Perovskite solar cell based on buried interface modification and preparation method and application thereof

Abstract

The invention discloses a perovskite solar cell based on buried interface modification and a preparation method and application thereof. The invention relates to an application of 2-(acrylamide) benzoic acid and / or 2-(4-pentenoylamido) benzoic acid in a trans-perovskite solar cell buried interface modifier. According to the invention, 2-(acrylamide) benzoic acid and / or 2-(4-pentenylamido) benzoic acid are / is used as a buried interface modifier, such molecules take benzoic acid as an anchoring group, and through the synergistic effect among carboxyl, amido and carbon-carbon double bonds, the defects at the thin film grain boundary of the hole transport layer and the perovskite layer are reduced; according to the invention, the NiOX thin film is introduced into the small molecules, and the alkyl chain is further introduced into the small molecules and can effectively fill small recesses and holes in the NiOX thin film, so that the flatness of the NiOX thin film is improved, a compact and compact modification layer is formed, the morphology of the perovskite layer thin film is further regulated and controlled, and the photoelectric conversion efficiency of the perovskite solar cell is improved.

Description

Technical Field

[0001] This invention belongs to the field of photovoltaic solar energy materials technology, specifically relating to a perovskite solar cell based on buried interface modification, its preparation method, and its application. Background Technology

[0002] Perovskite solar cells (PSCs), representing the next generation of photovoltaic technology, have achieved a photoelectric conversion efficiency (PCE) exceeding 26%. However, their commercialization remains limited by key challenges such as poor stability, severe non-radiative recombination at the interface, and poor reproducibility of the fabrication process. This is particularly true for nickel oxide (NiO). X In an inverted structure battery with a hole transport layer, the buried interface (i.e., NiO) X The defect-induced degradation problem at the perovskite interface is particularly prominent, severely restricting the long-term stability and further efficiency improvement of the battery. Nickel oxide, with its highly active nickel sites, readily reacts adversely with perovskite, and the presence of numerous oxygen vacancies at the interface exacerbates carrier recombination, leading to a decrease in open-circuit voltage (V). OC The fill factor (FF) and fill factor (FF) decreased significantly.

[0003] Currently regarding NiO X Perovskite interface engineering strategies mainly include single-molecule passivation and composite modification layers, but they still have the following drawbacks: First, although traditional self-assembled monolayer (SAM) materials (such as Me-4PACz and MeO-2PACz) can optimize energy level arrangement, their molecular defect passivation sites are insufficient, leading to problems such as poor compactness of the passivation layer, which cannot optimize perovskite grain growth and further limits the improvement of device performance. Second, interface engineering can be used to improve the adverse reactions between perovskite and highly reactive nickel oxide and NiO. X Carrier recombination at the perovskite interface. The photoelectric efficiency obtained through interface engineering is improved compared to direct modification methods, with the photoelectric efficiency of organic molecule surface modification mostly between 17% and 20%.

[0004] Therefore, a method for developing NiO acting on the hole transport layer is required. X Novel modifiers between perovskite layers are crucial for improving the photoelectric conversion efficiency and stability of perovskite solar cells. Summary of the Invention

[0005] To address the problems existing in the prior art, the primary objective of this invention is to provide the application of 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid in the interface modifier of trans-perovskite solar cells.

[0006] Another object of the present invention is to provide a method for improving the photoelectric performance of inverted perovskite solar cells.

[0007] Another object of the present invention is to provide an inverted perovskite solar cell.

[0008] Another object of the present invention is to provide a method for preparing the above-mentioned inverted perovskite solar cell.

[0009] Another object of the present invention is to provide the application of the above-mentioned inverted perovskite solar cells in the preparation of photovoltaic power generation equipment.

[0010] To achieve the above objectives, the present invention provides the following technical solution: Application of 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid as a substrate interface modifier for trans-perovskite solar cells.

[0011] This invention uses 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid as a buried interface modifier. These small molecule compounds can form a dense and compact modification layer, which can effectively reduce the direct contact between the perovskite layer and the highly reactive nickel oxide in the hole transport layer. Therefore, it can reduce the adverse reactions between the perovskite layer and trivalent and tetravalent nickel oxide and suppress the hole transport layer NiO. X The recombination of charge carriers at the perovskite layer interface passivates defects at the interface between the perovskite layer and the hole transport layer, thereby improving the photoelectric performance of perovskite solar cells.

