Threshold determination and identification method suitable for power semiconductor bonding wire fracture identification

By using a threshold method determined by statistics and normal distribution, combined with the ratio of transient current to voltage during conduction, the problem of accurately identifying bond wire breakage in power semiconductor devices under operating conditions is solved, achieving high-precision real-time identification and cost reduction.

CN120908625APending Publication Date: 2025-11-07NANJING UNIV OF INFORMATION SCI & TECH
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Patent Information

Application Number
CN202510950312.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-07-10
Publication Date
2025-11-07

AI Technical Summary

Technical Problem

Existing technologies struggle to accurately identify bond wire breakage during the operation of power semiconductor devices, and the accuracy of identification criteria is relatively low.

Method used

By statistically analyzing the total resistance change of the bonding wires and power source leads, the threshold of the rate of change of the aging value relative to the reference value is determined. The threshold is set using a normal distribution function. Combined with the drain-source current and voltage ratio of the transient power semiconductor, bonding wire breakage can be identified in real time.

Benefits of technology

It improves the accuracy and reliability of bond wire identification, enabling real-time identification of bond wire breakage during the actual operation of power semiconductor devices, reducing costs and improving work efficiency.

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Abstract

The invention discloses a threshold determination and identification method suitable for power semiconductor bonding wire fracture identification. The method comprises the following steps: counting an average value of total resistance of a bonding wire and a power source lead terminal of a brand new power semiconductor; aiming at the conditions that any one bonding wire is broken, any two bonding wires are broken and any three bonding wires are broken, counting the average value and the standard deviation of the total resistance change values of the bonding wires under the three conditions; determining a probability density function of a change rate threshold value of three aging values relative to a reference value based on an average value of total resistance of a bonding wire and a power source lead terminal of the brand new power semiconductor and an average value and a standard deviation of total resistance change values of the bonding wire under three conditions; and three change rate thresholds are determined through a probability density function. According to the invention, the accuracy of the identification criterion can be effectively improved, and the online identification of the fracture condition of the bonding wire can be realized.
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