4M.
4. The method according to claim 1, characterized in that, In step two, the brominated metal salt is manganese bromide or nickel bromide.
5. The method according to claim 1, characterized in that, In step two, the spin coating speed is set between 1000 rpm and 4000 rpm.
6. The method according to any one of claims 1-5, characterized in that, In step two, the perovskite precursor solution is first spin-coated at 1000 rpm for 10 seconds, and then the speed is increased to 3000 rpm for 50 seconds.
7. The method according to claim 6, characterized in that, In step three, the annealing temperature is 120℃ and the annealing time is 10 minutes.
Citation Information
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