[0012] These small molecule compounds can bind to NiO in the hole transport layer via the carboxyl group on benzoic acid. X Surface hydroxyl groups coordinate and anchor, passivating the hole transport layer while firmly anchoring small molecules to it, optimizing energy level arrangement; C=O on the amide group can coordinate with metal ions in the perovskite layer, and NH can form hydrogen bonds with halogen atoms in the perovskite layer, reducing the formation of non-perovskite phases such as lead iodide; carbon-carbon double bonds on small molecules can achieve intermolecular crosslinking, blocking ion migration; these three factors work synergistically to improve the photoelectric performance of perovskite solar cells.

[0013] Furthermore, alkyl chains are introduced onto the small molecule compound, and these alkyl chains can effectively fill NiO. X Smaller depressions and pores on the film surface, covering smaller surface protrusions and particles, allow NiO to... X The thin film is more uniform and smooth, providing a more ideal substrate for subsequent perovskite deposition, promoting uniform nucleation and growth of perovskite, forming perovskite thin films with larger grains and fewer grain boundaries, thereby improving the photoelectric performance of perovskite solar cells.

[0014] The preparation methods of 2-(acrylamido)benzoic acid and 2-(4-pentenamido)benzoic acid of the present invention are referenced in the literature (Changshu Wu, Yang Gao, et al. Ag-Catalyzed Practical Synthesis of N-AcylAnthranilic Acids from Anthranils and Carboxylic Acids. The Journal of Organic Chemistry, 2024, 89, 3150-3160. DOI:doi.org / 10.1021 / acs.joc.3c02586).

[0015] A method for improving the photoelectric performance of an inverted perovskite solar cell involves spin-coating a solution containing a small molecule compound between a hole transport layer and a perovskite layer; the small molecule compound is 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid.

[0016] Preferably, the concentration of the small molecule compound in the solution is 0.8~1.2 mg / mL.

[0017] Preferably, the solution containing the small molecule compound also includes Me-2PACz.

[0018] Me-2PACz belongs to the SAM molecule and is a P-type semiconductor with advantages such as high hole selectivity, high hole transport rate and low interface trap state density. It modifies and improves the energy level arrangement, making it more hydrophobic. By modifying the buried interface, it further induces a perovskite layer with larger grains and higher crystallinity.

[0019] In this invention, 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid are mixed with Me-2PACz to serve as a buried interface modifier. The two can work synergistically to improve the photoelectric performance of perovskite solar cells.

[0020] More preferably, the concentration of the small molecule compound in the solution is 0.1~0.3 mg / mL.

[0021] Controlling the concentration of 2-(acrylamido)benzoic acid or 2-(4-pentenamido)benzoic acid within the range of 0.10~0.30 mg / mL can further improve the photoelectric performance of perovskite solar cells.

[0022] More preferably, the concentration of Me-2PACz in the solution is 0.3~0.5 mg / mL.

[0023] Specifically, the solvent used in the solution containing the small molecule compound is an alcohol solvent.

[0024] More specifically, the alcohol solvent is at least one of methanol, ethanol, or isopropanol.

[0025] An inverted perovskite solar cell comprises, from bottom to top, a conductive glass layer, a hole transport layer, a buried interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer. The buried interface modification layer comprises 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid.

[0026] Preferably, the buried interface modification layer further includes Me-2PACz.

[0027] Specifically, the hole transport layer is NiOx.

[0028] Specifically, the interface modification layer is formed by first spin-coating the perovskite solar cell buried interface modifier onto the hole transport layer and then removing the solvent.

[0029] Specifically, the material of the conductive glass layer is one or both of ITO conductive glass and FTO conductive glass.

[0030] Specifically, the materials of the perovskite layer are formamidinium hydrohalate, alkyl ammonium halide, cesium halide, and lead halide.

[0031] More specifically, the formamidine halide is one or more of formamidine hydrochloride, formamidine bromate, and formamidine hydroiodide.

[0032] More specifically, the alkyl ammonium halide is at least one of methyl ammonium iodide, methyl ammonium chloride, methyl triethyl ammonium iodide, dimethyl diethyl ammonium iodide, nonyl ammonium iodide, or dodecyl dimethyl ethyl ammonium iodide.

[0033] More specifically, the cesium halide is at least one of cesium iodide, cesium chloride, or cesium bromide.

[0034] More specifically, the lead halide is at least one of lead iodide, lead chloride, or lead bromide.

[0035] Specifically, the material of the electron transport layer is a carbon-60 derivative.

[0036] More specifically, the C60 derivative is [6,6]-phenyl C 61 Methyl butyrate, [6,6]-thienyl C 61 Methyl butyrate, [6,6]-phenyl-C 61 -Octyl butyrate or [6,6]-phenyl-C 61 At least one of -dodecyl butyrate.

[0037] C60 derivatives inherit the conjugated cage-like carbon molecular structure of fullerenes, giving them excellent electron storage capacity and high electron mobility.

[0038] Specifically, the material of the metal electrode layer is at least one of silver, gold, or copper.

[0039] The above-mentioned method for preparing an inverted perovskite solar cell involves spin-coating a hole transport layer, a buried interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer sequentially onto a conductive glass layer. The method for preparing the buried interface modification layer includes spin-coating a solution containing a small molecule compound onto the hole transport layer and heating it to obtain the buried interface modification layer. The small molecule compound is 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid.

[0040] Preferably, the amount of solution containing the small molecule compound added is 40~60 μL.

[0041] Preferably, the spin coating speed is 3000~4000 rpm.

[0042] Preferably, the spin coating time is 30-40 seconds.

[0043] Preferably, the heating temperature is 100~120℃.

[0044] Preferably, the heating time is 5 to 10 minutes.

[0045] Specifically, the method for preparing the hole transport layer is as follows: the conductive glass is ultrasonically cleaned alternately with detergent, deionized water, acetone and isopropanol, dried with argon gas, then treated with ultraviolet ozone, and a hole transport layer solution prepared by the hole transport layer material is spin-coated on the surface of the conductive glass to obtain the hole transport layer.

[0046] Specifically, the perovskite layer is prepared by spin-coating a perovskite precursor solution, which is formulated from the materials of the perovskite layer, onto the surface of the buried interface modification layer to obtain the perovskite layer.

[0047] More specifically, the solvent of the perovskite solution is at least one of DMF, DMSO, THF, acetone, isopropanol, toluene, or chlorobenzene.

[0048] Specifically, the method for preparing the electron transport layer is as follows: the material of the electron transport layer is prepared into an electron transport layer solution and spin-coated onto the surface of the perovskite modified layer, and then copper bath (BCP) is spin-coated to obtain the electron transport layer.

[0049] The function of copper bath is to block hole transport, which can improve the performance of solar cell devices.

[0050] Specifically, the method for preparing the metal electrode layer is as follows: the electron transport layer is placed in a vacuum coating machine and vapor-deposited to obtain the metal electrode layer.

[0051] This invention also protects the application of the above-mentioned inverted perovskite solar cells in the preparation of photovoltaic power generation equipment.

[0052] Compared with the prior art, the present invention has the following beneficial effects: This invention uses 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid as buried interface modifiers. These molecules use benzoic acid as an anchoring group, and through the synergistic effect between carboxyl groups, amide groups, and carbon-carbon double bonds, they reduce defects at the grain boundaries between the hole transport layer and the perovskite layer film, thereby improving the NiO layer. X The smoothness of the thin film allows for the formation of a dense and compact modification layer, thereby controlling the morphology of the perovskite layer and improving the photoelectric conversion efficiency of the perovskite solar cell. Furthermore, the introduction of alkyl chains into small molecules effectively fills NiO. X Smaller depressions and pores on the thin film cover smaller surface bumps and particles, making NiO X The thin film is more uniform and smooth, providing a more ideal substrate for subsequent perovskite deposition, thereby improving the optoelectronic performance of the device.

[0053] This invention uses 2-(acrylamido)benzoic acid or 2-(4-pentenamido)benzoic acid and Me-2PACz together as buried interface modifiers. The two work synergistically to further improve the photoelectric conversion efficiency of perovskite solar cells. Attached Figure Description

[0054] Figure 1 NiO modified for Examples 3, 4 and Comparative Example 2 X AFM test of the substrate.

[0055] Figure 2 The steady-state photoluminescence (PL) spectra of the perovskite layers in Examples 3, 4, and Comparative Example 2 are shown.

[0056] Figure 3 The JV curves are for the calcium-titanium oxide solar cells of the examples and comparative examples. Detailed Implementation

[0057] The present invention is further illustrated below with reference to specific embodiments. These embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Experimental methods in the following embodiments that do not specify specific conditions are generally performed under conventional conditions in the art or as recommended by the manufacturer; the raw materials and reagents used, unless otherwise specified, are all commercially available from the conventional market. Any non-substantial changes and substitutions made by those skilled in the art based on the present invention are within the scope of protection claimed by the present invention.

[0058] The preparation method of 2-(acrylamido)benzoic acid or 2-(4-pentenamido)benzoic acid of the present invention is referenced in the literature (Changshu Wu, Yang Gao, et al. Ag-Catalyzed Practical Synthesis of N-AcylAnthranilic Acids from Anthranils and Carboxylic Acids. The Journal of Organic Chemistry, 2024, 89, 3150-3160. DOI:doi.org / 10.1021 / acs.joc.3c02586), wherein 2-(acrylamido)benzoic acid has the molecular structure shown in formula (1), and 2-(4-pentenamido)benzoic acid has the molecular structure shown in formula (2).

[0059]

[0060] Equation (1);

[0061] Equation (2); The raw materials for the perovskite precursor solution used in this invention include methylammonium chloride, methylammonium iodide, formamidinium hydroiodate, cesium iodide, and lead iodide. The solvent for the perovskite precursor solution is a mixed solution of DMF and DMSO.

[0062] Example 1 This embodiment provides an inverted perovskite solar cell, which, from bottom to top, includes a conductive glass layer, a hole transport layer, a buried interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer.

[0063] The buried interface modification layer is formed by first spin-coating the perovskite solar cell buried interface modification agent onto the hole transport layer and then removing the solvent.

[0064] The method for preparing the perovskite solar cell includes the following steps: S1: The ITO conductive glass was ultrasonically cleaned for 15 min with detergent, deionized water, acetone and isopropanol alternately, and then dried with argon gas. It was then placed in a UV ozone cleaner for UV ozone treatment. After treatment, 40 μL of 15 mg / mL NiO was spin-coated onto the conductive glass surface in air. X The solution was spin-coated at 4000 rpm for 30 s. After spin-coating, the solution was transferred to a heating stage and heated at 150 °C for 30 min to obtain a hole transport layer. S2: Dissolve 1.00 mg of 2-(acrylamido)benzoic acid in 1 mL of isopropanol and stir magnetically for 1 hour to obtain a perovskite solar cell buried interface modifier. The concentration of 2-(acrylamido)benzoic acid is 1.00 mg / mL. In a glove box under nitrogen atmosphere, spin coat 40 μL of the buried interface modifier onto the hole transport layer at a spin coat speed of 4000 rpm for 30 s. Then transfer it to a heating stage and heat at 100℃ for 10 min to obtain the buried interface modified layer. S3: In a glove box under a nitrogen atmosphere, spin-coat 68 μL of perovskite solution onto the surface of the interface modification layer. Spin-coat at 1000 rpm for 10 s, then at 5000 rpm for 30 s. Add chlorobenzene dropwise in the last 10 s, then transfer to a heating stage and heat at 100℃ for 30 min to obtain the perovskite layer. S4: In a glove box under a nitrogen atmosphere, 23 mg of the electron transport layer material [6,6]-phenyl C61 butyrate methyl ester (PC) was placed. 61 BM was dissolved in 1 mL of chlorobenzene to prepare PC. 61 BM electron transport layer solution, and take 28 μL PC 61 The BM electron transport layer solution was spin-coated onto the surface of the perovskite modified layer at a spin speed of 3000 rpm for 30 s. After spin-coating, the layer was transferred to a heating stage and heated at 65°C for 10 min. Then, 35 μL of 2.5 mg / mL copper bath solution (BCP) was spin-coated at a spin speed of 5000 rpm for 30 s to obtain the electron transport layer. S5: Place the electron transport layer into a vacuum coating machine, evacuate the vacuum, place the silver metal source into a tungsten boat, evaporate the silver metal electrode, and assemble to obtain a perovskite solar cell.

[0065] Example 2 This embodiment provides a trans-perovskite solar cell, which differs from Embodiment 1 in that, in S2, 2-(acrylamido)benzoic acid is replaced with 2-(4-pentenamido)benzoic acid, and the concentration of 2-(4-pentenamido)benzoic acid is 1.00 mg / mL. The rest is the same as in Embodiment 1.

[0066] Example 3 This embodiment provides an inverted perovskite solar cell. The difference from Example 1 is that in step S2, 0.20 mg of 2-(acrylamido)benzoic acid and 0.40 mg of Me-2PACz are dissolved in 1 mL of isopropanol and magnetically stirred for 1 hour to obtain the perovskite solar cell buried interface modifier. The concentration of 2-(acrylamido)benzoic acid is 0.20 mg / mL, and the concentration of Me-2PACz is 0.40 mg / mL. The rest is the same as in Example 1.

[0067] Example 4 This embodiment provides a reverse perovskite solar cell, which differs from Embodiment 3 in that, in S2, 2-(acrylamido)benzoic acid is replaced with 2-(4-pentenamido)benzoic acid, the concentration of 2-(4-pentenamido)benzoic acid is 0.20 mg / mL, and the concentration of Me-2PACz is 0.40 mg / mL. The rest is the same as in Embodiment 1.

[0068] Comparative Example 1 This comparative example provides a perovskite solar cell, which differs from Example 1 in that the interface modification layer does not contain 2-(acrylamido)benzoic acid, but is otherwise the same as Example 1.

[0069] Comparative Example 2 This comparative example provides a perovskite solar cell, which differs from Example 3 in that the buried interface modification layer does not contain 2-(acrylamido)benzoic acid, but is otherwise the same as Example 3.

[0070] Performance testing NiO from Examples 3, 4 and 2 X The thin film was subjected to AFM testing, and the test results are as follows: Figure 1 As shown. The test structures for Examples 3 and 4 are ITO / NiO, respectively. X / 2-(acrylamido)benzoic acid + Me-2PACz and ITO / NiO X / 2-(4-pentenamido)benzoic acid + Me-2PACz, the structure tested in Comparative Example 2 is ITO / NiO X / Me-2PACz.

[0071] Transient photoluminescence analysis was performed on the perovskite layers of the perovskite solar cells of Examples 3, 4, and Comparative Example 2. The test results are as follows: Figure 2 As shown. The test structures for Examples 3 and 4 are ITO / NiO, respectively. X / 2-(acrylamido)benzoic acid + Me-2PACz / perovskite layer and ITO / NiO X / 2-(4-pentenamido)benzoic acid + Me-2PACz / perovskite layer, the structure tested in Comparative Example 2 is ITO / NiO X / Me-2PACz / perovskite layer.

[0072] The current density versus voltage (JV) characteristic curves, i.e., short-circuit current versus open-circuit voltage curves, of the perovskite solar cells in the examples and comparative examples were measured. The test results are as follows: Figure 3 As shown in Table 1.

[0073] The test results are shown below: Figure 3 The JV curves for the perovskite solar cells in the examples and comparative examples are shown in Table 1.

[0074] Table 1 Test results of current density and voltage characteristic curves

[0075] As shown in Table 1, this invention uses 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid as buried interface modifiers. These molecules use benzoic acid as an anchoring group and modify the hole transport layer NiO through the synergistic effect between carboxyl groups, amide groups, and carbon-carbon double bonds. X / Perovskite interface, improving NiO X The flatness of the thin film forms a dense and compact modification layer, which in turn regulates the morphology of the perovskite layer, thereby improving the photoelectric conversion efficiency of the perovskite solar cell.

[0076] As shown in Examples 1 and 2 and Comparative Example 1, using 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid as buried interface modifiers can increase the photoelectric conversion efficiency of perovskite solar cells from 18.33% to 21.45% and 21.10%, respectively. This is because the buried interface modification layer successfully improves the NiO... X The perovskite layer interface reduces nonradiative recombination at the interface, thereby improving device performance.

[0077] The steric hindrance of the carbazole core in Me-2PACz restricts the formation of a dense modification layer on the bottom interface of the perovskite. Therefore, Me-2PACz is used to modify NiO-based materials by doping with 2-(acrylamido)benzoic acid and 2-(4-pentenamido)benzoic acid, respectively. X The buried interface of perovskite solar cells, and the two work together to passivate NiO. X / Defects in the perovskite layer. As shown in Examples 3 and 4 and Comparative Example 2, compared with devices modified with Me-2PACz alone, devices doped with 2-(acrylamido)benzoic acid or 2-(4-pentenamido)benzoic acid showed that the PCE increased from 21.64% to 23.17% and 23.17%, respectively, and the fill factor also increased from 78.10% to 81.47% and 83.45%, respectively. This indicates that using Me-2PACz doped with 2-(benzoylamino)benzoic acid as an interface modification layer can form a dense and compact modification layer, which can reduce the direct contact between the perovskite and the highly active nickel oxide in the hole transport layer, reduce adverse reactions between the perovskite and the highly active trivalent and tetravalent nickel in the hole transport layer, form better interface contact, and lead to less interface recombination, thereby effectively improving the fill factor and further improving the photoelectric conversion efficiency of perovskite solar cells.

[0078] Figure 1 NiO as described in Examples 3, 4 and Comparative Example 2 X AFM testing of thin films, only Me-2PACz modified NiO X The Ra (average roughness) of the thin film is 4.35 nm, while the NiO modified with 2-(acrylamido)benzoic acid or 2-(4-pentenamido)benzoic acid... X The average roughness decreased to 4.11 nm and 3.99 nm, respectively. This is due to the fact that NiO X Thin films (especially those prepared by solution methods) often exhibit nanoscale depressions and pores on their surfaces. Co-self-assembled molecules can adsorb onto these defects, and the flexible alkyl chain of 2-(4-pentenamido)benzoic acid can effectively fill smaller depressions and pores, covering smaller surface protrusions and particles, thus enabling NiO to... X The film is more uniform and smooth, providing a more ideal substrate for subsequent perovskite deposition, promoting uniform nucleation and growth of perovskite, and forming perovskite films with larger grains and fewer grain boundaries, which is crucial for improving device efficiency.

[0079] Figure 2 The steady-state photoluminescence (PL) spectra of the perovskite layers in Examples 3, 4, and Comparative Example 2 are shown. Figure 2 It can be seen that the perovskite fluorescence spectral intensity of Examples 3 and 4 is enhanced, indicating that the hole transport layer NiO is modified by adding 2-(acrylamido)benzoic acid or 2-(4-pentenamido)benzoic acid to the modifier. X The perovskite layer interface is anchored to the nickel oxide substrate by carboxyl groups. Through the synergistic effect between carboxyl groups, amide groups, and carbon-carbon double bonds, NiO... XSurface defects are effectively passivated, forming a dense and compact modification layer, thereby forming a high-quality perovskite film. The lower bulk phase and grain boundary defect density can significantly reduce non-radiative recombination.

[0080] The above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. Application of 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid as a substrate interface modifier for trans-perovskite solar cells.

2. A method for improving the photoelectric performance of inverted perovskite solar cells, characterized in that, A solution containing a small molecule compound is spin-coated between the hole transport layer and the perovskite layer; the small molecule compound is 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid.

3. The method according to claim 2, characterized in that, The concentration of small molecule compounds in the solution is 0.8~1.2 mg / mL.

4. The method according to claim 2, characterized in that, The solution containing the small molecule compound also includes Me-2PACz.

5. The method according to claim 4, characterized in that, The concentration of the small molecule compound in the solution is 0.1~0.3 mg / mL.

6. A reverse perovskite solar cell, comprising, from bottom to top, a conductive glass layer, a hole transport layer, a buried interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer, characterized in that, The buried interface modification layer includes 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid.

7. The inverted perovskite solar cell according to claim 6, characterized in that, The embedded interface modification layer also includes Me-2PACz.

8. The method for fabricating the inverted perovskite solar cell according to claim 6 or 7, wherein a hole transport layer, a buried interface modification layer, a perovskite layer, an electron transport layer, and a metal electrode layer are sequentially fabricated on a conductive glass layer using a spin-coating method; characterized in that, The method for preparing the buried interface modification layer includes: spin-coating a solution containing a small molecule compound onto a hole transport layer, heating, and obtaining the buried interface modification layer; the small molecule compound is 2-(acrylamido)benzoic acid and / or 2-(4-pentenamido)benzoic acid.

9. The preparation method according to claim 8, characterized in that, The amount of solution containing the small molecule compound added is 40~60 μL.

10. The application of the inverted perovskite solar cell according to claim 6 or 7 in the preparation of photovoltaic power generation equipment.

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